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CN116632125A - Fluid-Assembled Carrier Substrate System for Mass Transfer of Micro-LEDs - Google Patents

Fluid-Assembled Carrier Substrate System for Mass Transfer of Micro-LEDs Download PDF

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CN116632125A
CN116632125A CN202310739434.2A CN202310739434A CN116632125A CN 116632125 A CN116632125 A CN 116632125A CN 202310739434 A CN202310739434 A CN 202310739434A CN 116632125 A CN116632125 A CN 116632125A
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micro
light emitting
carrier substrate
leds
substrate
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保罗·约翰·舒勒
佐佐木健司
葛特鄂孟
李宗霑
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Sharp Corp
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Sharp Corp
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Abstract

A micro-LED macro-transfer imprint system includes an imprint template having an array of capture locations, each configured with a columnar recess to temporarily secure a keel extending from a bottom surface of a micro-LED. For surface mount micro LEDs, the keels are non-conductive. In the case of a vertical micro LED, the keel is the second electrode that is electrically conductive. The imprint system further includes a fluid-assembled carrier substrate having an array of wells with a pitch separating adjacent wells that matches the pitch separating the capture locations of the stamp substrate. The display substrate includes an array of micro LED connection pads at the same pitch as the capture locations. The top surface of the stamp substrate is pressed against the display substrate, each capture location is connected to a respective micro LED location, and then the micro LEDs are transferred. A fluid assembled impression substrate for use with micro LEDs having a keel or axial is also provided.

Description

用于微型发光二极管巨量转移的流体组装载体衬底系统Fluid-Assembled Carrier Substrate System for Mass Transfer of Micro-LEDs

本申请为申请号为202111275465.4、申请日为2021-10-29、发明名称为“基于流体组装的微型发光二极管显示器的巨量转移方法”的专利的分案申请。This application is a divisional application of a patent with the application number 202111275465.4, the application date is 2021-10-29, and the invention title is "Mass transfer method of micro light-emitting diode display based on fluid assembly".

技术领域technical field

本申请涉及微型发光二极管(micro-light emitting diode,micro-LED)显示器领域,尤其涉及显示器制造过程中微型发光二极管的巨量转移系统及方法。The present application relates to the field of micro-light emitting diode (micro-LED) displays, in particular to a mass transfer system and method for micro-light emitting diodes in the display manufacturing process.

背景技术Background technique

红-绿-蓝(RGB)显示器由多个像素组成,这些像素发出三种波长的光,对应可见光中的红光、绿光和蓝光。这些像素的RGB部分(每个部分被称为子像素)以系统化的方式进行通电,从而叠加以产生可见光谱中的颜色。不同的显示器其生成RGB图像的方式也不同。液晶显示器(Liquid Crystal Displays,LCD)是目前最流行的技术,其通过使用白色光源(通常为发出荧光的白色LED)照射子像素上的彩色滤光片,从而产生RGB图像。白光中包含的一部分波长的光被吸收,另一部分波长的光则通过彩色滤光片透射。因此,一台LCD显示器的效率可能低于4%,并且其对比度受到从液晶单元格(cell)中漏出的光的限制。有机发光二极管(Organic Light Emitting Diode,OLED)显示器通过激发每一子像素中的有机发光材料从而直接发射出相应波长的光,进而产生RGB光线。OLED像素为直接发光,因此显示器的对比度较高,但是有机材料会随时间发生劣化,从而导致图像老化。Red-green-blue (RGB) displays consist of pixels that emit light at three wavelengths, corresponding to red, green, and blue in visible light. The RGB portions of these pixels (each called a sub-pixel) are energized in a systematic fashion to add up to produce colors in the visible spectrum. Different monitors generate RGB images in different ways. Liquid Crystal Displays (LCDs) are currently the most popular technology, which generate RGB images by illuminating color filters on sub-pixels with a white light source (usually a fluorescent white LED). Some wavelengths of light contained in white light are absorbed, and other wavelengths are transmitted through the color filter. As a result, an LCD display can be less than 4 percent efficient, and its contrast ratio is limited by light leaking from the liquid crystal cells. An Organic Light Emitting Diode (OLED) display directly emits light of a corresponding wavelength by exciting an organic light-emitting material in each sub-pixel, thereby generating RGB light. OLED pixels emit light directly, so the display has a high contrast ratio, but the organic material degrades over time, causing image burn-in.

第三种也即本申请涉及的显示器技术为微型发光二极管显示器,其使用微型(主体直径为5-150微米(μm))无机LED作为子像素并直接发光。无机微型发光二极管显示器相较于其他显示器具有很多优势,与LCD显示器相比,微型发光二极管显示器具有超过50,000:1的对比度以及更高的效率。不同于OLED显示器,无机LED不会出现老化现象,并且其可以达到的亮度明显更高。The third display technology that this application is concerned with is micro-LED displays, which use tiny (5-150 micron (μm) body diameter) inorganic LEDs as sub-pixels and emit light directly. Inorganic LED displays have many advantages over other displays. Compared with LCD displays, LED displays have a contrast ratio of more than 50,000:1 and higher efficiency. Unlike OLED displays, inorganic LEDs do not age and can achieve significantly higher brightness.

目前的主流的高清晰度电视(High Definition Television,HDTV)分辨率标准的电视具有两百万像素(或六百万子像素),分辨率更高的4K和8K标准分别为八百万和三千三百万像素。即使平板电脑和手机中使用的相对较小的显示屏也有数百万像素,其显示屏的分辨率超过每英寸六百像素(ppi)。因此,采用微型发光二极管的显示屏的制造,要求以较低的成本对像素间距不同的大面积微型发光二极管阵列进行组装,从而可以制造出各种尺寸和分辨率的显示器。最传统的微型发光二极管阵列组装技术被称为拾放技术,因为每个微型发光二极管都是独立的从载体上拾取并放置到基板上,如下所述。由于每个微型发光二极管都是单独处理的,因此组装的过程非常缓慢。The current mainstream high-definition television (High Definition Television, HDTV) resolution standard TV has two million pixels (or six million sub-pixels), and the higher-resolution 4K and 8K standards are eight million and three million pixels, respectively. Thirteen megapixels. Even the relatively small displays used in tablets and cell phones have millions of pixels, with displays having a resolution of more than six hundred pixels per inch (ppi). Therefore, the manufacture of display screens using micro-LEDs requires the assembly of large-area micro-LED arrays with different pixel pitches at a lower cost, so that displays of various sizes and resolutions can be manufactured. The most traditional micro-LED array assembly technology is called pick-and-place technology, because each micro-LED is individually picked from a carrier and placed on a substrate, as described below. Since each tiny LED is handled individually, the assembly process is very slow.

图1A-图1C描绘了基于氮化镓(Gallium Nitride,GaN)的LED堆叠的截面图(图1A)、两个完全加工的垂直微型发光二极管的截面图(图1B)和表面贴装微型发光二极管(图1C)(现有技术)的截面图。已经广泛采用的用于普通照明的基于GaN的高亮度LED已经创建了一个复杂的制造系统,因此在显示器上应用的微型发光二极管是基于该行业已有的投资上的。在一系列复杂的高温金属有机化学气相沉积(MOCVD)步骤中制造发射蓝色(约440纳米(nm))波长的GaN基LED,以生产图1A中横截面所示的垂直LED结构。制造过程在直径为50-200毫米(mm)的抛光蓝宝石、硅或碳化硅(SiC)衬底上进行。通过沉积未掺杂的GaN以及选择性的沉积氮化铝(AlN)缓冲层来制备表面,从而产生具有低缺陷以及GaN晶格常数的晶格表面。由于需要调整初始沉积的厚度和温度来补偿衬底与GaN之间的晶格失配,也即增加厚度以改善表面质量,因此高效率器件的厚度均高于3μm左右。由于MOCVD沉积工艺复杂且昂贵,因此优化微型发光二极管工艺以最有效地利用生长晶圆的整个区域非常重要。Figures 1A-1C depict a cross-sectional view of a Gallium Nitride (GaN)-based LED stack (Figure 1A), a cross-sectional view of two fully fabricated vertical micro-LEDs (Figure 1B), and a surface-mounted micro-LED Cross-sectional view of a diode (Fig. 1C) (prior art). The already widespread adoption of GaN-based high-brightness LEDs for general lighting has created a complex manufacturing system, so miniaturized LEDs for use in displays are based on investments already made by the industry. GaN-based LEDs emitting at blue (about 440 nanometers (nm)) wavelengths were fabricated in a complex series of high-temperature metal-organic chemical vapor deposition (MOCVD) steps to produce the vertical LED structure shown in cross-section in Figure 1A. The fabrication process takes place on polished sapphire, silicon, or silicon carbide (SiC) substrates with a diameter of 50-200 millimeters (mm). The surface is prepared by depositing undoped GaN and optionally depositing an aluminum nitride (AlN) buffer layer, resulting in a lattice surface with low defects and GaN lattice constant. Since it is necessary to adjust the thickness and temperature of the initial deposition to compensate for the lattice mismatch between the substrate and GaN, that is, to increase the thickness to improve the surface quality, the thickness of high-efficiency devices is higher than about 3 μm. Since the MOCVD deposition process is complex and expensive, it is important to optimize the micro-LED process to most efficiently utilize the entire area of the growth wafer.

在初步生长以形成晶体GaN表面后,通过添加硅掺杂生成第一个LED层,以形成用于阴极的n+GaN。选择性地,所述堆叠可以包括针对电子注入和空穴阻挡进行调整的层。接下来,沉积具有氮化镓铟(InxGa1-xN)和GaN交替层的多量子阱(Multiple Quantum Well,MQW)结构,其中铟含量和所述层的厚度决定了器件的发射波长。增加铟含量会使发射峰向更长的波长移动,但也会增加由于晶格失配引起的应力,因此无法制作出高效率的GaN器件用于红光发射,绿光LED的效率也低于蓝光LED。在形成MQW之后,堆叠结构还可以包括针对电子阻挡和空穴注入进行调整的层。通过沉积镁(Mg)掺杂GaN以形成p+阳极层,从而完成MOCVD层序列。After the initial growth to form the crystalline GaN surface, the first LED layer is created by adding silicon doping to form n+ GaN for the cathode. Optionally, the stack may include layers tuned for electron injection and hole blocking. Next, a Multiple Quantum Well (MQW) structure with alternating layers of Indium Gallium Nitride (In x Ga 1-x N) and GaN is deposited, where the indium content and the thickness of the layers determine the emission wavelength of the device . Increasing the indium content shifts the emission peak to longer wavelengths, but also increases the stress due to lattice mismatch, so high-efficiency GaN devices cannot be made for red emission, and green LEDs are less efficient than Blue LEDs. After forming the MQWs, the stack structure may also include layers tuned for electron blocking and hole injection. The MOCVD layer sequence is completed by depositing magnesium (Mg) doped GaN to form the p+ anode layer.

用于一般照明的LED(每侧高达3-4mm)远大于应用于微型发光二极管显示器中的微型发光二极管(直径为5-150μm),因此对图案化及电极的要求都明显不同。微型发光二极管需要用焊接材料或者非对称导电膜(Asymmetric Conductive Film,ACF)绑定到基板电极上,而大型号LED通常是通过引线绑定或通过焊膏绑定到引线框架上。由于微型发光二极管的体积非常小,因此在图案化过程中MOCVD晶圆上的大部分区域会被移除,从而减少每个晶圆的可用发光面积。LED晶圆相对较贵,而制造微型发光二极管时需要的高分辨率进一步拉高了成本,因此尽可能有效的使用发光区域以最大程度地降低微型发光二极管显示器的材料成本是十分重要的。LEDs used for general lighting (up to 3-4mm per side) are much larger than micro-LEDs (5-150μm in diameter) used in micro-LED displays, so the requirements for patterning and electrodes are significantly different. Miniature light-emitting diodes need to be bound to substrate electrodes with soldering materials or Asymmetric Conductive Film (ACF), while large-scale LEDs are usually bound to lead frames by wire bonding or solder paste. Due to the very small size of micro-LEDs, most of the area on the MOCVD wafer is removed during the patterning process, reducing the available light-emitting area per wafer. LED wafers are relatively expensive, and the high resolution required to manufacture micro-LEDs further drives up the cost, so it is important to use the light-emitting area as efficiently as possible to minimize the material cost of micro-LED displays.

在最简单的工艺流程中,通过沉积一薄(几纳米)氧化镍(NiOX)以匹配p+GaN工作函数,并沉积一层厚度为50-300nm的氧化铟锡(Indium Tin Oxide,ITO),以在MOCVD堆栈上形成透明导电电极。之后对沉积后的堆栈结构进行图案化和蚀刻,通常会使用基于氯气(Cl2)的反应性离子蚀刻(Reactive Ion Etch,RIE)工艺,以生产具有最小实际尺寸和间距的单个微型发光二极管,特别是当以高效率生产微型发光二极管时,LED结构的厚度仅为3-5μm,因此LED结构的厚度限制了可以成功蚀刻的最小空间。In the simplest process flow, by depositing a thin (several nanometers) nickel oxide (NiO X ) to match the p+GaN work function, and depositing a layer of Indium Tin Oxide (ITO) with a thickness of 50-300nm , to form transparent conductive electrodes on the MOCVD stack. The deposited stack structure is then patterned and etched, usually using a chlorine (Cl 2 )-based reactive ion etch (Reactive Ion Etch, RIE) process to produce individual miniature light-emitting diodes with the smallest practical size and spacing, Especially when producing miniature light-emitting diodes with high efficiency, the thickness of the LED structure is only 3-5 μm, so the thickness of the LED structure limits the smallest space that can be successfully etched.

如图1C示意性所示,在蚀刻出LED的轮廓后,会进行额外的处理,从而在阳极上形成电极。为了防止漏电并且蚀刻出用于连接ITO层的开口,通常会设置一钝化层,所述钝化层通常由等离子体增强化学气相沉积(Plasma-enhanced Chemical Vapor Deposition,PECVD)二氧化硅(Silicon Dioxide,SiO2)或选择性的包括设于表面的薄原子沉积(AtomicLayer Deposition,ALD)氧化铝(Aluminum Oxide,Al2O3)层。该阳极结构通过沉积电极堆栈结构来完成,所述电极堆栈结构包括如铟/锡(In/Sn)或金、锗(Au/Ge)合金之类的材料。After etching the outline of the LED, as schematically shown in Figure 1C, additional processing is performed to form electrodes on the anode. In order to prevent leakage and etch out the opening for connecting the ITO layer, a passivation layer is usually provided, and the passivation layer is usually made of plasma-enhanced chemical vapor deposition (Plasma-enhanced Chemical Vapor Deposition, PECVD) silicon dioxide (Silicon Dioxide, SiO 2 ) or optionally a thin atomic deposition (Atomic Layer Deposition, ALD) aluminum oxide (Aluminum Oxide, Al 2 O 3 ) layer on the surface. The anode structure is accomplished by depositing an electrode stack comprising materials such as indium/tin (In/Sn) or gold, germanium (Au/Ge) alloys.

图2A描述了使用激光剥离(Laser Lift Off,LLO)从蓝宝石衬底上移除微型发光二极管的过程。图2B描述了从载体晶圆上器件将移动并放置到显示基板上的拾放过程。图2C描述了微型发光二极管阳极与基板电极的连接(现有技术)。具体来说,在图2A中,制作完成的微型发光二极管通过一粘合胶层绑定到载体晶圆上,同时通过激光剥离从蓝宝石衬底上移除。在图2B中,可以通过拾取头从载体上移除一微型发光二极管,并将其放置在一子像素上,使其阳极与基板上对应的电极电连接。像素是通过在微型发光二极管上涂覆合适的电介质(例如可光刻图案的聚酰亚胺)来完成的,同时使微型发光二极管的阴极与基板上的电极连接。金属互连被沉积和图案化以形成如图2C所示的连接。Figure 2A depicts the process of removing micro LEDs from a sapphire substrate using laser lift off (Laser Lift Off, LLO). Figure 2B depicts the pick-and-place process in which devices are moved from the carrier wafer and placed on the display substrate. Figure 2C depicts the connection of the micro LED anode to the substrate electrode (prior art). Specifically, in FIG. 2A , the fabricated miniature light-emitting diodes are bonded to the carrier wafer through an adhesive layer, and removed from the sapphire substrate by laser lift-off. In FIG. 2B , a micro LED can be removed from the carrier by a pick-up head and placed on a sub-pixel with its anode electrically connected to the corresponding electrode on the substrate. Pixels are implemented by coating the micro-LEDs with a suitable dielectric (such as photo-patternable polyimide), while connecting the cathodes of the micro-LEDs to electrodes on the substrate. Metal interconnects are deposited and patterned to form connections as shown in Figure 2C.

发出波长约630nm红光的LED,其通常有生长在砷化镓(GaAs)上的磷化铝镓铟(AlGaInP)制成,由于GaAs是不透明的,因此不能使用激光剥离技术从GaAs衬底上剥离LED。因此若想将红光LED从衬底上剥离,可以完全蚀刻基板,或者使用选择性蚀刻(通常使用氯化氢(HCl):乙酸)来底切并剥离LED。LED的尺寸(横截面)与GaN通用照明LED相似(尺寸为150-1000μm)。在专利:US10,804,426中更全面地描述了AlGaInP LED工艺,该专利以引用方式并入本文。LEDs that emit red light with a wavelength of about 630nm, which are usually made of aluminum gallium indium phosphide (AlGaInP) grown on gallium arsenide (GaAs). Since GaAs is opaque, it cannot be removed from the GaAs substrate using laser lift-off technology. Peel off the LEDs. So if you want to lift the red LED off the substrate, you can either etch the substrate completely, or use a selective etch (usually using hydrogen chloride (HCl): acetic acid) to undercut and lift off the LED. The dimensions (cross-section) of the LEDs are similar to GaN general lighting LEDs (150-1000 μm in size). The AlGaInP LED process is more fully described in patent: US 10,804,426, which is incorporated herein by reference.

上述的拾放组装流程存在一些重要的问题,会导致较高的成本和较低的产量。具体来说,组装过程本质上是串行的,因此组装数百万个微型发光二极管需要很长的时间,并且成本很高。微型发光二极管本身的小尺寸使得抓取头很难制作,并且抓取仪器的边缘很可能在抓取过程中干扰相邻的微型发光二极管或在组装过程中干扰像素之间的反射器结构。上述的单个拾放方法可以通过使用巨量转移头同时抓取并转移多个微型发光二极管来扩展为并行过程。然而,这种巨量转移法的质量可能会很差,这是由于同时转移的一组微型发光二极管中会存在有缺陷的元件,并且每个微型发光二极管之间的间距是由生长在晶圆上的元件的间距决定的。There are some important issues with the pick-and-place assembly process described above that lead to higher costs and lower yields. Specifically, the assembly process is serial in nature, so assembling millions of tiny LEDs takes a long time and is expensive. The small size of the micro-LEDs themselves makes the gripper head difficult to fabricate, and the edges of the gripping instrument are likely to interfere with adjacent micro-LEDs during gripping or with reflector structures between pixels during assembly. The single pick-and-place method described above can be extended to a parallel process by using a mass transfer head to simultaneously pick and transfer multiple miniature LEDs. However, the quality of this mass transfer method can be poor due to the presence of defective components in a group of micro-LEDs transferred at the same time, and the spacing between each micro-LED is determined by the growth process on the wafer. determined by the spacing of the components on the

图3A-3H描述了一个巨量转移法的示例(现有技术)。巨量转移法即为将阵列排列的多个微型发光二极管作为整体转移到显示基板上,目前已经被广泛的开发来解决串行拾放组装的低吞吐量问题。在最简单的质量转移过程中,矩形压印印章从载体上拾取一个矩形的微型发光二极管阵列,并将微型发光二极管压靠在显示基板上,使每一微型发光二极管与一相应的电极结合。由于制作RGB显示器需要考虑不同颜色的微型发光二极管,转移压印印章被安排为每三个微型发光二极管拾取一次,从而为其他两种子像素颜色的微型发光二极管留出空间。对于图2C所示的表面贴装微型发光二极管,组装过程按如下顺序进行:3A-3H depict an example of a mass transfer method (prior art). The mass transfer method is to transfer a plurality of micro light-emitting diodes arranged in an array to a display substrate as a whole, and has been widely developed to solve the low throughput problem of serial pick-and-place assembly. In the simplest mass transfer process, a rectangular imprint stamp picks up a rectangular micro-LED array from a carrier, and presses the micro-LEDs against the display substrate so that each micro-LED is combined with a corresponding electrode. Since different colors of LEDs need to be considered in making an RGB display, the transfer stamp stamp is arranged to be picked up every third LED, thus leaving room for the other two sub-pixel colored LEDs. For the surface-mount miniature LEDs shown in Figure 2C, the assembly process proceeds in the following order:

1)为每种颜色的微型发光二极管准备单独的MOCVD晶片,每个微型发光二极管之间具有适当的尺寸和间距。相邻微型发光二极管之间的空隙被称为间距。请参阅图3A。每个微型发光二极管都有一个阴极和阳极,用于连接到显示器基板。微型发光二极管阵列通过激光剥离从生长晶片上移除并保持在载体衬底(图未示)上。1) Prepare a separate MOCVD wafer for each color of micro-LEDs, with appropriate size and spacing between each micro-LED. The gap between adjacent micro LEDs is called pitch. See Figure 3A. Each tiny LED has a cathode and anode for connection to the display substrate. The array of micro LEDs is removed from the growth wafer by laser lift-off and held on a carrier substrate (not shown).

2)显示器基板上(图3B)设置有多组阴极电极和阳极电极,每一组电极间的间距是晶圆上每一微型发光二极管之间间距的若干倍,因此电极与转移压印印章上的微型发光二极管的位置会相互匹配。这个间距决定了显示器最终的分辨率。所述电极可以是铜、氧化铟锡/铝(ITO/Al)、金或者如锡/铟(Sn/In)的焊料。还可以使用ACF膜来覆盖电极。通过确定显示器面板上的电极和微型发光二极管的材料,可以通过下述步骤5中的后续绑定工艺来形成欧姆接触。2) Multiple sets of cathode electrodes and anode electrodes are arranged on the display substrate (Figure 3B). The distance between each set of electrodes is several times the distance between each micro-LED on the wafer. The positions of the tiny LEDs will match each other. This spacing determines the final resolution of the display. The electrodes may be copper, indium tin oxide/aluminum (ITO/Al), gold, or solder such as tin/indium (Sn/In). It is also possible to use an ACF membrane to cover the electrodes. By determining the materials of the electrodes on the display panel and the micro light emitting diodes, ohmic contacts can be formed through the subsequent bonding process in step 5 below.

3)根据拾取点与显示器上子像素间距相匹配的位置来准备压印印章。目前应用于固定每一微型发光二极管的拾取机制包括弹性体、胶带、静电和磁场。图3C描述了一个大小为3*3像素的压印印章,但实际上的压印印章通常会装配数百个像素。3) Prepare the embossed stamp based on where the pick-up point matches the sub-pixel pitch on the display. Pickup mechanisms currently used to hold each tiny LED include elastomers, tape, static electricity, and magnetic fields. Figure 3C depicts an embossed stamp with a size of 3*3 pixels, but actual imprinted stamps usually assemble hundreds of pixels.

4)请参阅图3D,压印印章与承载第一种颜色的微型发光二极管的载体衬底对齐放置,并使压印印章与载体衬底接触,从而使固定结构可以抓取多个微型发光二极管并将其从载体衬底上移除。4) See Figure 3D, the embossed stamp is placed in alignment with the carrier substrate carrying the micro-LEDs of the first color, and the imprinted stamp is in contact with the carrier substrate, so that the fixing structure can grab multiple micro-LEDs and remove it from the carrier substrate.

5)请参阅图3E,填充好的压印印章与第一组显示器基板上的电极对齐放置。5) See Figure 3E, the filled embossed stamp is placed in alignment with the electrodes on the first set of display substrates.

6)请参阅图3F,将压印印章压靠并接触显示器基板,通常会一并进行加热以使微型发光二极管电极与显示器基板上的电极形成绑定结构。在形成绑定并充分冷却以固定微型发光二极管之后,将压印印章移除以供重新使用。6) Referring to FIG. 3F , the embossed stamp is pressed against and contacts the display substrate, and is usually heated together so that the electrodes of the micro-LEDs and the electrodes on the display substrate form a binding structure. After the bond has formed and cooled sufficiently to secure the miniature LEDs, the imprint stamp is removed for reuse.

7)如图3G-图3H所示,分别对第二种颜色和第三种颜色的微型发光二极管进行相同的操作,从而形成RGB显示阵列。7) As shown in FIG. 3G-FIG. 3H, the same operation is performed on the micro light-emitting diodes of the second color and the third color respectively, so as to form an RGB display array.

上述巨量转移方法进行组装是可行的,并且已经应用于显示器的制造中,但仍然存在一些问题导致产品良率较低以及产品成本较高。首先,在图3B中,显示器在x方向和y方向上的间距只能为MOCVD晶圆上微型发光二极管之间间距的整数倍,图中示例为3*2。而一个完善的显示器制造技术必须能够制造出符合行业标准的不同尺寸的屏幕,如4K(3840*2160像素),因此需要一种可以改变微型发光二极管在压印印章上间距的技术(间距扩展)。也可以为每个显示器就尺寸和分辨率定制MOCVD晶圆上的微型发光二极管的尺寸,但这增加了不必要的成本。其次,拾取装置必须在连接强度的大小上取得平衡,如果连接强度过小,一些微型发光二极管就不会从载体衬底上脱离,从而在阵列中留下间隙。相反,若连接强度过大,微型发光二极管在焊接在基板上之后也会被强行移除。在这两种情况下,都会使子像素的亮度降低,这在显示器中是不能容忍的。最后,转移压印印章的结构复杂且难以制造。连接点必须小于微型发光二极管之间的间距从而避免压印印章干扰到相邻的微型发光二极管。这对于需要产生局部场(如静电或磁力)的复杂的固定方法来说很困难。压印印章还容易受到污染和损坏,尤其是由聚二甲基硅氧烷(PDMS)等弹性体制成的压印印章,因此如何进行有效的清洁以供重复使用压印印章也非常重要。The above-mentioned mass transfer method for assembly is feasible and has been applied in the manufacture of displays, but there are still some problems resulting in low product yield and high product cost. First, in FIG. 3B , the pitch of the display in the x-direction and y-direction can only be an integer multiple of the pitch between the micro light-emitting diodes on the MOCVD wafer, and the example in the figure is 3*2. And a complete display manufacturing technology must be able to manufacture screens of different sizes that meet industry standards, such as 4K (3840*2160 pixels), so a technology that can change the spacing of micro-LEDs on the embossed stamp is needed (pitch expansion) . It is also possible to customize the size and resolution of the tiny LEDs on the MOCVD wafer for each display, but this adds unnecessary cost. Second, the pick-up device must strike a balance in the size of the connection strength. If the connection strength is too small, some micro LEDs will not detach from the carrier substrate, leaving gaps in the array. On the contrary, if the connection strength is too high, the micro LEDs will be forcibly removed after being soldered on the substrate. In both cases, there is a reduction in the brightness of the sub-pixels, which cannot be tolerated in a display. Finally, the structure of transfer imprint stamps is complex and difficult to manufacture. The connection points must be smaller than the spacing between the micro-LEDs so as to avoid the embossed stamp from interfering with adjacent micro-LEDs. This is difficult for complex fixation methods that require the generation of localized fields such as electrostatic or magnetic forces. Imprint stamps are also susceptible to contamination and damage, especially those made of elastomers such as polydimethylsiloxane (PDMS), so how to effectively clean the imprint stamps for repeated use is also very important.

为了说明巨量转移压印工艺的缺陷,图3H描述了几种可能出现的故障情况:To illustrate the drawbacks of the mass transfer imprinting process, Figure 3H depicts several possible failure scenarios:

故障a:由于在拾取时压印印章的粘合力较差导致缺少微型发光二极管;Fault a: Missing micro-LEDs due to poor adhesion of the imprinted stamp when picked up;

故障b:因压印印章上存在污染导致微型发光二极管错放;Fault b: Misplacement of micro-LEDs due to contamination on the embossed stamp;

故障c:由于转印压印印章污染带来的颗粒;Fault c: Particles due to contamination of the transfer imprint stamp;

故障d:破损的微型发光二极管;Fault d: Broken micro-LED;

故障e:由于MOCVD工艺的缺陷导致的微型发光二极管短路:Fault e: Micro LED short circuit due to defects in MOCVD process:

故障f:由于微型发光二极管被压印印章强行移除导致的电极损坏。Fault f: Electrode damage due to forcible removal of micro-LEDs by embossed stamp.

图4A和图4B描述了在100毫米晶圆上使用14毫米压印印章(图4A)用以压印拾取的示例性区域覆盖。其中,20%的微型发光二极管最终保留在晶圆上,有三个压印印章上存在有缺陷的微型发光二极管。上述质量转移过程的另一个限制是压印印章的方形形状,这与用于以MOCVD生成LED的圆形晶圆不匹配。图4A给出的是一种典型的在100mm晶圆上使用14*14mm压印印章时的排列情况。采用大面积的压印印章,可以提高组装的速度,代价是会在生长晶圆上留下更多的微型发光二极管。由于需要满足填满所有压印印章的要求,因此晶圆上有较大的区域无法使用压印印章。在上述示例中,被放弃的质量合格的微型发光二极管约占总数的20%,这直接增加了成本。此外,对于有缺陷的微型发光二极管,必须要进行修复或者舍弃受到影响的压印印章。上述示例仅出于说明目的描述了随机的三个缺陷,若在该示例中舍弃有缺陷的压印印章,则只有约70%的初始微型发光二极管可被用于显示器的制造。4A and 4B depict exemplary area coverage for imprint pick-up using a 14 mm imprint stamp ( FIG. 4A ) on a 100 mm wafer. Of these, 20% of the micro-LEDs remained on the wafer, and there were defective micro-LEDs on three imprinted stamps. Another limitation of the mass transfer process described above is the square shape of the imprint stamp, which does not match the circular wafers used to generate LEDs with MOCVD. Figure 4A shows a typical arrangement of 14*14mm embossed stamps on a 100mm wafer. Using large-area imprint stamps can speed up assembly, at the expense of leaving more tiny LEDs on the growing wafer. There are large areas on the wafer where imprint stamps cannot be used due to the requirement to fill all imprint stamps. In the above example, discarded mini LEDs of acceptable quality account for about 20% of the total, which directly increases the cost. Furthermore, defective micro-LEDs must be repaired or the affected stamp stamps discarded. The above example depicts three random defects for illustrative purposes only, and if the defective imprint stamp is discarded in this example, only about 70% of the initial miniature LEDs can be used for the manufacture of the display.

巨量转移法有一个显著的优势,即绑定过程是在对微型发光二极管施加压力的情况下进行的,因此两个键合电极之间具有良好的机械接触。这确保了电极间具有大面积的接触。机械接触还会破坏表面上绝缘的氧化物,从而改善焊接材料的湿润性。ACF键合同样需要压力,以使导电填充材料与微型发光二极管以及显示器基板上的电极形成硬接触。A significant advantage of the mass transfer method is that the bonding process takes place under pressure on the micro-LEDs, so that there is good mechanical contact between the two bonding electrodes. This ensures a large area of contact between the electrodes. Mechanical contact also breaks insulating oxides on the surface, which improves the wetting of the solder material. ACF bonding also requires pressure to make hard contact between the conductive fill material and the micro LEDs and electrodes on the display substrate.

若有一种结构和方法可以填充微型发光二极管显示器的巨量转移组装的载体衬底,且可以如下方式提高组装的灵活性和产量,则是有利的:It would be advantageous to have a structure and method that can fill a carrier substrate for mass transfer assembly of micro-LED displays, and that can increase assembly flexibility and yield in the following manner:

1.可以通过简单的间距拓展实现任意显示分辨率;1. Any display resolution can be realized through simple spacing expansion;

2.可以制造一系列没有缺失、损坏或短路等设备缺陷的微型发光二极管(已知芯片良好);2. It is possible to manufacture a series of miniature light-emitting diodes (chips known to be good) without device defects such as missing, damaged or short-circuited;

3.可以通过大规模并行转移的方法填充和转移压印印章来提高巨量转移的组装速度;3. The assembly speed of mass transfer can be improved by filling and transferring imprinted stamps by means of massive parallel transfer;

4.使用简单的转移压印印章,具有较低的制造成本,可以通过强力的清洗以重新使用;4. Use simple transfer embossing stamps, which have low manufacturing costs and can be reused through strong cleaning;

5.可以采用简单且不损伤显示基板的压印机构;5. A simple imprinting mechanism that does not damage the display substrate can be used;

6.可以从有缺陷的压印印章中回收多余的微型发光二极管。6. Excess micro-LEDs can be recovered from defective embossed stamps.

发明内容Contents of the invention

本申请提供一种通过流体组装在载体衬底或转移压印印章上制备微型发光二极管阵列的方法以及相关结构。可以将组装好的微型发光二极管应用到显示器基板上,通过巨量转移方法进行绑定。微型发光二极管通过传统的MOCVD方法在晶圆上制成,其形状选择为便于流体组装和压印到显示器基板上的样式。The present application provides a method of fabricating micro-LED arrays on carrier substrates or transfer imprint stamps by fluid assembly and related structures. The assembled miniature light-emitting diodes can be applied to the display substrate and bonded by mass transfer method. Micro-LEDs are fabricated on wafers by conventional MOCVD methods, and their shape is chosen in a pattern that facilitates fluid assembly and imprinting onto display substrates.

因此,本申请提供一种微型发光二极管巨量转移压印系统,包括具有顶面的压印印章基板。在所述顶面上形成有阵列设置的压印印章基板捕集位置,每一所述捕集位置均设有柱状凹槽,用于暂时固定从微型发光二极管的底面延伸的龙骨。在微型发光二极管为表面贴装型时,其具有一平面的顶表面,所述平面的顶表面包括第一电极和第二电极。当微型发光二极管为垂直型时,其具有一平面的顶表面,所述平面的顶表面带有第一电极,此时所述龙骨为一导电的第二电极。所述压印系统还包括一流体组装载体衬底,所述载体衬底平面的顶表面上形成有阵列设置的阱,所述阱的阵列具有分隔相邻阱的间距,所述间距与所述压印印章基板上分隔相邻所述捕集位置的间距相匹配。Therefore, the present application provides a micro-LED mass transfer imprinting system, which includes an embossing stamp substrate having a top surface. An array of embossed stamp substrate capturing positions are formed on the top surface, each of the capturing positions is provided with a columnar groove for temporarily fixing the keel extending from the bottom surface of the micro light emitting diode. When the micro light emitting diode is a surface mount type, it has a planar top surface, and the planar top surface includes a first electrode and a second electrode. When the micro light emitting diode is vertical, it has a planar top surface with a first electrode, and at this time the keel is a conductive second electrode. The imprinting system also includes a fluid assembled carrier substrate having an array of wells formed on a planar top surface of the carrier substrate, the array of wells having a spacing separating adjacent wells, the spacing being different from the The pitch separating adjacent said capture locations on the imprinted stamp substrate is matched.

一种关联的微型发光二极管巨量转移方法包括:提供上述带有阱阵列的流体组装载体衬底,并提供上述的压印印章基板,其中阵列中每一捕集位置配置有与所述载体衬底上的阱相匹配的柱状凹槽。该方法使用流体组装工艺,使得微型发光二极管填充进所述载体衬底的阱中。该方法将压印印章基板的顶表面压靠在载体衬底的顶表面上,使每一所述捕集位置与相应的阱对应,从而将微型发光二极管从载体衬底转移到压印印章基板上。每一捕集位置的凹槽承载从微型发光二极管底面延伸出的龙骨,并通过对龙骨的束缚,将微型发光二极管固定到压印印章基板上。载体衬底的使用消除了MOCVD晶圆上微型发光二极管之间的间距带来的限制,从而允许将各种压印印章基板间距应用于不同的显示器基板尺寸和分辨率中。A related micro-LED mass transfer method includes: providing the above-mentioned fluid-assembled carrier substrate with an array of wells, and providing the above-mentioned embossed stamp substrate, wherein each trapping position in the array is configured with the carrier substrate. The wells on the bottom match the columnar grooves. The method uses a fluidic assembly process such that micro-LEDs are filled into wells of the carrier substrate. The method transfers the micro LEDs from the carrier substrate to the embossed stamp substrate by pressing the top surface of the embossed stamp substrate against the top surface of the carrier substrate so that each of said trapping sites corresponds to a corresponding well superior. The groove at each trapping position bears a keel extending from the bottom surface of the micro-LED, and by binding the keel, the micro-LED is fixed to the embossed stamp substrate. The use of a carrier substrate removes the limitation imposed by the pitch between micro-LEDs on the MOCVD wafer, allowing various imprinted stamp substrate pitches to be applied to different display substrate sizes and resolutions.

该方法还提供具有微型发光二极管连接垫阵列的显示基板,其中每个微型发光二极管连接垫包括至少一形成于顶表面的电极,所述电极与一下方的列和行控制线的矩阵电连接。所述连接垫具有分隔相邻位置的间距,该间距与分隔压印印章基板中相邻捕集位置的间距相匹配。该方法将压印印章基板顶表面压在显示基板的顶表面上,每个捕集位置与相应的微型发光二极管位置连接,并将多个微型发光二极管从压印印章基板转移到显示基板的多个连接垫上。一方面,将微型发光二极管转移到显示基板的连接垫上的步骤包括加热显示基板以将多个微型发光二极管绑定到多个连接垫上。在RGB显示的情况下,该方法可以依次将捕集位置上设有第一波长微型发光二极管、第二波长微型发光二极管、第三波长微型发光二极管的压印印章基板进行压合,或者一个单独的压印印章基板对应于一个波长的微型发光二极管。The method also provides a display substrate having an array of micro LED connection pads, wherein each micro LED connection pad includes at least one electrode formed on the top surface, said electrode being electrically connected to an underlying matrix of column and row control lines. The connection pads have a pitch separating adjacent locations that matches a pitch separating adjacent capture locations in the stamp substrate. The method presses the top surface of the embossed stamp substrate onto the top surface of the display substrate, each capture location is connected to a corresponding micro LED location, and transfers a plurality of micro LEDs from the embossed stamp substrate to the display substrate. connection pads. In one aspect, the step of transferring the micro-LEDs to the connection pads of the display substrate includes heating the display substrate to bind the plurality of micro-LEDs to the plurality of connection pads. In the case of RGB display, the method can sequentially press the embossed stamp substrates with the micro-LEDs of the first wavelength, the micro-LEDs of the second wavelength, and the micro-LEDs of the third wavelength on the capture position, or a separate The imprinted stamp on the substrate corresponds to a wavelength of microscopic LEDs.

本申请还提供一种微型发光二极管巨量转移方法,该方法采用具有平面的顶表面的流体组装压印印章基板,所述顶表面上形成有多个具有第一周边形状、深度和平面的底表面的捕集位置。通过流体组装过程,所述捕集位置可以被具有第一周边形状的微型发光二极管填充,所述微型发光二极管具有大于捕集位置深度的厚度,与捕集位置底表面接触的底表面,一个平面的顶表面以及延伸出所述捕集位置的第一电极,以及一个固定机构。一方面所述固定机构为一形成于所述微型发光二极管顶表面的龙骨,所述龙骨既可以是与第一电极连接的导电的龙骨,也可以是在微型发光二极管固定在压印印章基板上之后移除的临时的不导电的龙骨。另一方面,所述固定机构为设于于每一微型发光二极管底表面的包括共轭生物分子对的第一组件。在这种情况下,每一捕集位置的底表面设有一包括共轭生物分子对的第二组件。The present application also provides a method for mass transfer of miniature light-emitting diodes, which adopts a fluid-assembled imprinted stamp substrate having a planar top surface, on which a plurality of bottoms having a first peripheral shape, depth and plane are formed. The capture location on the surface. Through a fluid assembly process, the trapping site may be filled with micro-LEDs having a first perimeter shape, the micro-LED having a thickness greater than the depth of the trapping site, a bottom surface in contact with a bottom surface of the trapping site, a plane The top surface and the first electrode extending out of the capture location, and a securing mechanism. On the one hand, the fixing mechanism is a keel formed on the top surface of the miniature light-emitting diode. The keel can be a conductive keel connected to the first electrode, or it can be fixed on the substrate of the embossed stamp. Temporary non-conductive studs that are later removed. On the other hand, the fixing mechanism is a first component including a pair of conjugated biomolecules disposed on the bottom surface of each micro LED. In this case, the bottom surface of each capture site is provided with a second component comprising pairs of conjugated biomolecules.

如上所述,该方法提供一具有平面的顶表面以及微型发光二极管连接垫阵列的显示基板,每一微型发光二极管连接垫包括形成于顶表面的第一电极,该第一电极与其基板下方的列和行控制线的矩阵电连接。所述显示基板相邻的阱之间的间距与所述压印印章基板相邻的捕集位置的间距相匹配。该方法压印将印章基板的顶表面压靠到显示基板的顶表面,使每一捕集位置填充有一微型发光二极管,并且将多个微型发光二极管从压印印章基板转移到显示基板的微型发光二极管连接垫上。同样,在转移过程中,可以对显示基板加热,从而促进电极绑定。As described above, the method provides a display substrate having a planar top surface and an array of micro-LED connection pads, each micro-LED connection pad includes a first electrode formed on the top surface, the first electrode and the column below the substrate and the matrix of row control lines are electrically connected. The spacing between the adjacent wells of the display substrate matches the spacing of the trapping sites adjacent to the embossed stamp substrate. The method embossing presses the top surface of the stamp substrate against the top surface of the display substrate, fills each trapping site with a micro LED, and transfers the micro LEDs from the embossed stamp substrate to the micro light emitting diodes of the display substrate. Diode connection pad. Also, during the transfer process, the display substrate can be heated to facilitate electrode binding.

本申请还提供一种轴向微型发光二极管巨量转移方法。该方法提供一种具有平面的顶表面的流体组装压印印章基板,所述顶表面上形成有多个捕集位置,所述捕集位置具有一第一周边形状、一具有平面的第一深度的中心部分、一具有平面的第二深度的远端(所述第二深度小于所述第一深度)和一具有平面的第二深度的近端。通过流体组装流程,该方法使轴向微型发光二极管填充至捕集位置中,每一占据相应捕集位置的微型发光二极管具有所述第一周边形状、一与所述中心部分连接的主体、并具有一垂直平面主体,所述主体厚度大于所述第一深度但小于二倍所述第一深度。一远端电极水平平分所述主体并且与所述捕集位置的远端接触,所述远端电极的垂直平面的电极厚度大于所述捕集位置的第二深度但小于二倍所述第二深度。一近端电极具有与所述远端电极相同的厚度,水平平分所述主体并与所述捕集位置的近端接触。The present application also provides a mass transfer method of axial miniature light emitting diodes. The method provides a fluid assembled imprint stamp substrate having a planar top surface, the top surface having a plurality of capture sites formed thereon, the capture sites having a first perimeter shape, a first depth having a planar surface A central portion, a distal end having a planar second depth, the second depth being less than the first depth, and a proximal end having a planar second depth. Through a fluid assembly process, the method enables axial micro-LEDs to be filled into trapping locations, each micro-LED occupying a respective trapping location having said first peripheral shape, a body connected to said central portion, and It has a vertical plane main body, and the thickness of the main body is greater than the first depth but less than twice the first depth. a distal electrode that bisects the body horizontally and is in contact with the distal end of the trapping site, the distal electrode having an electrode thickness in a vertical plane that is greater than a second depth of the trapping site but less than twice the second depth of the trapping site. depth. A proximal electrode has the same thickness as the distal electrode, horizontally bisects the body and contacts the proximal end of the capture site.

该方法提供一种具有平面的顶面以及微型发光二极管连接垫阵列的显示基板,每一微型发光二极管连接垫包括形成于顶表面并与其下方的列和行控制线的矩阵电连接的一对电极。所述显示基板具有一分离相邻阱的间距,该间距与分离所述压印印章基板上相邻捕集位置的间距相匹配。该方法将压印印章基板的顶表面压靠在显示基板的顶表面上,使每一捕集位置与一相应的微型发光二极管接触,并且将微型发光二极管从压印印章基板上转移到显示器基板上,通常还需要进行加热以促进电极的绑定。The method provides a display substrate having a planar top surface and an array of micro-LED connection pads, each micro-LED connection pad comprising a pair of electrodes formed on the top surface and electrically connected to a matrix of column and row control lines below it . The display substrate has a pitch separating adjacent wells that matches the pitch separating adjacent trapping sites on the imprinted stamp substrate. The method presses the top surface of the embossed stamp substrate against the top surface of the display substrate, brings each capture site into contact with a corresponding micro LED, and transfers the micro LEDs from the embossed stamp substrate to the display substrate Above, heating is usually also required to facilitate binding of the electrodes.

下面将对上述的系统和方法进行具体描述。The above-mentioned system and method will be described in detail below.

附图说明Description of drawings

图1A-图1C为基于GaN LED的截面图(图1A)、两个垂直微型发光二极管的截面图(图1B)和一个表面贴装微型发光二极管的截面图(图1C)(现有技术)。Figures 1A-1C are a cross-sectional view of a GaN-based LED (Fig. 1A), a cross-sectional view of two vertical micro-LEDs (Fig. 1B), and a cross-sectional view of a surface-mount micro-LED (Fig. 1C) (prior art) .

图2A为使用激光剥离技术从蓝宝石生长衬底上移除微型发光二极管的过程(现有技术)。FIG. 2A is a process of removing micro-LEDs from a sapphire growth substrate using laser lift-off technology (prior art).

图2B为将器件从载体晶圆上移动并定位到显示基板上的拾放过程(现有技术)。FIG. 2B is a pick-and-place process for moving and positioning devices from a carrier wafer onto a display substrate (prior art).

图2C为将微型发光二极管的阳极与基板电极连接的过程(现有技术)。FIG. 2C is a process of connecting the anode of the micro LED to the substrate electrode (prior art).

图3A-图3H为一种示例性的巨量转移过程的步骤(现有技术)。3A-3H are steps of an exemplary bulk transfer process (prior art).

图4A-图4B为在一100mm晶圆上使用14mm压印印章进行压印拾取的覆盖区域示例(图4A),此时晶圆上留有20%的微型发光二极管,并且有三个压印印章上的微型发光二极管带有缺陷(图4B)(现有技术)。Figures 4A-4B are examples of footprints for imprint pick-up using 14mm imprint stamps on a 100mm wafer (Figure 4A), leaving 20% of the micro LEDs on the wafer and three imprint stamps The micro-LEDs on the chip have defects (FIG. 4B) (prior art).

图5为展示表面贴装微型发光二极管和控制微型发光二极管亮度的功率晶体管的典型背板布置的部分截面图。5 is a partial cross-sectional view of a typical backplane arrangement showing a surface mount micro-LED and a power transistor controlling the brightness of the micro-LED.

图6A-图6B分别为用于流体组装的表面贴装微型发光二极管的俯视图和截面图。6A-6B are respectively a top view and a cross-sectional view of a surface-mount micro-LED for fluid assembly.

图7为选择性拾取后微型发光二极管晶圆的示意图。FIG. 7 is a schematic diagram of a micro-LED wafer after selective pickup.

图8为流体效应的简短描述,可以使100%的微型发光二极管以电极向下的正确方向组装。Figure 8 is a short description of the fluid effect that allows 100% of micro LEDs to be assembled in the correct orientation with electrodes down.

图9A-图9D为使用微型发光二极管巨量转移压印系统的步骤。9A-9D are the steps of using the micro-LED mass transfer imprinting system.

图10A-图10D为将微型发光二极管从一载体衬底转移至显示基板的过程的截面图。10A-10D are cross-sectional views of the process of transferring micro-LEDs from a carrier substrate to a display substrate.

图11A-图11D为压印系统的示意图,其中微型发光二极管为垂直微型发光二极管。11A-11D are schematic diagrams of an imprinting system, wherein the micro LEDs are vertical micro LEDs.

图12A-图12B为用于辅助将微型发光二极管固定到载体衬底的捕集位置的吸引力产生器的部分截面图。12A-12B are partial cross-sectional views of an attractive force generator used to assist in securing a micro LED to a trapping location on a carrier substrate.

图13A-图13K为使用流体组装压印印章基板的微型发光二极管巨量转移压印系统的步骤示意图。13A-13K are schematic diagrams of the steps of the micro-LED mass transfer imprinting system using fluid assembly imprinting stamp substrates.

图14A和图14B分别为使用静电力产生器和使用磁力产生器作为辅助装置,协助微型发光二极管固定到流体组装捕集位置的示意图。14A and 14B are schematic diagrams of using an electrostatic force generator and a magnetic force generator as an auxiliary device, respectively, to assist in fixing the micro LEDs to the fluid assembly and trapping position.

图15A-图15I为使用流体压印以及轴向微型发光二极管的微型发光二极管巨量转移系统的示意图。15A-15I are schematic diagrams of a micro-LED mass transfer system using fluid imprinting and axial micro-LEDs.

图16为与图9A-图9D所示系统对应的微型发光二极管巨量转移法的流程图。FIG. 16 is a flow chart of a mass transfer method for micro-LEDs corresponding to the system shown in FIGS. 9A-9D .

图17为图13A-图13K所示的使用流体组装压印印章基板的微型发光二极管巨量转移法的流程图。FIG. 17 is a flow chart of the mass transfer method for micro-LEDs shown in FIGS. 13A-13K using fluidic assembly of imprinted stamp substrates.

图18为图15A-图15I所示的轴向(引线)微型发光二极管巨量转移法的流程图。FIG. 18 is a flow chart of the axial (lead) micro-LED mass transfer method shown in FIGS. 15A-15I .

图19为微型发光二极管传输时间距拓展方法的流程图。FIG. 19 is a flow chart of a method for extending the transmission time distance of micro light emitting diodes.

主要元件符号说明Description of main component symbols

压印印章 900、900a、900b、900c、1300、1500Embossed stamp 900, 900a, 900b, 900c, 1300, 1500

压印印章顶表面 902、1302、1502Imprint Stamp Top Surface 902, 1302, 1502

捕集位置 904、1304、1504Trap position 904, 1304, 1504

龙骨 906Keel 906

微型发光二极管底表面 908Micro LED bottom surface 908

微型发光二极管 910Micro LED 910

表面贴装微型发光二极管 910a、910b、910cSurface Mount Miniature Light Emitting Diodes 910a, 910b, 910c

微型发光二极管顶表面 912Micro LED top surface 912

第一电极 914、1316First electrode 914, 1316

第二电极 916、1324Second electrode 916, 1324

显示基板 918、1315、1318、1525Display Substrate 918, 1315, 1318, 1525

载体衬底 1000、1000a、1000b、1000cCarrier substrate 1000, 1000a, 1000b, 1000c

载体衬底顶表面 1002Carrier substrate top surface 1002

阱 1004Well 1004

间距 1006Pitch 1006

载体衬底底表面 1008Carrier substrate bottom surface 1008

加热装置 1010Heating device 1010

垂直微型发光二极管 1100Vertical Micro LED 1100

垂直微型发光二极管顶表面 1102Vertical Micro LED Top Surface 1102

垂直微型发光二极管第一电极 1104Vertical Micro LED First Electrode 1104

绝缘层 1106Insulation layer 1106

静电力产生器 1200、1400Electrostatic Force Generator 1200, 1400

磁力产生器 1202、1402Magnetic generator 1202, 1402

深度 1306Depth 1306

捕集位置底表面 1308Capture location bottom surface 1308

微型发光二极管厚度 1310Micro LED thickness 1310

微型发光二极管底表面 1312Micro LED bottom surface 1312

微型发光二极管顶表面 1314Micro LED top surface 1314

凹槽 1320groove 1320

硫醇生物素双功能分子/第一组分 1322Thiol Biotin Bifunctional Molecule/First Component 1322

ACF 1325ACF 1325

二氧化硅膜 1326Silica film 1326

链霉亲和素分子/第一组分 1327Streptavidin molecule/first component 1327

中心部分 1506Centerpiece 1506

第一深度 1508First Depth 1508

远端 1510remote 1510

第二深度 1512Second Depth 1512

近端 1514proximal 1514

轴向微型发光二极管 1516Axial Micro LED 1516

主体 1518Subject 1518

主体厚度 1520Body Thickness 1520

远端电极 1522Distal electrode 1522

电极厚度 1524Electrode thickness 1524

近端电极 1526Proximal electrode 1526

电极 1528Electrodes 1528

电介质薄膜 1530Dielectric film 1530

主体凹槽 1532Body groove 1532

P连接垫 1534P connection pad 1534

N连接垫 1536N connection pad 1536

第一凹槽 1538First Groove 1538

如下具体实施方式将结合上述附图进一步说明本申请。The following specific embodiments will further illustrate the present application in conjunction with the above-mentioned drawings.

具体实施方式Detailed ways

美国专利9,825,202和10,418,527已经报告了使用无机LED和显示背板上的流体组装来制作微型发光二极管显示器的一般过程,这些专利通过引用结合在此。特别地,美国9,825,202从13列26行开始描述了制造合适的显示屏背板的工艺流程,如图17所示。其电气要求在未公开的专利申请16/727,186中进行了描述,该专利也包含在本文中以供参考。此处使用的显示基板具有与专利9,825,202中图14B和图14C描述的相同的行和列排列以及薄膜晶体管(TFT)电路,但没有阱层,因为巨量转移压印印章设置了微型发光二极管的位置。US Patents 9,825,202 and 10,418,527, which are hereby incorporated by reference, have reported a general process for fabricating miniature light-emitting diode displays using inorganic LEDs and fluidic assembly on a display backplane. In particular, US 9,825,202 describes the process flow for manufacturing a suitable display backplane starting from column 13 and line 26, as shown in FIG. 17 . Its electrical requirements are described in unpublished patent application 16/727,186, which is also incorporated herein by reference. The display substrate used here has the same row and column arrangement and thin-film transistor (TFT) circuitry as described in Figures 14B and 14C of patent 9,825,202, but without the well layer because the mass transfer imprint stamp sets the micro-LED's Location.

图5为展示表面贴装微型发光二极管和控制微型发光二极管亮度的功率晶体管的典型背板布置的部分截面图。5 is a partial cross-sectional view of a typical backplane arrangement showing a surface mount micro-LED and a power transistor controlling the brightness of the micro-LED.

美国专利9,825,202、10,418,527和10,543,486(在此引用)所提出的流体组装技术适用于直接随机组装的低成本的微型发光二极管显示器制造。这里使用了相同的组装技术来制备一个压印印章,用于轮流将微型发光二极管绑定到显示基板的电极上。与直接的流体组装策略相比,这种方法的优点是,通过在绑定过程中使用压印印章并施加压力,有助于微型发光二极管与显示器之间形成欧姆接触。如本文所使用的,转移压印印章被设置为具有阵列分布的捕集位置,使捕集位置之间的间距与显示器像素之间的间距匹配。所述压印印章可以由玻璃、石英或者单晶硅制成,以及捕集位置(也被称为阱)可以通过蚀刻压印印章或在压印印章上设置一层膜,例如图案化的聚酰亚胺,并使用光刻技术图案化出阱来制成。捕集位置与微型发光二极管具有相同的形状,并可能比美国专利10,804,426图8所示的稍大一些,该专利通过引用结合在此。本文所述系统的独特之处在于,捕集位置的深度可能小于微型发光二极管厚度的至少一个点,因此微型发光二极管可以在不受到压印印章顶表面的干扰的情况下接触组装工具或显示基板。蚀刻在压印印章上的阱(捕集位置)可以更稳固,从而可以更加彻底的清洗,但对捕集位置深度的控制会变得更困难。相反,形成在聚酰亚胺或一沉积膜上的捕集位置的深度可以通过膜的厚度进行控制,但是更容易受损。The fluidic assembly techniques proposed in US Patent Nos. 9,825,202, 10,418,527 and 10,543,486 (herein cited) are suitable for direct random assembly of low-cost miniature LED display fabrication. Here the same assembly technique was used to prepare an embossed stamp for in turn bonding micro-LEDs to the electrodes of the display substrate. The advantage of this approach over direct fluidic assembly strategies is that it facilitates the formation of ohmic contacts between the micro-LEDs and the display by using an imprint stamp and applying pressure during the bonding process. As used herein, a transfer stamp is configured to have capture sites distributed in an array such that the pitch between capture sites matches the pitch between pixels of a display. The embossed stamp can be made of glass, quartz or single crystal silicon, and the trapping sites (also called wells) can be formed by etching the imprinted stamp or placing a film on the imprinted stamp, such as a patterned polymer. imide and pattern the wells using photolithographic techniques. The trapping sites have the same shape as the miniature LEDs and may be slightly larger than that shown in Figure 8 of US Patent 10,804,426, which is hereby incorporated by reference. The system described here is unique in that the depth of the trapping location can be less than at least one point in the thickness of the micro-LED, so that the micro-LED can contact the assembly tool or display substrate without interference from the top surface of the embossed stamp . The traps (trap sites) etched on the imprinted stamp can be more robust, allowing for more thorough cleaning, but control of the depth of the trap sites becomes more difficult. In contrast, the depth of trapping sites formed on polyimide or a deposited film can be controlled by the thickness of the film, but is more susceptible to damage.

本申请所述的压印系统兼容多种配置的微型发光二极管,但如图2C所示的传统的LED结构并不适用,因为其缺少了一种用于在流体组装中进行定位的装置,因此电极不能正确定位到显示基板上以进行绑定。美国专利10,804,426中描述的圆盘形表面贴装微型发光二极管被设计为在一定范围内的解决方案,约束于美国专利9,825,202所描述的流体组装中,如12列56行和图16所示,因此这些设备被应用于描述本申请所述的压印系统。需要明白的是,其他的微型发光二极管形状,如方形、矩形和三角形的器件,如美国专利9,825,202的图8以及美国专利10,516,084的图4(通过引用结合在此),可以以相同的方式使用。同样地,所述压印系统不限于表面贴装微型发光二极管。垂直微型发光二极管同样可以使用此方法,采用单个底部电极,并在组装后加工制作顶部电极。这些变化对于本领域的技术人员来说是显而易见的,考虑到简洁性,本申请对此不再进行过多描述。The imprinting system described in this application is compatible with various configurations of micro-LEDs, but the traditional LED structure shown in Figure 2C is not suitable because it lacks a device for positioning in fluid assembly, so Electrodes are not properly positioned on the display substrate for bonding. The disk-shaped surface-mounted micro-LEDs described in US Patent 10,804,426 are designed as a solution within a certain range, constrained in the fluid assembly described in US Patent 9,825,202, as shown in 12 columns and 56 rows and Figure 16, so These devices were used to describe the imprinting system described in this application. It should be understood that other microLED shapes, such as square, rectangular and triangular devices, such as Figure 8 of US Patent 9,825,202 and Figure 4 of US Patent 10,516,084 (herein incorporated by reference), can be used in the same manner. Likewise, the stamping system is not limited to surface mount miniature LEDs. Vertical micro-LEDs can also use this approach, using a single bottom electrode and machining the top electrode after assembly. These changes are obvious to those skilled in the art, and in consideration of brevity, the present application will not describe them too much.

图6A和图6B分别描述了一个用于流体组装的表面贴装微型发光二极管的俯视图和截面图。该器件的结构通常为直径20-100微米(μm),厚度为4-6μm,并包括一高度为5-10μm的龙骨。在这种情况下,阱深通常为3.5-4.5μm来适应微型发光二极管的厚度。详细的制造工艺流程可以参阅美国专利10/804,426的8列56行以及图6。圆盘的形状与捕集位置的圆柱形匹配,捕集位置的深度通常小于微型发光二极管的厚度,其直径略大于微型发光二极管的直径。表面贴装电极通常由锡/铟或金/锗等焊料制作,P连接垫和N连接垫的绑定表面必须位于同一平面上以便于接触。6A and 6B respectively depict a top view and a cross-sectional view of a surface-mount micro-LED for fluid assembly. The structure of the device is typically 20-100 micrometers ([mu]m) in diameter, 4-6 [mu]m thick, and includes a keel with a height of 5-10 [mu]m. In this case, the well depth is usually 3.5-4.5 μm to accommodate the thickness of the micro LEDs. For the detailed manufacturing process flow, please refer to the 8 columns and 56 rows of US Patent No. 10/804,426 and FIG. 6 . The shape of the disk matches the cylindrical shape of the trapping site, the depth of the trapping site is usually smaller than the thickness of the micro-LEDs, and its diameter is slightly larger than that of the micro-LEDs. Surface mount electrodes are usually made of solder such as tin/indium or gold/germanium, and the bonding surfaces of the P connection pad and the N connection pad must be on the same plane for easy contact.

图7描述了选择性拾取后的微型发光二极管晶圆。通过光学显微镜,扫描电子显微镜(Scanning Electron Microscope,SEM)图像,阴极发光或光致发光来识别缺陷。其目的是识别出所有可能导致显示像素错误的缺陷,这样就可以将带有缺陷的产品从用于制造的微型发光二极管悬浮液中去除。将缺陷图与已知的图案如边缘珠状图和排列结构结合,就可以得到所有已知的带有缺陷的微型发光二极管的位置。使用印刷工艺,将带有缺陷的微型发光二极管使用捕获材料覆盖,以避免他们被拾取。如图所示,选择性的拾取压印印章过程将获得所有合格的微型发光二极管并留下带有缺陷的微型发光二极管。将高利用率与防止缺陷器件混入相结合是流体组装技术的一个显著优点。选择性拾取方法在未公开的申请号为16,875,994的申请文件中有更加详细的描述,本申请通过引用结合在此。Figure 7 depicts a micro LED wafer after selective pickup. Defects are identified by optical microscopy, Scanning Electron Microscope (SEM) images, cathodoluminescence or photoluminescence. The aim is to identify all defects that could cause errors in display pixels, so that defective products can be removed from the suspension of micro-LEDs used for manufacturing. Combining the defect map with known patterns such as edge bead patterns and alignment structures, all known locations of defective micro-LEDs can be obtained. Using a printing process, the tiny LEDs with defects are covered with a trapping material to prevent them from being picked up. As shown, the selective pickup imprint stamp process will get all good Micro LEDs and leave the defective Micro LEDs. Combining high utilization with the prevention of defective device mix-in is a significant advantage of fluidic assembly technology. Selective picking methods are described in more detail in unpublished application number 16,875,994, which is incorporated herein by reference.

在微型发光二极管制作完成后,生长晶圆经由一粘合胶层附着在一载体晶圆上,通过激光剥离(LLO)技术将微型发光二极管从蓝宝石晶圆上剥离出来,并在微型发光二极管的底表面上图案化龙骨。After the micro-LEDs are fabricated, the growth wafer is attached to a carrier wafer through an adhesive layer, and the micro-LEDs are peeled off from the sapphire wafer by laser lift-off (LLO) technology, and placed on the micro-LEDs. Patterned keel on bottom surface.

将微型发光二极管悬浮液分散在载体衬底上,并按照美国专利10,418,527和美国专利10,804,426的图7中的描述进行组装。对于巨量转移法来说,避免表面污染物干扰微型发光二极管露出的表面以及目标位置的表面是十分重要的。因此,表面上任何未组装的多余的微型发光二极管会被移除,并且在组装后进行回收,因此有效的清洗方法也十分重要。The micro LED suspension was dispersed on a carrier substrate and assembled as described in Figure 7 of US Patent 10,418,527 and US Patent 10,804,426. For mass transfer methods, it is important to avoid surface contamination from interfering with the exposed surface of the micro-LEDs and the surface at the target site. Therefore, any unassembled superfluous micro-LEDs on the surface are removed and recycled after assembly, so effective cleaning methods are also very important.

图8对流体效应进行了一个简单的概述,该效应使100%的微型发光二极管能够以电极向下的正确方向进行组装。组装好的基板会被检查,如果一些阱位没有被填充,或者存在其他缺陷如多余的未组装的微型发光二极管,只需用溶剂清洗压印印章来移除微型发光二极管,并将溶剂捕获至储存器中以回收微型发光二极管。空的压印印章会被进一步清洗、干燥并检查,以确保在捕集位置上没有表面污染或残留物。这种能力对于使用弹性体或粘合胶来固定微型发光二极管的传统压印印章是十分重要的,因为其难以进行清洗和再利用。在传统技术下,有污染或者缺失微型发光二极管的压印印章通常会被丢弃,从而导致压印印章上完好的微型发光二极管无法被回收。Figure 8 provides a simple overview of the fluidic effect that enables 100% of micro LEDs to be assembled in the correct orientation with electrodes down. Assembled substrates are inspected, and if some wells are not filled, or there are other defects such as redundant unassembled micro-LEDs, simply clean the imprint stamp with solvent to remove the micro-LEDs and trap the solvent into the Storage to recover micro LEDs. Empty imprinted stamps are further cleaned, dried and inspected to ensure that there is no surface contamination or residue at the capture location. This capability is important for traditional imprint stamps that use elastomers or adhesives to hold micro-LEDs, which are difficult to clean and reuse. Under traditional technology, imprinted stamps with contamination or missing micro-LEDs are usually discarded, resulting in the inability to recycle the intact micro-LEDs on the imprinted stamp.

图9A-图9D描述了微型发光二极管巨量转移压印系统的使用步骤。该系统包括一具有顶表面902的压印印章基板900。顶表面902上形成有阵列分布的压印印章基板捕集位置904。每一捕集位置904被配置为柱状凹槽,从而临时固定从一微型发光二极管910的底表面908延伸出的龙骨906。如图所示,微型发光二极管910为表面贴装微型发光二极管,每一微型发光二极管910包括一平面的顶表面912,顶表面912上设有第一电极914和第二电极916。在这种情况下,龙骨906不导电。在这个特殊的例子中,如图6A所示,第二电极为围绕第一电极的一个整环或部分环。对于图9A-图9D或图11A-图11D(见下文)的系统,可以使用粘合胶或弹性体在压印印章基板顶表面902上进行图案化,来促使微型发光二极管附着到一捕集位置上。9A-9D describe the steps of using the micro-LED mass transfer imprinting system. The system includes an imprint stamp substrate 900 having a top surface 902 . An array of embossed stamp substrate capture locations 904 is formed on the top surface 902 . Each trapping location 904 is configured as a columnar groove to temporarily hold the keel 906 extending from the bottom surface 908 of a micro LED 910 . As shown in the figure, the micro LEDs 910 are surface mount micro LEDs, and each micro LED 910 includes a planar top surface 912 , and a first electrode 914 and a second electrode 916 are disposed on the top surface 912 . In this case, the keel 906 is not conductive. In this particular example, as shown in Figure 6A, the second electrode is a full or partial ring surrounding the first electrode. For the systems of Figures 9A-9D or Figures 11A-11D (see below), adhesive glue or elastomers can be used to pattern the stamp substrate top surface 902 to facilitate attachment of the miniature LEDs to a trap. position.

填充好的载体衬底1000是使用压印印章基板900向显示基板918进行巨量转移的基础,图中以单个微型发光二极管进行说明。尽管图中没有明确展示,但显示基板的电极连接垫连接到一个由行列线构成的网络从而使微型发光二极管工作是显而易见的,具体细节请参考美国专利9,825,202。在这种情况下,载体衬底1000为带有阱的平面的表面基板,可以使压印印章头捕集位置904附近的局部凸起(可选为粘合胶或弹性体)接触到每一微型发光二极管(如图9B所示)。由于微型发光二极管通常仅靠重力固定在载体中,相对较弱的附着力会使微型发光二极管在转移过程中通过可选的粘合胶或弹性体从载体中移除。压印印章与显示基板上的电极对齐,并进行压合,使微型发光二极管的电极与显示基板上的电极之间形成硬接触,同时通过加热形成焊料绑定(图9C)。在另一实施例中,连接可以由一额外的ACF膜进行(图未示)。当绑定完成时,转移压印印章会被回收并与微型发光二极管脱离(图9D)。转移头900和载体衬底1000会被清洗以重复使用,并循环操作从而填充显示基板918的全部区域。The filled carrier substrate 1000 is the basis for mass transfer to the display substrate 918 using the imprint stamp substrate 900, illustrated in the figure as a single miniature LED. Although not explicitly shown in the figure, it is obvious that the electrode connection pads of the display substrate are connected to a network of row and column lines to make the miniature LEDs work. For details, please refer to US Patent 9,825,202. In this case, the carrier substrate 1000 is a planar surface substrate with wells that allow localized protrusions (optionally adhesive or elastomer) near the capture location 904 of the imprint stamp head to contact each Micro LEDs (as shown in Figure 9B). Since the micro-LEDs are usually fixed in the carrier only by gravity, the relatively weak adhesion will cause the micro-LEDs to be removed from the carrier by optional adhesive glue or elastomer during the transfer process. The embossed stamp is aligned with the electrodes on the display substrate and press-fitted to form a hard contact between the electrodes of the micro-LEDs and the electrodes on the display substrate, while heating forms a solder bond (Figure 9C). In another embodiment, the connection can be made by an additional ACF membrane (not shown). When binding is complete, the transfer imprint stamp is recovered and detached from the micro-LEDs (Fig. 9D). The transfer head 900 and the carrier substrate 1000 are cleaned for reuse and cycled to fill the entire area of the display substrate 918 .

图10A-图10D为描述微型发光二极管从载体衬底转移到显示基板的过程的截面图。该系统包括流体组装载体衬底1000a-1000c,其具有一平面的顶表面1002以及阵列排布在载体衬底顶表面1002的阱1004,相邻阱之间具有间距1006,间距1006与分隔开压印印章基板上相邻捕集位置的间距相匹配。载体衬底的阱1004具有第一周边形状(在本实施例中为圆形)以及平面的阱底面1008。表面贴装微型发光二极管910a-910c均具有第一周边形状以及平面的顶表面912,从而通过第一电极914和第二电极916与阱底面1008接触(如图9A所示)。10A-10D are cross-sectional views describing the process of transferring micro-LEDs from a carrier substrate to a display substrate. The system includes a fluid assembled carrier substrate 1000a-1000c having a planar top surface 1002 and an array of wells 1004 arranged on the top surface 1002 of the carrier substrate with a spacing 1006 between adjacent wells, the spacing 1006 being separated from The spacing of adjacent trapping sites on the embossed stamp substrate was matched. The well 1004 of the carrier substrate has a first peripheral shape (circular in the exemplary embodiment) and a planar well bottom 1008 . Surface mount miniature LEDs 910a-910c each have a first perimeter shape and a planar top surface 912 to contact the well bottom surface 1008 through a first electrode 914 and a second electrode 916 (as shown in FIG. 9A).

在RGB显示的情况下,压印系统可以进一步包括第一流体组装载体衬底1000a,以及设于载体衬底顶表面的阵列分布的阱,相邻阱之间具有间距1006从而与压印印章基板的捕集位置相匹配(图10B)。微型发光二极管910a被配置为发出第一波长的光,每个微型发光二极管在第一载体衬底1000a中占据相应的阱。同样的,第二流体组装载体衬底1000b包括设于载体衬底顶表面的阵列分布的阱,相邻阱之间具有间距1006从而与压印印章基板的捕集位置相匹配。微型发光二极管910b被配置为发出第二波长的光,每一微型发光二极管在第二载体衬底1000b中占据相应的阱。第三流体组装载体衬底1000c包括设于载体衬底顶表面的阵列分布的阱,相邻阱之间具有间距1006从而与压印印章基板的捕集位置相匹配。微型发光二极管910c被配置为发出第三波长的光,每一微型发光二极管在第三载体衬底1000c中占据相应的阱。In the case of an RGB display, the imprinting system may further include a first fluid assembly carrier substrate 1000a, and an array of wells disposed on the top surface of the carrier substrate with a spacing 1006 between adjacent wells so as to be compatible with the imprinted stamp substrate The trapping position matches that of the (Fig. 10B). The micro light emitting diodes 910a are configured to emit light at a first wavelength, each micro light emitting diode occupying a corresponding well in the first carrier substrate 1000a. Likewise, the second fluid-assembled carrier substrate 1000b includes an array of wells disposed on the top surface of the carrier substrate with a spacing 1006 between adjacent wells to match the trapping positions of the embossed stamp substrate. The micro light emitting diodes 910b are configured to emit light of the second wavelength, each micro light emitting diode occupying a corresponding well in the second carrier substrate 1000b. The third fluidic assembled carrier substrate 1000c includes an array of wells disposed on the top surface of the carrier substrate with a spacing 1006 between adjacent wells to match the trapping locations of the embossed stamp substrate. The micro light emitting diodes 910c are configured to emit light of the third wavelength, each micro light emitting diode occupying a corresponding well in the third carrier substrate 1000c.

为了制造RGB显示器所需的三种颜色,三种颜色的微型发光二极管需要依次进行组装和压印操作,如图10A-图10D所示。三种载体衬底上捕集位置阵列的设计会根据显示器像素的间距1006进行间隔。不同颜色的微型发光二极管的工艺流程或LED的性能差距有较大的可能决定了不同颜色的微型发光二极管具有不同尺寸和/或形状。举例来说,红色的微型发光二极管可以由铝铟镓磷(AlInGaP)制成,如美国专利10,804,426中所述,在这种情况下,红色的微型发光二极管可能比以GaN为基底的蓝色和绿色器件更厚。由于蓝色和绿色的微型发光二极管具有不同的量子效率,而人类视觉系统对绿色的敏感度更高,因此可能需要制造具有不同发射区域的蓝色和绿色微型发光二极管。这些差异的示例如图10A所示,每个载体衬底被调整以用来满足相应颜色的微型发光二极管的需求。压印印章基板900a从载体衬底上捕捉了阵列排布的蓝色微型发光二极管910a,并移动到显示基板918上,使压印印章900a与显示基板上的空置区域对齐并将微型发光二极管的电极与显示基板上相匹配的电极进行物理接触(图10B)。压力与加热装置1010被用于加强电极之间的紧密接触,从而使金属材料熔化并形成焊料绑定。在图10C和图10D中,绿色微型发光二极管910b和红色微型发光二极管910c以相同的方式被转移和绑定(压印印章900b、压印印章900c)。微型发光二极管与连接垫之间的绑定可能会使用诸如金/锗对应到铜、铟/锌对应到铜以及金/ACF/铜等材料。如果使用了ACF,则显示电极的材料可以有更广泛的选择,如Mo/Al/Mo。In order to manufacture the three colors required for RGB displays, the micro-LEDs of the three colors need to be assembled and imprinted sequentially, as shown in FIGS. 10A-10D . The design of the array of trapping sites on the three carrier substrates will be spaced according to the pitch 1006 of the display pixels. The process flow of micro light emitting diodes of different colors or the performance gap of LEDs may determine that the micro light emitting diodes of different colors have different sizes and/or shapes. For example, red micro-LEDs can be made of aluminum indium gallium phosphide (AlInGaP), as described in US Patent 10,804,426, in which case the red micro-LEDs may be more efficient than GaN-based blue and Green devices are thicker. Since blue and green micro-LEDs have different quantum efficiencies, and the human visual system is more sensitive to green, it may be desirable to fabricate blue and green micro-LEDs with different emission regions. An example of these differences is shown in Figure 10A, where each carrier substrate is tuned to meet the requirements of the corresponding color micro-LEDs. The embossed stamp substrate 900a captures the blue micro-LEDs 910a arranged in an array from the carrier substrate, and moves them to the display substrate 918, aligning the embossed stamp 900a with the vacant area on the display substrate and aligning the micro-LEDs 910a. The electrodes make physical contact with matching electrodes on the display substrate (FIG. 10B). Pressure and heating means 1010 are used to enhance the intimate contact between the electrodes, thereby melting the metallic material and forming a solder bond. In FIG. 10C and FIG. 10D , green micro-LEDs 910b and red micro-LEDs 910c are transferred and bonded in the same way (stamp 900b, stamp 900c). Bonding between micro LEDs and connection pads may use materials such as gold/germanium to copper, indium/zinc to copper, and gold/ACF/copper. If ACF is used, the material of the display electrode can have a wider choice, such as Mo/Al/Mo.

本申请使用的流体组装在现有技术的简单压印进程上实现了几点改进:The fluid assembly used in this application achieves several improvements over the simple imprinting process of the prior art:

1)阵列图案中没有因为缺陷或缺少微型发光二极管而产生的缝隙;1) There are no gaps in the array pattern due to defects or lack of micro-LEDs;

2)选择性拾取和流体组装充分利用了一个晶圆上所有完好的微型发光二极管;2) Selective pick-up and fluid assembly fully utilizes all intact micro-LEDs on a wafer;

3)将组装过程中和有缺陷的载体衬底上回收微型发光二极管可以防止浪费;3) Recycling micro-LEDs during assembly and on defective carrier substrates can prevent waste;

4)载体衬底是根据显示器上捕集位置件的距离制造的,可以简单的完成间距的扩展。4) The carrier substrate is manufactured according to the distance of the capture position components on the display, and the expansion of the distance can be simply completed.

图11A-图11D描述了一个压印系统,其中的微型发光二极管为垂直微型发光二极管,每一垂直微型发光二极管1100具有设有第一电极1104的平面的顶表面1102,以及具有作为第二电极的导电的龙骨906。与表面贴装型微型发光二极管相同,载体衬底的阱1004具有第一周边形状(如圆形)以及一个平面的阱底面1008。每一垂直微型发光二极管1100均具有第一周边形状以及平面的顶表面1102,顶表面1102经由第一电极1104与对应的阱底面1008接触。Fig. 11A-Fig. 11D have described an embossing system, wherein micro light emitting diode is vertical micro light emitting diode, and each vertical micro light emitting diode 1100 has the top surface 1102 of the plane that is provided with first electrode 1104, and has as second electrode conductive keel 906. Same as the surface-mounted micro-LEDs, the well 1004 of the carrier substrate has a first peripheral shape (such as a circle) and a planar well bottom 1008 . Each vertical micro LED 1100 has a first peripheral shape and a planar top surface 1102 , the top surface 1102 is in contact with the corresponding well bottom surface 1008 via the first electrode 1104 .

对于较小的微型发光二极管来说,不能像表面贴装微型发光二极管一样有足够的空间在同一表面上制作两个电极,相同的组装过程也可以应用在垂直微型发光二极管上。在这种情况下,微型发光二极管被设置为顶表面具有单一的阳电极,底表面的阴电极为导电柱(龙骨)或在底表面上电镀金或铜。所述导电柱还可以作为在载体板(基板)上进行流体组装时的龙骨。For smaller Micro LEDs, there is not enough space to make two electrodes on the same surface like surface mount Micro LEDs, the same assembly process can also be applied to vertical Micro LEDs. In this case, the micro LEDs are configured with a single anode electrode on the top surface and the cathode electrode on the bottom surface as a conductive post (keel) or gold or copper electroplated on the bottom surface. The conductive post can also serve as a keel during fluid assembly on a carrier plate (substrate).

展示了导电龙骨垂直微型发光二极管的组装和绑定顺序。通过上述的选择性获取方法制备微型发光二极管悬浮液,并将其分配到设有具有显示间距的阱的载体衬底表面上,然后按常规流程进行组装。压印印章与载体衬底对齐,并使微型发光二极管从载体衬底上移除,如图11A所示。填充的压印印章与显示基板对齐,并通过施加压力使得微型发光二极管上的阴极电极与显示基板上的P连接垫电极之间形成机械接触(如图11B所示)。使用加热装置1010来形成焊料绑定,然后取出压印印章并进行清洗和再利用。绝缘层1106,如聚酰亚胺,用于填充微型发光二极管与反射阱之间的空隙,以防止短路并使表面平面化以实现金属沉积(图11C)。龙骨从绝缘层1106中突出,形成连接到每一微型发光二极管上的自对准接触点,通过短O2等离子蚀刻来去除一部分绝缘层可以提高接触的效果。通过如图11D所示的图案化金属将微型发光二极管的导电柱连接至Vss(电源)从而形成电路。The assembly and binding sequence of the conductive keel vertical micro-LEDs is demonstrated. Micro-LED suspensions are prepared by the above-mentioned selective acquisition method and distributed on the surface of the carrier substrate provided with wells with display spacing, and then assembled according to the conventional procedure. The embossed stamp is aligned with the carrier substrate, and the micro LEDs are removed from the carrier substrate, as shown in FIG. 11A. The filled embossed stamp is aligned with the display substrate, and mechanical contact is formed between the cathode electrode on the micro LED and the P connection pad electrode on the display substrate by applying pressure (as shown in FIG. 11B ). The heating device 1010 is used to form the solder bond, and the imprint stamp is then removed and cleaned and reused. An insulating layer 1106, such as polyimide, is used to fill the gap between the micro LEDs and the reflective wells to prevent short circuits and planarize the surface for metal deposition (FIG. 11C). The keel protrudes from the insulating layer 1106 to form a self-aligned contact point connected to each micro-LED, and the contact effect can be improved by removing a part of the insulating layer by short O2 plasma etching. A circuit is formed by connecting the conductive pillars of the micro LEDs to Vss (power supply) through patterned metal as shown in FIG. 11D .

图12A和图12B为用于辅助将微型发光二极管固定到载体衬底的捕集位置的力产生器的部分截面图。其中图12A为使用静电力产生器1200,图12B为使用磁力产生器1202。尽管图示为表面贴装微型发光二极管,但上述力产生器也可以应用于垂直微型发光二极管。12A and 12B are partial cross-sectional views of a force generator used to assist in securing a micro-LED to a capture location on a carrier substrate. Wherein FIG. 12A uses an electrostatic force generator 1200 , and FIG. 12B uses a magnetic force generator 1202 . Although shown as surface mount miniature LEDs, the force generators described above can also be applied to vertical miniature LEDs.

图13A-图13K描述了使用流体组装压印印章基板的微型发光二极管巨量转移压印系统的步骤。为了进一步简化组装过程,可以使用流体组装直接填充压印印章,从而省略载体衬底。图6所示的微型发光二极管在底表面使用了龙骨结构,下面称为固定机构,从而使微型发光二极管与流体组装捕集位置的电极进行固定。对于直接组装工艺,电极位置必须在压印印章中“向上”,因此龙骨结构是在微型发光二极管的顶表面制造的,如图13A所示。以常规的方式进行流体组装,将微型发光二极管以阵列排布组装在捕集位置中,并使龙骨结构与电极均向上。用于制造龙骨结构的材料通常为可感光的聚酰亚胺,可以使用溶剂去除或使用氧等离子进行蚀刻。在组装并干燥后,将龙骨移除(如图13B所示),以便于将电极粘合到显示基板上。压印印章的制作方法与前述实施例相同,但阱结构必须不能受到去除龙骨的影响,因此不能使用有机薄膜,一种优选的方案为直接在基板上进行蚀刻以形成捕集位置结构。在重力和范德华力的作用下,压印印章可以容纳微型发光二极管,如果将压印印章倒置,微型发光二极管就会从压印印章中掉出来。因此在加热时需要将压印印章的表面朝上进行转移组装和绑定,并将显示基板下压在压印印章上(图13C)。13A-13K depict the steps of a micro-LED mass transfer imprinting system using fluidic assembly of imprinted stamp substrates. To further simplify the assembly process, the imprinted stamps can be filled directly using fluidic assembly, thereby omitting the carrier substrate. The micro-LED shown in FIG. 6 uses a keel structure on the bottom surface, which is referred to as a fixing mechanism below, so that the micro-LED and the electrode at the fluid assembly and trapping position are fixed. For the direct assembly process, the electrode position must be "up" in the stamping stamp, so the keel structure is fabricated on the top surface of the micro-LEDs, as shown in Figure 13A. Fluid assembly is carried out in a conventional manner, and the micro LEDs are assembled in an array arrangement in the trapping position, and the keel structure and the electrodes are both upward. The material used to make the keel structure is usually a photosensitive polyimide, which can be removed using solvents or etched using oxygen plasma. After assembly and drying, the keel is removed (as shown in FIG. 13B ) to facilitate bonding the electrodes to the display substrate. The manufacturing method of the embossed stamp is the same as the previous embodiment, but the well structure must not be affected by the removal of the keel, so organic thin films cannot be used. A preferred solution is to directly etch on the substrate to form the trapping position structure. Under the action of gravity and van der Waals forces, the imprinted stamp can accommodate micro-LEDs, which will fall out of the stamped stamp if it is turned upside down. Therefore, it is necessary to turn the surface of the embossed stamp up for transfer assembly and binding when heating, and press the display substrate down on the embossed stamp ( FIG. 13C ).

流体组装压印印章基板1300具有平面的顶表面1302。在压印印章基板顶表面1302上形成有阵列设置的捕集位置1304,每一捕集位置具有第一周边形状、一深度1306、以及一平面的捕集位置底表面1308。如前述实施例,第一周边形状为圆形,但该系统不局限于此形状。微型发光二极管910设于捕集位置1304中,具有第一周边形状、大于捕集位置深度1306的厚度1310、与底表面1308接触的平面的底表面1312、一具有第一电极1316并延伸出捕集位置的平面的顶表面1314、以及一保护机构(参下述解释)。所述微型发光二极管具有与垂直微型发光二极管1100相同的电连接关系,垂直微型发光二极管1100具有形成于底表面1312的第二电极(如图13D所示)或与一表面贴装微型发光二极管910相同的电连接关系,表面贴装微型发光二极管910具有形成在表面1314上的第一电极1316和第二电极1324(参图13A和图13E)。The fluid assembled imprint stamp substrate 1300 has a planar top surface 1302 . An array of trapping sites 1304 is formed on the top surface 1302 of the imprint stamp substrate, each trapping site has a first peripheral shape, a depth 1306 , and a planar trapping site bottom surface 1308 . As in the previous embodiments, the first peripheral shape is circular, but the system is not limited to this shape. The miniature light emitting diode 910 is arranged in the trap location 1304, has a first peripheral shape, a thickness 1310 greater than the trap location depth 1306, a planar bottom surface 1312 in contact with the bottom surface 1308, a first electrode 1316 extending out of the trap location. The planar top surface 1314 of the set position, and a protection mechanism (see explanation below). The micro LEDs have the same electrical connections as the vertical micro LEDs 1100, the vertical micro LEDs 1100 have a second electrode formed on the bottom surface 1312 (as shown in FIG. With the same electrical connection relationship, the surface mount micro LED 910 has a first electrode 1316 and a second electrode 1324 formed on the surface 1314 (see FIG. 13A and FIG. 13E ).

如图13A所示,固定机构为形成在微型发光二极管顶表面的龙骨906,龙骨906是临时的不导电的龙骨,龙骨906在微型发光二极管与显示基板1315接触之前会被移除。或者,如图13D和图13E所示,固定机构可以是连接到第一电极1316的导电的龙骨906,在图13D中,微型发光二极管为垂直的微型发光二极管1100。As shown in FIG. 13A , the fixing mechanism is a keel 906 formed on the top surface of the micro-LEDs. The keel 906 is a temporary non-conductive keel. The keel 906 will be removed before the micro-LEDs are in contact with the display substrate 1315 . Alternatively, as shown in FIG. 13D and FIG. 13E , the fixing mechanism can be a conductive keel 906 connected to the first electrode 1316 . In FIG. 13D , the micro LEDs are vertical micro LEDs 1100 .

在另一实施例中,在直接压印转移过程中使用导电的中心柱替代不导电的龙骨,是该结构既可以作为流体组装过程中的龙骨,也可以作为阳极电极(图13E)。在这种情况下,压印印章为带有阵列设置的捕集位置的简单盘子,捕集位置间距与显示器像素间距相同。显示基板1318中,P连接垫电极位于N连接垫电极的下方,为微型发光二极管上形成阳极电极的导电柱留出空间(图13F)。由于工艺的变化,可能会出现导电柱的高度和P连接垫凹槽的深度存在差异的情况,因此可以通过设置ACF1325来连接微型发光二极管和显示器基板,从而补偿这些差异。In another embodiment, a conductive center post is used in place of a non-conductive keel in a direct imprint transfer process, allowing the structure to serve both as a keel in a fluidic assembly process and as an anode electrode (FIG. 13E). In this case, the embossed stamp is a simple plate with an array of trapping sites arranged at the same pitch as the display pixels. In the display substrate 1318, the P connection pad electrode is located below the N connection pad electrode, leaving space for the conductive column forming the anode electrode on the micro LED (FIG. 13F). Due to process changes, there may be differences in the height of the conductive pillars and the depth of the groove of the P connection pad. Therefore, these differences can be compensated by setting the ACF1325 to connect the micro LEDs and the display substrate.

因此,图13E中的微型发光二极管是表面贴装的微型发光二极管910a,而图13F中的显示基板1318包括用于容纳导电龙骨906的凹槽1320。Thus, the micro-LEDs in FIG. 13E are surface-mounted micro-LEDs 910a, while the display substrate 1318 in FIG.

另一种在转移压印印章中定位和固定微型发光二极管的机构为利用共轭生物分子对(如链霉亲和素-生物素对)之间的优先连接。如图13G所示,在经过LLO之后,通过在器件1312的背面沉积一层薄的二氧化硅膜1326,从而制备出功能化的微型发光二极管。微型发光二极管的表面暴露于氢离子或碱性化合物中,然后与胺端分子如3-氨丙基三甲氧基硅烷(3-aminepropyl-trimethoxysilane)之间作用从而硅烷化。使用链霉亲和素溶液清洗表面,使链霉亲和素分子1327与胺端绑定,从而形成链霉亲和素功能化的微型发光二极管(如图13H所示)。在进行组装之前,可以使用生物素端配体对转移压印印章上的捕集位置进行类似的处理,或者阱底面可以为金制成的表面,并暴露于硫醇生物素双功能分子1322中,如图13I所示。Another mechanism for positioning and immobilizing micro-LEDs in transfer imprint stamps utilizes preferential linkage between pairs of conjugated biomolecules such as streptavidin-biotin pairs. As shown in FIG. 13G , after LLO, a thin silicon dioxide film 1326 is deposited on the backside of the device 1312 to fabricate a functionalized micro-LED. The surface of the micro-LEDs is exposed to hydrogen ions or alkaline compounds, and then interacts with amine terminal molecules such as 3-aminepropyl-trimethoxysilane (3-aminepropyl-trimethoxysilane) to be silanized. The surface was washed with a streptavidin solution to bind the streptavidin molecule 1327 to the amine end, thereby forming a streptavidin-functionalized miniature LED (as shown in FIG. 13H ). The trapping sites on the transfer imprint stamp can be similarly treated with biotin-terminal ligands prior to assembly, or the bottom of the well can be a surface made of gold and exposed to the thiol-biotin bifunctional molecule 1322 , as shown in Figure 13I.

因此,图13G-图13K描述了使用共轭生物分子对作为“固定机构”的微型发光二极管。其中,压印印章基板底表面1308上涂有包含共轭生物分子对的第一组分1322。微型发光二极管固定机构为涂布在每一微型发光二极管底表面1312的包括共轭生物分子对的第二组分1327。在组装过程中,相对低的捕集位置深度(约为1μm)可以通过流体扰动较为容易的移除定向错误的微型发光二极管,而定向正确的微型发光二极管可以通过化学方式绑定在捕集位置底表面,并通过约束在捕集位置中较好的标记。在图13J中,生物共轭键以极其放大的Z刻度(z scale)进行显示来说明绑定效果。实际上,绑定层非常薄,在图13K中的展示更为准确。替代示例的生物素-链亲和素系统的化学配对,如硫醇-马来酰亚胺和叠氮化物-炔,可能在稳定性和易于加工方面根据优势,但制备顺序是类似的。Thus, Figures 13G-13K describe miniaturized LEDs using pairs of conjugated biomolecules as "anchor mechanisms". Wherein, the bottom surface 1308 of the imprint stamp substrate is coated with a first component 1322 comprising a pair of conjugated biomolecules. The micro-LED fixing mechanism is the second component 1327 coated on the bottom surface 1312 of each micro-LED, which includes a pair of conjugated biomolecules. During the assembly process, the relatively low depth of the trapping site (about 1 μm) can easily remove the wrongly oriented micro-LEDs by fluid perturbation, while the correctly oriented micro-LEDs can be chemically bound to the trapping site. The bottom surface is better marked by constraints in the trapping position. In Figure 13J, the bioconjugated bonds are shown on a greatly enlarged z scale to illustrate binding effects. In fact, the binding layer is very thin and is more accurately shown in Figure 13K. Alternative chemical pairings of exemplary biotin-streptavidin systems, such as thiol-maleimide and azide-alkyne, may have advantages in terms of stability and ease of processing, but the sequence of preparation is similar.

图14A和图14B分别描述了使用静电力产生器1400和使用磁力产生器1402作为辅助机构,用于协助将微型发光二极管固定在流体组装捕集位置(有或没有龙骨)中。在图14A和图14B中,主要的固定机构可为重力。另外,在图14A中,固定机构为共轭的生物分子(图未示)。在其他实施例中(图未示),图14A中的力产生器也可以为磁力产生器,图14B中的力产生器也可以是静电力产生器。尽管图14A和图14B仅展示了流体组装压印印章基板,但应当理解,力产生器也可以用于图9B-图9D和图11A-图11B中的凹槽配置的压印印章基板。Figures 14A and 14B depict the use of an electrostatic force generator 1400 and a magnetic force generator 1402, respectively, as an auxiliary mechanism for assisting in securing the micro LEDs in a fluid assembly capture location (with or without keel). In Figures 14A and 14B, the primary fixation mechanism may be gravity. Additionally, in Figure 14A, the immobilization mechanism is a conjugated biomolecule (not shown). In other embodiments (not shown), the force generator in FIG. 14A can also be a magnetic force generator, and the force generator in FIG. 14B can also be an electrostatic force generator. Although FIGS. 14A and 14B only illustrate the fluid assembly of stamp substrates, it should be understood that the force generators can also be used with stamp substrates in the groove configurations of FIGS. 9B-9D and 11A-11B .

作为增加复杂性的代价,可以在压印印章结构中增加一些固定结构,用于防止在压印印章倒置时微型发光二极管从捕集位置上脱离。由于固定机构可以在绑定后从微型发光二极管上移除,因此使用粘合剂进行绑定的方式不具吸引力。通过在基板承载表面和捕集位置形成层之间设置多孔层,从而将真空条件引入到压印系统中,但流体组装的液体可能会流入多孔层中,导致无法进行干燥工作。压印印章中最实用的用于固定微型发光二极管的结构即为磁力或静电力结构。对于静电力固定,微型发光二极管具有沉积在与表面贴装电极相对应的表面上(即底表面)的介质膜,压印印章包括在捕集位置结构下方的动力电极。对于磁力固定,微型发光二极管电极结构可以包含一磁性材料,如镍,而压印印章上会有永久性磁铁或电磁铁。As a price for increased complexity, some fixing structures can be added to the embossed stamp structure to prevent the micro light emitting diodes from detaching from the trapping position when the embossed stamp is turned upside down. Bonding with adhesives is not attractive since the fixing mechanism can be removed from the micro LEDs after bonding. Vacuum conditions are introduced into the imprint system by providing a porous layer between the substrate-carrying surface and the capture site forming layer, but the fluid assembly liquid may flow into the porous layer, making drying work impossible. The most practical structure for fixing micro-LEDs in embossed stamps is a magnetic or electrostatic force structure. For electrostatic force immobilization, the micro LEDs have a dielectric film deposited on the surface corresponding to the surface mount electrodes (i.e. the bottom surface), and the embossed stamp includes the kinetic electrodes below the trap site structure. For magnetic fixation, the micro-LED electrode structure can contain a magnetic material, such as nickel, while the embossed stamp has permanent magnets or electromagnets.

这些固定机构在阵列中的独立点上是可有开关控制的,因此可以使用如下流程来修复带有缺陷的压印印章:These fixing mechanisms are switchable at individual points in the array, so the following procedure can be used to repair imprinted stamps with defects:

1)检查压印印章,寻找带有缺陷的微型发光二极管;1) Check the embossed stamp for micro LEDs with defects;

2)对所有良好的微型发光二极管开启固定机构;2) Open the fixing mechanism for all good miniature light-emitting diodes;

3)通过冲洗去除有缺陷的微型发光二极管;3) removing defective micro-LEDs by rinsing;

4)放置额外的微型发光二极管悬浮液并进行组装。4) Place additional micro-LED suspensions and assemble.

一方面,压印印章可以包括一光传感器,当按压到显示基板上时,激活所有与压印印章上的微型发光二极管临时电连接的捕集位置(同时或按顺序)。压印印章与相关的驱动电路连接到一个系统,该系统用于记录哪些微型发光二极管是完好的。启动压印印章上的固定装置,使完好的微型发光二极管保持在捕集位置中,并继续进行组装,直到全部的微型发光二极管都测试完好,如上述流程2)-4)所示。之后进行绑定流程。In one aspect, the imprint stamp may include a light sensor that, when pressed onto the display substrate, activates (simultaneously or sequentially) all trapping sites that are temporarily electrically connected to the micro LEDs on the imprint stamp. The embossed stamp, with associated driver circuitry, is connected to a system that records which micro LEDs are good. The fixing device on the embossed stamp is activated to keep the intact micro-LEDs in the trapping position, and the assembly is continued until all the micro-LEDs are tested intact, as shown in the above process 2)-4). Then proceed to the binding process.

图15A-图15I描述了一个微型发光二极管巨量转移压印系统,该系统使用流体压印印章基板以及轴向微型发光二极管。该混合流体组装巨量转移方法也可应用于申请号No.16/846,493所述的轴向微型发光二极管中。为了降低成本并提高密度(density),微型发光二极管被配置为垂直器件,其发光面积为5*8μm,如图15G所示。叶片形的微型发光二极管电极可以为电镀铜或金。上述全部特征的尺寸是可以调整的,但其相对形状是较为重要的,以便于流体组装到定向阵列中。Figures 15A-15I depict a micro-LED mass transfer imprinting system that uses a fluidic imprint stamp substrate along with axial micro-LEDs. The mixed fluid assembly mass transfer method can also be applied to the axial micro-LEDs described in Application No. 16/846,493. In order to reduce cost and increase density, micro LEDs are configured as vertical devices with a light emitting area of 5*8 μm, as shown in FIG. 15G . The electrodes of the blade-shaped mini LEDs can be electroplated copper or gold. The dimensions of all of the features described above are adjustable, but their relative shapes are important to facilitate fluid assembly into directional arrays.

图15A-图15C描述了轴向微型发光二极管显示基板1525的制备过程。电极1528由导电材料(如钼/铜(Mo/Cu))沉积并图案化而成,形成用于容纳微型发光二极管的阴极和阳极的连接垫。在电极上沉积电介质薄膜1530,其材料可以为二氧化硅、氮化硅(Si3N4)或聚酰亚胺,并在电介质薄膜1530上图案化并蚀刻出接触开口,如图15B所示。使用金属电极作为硬掩膜,蚀刻出用于容纳微型发光二极管主体的主体凹槽1532,如图15B所示。最后通过电镀、溅射或蒸发形成N连接垫1536和P连接垫1534,如图15C所示。15A-15C describe the fabrication process of the axial micro-LED display substrate 1525 . Electrodes 1528 are deposited and patterned from a conductive material such as molybdenum/copper (Mo/Cu) to form connection pads for accommodating the cathode and anode of the micro LEDs. Deposit a dielectric film 1530 on the electrode, its material can be silicon dioxide, silicon nitride (Si 3 N 4 ) or polyimide, and pattern and etch a contact opening on the dielectric film 1530, as shown in Figure 15B . Using the metal electrode as a hard mask, a body groove 1532 for accommodating the body of the micro LED is etched, as shown in FIG. 15B . Finally, an N connection pad 1536 and a P connection pad 1534 are formed by electroplating, sputtering or evaporation, as shown in FIG. 15C .

对于轴向微型发光二极管的形状,压印印章的制作过程会更加复杂,需要两个不同深度的捕集位置。如图15D所示,第一凹槽1538被蚀刻在基板上,第一凹槽1538具有一用于容纳突出在轴向电极表面下的微型发光二极管主体的深度和轮廓。在图15E中,通过蚀刻形成了用于容纳轴向电极的第二凹槽1504。第二凹槽也可以在第一凹槽1538形成后由薄膜材料(如光刻聚酰亚胺)制成。For the shape of the axial MLEDs, the fabrication process of the embossed stamp would be more complicated, requiring two trapping locations with different depths. As shown in FIG. 15D, a first recess 1538 is etched into the substrate, the first recess 1538 having a depth and profile for accommodating the body of the miniature LED protruding below the axial electrode surface. In FIG. 15E, a second recess 1504 for receiving the axial electrodes is formed by etching. The second groove can also be made of thin film material (such as photolithographic polyimide) after the first groove 1538 is formed.

将已知完好的轴向微型发光二极管悬浮液应用到压印印章上,并组装成微型发光二极管阵列(如图15F所示)。将组装完成的压印印章进行检查,并与显示基板匹配后按压到一起,从而将LED的电极与显示基板上的电极绑定(如图15I所示)。在绑定完成后,压印印章会被收回,并进行清洗和检查,以便于重复使用。A known good axial MLED suspension was applied to the embossed stamp and assembled into an array of MLEDs (as shown in Figure 15F). The assembled embossed stamp is inspected and pressed together after being matched with the display substrate, thereby binding the electrodes of the LED to the electrodes on the display substrate (as shown in FIG. 15I ). After binding is complete, the debossed stamp is retrieved, cleaned and inspected for reuse.

因此,该系统包括具有一平面的顶表面1502的流体组装压印印章基板1500。形成于压印印章基板顶表面1502的阵列排布的捕集位置1504包括:第一周边形状(大幅矩形),一具有平面的第一深度1508的中心部分1506,一具有平面的第二深度1512的远端1510,第二深度1512小于第一深度1508,以及一具有平面的第二深度1512的近端1514。Thus, the system includes a fluid assembled stamp substrate 1500 having a planar top surface 1502 . The arrayed capture sites 1504 formed on the top surface 1502 of the imprint stamp substrate include a first perimeter shape (largely rectangular), a central portion 1506 having a planar first depth 1508, a planar second depth 1512 A distal end 1510 having a second depth 1512 less than the first depth 1508, and a proximal end 1514 having a planar second depth 1512.

请一并参阅图15F和15G,一轴向的微型发光二极管1516,占据了相应的捕集位置1504,并具有所述第一周边形状,主体1518与捕集位置的中心部分1506接触,一垂直平面部分厚度1520大于捕集位置第一深度1508,但小于两倍的捕集位置第一深度1508。一远端电极1522水平平分主体1518,并与捕集位置远端1510接触。远端电极1522具有一个垂直方向的电极厚度1524,其大于捕集位置第二深度1512,但是小于二倍的捕集位置第二深度1512。一近端电极1526水平平分主体1518,并与捕集位置近端1514接触,近端电极1526具有电极厚度1524。Please refer to Fig. 15F and 15G together, an axial miniature light-emitting diode 1516 occupies the corresponding capture position 1504, and has the first peripheral shape, the main body 1518 is in contact with the central part 1506 of the capture position, and a vertical Planar portion thickness 1520 is greater than first depth of trap location 1508 but less than twice first depth of trap location 1508 . A distal electrode 1522 bisects the body 1518 horizontally and contacts the distal end 1510 of the capture site. The distal electrode 1522 has a vertical electrode thickness 1524 that is greater than the second capture location depth 1512 but less than twice the capture location second depth 1512 . A proximal electrode 1526 bisects the body 1518 horizontally and contacts the capture site proximal end 1514 , the proximal electrode 1526 has an electrode thickness 1524 .

如图15I所示,将微型发光二极管转移到显示基板的过程与图13C所述的过程类似,将对齐的显示基板下压到流体组装压印印章基板上,使微型发光二极管的电极与相应的显示基板上的电极接触。转移和绑定通过在施加压力时对焊料进行加热来完成。可选地,ACF膜(图未示)可以在相应的电极之间插入,以实现电连接和机械连接,而不需要金属相变。As shown in Figure 15I, the process of transferring micro-LEDs to the display substrate is similar to that described in Figure 13C, the aligned display substrate is pressed down onto the fluid assembly imprinted stamp substrate so that the electrodes of the micro-LEDs are aligned with the corresponding Electrode contacts on the substrate are shown. Transfer and bonding are accomplished by heating the solder while applying pressure. Optionally, an ACF film (not shown) can be interposed between the corresponding electrodes to achieve electrical and mechanical connections without the need for a metallic phase transition.

尽管没有明确展示,但本实施例的压印印章基板可以包括如图14A和图14B所示的静电力或磁力产生器。Although not explicitly shown, the imprint stamp substrate of this embodiment may include electrostatic force or magnetic force generators as shown in FIGS. 14A and 14B .

图16是描述与图9A-图9D所示的系统相对应的微型发光二极管巨量转移法的流程图。尽管为了便于理解,该方法被描述为包括一系列带有编号的步骤,但编号并不一定指示这些步骤的顺序。应当理解,有些步骤可以跳过,同时进行或可以无需按照严格的顺序执行。但是,通常可以按照数字顺序的步骤执行该方法。该方法从步骤1600开始。FIG. 16 is a flowchart describing a micro LED mass transfer method corresponding to the system shown in FIGS. 9A-9D . Although the method is described as comprising a series of numbered steps for ease of understanding, the numbering does not necessarily indicate the order of the steps. It should be understood that some steps may be skipped, performed concurrently, or performed in no exact order. However, the method can generally be performed in numerical order of steps. The method starts at step 1600 .

步骤1602提供一种压印印章基板,该基板具有平面的顶表面和形成在所述顶表面的阵列设置的捕集位置,每一捕集位置被设置为柱状凹槽。一方面,步骤1603a使用粘合材料或弹性体图案化压印印章基板的顶表面。在步骤1604中,每个捕集位置凹陷用于容纳从微型发光二极管的底表面延伸出的龙骨,并通过限制每个微型发光二极管的龙骨,在步骤1606中将微型发光二极管固定在压印印章基板上。步骤1606可以使用额外的静电力或磁力来将微型发光二极管固定到压印印章基板上。Step 1602 provides an embossing stamp substrate having a planar top surface and an array of trapping sites formed on the top surface, each trapping site being configured as a columnar groove. In one aspect, step 1603a patterns the top surface of the imprint stamp substrate using an adhesive material or elastomer. In step 1604, each capture location is recessed to accommodate a keel extending from the bottom surface of the micro-LED, and by constraining the keel of each micro-LED, the micro-LED is secured to the embossed stamp in step 1606. on the substrate. Step 1606 may use additional electrostatic or magnetic forces to secure the micro LEDs to the embossed stamp substrate.

一方面,步骤1604中限制龙骨包括限制具有不导电龙骨的表面贴装LED,其包括一具有第一电极和第二电极的平面的表面。另一方面,步骤1604限制一导电的龙骨,并连接到第二电极,该垂直LED包括一具有第一电极的平面的表面(即龙骨为第二电极)。In one aspect, constraining the keel at step 1604 includes constraining the surface mount LED with a non-conductive keel comprising a planar surface having a first electrode and a second electrode. On the other hand, step 1604 defines a conductive keel and connects to the second electrode, the vertical LED includes a surface with the plane of the first electrode (ie the keel is the second electrode).

一方面,步骤1602提供一具有间隔捕集位置的压印印章基板。步骤1601a提供一流体组装载体衬底,其具有平面的顶表面以及在载体衬底顶表面阵列设置的多个阱,相邻阱之间的间距与压印印章基板上捕集位置之间的间距相匹配。在步骤1601b中,通过流体组装过程,将微型发光二极管填充进载体衬底的阱中。一方面,步骤1601b可以使用静电力或磁力将微型发光二极管固定到阱中。步骤1603b将压印印章基板的顶表面按压在载体衬底的顶表面上,每一捕集位置与相应的阱接触,步骤1603c将微型发光二极管从载体衬底巨量转移到压印印章基板上。In one aspect, step 1602 provides an imprint stamp substrate having spaced apart capture locations. Step 1601a provides a fluidically assembled carrier substrate having a planar top surface and a plurality of wells disposed in an array on the top surface of the carrier substrate, the spacing between adjacent wells being the same as the spacing between trapping sites on the imprinted stamp substrate match. In step 1601b, micro LEDs are filled into the wells of the carrier substrate through a fluid assembly process. In one aspect, step 1601b can use electrostatic force or magnetic force to fix the micro LEDs in the well. Step 1603b presses the top surface of the embossed stamp substrate onto the top surface of the carrier substrate, each trapping site is in contact with the corresponding well, and step 1603c mass transfers the micro LEDs from the carrier substrate to the embossed stamp substrate .

具体来说,步骤1601a可提供一载体衬底,其具有包括第一周边形状和平面的阱底面的多个阱。之后,在步骤1601b中将微型发光二极管填充到每一阱中,其中填充进阱中的表面贴装微型发光二极管具有第一周边形状,一与所述阱底面接触的平面的顶表面,其包括第一电极和第二电极。在其他实施例中,步骤1601b填充进阱中的垂直微型发光二极管具有第一周边形状,一与所述阱底面接触的平面的顶表面,其包括一第一电极。Specifically, step 1601a may provide a carrier substrate having a plurality of wells including a first peripheral shape and a planar well bottom surface. Afterwards, in step 1601b, micro light emitting diodes are filled into each well, wherein the surface mount micro light emitting diodes filled in the wells have a first peripheral shape, a planar top surface in contact with the bottom surface of the well, which includes first electrode and second electrode. In other embodiments, the vertical micro light emitting diodes filled into the well in step 1601b have a first peripheral shape, a planar top surface contacting the bottom surface of the well, which includes a first electrode.

在RGB显示的情况下,步骤1601a中提供的载体衬底包括:In the case of an RGB display, the carrier substrate provided in step 1601a includes:

第一流体组装载体衬底,其包括设于载体衬底顶表面的阱阵列,相邻阱之间的距离与压印印章基板上相邻捕集位置的间距匹配;A first fluidly assembled carrier substrate comprising an array of wells disposed on the top surface of the carrier substrate, the distance between adjacent wells matching the spacing between adjacent trapping sites on the imprinted stamp substrate;

第二流体组装载体衬底,其包括设于载体衬底顶表面的阱阵列,相邻阱之间的距离与压印印章基板上相邻捕集位置的间距匹配;a second fluidly assembled carrier substrate comprising an array of wells disposed on the top surface of the carrier substrate, the distance between adjacent wells matching the spacing between adjacent capture sites on the imprinted stamp substrate;

第三流体组装载体衬底,其包括设于载体衬底顶表面的阱阵列,相邻阱之间的距离与压印印章基板上相邻捕集位置的间距匹配。然后,步骤1601b中填充载体衬底的阱的过程包括:A third fluid assembled carrier substrate includes an array of wells disposed on the top surface of the carrier substrate, the distance between adjacent wells matching the pitch of adjacent trapping sites on the imprint stamp substrate. Then, the process of filling the well of the carrier substrate in step 1601b includes:

使用第一微型发光二极管填充第一载体衬底上的阱,其被配置为发出第一波长的光;filling a well on the first carrier substrate with a first micro light emitting diode configured to emit light at a first wavelength;

使用第二微型发光二极管填充第二载体衬底上的阱,其被配置为发出第二波长的光;以及filling a well on a second carrier substrate with a second micro light emitting diode configured to emit light at a second wavelength; and

使用第三微型发光二极管填充第三载体衬底上的阱,其被配置为发出第三波长的光。步骤1603c中将微型发光二极管从载体衬底上转移到压印印章基板上包括将微型发光二极管从第一、第二、第三载体衬底上转移到相应的压印印章基板上。如图10A和图10B所示,对于具有不同形状的RGB微型发光二极管,采用不同尺寸的载体衬底是必要的。此外,如果RGB微型发光二极管的直径相等,也可以使用一个载体衬底分别填充不同波长的微型发光二极管,并分别转移到压印印章基板上。A well on a third carrier substrate is filled with a third micro light emitting diode configured to emit light at a third wavelength. In step 1603c, transferring the micro LEDs from the carrier substrate to the embossed stamp substrate includes transferring the micro LEDs from the first, second and third carrier substrates to the corresponding embossed stamp substrates. As shown in FIG. 10A and FIG. 10B , for RGB micro-LEDs with different shapes, it is necessary to use carrier substrates of different sizes. In addition, if the diameters of the RGB micro-LEDs are equal, a carrier substrate can also be used to fill micro-LEDs of different wavelengths and transfer them to the embossed stamp substrate respectively.

步骤1608提供一具有平面的顶表面以及微型发光二极管连接垫阵列的显示基板,每一微型发光二极管连接垫至少包括一形成于顶表面的电极,并电连接至一下方的列和行控制线的矩阵。显示基板上相邻连接垫之间具有与压印印章基板上相邻捕集位置间距匹配的间距,该间距与载体衬底上相邻阱之间的间距相同。步骤1610中压印印章基板的顶表面按压在显示基板的顶表面上,每一捕集位置与相应的微型发光二极管连接垫接触。步骤1612中微型发光二极管从压印印章基板上巨量转移至显示基板的微型发光二极管连接垫上。一方面,步骤1612中通过加热显示基板,从而使微型发光二极管绑定到微型发光二极管连接垫上。Step 1608 provides a display substrate having a planar top surface and an array of micro-LED connection pads, each micro-LED connection pad includes at least one electrode formed on the top surface, and is electrically connected to a lower column and row control line. matrix. The spacing between adjacent connection pads on the display substrate matches the spacing between adjacent trapping sites on the imprinted stamp substrate, which is the same as the spacing between adjacent wells on the carrier substrate. In step 1610, the top surface of the embossed stamp substrate is pressed against the top surface of the display substrate, and each capture location is in contact with a corresponding micro-LED connection pad. In step 1612, the micro-LEDs are mass-transferred from the embossed stamp substrate to the micro-LED connection pads of the display substrate. On the one hand, in step 1612, the display substrate is heated to bind the micro-LEDs to the connection pads of the micro-LEDs.

在RGB显示的情况下,步骤1608中的显示基板包括多个用于第一微型发光二极管的连接垫,用于发出第一波长光;多个用于第二微型发光二极管的连接垫,用于发出第二波长光;以及多个用于第三微型发光二极管的连接垫,用于发出第三波长光。之后,步骤1610中将压印印章基板顶表面按压到显示基板顶表面的过程包括分别将填充有第一微型发光二极管、第二微型发光二极管和第三微型发光二极管的压印印章基板进行按压。每种波长的微型发光二极管可以使用一种压印印章基板,或者如果所有的微型发光二极管的形状相似时,也可以使用同一基板填充不同波长的微型发光二极管,并将其转移到显示基板上。In the case of RGB display, the display substrate in step 1608 includes a plurality of connection pads for the first micro light emitting diodes for emitting light of the first wavelength; a plurality of connection pads for the second micro light emitting diodes for emitting light of the second wavelength; and a plurality of connection pads for the third micro light emitting diodes for emitting light of the third wavelength. Afterwards, the process of pressing the top surface of the embossed stamp substrate to the top surface of the display substrate in step 1610 includes pressing the embossed stamp substrate filled with the first micro-LEDs, the second micro-LEDs and the third micro-LEDs respectively. One imprinted stamp substrate can be used for each wavelength of the LEDs, or if all the LEDs are similar in shape, the same substrate can be used to fill the different wavelength LEDs and transfer them to the display substrate.

图17为图13A-图13K展示的使用流体组装压印印章基板进行微型发光二极管巨量转移方法的流程图。该方法从步骤1700开始。步骤1702提供一具有平面的顶表面的流体组装压印印章基板,其顶表面上设置的捕集位置具有第一周边形状,一深度以及一平面的捕集位置底表面。在流体组装进程下,步骤1704中填充进捕集位置的微型发光二极管具有:第一周边形状,大于捕集位置深度的厚度,与捕集位置底表面接触的平面的底表面,以及具有第一电极的延伸出捕集位置的平面的顶表面。微型发光二极管还包括一固定机构。步骤1704中可以使用底表面上具有第二电极的微型发光二极管,也可以使用顶表面上具有第一电极和第二电极的表面贴装微型发光二极管填充进捕集位置中。FIG. 17 is a flow chart of the mass transfer method for micro-LEDs shown in FIGS. 13A-13K using a fluid-assembled imprinted stamp substrate. The method starts at step 1700 . Step 1702 provides a fluid assembled imprint stamp substrate having a planar top surface with capture sites disposed on the top surface having a first perimeter shape, a depth, and a planar capture site bottom surface. Under the fluid assembly process, the micro-LEDs filled into the trapping location in step 1704 have: a first peripheral shape, a thickness greater than the depth of the trapping location, a planar bottom surface in contact with the bottom surface of the trapping location, and a first The top surface of the electrode extends out of the plane of the trapping site. The miniature LED also includes a fixing mechanism. In step 1704, micro LEDs with a second electrode on the bottom surface may be used, or surface-mounted micro LEDs with a first electrode and a second electrode on the top surface may be used to fill the trapping positions.

一方面,步骤1702中的提供压印印章基板包括提供一具有间隔捕集位置的压印印章基板。步骤1706提供的显示基板具有一平面的底表面以及阵列设置的微型发光二极管连接垫,每一微型发光二极管连接垫包括形成于顶表面的第一电极,并电连接至下方的列和行控制线的矩阵。显示基板上相邻连接垫位置的间距与压印印章基板上相邻捕集位置之间的间距向匹配。步骤1708中,按压压印印章基板的顶表面至显示基板的顶表面上,使每一捕集位置与一微型发光二极管连接垫接触。步骤1710中将压印印章基板上的微型发光二极管巨量转移到显示基板的微型发光二极管连接垫上。步骤1710可包括运用加热方式促使微型发光二极管与显示基板的连接垫形成绑定。In one aspect, providing an imprint stamp substrate in step 1702 includes providing an imprint stamp substrate having spaced apart capture locations. The display substrate provided in step 1706 has a flat bottom surface and micro-LED connection pads arranged in an array, each micro-LED connection pad includes a first electrode formed on the top surface, and is electrically connected to the lower column and row control lines matrix. The spacing between adjacent connection pad locations on the substrate was shown to match the spacing between adjacent trapping locations on the imprinted stamp substrate. In step 1708, press the top surface of the embossed stamp substrate onto the top surface of the display substrate, so that each capture site is in contact with a micro LED connection pad. In step 1710, the micro-LEDs on the embossed stamp substrate are mass-transferred to the micro-LED connection pads of the display substrate. Step 1710 may include applying heat to form a bond between the micro LEDs and the connection pads of the display substrate.

一方面,步骤1704提供了在微型发光二极管顶表面形成龙骨形式的固定机构,该龙骨可以是连接到第一电极(如图13D和图13E)的导电龙骨,或者为临时的(可移除)不导电龙骨(如图13A)。另一方面,步骤1702提供的压印印章基板,其每一捕集位置的底表面涂布有包括共轭生物分子对的第一成分。然后,步骤1704中提及的固定机构为具有共轭生物分子对的第二成分,其包覆每个微型发光二极管的底表面。共轭生物分子对的例子包括生物素-链霉亲和素、硫醇-马来酰亚胺和叠氮化物-炔。压印印章基板也可以进一步设置静电力或磁力产生器,如图14A和图14B所示。In one aspect, step 1704 provides a fixing mechanism in the form of a keel formed on the top surface of the micro-LED, the keel may be a conductive keel connected to the first electrode (as shown in Figures 13D and 13E), or a temporary (removable) Non-conductive keel (as shown in Figure 13A). On the other hand, the bottom surface of each trapping position of the imprinted stamp substrate provided in step 1702 is coated with the first component comprising a pair of conjugated biomolecules. Then, the immobilization mechanism mentioned in step 1704 is a second component with pairs of conjugated biomolecules, which coats the bottom surface of each micro LED. Examples of conjugated biomolecular pairs include biotin-streptavidin, thiol-maleimide, and azide-alkyne. The embossed stamp substrate can also be further provided with an electrostatic force or magnetic force generator, as shown in FIG. 14A and FIG. 14B .

图18为图15A-图15I所示的系统的轴向微型发光二极管巨量转移法的流程图。该方法从步骤1800开始。步骤1802提供一具有平面的顶表面的流体组装压印印章基板,顶表面上形成有多个捕集位置,每一捕集位置具有第一周边形状、具有平面的第一深度的中心部分、一具有小于第一深度的平面的第二深度的远端以及一具有第二深度的近端。在流体组装进程下,步骤1804使用轴向微型发光二极管填充捕集位置,每一微型发光二极管占据相应捕集位置并具有所述第一周边形状及与中心部分贴合的主体部分,该主体部分的垂直体厚度大于捕集位置的第一深度,但小于二倍第一深度。微型发光二极管还具有水平平分主体部分的远端电极,所述远端电极与捕集位置的远端部分贴合,所述远端电极的垂直面的电极厚度大于捕集位置的第二深度,但小于二倍第二深度。微型发光二极管还具有水平平分主体部分的近端电极,其与捕集位置的近端部分贴合,并具有电极厚度。一方面,压印印章电极还可以包括静电力或磁力产生器,如图14A和图14B所示。FIG. 18 is a flow chart of the axial micro-LED mass transfer method of the system shown in FIGS. 15A-15I . The method starts at step 1800 . Step 1802 provides a fluid assembled stamp substrate having a planar top surface on which a plurality of capture sites are formed, each capture site having a first perimeter shape, a central portion having a planar first depth, a A distal end having a second depth that is less than a plane of the first depth and a proximal end having a second depth. Under the fluid assembly process, step 1804 fills the trapping locations with axial micro-LEDs, each micro-LED occupying a corresponding trapping location and having the first peripheral shape and a main body portion conforming to the central portion, the main body portion The vertical body thickness of is greater than the first depth at the capture location but less than twice the first depth. The miniature light-emitting diode also has a distal electrode that horizontally bisects the main body, and the distal electrode is bonded to the distal portion of the trapping position, and the electrode thickness of the vertical surface of the distal electrode is greater than the second depth of the trapping position, But less than twice the second depth. The miniature light emitting diode also has a near-end electrode that horizontally bisects the main body, which is attached to the near-end part of the trapping position and has an electrode thickness. In one aspect, the imprinting stamp electrode may also include an electrostatic force or magnetic force generator, as shown in FIGS. 14A and 14B .

一方面,步骤1802中的提供压印印章基板包括提供一具有间距的捕集位置的压印印章基板。步骤1806中提供具有平面的顶表面和微型发光二极管连接垫阵列的显示基板,每一微型发光二极管连接垫包括形成于顶表面的第一电极和第二电极,所述多个电极电连接至一下方的列和行控制线的矩阵。显示基板包括被一间距隔开的多个连接垫,该间距与将压印印章基板上的捕集位置间隔开的间距相匹配。在步骤1808中,按压压印印章基板的顶表面至显示基板的顶表面上,使每一捕集位置与一微型发光二极管连接垫对齐。在步骤1810中将微型发光二极管从压印印章基板巨量转移到显示基板的微型发光二极管连接垫上。可选地,通过加热可以促进微型发光二极管与显示基板连接垫电极之间的绑定。In one aspect, providing an imprint stamp substrate in step 1802 includes providing an imprint stamp substrate having spaced apart capture locations. In step 1806, a display substrate having a planar top surface and an array of micro-LED connection pads is provided, each micro-LED connection pad includes a first electrode and a second electrode formed on the top surface, and the plurality of electrodes are electrically connected to a Square's columns and rows control the lines of the matrix. The display substrate includes a plurality of connection pads separated by a pitch that matches the pitch that separates the capture locations on the imprinted stamp substrate. In step 1808, the top surface of the embossed stamp substrate is pressed onto the top surface of the display substrate so that each capture site is aligned with a micro LED connection pad. In step 1810, the micro-LEDs are mass-transferred from the embossed stamp substrate to the micro-LED connection pads of the display substrate. Optionally, the bonding between the micro light emitting diodes and the connection pad electrodes of the display substrate can be promoted by heating.

图19为微型发光二极管转移的间距扩展方法的流程图。该方法开始于步骤1900。步骤1902提供一微型发光二极管MOCVD晶圆,相邻微型发光二极管之间具有第一间距。步骤1904将微型发光二极管释放到流体组装悬浮液中。步骤1906提供一具有阵列设置的阱的载体衬底,相邻的阱之间具有第二间距,并且所述第二间距与所述第一间距不同。通过流体组装过程,在步骤1908中将微型发光二极管填充进载体衬底的阱中。步骤1910提供一包括捕集位置阵列的压印印章基板,相邻捕集位置被第二间距间隔开。步骤1912中将压印印章基板顶表面按压在载体衬底顶表面上,使每一捕集位置与一相应的阱接触。步骤1914中将微型发光二极管从载体衬底上巨量转移至压印印章基板上。FIG. 19 is a flow chart of a pitch extension method for micro-LED transfer. The method begins at step 1900 . Step 1902 provides a micro LED MOCVD wafer with a first distance between adjacent micro LEDs. Step 1904 releases the micro LEDs into the fluid assembly suspension. Step 1906 provides a carrier substrate having wells arranged in an array with a second spacing between adjacent wells, and the second spacing is different from the first spacing. Through a fluidic assembly process, micro LEDs are filled in the wells of the carrier substrate in step 1908 . Step 1910 provides an imprint stamp substrate comprising an array of capture locations, adjacent capture locations being separated by a second spacing. In step 1912, the top surface of the imprint stamp substrate is pressed against the top surface of the carrier substrate so that each trapping site is in contact with a corresponding well. In step 1914, the micro LEDs are mass transferred from the carrier substrate to the embossed stamp substrate.

步骤1916提供一具有阵列设置的微型发光二极管连接垫的显示基板,每一微型发光二极管连接垫包括至少一形成于顶表面的电极,并电连接至一下方的列和行控制线的矩阵上。显示基板上相邻的连接垫位置被所述第二间距间隔开。步骤1918中将压印印章基板的顶表面按压在显示基板的顶表面上,使捕集位置与一相应的微型发光二极管连接垫接触。步骤1920中将微型发光二极管从压印印章基板上巨量转移到显示基板的微型发光二极管连接垫上。可选地,通过加热来促使微型发光二极管与显示基板连接垫的电极形成绑定。Step 1916 provides a display substrate with an array of micro-LED connection pads, each micro-LED connection pad including at least one electrode formed on the top surface and electrically connected to an underlying matrix of column and row control lines. Adjacent connection pad positions on the display substrate are separated by the second distance. In step 1918, the top surface of the embossed stamp substrate is pressed against the top surface of the display substrate, so that the capture site is in contact with a corresponding micro-LED connection pad. In step 1920, the micro-LEDs are mass-transferred from the embossed stamp substrate to the micro-LED connection pads of the display substrate. Optionally, heat is used to promote the formation of bonds between the micro light emitting diodes and the electrodes of the connection pads of the display substrate.

一方面,步骤1906、步骤1908、步骤1912和步骤1914被绕过,并通过额外的步骤1911,即使用流体组装工艺,将微型发光二极管直接填充至压印印章基板的捕集位置中。In one aspect, step 1906, step 1908, step 1912 and step 1914 are bypassed and an additional step 1911 is performed to fill the micro LEDs directly into the trapping sites of the embossed stamp substrate using a fluidic assembly process.

本申请提供了微型发光二极管巨量转移的系统和方法。给出了特定LED,载体衬底以及压印印章基板结构的例子来说明本申请。然而,本申请不局限于上述示例。本领域技术人员可以想到本申请的其他变体和实施例。The present application provides a system and method for mass transfer of miniature light emitting diodes. Examples of specific LED, carrier substrate and embossed stamp substrate structures are given to illustrate the application. However, the present application is not limited to the above examples. Other variations and embodiments of the application may occur to those skilled in the art.

Claims (22)

1. A micro-led mass transfer fluid assembly carrier system comprising:
a fluid assembly carrier substrate having a planar top surface; and
an array of trapping sites formed on a top surface of the carrier substrate, each trapping site configured as a recessed well to temporarily hold a fluid deposited micro light emitting diode.
2. The carrier system of claim 1, further comprising: and the miniature light-emitting diode is filled in the well on the carrier substrate.
3. The carrier system of claim 1, wherein a distance between adjacent wells on the carrier substrate is less than or equal to a distance between adjacent trapping sites on a corresponding bulk transfer stamp.
4. The carrier system of claim 3, further comprising:
the bulk transfer stamp comprising:
an imprint stamp substrate having a top surface; and
An array of capture locations is formed on the top surface of the imprint stamp substrate, each capture location being configured to temporarily receive a corresponding micro-led from a well of a carrier substrate.
5. The carrier system of claim 4, wherein the well of each of the carrier substrates has a planar bottom surface;
The carrier system further comprises:
micro light emitting diodes filling said wells on said carrier substrate, each of said light emitting diodes having a top surface in contact with a bottom surface of a corresponding well, and a keel extending from the bottom surface thereof; the method comprises the steps of,
the imprint stamp substrate capture station is configured to receive a keel of the light emitting diode.
6. The carrier system of claim 1, wherein the carrier substrate does not include conductive traces and electronic components.
7. The carrier system of claim 2, wherein the well of each of the carrier substrates has a planar bottom surface; and
the micro light emitting diodes are surface mount micro light emitting diodes, each comprising a planar top surface having a first electrode and a second electrode, the first electrode and the second electrode being in contact with a bottom surface of a corresponding carrier substrate well.
8. The carrier system of claim 7, wherein each of the micro-leds further comprises a non-conductive keel extending from a bottom surface of the micro-led.
9. The carrier system of claim 2, wherein each of the carrier substrate wells has a planar bottom surface; and
The micro light emitting diodes are vertical micro light emitting diodes, each including a planar top surface with a first electrode in contact with a corresponding well of the carrier substrate, and a second electrode on the bottom surface of the micro light emitting diode.
10. The carrier system of claim 9, wherein the second electrode of each of the light emitting diodes is a conductive keel extending from a bottom surface of the light emitting diode.
11. The carrier system of claim 2, wherein the carrier substrate well has a first perimeter shape; the method comprises the steps of,
the micro light emitting diode has the first perimeter shape.
12. The carrier system of claim 2, further comprising:
a first fluid assembly carrier substrate having an array of wells formed in a top surface of the first fluid assembly carrier substrate;
a second fluid assembly carrier substrate having an array of wells formed in a top surface of the second fluid assembly carrier substrate;
a third fluid assembly carrier substrate having an array of wells formed in a top surface of the third fluid assembly carrier substrate;
a plurality of micro light emitting diodes configured to emit light at a first wavelength, each occupying a corresponding well in the first fluid assembly carrier substrate;
A plurality of micro light emitting diodes configured to emit light at a second wavelength, each occupying a corresponding well in the second fluid assembly carrier substrate; and
A plurality of micro light emitting diodes configured to emit light at a third wavelength, each occupying a corresponding well in the third fluid assembly carrier substrate.
13. The carrier system of claim 2, further comprising:
an attractive force generator below the carrier substrate, the attractive force generator selected from the group consisting of a magnetic force generator and an electrostatic force generator, for temporarily fixing the micro light emitting diode in the well of the carrier substrate.
14. The carrier system of claim 2, wherein a bottom surface of the wells of each of the carrier substrates is coated with a first component comprising a conjugated biomolecule pair; the method comprises the steps of,
wherein each of the micro light emitting diodes comprises a top surface coated with a second component comprising a conjugated biomolecule pair, the top surface being in contact with a bottom surface of a well of a corresponding one of the carrier substrates.
15. A method for mass transfer of a micro light emitting diode, comprising:
Manufacturing a micro light emitting diode on a wafer;
releasing the micro light emitting diode from the wafer into a suspension;
transferring the micro light emitting diode fluid deposition onto a carrier substrate;
transferring the micro light emitting diode from the carrier substrate to a bulk transfer stamp; and
and transferring the miniature light emitting diode from the huge transfer stamping seal to a display substrate.
16. The micro light emitting diode macro-transfer method of claim 15, wherein the carrier substrate has a planar top surface and an array of wells formed on the carrier substrate top surface, the wells being filled with the micro light emitting diodes; and
the step of transferring the micro light emitting diode from the carrier substrate to a bulk transfer stamp comprises: pressing the top surface of the bulk transfer stamp against the top surface of the carrier substrate such that an array of bulk transfer stamp capture bits formed on the top surface of the bulk transfer stamp are inter-engaged with corresponding micro light emitting diodes in the wells of the carrier substrate.
17. The micro light emitting diode macro-transfer method of claim 16, wherein the wells of the carrier substrate have a first perimeter shape and a bottom surface of the planar wells; and
The step of fluid deposition transferring the micro light emitting diode onto a carrier substrate comprises filling micro light emitting diodes having the first perimeter shape into the wells.
18. The method of claim 16, wherein adjacent wells in the array of wells of the carrier substrate have a spacing therebetween; and
the spacing between adjacent trapping sites in the array of trapping sites of the bulk transfer stamp is greater than or equal to the spacing between adjacent wells in the array of wells of the carrier substrate.
19. The micro light emitting diode macro-transfer method of claim 15, further comprising:
prior to the step of fluid depositing and transferring the micro-leds onto a carrier substrate, a keel is formed on each micro-led, the keel extending over the exposed bottom surface of the led.
20. The method of mass transfer of micro-leds of claim 19, wherein transferring the micro-leds from the carrier substrate to a mass transfer stamp comprises configuring a capture location of the mass transfer stamp to receive a keel of the micro-leds.
21. The micro light emitting diode macro-transfer method of claim 15, further comprising:
coating a first component having a conjugated biomolecule pair on a bottom surface of a well of a carrier substrate prior to the step of fluid deposition transferring the micro light emitting diode onto the carrier substrate; and
in the suspension, a second component having a conjugated biomolecule pair is coated on the micro light emitting diode.
22. The micro light emitting diode macro-transfer method of claim 15, further comprising:
before the step of transferring the micro light emitting diode fluid deposit onto a carrier substrate, an attractive force generator is used below the carrier substrate, the attractive force generator being selected from the group consisting of a magnetic force generator and an electrostatic force generator for temporarily fixing the micro light emitting diode in a well of the carrier substrate.
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