CN117203865A - Light source device - Google Patents

Abstract

A light source device (100) is provided with: a substrate (10) having a support surface (10A); a first base (20) having a first upper surface (20A) and a first mounting surface (20B) that faces the support surface (10A); one or more laser diodes (30) which are located between the substrate (10) and the first base (20) and which have a p-side electrode surface (30B) and an n-side electrode surface (30A); a side wall section (15) provided on the substrate (10) and having a second upper surface (15A) and an inner wall surface (15C), wherein the space (V) for accommodating the laser diode (30) is defined by the inner wall surface (15C); a heat radiation member (60) provided on the first base (20); and a metal member (50) which is joined to the heat radiating member (60) and the second upper surface (15A) and seals the space (V). The height from the support surface (10A) to the first upper surface (20A) is different from the height from the support surface (10A) to the second upper surface (15A). One of the p-side electrode surface (30B) or the n-side electrode surface (30A) is directly or indirectly joined to the support surface (10A), and the other of the p-side electrode surface (30B) or the n-side electrode surface (30A) is joined to the first mounting surface (20B).

Description

Light source device

Technical field

The present invention relates to a light source device.

Background technique

A light-emitting device is being developed that has a sealing structure that seals a space within a package housing a laser diode. Patent Document 1 discloses a light-emitting device including an upper substrate, a lower substrate facing the upper substrate, a base that supports a laser diode, and a wavelength converter. In this light-emitting device, the laser diode is arranged between the lower substrate and the upper substrate that are bonded to the base. The wavelength converter forms a space for sealing the laser diode.

existing technical documents

patent documents

Patent document 1: (Japan) Japanese Patent Application Publication No. 2016-167492

Contents of the invention

The technical problem to be solved by the invention

Embodiments of the present invention provide a new sealing structure for hermetically sealing a space within a package housing a laser diode.

Technical solutions for solving technical problems

In a non-limiting exemplary embodiment, the light source device of the present invention includes: a substrate having a supporting surface; a first base having a first mounting surface facing the supporting surface and a first mounting surface located on the first A first upper surface on the opposite side of the mounting surface; one or more laser diodes located between the substrate and the first base and having a p-side electrode surface and an n-type laser diode located on the opposite side of the p-side electrode surface A side electrode surface; a side wall portion, which is provided on the substrate and has a second upper surface and an inner wall surface, and the space for housing the laser diode is defined by the inner wall surface; a heat dissipation component, which is provided on the third On a base; a metal component is coupled with the heat dissipation component and the second upper surface to seal the space. The height from the support surface to the first upper surface is different from the height from the support surface to the second upper surface. One of the p-side electrode surface or the n-side electrode surface is directly or indirectly connected to the supporting surface, and the other of the p-side electrode surface or the n-side electrode surface is connected to the first A mounting surface is joined.

beneficial effect

According to an exemplary embodiment of the present invention, a new sealing structure for hermetically sealing a space within a package housing a laser diode is provided.

Description of the drawings

FIG. 1 is a cross-sectional view parallel to the YZ plane of the light source device according to the first embodiment of the present invention.

2 is a cross-sectional view parallel to the XY plane of the light source device according to the first embodiment of the present invention.

3 is a plan view of the light source device according to the first embodiment of the present invention when viewed from a normal direction of the support surface of the substrate.

4 is a cross-sectional view parallel to the YZ plane of the light source device provided with external connection electrodes on the supporting surface of the substrate according to the first embodiment of the present invention.

5 is a cross-sectional view parallel to the YZ plane of another structural example of the light source device according to the first embodiment of the present invention.

6 is a cross-sectional view parallel to the YZ plane of still another structural example of the light source device according to the first embodiment of the present invention.

7 is a cross-sectional view parallel to the YZ plane of the light source device equipped with an additional heat dissipation member according to the first embodiment of the present invention.

8 is a cross-sectional view parallel to the XY plane of the light source device including a plurality of laser diodes according to the first embodiment of the present invention.

9 is a cross-sectional view parallel to the YZ plane of a modified example of the light source device according to the first embodiment of the present invention.

10 is a cross-sectional view parallel to the XY plane of a modified example of the light source device according to the first embodiment of the present invention.

11 is a plan view of a modified example of the light source device according to the first embodiment of the present invention when viewed from the normal direction of the support surface of the substrate.

12 is a cross-sectional view parallel to the YZ plane of another modified example of the light source device according to the first embodiment of the present invention.

13 is a cross-sectional view parallel to the YZ plane of yet another modification of the light source device according to the first embodiment of the present invention.

14 is a cross-sectional view parallel to the YZ plane of yet another modification of the light source device according to the first embodiment of the present invention.

FIG. 15 is a plan view of the pressing member as seen from the normal direction of the support surface of the substrate.

16 is a cross-sectional view parallel to the YZ plane of yet another modification of the light source device according to the first embodiment of the present invention.

FIG. 17 is a plan view of the metal component as seen from the normal direction of the support surface of the substrate.

18 is a cross-sectional view parallel to the YZ plane of yet another modification of the light source device according to the first embodiment of the present invention.

FIG. 19 is a plan view of another example of the metal component as seen from the normal direction of the support surface of the substrate.

20 is a cross-sectional view parallel to the XY plane of the light source device according to the second embodiment of the present invention.

21 is a plan view of the second base in a state of supporting two laser diodes, two conductive members, and a support member when viewed from a normal direction of the support surface of the substrate.

Detailed ways

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are examples, and the light source device of the present invention is not limited to the following embodiments. For example, numerical values, shapes, materials, steps, the order of the steps, and the like shown in the following embodiments are merely examples, and various modifications can be made as long as there is no technical inconsistency. In addition, the various solutions described below are merely examples, and various combinations can be made as long as there is no technical inconsistency.

The sizes, shapes, etc. of the components shown in the drawings may be exaggerated for ease of understanding, and may not reflect the size, shape, and size relationship between the actual light source devices and the components. In addition, in order to prevent the drawings from becoming overly complicated, illustration of some elements may be omitted.

In the following description, components having substantially the same functions are denoted by common reference numerals, and descriptions may be omitted. There are cases where terms indicating a specific direction or position (for example, "up," "down," "left," "right" and other terms including these terms) are used. However, these terms are used only for easy understanding of relative directions or positions in the referenced drawings. As long as the relative directions or positional relationships of terms such as "upper" and "lower" in the referenced drawings are the same, they may not be the same in drawings other than those of the present invention, actual products, manufacturing equipment, etc. Refer to the drawings for the same configuration.

In this specification or the claims, polygons such as triangles and quadrilaterals are not limited to polygons in the strict mathematical sense, but also include shapes in which the corners of the polygons are rounded, chamfered, chamfered, rounded, etc. Furthermore, not only the corner portions (ends of the sides) of the polygon, but also shapes in which the middle portions of the sides are processed are also called polygons. That is, a shape in which a polygon remains as a base and has been partially processed is included in "polygon".

In this specification or the claims, there are multiple elements specified by a certain name. When each element is expressed separately, ordinal numbers such as "first" and "second" are sometimes added in front of each element. These ordinal numbers are merely labels used to distinguish attached objects. Their number, sequence, sequence, etc. have no special meaning. For example, when the term "first base" is used and the term "second base" is not used in claim 1, the invention of claim 1 only needs to include one base. The light-emitting element is not limited to the "first base" in the specification, and may be a "second base".

(first embodiment)

A structural example of the light source device 100 according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 3 . In the drawing, the X-axis, Y-axis and Z-axis which are orthogonal to each other are shown.

FIG. 1 is a cross-sectional view of the light source device 100 parallel to the YZ plane. The cross-section shown in FIG. 1 includes the cross-sections of the laser diode 30 and the conductive member 40 . The laser light L emitted in the Z direction from the emission end surface 30E of the laser diode 30 is represented by a dotted line. FIG. 2 is a cross-sectional view of the light source device 100 parallel to the XY plane. The cross section shown in FIG. 2 includes the emission end surface 30E of the laser diode 30. FIG. 3 is a plan view of the light source device 100 when viewed from the normal direction of the support surface 10A of the substrate 10 .

The light source device 100 of this embodiment includes a substrate 10 , a first base 20 , a second base 25 , one or more laser diodes 30 , a conductive member 40 , a metal member 50 , and a heat dissipation member 60 . In the example shown in FIGS. 1 and 2 , the light source device 100 includes one laser diode 30 . However, as will be described later, the light source device 100 may include a plurality of laser diodes 30 . Depending on product specifications or demand specifications, the light source device 100 may be equipped with a protection element represented by a Zener diode and/or a temperature sensor such as a thermistor for measuring the internal temperature. In addition, the light source device 100 may include a light-receiving element such as a photodiode for monitoring the intensity of the laser light L emitted from the laser diode 30 .

As shown in FIG. 3 , the shape of the light source device 100 is a quadrilateral when viewed from above in the normal direction of the support surface 10A of the substrate 10 , that is, in the Y direction. However, the shape of the light source device is not limited to this. In FIGS. 1 to 3 , the normal direction of the support surface 10A coincides with the Y direction. In the following description, "planar view" means a planar view viewed from the normal direction of the support surface 10A, that is, the Y direction. For example, the size of the light source device 100 in the X direction is approximately 1.0 mm to 30.0 mm, and the size in the Z direction is approximately 1.0 mm to 5.0 mm. The thickness of the thickest part of the light source device 100 in the Y direction may be about 1.0 mm to 3.0 mm.

The substrate 10 of this embodiment is a plate-shaped member. The substrate 10 has a support surface 10A that directly or indirectly supports the laser diode 30 and a lower surface 10B located on the opposite side to the support surface 10A. A metal film such as gold for bonding to other components such as the side wall portion 15 and the second base 25 may be formed on the support surface 10A of the substrate 10 . The substrate 10 can be formed using ceramics, metal, silicon, resin, etc. as a main material. For example, when ceramics are used, aluminum nitride, silicon nitride, aluminum oxide, silicon, silicon carbide, etc. can be used as the main material of the substrate. When metal is used, copper, aluminum, iron, composite copper-molybdenum alloy, copper-diamond composite material, copper-tungsten alloy, etc. can be used as the main material of the substrate. However, when metal is used, in order to provide the conductor wiring layer on the substrate, it is necessary to perform insulation treatment on the support surface 10A and the lower surface 10B. Furthermore, the area directly below the laser diode 30 may be formed of metal, and the other locations may be formed of ceramic.

The substrate 10 has a conductor wiring layer and external connection electrodes electrically connected to the laser diode 30 . The conductor wiring layer and the external connection electrode may be made of metal materials such as tungsten, molybdenum, nickel, gold, silver, platinum, titanium, copper, aluminum, and ruthenium. Conductor wiring layers are provided on the supporting surface 10A of the substrate 10 and inside the substrate 10 , and the external connection electrodes 11 and 12 can be provided on the lower surface 10B of the substrate 10 . The conductor wiring layer provided on the support surface 10A and the external connection electrodes 11 and 12 provided on the lower surface 10B are electrically connected via the conductor wiring layer and via holes provided inside the substrate 10 .

The external connection electrode 11 is electrically connected to one of the p-side electrode surface or the n-side electrode surface of the laser diode 30 . The external connection electrode 12 is electrically connected to the other one of the p-side electrode surface or the n-side electrode surface of the laser diode 30 . For example, an external power supply or an external drive circuit for driving the laser diode 30 may be electrically connected to the laser diode 30 via the external connection electrode 11 and the external connection electrode 12 . The external connection electrodes 11 and 12 do not need to be provided on the lower surface 10B as shown in FIG. 1 , but may be provided on the support surface 10A, for example.

FIG. 4 is a cross-sectional view parallel to the YZ plane of the light source device 101 in which the external connection electrodes 11 and 12 are provided on the support surface 10A. The external connection electrode 11 and/or the external connection electrode 12 can be provided on the support surface 10A. As illustrated in FIG. 4 , the size of the substrate 10 in plan view may be larger than the size of the side wall portion 15 , and the external connection electrodes 11 and 12 may be provided outside the side wall portion 15 of the support surface 10A. Area.

The side wall portion 15 is provided to surround the laser diode 30 and is joined to the support surface 10A. The side wall portion 15 has a second upper surface 15A, a lower surface 15B, and an inner wall surface 15C. The inner wall surface 15C surrounds the laser diode 30 and defines the space V in which the laser diode 30 is accommodated. The lower surface 15B of the side wall portion 15 is joined to the support surface 10A of the substrate 10 . Joining may be achieved via joints formed from inorganic or organic materials. The joint part is formed by sintering, soldering, soft soldering, ultrasonic wave, resistance welding, laser welding, etc., for example. Examples of materials for the joint include metals such as gold-tin alloy and solder alloy; metal pastes such as gold paste and silver paste; and metal foils. However, in the case of using a laser diode that emits blue or green light, if the influence of dust collection caused by the laser is considered, the use of organic materials is preferably avoided.

The side wall portion 15 is disposed at a position crossing the laser light L emitted from the laser diode 30 on the support surface 10A, and allows the laser light L to transmit therethrough. At least the portion of the side wall portion 15 that transmits the laser light L can be formed of a material such as alkali glass, alkali-free glass, sapphire, phosphor-containing glass, or a transparent ceramic material. "Alkali glass" is a silicate compound glass containing movable ions of alkali metal elements such as Na ⁺ , Ka ⁺ , and Li ⁺ . Silicic acid compound glass having an alkali oxide concentration of 0.1% by mass or less is called "alkali-free glass". In addition, examples of silicate compound glass include silicate glass, borosilicate glass, and quartz glass. The portion of the side wall portion 15 that does not transmit the laser light L can be formed of, for example, silicon, glass, ceramics, or the same material as the above-mentioned substrate 10 .

In this embodiment, the base plate 10 and the side wall portion 15 are different components. The components of the substrate 10 and the side wall portion 15 may be collectively referred to as “package”. For packaging, the substrate 10 and the side wall portion 15 may be integrally formed.

The laser diode 30 has a p-side electrode, an n-side electrode, and a semiconductor stacked structure including a p-side semiconductor layer, an n-side semiconductor layer, and an active layer located between these layers. By applying a voltage to the p-side electrode and the n-side electrode, current flows inside, and the laser light L is emitted from the emission end surface 30E of the laser diode 30 . The laser diode 30 of this embodiment is an end surface emission type having an emission end surface 30E from which the laser light L is emitted. The laser diode 30 may have a plurality of light emitting points.

In this embodiment, the surface of the n-side electrode is called "n-side electrode surface 30A" and the surface of the p-side electrode is called "p-side electrode surface 30B." The laser diode 30 has a p-side electrode surface 30B and an n-side electrode surface 30A located on the opposite side of the p-side electrode surface 30B.

The laser diode 30 may be, for example, a laser diode that emits blue light, a laser diode that emits green light, a laser diode that emits red light, or the like. Furthermore, a laser diode that emits light other than visible light, for example, near-infrared rays or ultraviolet rays, may be used.

In this specification, blue light refers to light whose emission peak wavelength is in the range of 420 nm to 494 nm. Green light is light with a peak emission wavelength in the range of 495nm to 570nm. Red light is light with a peak emission wavelength in the range of 605nm to 750nm.

Examples of a laser diode that emits blue light or a laser diode that emits green light include a laser diode including a nitride semiconductor. As the nitride semiconductor, for example, GaN, InGaN, and AlGaN can be used. Examples of laser diodes that emit red light include laser diodes containing InAlGaP-based, GaInP-based, GaAs-based, or AlGaAs-based semiconductors.

The laser light emitted from the laser diode has expansion in the fast axis and slow axis directions, and forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a surface parallel to the emission end surface of the laser light. The laser light diverges more in the fast axis direction than in the slow axis direction. FFP is defined by the light intensity distribution of the laser beam at a position far from the exit end surface. In this light intensity distribution, a portion having an intensity of 1/e ² or more with respect to the peak intensity value can be called a beam profile. In the example shown in FIG. 1 , the optical axis of the laser light L emitted from the laser diode 30 is parallel to the Z direction. The fast axis direction and the slow axis direction are parallel to the Y direction and the X direction respectively. Here, parallelism can be included within ±5 degrees. However, the optical axis of the laser light L does not need to be parallel to the Z direction.

As illustrated in FIG. 1 , after the laser light L is emitted from the emission end surface 30E of the laser diode 30 , it diverges and expands in the fast axis direction, that is, the Y direction. Therefore, the laser light L is preferably collimated or converged by an optical system including a lens. Such an optical system may be provided inside or outside the light source device 100 .

The first base 20 and the second base 25 are heat dissipation components respectively, and are typically rectangular parallelepipeds. However, the shape of each base is not limited to this. Each base functions to release heat generated from the laser diode 30 . From the viewpoint of further improving heat dissipation, each base is preferably formed of a material with a higher thermal conductivity than that of the laser diode 30 . Examples of the materials include: ceramic materials such as aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide; metal materials such as copper, aluminum, silver, iron, nickel, molybdenum, tungsten, and copper-molybdenum alloys; and diamonds.

As shown in FIG. 2 , the first base 20 has a first mounting surface 20B facing the support surface 10A of the substrate 10 and a first upper surface 20A located on the opposite side of the first mounting surface 20B. The first base 20 has a first wiring layer 21 electrically connected to the laser diode 30 on the first mounting surface 20B. In the example shown in FIGS. 1 and 2 , the n-side electrode surface 30A of the laser diode 30 is bonded to the first wiring layer 21 . Thereby, the laser diode 30 is in thermal contact with the first base 20 and is electrically connected. Here, the term “thermal contact” means not only indirect contact between the electrode surface and the base via a solid conductive member, but also direct contact between the electrode surface and the base.

The n-side electrode surface 30A of the laser diode 30 and the first wiring layer 21 may be joined via a joining member. The joining member is, for example, a metal block containing metals such as gold, silver, copper, aluminum, gold-tin alloy, and solder; and a metal paste containing conductive metals such as gold or gold-tin alloy. Using the above-described joining member, the n-side electrode surface 30A is joined to the first wiring layer 21 . The "joint part" described below can be formed of the above-mentioned joint member unless otherwise specified.

As shown in FIG. 2 , the second base 25 has a lower surface 25B joined to the support surface 10A and a second mounting surface 25A located on the opposite side of the lower surface 25B. The second mounting surface 25A is opposite to the first mounting surface 20B of the first base 20 . The second base 25 has a second wiring layer 26 electrically connected to the laser diode 30 on the second mounting surface 25A. The lower surface 25B can be joined to the support surface 10A of the substrate 10 via a joint portion.

The laser diode 30 is arranged on the second mounting surface 25A of the second base 25 . A through hole may be provided in the second base 25 . In the example shown in FIGS. 1 and 2 , the laser diode 30 is bonded to the support surface 10A via the second base 25 . To explain in more detail, the p-side electrode surface 30B of the laser diode 30 can be bonded to the second wiring layer 26 via the bonding portion. The p-side electrode surface 30B is electrically connected to the conductor wiring layer of the substrate 10 via a through hole that electrically connects the second wiring layer 26 and the conductor wiring layer provided on the lower surface 25B of the second base 25 .

The first base 20 and the second base 25 are arranged to sandwich the laser diode 30 . By sandwiching the laser diode 30 between the pair of bases, the heat generated from the laser diode 30 can be efficiently released to the first base 20 and the second base 25 respectively. It is considered that this heat dissipation effect can be further improved by setting the thickness of the laser diode 30 to about several μm.

In the example of the light source device 100 shown in FIGS. 1 and 2 , the size of the first base 20 is equal to the size of the second base 25 . However, the size of the first base 20 may also be different from the size of the second base 25 . For example, when viewed from above, the first base 20 may include the second base 25 , and conversely, the second base 25 may include the first base 20 . In the Y direction, the first base 20 may be thicker or thinner than the second base 25 .

As described above, the n-side electrode surface 30A of the laser diode 30 is bonded to the first wiring layer 21 of the first base 20 . The p-side electrode surface 30B is bonded to the second wiring layer 26 included in the second base 25 . However, the n-side electrode surface 30A and the p-side electrode surface 30B may be inverted so that the n-side electrode surface 30A is bonded to the second wiring layer 26 and the p-side electrode surface 30B is bonded to the first wiring layer 21 Engagement.

One of the p-side electrode surface 30B or the n-side electrode surface 30A of the laser diode 30 may be bonded to the support surface 10A of the substrate 10, and the other one of the p-side electrode surface 30B or the n-side electrode surface 30A may be bonded to the first substrate. The first mounting surface 20B of the seat 20 is engaged. Here, the fact that one of the p-side electrode surface 30B or the n-side electrode surface 30A is joined to the support surface 10A means that one of them is directly or indirectly joined to the support surface 10A. In this embodiment, the p-side electrode surface 30B is indirectly joined to the support surface 10A of the substrate 10 via the second base 25 , and the n-side electrode surface 30A is joined to the first mounting surface 20B of the first base 20 . It should be noted that in the absence of the second base 25 , the p-side electrode surface 30B may be directly joined to the support surface 10A of the substrate 10 . Through such bonding, the external connection electrode 11 is electrically connected to the p-side electrode surface 30B, and the external connection electrode 12 is electrically connected to the n-side electrode surface 30A via the conductive member 40 .

The laser diode 30 is indirectly mounted on the support surface 10A of the substrate 10 in a state of being joined to the second base 25 . The laser diode 30 is located between the substrate 10 and the first base 20 . However, the laser diode 30 may be directly coupled to the support surface 10A without via the second base 25 . Therefore, in this embodiment, the second base 25 is not necessarily an essential component. However, by using the second base 25, heat dissipation can be improved. Furthermore, there is an advantage that adjusting the thickness of the second base 25 makes it easier to adjust the position of the light emitting point of the laser diode 30 in the height direction, that is, in the Y direction.

The conductive member 40 is made of metal such as gold, silver, copper, or aluminum, for example. The conductive member 40 may be formed to have the same thickness as the laser diode 30 . The conductive member 40 has an upper surface facing the first mounting surface 20B of the first base 20 and a lower surface located on the opposite side of the upper surface and joined to the second mounting surface 25A. The conductive member 40 is, for example, a rectangular parallelepiped member, but is not limited to a rectangular parallelepiped shape as long as it has a lower surface joined to the second mounting surface 25A.

The conductive member 40 is bonded to the first base 20 and the second base 25 and electrically connects the first wiring layer 21 and the second wiring layer 26 . Specifically, the lower surface of the conductive member 40 is bonded to the second wiring layer 26 provided on the second mounting surface 25A. The upper surface of the conductive member 40 is bonded to the first wiring layer 21 provided on the first mounting surface 20B. The conductive member 40 may be bonded to the second wiring layer 26 and the first wiring layer 21 via the bonding portion. Thereby, the n-side electrode surface 30A of the laser diode 30 is electrically connected to the first wiring layer 21 and the second wiring layer 26 . As a result, the n-side electrode surface 30A can be electrically connected to the external connection electrode 12 provided on the lower surface 10B of the substrate 10 . According to this wiring example, there is no need for conventional wire bonding in which a conductor such as gold is drawn from the n-side electrode surface 30A to the second wiring layer 26, so the wiring work becomes easy and the manufacturing process can be simplified. However, the conductive member 40 may not be used, and the n-side electrode surface 30A and the second wiring layer 26 may be electrically connected by wire bonding.

By making the height of the conductive member 40 in the Y direction coincide with the height of the laser diode 30, the first mounting surface 20B and the second mounting surface 25A can be held in parallel, and the laser diode 30 and the conductive member 40 can be aligned with the first base surface. The work of joining the base 20 and the second base 25 becomes easy. Here, parallelism includes an error within ±5 degrees.

In this embodiment, the metal member 50 functions as a cover of the package that hermetically seals the space V in which the laser diode 30 is accommodated. An example of the metal component 50 is metal foil. The thickness of the metal foil in this embodiment is approximately 10 μm to 300 μm. As the base material of the metal foil, for example, a material selected from the group consisting of aluminum, copper, gold, Kovar, titanium, stainless steel, tungsten, beryllium copper alloy, titanium, nickel, silver, platinum, nickel-chromium alloy, stainless steel, tantalum, molybdenum, and niobium is used. At least one member of the group consisting of or an alloy thereof.

For example, the base material is preferably covered with a metal film formed of at least one material selected from the group consisting of gold, platinum, titanium, nickel, chromium, palladium, and ruthenium. The metal film can be formed on the surface of the base material by a film forming process such as sputtering or electroplating.

The heat dissipation member 60 shown in FIGS. 1 and 2 is a rectangular parallelepiped like the first base 20 or the second base 25, but is not limited thereto. The heat dissipation member 60 may be formed of the same material as that of the base described above. The heat dissipation component 60 is disposed on the first base 20 . In other words, the heat dissipation component 60 is located above the first base 20 . The heat dissipation member 60 has a lower surface 60B facing the first upper surface 20A of the first base 20 .

The metal member 50 is joined to the first upper surface 20A of the first base 20 , the lower surface 60B of the heat dissipation member 60 , and the second upper surface 15A of the side wall portion 15 . For example, the bonding can be performed using the same material and method as the bonding between the lower surface 15B of the side wall portion 15 and the supporting surface 10A of the substrate 10 .

The structure of the airtight seal using the metal member 50 is not limited to the example shown in FIGS. 1 and 2 . The metal member 50 is bonded to the entire second upper surface 15A, but may be bonded to a part of the second upper surface 15A, for example. As long as airtight sealing can be achieved, various airtight sealing structures can be used. In this specification, airtight sealing means that the space V is sealed to the extent that convection with outside air is cut off. By adopting an airtight seal, the components arranged in the space V will not substantially deteriorate.

In this embodiment, the height from the support surface 10A to the first upper surface 20A of the first base 20 is different from the height from the support surface 10A to the second upper surface 15A of the side wall portion 15 . In the example shown in FIGS. 1 and 2 , the height from the support surface 10A to the first upper surface 20A is higher than the height from the support surface 10A to the second upper surface 15A. The height difference between the first upper surface 20A and the second upper surface 15A may depend on the manufacturing variation in the thickness of each component such as the first base 20 , the second base 25 , and the side wall portion 15 . The height difference in this embodiment is, for example, about 100 μm to 300 μm. The metal member 50 has a deformation portion 51 caused by this step difference. The deformation part 51 may be bent or curved.

The metal member 50 includes a first part 50A joined to the heat dissipation member 60 , a second part 50B joined to the second upper surface 15A, and a connecting part 50C connecting the first part 50A and the second part 50B. The deformation part 51 includes a first deformation part 51A located at the interface between the first part 50A and the connection part 50C, and a second deformation part 51B located at the interface between the second part 50B and the connection part 50C.

As illustrated in FIGS. 1 and 2 , at least a portion of the first portion 50A may be located between the heat dissipation component 60 and the first base 20 .

FIG. 5 is a cross-sectional view of the light source device 102 parallel to the YZ plane. As illustrated in FIG. 5 , the first portion 50A may not be formed between the heat dissipation member 60 and the first base 20 . In this case, the first portion 50A may be formed only in the peripheral area of the lower surface 60B of the heat dissipation member 60 .

The heat dissipation component 60 is in thermal contact with the first base 20 via the first portion 50A of the metal component 50 or without the first portion 50A of the metal component 50 . As a result, the heat transferred from the laser diode 30 to the first base 20 can be efficiently released to the outside through the heat dissipation member 60 .

FIG. 6 is a cross-sectional view parallel to the YZ plane of the light source device 103 in which the external connection electrodes 11 and 12 are provided on the upper surface 60A of the heat dissipation member 60 . The external connection electrode 11 and/or the external connection electrode 12 can be provided on the upper surface 60A. In the example shown in FIG. 6 , the external connection electrode 11 and the external connection electrode 12 are provided on the upper surface 60A. A conductor wiring layer and a via hole may be provided in the first base 20 and the heat dissipation member 60 to electrically connect the external connection electrode 11 and the external connection electrode 12 to the first wiring layer 21 . Alternatively, the external connection electrode 11 may be provided on the lower surface 10B of the substrate 10 , and the external connection electrode 12 may be provided on the upper surface 60A of the heat dissipation member 60 . In this case, the conductive member 40 may be omitted.

It should be noted that in the structural example illustrated in FIG. 1 , the external connection electrode 11 and/or the external connection electrode 12 may not be provided on the lower surface 10B of the substrate 10 but may be provided on the upper surface 60A of the heat dissipation member 60 . In this case, the metal member 50 may be drilled or the like so that the first portion 50A of the metal member 50 located between the first base 20 and the heat dissipation member 60 does not come into contact with the conductor wiring layer and cause a short circuit.

FIG. 7 is a cross-sectional view parallel to the YZ plane of the light source device 104 further equipped with a heat dissipation member 61 . As shown in the figure, the light source device 104 may further include a heat dissipation member 61 . The heat dissipation member 61 may be disposed on the lower surface 10B of the substrate 10 . The heat dissipation member 61 may be formed of the same material as the heat dissipation member 60 or may be formed of a different material. As the heat dissipation member 61 , for example, a plate-shaped member that is thinner than the heat dissipation member 60 may be used, or a metal film layer may be formed by sputtering or the like. By providing the heat dissipation member 61 , the heat transmitted through the second base 25 can be efficiently released to the outside. As a result, further heat dissipation effect can be obtained.

Refer to Figure 3. In FIG. 3 , in order to understand the relative positional relationship between the first base 20 and the heat dissipation component 60 , a dotted line is used to indicate the outline of the first upper surface 20A of the first base 20 inside the package. The first deformation portion 51A and the second deformation portion 51B of the metal member 50 are respectively indicated by broken lines.

As shown in FIG. 3 , when viewed from above, the heat dissipation component 60 includes the first base 20 . In other words, the size of the heat dissipation component 60 in the XZ plane is larger than the size of the first base 20 in the XZ plane. A portion of the heat dissipation member 60 may overlap a portion or all of the second portion 50B. In the example shown in FIG. 3 , the second portion 50B is the outermost region of the metal member 50 . A portion of the second portion 50B partially overlaps the heat dissipation member 60 . In the area of the second portion 50B, there may be an area that does not overlap with the heat dissipation member 60 . The heat dissipation performance of the light source device 100 can be further improved by bringing the heat dissipation member 60 having a size sufficient to overlap a part or all of the second portion 50B in thermal contact with the first base 20 .

The first base 20 has a first side 20S along the outer edge. The heat dissipation member 60 has a second side 60S along the outer edge. When viewed from above, the first side surface 20S is located inside the second side surface 60S. The first deformation portion 51A is located outside the first side surface 20S and inside the second side surface 60S. In this way, the first deformation portion 51A does not contact the side where the first upper surface 20A and the first side surface 20S of the first base 20 are in contact (that is, the corner of the component). In addition, the first deformation portion 51A does not contact the side where the lower surface 60B and the second side surface 60S of the heat dissipation member 60 are in contact (that is, the corner of the member). By adjusting the position of the first deformation portion 51A so that the first deformation portion 51A of the metal component 50 is located in the above-mentioned range, in other words, so that the first deformation portion 51A does not come into angular contact with the component, the first deformation due to the first deformation can be suppressed. The metal component 50 may be damaged due to contact between the portion 51A and the corner of the component.

Thin metals such as foils can exhibit ductility (especially ductility). By using some kind of ductile metal foil for the cover of the package, the height difference between the first upper surface 20A and the second upper surface 15A can be absorbed, and damage to the metal member 50 caused by thermal stress can be suppressed. Furthermore, it is possible to prevent the metal member 50 from peeling off from at least one of the first upper surface 20A of the first base 20 , the second upper surface 15A of the side wall portion 15 , and the lower surface 60B of the heat dissipation member 60 .

Particularly when using laser diodes that emit blue or green light, it is preferred that the space V of the package is hermetically sealed. This is because airtight sealing can suppress the influence of dust collection caused by laser light. In a package that requires hermetic sealing, double-sided bonding of a chip such as a pair of base members may be required in which both sides of a laser diode are bonded. In this case, it is difficult to achieve both hermetic sealing and double-sided chip bonding. Specifically, in order to match the height of the second upper surface 15A with the height of the first upper surface 20A based on the support surface 10A, it is required to hermetically seal the package space V while bonding both surfaces of the laser diode 30 . . However, when performing double-sided bonding of chips, a load is applied to the bonded portion, for example. Due to this load, the joint does not necessarily deform uniformly. As a result, between the first upper surface 20A and the second upper surface 15A, in addition to the height difference caused by the manufacturing variation in the dimensions of each component, a height difference caused by the variation in the height of the joint portion may also occur. Therefore, the amount of height difference that may occur may vary from build to build. This makes it difficult to achieve both hermetic sealing and two-sided bonding of the chip.

According to this embodiment, by using the metal member 50 having the deformation portion 51 as a cover for sealing the package, the height difference between the first upper surface 20A and the second upper surface 15A can be absorbed. Therefore, there is no need to perform dense height adjustment of each component, and the double-sided bonding of the laser diode 30 becomes easy. In this way, a sealing structure capable of achieving both airtight sealing and double-sided bonding of the chip is provided.

FIG. 8 is a cross-sectional view parallel to the XY plane of the light source device 105 including a plurality of laser diodes 30 . In the example shown in FIG. 8 , the light source device 105 includes two laser diodes 30 . The two laser diodes 30 each have a p-side electrode surface 30B and an n-side electrode surface 30A. The p-side electrode surface 30B of each laser diode 30 is bonded to the support surface 10A via the second base 25 , and the n-side electrode surface 30A is bonded to the first mounting surface 20B of the first base 20 .

The number of laser diodes 30 provided in the light source device 105 is not limited to two, and may be three or more. The plurality of laser diodes 30 can emit light of mutually different colors. For example, a light source device that emits white light is realized by mounting three laser diodes that respectively emit RGB light to the light source device. Alternatively, the plurality of laser diodes 30 may respectively emit light of the same color. In this case, a light source device capable of emitting high-output laser light can be realized.

FIG. 9 is a cross-sectional view of the light source device 106 parallel to the YZ plane. The cross section shown in FIG. 9 includes the cross sections of the laser diode 30 and the conductive member 40 . The laser light L emitted in the Z direction from the emission end surface 30E of the laser diode 30 is indicated by a dotted line. FIG. 10 is a cross-sectional view of the light source device 106 parallel to the XY plane. The cross section shown in FIG. 10 includes the emission end surface 30E of the laser diode 30. FIG. 11 is a top view of the light source device 106 when viewed from above.

In the light source device 106 according to the embodiment of the present invention, the height from the support surface 10A to the first upper surface 20A is lower than the height from the support surface 10A to the second upper surface 15A. Hereinafter, the differences between the light source device 100 and the light source device 106 will be described.

In FIG. 11 , in order to understand the relative positional relationship between the first base 20 and the heat dissipation component 60 , the outline of the first upper surface 20A of the first base 20 located inside the package is indicated by a dotted line. The first deformation portion 51A and the second deformation portion 51B of the metal member 50 are respectively indicated by broken lines.

As shown in FIG. 11 , when viewed from above, the first base 20 includes a heat dissipation member 60 . In other words, the size of the first base 20 in the XZ plane is larger than the size of the heat dissipation component 60 in the XZ plane.

When viewed from above, the second side surface 60S is located inside the first side surface 20S. The first deformation portion 51A is located outside the second side surface 60S and inside the first side surface 20S. Like the light source device 100 , the first deformation portion 51A does not contact the side where the first upper surface 20A and the first side surface 20S of the first base 20 are in contact (that is, the corner of the component). In addition, the first deformation portion 51A does not contact the side where the lower surface 60B and the second side surface 60S of the heat dissipation member 60 are in contact (that is, the corner of the member). By adjusting the position of the first deformation portion 51A so that the first deformation portion 51A of the metal component 50 is located in the above range, in other words, so that the first deformation portion 51A does not come into angular contact with the component, it is possible to suppress 51A may cause damage to the metal component 50 due to contact with the corner of the component.

In this embodiment, the height difference between the first upper surface 20A and the second upper surface 15A can also be absorbed by using the metal member 50 having the deformation portion 51 as a cover for sealing the package. Therefore, there is no need to perform dense height adjustment of each component, and the double-sided bonding of the laser diode 30 becomes easy. In this way, a sealing structure capable of achieving both airtight sealing and double-sided bonding of the chip is provided.

FIG. 12 is a cross-sectional view of the light source device 107 parallel to the YZ plane. The metal member 50 does not need to be joined to the lower surface 60B of the heat dissipation member 60 . The metal member 50 does not include a portion between the first base 20 and the heat dissipation member 60 , and may be configured to be hermetically sealed by being joined only to the peripheral area of the first upper surface 20A of the first base 20 .

An example of the manufacturing method of the light source device 100 to the light source device 107 of this embodiment will be described. In the example of this manufacturing method, metal foil is used as the metal member 50 .

(Example 1 of manufacturing method)

The laser diode 30 is mounted on the second base 25 to produce a light source part. The light source part is joined to the support surface 10A of the substrate 10, and the side wall part 15 surrounding the light source part is joined to the support surface 10A. Separately from these processes, a cover unit for sealing the package is produced by joining the first base 20 and the heat dissipation member 60 to the metal member 50 . Finally, the second part 50B of the metal member 50 included in the cover unit is joined to the second upper surface 15A of the side wall part 15, and the package in which the light source part and the side wall part 15 are installed is hermetically sealed by the cover unit. In this airtight seal, regardless of whether the first upper surface 20A is higher or lower than the second upper surface 15A, the height difference can be absorbed by deformation of the metal foil.

(Example 2 of manufacturing method)

The laser diode 30 is mounted on the second base 25 to produce a light source part. The light source part is joined to the support surface 10A of the substrate 10, and the side wall part 15 surrounding the light source part is joined to the support surface 10A. The first base 20 and the laser diode 30 are bonded. The second part 50B of the metal member 50 is joined to the second upper surface 15A of the side wall part 15, the first part 50A of the metal part 50 is joined to the first upper surface 20A of the first base 20, and the light source part and the side wall are mounted The package of part 15 is hermetically sealed. Finally, the heat dissipation component 60 and the metal component 50 are joined. In this manufacturing method, regardless of whether the first upper surface 20A is higher or lower than the second upper surface 15A, the height difference can be absorbed by the metal foil deformation.

When joining the second portion 50B of the metal member 50 to the second upper surface 15A of the side wall portion 15 , it is possible to limit the range in which the load is applied while avoiding the application of load to the entire second upper surface 15A. For example, a specific point on the second upper surface 15A may be irradiated with laser light, and the metal member 50 may be joined to the side wall part 15 by laser welding. This makes it easier to plastically deform the metal member (for example, metal foil) 50 , and as a result, the adhesion of the metal member 50 can be improved.

In the above-mentioned manufacturing process, for example, the plurality of light source units and the side wall portions 15 respectively surrounding the plurality of light source units are mounted on the substrate 10 . Next, the first base 20, the metal member 50, and the heat dissipation member 60 are installed. As in Example 1 of the manufacturing method, the cover unit can be produced and connected to each light source unit. Like Example 2 of the manufacturing method, after the first base 20 is provided in each light source part, the metal member 50 covering the side wall part 15 may be provided, and then the heat dissipation member 60 may be provided in each light source part. Finally, a plurality of light source devices 100 to 107 can be manufactured by dividing them into device units by cutting or the like at the side wall portions 15 between adjacent light source portions. In either method, the metal member 50 and the side wall portion 15 are joined and divided in an airtight sealing state. Therefore, the airtight sealing can be maintained in each divided device.

Referring to FIGS. 13 to 19 , several other structural examples of airtight seals using metal members for improving airtightness will be described.

FIG. 13 is a cross-sectional view of the light source device 108 parallel to the YZ plane. As shown by arrows in the figure, the second portion 50B of the metal member 50 in the light source device 108 is located inward of the outer edge of the second upper surface 15A of the side wall portion 15 and exposes a portion of the second upper surface 15A. The adhesive member 70 is provided on the exposed portion of the second upper surface 15A so as to cover the end portion of the second portion 50B of the metal member 50 . As a material of the adhesive member 70 , for example, solder such as gold-tin alloy and tin-silver-copper alloy can be used. In this way, by using the adhesive member 70, the enclosed space V can be airtightly sealed more reliably.

FIG. 14 is a cross-sectional view of the light source device 109 parallel to the YZ plane. FIG. 15 is a plan view of the pressing member 80 when viewed from the normal direction of the support surface 10A of the substrate 10 . In FIG. 15 , for reference, the inner edge of the second upper surface 15A of the side wall portion 15 is represented by a dotted line. The light source device 109 includes the pressing member 80 provided on the upper surface of the second portion 50B of the metal member 50 . The pressing member 80 illustrated in FIG. 15 is continuously formed in a rectangular ring shape along the second upper surface 15A. The pressing member 80 may be made of, for example, the same material as the metal member 50 , or a material such as ceramic or glass. The pressing member 80 is joined to the upper surface of the second portion 50B of the metal member 50 via the above-mentioned joining member. By adopting a structure in which the second portion 50B of the metal member 50 is sandwiched between the pressing member 80 and the side wall portion 15 via a joint member, airtightness can be improved.

It is preferable that the height from the support surface 10A to the upper surface 80A of the pressing member 80 is lower than the height from the support surface 10A to the lower surface 60B of the heat dissipation member 60 . Due to this height difference, the pressing member 80 does not come into contact with the heat dissipation member 60, so the size of the heat dissipation member 60 in the XZ plane can be enlarged.

FIG. 16 is a cross-sectional view of the light source device 110 parallel to the YZ plane. FIG. 17 is a plan view of the metal member 50 - 1 as seen from the normal direction of the support surface 10A of the substrate 10 . The metal member 50 - 1 illustrated in FIG. 17 is different from the metal member 50 in that it has a second portion 50B provided with a plurality of openings formed in parallel and discontinuously along the second deformation portion 51B of the metal member 50 - 1 55. The opening 55 can be formed in the second portion 50B by, for example, drilling. It should be noted that the shape or pattern of the opening 55 shown in FIG. 17 is an example, and the opening 55 may have a different shape or pattern. By forming the opening in the metal member, the contact area between the second upper surface 15A of the side wall portion 15 and the adhesive member 70 is increased. As a result, the adhesion between the adhesive member 70 and the side wall portion 15 can be improved, and the airflow can be improved. confidentiality.

FIG. 18 is a cross-sectional view of the light source device 111 parallel to the YZ plane. FIG. 19 is a plan view of the metal member 50 - 2 when viewed from the normal direction of the support surface 10A of the substrate 10 . The metal member 50 - 2 illustrated in FIG. 19 is different from the metal member 50 in that it has a first portion 50A in which an opening 55 is formed. It should be noted that the shape of the opening 55 shown in FIG. 19 is an example and may be different depending on design specifications and the like. By providing the opening 55 in the first portion 50A located at the center of the metal member 50 - 2 , twisting and wrinkles generated when the metal member is bent can be effectively suppressed. The opening 55 illustrated in FIG. 18 between the first base 20 and the heat dissipation member 60 may be filled with a joining member such as solder of gold-tin alloy or tin-silver-copper alloy. This can improve the joint strength of metal parts. Furthermore, the metal member 50-2 may have a larger number of openings in the second portion 50B like the metal member 50-1 described above.

(Second Embodiment)

A structural example of a light source device according to a second embodiment of the present invention will be described with reference to FIGS. 20 and 21 .

The light source device of this embodiment includes a plurality of laser diodes 30 , a plurality of conductive members 40 respectively corresponding to the plurality of laser diodes 30 , and one or more supporting members 45 . That is, the total number of conductive members 40 and supporting members 45 is greater than the number of laser diodes 30 .

FIG. 20 is a cross-sectional view of the light source device 112 parallel to the XY plane. FIG. 21 is a plan view of the second base 25 supporting two laser diodes 30 , two conductive members 40 and one supporting member 45 when viewed from the normal direction of the supporting surface 10A of the substrate 10 . Top view. In the example shown in FIG. 20 , two conductive members 40 - 1 and 40 - 2 corresponding to the two laser diodes 30 - 1 and 30 - 2 and a supporting member 45 are arranged on the first base 20 and the second base. Between seats 25.

The two laser diodes 30 - 1 and 30 - 2 are respectively arranged so that the electrode surfaces of the same polarity face the first wiring layer 21 or the second wiring layer 26 side. For example, the n-side electrode surface 30A is bonded to the first wiring layer 21 , and the p-side electrode surface 30B is bonded to the second wiring layer 26 . In this case, the external connection electrode 11 is electrically connected to the n-side electrode surface 30A of the laser diode 30-1 via the conductive member 40-1, and the p-side electrode surface 30B of the laser diode 30-1 is connected to the laser diode via the conductive member 40-2. The n-side electrode surface 30A of 30 - 2 is electrically connected, and the p-side electrode surface 30B of the laser diode 30 - 2 is electrically connected to the external connection electrode 12 . That is, in this example, the external connection electrode 11, the laser diode 30-1, the laser diode 30-2, and the external connection electrode 12 are connected in series via the two conductive members 40-1 and 40-2 in this order.

The support member 45 is a member that does not contribute to conduction, and may be formed of, for example, metal, silicon, glass, ceramics, or the same material as the substrate 10 described above. The support member 45 may be formed with the same thickness as the laser diode 30 . The support member 45 of this embodiment is a rectangular parallelepiped member with the same dimensions as the conductive member 40 , but is not limited to this shape. The lower surface of the support member 45 may be bonded to the second wiring layer 26 of the second base 25 via the joint portion, and the upper surface of the support member 45 may be bonded to the first wiring layer 21 of the first base 20 via the joint portion.

In the example shown in FIG. 21 , the conductive member 40 - 1 , the laser diode 30 - 1 , the conductive member 40 - 2 , the laser diode 30 - 2 and the supporting member 45 are arranged in this order with intervals along the X direction. The outer shapes of the laser diode 30, the conductive member 40, and the supporting member 45 are each substantially rectangular in plan view. The outer shape of the laser diode 30 - 1 is formed by connecting the vertices p1 to p4, and the outer shape of the laser diode 30 - 2 is formed by connecting the vertices p5 to p8. Similarly, the outer shape of the conductive member 40 - 1 is formed by connecting the vertices q1 to q4 , the outer shape of the conductive member 40 - 2 is formed by connecting the vertices q5 to q8 , and the outer shape of the support member 45 is formed by connecting the vertices q9 to q12 . The long sides of the rectangles of the laser diode 30 , the conductive member 40 and the supporting member 45 are parallel to the Z direction, and the short sides of the rectangles are parallel to the X direction. Here, parallelism can be included within ±5 degrees.

In the example shown in FIG. 21 , the first geometric figure formed by connecting the vertices p1 to p8 of the laser diode 30 is a rectangle, and the second geometric figure formed by connecting the vertices q1 to q12 of the conductive member 40 and the supporting member 45 is also a rectangle. . In Figure 21, the first geometric figure is represented by a dotted line, and the second geometric figure is represented by a dotted line. The conductive member 40-1, the laser diode 30-1, the conductive member 40-2, the laser diode 30-2, and the supporting member 45 are arranged on the third geometric figure so that the center of gravity G1 of the first geometric figure substantially coincides with the center of gravity G2 of the second geometric figure. On the second base 25. The centers of the shapes of the laser diodes 30-1 and 30-2 are respectively located inside the second geometric figure.

According to this embodiment, by using the support member 45, when the cover unit is joined to the side wall portion 15, the load applied to the laser diode 30 and the conductive member 40 and/or the center of gravity of the cover unit can be balanced. In particular, by making the center of gravity of the first geometric figure substantially coincide with the center of gravity of the second geometric figure, the stability during joining can be improved.

Industrial applicability

The light source device of the present invention can be suitably used as a light source in industrial fields that require a high-output laser light source, such as cutting of various materials, drilling, local heat treatment, surface treatment, metal welding, 3D printing, etc.

Explanation of reference signs

10: Substrate; 10A: Supporting surface; 10B: Bottom surface; 11, 12: External connection electrodes; 15: Side wall portion; 15A: Second upper surface; 15B: Bottom surface; 15C: Inner wall surface; 20: First base; 20A : First top; 20B: First mounting surface; 20S: First side; 21: First wiring layer; 25: Second base; 25A: Second mounting surface; 25B: Bottom; 26: Second wiring layer; 30: laser diode; 30A: n-side electrode surface; 30B: p-side electrode surface; 30E: emission end surface; 40: conductive component; 45: supporting component; 50: metal component; 50A: first part; 50B: second Part; 50C: connecting part; 51: deformation part; 51A: first deformation part; 51B: second deformation part; 55: opening; 60: heat dissipation component; 60B: bottom surface; 60S: second side; 61: heat dissipation component; 70: Adhesive parts; 80: Pressing parts; 100~112: Light source device.

Claims (15)

1. A light source device is provided with:

a substrate having a support surface;

a first base having a first mounting surface opposed to the support surface and a first upper surface located on an opposite side of the first mounting surface;

one or more laser diodes located between the substrate and the first base and having a p-side electrode surface and an n-side electrode surface located on the opposite side of the p-side electrode surface;

A side wall portion provided on the substrate and having a second upper surface and an inner wall surface, the side wall portion defining a space for accommodating the laser diode;

a heat dissipation member disposed above the first base;

a metal member joined to the heat radiating member and the second upper surface to seal the space;

the height from the bearing surface to the first upper surface is different from the height from the bearing surface to the second upper surface,

one of the p-side electrode surface or the n-side electrode surface is directly or indirectly joined to the support surface, and the other of the p-side electrode surface or the n-side electrode surface is joined to the first mounting surface.

2. The light source device according to claim 1,

the metal part is a metal foil and,

the metal foil has a deformed portion.

3. The light source device according to claim 2,

the metal foil includes a first portion joined to the heat sink, a second portion joined to the second upper surface, and a joint portion connecting the first portion and the second portion,

the deformation portion includes a first deformation portion located at a junction of the first portion and the coupling portion and a second deformation portion located at a junction of the second portion and the coupling portion.

4. A light source device according to claim 3,

at least a portion of the first portion is located between the heat sink member and the first base.

5. The light source device according to claim 4,

the height from the bearing surface to the first upper surface is greater than the height from the bearing surface to the second upper surface.

6. The light source device according to claim 5,

the heat dissipation member includes the first base in a plan view from a normal direction of the support surface.

7. The light source device according to claim 6,

a portion of the heat dissipation member overlaps a portion or all of the second upper surface in the plan view.

8. The light source device according to claim 6 or 7,

the first base has a first side along an outer edge,

the heat sink member has a second side along an outer edge,

the first side surface is positioned further inside the heat radiating member than the second side surface in the plan view,

the first deforming portion is located outside the first side surface and inside the second side surface.

9. The light source device according to claim 4,

the height from the bearing surface to the first upper surface is lower than the height from the bearing surface to the second upper surface.

10. The light source device according to claim 9,

the first base includes the heat radiating member in a plan view from a normal direction of the support surface.

11. The light source device according to claim 10,

the first base has a first side along an outer edge,

the heat sink member has a second side along an outer edge,

the second side surface is located inside the first base from the first side surface in the plan view,

the first deforming portion is located outside the second side surface and inside the first side surface.

12. The light source device according to any one of claims 2 to 11,

the metal foil has a base material and a metal film covering the base material,

the base material is at least one selected from the group consisting of aluminum, copper, gold, kovar alloy, titanium, stainless steel, tungsten copper alloy, beryllium copper alloy, titanium, nickel, silver, platinum, nichrome, stainless steel, tantalum, molybdenum, niobium, or an alloy thereof,

the metal film is formed of at least one selected from the group consisting of gold, platinum, titanium, nickel, chromium, palladium, and ruthenium.

13. The light source device according to any one of claims 1 to 12,

And a second base having a lower surface joined to the support surface and a second mounting surface on an opposite side of the lower surface and on which the laser diode is disposed,

the laser diode is coupled to the support surface via the second base.

14. The light source device according to claim 13,

the first base has a first wiring layer electrically connected to the other of the p-side electrode surface or the n-side electrode surface,

the second base has a second wiring layer electrically connected to the one of the p-side electrode surface or the n-side electrode surface.

15. The light source device according to claim 14,

the semiconductor device further includes a conductive member that is bonded to the first base and the second base and electrically connects the first wiring layer and the second wiring layer.