CN116836750B - Diamond wire cutting fluid, preparation method and application thereof - Google Patents
Diamond wire cutting fluid, preparation method and application thereof Download PDFInfo
- Publication number
- CN116836750B CN116836750B CN202310771377.6A CN202310771377A CN116836750B CN 116836750 B CN116836750 B CN 116836750B CN 202310771377 A CN202310771377 A CN 202310771377A CN 116836750 B CN116836750 B CN 116836750B
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- China
- Prior art keywords
- surfactant
- parts
- cutting fluid
- diamond wire
- wire cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002173 cutting fluid Substances 0.000 title claims abstract description 82
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 69
- 239000010432 diamond Substances 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title abstract description 18
- 239000004094 surface-active agent Substances 0.000 claims abstract description 186
- 238000005520 cutting process Methods 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 44
- 239000012498 ultrapure water Substances 0.000 claims abstract description 44
- 239000000080 wetting agent Substances 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 235000012431 wafers Nutrition 0.000 claims abstract description 41
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 17
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 33
- 229920000570 polyether Polymers 0.000 claims description 33
- 239000002480 mineral oil Substances 0.000 claims description 28
- 235000010446 mineral oil Nutrition 0.000 claims description 28
- 239000013530 defoamer Substances 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 23
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 21
- -1 fatty acid ester Chemical class 0.000 claims description 16
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 14
- 229930195729 fatty acid Natural products 0.000 claims description 14
- 239000000194 fatty acid Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 9
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 9
- LDVVTQMJQSCDMK-UHFFFAOYSA-N 1,3-dihydroxypropan-2-yl formate Chemical compound OCC(CO)OC=O LDVVTQMJQSCDMK-UHFFFAOYSA-N 0.000 claims description 8
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims description 8
- 150000004665 fatty acids Chemical class 0.000 claims description 8
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims description 6
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims description 6
- 150000002193 fatty amides Chemical class 0.000 claims description 5
- 239000005639 Lauric acid Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- FATBGEAMYMYZAF-KTKRTIGZSA-N oleamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(N)=O FATBGEAMYMYZAF-KTKRTIGZSA-N 0.000 claims description 4
- FATBGEAMYMYZAF-UHFFFAOYSA-N oleicacidamide-heptaglycolether Natural products CCCCCCCCC=CCCCCCCCC(N)=O FATBGEAMYMYZAF-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- UAUDZVJPLUQNMU-UHFFFAOYSA-N Erucasaeureamid Natural products CCCCCCCCC=CCCCCCCCCCCCC(N)=O UAUDZVJPLUQNMU-UHFFFAOYSA-N 0.000 claims description 3
- UAUDZVJPLUQNMU-KTKRTIGZSA-N erucamide Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(N)=O UAUDZVJPLUQNMU-KTKRTIGZSA-N 0.000 claims description 3
- 229910013664 m—(OCH2CH2)n—OH Inorganic materials 0.000 claims description 3
- YASWBJXTHOXPGK-UHFFFAOYSA-N n-(4-hydroxyphenyl)octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)NC1=CC=C(O)C=C1 YASWBJXTHOXPGK-UHFFFAOYSA-N 0.000 claims description 3
- DNISEZBAYYIQFB-PHDIDXHHSA-N (2r,3r)-2,3-diacetyloxybutanedioic acid Chemical compound CC(=O)O[C@@H](C(O)=O)[C@H](C(O)=O)OC(C)=O DNISEZBAYYIQFB-PHDIDXHHSA-N 0.000 claims description 2
- ARIWANIATODDMH-UHFFFAOYSA-N Lauric acid monoglyceride Natural products CCCCCCCCCCCC(=O)OCC(O)CO ARIWANIATODDMH-UHFFFAOYSA-N 0.000 claims description 2
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- 150000002430 hydrocarbons Chemical group 0.000 claims 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 claims 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 claims 1
- 229960002446 octanoic acid Drugs 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 15
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- 230000007797 corrosion Effects 0.000 abstract description 12
- 125000001183 hydrocarbyl group Chemical group 0.000 abstract description 7
- 230000005764 inhibitory process Effects 0.000 abstract description 6
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical group [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 description 30
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 16
- 239000007788 liquid Substances 0.000 description 13
- 238000005303 weighing Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
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- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 2
- 125000006538 C11 alkyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000006539 C12 alkyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
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- 239000000693 micelle Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- KMZHZAAOEWVPSE-UHFFFAOYSA-N 2,3-dihydroxypropyl acetate Chemical compound CC(=O)OCC(O)CO KMZHZAAOEWVPSE-UHFFFAOYSA-N 0.000 description 1
- AQZFHYYQYWQFAV-UHFFFAOYSA-N 4-acetyloxy-2,3-dihydroxy-4-oxobutanoic acid Chemical compound CC(=O)OC(=O)C(O)C(O)C(O)=O AQZFHYYQYWQFAV-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
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- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
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- 239000010959 steel Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
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- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- C10M2213/00—Organic macromolecular compounds containing halogen as ingredients in lubricant compositions
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- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant Compositions
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- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
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- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/64—Environmental friendly compositions
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Abstract
本申请公开了一种金刚线切割液、其制备方法与应用，以质量份计，切割液包括：10～30份的表面活性剂、10～20份的润湿剂、10～30份的渗透剂、0.5～5份的消泡剂和30～50份的超纯水。本申请的切割液中同时具有含碳氟链的表面活性剂和含碳氢链的表面活性剂，使得切割液具有更加优异的润湿性，有效减少硅片厚度不均以及切割过程的卡线问题；且上述的两种表面活性剂复配后还提高了切割液的缓蚀效果，有效减少切割过程的金刚线断线问题。本申请的切割液具有优异的切割能力，能够起到很好的防腐蚀效果，并有效保护金刚线，保证了切割质量与效率。
The present application discloses a diamond wire cutting fluid, its preparation method and application. The cutting fluid includes, by mass, 10 to 30 parts of a surfactant, 10 to 20 parts of a wetting agent, 10 to 30 parts of a penetrant, 0.5 to 5 parts of a defoaming agent and 30 to 50 parts of ultrapure water. The cutting fluid of the present application contains both a surfactant containing a carbon fluorine chain and a surfactant containing a hydrocarbon chain, so that the cutting fluid has more excellent wettability, effectively reducing the uneven thickness of silicon wafers and the problem of wire jamming during the cutting process; and the above two surfactants are compounded to improve the corrosion inhibition effect of the cutting fluid, effectively reducing the problem of diamond wire breakage during the cutting process. The cutting fluid of the present application has excellent cutting ability, can play a good anti-corrosion effect, and effectively protects the diamond wire, ensuring cutting quality and efficiency.
Description
Technical Field
The application belongs to the technical field of chip cutting, and particularly relates to a diamond wire cutting fluid, a preparation method and application thereof.
Background
The increase in diameter, the decrease in thickness and line width of silicon wafers, and the higher demands on the geometry of silicon wafers and their surface mechanical damage, lattice integrity, and thus the quality of the silicon wafer dicing process. The existing diamond wire cutting fluid can not completely meet the industrial production requirements, and the problems of scratches, wire breakage, corrosion and the like often occur in the cutting process.
Disclosure of Invention
The application provides a diamond wire cutting fluid, a preparation method and application thereof, and aims to solve the problems of broken wire, surface corrosion, scratch and the like of a diamond wire in the silicon wafer cutting process.
The technical scheme is that the diamond wire cutting fluid comprises, by mass, 10-30 parts of surfactant, 10-20 parts of wetting agent, 10-30 parts of penetrating agent, 0.5-5 parts of defoaming agent and 30-50 parts of ultrapure water;
the chemical formula of the first surfactant is F (CF 2)q(CH2)m(OCH2CH2)n OH, wherein q is an integer of 6-8, m is an integer of 1-3, n is an integer of 8-13;
The chemical formula of the second surfactant is C 10H21O(CH2CH2O)x H, wherein x is an integer of 9-13.
In some embodiments, the first surfactant has the formula F (CF 2)8(CH2)2(OCH2CH2)9 OH; the second surfactant has the formula C 10H21O(CH2CH2O)10 H.
In some embodiments, the mass ratio of the first surfactant to the second surfactant is 1 (9-20).
In some embodiments, the wetting agent is selected from at least one of the following compounds of formula (1), formula (2);
R 1O(CH2CH2O)a H, wherein R 1 is selected from C 9～C11 alkyl, a is an integer of 7-9;
The formula (2) is R 2O(CH2CH3CHO)b H, wherein R 2 is selected from C 8～C12 alkyl, and b is an integer of 8-9.
In some embodiments, the penetrant has a chemical formula of C 10H21O(CH2CH2O)c H, wherein C is an integer from 4 to 6.
In some embodiments, the defoamer is selected from at least one of mineral oil, fatty acid ester, fatty amide, polyether;
The fatty acid is at least one selected from octanoic acid, azelaic acid, decanoic acid and lauric acid, the fatty acid ester is at least one selected from lauric acid monoglyceride, acetic acid monoglyceride, lactic acid monoglyceride, diacetyl tartaric acid monoglyceride and succinic acid monoglyceride, the fatty acid amide is at least one selected from oleamide, erucamide, N- (4-hydroxyphenyl) stearic acid amide and fatty acid diethanolamide, and the polyether is at least one selected from polyoxyethylene ether, epoxypropyl end-capped polyether and propylene glycol block polyether.
In some embodiments, the defoamer consists of mineral oil and polyether, wherein the mass ratio of mineral oil to polyether is 1 (1-10).
In some embodiments, the cleaning composition comprises, by mass, 15-25 parts of a surfactant, 12-17 parts of a wetting agent, 15-25 parts of a penetrating agent, 1-3 parts of a defoaming agent, and 35-45 parts of ultrapure water.
In some embodiments, the application further provides a preparation method of the diamond wire cutting fluid, which comprises the following steps:
and respectively weighing and mixing the surfactant, the wetting agent, the penetrating agent and the defoaming agent in parts by mass, adding ultrapure water in corresponding parts by mass, and stirring to obtain the diamond wire cutting fluid.
In some embodiments, the application also provides an application of the diamond wire cutting fluid in cutting semiconductor silicon wafers.
Compared with the prior art, the cutting fluid has the advantages that the surfactant containing fluorocarbon chains and the surfactant containing hydrocarbon chains are arranged in the cutting fluid, so that the cutting fluid has more excellent wettability, the problems of uneven thickness of a silicon wafer and wire clamping in the cutting process are effectively reduced, the corrosion inhibition effect of the cutting fluid is improved after the two surfactants are compounded, and the problem of wire breakage of diamond wires in the cutting process is effectively reduced. The cutting fluid has excellent cutting capability, can play a good anti-corrosion effect, effectively protects diamond wires and ensures cutting quality and efficiency.
It can be appreciated that, compared with the prior art, the preparation method of the diamond wire cutting fluid and the application of the diamond wire cutting fluid provided by the embodiment of the application have all the technical characteristics and beneficial effects of the diamond wire cutting fluid, and are not described herein.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a graph showing the surface scratches of a silicon wafer after dicing with the dicing liquid of example 1;
FIG. 2 is a graph showing the surface scratches of a silicon wafer after the dicing of the dicing liquid of comparative example 1;
FIG. 3 is a graph showing edge chipping on the surface of a silicon wafer after dicing with the dicing solution of example 1;
FIG. 4 shows the edge breakage of the surface of a silicon wafer after the dicing of the dicing liquid of comparative example 1.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
In the description of the present application, unless explicitly stated or limited otherwise, the terms "connected" and "connected" should be interpreted broadly, for example, as being fixedly connected, detachably connected, or integrally connected, as being mechanically connected, electrically connected, or communicable with each other, as being directly connected, or indirectly connected through an intermediary, as being an internal connection between two elements, or as being an interaction relationship between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more features.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application.
Applicants have found that with the technological trends of large scale integrated circuits, the global electronics industry is rapidly developing, and the use of single crystal silicon and polysilicon is increasing. In addition, with the increasing use of renewable energy sources, the solar photovoltaic industry has rapidly developed as a new energy industry, and the solar industry requires a large amount of silicon materials, particularly polysilicon. The increase in diameter of the silicon wafer, the decrease in thickness and line width, and the higher demands on the geometric dimensions of the silicon wafer and its surface mechanical damage, lattice integrity, etc., have put higher demands on the quality of the silicon wafer dicing process. The quality of the cut of the silicon wafer will affect the processing efficiency of subsequent grinding, polishing and etching processes and even the final quality of the semiconductor device. However, some diamond wire cutting fluids used in production cannot completely meet the requirements of industrial production, and problems such as scratches, wire breakage, corrosion and the like often occur in the cutting process, so that development of the diamond wire cutting fluid with strong wettability and anti-corrosion effect is required.
Based on the problems, the embodiment of the application provides a diamond wire cutting fluid, which comprises, by mass, 10-30 parts of a surfactant, 10-20 parts of a wetting agent, 10-30 parts of a penetrating agent, 0.5-5 parts of an antifoaming agent and 30-50 parts of ultrapure water, wherein the surfactant comprises a first surfactant and a second surfactant, the chemical formula of the first surfactant is F (CF 2)q(CH2)m(OCH2CH2)n OH, wherein q is an integer of 6-8, m is an integer of 1-3, n is an integer of 8-13, and the chemical formula of the second surfactant is C 10H21O(CH2CH2O)x H, wherein x is an integer of 9-13.
It will be appreciated that the first surfactant has fluorocarbon chains therein, and the second surfactant has hydrocarbon chains therein, so that the first surfactant and the second surfactant may act synergistically to improve the application performance of the cutting fluid. The Van der Waals force between the fluorocarbon chain and the hydrocarbon chain is weaker than the interaction force between the two fluorocarbon chains or between the two hydrocarbon chains, so that the interaction force between the fluorocarbon chain and the hydrocarbon chain is generated, a hydrogenation-rich micelle and a fluorination-rich micelle are formed, the cutting fluid system is endowed with more excellent wettability, the problems of uneven thickness of a silicon wafer and wire clamping in the cutting process are effectively reduced, and in addition, when the first surfactant and the second surfactant are used together, the first surfactant and the second surfactant have hydrophilic groups and hydrophobic groups and can also serve as organic corrosion inhibitors, the corrosion inhibition effect of the cutting fluid is improved, and the problem of wire breakage of diamond wires in the cutting process is effectively reduced. In sum, by utilizing the combination of the first surfactant containing fluorocarbon chains and the second surfactant containing hydrocarbon chains, the wettability of the cutting fluid is improved, the effect of protecting diamond wires is also achieved, and the cutting quality and efficiency are ensured.
In some embodiments, the first surfactant is a fluorocarbon surfactant, such as anionic, cationic, zwitterionic, and nonionic fluorocarbon surfactants, preferably nonionic fluorocarbon surfactants, such as fluoroalkyl ethoxy ether alcohols. It will be appreciated that nonionic fluorocarbon surfactants do not ionize in aqueous solutions, and that their polar groups typically consist of a certain number of oxygen-containing ether linkages and/or hydroxyl groups. The length of the polar group can be adjusted, the change of the length of the polar group can change the hydrophilic-lipophilic balance value of the non-ionic fluorocarbon surfactant, but the hydrophilic-lipophilic balance value of the non-ionic fluorocarbon surfactant has great influence on the interface property of a system in which the non-ionic fluorocarbon surfactant is positioned and the stability of emulsion, so that the length of a polyoxyethylene substrate segment (-OCH 2CH2 -) directly influences the surface activity of the first surfactant, when n is an integer ranging from 8 to 13, the first surfactant has better stability, is not easy to be influenced by electrolyte and certain inorganic salts, has higher wettability and improves the uniformity of the thickness of a silicon wafer, and the compound structure ensures that the first surfactant has good foam performance and stability when q is an integer ranging from 6 to 8 and m is an integer ranging from 1 to 3, so that the foam formed by the foam is fine and stable, and the foam formed by the foam suppressor is convenient to be processed and eliminated.
In some embodiments, the preferred chemical formula of the first surfactant is F (CF 2)8(CH2)2(OCH2CH2)9 OH.
In some embodiments, the second surfactant also contains a polyoxyethylene substrate segment, and the length of the polyoxyethylene substrate segment is similar to that of the first surfactant, so that on one hand, the compatibility between the first surfactant and the second surfactant can be improved, meanwhile, the length of the polyoxyethylene substrate segment also directly influences the performance of the second surfactant, and when x is an integer of 9-13, the second surfactant can be guaranteed to have certain hydrophobicity, but the degreasing capability of the second surfactant is not reduced, and the cutting can be prevented from being influenced by excessive foam.
In some embodiments, the preferred chemical formula of the second surfactant is C 10H21O(CH2CH2O)10 H.
In some embodiments, the mass ratio of the first surfactant to the second surfactant is 1 (9-20). It can be understood that when the first surfactant and the second surfactant meet the mass ratio, the wettability of the cutting fluid is better, the torque generated during cutting is smaller, the breakage rate is lower, and the cutting effect is better. The mass ratio of the first surfactant to the second surfactant may be any one value or a range between any two values of 1:9, 1:10, 1:11, 1:12, 1:13, 1:14, 1:15, 1:16, 1:17, 1:18, 1:19 and 1:20. Further, the mass ratio of the first surfactant to the second surfactant is preferably 1 (10-15), and further, the mass ratio of the first surfactant to the second surfactant is more preferably 1:15.
In some embodiments, the wetting agent is selected from at least one of the following compounds of formula (1), formula (2);
R 1O(CH2CH2O)a H, wherein R 1 is selected from C 9～C11 alkyl, a is an integer of 7-9;
The formula (2) is R 2O(CH2CH3CHO)b H, wherein R 2 is selected from C 8～C12 alkyl, and b is an integer of 8-9.
Further, the wetting agent is narrow-distribution fatty alcohol polyoxyethylene ether and/or branched fatty alcohol polyoxypropylene ether, and contains ethylene oxide groups or propylene oxide groups, so that static surface tension and dynamic surface tension of the cutting fluid can be effectively reduced, meanwhile, emulsifying and wetting capabilities are improved, the stability of the cutting fluid is effectively improved, when a is an integer of 7-9 or b is an integer of 8-9, the wetting agent can enable the cutting fluid to wet the surface of a silicon wafer more quickly, a layer of compact protective film is formed, scratch lines on the silicon wafer is prevented, cutting force is guaranteed, and cutting yield is improved.
Further, in the formula (1), a may be 7, 8, 9, preferably 8, and b in the formula (2) may be 8 or 9, preferably 8.
In some embodiments, the osmotic agent has the formula C 10H21O(CH2CH2O)c H, where C is an integer from 4 to 6. The penetrating agent is narrow-distribution fatty alcohol polyoxyethylene ether, and when c is an integer of 4-6, the penetrating agent can penetrate residual silicon powder on the silicon wafer to enable the residual silicon powder to be uniformly dispersed, so that silicon powder generated after cutting is prevented from accumulating on the silicon wafer and agglomerating into blocks.
Further, in the chemical formula of the penetrating agent, c may be 4, 5, 6, preferably 4 or 5.
In some embodiments, the defoamer is selected from at least one of mineral oil, fatty acid ester, fatty amide, polyether. The defoamer can reduce the surface tension of water, solution, suspension and the like, prevent foam formation or reduce the original foam, and can achieve the effects of inhibiting the generation of foam and improving the cutting performance through the interaction of the defoamer and the surfactant.
In some embodiments, the fatty acid is selected from at least one of octanoic acid, azelaic acid, decanoic acid, lauric acid.
In some embodiments, the fatty acid ester is selected from at least one of monolaurate, monolactate, monoacetyltartrate, and monoluccinate.
In some embodiments, the fatty amide is selected from at least one of oleamide, erucamide, N- (4-hydroxyphenyl) stearamide, fatty acid diethanolamide.
In some embodiments, the polyether is selected from at least one of a polyoxyethylene ether, a polyether polyol, a propylene glycol block polyether.
In some embodiments, the defoamer consists of mineral oil and polyether, wherein the mass ratio of mineral oil to polyether is 1 (1-10). When the defoamer adopts mineral oil and polyether, the polyether section has a hydrophilic function, and the mineral oil section has a hydrophobic function, so that a better foam inhibition effect and a better defoaming effect can be achieved after the mineral oil section and the polyether section are combined. Wherein the mass ratio of the mineral oil to the polyether is preferably 1 (1-4), and the mass ratio of the mineral oil to the polyether is further preferably 1:3.
In some embodiments, the ultrapure water has little impurities, i.e., water that removes substantially all atoms except oxygen and hydrogen. The reason that ultrapure water is 18MΩ or more in resistance is that ultrapure water is used is to prevent corrosion of steel wires and silicon wafers caused by reaction of other elements in non-ultrapure water with components in cutting fluid due to local temperature rise in the cutting process and to avoid influence on pH and electric conduction after reaction.
In some embodiments, the composition of the diamond wire cutting fluid further comprises, by mass, 15-25 parts of a surfactant, 12-17 parts of a wetting agent, 15-25 parts of a penetrating agent, 1-3 parts of an antifoaming agent, and 35-45 parts of ultrapure water.
In some embodiments, a method for preparing a diamond wire cutting fluid is provided, comprising the steps of:
And respectively weighing and mixing the surfactant, the wetting agent, the penetrating agent and the defoaming agent in parts by mass, adding ultrapure water in corresponding parts by mass, stirring until all materials are completely dissolved, and obtaining the diamond wire cutting fluid in a uniform transparent state.
In some embodiments, the provided diamond wire cutting fluid can be used for cutting semiconductor silicon wafers, can be directly used in the silicon wafer cutting process, has no special requirements, has the advantages of safety, environmental protection, capability of realizing rapid and efficient silicon wafer cutting, extremely high wettability and defoaming performance, and simultaneously has a good corrosion inhibition effect, and can be applied to the field of photovoltaic silicon wafer cutting. The diamond wire cutting fluid has very good application prospect and large-scale industrialized popularization potential in the field of silicon wafer cutting.
It can be understood that the cutting fluid provided in this embodiment can be well used in the process of cutting silicon wafers by diamond wires, but in consideration of the differences of specific components, the cutting fluid in this embodiment is not fully suitable for other cutting processes, such as laser cutting, because the cutting action principle of different cutting processes is different, but the problems of wire breakage, corrosion, scratches and the like of diamond wires in the silicon wafer cutting process can be solved under the cooperation of different surfactants in the cutting fluid in this embodiment, and these problems cannot occur in other processes.
Example 1
Provided is a diamond wire cutting fluid comprising:
16 parts of surfactant, 15 parts of wetting agent, 20 parts of penetrating agent, 2 parts of defoamer and 40 parts of ultrapure water.
The surfactant comprises a first surfactant and a second surfactant, wherein the mass ratio of the first surfactant to the second surfactant is 1:15, the defoamer is mineral oil and epoxypropyl end-capped polyether, the mass ratio of the mineral oil to the epoxypropyl end-capped polyether is 1:3, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 1.
TABLE 1
| A first surfactant | F(CF2)8(CH2)2(OCH2CH2)9OH |
| A second surfactant | C10H21O(CH2CH2O)10H |
| Wetting agent | C10H21O(CH2CH2O)8H |
| Penetrant | C10H21O(CH2CH2O)5H |
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 2
Provided is a diamond wire cutting fluid comprising:
22 parts of surfactant, 10 parts of wetting agent, 30 parts of penetrating agent, 5 parts of defoamer and 30 parts of ultrapure water.
The surfactant comprises a first surfactant and a second surfactant, wherein the mass ratio of the first surfactant to the second surfactant is 1:10, the defoamer is mineral oil and epoxypropyl end-capped polyether, the mass ratio of the mineral oil to the epoxypropyl end-capped polyether is 1:1, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 2.
TABLE 2
| A first surfactant | F(CF2)8(CH2)2(OCH2CH2)9OH |
| A second surfactant | C10H21O(CH2CH2O)10H |
| Wetting agent | C10H21O(CH2CH2O)8H |
| Penetrant | C10H21O(CH2CH2O)5H |
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 3
Provided is a diamond wire cutting fluid comprising:
21 parts of surfactant, 20 parts of wetting agent, 15 parts of penetrating agent, 1 part of defoamer and 35 parts of ultrapure water.
The surfactant comprises a first surfactant and a second surfactant, wherein the mass ratio of the first surfactant to the second surfactant is 1:20, the defoamer is mineral oil and epoxypropyl end-capped polyether, the mass ratio of the mineral oil to the epoxypropyl end-capped polyether is 1:10, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 3.
TABLE 3 Table 3
| A first surfactant | F(CF2)8(CH2)2(OCH2CH2)9OH |
| A second surfactant | C10H21O(CH2CH2O)10H |
| Wetting agent | C10H21O(CH2CH2O)8H |
| Penetrant | C10H21O(CH2CH2O)5H |
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 4
Provided is a diamond wire cutting fluid comprising:
16 parts of surfactant, 12 parts of wetting agent, 10 parts of penetrating agent, 3 parts of defoamer and 45 parts of ultrapure water.
Wherein the surfactant comprises a first surfactant and a second surfactant, the mass ratio of the first surfactant to the second surfactant is 1:15, the defoaming agent is lauric acid, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 4.
TABLE 4 Table 4
| A first surfactant | F(CF2)6(CH2)(OCH2CH2)8OH |
| A second surfactant | C10H21O(CH2CH2O)9H |
| Wetting agent | C9H19O(CH2CH2O)7H |
| Penetrant | C10H21O(CH2CH2O)4H |
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 5
Provided is a diamond wire cutting fluid comprising:
15 parts of surfactant, 17 parts of wetting agent, 25 parts of penetrating agent, 0.5 part of defoamer and 50 parts of ultrapure water.
The surfactant comprises a first surfactant and a second surfactant, the mass ratio of the first surfactant to the second surfactant is 1:14, the defoaming agent is monoglyceride laurate, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 5.
TABLE 5
| A first surfactant | F(CF2)7(CH2)3(OCH2CH2)13OH |
| A second surfactant | C10H21O(CH2CH2O)13H |
| Wetting agent | C11H23O(CH2CH2O)9H |
| Penetrant | C10H21O(CH2CH2O)6H |
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 6
Provided is a diamond wire cutting fluid comprising:
30 parts of surfactant, 15 parts of wetting agent, 20 parts of penetrating agent, 4 parts of defoamer and 40 parts of ultrapure water.
Wherein the surfactant comprises a first surfactant and a second surfactant, the mass ratio of the first surfactant to the second surfactant is 1:9, the defoaming agent is oleamide, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 6.
TABLE 6
| A first surfactant | F(CF2)8(CH2)3(OCH2CH2)10OH |
| A second surfactant | C10H21O(CH2CH2O)10H |
| Wetting agent | C10H21O(CH2CH2O)9H |
| Penetrant | C10H21O(CH2CH2O)5H |
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 7
Provided is a diamond wire cutting fluid comprising:
10 parts of surfactant, 18 parts of wetting agent, 25 parts of penetrating agent, 2 parts of defoamer and 35 parts of ultrapure water.
The surfactant comprises a first surfactant and a second surfactant, wherein the mass ratio of the first surfactant to the second surfactant is 1:9, the defoaming agent is mineral oil and polyoxyethylene ether, the mass ratio of the mineral oil to the polyoxyethylene ether is 1:3, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 7.
TABLE 7
| A first surfactant | F(CF2)8(CH2)2(OCH2CH2)9OH |
| A second surfactant | C10H21O(CH2CH2O)10H |
| Wetting agent | C10H21O(CH2CH3CHO)8H |
| Penetrant | C10H21O(CH2CH2O)5H |
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 8
Provided is a diamond wire cutting fluid comprising:
20 parts of surfactant, 14 parts of wetting agent, 15 parts of penetrating agent, 3 parts of defoamer and 50 parts of ultrapure water.
The surfactant comprises a first surfactant and a second surfactant, wherein the mass ratio of the first surfactant to the second surfactant is 1:19, the defoamer is mineral oil and propylene glycol block polyether, the mass ratio of the mineral oil to the propylene glycol block polyether is 1:3, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 8.
TABLE 8
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 9
Provided is a diamond wire cutting fluid comprising:
11 parts of surfactant, 16 parts of wetting agent, 25 parts of penetrating agent, 1 part of defoamer and 45 parts of ultrapure water.
The surfactant comprises a first surfactant and a second surfactant, wherein the mass ratio of the first surfactant to the second surfactant is 1:10, the defoamer is mineral oil and polyoxyethylene ether, the mass ratio of the mineral oil to the polyoxyethylene ether is 1:3, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 9.
TABLE 9
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Example 10
Provided is a diamond wire cutting fluid comprising:
25 parts of surfactant, 11 parts of wetting agent, 15 parts of penetrating agent, 2.5 parts of defoamer and 35 parts of ultrapure water.
The surfactant comprises a first surfactant and a second surfactant, wherein the mass ratio of the first surfactant to the second surfactant is 1:12, the defoamer is mineral oil and propylene glycol block polyether, the mass ratio of the mineral oil to the propylene glycol block polyether is 1:9, and the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrating agent are shown in the following table 10.
Table 10
The preparation process includes weighing the components separately, adding all the components except ultrapure water into container, stirring while injecting ultrapure water, stirring until all the materials are dissolved completely, and obtaining the diamond wire cutting liquid.
Comparative example 1
A cutting fluid was provided, the specific composition of which was similar to that of example 1, except that in comparative example 1, the first surfactant F (CF 2)8(CH2)2(OCH2CH2)9 OH) of example 1 was not added.
Comparative example 2
A cutting fluid was provided, the specific composition of which was similar to that of example 1, except that in comparative example 2, the second surfactant C 10H21O(CH2CH2O)10 H of example 1 was not added.
Comparative example 3
A cutting fluid was provided, the specific composition of which was similar to that of example 1, except that the wetting agent of example 1 was not added in comparative example 3.
Comparative example 4
A cutting fluid was provided, the specific composition of which was similar to that of example 1, except that the penetrant of example 1 was not added in comparative example 4.
Comparative example 5
A cutting fluid was provided, the specific composition of which was similar to that of example 1, except that the antifoaming agent of example 1 was not added in comparative example 5.
Comparative example 6
A cutting fluid was provided, the specific composition of which was similar to that of example 1, except that the surfactant in comparative example 6 was a perfluorinated surfactant C 6F5(OCH2CH2)10 OH.
The cutting fluids of examples 1 to 10 and comparative examples 1 to 6 were used for cutting silicon wafers, and the cutting rate of the diamond wire, the scratch and chipping conditions of the cut silicon wafers, and the torque were compared during the cutting process, respectively, and the specific results are shown in table 11. The torque testing process is that when the fastener is fixed again, the torque spanner and the power tool can apply dynamic torque, the dynamic torque can not be measured after the fastener is fastened, and the torque value obtained by online measurement is carried out when the dynamic torque is loaded.
TABLE 11
As shown in Table 11, the average breakage rate of the cutting fluids of examples 1 to 10 was 12.10%, the breakage rate of comparative example 1 was 23.56%, and the breakage rate of comparative example 1 was greater than the average breakage rate of examples 1 to 10, indicating that the breakage rate of the diamond wire was reduced after the addition of the first surfactant having fluorocarbon chains, the first surfactant having fluorocarbon chains had a good corrosion preventing effect, and the cutting fluids of examples 1 to 10 had a high wettability, which effectively protected the diamond wire. In addition, the average edge breakage rate of examples 1 to 10 is 1.06%, the average edge breakage rate of comparative examples 1 to 6 is 2.15%, and the average edge breakage rate of examples 1 to 10 is smaller than that of comparative examples 1 to 6, which shows that the edge breakage and scratch phenomena on the cut silicon wafer can be obviously reduced by compounding the first surfactant and the second surfactant and combining the wetting agent, the penetrating agent and the defoaming agent after the cutting fluid of the embodiment is adopted.
The torque of examples 1-10 is obviously smaller than that of comparative examples 1-6, which shows that after the first surfactant and the second surfactant are compounded, the corrosion inhibition effect is enhanced, the wire breakage problem of the diamond wire in the cutting process is effectively reduced, and the cutting quality and efficiency are ensured.
Referring further to FIGS. 1-2, the surface of the silicon wafer is less scratched after the cutting fluid of example 1 is used in FIG. 1, and a plurality of scratches appear on the surface of the silicon wafer after the cutting fluid of comparative example 1 is used in FIG. 2, and further referring to FIGS. 3-4, the surface of the silicon wafer is free from edge breakage phenomenon after the cutting fluid of example 1 is used in FIG. 3, and the edge breakage phenomenon appears after the cutting fluid of comparative example 1 is used in FIG. 4, which shows that after the first surfactant containing fluorocarbon chains is added, the wettability can be further improved, the surface scratches of the silicon wafer can be improved, and the occurrence of the edge breakage phenomenon can be reduced.
Further comparing the data of example 1 with comparative example 6, the performance of example 1 is significantly better than comparative example 6 because the perfluoro surfactant is used in comparative example 6, the perfluoro surfactant has poor surface active compatibility with other carbon-hydrogen bonds, and the perfluoro surfactant is difficult to degrade and causes environmental pollution.
The diamond wire cutting fluid provided by the application has no special requirements on the process of cutting the silicon wafer by the diamond wire, no special treatment flow, environment-friendly cutting fluid, no pollution and small volatilization loss, and after the cutting process is finished, the silicon wafer is only washed by pure water, so that the silicon wafer has no harm to the environment and human body. The diamond wire cutting fluid provided by the application has very good application prospect and large-scale industrialized popularization potential in the field of silicon wafer cutting.
The application is characterized in that the application is provided with a diamond wire cutting fluid, a preparation method and application thereof, the application is provided with a specific example for illustrating the principle and implementation mode of the application, the description of the above examples is only used for helping to understand the technical scheme and core idea of the application, and a person skilled in the art should understand that the technical scheme described in the foregoing examples can be modified or some technical features of the technical scheme can be replaced equally, and the modification or replacement does not make the essence of the corresponding technical scheme deviate from the scope of the technical scheme of the embodiments of the application.
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| CN103525532A (en) * | 2013-10-18 | 2014-01-22 | 山东昊达化学有限公司 | Emery line cutting liquid and preparation method thereof |
| CN107201262A (en) * | 2016-11-23 | 2017-09-26 | 阜宁协鑫光伏科技有限公司 | A kind of cutting liquid for reducing diamond wire cutting broken string |
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| ITMI20051155A1 (en) * | 2005-06-20 | 2006-12-21 | Maflon S R L | NEW FLUORURED COMPOUNDS, THEIR SYNTHESIS AND USE. |
| DE102006031151A1 (en) * | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | fluorosurfactants |
| WO2016124579A1 (en) * | 2015-02-06 | 2016-08-11 | Solvay Specialty Polymers Italy S.P.A. | (per)fluoropolyether polymers as antifoam agents |
| CN113549488B (en) * | 2021-08-03 | 2022-10-25 | 江苏捷捷半导体新材料有限公司 | Large-size silicon wafer diamond wire cutting liquid |
| CN113913237B (en) * | 2021-11-12 | 2022-06-17 | 大连奥首科技有限公司 | A kind of solar silicon wafer diamond wire cutting liquid, its preparation method and use |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103525532A (en) * | 2013-10-18 | 2014-01-22 | 山东昊达化学有限公司 | Emery line cutting liquid and preparation method thereof |
| CN107201262A (en) * | 2016-11-23 | 2017-09-26 | 阜宁协鑫光伏科技有限公司 | A kind of cutting liquid for reducing diamond wire cutting broken string |
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