CN116810619B - Microwave-assisted chemical mechanical polishing device and method for polishing CaF2 wafer using the same - Google Patents
Microwave-assisted chemical mechanical polishing device and method for polishing CaF2 wafer using the same Download PDFInfo
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- CN116810619B CN116810619B CN202310997286.4A CN202310997286A CN116810619B CN 116810619 B CN116810619 B CN 116810619B CN 202310997286 A CN202310997286 A CN 202310997286A CN 116810619 B CN116810619 B CN 116810619B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
基于微波协助的化学机械抛光装置及利用其抛光CaF2晶片的方法，它涉及抛光装置及抛光方法。它是要解决现有的CaF2光学元件的抛光方法易对晶体表面造成褶皱、划痕、碎裂且抛光效率低的技术问题。本装置包括抛光机、抛光垫、微波发生器、抛光工具、配重块和抛光液容器；抛光垫设置在抛光机的旋转平台上表面；微波发生器设置在旋转平台的下方。抛光方法：一、将待抛光的晶片固定在抛光工具头下侧，将羊毛毡抛光垫置于旋转平台上，滴加金刚砂悬浮液打磨；二、用沥青抛光盘先抛光，再开启微波发生器继续抛光，最后滴加水溶性SiO2胶体继续抛光，得到精抛晶片；三、清洗、吹干。精抛CaF2晶片的粗糙度Ra小于2nm，可用于光学领域。
A microwave-assisted chemical mechanical polishing device and a method for polishing CaF 2 wafers using the same, which relate to a polishing device and a polishing method. It is to solve the technical problem that the existing polishing method of CaF 2 optical elements is easy to cause wrinkles, scratches, and fragments on the crystal surface and has low polishing efficiency. The device includes a polishing machine, a polishing pad, a microwave generator, a polishing tool, a counterweight and a polishing fluid container; the polishing pad is arranged on the upper surface of the rotating platform of the polishing machine; and the microwave generator is arranged below the rotating platform. Polishing method: 1. Fix the wafer to be polished on the underside of the polishing tool head, place the wool felt polishing pad on the rotating platform, add emery suspension drops for polishing; 2. Polish with an asphalt polishing disc first, and then turn on the microwave generator Continue polishing, and finally drop water-soluble SiO 2 colloid to continue polishing to obtain a finely polished wafer; 3. Clean and blow dry. The roughness Ra of finely polished CaF 2 wafers is less than 2nm and can be used in the optical field.
Description
Technical Field
The present invention relates to a polishing apparatus and a method of polishing a wafer.
Background
CaF 2 Is an important light functional material, has a wider light transmission range (125-10000 nm), and can cover a wider spectrum range from far ultraviolet to middle infrared; the transmittance is high, the transmittance in the ultraviolet band can reach more than 90 percent, and the ultraviolet band has incomparable transmittance performance of other materials, and the CaF is treated by a special processing technology 2 The internal transmittance of the crystal can reach 99.8 percent; low refractive index, refractive index of 1.438-1.300 in the light transmission range of 125-10000, which leads to CaF 2 The method is successfully applied to the preparation of the antireflection film. In addition to that, caF 2 Also has the characteristics of excellent thermo-optic supplementation, higher laser damage resistance threshold, good achromatism and apochromatic capacity and the like. In ultraviolet optical systems, high energy lasers place high demands on the laser damage threshold and transmission performance of the optical element. Thus, caF 2 Becomes the most ideal material in the ultraviolet optical system. However, caF 2 Because of the characteristics of low hardness, high brittleness, low thermal conductivity and the like, surface or subsurface defects such as scratches, cracks and the like are easy to appear on the surface in the process of technological processing, and the integrity of the crystal surface is damaged.
To obtain CaF with smooth surface 2 The optical element generally adopts the traditional means of mechanical polishing, single-point diamond turning, chemical mechanical polishing and the like to carry out CaF 2 The crystal element is processed. CaF is subjected to conventional mechanical polishing 2 When the surface is processed, the mechanical property of the surface of the material changes along with the change of crystal phase, and the surface of the crystal has sector folds; caF can also be achieved by adopting single-point diamond polishing technology 2 The surface of the crystal is scratched, cracked and other damages; chemical mechanical polishing requires a long polishing time due to low polishing efficiency, so that abrasive grains are embeddedThe crystal surface affects the integrity of the crystal surface. These polishing techniques all have certain drawbacks in order to obtain CaF with smoother surfaces 2 Crystalline components, there is a need for further improvements in current polishing techniques.
Disclosure of Invention
The invention aims to solve the problems of the existing CaF 2 The polishing method of the optical element is easy to solve CaF 2 The technical problems of wrinkling, scratching, chipping and low polishing efficiency caused by the surface of the crystal are solved, and a chemical mechanical polishing device based on microwave assistance and a CaF polishing device using the same are provided 2 A method of wafer.
The chemical mechanical polishing device based on microwave assistance comprises a polishing machine 1, a polishing pad 2, a microwave generator 3, a polishing tool 4, a balancing weight 5 and a polishing liquid container 6;
wherein the polishing machine 1 consists of a rotary platform 1-1 and a driving motor 1-2; the polishing pad 2 is arranged on the upper surface of the rotary platform 1-1; the microwave generator 3 is arranged below the rotary platform 1-1;
the polishing tool 4 consists of a polishing tool head 4-1 and a control motor 4-2; the balancing weight 5 is arranged on the polishing tool head 4-1; for CaF fixed to the underside of the polishing tool head 4-1 2 Applying pressure to the wafer;
an outflow pipe and a control valve 6-1 are arranged at the lower part of the polishing solution container 6;
the polishing pads 2 are two kinds, namely wool felt polishing pads and asphalt polishing discs with grid disc surfaces.
Polishing CaF using the microwave-assisted chemical mechanical polishing apparatus described above 2 The method for manufacturing the wafer comprises the following steps:
1. CaF to be polished 2 The wafer is fixed on the lower side of the polishing tool head 4-1, the wool felt polishing pad is arranged on the rotary platform 1-1 of the polishing machine 1, the rotating speed of the rotary platform 1-1 is adjusted to 50-120 rpm, the rotating speed of the polishing tool head 4-1 is adjusted to 45-85 rpm, and the weight of the balancing weight 5 is adjusted to control the weight pressure to be 50-100 g/cm 2 Starting a polishing machine 1 and a polishing tool 4, dropwise adding a carborundum suspension, and polishing until the surface of the crystal element has uniform color and no macroscopic scratches; by ultrapureWater will CaF 2 Cleaning the wafer;
2. replacing wool felt polishing pad with an asphalt polishing disk with a grid-shaped disk surface, adjusting the rotating speed of the rotary platform 1-1 to 35-60 rpm, adjusting the rotating speed of the polishing tool head 4-1 to 50-70 rpm, and adjusting the weight of the balancing weight 5 to control the balancing weight pressure to 50-100 g/cm 2 Starting a polishing machine 1 and a polishing tool 4 to polish for 30-50 min, then starting a microwave generator 3, and continuing polishing for 30-50 min under the condition that the output power of microwaves is 5-10W; and then water-soluble SiO is added 2 Drop-wise addition of colloid to rotating CaF 2 Continuously polishing the surface of the wafer for 30-50 min to obtain the finish polished CaF 2 A wafer;
3. finely polishing CaF 2 Cleaning the wafer, soaking the wafer in isopropanol for 12-18 s, and finally drying the wafer along the surface by using high-purity helium gas at the temperature of 40-50 ℃ to finish CaF 2 And polishing the wafer.
Further, the step one of dropping the carborundum suspension for polishing, specifically, dropping the carborundum suspension with the particle size of 110-160 nm into the rotating CaF 2 Coarsely grinding the surface of the wafer for 10-15 min; then dripping the carborundum suspension with the particle diameter of 60-80 nm into the rotating CaF 2 Coarsely grinding the surface of the wafer for 10-20 min; finally, the carborundum suspension with the grain diameter of 35-45 nm is dripped into the rotating CaF 2 The wafer surface is ground to a uniform surface color of the crystal element, and no scratches are recognized by naked eyes.
Further, the water-soluble SiO described in step two 2 The particle size of the colloid is 120-140 nm.
Further, the step three is a fine polishing of CaF 2 Wafer cleaning, in particular fine polishing CaF 2 Cleaning the wafer by petroleum ether and alcohol in sequence; then the mixture is soaked for 10 to 20 seconds by using grinding and polishing cleaning agent, and is cleaned by using ultrapure water.
According to the invention, through microwave-assisted chemical mechanical polishing, when microwaves penetrate into a polishing interface, as microwave energy and polishing liquid medium have certain interaction, the medium generates strong vibration, and the vibration can accelerate the acceleration and emulsification of the polishing liquid, so that the liquid is promotedReaction between the medium and the processing element. In addition to this, the vibration of the medium causes the molecules to rub against each other, causing the temperature of the medium to start to rise. In addition, the microwave is used for heating the medium material instantaneously, the heating speed is high, the output power of the microwave is adjustable, the medium can also respond quickly, the temperature is changed along with the medium, the phenomenon of waste heat is avoided, and the automatic control and the continuous production are greatly facilitated. In the polishing process of the invention, because water molecules belong to polar molecules, the dielectric constant is larger, and the dielectric loss factor is also higher than CaF 2 The wafer is much larger so the slurry is first heated up rapidly by microwaves. Meanwhile, the microwave is also used as a cleaning technology, and can remove the residual pollutant impurities and defects on the surface of the material, such as polishing powder particles, chemical reaction products and the like. CaF obtained by the method of the invention 2 The roughness Ra of the wafer is smaller than 2nm, so that the crystal element can be polished efficiently to obtain an ultra-smooth surface.
The invention can be used in the field of optical functional material processing.
Drawings
FIG. 1 is a schematic view of a microwave-assisted chemical mechanical polishing apparatus according to the present invention; in the figure, 1 is a polishing machine, 1-1 is a rotating platform, 1-2 is a driving motor, 2 is a polishing pad, 3 is a microwave generator, 4 is a polishing tool, 4-1 is a polishing tool head, 4-2 is a control motor, 5 is a balancing weight, 6 is a polishing liquid container, and 6-1 is a control valve;
FIG. 2 is a CaF to be polished in step one of example 1 2 XRD spectrum of the wafer;
FIG. 3 is a CaF to be polished in step one of example 1 2 Scanning electron microscope pictures of wafers;
FIG. 4 is a CaF obtained in step two of example 1 2 Scanning electron microscope pictures of wafers;
FIG. 5 is a CaF obtained in step three of example 1 2 Scanning electron microscope pictures of wafers;
FIG. 6 is a CaF obtained in step five of example 1 2 Scanning electron microscope pictures of wafers;
FIG. 7 is a CaF obtained in step five of example 1 2 Atomic force of waferTesting the photo;
FIG. 8 is a CaF obtained in example 2 2 Scanning electron microscope pictures of wafers;
FIG. 9 is a CaF obtained in example 2 2 Atomic force test photographs of wafers.
Detailed Description
Example 1: the chemical mechanical polishing device based on microwave assistance of the embodiment consists of a polishing machine 1, a polishing pad 2, a microwave generator 3, a polishing tool 4, a balancing weight 5 and a polishing liquid container 6; wherein the polishing machine 1 consists of a rotary platform 1-1 and a driving motor 1-2; the polishing pad 2 is arranged on the upper surface of the rotary platform 1-1; the microwave generator 3 is arranged below the rotary platform 1-1; the polishing tool 4 consists of a polishing tool head 4-1 and a control motor 4-2; the balancing weight 5 is arranged on the polishing tool head 4-1; for CaF fixed to the underside of the polishing tool head 4-1 2 Applying pressure to the wafer; an outflow pipe and a control valve 6-1 are arranged at the lower part of the polishing solution container 6; the polishing pads 2 are two kinds, namely wool felt polishing pads and asphalt polishing discs with grid disc surfaces.
Polishing of CaF Using microwave-assisted chemical mechanical polishing apparatus of example 1 2 The method for manufacturing the wafer comprises the following steps:
1. CaF to be polished 2 The XRD spectrum of the wafer is shown in FIG. 2, and it can be seen from FIG. 2 that the wafer is CaF 2 Single crystal, caF to be polished 2 The scanning electron microscope photograph of the wafer is shown in FIG. 3, and it can be seen from FIG. 3 that CaF is present before polishing 2 The surface of the wafer is uneven; caF to be polished with a diameter of 22mm and a thickness of 4mm 2 The wafer is fixed on the lower side of the polishing tool head 4-1, the wool felt polishing pad is placed on the rotary platform 1-1 of the polishing machine 1, the rotating speed of the rotary platform 1-1 is adjusted to 60rpm, the rotating speed of the polishing tool head 4-1 is adjusted to 65rpm, and the weight of the balancing weight 5 is adjusted to control the weight pressure to be 50g/cm 2 Starting the polishing machine 1 and the polishing tool 4 for polishing; firstly, 8 drops of carborundum suspension with the grain diameter of 130nm are dripped into a rotating CaF 2 Coarsely grinding the surface of the wafer for 15min; then 8 drops of carborundum suspension with the grain diameter of 60nm are dripped into the rotating CaF 2 Coarsely grinding the surface of the wafer for 15min; finally 8 drops ofCarborundum suspension with particle size of 40nm is added dropwise to rotating CaF 2 Grinding the surface of the wafer until the surface of the crystal element has uniform color and luster and no scratch distinguished by naked eyes; caF with ultra pure water 2 Cleaning the wafer; washing the wool felt polishing pad and the rotary platform 1-1 with ultrapure water;
2. replacing wool felt polishing pad with an asphalt polishing disk with grid-shaped disk surface, adjusting the rotating speed of the rotary platform 1-1 to 45rpm, adjusting the rotating speed of the polishing tool head 4-1 to 50rpm, and adjusting the weight of the balancing weight 5 to control the balancing weight pressure to 50g/cm 2 Starting the polishing machine 1 and the polishing tool 4 to polish for 40min; caF obtained at this time 2 The microscopic morphology of the wafer is shown in fig. 4, and it can be seen from fig. 4 that the wafer surface becomes smoother after the mechanical polishing process, but a small number of bumps and scratches can still be seen, indicating that further processing is required to reduce the wafer roughness and improve the wafer surface quality; starting the microwave generator 3, and continuously polishing for 40min under the condition that the output power of the microwaves is 5W; caF obtained at this time 2 The microscopic morphology of the wafer is shown in fig. 5, and as can be seen from fig. 5, the wafer surface is smoother, because polishing is carried out under the assistance of microwaves, extra energy is provided for the polishing solution, so that particles in the polishing solution provide higher kinetic energy to accelerate the action of the polishing solution and the wafer surface, the speed of generating a modified layer on the wafer surface is accelerated, the polishing time can be shortened, the polishing quality can be improved, and the polishing efficiency can be improved due to the influence of microwaves, the dissolution and emulsification of liquid can be accelerated by vibration among molecules of the polishing solution, the reaction between a liquid medium and a processing element is promoted, and the polishing efficiency is improved; finally, 3 drops of water-soluble SiO with the colloid particle size of 130nm 2 Drop-wise addition of colloid to rotating CaF 2 Polishing the surface of the wafer for 35min to obtain the polished CaF 2 A wafer;
3. finely polishing CaF 2 Immersing the wafer in 15mL of petroleum ether, ultrasonically cleaning for 5min, removing residual polishing solution, and cleaning the residual petroleum ether with 15mL of deionized water for 4 times; then CaF is carried out 2 Immersing the wafer in 13mL of alcohol, and ultrasonically cleaning for 40s to remove organic pollutants; then CaF is carried out 2 Soaking the wafer in a fire containing 200mL of grinding and polishing cleaning agentSoaking in the cup for 15s to remove grinding powder, polishing powder, dirt and fingerprints, taking out, and cleaning with ultrasonic for 2min; finally CaF is arranged 2 Soaking the wafer in isopropanol for 15s, drying with 45 deg.C high purity helium along the surface to finish CaF 2 And polishing the wafer. The CaF obtained 2 A physical photograph of the wafer is shown in fig. 6. CaF (CaF) 2 The atomic force test photograph of the wafer is shown in fig. 7, and the atomic force test results are shown in table 1.
TABLE 1 atomic force test results
As shown by atomic force test results, after microwave-assisted chemical mechanical polishing, the surface roughness of the wafer reaches 1.95nm, which fully proves that the polishing technology effectively improves CaF 2 The polishing quality of the wafer is very low, and the precision polishing effect is achieved.
Example 2: the difference between this example and example 1 is that the polishing was performed for 40min under the condition that the output power of the microwave in the second step was 10W; other steps and parameters were the same as in example 1. The resulting polished CaF 2 As shown in FIG. 8, the scanning electron micrograph of the wafer is shown, and as can be seen from FIG. 8, caF 2 The microscopic scale of the wafer is smooth, which is beneficial to obtaining products with low surface roughness. The CaF 2 An atomic force photograph of the wafer is shown in fig. 9, and atomic force test data thereof are shown in table 2.
TABLE 2 atomic force test data
| Basic parameters | Test value | Secondary parameter | Test value |
| Average value of | 25.54nm | Minimum value of | 0.00nm |
| Surface roughness | 2.204nm | Maximum value of | 30.82nm |
| Average particle size | 2.204nm | Intermediate value | 25.96nm |
| Average surface roughness | 1.469nm | Maximum peak height | 5.28nm |
| Degree of deviation | -2.583 | Maximum pit depth | 25.54nm |
| Kurtosis of excess value | 12.10 | Maximum total height | 30.82nm |
Claims (4)
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