CN116723738A

CN116723738A - Display device

Info

Publication number: CN116723738A
Application number: CN202310931252.5A
Authority: CN
Inventors: 丁景隆; 毛立维; 胡顺源
Original assignee: Innolux Display Corp
Current assignee: Innolux Corp
Priority date: 2018-10-03
Filing date: 2019-05-17
Publication date: 2023-09-08
Also published as: KR20200038853A; CN110993638A; CN110993638B; US20240250199A1; KR102744494B1

Abstract

Some embodiments of the application provide a display device. The display device comprises at least one sensor, a supporting substrate and a display panel. The support substrate is arranged on the at least one sensor and comprises an open mouth. The display panel weight is the supporting substrate and comprises a substrate and a plurality of light emitting units, wherein one of the at least one sensor has a focal length which is larger than a distance between the one of the at least one sensor and the display panel, the substrate of the display panel is provided with a first surface and a second surface opposite to the first surface, the plurality of light emitting units are arranged on the first surface, the at least one sensor is arranged on the second surface, and the opening of the supporting substrate at least exposes a part of the at least one sensor.

Description

Display device

The application is a divisional application of the application with the application number of 201910410058.6, the application date of 2019, 5 month and 17 days and the name of display device.

Technical Field

The present application relates to a display device, and more particularly, to a display device including an image sensor.

Background

With the development of digital technology, display devices have been widely used in various levels of daily life, and the display devices are continuously developed toward light, thin, short, or fashionable.

However, there is room for improvement in the conventional display devices, and thus, a new display device is required.

Disclosure of Invention

Some embodiments of the application provide a display device. The display device comprises a display panel, wherein the display panel comprises a display area. The display device comprises at least one image sensor, and the image sensor is overlapped with the display area. The image sensor comprises a photosensitive element and a light receiving element arranged on the photosensitive element.

Other embodiments of the present application provide a display device. The display device comprises a display panel, wherein the display panel comprises a display area. The display device comprises at least one sensor, and the sensor is overlapped with the display area.

Drawings

In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below, wherein:

fig. 1 is a schematic cross-sectional view of a display device according to some embodiments of the application.

Fig. 2 is a schematic cross-sectional view of an image sensor according to some embodiments of the application.

Fig. 3 is a top view of a display device according to some embodiments of the application.

Fig. 4 is a schematic cross-sectional view of a display device according to some embodiments of the application.

Fig. 5 is a schematic cross-sectional view of a display device according to some embodiments of the application.

Fig. 6 is a schematic cross-sectional view of a display device according to some embodiments of the application.

Fig. 7A is a top view of a display device according to some embodiments of the application.

Fig. 7B is a schematic cross-sectional view of the display device shown in fig. 7A according to some embodiments of the application.

Fig. 8 is a schematic cross-sectional view of a display device according to some embodiments of the application.

Fig. 9 is a schematic cross-sectional view of a display device according to some embodiments of the application.

Fig. 10A and 10B are schematic diagrams illustrating interactions between a display device and an object according to some embodiments of the application.

The reference numerals of the elements in the drawings illustrate:

100 display device

102 display panel

100A display area

100B non-display area

110 substrate

110' substrate

111 light receiving area

112 opening

120 luminous unit

121 sub-pixel

122 mold sealing material

130 sensor

131 support element

132 photosensitive element

133 light receiving element

140 low light transmission layer

141 opening

150 support substrate

160 substrate

161 substrate extension

162 opening 162

200 display device

300 display device

400 display device

500 display device

600 display device

D1 distance

D2 focal length

L ray

S1 surface

S2 surface

X object

Y object

Detailed Description

The following describes an element substrate, a light-emitting device, and a method for manufacturing the light-emitting device according to some embodiments of the present application in detail. It is to be understood that the following description provides many different embodiments, or examples, for implementing different aspects of some embodiments of the application. The particular elements and arrangements described below are only briefly described for clarity of description of some embodiments of the application. These are, of course, merely examples and are not intended to be limiting. Furthermore, repeated reference numerals or designations may be used in the various embodiments. These repetition are for the purpose of simplicity and clarity in connection with the description of some embodiments of the application and do not in itself represent any relationship between the various embodiments and/or configurations discussed. Furthermore, when a first material layer is described as being on or over a second material layer, this includes situations where the first material layer is in direct contact with the second material layer. Alternatively, one or more other material layers may be spaced apart, in which case there may not be direct contact between the first material layer and the second material layer.

The terms "about", "approximately" and "approximately" herein generally mean within 20%, preferably within 10%, and more preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The amounts given herein are about amounts, i.e., where "about", "about" or "approximately" is not specifically recited, the meaning of "about", "about" or "approximately" may still be implied.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, and/or sections, these elements, components, regions, layers, and/or sections should not be limited by these terms, and these terms are used solely to distinguish between different elements, components, regions, layers, and/or sections. Thus, a first element, component, region, layer, and/or section discussed below could be termed a second element, component, region, layer, and/or section without departing from the teachings of some embodiments of the present application.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. It will be appreciated that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present application and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Some embodiments of the application may be understood together with the accompanying drawings, which are incorporated in and constitute a part of this specification. It should be understood that the drawings of embodiments of the present application are not drawn to scale from actual devices and components. The shapes and thicknesses of the embodiments may be exaggerated in the drawings in order to clearly show the features of the embodiments of the present application. Furthermore, the structures and devices are schematically depicted in the drawings in order to clearly demonstrate the features of the embodiments of the present application.

In some embodiments of the application, relative terms such as "lower," "upper," "horizontal," "vertical," "below," "over," "top," "bottom," and the like are to be construed as referring to the orientation depicted in this paragraph and the associated drawings. This relative term is for convenience of description only and is not intended to represent that the device described is manufactured or operated in a particular orientation. In contrast, terms such as "connected," "interconnected," and the like, refer to two structures as being in direct contact, or to two structures as not being in direct contact, unless otherwise specified, wherein other structures are provided between the two structures. And the term coupled, connected, may also include situations where both structures are movable, or where both structures are fixed.

It should be noted that the term "substrate" or "panel" hereinafter may include elements already formed on a transparent substrate and various film layers covering the base, over which any desired plurality of active elements (transistor elements) may be formed, but is merely represented as a flat substrate for simplicity of drawing.

Referring to fig. 1, fig. 1 is a schematic cross-sectional view of a display device 100 according to some embodiments of the application. The display device 100 may include a modern information device such as a television, a notebook, a computer, a mobile phone, a smart phone, a public information display (Public Information Display), a touch display, or a tiled display. As shown in fig. 1, the display device 100 includes a display panel 102. The display panel 102 may include a substrate 110 and a light emitting unit 120. The substrate 110 may comprise a flexible or non-flexible substrate. For example, but not limited to, a glass substrate, a polymer substrate, a ceramic substrate, a sapphire substrate, a circuit board, a resin substrate, other suitable substrates, or a combination of the above. In some embodiments, the substrate 110 may be a single-layer or multi-layer structure. The substrate 110 may include a plurality of active devices (not shown), or active driving circuits (not shown), such as thin film transistors. The thin film transistor may include a switching transistor, a driving transistor, a reset transistor, or other thin film transistors. In some embodiments, the thin film transistor includes at least one semiconductor layer. The semiconductor layer includes, but is not limited to, amorphous silicon, polysilicon such as low-temperature polysilicon (LTPS), metal oxide, other suitable materials, or combinations thereof. The metal oxide may include indium gallium zinc oxide (indium gallium zinc oxide, IGZO), indium zinc oxide (indium zinc oxide, IZO), indium gallium zinc tin oxide (indium gallium zinc tin oxide, IGZTO), other suitable materials, or combinations thereof. For example, in embodiments where the semiconductor layer is indium gallium zinc oxide, the ratio of In, ga, zn, O can be 1:1:1:4, and the semiconductor layer may also contain other components. The semiconductor layer may be doped with a p-type or n-type dopant.

The substrate 110 may also include passive components (not shown), such as capacitors, inductors, or other passive components. In addition, the substrate 110 includes wires (not shown), for example, which can be used to connect to a thin film transistor or a light emitting unit (e.g., the light emitting unit 120 described later), but the application is not limited thereto. In some embodiments, the substrate 110 may have light transmittance, and may allow some light to pass through. In some embodiments, the average light transmittance of the substrate 110 may be greater than or equal to 5% and less than or equal to 100%, such as greater than or equal to 50%, 70%, 80%, but the present application is not limited thereto. For example, the transmittance of a plurality of points (e.g., three points) may be measured for re-averaging, or a selected area (e.g., 1 mm) ² ) But is not limited thereto.

The display device 100 may include a plurality of light emitting units 120 disposed on the surface S1 of the substrate 110. In some embodiments, the light emitting unit 120 may include a plurality of light emitting diodes (light-emitting diodes), organic Light Emitting Diodes (OLEDs), quantum dots (Quantum Dot), quantum Dot light emitting diodes (QD-LEDs, QLEDs), other suitable light emitting units, or combinations thereof, but the present application is not limited thereto. The light emitting diode may include a sub-millimeter light emitting diode (Mini LED) and/or a micro light emitting diode (micro light-emitting diode). The light emitting diode generates electromagnetic radiation (e.g., light) using recombination of electron-hole pairs in the P-N junction. In a forward biased P-N junction formed of a direct bandgap material (direct band gap material), such as gallium arsenide (GaAs) or gallium nitride (GaN), recombination of electron-hole pairs in a Depletion region (Depletion region) is injected, at which time energy levels are lost after electrons are transferred from the conduction band to the valence band, while energy is released in a mode, such as photons. The electromagnetic radiation may be in the visible or non-visible region, and materials with different energy gaps may produce different colors of light.

In some embodiments, the display device 100 includes the sensor 130, and the sensor 130 may be disposed on the surface S2 of the substrate 110, where the surface S2 and the surface S1 are opposite. Although fig. 1 shows only one sensor 130, the display device 100 may include a plurality of sensors 130, and the present application is not limited thereto. In one embodiment, the sensor 130 may include an image sensor, an optical sensor, an ultrasonic sensor, other suitable sensors, or a combination thereof. The image sensor may include a photosensitive coupling element (Charge Coupled Device, CCD), a complementary metal oxide semiconductor (Complementary Metal-Oxide Semiconductor, CMOS), other suitable elements, or a combination thereof. In an embodiment, the light source sensed by the sensor 130 may include infrared light, visible light, and/or ultraviolet light, such as an infrared light sensor, a visible light sensor, an ultraviolet light sensor, or a combination thereof, but is not limited thereto. In one embodiment, since the substrate 110 has light transmittance, the light L can penetrate through the substrate 110 and be incident on the sensor 130.

As shown in fig. 2, the sensor 130 may include at least one supporting element 131, at least one photosensitive element 132, and/or at least one light receiving element 133. It should be noted that the sensor 130 may include other elements, such as a filter layer, for allowing a specific wavelength to be incident on the photosensitive element 132, but the application is not limited thereto. In some embodiments, at least one light receiving element 133 is disposed between the substrate 110 and at least one light sensing element 132. In one embodiment, the supporting element 131 may be used to carry or fix the photosensitive element 132, the light receiving element 133 and/or other elements. The supporting element 131 has an opening for allowing light to enter the light sensing element 132 and at least one light receiving element 133. In some embodiments, the light can be incident on the photosensitive element 132 through at least one light receiving element 133. In another embodiment, the sensor 130 may not include the supporting element 131, and other layers, such as a filter layer (not shown), an insulating layer (not shown), a light-transmitting layer (not shown), other suitable layers, or combinations thereof, may be formed between the photosensitive element 132 and the light-receiving element 133. In some embodiments, the light receiving element 133 may be omitted, or replaced with other elements. For example, when the sensor 130 is an ultrasonic sensor, the light receiving element 133 may be omitted, but is not limited thereto. The photosensitive element 132 may include a plurality of photodiodes (not shown) for converting the received light source into an electronic signal, and transmitting the electronic signal to an image processing chip (not shown) for image restoration. The light receiving element 133 may be disposed on the light sensing element 132, and may be used to enhance the light sensing sensitivity of the sensor 130, but is not limited thereto. For example, the light receiving element 133 may include at least one lens. The light receiving element 133 may be a lens array or a stack of a plurality of lenses, but is not limited thereto. Although fig. 2 shows that one light receiving element 132 is disposed corresponding to one light receiving element 133, the present application is not limited thereto, and for example, a plurality of light receiving elements 133 may be formed into an array and disposed corresponding to one light receiving element 132, or one light receiving element 133 may be disposed corresponding to a plurality of light receiving elements 132 according to design requirements.

Referring to fig. 3, fig. 3 is a top view of a display device 100 according to some embodiments of the application. The display panel 102 may include a display area 100A and a non-display area 100B adjacent to the display area 100A. For example, the non-display area 100B may be disposed around the display area 100A. In some embodiments, the display area 100A may be an area of the display panel 102 for displaying images, which corresponds to an area of the substrate 110 where the light emitting units 120 are disposed, and the non-display area 100B is not for displaying images, and the non-display area 100B is not provided with the light emitting units 120. The non-display region 100B may include a light shielding device (not shown) for shielding wires or other devices formed in the substrate 110. The light shielding element may include, but is not limited to, black photoresist, black ink jet, black resin, and/or other suitable light shielding materials. In one embodiment, the light emitting unit 120 may be disposed in the non-display area 100B, but is shielded by a light shielding element.

In an embodiment, the light emitting unit 120 may include at least one sub-pixel 121. Although fig. 3 shows that one light emitting unit 120 may include three sub-pixels 121, the present application is not limited thereto, and one light emitting unit 120 may include only one sub-pixel 121, or more than one sub-pixel 121 (e.g., four). The subpixel 121 shown in fig. 3 may include a blue subpixel, a red subpixel, a green subpixel, and a white subpixel, which respectively emit blue light, green light, red light, and white light, but the present application is not limited thereto.

In some embodiments, the light emitting diode in the light emitting unit 120 may include a p-type semiconductor layer, an n-type semiconductor layer, and a light emitting layer disposed therebetween. The p-type semiconductor layer may provide holes and the n-type semiconductor layer may provide electrons. Accordingly, the holes and electrons recombine to generate electromagnetic waves. The semiconductor layer may include aluminum nitride (AlN), gallium nitride (GaN), gallium arsenide (GaAs), indium nitride (InN), aluminum gallium nitride (AlGaN), aluminum indium nitride (AlInN), indium gallium nitride (InGaN), aluminum indium gallium nitride (AlInGaN), or a combination thereof, but is not limited thereto. The light emitting layer may include a homojunction (heterojunction), a single-quantum well (SQW), a multiple-quantum well (MQW), or other similar structures. In some embodiments, the light emitting layer comprises undoped n-type indium gallium nitride (In _x Ga _(1-x) N). In other embodiments, the light emitting layer may comprise, for example, aluminum indium gallium Al nitride _x In _y Ga _(1-x-y) N, other suitable materials. In addition, the light emitting layer may be a multi-quantum well structure including multiple well layers (e.g., indium gallium nitride (InGaN) and barrier layers (e.g., gallium nitride (GaN)) staggered.

In one embodiment, the light emitting unit 120 may include a molding material 122 surrounding and fixing the sub-pixels 121. The material of the molding material 122 may include a light transmissive substrate and a light impermeable dopant. The substrate may comprise silicon oxide, silicon nitride, resin, other suitable materials, or combinations thereof, but the application is not limited thereto. The opaque dopant may include a black material or a light scattering material, but is not limited thereto. The light emitting unit 120 may also include other elements. For example, the light emitting unit 120 may include a wavelength conversion element, the material of which includes a quantum dot film, a fluorescent material, or other wavelength conversion materials, and is not limited thereto. For example, the wavelength conversion element is an organic or inorganic layer mixed with quantum dots. The quantum dots may include zinc, cadmium, selenium, sulfur, indium phosphide (InP), gallium antimonide (GaSb), gallium arsenide (GaAs), cadmium selenide (CdSe), cadmium sulfide (CdS), zinc sulfide (ZnS), or a combination thereof, and are not limited thereto. The particle size of the quantum dots may range from about 1 nanometer (nm) to about 30 nm, but the present application is not limited thereto. The light emitting unit 120 may also include a filter layer. The wavelength of the light emitted by the light emitting unit 120 can be adjusted by the wavelength conversion element and/or the filter layer.

As shown in fig. 2 and 3, the display device 100 has a plurality of sensors 130, which may be disposed in the display area 100A. In some embodiments, a portion of the at least one sensor 130 may be disposed in the non-display area 100B. In other embodiments, the display area 100A has a central area (not shown) that may be remote from the non-display area 100B, the plurality of sensors 130 may be disposed in the central area, or the plurality of sensors 130 may overlap the central area. For example, the central region may comprise 50% to 95%,70%, 80%, 85%, 90%, or 93% of the display area 100A. For example, in one embodiment, the light receiving element 133 may have a light condensing function. It is noted that, in the upper view, the area of the sensor 130 may be greater than or equal to the area of the light receiving element 133. In addition, the profile of the light receiving element 133 may include a circle, an ellipse, or other shapes, to which the present application is not limited. In addition, in the upper view, the contours of the light receiving element 133 and the sensor 130 may be the same or different. In some embodiments, the sensor 130 may overlap at least a portion of the light emitting unit 120. More specifically, the light receiving element 133 may overlap at least a portion of the light emitting unit 120. Light is incident from the region between the light emitting units 120 to the light receiving element 133 through the substrate 110. In some embodiments, the display panel 102 may include a light receiving area 111, and the light receiving area 111 may correspond to an area of the display area 100A of the substrate 110 where the light emitting units 120 are not disposed. The light receiving region 111 overlaps the display region 100A. In some embodiments, at least a portion of the light receiving region 111 of the substrate 110 has light transmittance, and the average light transmittance of the light receiving region 111 may be greater than or equal to 1% and less than or equal to 100%, such as 20%, 50%, 70%, 80%, 90%, or 95%. For example, in an embodiment, the light average transmittance of the light receiving region 111 of the substrate 110 may be greater than or equal to 5% and less than or equal to 100%, such as 20%, 50%, 70%, 80%, 90%, or 95%.

In some embodiments, in the upper view, the area of one sensor 130 may be larger than the area of one light emitting unit 120. In some embodiments, in the upper view, the total area of one sensor 130 may be larger than the area of one light emitting unit 120. For example, in the top view, the total area of the light receiving elements 133 in one sensor 130 may be larger than one light emitting elementThe area of the light unit 120. In some embodiments, the total area of the light receiving elements 133 in one sensor 130 may be about 1mm ² To 100mm ² (1mm ² Less than or equal to 100mm of total area ² ) Within a range of, for example, 5mm ² 、10mm ² 、20mm ² Or 50mm ² But are not limited thereto, can be adjusted depending on design requirements. In one embodiment, for example, as the resolution requirement increases, the total area of the light receiving element 133 may be greater than 100mm ² (≧100mm ² ) But the present application is not limited thereto. In some embodiments, in the top view, the total area of all sensors 130 may be less than or equal to 70% of the area of display area 100A. For example, in the upper view, the total area of all the light receiving elements 133 may be less than or equal to 70% of the area of the display area 100A. In addition, in the upper view, the area of the display region 100A may be about 90% of the entire area of the display device 100, and the area of the non-display region 100B may be about 10% of the entire area of the display device 100, but the present application is not limited thereto. In some embodiments, one sensor 130 may overlap with a plurality of light emitting units 120 in the upper view. In some embodiments, in the upper view, it is assumed that the overlapping area of the light receiving element 133 and the light emitting unit 120 in the display device 100 is a first area, the area of the light receiving element 133 is a second area, and the ratio of the first area to the second area (first area/second area) is greater than about 0.01%>0.01 Less than 0.95%<0.95). In this embodiment, the ratio of the area of the light receiving element 133 to the area of the light emitting unit 120 in one sensor 130 is greater than 1 and less than 10. In the present application, overlapping includes "partial overlapping" and "complete overlapping".

Referring to fig. 4, fig. 4 shows a relationship between a focal length of the light receiving element 133 of the sensor 130 and a distance between the light receiving element 133 of the sensor 130 and the substrate 110. In order to simplify the drawing, only the light receiving element 133 is shown in fig. 4. In the normal direction of the surface S2 of the substrate 110, the minimum distance from the light receiving element 133 to the surface S2 of the substrate 110 is a distance D1, and the focal length of the light receiving element 133 is a focal length D2. In some embodiments, focal length D2 is greater than distance D1 (D2 > D1). In some embodiments, the focal distance D2 may be greater than or equal to about 5 times the distance D1, and the focal distance D2 may be less than about 1000 times the distance D1 (5+.d2/d1+.1000), such as 10 times, 20 times, 50 times, 100 times, or 500 times, but are not limited thereto. In some embodiments, the sensor 130 may include a light receiving element 133 with an optical zoom function, and the focal length D2 of the light receiving element 133 may be adjusted.

Referring to fig. 5, fig. 5 is a schematic cross-sectional view of a display device 200 according to some embodiments of the application. The display device 200 may be the same as or similar to the display device 100, one of which differs in that: the display panel 102 may include a low light-transmitting layer 140 disposed on the surface S1 of the substrate 110 and may be located between two adjacent light emitting units 120. For example, the low light-transmitting layer 140 may be disposed in the light-receiving region 111 (shown in fig. 3). In some embodiments, the transmittance of the low-transmittance layer 140 in the visible light band may be less than or equal to 50% and greater than or equal to 0.5% (0.5% +.ltoreq.50%), such as 2%, 5%, 10%, or 20%. The transmittance of the low light-transmitting layer 140 in other wavelength bands may be less than or equal to 50%, which is not limited by the present application. The material of the low light-transmitting layer 140 may include a photoresist, and a light-absorbing material or other materials may be added in the photoresist to control the transmittance of the low light-transmitting layer 140. In some embodiments, the transmittance of the low light transmission layer 140 may be less than or equal to the transmittance of the display device 200.

The light absorbing material may comprise zirconia (ZrO ₂ ) Potassium sodium niobate (KNbO) ₃ ) Silicon carbide (SiC), gallium phosphide (GaP), gallium arsenide (GaAs), zinc oxide (ZnO), silicon (Si), germanium (Ge) or silicon germanium (SiGe), other suitable materials, or combinations thereof, and are not limited thereto.

In some embodiments, a patterning process may be performed on the low light-transmitting layer 140, such that the low light-transmitting layer 140 has a plurality of openings 141 at the corresponding display area 100A (or between two adjacent light-emitting units 120). The light can penetrate through the substrate 110 through the openings 141 and be incident on the sensor 130. The patterning process includes a photolithography process and an etching process. The photolithography process may include photoresist coating (e.g., spin coating), soft baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning, drying (e.g., hard baking), other suitable processes, or combinations thereof. The photolithography process may also be replaced by maskless lithography, electron beam writing, ion beam writing, or molecular imprinting (molecular imprint). The etching process includes dry etching, wet etching, or other etching methods (e.g., reactive ion etching).

By providing the low light-transmitting layer 140, the contrast of the image of the display device 200 can be improved, so that the image of the display device 200 is clearer. In addition, in order to reduce the influence on the photosensitivity of the sensor 130 when improving the contrast of the image, an opening 141 may be formed at the display area 100A, so that the amount of light reaching the sensor 130 through the substrate 110 increases. In addition, the shape or number of the openings 141 can be adjusted according to the design, and the application is not limited thereto. In addition, the opening 141 may be filled with a transparent material to compensate for the strength of the low light transmission layer 140.

Referring to fig. 6, fig. 6 is a schematic cross-sectional view of a display device 300 according to some embodiments of the application. The display device 300 may be the same as or similar to the display device 100, one of which differs in that: the display device 300 includes a substrate 110'. A patterning process may be performed on the substrate 110 shown in fig. 1 to form a substrate 110' and a plurality of openings 112. In this embodiment, at least a portion of the sensor 130 is not covered by the substrate 110', i.e., the opening 112 exposes at least a portion of the sensor 130. The opening 112 may be formed in the substrate 110' in a region corresponding to the display region 100A. More specifically, the opening 112 may be formed between two adjacent light emitting units 120. In some embodiments, the opening 112 may be formed in a top view as shown in fig. 3, corresponding to the light receiving region 111. By forming the opening 112, the amount of light passing through the substrate 110' can be increased, improving the photosensitivity of the sensor 130 of the display device 300. In addition, the shape or number of the openings 112 can be adjusted according to the design, and the application is not limited thereto. In addition, the opening 112 may be filled with a transparent material to compensate for the strength of the substrate 110.

Referring to fig. 7A and 7B, fig. 7A is a top view of a display device 400 according to some embodiments of the application, and fig. 7B is a schematic cross-sectional view of the display device 400. As shown in fig. 7A and 7B, the sensor 130 may be disposed on the surface S1 of the substrate 110 and between two adjacent light emitting units 120. In these embodiments, since the external light is incident on the sensor 130, the light does not need to penetrate the substrate 110 first, so that the sensor 130 receives more light, thereby improving the photosensitivity of the display device 400.

Referring to fig. 8, fig. 8 is a schematic cross-sectional view of a display device 500 according to some embodiments of the application. The display device 500 may be the same as or similar to the display device 100, one of which differs in that: the display device 500 may include a support substrate 150 and a substrate 160, wherein the substrate 160 is disposed on the support substrate 150. The support substrate 150 may be used to provide a better support for the substrate 160. The material of the support substrate 150 may include Polyimide (PI), polyethylene terephthalate (polyethylene terephthalate, PET), polyethylene (PE), polyethersulfone (PEs), polycarbonate (PC), polymethyl methacrylate (PMMA), polybutylene terephthalate (Polybutylene terephthalate, PBT), polyethylene naphthalate (polyethylene naphthalate, PEN), glass, acrylic-based polymer, silicone-based polymer, any other suitable material, or a combination thereof. In some embodiments, the substrate 160 comprises a flexible substrate, such as a plastic substrate, or other suitable substrate, wherein the material of the plastic substrate may be polyimide, polyethylene terephthalate, polycarbonate, polyethersulfone or Polyarylate (PAR), other suitable materials, or combinations thereof, but is not limited thereto.

As shown in fig. 8, substrate 160 has a surface S1 and a surface S2. In some embodiments, substrate 160 includes substrate extension 161. The substrate extension 161 may be defined as a region of the substrate 160 after bending. As shown in fig. 8, the light emitting unit 120 is disposed on the surface S1 of the substrate 160, and the sensor 130 may be disposed on the substrate extension 161 of the substrate 160. In this embodiment, the support substrate 150 is disposed between the substrate 160 and the sensor 130. The sensor 130 may be located between the support substrate 150 and the substrate extension 161.

In some embodiments, the substrate 160 may include a plurality of active devices, such as thin film transistors (not shown). The light emitting unit 120 may be driven to emit light via a thin film transistor disposed on the substrate 160. Substrate 160 may also include passive components (not shown), such as capacitors, inductors, or other passive components. In addition, the substrate 160 includes conductive lines (not shown). By providing substrate 160 with flexibility, more circuit design layouts can be provided.

Referring to fig. 9, fig. 9 is a schematic cross-sectional view of a display device 600 according to some embodiments of the application. Display device 600 may be the same or similar to display device 500, with the difference: the sensor 130 is not in direct contact with the support substrate 150. As shown in fig. 9, the sensor 130 is disposed on a substrate extension 161 of the substrate 160. In this embodiment, the sensor 130 may be disposed on the surface S1 of the substrate 160. In addition, the display device 600 may have a plurality of openings 162, and the openings 162 may penetrate the support substrate 150 and the substrate 160 and extend to the substrate extension region 161 of the substrate 160. A portion of sensor 130 is not covered by support substrate 150 and/or substrate 160. More specifically, the opening 162 exposes a portion of the sensor 130. The opening 162 may be formed by performing a patterning process on the support substrate 150 and the substrate 160. The position of the opening 162 may correspond to the display area 100A (or between two adjacent light emitting units 120). Light may be incident on the sensor 130 through the plurality of openings 162. In addition, the shape or number of the openings 162 can be adjusted according to the design, and the application is not limited thereto. In addition, a transparent material may be filled into the opening 162.

The display devices 500 and 600 shown in fig. 8 and/or 9 may be applied to a tiled display device, and the tiled display device may include a plurality of display devices 500 and/or 600 to form a larger-sized display device, but the present application is not limited thereto, and other display devices disclosed in the present application, or a combination thereof, may also be applied to a tiled display device. In this embodiment, the display panel 102 at least includes a substrate 160 and a light emitting unit 120.

Referring to fig. 10A and 10B, fig. 10A and 10B are schematic diagrams illustrating interaction between a display device 100 and an object according to some embodiments of the application. When different objects pass through the display device 100, the display device 100 presents different images. For example, when the objects X and Y are respectively within the sensing range of the display device 100, the light emitting units 120 of the display device 100 emit different lights to present different images. It should be noted that the display device 200, 300, 400, 500 or 600 may be used instead of the display device 100, and the present application is not limited thereto.

In some embodiments, the interactive function can be achieved by disposing the image sensor on the display device. The image sensor can be used for detecting the first image, and the display panel can be used for outputting a second image or action corresponding to the first image. For example, the image sensor may present different images according to the sex of the sensed object using face recognition. For example, the sensed object is a man, and the image sensor displays the man's clothing or the merchandise of interest to the man; the object to be sensed is a woman, and the image sensor displays a woman's dress, or a commodity of interest to the woman, however, the application is not limited thereto. In one embodiment, the display device may display an interface providing query information when the image sensor senses that a person passes by.

In some embodiments, the image sensor may be integrated in a display area of the display device. In some embodiments, the image sensor includes a photosensitive element and a light receiving element. In some embodiments, the image sensor may overlap the light emitting unit. In some embodiments, the light emitting unit and the image sensor may be disposed on opposite surfaces of the display panel. In some embodiments, the light emitting unit and the image sensor may be disposed on the same surface of the display panel. The light emitting unit may include a plurality of light emitting diodes and be driven by thin film transistors formed in the display panel. In some embodiments, the area of one light receiving element is larger than the area of one light emitting unit. In some embodiments, the display panel may be a flexible substrate and have a flexible substrate extension region, and the image sensor may be disposed on the flexible substrate extension region. In some embodiments, the display device includes a low light transmission layer disposed on the display panel that increases the contrast of the display device image.

While the application has been described with reference to the preferred embodiments, it is not intended to limit the application thereto, and it is to be understood that other modifications and improvements may be made by those skilled in the art without departing from the spirit and scope of the application, which is therefore defined by the appended claims.

Claims

1. A display device, characterized in that it includes:

at least one sensor;

a support substrate disposed on the at least one sensor and including an opening; and

A display panel overlaps the support substrate and includes a substrate and a plurality of light-emitting units,

wherein one of the at least one sensor has a focal length greater than a distance between the one of the at least one sensor and the display panel,

The substrate of the display panel has a first side and a second side opposite to the first side, the plurality of light-emitting units are arranged on the first side, and the at least one sensor is arranged on the second side, The opening of the support substrate exposes at least a portion of the at least one sensor.

2. The display device of claim 1, wherein the plurality of light-emitting units comprise a plurality of organic light-emitting diodes.

3. The display device of claim 1, wherein the at least one sensor includes a photosensitive coupling element, a complementary oxide metal semiconductor, or a combination thereof.

4. The display device of claim 1, wherein the at least one sensor includes at least one photosensitive element and at least one light collecting element, and the at least one light collecting element is disposed on the substrate of the display panel and the at least one light collecting element. between photosensitive elements.

5. The display device of claim 4, wherein the at least one light-collecting element includes at least one lens.

6. The display device of claim 4, wherein the display panel has a display area overlapping the at least one sensor, and the total area of the at least one light collecting element is less than or equal to 70% of the area of the display area.

7. The display device of claim 1, wherein an area of the at least one sensor is larger than an area of one of the plurality of light-emitting units.

8. The display device of claim 1, wherein the substrate of the display panel includes an opening, and the opening of the substrate of the display panel exposes at least the portion of the at least one sensor.