CN116926505A - Atomic layer deposition device and atomic layer deposition method - Google Patents

Abstract

The invention discloses an atomic layer deposition device and an atomic layer deposition method, wherein the atomic layer deposition device comprises a first reaction bed main body, a second reaction bed main body, a pair of first high-voltage devices, a pair of second high-voltage devices and a pair of working devices, wherein the first reaction bed main body and the second reaction bed main body are oppositely arranged at intervals along a first direction, and a workpiece to be processed is operatively positioned between the first reaction bed main body and the second reaction bed main body and is operatively moved along a second direction; the first high-pressure device and the second high-pressure device are respectively provided with a first air outlet and a second air outlet, and the first air outlets and the second air outlets are oppositely arranged along a first direction; the working device is provided with target gas outlets, and the two target gas outlets of the working device are oppositely arranged at intervals along the first direction. The gas sprayed out through the first high-pressure device and the second high-pressure device can clamp the workpiece to be processed along the edge, so that the first high-pressure device and the second high-pressure device do not directly contact the workpiece to be processed to pollute the workpiece to be processed.

Description

Atomic layer deposition apparatus and atomic layer deposition method

Technical field

Embodiments of the present invention relate to the field of atomic layer deposition, and in particular to atomic layer deposition devices and atomic layer deposition methods.

Background technique

Since its invention in the 1970s, atomic layer deposition (ALD) has been widely used in modern information, energy and biomedical industries. ALD's unique self-limited growth mechanism (Self-limitedGrowth Mechanism) makes it have very excellent low-temperature growth performance. It can ensure excellent film growth uniformity, shape retention and accuracy down to the nanometer level within 100°C or even at room temperature. film thickness controllability. The unique advantages demonstrated by ALD also give it a broad application prospect in the fields of organic electronics, printed electronics and flexible electronics that have developed rapidly in recent years.

The inventor found that there are at least the following problems in the prior art: in existing atomic layer deposition, the workpiece to be processed is generally placed in a sealed container, and the sealed container will be in direct contact with the workpiece to be processed, thereby contaminating the workpiece to be processed.

Contents of the invention

The purpose of the embodiments of the present invention is to provide an atomic layer deposition device and an atomic layer deposition method that can effectively reduce the difficulty of atomic layer deposition processing.

In order to solve the above technical problems, embodiments of the present invention provide an atomic layer deposition device, including:

A first reaction bed body and a second reaction bed body, the first reaction bed body and the second reaction bed body are arranged relatively spaced apart along the first direction, and the workpiece to be processed is operably located between the first reaction bed body and the second reaction bed body. between the second reaction bed bodies and operable to move in a second direction, the second direction being perpendicular to the first direction;

A pair of first high-pressure devices, the first high-pressure device has a first air outlet, and the two first air outlets of the pair of first high-pressure devices are arranged oppositely along the first direction, and are respectively located at the first air outlet. The opposite inner sides of a reaction bed body and the second reaction bed body; the pair of first high-pressure devices are operable to inject high-pressure protective gas toward the workpiece to be processed and clamp the workpiece to be processed;

A pair of second high-pressure devices, the second high-pressure device has a second air outlet, and the two second air outlets of the pair of second high-pressure devices are arranged oppositely along the first direction, and are respectively located on the first The opposite inner sides of a reaction bed body and the second reaction bed body; the pair of second high-pressure devices are operable to inject high-pressure protective gas toward the workpiece to be processed and clamp the workpiece to be processed; the first The air outlet and the second air outlet are spaced apart along the second direction;

A pair of working devices, the working devices have target gas outlets, the two target gas outlets of the pair of working devices are arranged relatively spaced apart along the first direction, and the pair of target gas outlets are respectively located on the first reaction bed body and the first reaction bed body. The second reaction bed body is on the opposite inner side, and the target gas outlet is located between the first gas outlet and the second gas outlet.

Compared with the prior art, the embodiment of the present invention can clamp the workpiece to be processed along the gas ejected by the first high-pressure device and the second high-pressure device. Direct contact with the workpiece contaminates the workpiece to be processed.

In one embodiment, the protective gas injected by the pair of second high-pressure devices forms a second protection zone between the first reaction bed body and the second reaction bed body;

The protective gas injected by the pair of first high-pressure devices forms a first protection zone between the first reaction bed body and the second reaction bed body;

Each of the pair of working devices injects target gas toward the workpiece to be processed, and forms a reaction zone between the first reaction bed body and the second reaction bed body;

The first protection zone, the second protection zone and the reaction zone are connected to each other along a second direction.

In one embodiment, the width of the first protection zone, the second protection zone and the reaction zone along the third direction is smaller than the width of the workpiece to be processed along the third direction;

Wherein, the third direction is perpendicular to the first direction and the second direction.

In one embodiment, the atomic layer deposition apparatus further includes:

A pair of first air extraction devices, the first air extraction device has a first air suction port, the two first air suction ports of the pair of first air extraction devices are arranged relatively spaced apart along the first direction, and the A pair of first suction ports are respectively located on opposite inner sides of the first reaction bed body and the second reaction bed body;

A pair of second air extraction devices, the second air extraction device has a second air suction port, the two second air suction ports of the pair of second air extraction devices are arranged relatively spaced apart along the first direction, and the A pair of second suction ports are respectively located on opposite inner sides of the first reaction bed body and the second reaction bed body, and the first suction port and the second suction port are arranged oppositely along the second direction. On both sides of the target gas outlet;

Wherein, a pair of first air extraction devices and a pair of second air extraction devices are operable to extract the target gas and the protective gas.

In one embodiment, the first high-voltage device and/or the second high-voltage device include:

a boosting mechanism that communicates with an external source;

a first high-pressure cavity, the first high-pressure cavity being connected with the supercharging mechanism;

a second high-pressure chamber, the first high-pressure chamber and the second high-pressure chamber are connected through a restricted pipeline;

Wherein, the second high-pressure cavity has a plurality of micropores facing the side of the workpiece to be processed, and each of the micropores constitutes the first air outlet or the second air outlet.

In one embodiment, the diameter of the micropores is less than or equal to 0.2 mm.

In one embodiment, the height of the second high-pressure cavity along the first direction is greater than or equal to 3 cm.

In one embodiment, the distance between the first air outlet or the second air outlet and the workpiece to be processed is less than or equal to 0.3 mm.

In one embodiment, the side plate of the second high-pressure cavity facing the workpiece to be processed is an air outlet plate, the air outlet plate extends along the second direction, and each of the micropores is evenly distributed in the On the vent board.

In one embodiment, the side plate of the second high-pressure chamber facing the workpiece to be processed is a breathable plate, and the breathable plate is made of porous material.

In one embodiment, the main body of the first reaction bed faces one side of the main body of the second reaction bed, and a part thereof is recessed in a direction away from the main body of the second reaction bed to form a first reaction zone;

The main body of the second reaction bed faces the side of the main body of the first reaction bed, and is partially recessed in a direction away from the main body of the first reaction bed to form a second reaction zone;

The first reaction zone and the second reaction zone are arranged opposite each other along the first direction, and together form a reaction zone, the target gas outlet is located in the reaction zone, and the first gas outlet and the third gas outlet are located in the reaction zone. Two gas outlets are arranged oppositely on both sides of the reaction zone along the second direction.

In one embodiment, the first exhaust device is located on the side of the first reaction zone facing the first gas outlet;

And/or, the second exhaust device is located on the side of the second reaction zone facing the second gas outlet.

In one embodiment, the atomic layer deposition device further includes a main control system. The main control system is communicatively connected with each of the first high-voltage devices and each of the second high-voltage devices, and controls each of the first high-voltage devices and each of the second high-voltage devices. The pressure of the gas injected by the second high-pressure device;

The main control system is operable to control the pressure of the gas ejected by each of the first high-pressure devices to be higher than the pressure of the gas ejected by each of the second high-pressure devices to drive the workpiece to be processed from the first The air outlet moves in the direction of the second air outlet;

Or, the main control system is operable to control the pressure of the gas injected by each of the second high-pressure devices to be higher than the pressure of the gas injected by each of the first high-pressure devices, so as to drive the workpiece to be processed from the The second air outlet moves toward the first air outlet.

In one embodiment, the main control system is communicatively connected with each of the working devices to control the pressure or displacement of the target gas injected by each of the working devices.

In one embodiment, a pair of first high-voltage devices, a pair of second high-voltage devices and a pair of working devices are combined into one reaction group, and the atomic layer deposition device includes multiple groups of the reaction groups;

Wherein, the reaction groups of each group are arranged sequentially along the second direction and are connected with each other.

In one embodiment, the target gas is a reaction gas or a purge gas.

The invention also provides an atomic layer deposition method, which includes the following steps:

Spray high-pressure protective gas along the first direction toward both ends of the workpiece to be processed, clamp the workpiece to be processed, and form a first protection zone;

Spray high-pressure protective gas toward both ends of the workpiece to be processed along the first direction, clamp the workpiece to be processed, and form a second protection zone; the first protection zone and the second protection zone are spaced apart from each other along the second direction. It is configured that the second direction is the moving direction of the workpiece to be processed, and the first direction is perpendicular to the second direction;

The target gas is sprayed toward the workpiece to be processed along the first direction, and a reaction zone is formed. The reaction zone is located between the first protection zone and the second protection zone, and the first protection zone and the second protection zone The reaction zone is sealed along a third direction that is perpendicular to the first direction and the second direction.

In one embodiment, the atomic layer deposition method further includes the following steps:

The pressure of the workpiece to be processed in the first protective zone from the high-pressure protective gas is greater than the pressure of the high-pressure protective gas that the workpiece to be processed in the second protective zone is to drive the workpiece to be processed. The workpiece to be processed moves along the second direction from the direction of the first protection zone to the direction of the second protection zone;

The pressure that the workpiece to be processed in the second protection zone bears from the high-pressure protective gas is greater than the pressure that the workpiece to be processed in the first protection zone bears from the high-pressure protective gas, so as to drive the workpiece to be processed. The workpiece to be processed moves along the second direction from the direction of the second protection zone to the direction of the first protection zone.

Description of the drawings

One or more embodiments are exemplified by the pictures in the corresponding drawings. These illustrative illustrations do not constitute limitations to the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements. Unless otherwise stated, the figures in the drawings are not intended to be limited to scale.

Figure 1 is a schematic structural diagram of an atomic layer deposition device in a first embodiment of the present invention;

Figure 2 is a schematic structural diagram of the first high-voltage device, the second high-voltage device and the working device in the first embodiment of the present invention;

Figure 3 is a schematic structural diagram of the first high-pressure device, the second high-pressure device and the working device when they include breathable plates in the first embodiment of the present invention;

Figure 4 is a schematic structural diagram when both sides of the workpiece to be processed are clamped by the first high-pressure device in the first embodiment of the present invention;

Figure 5 is a schematic structural diagram of the first embodiment of the present invention when the gas pressure injected by a pair of first high-pressure devices is greater than the gas pressure injected by a pair of second high-pressure devices;

Figure 6 is a schematic structural diagram of two reaction groups connected in series in the first embodiment of the present invention.

Explanation of reference symbols:

1. The main body of the first reaction bed; 11. The first reaction zone; 12. The reaction zone; 13. The first protection zone; 14. The second protection zone; 2. The main body of the second reaction bed; 21. The second reaction zone; 3 , first high-pressure device; 31. first gas outlet; 4. second high-pressure device; 41. second gas outlet; 5. working device; 51. target gas outlet; 61. workpiece to be processed; 62. first volume; 63. Volume 2; a. First direction; b. Second direction; c. Third direction; 7. First air extraction device; 8. Second air extraction device; 9. Reaction group; 101. First high pressure Cavity; 102, second high-pressure cavity; 103, restriction pipe; 1021, micropores; 1022, air outlet plate; 1023, breathable plate.

Detailed ways

In order to make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, each implementation mode of the present invention will be described in detail below with reference to the accompanying drawings. However, those of ordinary skill in the art will understand that in various embodiments of the present invention, many technical details are provided to enable readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solution claimed in this application can also be implemented.

In the following description, for the purpose of explaining the various disclosed embodiments, certain specific details are set forth in order to provide a thorough understanding of the various disclosed embodiments. However, one skilled in the relevant art will recognize that the embodiments may be practiced without one or more of these specific details. In other instances, well-known devices, structures, and techniques associated with the present application may not be shown or described in detail to avoid unnecessarily obscuring the description of the embodiments.

Unless the context requires otherwise, throughout the specification and claims, the word "include" and variations thereof, such as "includes" and "has" are to be understood in an open, inclusive sense, that is, to mean "includes, but not limited to".

Various embodiments of the present invention will be described in detail below with reference to the accompanying drawings, so that the purpose, features and advantages of the present invention can be more clearly understood. It should be understood that the embodiments shown in the drawings do not limit the scope of the present invention, but are only used to illustrate the essential spirit of the technical solution of the present invention.

Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of "in one embodiment" or "an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Additionally, specific features, structures, or characteristics may be combined in any manner in one or more embodiments.

As used in this specification and the appended claims, the singular forms "a," "," and "the" include plural referents unless the context clearly dictates otherwise. It should be noted that the term "or" is generally used in its sense including "and/or" unless the context clearly dictates otherwise.

In the following description, in order to clearly demonstrate the structure and working mode of the present invention, many directional words will be used to describe it, but "front", "back", "left", "right", "outside", "inside" should be used for description. "," "outward", "inward", "up", "down" and other words are to be understood as convenient terms and should not be understood as limiting terms.

The atomic layer deposition device of the first embodiment of the present invention is described below with reference to the accompanying drawings. As shown in Figure 1, the atomic layer deposition device includes: a first reaction bed body 1, a second reaction bed body 2, and a pair of first high-pressure devices. 3. A pair of second high-pressure devices 4 and a pair of working devices 5. As shown in Figure 1, the first reaction bed body 1 and the second reaction bed body 2 are arranged relatively apart along the first direction a, and the workpiece 61 to be processed is located in the first direction a. Between a reaction bed body 1 and a second reaction bed body 2, the workpiece 61 to be processed can move in a second direction b, which is perpendicular to the first direction a. Specifically, as shown in FIG. 1 , the workpiece 61 to be processed is a flexible material piece arranged roll-to-roll. The first direction a is the thickness direction of the workpiece 61 and the second direction b is the moving direction of the workpiece 61 .

As shown in FIG. 1 , the first high-pressure device 3 has a first air outlet 31 , and the two first air outlets 31 of a pair of the first high-pressure device 3 are arranged oppositely along the first direction a, and the two first air outlets 31 They are respectively located on opposite inner sides of the first reaction bed body 1 and the second reaction bed body 2, that is, the two first gas outlets 31 both spray protective gas toward the workpiece 61 to be processed. The pair of first high-pressure devices 3 can spray high-pressure protective gas toward the workpiece 61 to clamp the workpiece 61 , and the protective gas sprayed by the pair of first high-pressure devices 3 can flow between the first reaction bed body 1 and the first reaction bed body 1 . A first protection zone 13 can be formed between the two reaction bed bodies 2 .

Specifically, the two first gas outlets 31 can be respectively provided on the first reaction bed body 1 and the second reaction bed body 2. Of course, they may not be fixed on the first reaction bed body 1 and the second reaction bed body 2. For example, it can extend outside the first reaction bed body 1 and the second reaction bed body 2 .

As shown in FIG. 1 , the second high-pressure device 4 has a second air outlet 41 , and the two second air outlets 41 of a pair of second high-pressure devices 4 are arranged oppositely along the first direction a, and the two second air outlets 41 They are located at opposite inner sides of the first reaction bed body 1 and the second reaction bed body 2 respectively. A pair of second high-pressure devices 4 can spray high-pressure protective gas toward the workpiece 61 to clamp the workpiece 61 . The first gas outlet 31 and the second gas outlet 41 are spaced apart along the second direction b, and the protective gas injected by the pair of second high-pressure devices 4 can be between the first reaction bed body 1 and the second reaction bed body 2. The second protection zone 14 is formed.

In addition, as shown in Figure 1, the working device 5 has a target gas outlet 51. The two target gas outlets 51 of a pair of working devices 5 are relatively spaced along the first direction a, and the pair of target gas outlets 51 are respectively located in the first reaction area. The bed body 1 and the second reaction bed body 2 are on opposite inner sides. The target gas outlet 51 is located between the first gas outlet 31 and the second gas outlet 41 . Each pair of working devices 5 can inject target gas toward the workpiece 61 to be processed, and form a reaction zone 12 between the first reaction bed body 1 and the second reaction bed body 2 .

Since the gas ejected by the first high-pressure device and the second high-pressure device can clamp the workpiece to be processed, the first high-pressure device and the second high-pressure device do not need to directly contact the workpiece to be processed and contaminate the workpiece to be processed.

Further preferably, the first protection zone 13, the second protection zone 14 and the reaction zone 12 are connected to each other along the second direction. Therefore, the reaction zone 12 can be sealed by the first protection zone 13 and the second protection zone 14, so that the reaction zone 12 is in a completely isolated state.

Of course, it is further preferred that the width of the first protection zone 13 , the second protection zone 14 and the reaction zone 12 along the third direction c is smaller than the width of the workpiece 6 to be processed along the third direction c. As shown in FIG. 1 , the third direction c is the width direction of the workpiece 61 to be processed.

In the actual production process, the workpiece 61 to be processed can be suspended without physical contact through a pair of first high-pressure devices 3 and a pair of second high-pressure devices 4 . In this process, it can be avoided that a relatively hard support member supports the workpiece 61 to be processed, damaging the workpiece to be processed or contaminating the workpiece 61 to be processed.

The specific processing steps of the workpiece 61 are as follows: first use a pair of first high-pressure devices 3 and a pair of second high-pressure devices 4 to clamp the workpiece 61 without physical contact, and then use a pair of working devices 5 to clamp the workpiece 61 toward the workpiece 61. The workpiece 61 is sprayed with purge gas. After the impurities in the reaction zone 12 are purged, the reaction gas is sprayed toward the workpiece 61 through a pair of working devices 5. At this time, the atomic layer deposition reaction can be completed. Of course, in some embodiments, the pair of working devices 5 may not inject the purge gas, but directly inject the reaction gas, and use the reaction gas for purging.

Specifically, as shown in Figure 1, further, the atomic layer deposition device further includes: a pair of first air extraction devices 7 and a pair of second air extraction devices 8. The first air extraction device 7 has a first air suction port, The two first suction ports of the pair of first air extraction devices 7 are arranged relatively spaced apart along the first direction a, and the pair of first suction ports are respectively located opposite the first reaction bed body 1 and the second reaction bed body 2. inside.

At the same time, as shown in Figure 1, the second air extraction device 8 has a second suction port. The two second air suction ports of a pair of second air extraction devices 8 are arranged relatively spaced apart along the first direction a, and a pair of second air suction ports are arranged relatively apart along the first direction a. The two suction ports are respectively located on opposite inner sides of the first reaction bed body 1 and the second reaction bed body 2. The first suction port and the second suction port are arranged oppositely on both sides of the target gas outlet 51 along the second direction b.

A pair of first air extraction devices 7 and a pair of second air extraction devices 8 can extract the target gas and the protective gas. Specifically, as shown in Figure 1, when a pair of first high-pressure devices 3, a pair of second high-pressure devices 4 and the working device 5 all inject gas towards the workpiece 61, through a pair of first air extraction devices 7 and a The second gas extraction device 8 evacuates the gas in the first protection zone 13 and the reaction zone 12 and the second protection zone 14 and the reaction zone 12 to prevent gases in the first protection zone 13 and the second protection zone 14 Gas entering the protective zone interferes with the deposition of reaction gas in the reaction zone 12 .

Specifically, both the first air extraction device 7 and the second air extraction device 8 have an air extraction pipe and an air extraction pump. The air extraction pump is connected to the air extraction pipe. The air suction port of the air extraction pipe is the first air suction port or the second air suction port. The protective gas or target gas can be extracted through an air pump.

Specifically, the air extraction pipe can be arranged in a spiral manner within the first protection zone 13 and the second protection zone, and a plurality of mutually spaced air extraction holes are provided on the air extraction pipe along the length direction of the air extraction pipe.

In addition, it should be noted that the above-mentioned target gas can be a purge gas or a reaction gas. Specifically, the protective gas and the purge gas can be high-purity inert gases such as nitrogen. The reaction gas can be adjusted according to different reaction needs.

In addition, specifically, as shown in Figures 2 to 4, the first high-pressure device 3 and the second high-pressure device 4 each include: a supercharging mechanism, a first high-pressure cavity 101 and a second high-pressure cavity 102. The supercharging mechanism and the external The gas source is connected, the first high-pressure chamber 101 is connected with the supercharging mechanism, and the second high-pressure chamber 102 is connected with the second high-pressure chamber 102 through the restriction pipe 103 . At the same time, as shown in FIGS. 2 and 3 , the second high-pressure cavity 102 has a plurality of microholes 1021 facing the workpiece 61 . Each microhole 1021 constitutes the above-mentioned first air outlet 31 or the second air outlet. 41. Specifically, the boosting mechanism may be a boosting pump or other fans.

In some embodiments, as shown in Figures 1 and 2, the side plate of the second high-pressure cavity 102 facing the workpiece 61 is an air outlet plate 1022. The air outlet plate 1022 extends along the second direction b, and each micro hole 1021 are evenly distributed on the air outlet plate 1022. Specifically, the diameter of the micropores 1021 is less than or equal to 0.2 mm. The height of the second high-pressure cavity along the first direction is greater than or equal to 3 cm.

Specifically, as shown in FIGS. 2 to 4 , the distance between the first air outlet 31 and the second air outlet 41 from the workpiece 61 is less than or equal to 0.3 mm.

Of course, in some embodiments, as shown in FIG. 3 , the side plate of the second high-pressure chamber 102 facing the workpiece 61 is an air-permeable plate 1023, and the air-permeable plate 1023 is made of porous material. Preferably, the pore diameter of the porous material may be less than or equal to 500 microns.

Of course, in some embodiments, only the first high-pressure device 3 may include the first high-pressure chamber 101 and the second high-pressure chamber 102 , or only the second high-pressure device 4 may include the first high-pressure chamber 101 and the second high-pressure chamber 102 . Cavity 102. When the first high-pressure device 3 or the second high-pressure device 4 does not include the above-mentioned first high-pressure chamber 101 and the second high-pressure chamber 102, then the first high-pressure device 3 or the second high-pressure device 4 may only include one pipe and settings. The booster pump on the pipeline is connected to the protective gas source, and the outlet of the pipeline is the above-mentioned first gas outlet 31 or second gas outlet 41.

Specifically, in this embodiment, as shown in Figure 1, Figure 5 and Figure 6, the second high-pressure chamber 102 is provided on the first reaction bed body 1 or the second reaction bed body 2, as shown in Figure 1, The side plate of the second high-pressure chamber 102 facing the workpiece 61 is the above-mentioned air outlet plate 1022 or breathable plate 1023. In this embodiment, each first high-pressure device 3 and each second high-pressure device 4 include the above-mentioned first high-pressure device 3 and each second high-pressure device 4. The high pressure chamber 101 and the second high pressure chamber 102.

In this embodiment, since the first high-pressure device 3 or the second high-pressure device 4 both includes the first high-pressure chamber 101 and the second high-pressure chamber 102, and the first high-pressure chamber 101 and the second high-pressure chamber 102 The restricted pipes 103 are used to communicate between them. Therefore, when the gas flows from the high pressure area (the first high pressure device 3) to the low pressure area (the second high pressure device 4), through the fluid dynamic structure design, the gas can form a clear transition from the high pressure area to the low pressure area. The boundary can be controlled into a thin gas layer with a thickness on the order of microns, generally within 100 microns. The core of the control method is to limit the outflow of high-pressure gas so that the high-pressure gas maintains an effective pressure in a certain space. The outflow of gas is mainly controlled by the inner diameter of the micropores opened in the second high-pressure cavity. When The diameter of the micropores is less than or equal to 0.2 mm. At the same time, when the height of the second high-pressure chamber along the first direction is greater than or equal to 3 cm, the pressure in the second high-pressure chamber is basically equal to the pressure in the first high-pressure chamber.

In this embodiment, the second high-pressure chamber 102 is a buffer area. By limiting the gas outlet of the second high-pressure chamber 102, the gas in the second high-pressure chamber 102 cannot be smoothly discharged to reach a certain pressure. Keep. When the air outlet of the second high-pressure chamber 102 is further restricted, the pressure in the second high-pressure chamber 102 can be made approximately equal to the pressure in the first high-pressure chamber 101 . The flow restriction measure of the second high-pressure cavity 102 can be implemented through the above-mentioned air outlet plate 1022 and air permeable plate 1023, as shown in Figures 2 to 4. The gas flowing out from the second high-pressure chamber 102 is further restricted in a narrow thin space, that is, between the first gas outlet 31 or the second gas outlet 41 and the workpiece 61, as shown in Figures 2 to 4 shows that a narrow high-pressure gas thin layer L1 will be formed between the first gas outlet 31 or the second gas outlet 41 and the workpiece 61, and the pressure of the high-pressure gas thin layer 1 is equal to the pressure in the second high-pressure cavity 102. , and at the same time equal to the pressure in the first high-pressure chamber 101. The best state is achieved when the thickness of the high-pressure gas thin layer L1 is less than or equal to 0.3mm.

In addition, since a plurality of micropores 1021 are evenly distributed on the gas outlet plate 1022, or the gas permeable plate 1023 is made of porous material, the pressure of the high-pressure gas thin layer L1 is uniform. Therefore, the high-pressure gas thin layer L1 has 100% sealing performance, that is, the high-pressure gas thin layer can 100% isolate the two spaces in contact with it, that is, the reaction zone 12 can be completely sealed. Traditional vacuum coating technology (including atomic layer deposition ALD, chemical vapor deposition PVD, physical vapor deposition PVD, etc.) isolates the outside world from the reaction space through a vacuum chamber. Vacuuming is not entirely necessary for the process, such as ALD, CVD, etc. . Compared with traditional vacuum isolation, the high-pressure gas thin layer L1 in this embodiment has 100% sealing performance, so it can be used to replace the design limitations of the traditional vacuum chamber, so that the reaction zone 12 is not physically isolated from the external environment. This design idea will bring many advantages, including greatly simplifying system design, and the biggest advantage is the simplicity and low cost of implementing a large-area continuous roll-to-roll process.

The above-mentioned high-pressure gas thin layer L1 has 100% pressure uniformity. This uniform gas layer can achieve suspension of the processed sample without physical contact. At the same time, due to the high uniformity of the pressure, it can ensure that the flatness of the processed sample itself is not affected. It is especially suitable for the processing of flexible materials. As shown in Figure 4, the two high-pressure gas thin layers L1 above and below the workpiece 61 can suspend the sample without contact. While suspended, the sample to be processed can be clamped without contact by the uniform high pressure of the high-pressure gas thin layer L1. The force surface is evenly stressed.

The above-mentioned suspended clamping achieved by the high-pressure gas thin layer L1 will further play a key role in assisting movement when the sample being processed moves. For example, when a flexible membrane material is in a roll-to-roll motion state, due to the action of tension, the flexible material will deform, especially a ripple-shaped deformation. This deformation is the common deformation of all current flexible materials (especially large-area) roll-to-roll surfaces. The problems faced during processing have a great adverse impact on the quality of surface treatment. The 100% high-uniform high-pressure non-contact suspended clamping of high-pressure gas thin layer L1 can perfectly solve the above problems without affecting the roll-to-roll movement of flexible materials.

In addition, specifically, as shown in Figures 1, 5 and 6, the first reaction bed body 1 faces the second reaction bed body 2, and a part of it is recessed in the direction away from the second reaction bed body 2 to form the first reaction zone. 1211. At the same time, part of the second reaction bed body 2 faces the first reaction bed body 1 and is recessed away from the first reaction bed body 1 to form a second reaction zone 2112. The first reaction zone 1211 and the second reaction zone 2112 are arranged oppositely along the first direction a, and together form the above-mentioned reaction zone 12. The above-mentioned target gas outlet 51 is located in the reaction zone 12, and the first gas outlet 31 and the second gas outlet 41 are arranged oppositely on both sides of the reaction zone 12 along the second direction b. Since both the first reaction zone 1211 and the second reaction zone 2112 are recessed areas, the reaction zone 12 can be better sealed.

In addition, the atomic layer deposition device includes a main control system, which is communicatively connected with each first high-pressure device 3 and each second high-pressure device 4, and controls the gas ejected by each first high-pressure device 3 and each second high-pressure device 4. pressure.

The main control system operatively controls the pressure of the gas ejected by each first high-pressure device 3 to be higher than the pressure of the gas ejected by each second high-pressure device 4 to drive the workpiece 61 to be processed from the first gas outlet 31 to the second outlet. The gas port 41 moves in the direction; or the main control system can operatively control the pressure of the gas ejected by each second high-pressure device 4 to be higher than the pressure of the gas ejected by each first high-pressure device 3, so as to drive the workpiece 61 to be processed from the second outlet. The air port 41 moves toward the first air outlet 31 .

Specifically, the main control system is communicatively connected with the supercharging mechanism, and controls the pressure of the gas injected by the first high-pressure device 3 and the second high-pressure device 4 by controlling the gas pressure output by the supercharging mechanism. Of course, if the first high-pressure device 3 and the second high-pressure device 4 only include booster pumps, the main control system will only communicate with the booster pumps.

In actual situations, as shown in FIG. 5 , when the workpiece 61 to be processed needs to be driven to move in the second direction b from the first air outlet 31 to the second air outlet 41 , the injection rate of each first high-pressure device 3 is increased. The pressure of the gas drives the workpiece 61 to move in the second direction b from the first gas outlet 31 to the second gas outlet 41 . On the contrary, when it is necessary to drive the workpiece 61 to move in the second direction b from the second gas outlet 41 to the first gas outlet 31 , the pressure of the gas injected by each second high-pressure device 4 is increased, and the driving force of the workpiece 61 is increased. , so that the workpiece 61 to be processed moves along the second direction b from the second air outlet 41 to the first air outlet 31 .

In addition, specifically, the structure of the working device 5 may be the same as the structure of the above-mentioned first high-pressure device 3 and second high-pressure device 4. The difference is that the working device 5 is connected to the reactive gas source or the purge gas source. Therefore, the main control system is connected through communication with each working device 5 to control the pressure and displacement of the target gas injected by each working device 5. Specifically, the main control system is communicated with the boosting mechanism or boosting pump.

In addition, in some embodiments, as shown in Figure 6, a pair of first high-voltage devices 3, a pair of second high-voltage devices 4 and a pair of working devices 5 are combined into a reaction group 9, and the atomic layer deposition device includes multiple reaction groups. Group 9; wherein each reaction group 9 is arranged sequentially along the second direction b, and the first protection zone 13 and the second protection zone 14 that are close to each other between two adjacent reaction groups 9 are close to each other or overlap each other.

Through the above method, when multiple reaction groups 9 are connected in series, a continuous distribution of the work space will be constructed, and the atomic layer deposition process in continuous motion will be realized.

The process steps of this embodiment are as follows: the first roll 62 and the second roll 63 are arranged along the first direction a, the workpiece 61 to be processed is wound on the first roll 62 and the second roll 63, and the workpiece 61 to be processed is arranged along the first direction a toward the direction to be processed. High-pressure protective gas is sprayed from both ends of the workpiece 61 to clamp the workpiece 61 and form the first protection zone 13; high-pressure protective gas is sprayed toward both ends of the workpiece 61 along the first direction a to clamp the workpiece 61. The workpiece 61 is processed, and a second protection zone 14 is formed; the first protection zone 13 and the second protection zone 14 are spaced apart from each other along the second direction b, and the second direction b is the direction of the workpiece 61 to be processed. Moving direction, the first direction a is perpendicular to the second direction b;

The purge gas is sprayed toward the workpiece 61 along the first direction a to form a purge area. The purge area is located between the first protection zone 13 and the second protection zone 14 , and the first The protection zone 13 and the second protection zone 14 seal the purge zone along a third direction c, which is perpendicular to the first direction a and the second direction b; through purging, the reaction can be The impurities in zone 12 are blown away.

Stop injecting the purge gas, inject the reaction gas toward the workpiece 61 along the first direction a, and form a reaction zone 12 , which is the same as the purge zone.

In addition, preferably, during the reaction process of the workpiece 61 to be processed, the pressure that the workpiece 61 to be processed in the first protection zone 13 bears from the high-pressure protective gas is greater than the pressure that the workpiece 61 to be processed in the second protection zone 14 bears from the high-pressure protection gas. The pressure of the gas drives the workpiece 61 to be processed to move in the second direction b from the first protection zone 13 to the second protection zone 14;

The pressure of the workpiece 61 to be processed in the second protection zone 14 from the high-pressure protective gas is greater than the pressure of the workpiece 61 to be processed in the first protection zone 13 from the high-pressure protective gas, so as to drive the workpiece 61 to be processed in the second direction b. Move from the direction of the second protection zone 14 to the direction of the first protection zone 13 .

It should be noted that the above two steps are in no particular order. Of course, in addition to the above method, the workpiece 61 to be processed can also be moved by driving the first roll 62 and the second roll 63 to rotate along their respective axial directions.

The invention also provides an atomic layer deposition method. The atomic layer deposition method includes the following steps:

Inject high-pressure protective gas along the first direction a toward both ends of the workpiece 61 to be processed, clamp the workpiece 61 to be processed, and form the first protection zone 13;

High-pressure protective gas is sprayed toward both ends of the workpiece 61 along the first direction a to clamp the workpiece 61 and form a second protection zone 14; the first protection zone 13 and the second protection zone 14 are mutually exclusive along the second direction b. Set at intervals, the second direction b is the moving direction of the workpiece 61 to be processed, and the first direction a is perpendicular to the second direction b;

The target gas is sprayed toward the workpiece 61 along the first direction a to form a reaction zone. The reaction zone is located between the first protection zone 13 and the second protection zone 14 , and the first protection zone 13 and the second protection zone 14 are along the first direction a. Seal the reaction zone in two directions b.

The above atomic layer deposition method can be implemented by using the atomic layer deposition apparatus in the above first embodiment. The specific implementation manner has been explained in detail in the first embodiment, and therefore will not be described again here.

It should be noted that the above target gas can be directly the reaction gas, or the purge gas can be injected first, and then the target gas can be injected.

In addition, the atomic layer deposition method also includes the following steps:

The pressure of the workpiece 61 to be processed in the first protection zone 13 from the high-pressure protective gas is greater than the pressure of the workpiece 61 to be processed in the second protection zone 14 from the high-pressure protective gas, so as to drive the workpiece 61 to be processed in the second direction b. Move from the direction of the first protection zone 13 to the direction of the second protection zone 14;

The pressure of the workpiece 61 to be processed in the second protection zone 14 from the high-pressure protective gas is greater than the pressure of the workpiece 61 to be processed in the first protection zone 13 from the high-pressure protective gas, so as to drive the workpiece 61 to be processed in the second direction b. Move from the direction of the second protection zone 14 to the direction of the first protection zone 13 .

The preferred embodiments of the present invention have been described in detail above, but it will be understood that aspects of the embodiments can be modified if necessary to employ aspects, features and concepts from various patents, applications and publications to provide additional embodiments.

These and other changes can be made to the embodiments in view of the above detailed description. In general, in the claims, the terms used should not be construed as limiting to the specific embodiments disclosed in the specification and claims, but should be understood to include all possible embodiments together with all equivalents to which such claims are entitled. scope.

The steps of the various methods above are divided just for the purpose of clear description. During implementation, they can be combined into one step or some steps can be split into multiple steps. As long as they include the same logical relationship, they are all within the scope of protection of this patent. ; Adding insignificant modifications or introducing insignificant designs to the algorithm or process without changing the core design of the algorithm and process are within the scope of protection of this patent.

Those of ordinary skill in the art can understand that the above-mentioned embodiments are specific examples for realizing the present invention, and in practical applications, various changes can be made in form and details without departing from the spirit and spirit of the present invention. scope.

Claims (17)

1. An atomic layer deposition device, characterized in that it includes: A first reaction bed body and a second reaction bed body, the first reaction bed body and the second reaction bed body are arranged relatively spaced apart along the first direction, and the workpiece to be processed is operably located between the first reaction bed body and the second reaction bed body. between the second reaction bed bodies and operable to move in a second direction, the second direction being perpendicular to the first direction; A pair of first high-pressure devices, the first high-pressure device has a first air outlet, and the two first air outlets of the pair of first high-pressure devices are arranged oppositely along the first direction, and are respectively located at the first air outlet. The opposite inner sides of a reaction bed body and the second reaction bed body; the pair of first high-pressure devices are operable to inject high-pressure protective gas toward the workpiece to be processed and clamp the workpiece to be processed; A pair of second high-pressure devices, the second high-pressure device has a second air outlet, and the two second air outlets of the pair of second high-pressure devices are arranged oppositely along the first direction, and are respectively located on the first The opposite inner sides of a reaction bed body and the second reaction bed body; the pair of second high-pressure devices are operable to inject high-pressure protective gas toward the workpiece to be processed and clamp the workpiece to be processed; the first The air outlet and the second air outlet are spaced apart along the second direction; A pair of working devices, the working devices have target gas outlets, the two target gas outlets of the pair of working devices are arranged relatively spaced apart along the first direction, and the pair of target gas outlets are respectively located on the first reaction bed body and the first reaction bed body. The second reaction bed body is on the opposite inner side, and the target gas outlet is located between the first gas outlet and the second gas outlet. 2. The atomic layer deposition device according to claim 1, wherein the protective gas injected by the pair of second high-pressure devices is between the first reaction bed body and the second reaction bed body. Form a second protected area; The protective gas injected by the pair of first high-pressure devices forms a first protection zone between the first reaction bed body and the second reaction bed body; Each of the pair of working devices injects target gas toward the workpiece to be processed, and forms a reaction zone between the first reaction bed body and the second reaction bed body; The first protection zone, the second protection zone and the reaction zone are connected to each other along a second direction. 3. The atomic layer deposition apparatus according to claim 2, wherein the width of the first protection zone, the second protection zone and the reaction zone along the third direction is smaller than the width along the third direction of the workpiece to be processed. The width in the third direction; Wherein, the third direction is perpendicular to the first direction and the second direction. 4. The atomic layer deposition apparatus according to claim 1, characterized in that the atomic layer deposition apparatus further includes: A pair of first air extraction devices, the first air extraction device has a first air suction port, the two first air suction ports of the pair of first air extraction devices are arranged relatively spaced apart along the first direction, and the A pair of first suction ports are respectively located on opposite inner sides of the first reaction bed body and the second reaction bed body; A pair of second air extraction devices, the second air extraction device has a second air suction port, the two second air suction ports of the pair of second air extraction devices are arranged relatively spaced apart along the first direction, and the A pair of second suction ports are respectively located on opposite inner sides of the first reaction bed body and the second reaction bed body. The first suction port and the second suction port are arranged opposite to each other along the second direction. Both sides of the target gas outlet; Wherein, a pair of first air extraction devices and a pair of second air extraction devices are operable to extract the target gas and the protective gas. 5. The atomic layer deposition device according to claim 1, wherein the first high-voltage device and/or the second high-voltage device include: a boosting mechanism that communicates with an external source; a first high-pressure cavity, the first high-pressure cavity being connected with the supercharging mechanism; a second high-pressure chamber, the first high-pressure chamber and the second high-pressure chamber are connected through a restricted pipeline; Wherein, the second high-pressure cavity has a plurality of micropores facing the side of the workpiece to be processed, and each of the micropores constitutes the first air outlet or the second air outlet. 6. The atomic layer deposition apparatus according to claim 5, wherein the diameter of the micropores is less than or equal to 0.2 mm. 7. The atomic layer deposition apparatus according to claim 6, wherein the height of the second high-pressure chamber along the first direction is greater than or equal to 3 cm. 8. The atomic layer deposition apparatus according to claim 6, wherein the distance between the first air outlet or the second air outlet and the workpiece to be processed is less than or equal to 0.3 mm. 9. The atomic layer deposition apparatus according to claim 6, wherein the side plate of the second high-pressure chamber facing the workpiece to be processed is an air outlet plate, and the air outlet plate extends along the second direction. Extend, each of the micropores is evenly distributed on the air outlet plate. 10. The atomic layer deposition apparatus according to claim 6, wherein the side plate of the second high-pressure chamber facing the workpiece to be processed is a breathable plate, and the breathable plate is made of porous material. 11. The atomic layer deposition apparatus according to claim 4, wherein a portion of the first reaction bed body is recessed toward the side of the second reaction bed body away from the second reaction bed body. first reaction zone; The main body of the second reaction bed faces the side of the main body of the first reaction bed, and is partially recessed in a direction away from the main body of the first reaction bed to form a second reaction zone; The first reaction zone and the second reaction zone are arranged opposite each other along the first direction, and together form a reaction zone, the target gas outlet is located in the reaction zone, and the first gas outlet and the third gas outlet are located in the reaction zone. Two gas outlets are arranged oppositely on both sides of the reaction zone along the second direction. 12. The atomic layer deposition device according to claim 1, characterized in that the atomic layer deposition device further includes a main control system, and the main control system communicates with each of the first high-voltage devices and each of the second high-voltage devices. Connected to control the pressure of the gas injected by each of the first high-pressure devices and each of the second high-pressure devices; The main control system is operable to control the pressure of the gas ejected by each of the first high-pressure devices to be higher than the pressure of the gas ejected by each of the second high-pressure devices to drive the workpiece to be processed from the first The air outlet moves in the direction of the second air outlet; Or, the main control system is operable to control the pressure of the gas injected by each of the second high-pressure devices to be higher than the pressure of the gas injected by each of the first high-pressure devices, so as to drive the workpiece to be processed from the The second air outlet moves toward the first air outlet. 13. The atomic layer deposition apparatus according to claim 12, wherein the main control system is communicatively connected with each of the working devices to control the pressure or displacement of the target gas injected by each of the working devices. 14. The atomic layer deposition device according to claim 1, wherein a pair of first high-voltage devices, a pair of second high-voltage devices and a pair of working devices are combined into a reaction group, and the atomic layer deposition device includes a plurality of group the reaction group; Wherein, the reaction groups of each group are arranged sequentially along the second direction and are connected with each other. 15. The atomic layer deposition apparatus according to claim 1, wherein the target gas is a reaction gas or a purge gas. 16. An atomic layer deposition method, characterized in that the atomic layer deposition method includes the following steps: Spray high-pressure protective gas along the first direction toward both ends of the workpiece to be processed, clamp the workpiece to be processed, and form a first protection zone; Spray high-pressure protective gas toward both ends of the workpiece to be processed along the first direction, clamp the workpiece to be processed, and form a second protection zone; the first protection zone and the second protection zone are spaced apart from each other along the second direction. It is configured that the second direction is the moving direction of the workpiece to be processed, and the first direction is perpendicular to the second direction; The target gas is sprayed toward the workpiece to be processed along the first direction, and a reaction zone is formed. The reaction zone is located between the first protection zone and the second protection zone, and the first protection zone and the second protection zone The reaction zone is sealed in the second direction. 17. The atomic layer deposition method according to claim 16, characterized in that the atomic layer deposition method further includes the following steps: The pressure of the workpiece to be processed in the first protective zone from the high-pressure protective gas is greater than the pressure of the high-pressure protective gas that the workpiece to be processed in the second protective zone is to drive the workpiece to be processed. The workpiece to be processed moves along the second direction from the direction of the first protection zone to the direction of the second protection zone; The pressure that the workpiece to be processed in the second protection zone bears from the high-pressure protective gas is greater than the pressure that the workpiece to be processed in the first protection zone bears from the high-pressure protective gas, so as to drive the workpiece to be processed. The workpiece to be processed moves along the second direction from the direction of the second protection zone to the direction of the first protection zone.