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CN116568366A - Adjustable shunt with resonant circuit and associated systems and methods - Google Patents

Adjustable shunt with resonant circuit and associated systems and methods Download PDF

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CN116568366A
CN116568366A CN202180082223.5A CN202180082223A CN116568366A CN 116568366 A CN116568366 A CN 116568366A CN 202180082223 A CN202180082223 A CN 202180082223A CN 116568366 A CN116568366 A CN 116568366A
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actuation element
electronic components
circuit
shape memory
energy
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彼得·安德里奥拉
布赖恩·法赫
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Shifamed Holdings LLC
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Priority claimed from PCT/US2021/053836 external-priority patent/WO2022076601A1/en
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Abstract

本技术整体涉及具有形状记忆致动元件的分流系统,这些形状记忆致动元件能够选择性地改变分流元件的几何结构以影响流体穿过其的流动。在一些实施方案中,这些形状记忆致动元件被并入作为板载谐振电路的一部分。激活该谐振电路致使电流流动穿过该形状记忆致动元件,从而对该形状记忆致动元件进行电阻加热。

The present technology generally relates to shunt systems having shape memory actuated elements capable of selectively changing the geometry of the shunt element to affect the flow of fluid therethrough. In some embodiments, these shape memory actuation elements are incorporated as part of an on-board resonant circuit. Activating the resonant circuit causes current to flow through the shape memory actuation element, thereby resistively heating the shape memory actuation element.

Description

具有谐振电路的可调节分流器以及相关联系统和方法Adjustable shunt with resonant circuit and associated systems and methods

相关申请的交叉引用Cross References to Related Applications

本申请要求2020年10月7日提交的美国临时申请号63/088,832和2020年10月8日提交的美国临时申请号63/089,391的权益,这两个申请全文以引用方式并入本文。This application claims the benefit of U.S. Provisional Application No. 63/088,832, filed October 7, 2020, and U.S. Provisional Application No. 63/089,391, filed October 8, 2020, both of which are incorporated herein by reference in their entirety.

技术领域technical field

本技术整体涉及植入式医疗装置,并且具体地涉及用于选择性地控制第一身体区域和第二身体区域之间的流体流动的植入式分流系统和相关联方法。The present technology relates generally to implantable medical devices, and in particular to implantable shunt systems and associated methods for selectively controlling fluid flow between a first body region and a second body region.

背景技术Background technique

可选择性地激活或以其他方式致动的植入式医疗装置通常需要某种功率管理系统。功率管理系统可用于若干类型的操作。例如,功率管理系统可用于操作装置上的电子部件(例如,微控制器、传感器等),并且还可用于驱动装置的各方面的激活或致动。为此,一些医疗装置包括与该装置成一体或可操作地联接到该装置的能量存储部件(例如,电池、电容器、超级电容器等)。每个能量存储部件与不同的特性(例如,容量、能量密度、功率密度、放电速率、阻抗等)相关联,并且因此不同的部件可最适合不同类型的操作。Implantable medical devices that can be selectively activated or otherwise actuated typically require some sort of power management system. Power management systems can be used for several types of operations. For example, a power management system may be used to operate electronic components on the device (eg, microcontrollers, sensors, etc.), and may also be used to drive activation or actuation of various aspects of the device. To this end, some medical devices include energy storage components (eg, batteries, capacitors, supercapacitors, etc.) integral with or operatively coupled to the device. Each energy storage component is associated with different properties (eg, capacity, energy density, power density, discharge rate, impedance, etc.), and thus different components may be best suited for different types of operations.

植入式装置还可包括用于无线地接收能量以及对能量存储装置充电或再充电的板载电子器件。例如,图1是用于对能量存储装置(在所示实施方案中为电容器C2)再充电的常规电路100的示意图,该能量存储装置可用于向主动供电的致动器106供电。电路100可包括响应于暴露于磁场和/或电场而生成能量的整流谐振RLC电路。在谐振RLC电路中生成的至少一些能量被引导到电容器C2并且存储在该电容器中。然后,所存储的能量可以受控方式被释放以向致动器106供电。例如,电路100可包括开关模式电源电路,该开关模式电源电路可控制经由电容器C2释放的能量的参数,以维持对递送到致动器106的电力的精确控制。然而,此类常规电路存在若干缺点。例如,致动器106不能由外部能量源直接激活,这使得必须使用一个或多个能量存储装置并且增加了装置的成本、尺寸和复杂性。此外,可用于驱动致动器106的功率的量受到能量存储装置的存储容量的限制,该存储容量通常与能量存储装置的尺寸成比例。另外,能量存储装置的放电速率和放电时间特性可能不允许实际利用全部能量存储容量(例如,当在例如流体环境的环境中使用时,其中递送到致动器106和/或由该致动器转换的能量被快速转移到周围介质),从而进一步增加成功驱动致动器106所需的能量存储装置的尺寸。The implanted device may also include onboard electronics for wirelessly receiving energy and charging or recharging the energy storage device. For example, FIG. 1 is a schematic diagram of a conventional circuit 100 for recharging an energy storage device (capacitor C2 in the illustrated embodiment), which may be used to power an actively powered actuator 106 . Circuit 100 may include a rectifying resonant RLC circuit that generates energy in response to exposure to a magnetic and/or electric field. At least some of the energy generated in the resonant RLC circuit is directed to and stored in capacitor C2. The stored energy may then be released in a controlled manner to power the actuator 106 . For example, circuit 100 may include a switched-mode power supply circuit that may control parameters of energy released via capacitor C2 to maintain precise control of power delivered to actuator 106 . However, such conventional circuits suffer from several disadvantages. For example, the actuator 106 cannot be directly activated by an external energy source, necessitating the use of one or more energy storage devices and increasing the cost, size and complexity of the device. Furthermore, the amount of power available to drive the actuator 106 is limited by the storage capacity of the energy storage device, which is generally proportional to the size of the energy storage device. Additionally, the discharge rate and discharge time characteristics of the energy storage device may not allow practical utilization of the full energy storage capacity (e.g., when used in an environment, such as a fluid environment, where the The converted energy is quickly transferred to the surrounding medium), thereby further increasing the size of the energy storage device required to successfully drive the actuator 106.

虽然前述这些缺点说明了集成较大能量存储装置的愿望,但是能量存储装置的尺寸可能受到植入式装置的目标解剖位置和/或用于植入植入式装置的手术的限制。因此,可供使用的能量存储装置的存储容量和/或放电特性通常是亚最佳的。其结果是,利用与图1中的电路类似的方法通常不能驱动植入式医疗装置中的致动器,或者此类方法需要使用亚最佳(例如,低质量)的致动器才能成功。因此,存在改进主动供电的医疗装置中的功率管理系统的需要。While the foregoing shortcomings illustrate the desire to integrate larger energy storage devices, the size of the energy storage device may be limited by the target anatomical location of the implanted device and/or the procedure used to implant the implanted device. Consequently, the storage capacity and/or discharge characteristics of available energy storage devices are often sub-optimal. As a result, actuators in implantable medical devices typically cannot be driven using methods similar to the circuit in FIG. 1 , or such methods require the use of suboptimal (eg, low quality) actuators to be successful. Accordingly, there is a need for improved power management systems in actively powered medical devices.

附图说明Description of drawings

图1是用于对植入式能量存储装置进行充电的电路的示意图。Figure 1 is a schematic diagram of a circuit for charging an implanted energy storage device.

图2是植入心脏内并且根据本技术的选择实施方案配置的心房间装置的示意图。2 is a schematic illustration of an interatrial device implanted within a heart and configured in accordance with a selected embodiment of the present technology.

图3是根据本技术的选择实施方案配置的可调节心房间分流系统的示意图。3 is a schematic illustration of an adjustable interatrial shunt system configured in accordance with an alternative embodiment of the present technology.

图4是并入致动元件并且根据本技术的选择实施方案配置的电路的示意图。4 is a schematic diagram of an electrical circuit incorporating an actuation element and configured in accordance with selected embodiments of the present technology.

图5是根据本技术的实施方案的用于部署可调节分流系统的方法的流程图。5 is a flowchart of a method for deploying an adjustable shunt system in accordance with an embodiment of the present technology.

具体实施方式Detailed ways

本技术整体涉及具有形状记忆致动元件的可调节分流系统,该形状记忆致动元件能够选择性地改变分流元件的几何结构以影响流体穿过其的流动。在一些实施方案中,形状记忆致动元件直接并入到板载谐振电路内。激活谐振电路(例如,通过外部施加的能量,诸如外部生成的磁场)致使电流流动穿过该形状记忆致动元件,从而对该形状记忆致动元件进行电阻加热。将形状记忆致动元件加热到其转变温度以上可引起形状记忆致动元件中的材料状态的改变,这可引起致动元件中的几何结构改变,该几何结构改变可驱动分流元件中的对应几何结构改变。The present technology generally relates to adjustable shunt systems having shape memory actuated elements capable of selectively changing the geometry of the shunt elements to affect the flow of fluid therethrough. In some embodiments, shape memory actuation elements are incorporated directly into the on-board resonant circuit. Activation of the resonant circuit (eg, by externally applied energy, such as an externally generated magnetic field) causes current to flow through the shape memory actuation element, thereby resistively heating the shape memory actuation element. Heating the shape-memory actuation element above its transition temperature can cause a change in the state of the material in the shape-memory actuation element, which can cause a change in geometry in the actuation element that can drive a corresponding geometry in the shunt element. Structural changes.

下文呈现的描述中使用的术语旨在以其最广泛的合理方式来解释,即使它是结合本技术的某些特定实施方案的详细描述使用的。下文甚至可能会强调某些术语;然而,任何旨在以任何受限方式解释的术语将在本具体实施方式部分中公开且具体地定义。另外,本技术还可包括在示例的范围内但未关于图2至图4详细描述的其他实施方案。Terminology used in the description presented below is intended to be interpreted in its broadest reasonable manner, even though it is used in conjunction with a detailed description of certain specific embodiments of the technology. Certain terms may even be emphasized below; however, any terms that are intended to be interpreted in any limited manner will be disclosed and specifically defined in this detailed description. In addition, the technology may also include other embodiments within the scope of the examples but not described in detail with respect to FIGS. 2-4 .

整个说明书中提及的″一个实施方案″或″实施方案″意味着结合该实施方案描述的特定特征、结构或特性包括在本技术的至少一个实施方案中。因此,整个说明书各个地方出现的短语″在一个实施方案中″或″在实施方案中″并不一定都指同一实施方案。此外,特定特征或特性可在一个或多个实施方案中以任何合适的方式组合。Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present technology. Thus, appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout the specification are not necessarily all referring to the same embodiment. Furthermore, the particular features or characteristics may be combined in any suitable manner in one or more embodiments.

整个说明书中对提及的相对术语诸如例如″通常″、″近似″和″约″在本文中用于表示所述值±10%。References throughout the specification to relative terms such as, for example, "generally", "approximately" and "about" are used herein to denote ±10% of the stated value.

如本文所用,术语″心房间装置″、″心房间分流器装置″、″IAD″、″IASD″、″心房间分流器″和″分流器″可互换地用于指在至少一种配置中包括分流元件的装置,该分流元件在患者的第一区域(例如,心脏的左心房)和第二区域(例如,心脏的右心房或冠状窦)之间提供血液流动。尽管根据心房(即左心房和右心房)之间的分流器进行了描述,但应当理解,本技术可同样适用于定位在心脏的其他腔室与通道之间的装置、或心血管系统的其他部分之间的装置。例如,本文所述的任何分流器(包括被称为″心房间″的那些)仍然可被使用和/或修改以在左心房(″LA″)与冠状窦之间、或右肺静脉与上腔静脉之间进行血液分流。此外,虽然本文的公开内容主要描述了将血液从LA分流到右心房(″RA″),但是本技术可容易地适于将血液从RA分流到LA以治疗某些病症,诸如肺动脉高压。例如,用于将血液从LA分流到RA的实施方案的镜像或者在一些情况下相同的实施方案可用于在某些患者中将血液从RA分流到LA。此外,虽然在心力衰竭治疗的上下文中描述了本文的某些实施方案,但是本文的任何实施方案,包括被称为心房间分流器的那些实施方案仍然可被使用和/或修改以治疗其他疾病或病症,包括其他身体区域的其他疾病或病症。例如,本文所述的系统可用于治疗以压力增加/或流体积聚为特征的疾病,包括但不限于青光眼、肺衰竭、肾衰竭、脑水肿等。As used herein, the terms "atrial device", "atrial shunt device", "IAD", "IASD", "atrial shunt" and "shunt" are used interchangeably to refer to a device in at least one configuration A device including a shunt element that provides blood flow between a first region (eg, the left atrium of the heart) and a second region (eg, the right atrium of the heart or the coronary sinus) of a patient. Although described in terms of a shunt between the atria (i.e., the left and right atria), it should be understood that the technology is equally applicable to devices positioned between other chambers and passages of the heart, or other components of the cardiovascular system. device between parts. For example, any of the shunts described herein (including those referred to as "atrial") can still be used and/or modified to connect between the left atrium ("LA") and the coronary sinus, or the right pulmonary vein and the superior vena cava Blood is shunted between veins. Furthermore, while the disclosure herein primarily describes shunting blood from the LA to the right atrium ("RA"), the present technique can be readily adapted to shunting blood from the RA to the LA to treat certain conditions, such as pulmonary hypertension. For example, a mirror image or in some cases the same embodiment of the embodiment used to shunt blood from LA to RA may be used to shunt blood from RA to LA in certain patients. Furthermore, while certain embodiments herein are described in the context of heart failure treatment, any of the embodiments herein, including those referred to as interatrial shunts, can still be used and/or modified to treat other conditions or conditions, including other diseases or conditions in other body areas. For example, the systems described herein can be used to treat diseases characterized by increased pressure and/or fluid accumulation, including but not limited to glaucoma, lung failure, kidney failure, cerebral edema, and the like.

本文提供的标题仅是为了方便,并不解释所要求保护的本技术的范围或含义。The headings provided herein are for convenience only and do not interpret the scope or meaning of the claimed technology.

A.用于治疗心力衰竭的心房间分流器A. Atrial shunts used to treat heart failure

心力衰竭(″HF″)可基于患者发生的射血分数分类为至少两类中的一类:(1)射血分数保留的心力衰竭(″HFpEF″),历史上称为舒张性心力衰竭,或(2)射血分数降低的心力衰竭(″HFrEF″),历史上称为收缩性心力衰竭。HFrEF的一个定义是低于35%-40%的左心室射血分数。尽管是相关的,但每种心力衰竭分类的基础病理生理学和治疗方案可能有很大差异。例如,虽然有一些既定的药物疗法可帮助治疗HFrEF的症状,并且有时减缓或逆转该疾病的进展,但对于HFpEF而言仅具有存疑功效的可用药物疗法是有限的。Heart failure ("HF") can be classified into one of at least two categories based on the ejection fraction that occurs in the patient: (1) heart failure with preserved ejection fraction ("HFpEF"), historically known as diastolic heart failure, Or (2) Heart Failure with Reduced Ejection Fraction ("HFrEF"), historically known as systolic heart failure. One definition of HFrEF is a left ventricular ejection fraction below 35%-40%. Although related, the underlying pathophysiology and treatment options for each heart failure classification can vary considerably. For example, while there are some established drug therapies that can help treat the symptoms of HFrEF, and sometimes slow or reverse the progression of the disease, available drug therapies with only questionable efficacy for HFpEF are limited.

在心力衰竭患者中,左心室(″LV″)中的异常功能导致LA中的压力积聚。这直接导致供给LA的肺静脉系统中的更高压力。升高的肺静脉压力将流体推出毛细血管并进入肺。这种流体积聚导致肺充血和许多心力衰竭的症状,包括呼吸短促和甚至轻微体力活动时的劳累迹象。HF的危险因素包括肾功能障碍、高血压、高脂血、糖尿病、吸烟、肥胖、老年和阻塞性睡眠呼吸暂停。HF患者可能具有增加的LV硬度,这导致在心脏舒张期左心室舒张的减少,从而导致增加的压力和心室的不充分填充。HF患者还可能具有增加的心房纤颤和肺动脉高压的风险,并且通常具有可能使治疗方案复杂化的其他合并症。In heart failure patients, abnormal function in the left ventricle ("LV") leads to pressure buildup in the LA. This directly leads to higher pressure in the pulmonary venous system supplying the LA. Elevated pulmonary venous pressure pushes fluid out of the capillaries and into the lungs. This fluid buildup leads to lung congestion and many of the symptoms of heart failure, including shortness of breath and signs of exertion during even light physical activity. Risk factors for HF include renal dysfunction, hypertension, hyperlipidemia, diabetes, smoking, obesity, old age, and obstructive sleep apnea. HF patients may have increased LV stiffness, which leads to a decrease in left ventricular relaxation during diastole, resulting in increased pressure and inadequate filling of the ventricle. Patients with HF may also have an increased risk of atrial fibrillation and pulmonary hypertension, and often have other comorbidities that can complicate treatment options.

心房间分流器最近已经被提出作为降低升高的左心房压力的方式,并且这种新兴类别的心血管治疗干预已经被证明具有显著的临床前景。图2示出了LA和RA之间的隔壁内的分流器的放置。大多数心房间分流器(例如,分流器10)涉及形成孔或将具有管腔的结构体插入心房间隔壁中,从而在LA与RA之间形成流体连通通路。因此,通过将LA卸载到RA中,可部分地缓解升高的左心房压力。在早期的临床试验中,已证明该方法改善心力衰竭的症状。Atrial shunts have recently been proposed as a way to reduce elevated left atrial pressure, and this emerging class of cardiovascular therapeutic intervention has proven to have significant clinical promise. Figure 2 shows the placement of the shunt in the bulkhead between LA and RA. Most interatrial shunts (eg, shunt 10 ) involve forming a hole or inserting a lumen structure into the interatrial septum to create a fluid communication pathway between the LA and RA. Thus, elevated left atrial pressure may be partially relieved by unloading the LA into the RA. In early clinical trials, the approach has been shown to improve symptoms of heart failure.

许多常规的心房间分流器的一个挑战是确定分流器管腔的最合适的尺寸和形状。管腔过小可能无法充分地卸载LA和缓解症状;管腔过大可能更普遍地使RA和右心脏超负荷,给患者带来新的问题。此外,减压与临床结果之间的关系以及优化结果所需的减压程度仍然没有被完全理解,部分是因为HFpEF的病理生理学(并且在较小程度上,HFrEF)没有被完全理解。因此,临床医生被迫在选择适当尺寸的分流器时做出最佳猜测(基于有限的临床证据),并且通常不能随时间调节尺寸。此外,临床医生必须基于一般因素(例如,患者的解剖结构的尺寸、在一次快照时获取的患者的血液动力学测量值等)和/或可用装置的设计而不是个体患者的健康和预期响应来选择分流器的尺寸。对于许多此类传统的装置,一旦装置被植入,临床医生就不具有例如响应于改变的患者状况(诸如疾病的进展)来调节或确定治疗的能力。相比之下,根据本技术的实施方案配置的心房间分流系统允许临床医生基于患者状况在手术期间或植入后选择尺寸。One challenge with many conventional interatrial shunts is determining the most appropriate size and shape for the shunt lumen. A too small lumen may not adequately unload the LA and relieve symptoms; a too large lumen may overload RA and the right heart more generally, creating new problems for the patient. Furthermore, the relationship between decompression and clinical outcome, and the degree of decompression required to optimize outcome, remains incompletely understood, in part because the pathophysiology of HFpEF (and, to a lesser extent, HFrEF) is not fully understood. As a result, clinicians are forced to make best guesses (based on limited clinical evidence) in selecting an appropriately sized shunt, and often cannot adjust the size over time. In addition, clinicians must base their decisions on general factors (e.g., size of the patient's anatomy, patient's hemodynamic measurements taken at one snapshot, etc.) and/or the design of available devices rather than the health and expected response of the individual patient. Select the size of the shunt. With many such conventional devices, once the device is implanted, the clinician does not have the ability to adjust or determine therapy, eg, in response to changing patient conditions, such as the progression of a disease. In contrast, an interatrial shunt system configured in accordance with embodiments of the present technology allows a clinician to select a size during surgery or after implantation based on the patient's condition.

B.可调节分流系统B. Adjustable shunt system

图3是根据本技术的实施方案配置的可调节分流系统300(″系统300″)的示意图。系统300包括分流元件302,该分流元件限定穿过其的管腔304。当跨隔壁S植入时,系统300可经由管腔304流体地连接LA和RA。因此,当分流元件302被植入隔壁内时,血液可经由管腔304从LA流动到RA(如箭头F所示)。分流元件302可包括图2中未示出的附加特征,诸如框架、锚定件、隔膜等。例如,分流元件302可包括诸如在国际专利申请号PCT/US2020/049996中描述的那些特征,该国际专利申请的公开内容全文以引用方式并入。3 is a schematic diagram of an adjustable shunt system 300 ("system 300") configured in accordance with embodiments of the present technology. System 300 includes a shunt element 302 that defines a lumen 304 therethrough. When implanted across the septum S, system 300 may fluidly connect LA and RA via lumen 304 . Therefore, when the shunt element 302 is implanted in the septum, blood can flow from LA to RA via the lumen 304 (as indicated by arrow F). Diverter element 302 may include additional features not shown in FIG. 2, such as frames, anchors, membranes, and the like. For example, the shunt element 302 may include features such as those described in International Patent Application No. PCT/US2020/049996, the disclosure of which is incorporated by reference in its entirety.

系统300还可包括致动元件306,该致动元件被配置为成选择性地改变分流元件302的几何结构(尺寸、形状等)和/或其他特性,以选择性地调整流体通过管腔304的流动。例如,致动元件306可被配置为响应于输入而选择性地增大管腔304的直径(例如,孔口直径、水力直径等)和/或选择性地减小管腔304的直径(例如,孔口直径、水力直径等)。在其他实施方案中,致动元件306被配置为以其他方式影响管腔304的形状和/或几何结构。因此,致动元件306可联接到分流元件302并且/或者可被包括在分流元件302内。在一些实施方案中,例如,致动元件306是分流元件302的一部分并且至少部分地限定管腔304。在其他实施方案中,致动元件306与分流元件302间隔开但可操作地联接到该分流元件。System 300 may also include an actuation element 306 configured to selectively alter the geometry (size, shape, etc.) and/or other characteristics of flow diverting element 302 to selectively adjust fluid passage through lumen 304 flow. For example, actuation element 306 may be configured to selectively increase the diameter of lumen 304 (e.g., orifice diameter, hydraulic diameter, etc.) and/or selectively decrease the diameter of lumen 304 (e.g., , orifice diameter, hydraulic diameter, etc.). In other embodiments, the actuation element 306 is configured to affect the shape and/or geometry of the lumen 304 in other ways. Accordingly, the actuation element 306 may be coupled to the diverter element 302 and/or may be included within the diverter element 302 . In some embodiments, for example, actuation element 306 is part of shunt element 302 and at least partially defines lumen 304 . In other embodiments, the actuation element 306 is spaced apart from but operatively coupled to the diverter element 302 .

在一些实施方案中,致动元件306的至少一部分包括形状记忆材料,诸如形状记忆金属或合金(例如,镍钛诺,包括基于镍钛诺的合金)、形状记忆聚合物或基于pH的形状记忆材料。在致动元件由形状记忆材料构成(在本文中可称为″形状记忆致动元件″)的实施方案中,形状记忆致动元件可被配置为响应于刺激(例如,热或机械负载)而改变几何结构(例如,在第一配置和第二配置之间变换)。例如,在一些实施方案中,当形状记忆致动元件处于第一材料状态(例如,马氏体材料状态或R相材料状态)时,形状记忆致动元件相对于其优选几何结构(例如,制造几何结构、原始几何结构、热定形几何结构等)变形。当经变形的形状记忆元件被加热到其转变温度(在一些实施方案中,该转变温度是大于体温的温度)以上时,形状记忆致动元件转变到第二材料状态(例如,R相材料状态或奥氏体材料状态),这可致使形状记忆致动元件朝向其优选几何结构移动。致动元件从变形位置朝向其优选几何结构的移动可调节管腔304的几何结构,如上所述。在国际申请号PCT/US2020/049996中描述了使用形状记忆致动元件包括结合形状记忆致动元件的各种可调节心房间分流器调节心房间分流的附加方面,该国际申请先前以引用方式并入本文。In some embodiments, at least a portion of the actuation element 306 includes a shape memory material, such as a shape memory metal or alloy (e.g., Nitinol, including Nitinol-based alloys), a shape memory polymer, or a pH-based shape memory material. Material. In embodiments where the actuation element is comprised of a shape memory material (which may be referred to herein as a "shape memory actuation element"), the shape memory actuation element may be configured to move in response to a stimulus (e.g., a thermal or mechanical load). Changing geometry (eg, transitioning between a first configuration and a second configuration). For example, in some embodiments, when the shape-memory actuation element is in a first material state (e.g., a martensitic material state or an R-phase material state), the shape-memory actuation element is relative to its preferred geometry (e.g., fabricated geometry, raw geometry, heat set geometry, etc.) deformation. When the deformed shape memory element is heated above its transition temperature (in some embodiments, the transition temperature is a temperature greater than body temperature), the shape memory actuated element transitions to a second material state (e.g., an R-phase material state or austenitic material state), which can cause the shape memory actuation element to move towards its preferred geometry. Movement of the actuation element from the deformed position toward its preferred geometry can adjust the geometry of the lumen 304, as described above. Additional aspects of adjusting interatrial shunts using shape memory actuation elements, including various adjustable interatrial shunts incorporating shape memory actuation elements, are described in International Application No. PCT/US2020/049996, previously incorporated by reference and into this article.

系统300还可包括能量传输装置322,该能量传输装置用于将能量(例如,功率)递送到系统300的植入部件(例如,下文所述的致动元件306和/或植入电子部件324)。能量传输装置322可包括患者身体外部的能够将能量无线传输到植入部件的任何装置或系统。例如,根据本领域技术人员已知的技术,能量传输装置322可被配置为传输射频(RF)能量、微波频率能量、其他形式的电磁能量、超声能量、热能或其他类型的能量。在一些实施方案中,能量传输装置322可递送频率在约1MHz和约1GHz之间的范围内(例如,1MHz、2MHz、3MHz、10MHz、100MHz、500MHz等)的能量,但其他频率也是可能的。在一些实施方案中,能量传输装置可生成朝向系统300的植入方面的电场和/或磁场。System 300 may also include an energy delivery device 322 for delivering energy (e.g., power) to implanted components of system 300 (e.g., actuation element 306 and/or implanted electronics 324 described below). ). Energy transmission device 322 may include any device or system external to the patient's body capable of wirelessly transmitting energy to an implanted component. For example, energy delivery device 322 may be configured to deliver radio frequency (RF) energy, microwave frequency energy, other forms of electromagnetic energy, ultrasonic energy, thermal energy, or other types of energy according to techniques known to those skilled in the art. In some embodiments, the energy delivery device 322 may deliver energy at a frequency in the range between about 1 MHz and about 1 GHz (eg, 1 MHz, 2 MHz, 3 MHz, 10 MHz, 100 MHz, 500 MHz, etc.), although other frequencies are possible. In some embodiments, an energy delivery device may generate an electric field and/or a magnetic field toward the implanted aspect of system 300 .

在一些实施方案中,能量传输装置322可包括被配置为至少暂时定位在患者身体内的一个或多个装置(例如,被配置为在手术期间导航接近系统300的能量递送导管)。例如,能量传输装置322可被经皮推进,直到能量传输装置322的远端上的发射器线圈接近(例如,在5cm内、在4cm内、在3cm内、在2cm内、在1cm内等)系统300的一个或多个植入部分,诸如致动元件306。一旦接近致动元件306或另一目标部件定位,能量传输装置322就可生成用于激活致动元件306的电磁场。值得注意的是,并且与在使用定位在患者外部的能量传输装置322时实现的电联接类似,能量递送导管不需要被定位成与系统300的任何植入部分诸如致动元件306直接接触。然而,代替定位在患者身体外部的非侵入性能量传输装置或除了定位在患者身体外部的非侵入性能量传输装置之外使用能量递送导管期望在需要更大量能量的实施方案中是有用的,因为使用接近目标定位的发射器时的联接效率期望比使用保持在患者身体外部的发射器时的联接效率高得多(例如,高至少约100%、高至少约1000%等)。下文参考图5更详细地描述其中使用能量递送导管的侵入性方法特别有用的代表性实施方案。In some embodiments, energy delivery device 322 may include one or more devices configured to be at least temporarily positioned within a patient's body (eg, an energy delivery catheter configured to navigate access to system 300 during surgery). For example, the energy delivery device 322 can be advanced percutaneously until the transmitter coil on the distal end of the energy delivery device 322 is in proximity (e.g., within 5 cm, within 4 cm, within 3 cm, within 2 cm, within 1 cm, etc.) One or more implanted portions of system 300 , such as actuation element 306 . Once positioned proximate to actuation element 306 or another target component, energy delivery device 322 may generate an electromagnetic field for activating actuation element 306 . Notably, and similar to the electrical coupling achieved when using energy delivery device 322 positioned external to the patient, the energy delivery catheter need not be positioned in direct contact with any implanted portion of system 300 such as actuation element 306 . However, the use of an energy delivery catheter instead of or in addition to a non-invasive energy delivery device positioned outside the patient's body is expected to be useful in embodiments requiring greater amounts of energy because The coupling efficiency is desirably much higher (eg, at least about 100% higher, at least about 1000% higher, etc.) when using a transmitter positioned close to the target than when using a transmitter that remains outside the patient's body. A representative embodiment in which an invasive method using an energy delivery catheter is particularly useful is described in more detail below with reference to FIG. 5 .

系统300还可包括电子部件324,该电子部件植入有分流元件302并且电联接在一起以形成电路(例如,RLC电路、谐振电路等)。电子部件324可包括例如电路中存在的常规电子部件,诸如电阻器、电容器和电感器。在一些实施方案中,电感器可以是能够联接到外部产生的电磁场的导线线圈或其他细丝。例如,在一些实施方案中,电感器是具有自感L的第一导线线圈(未示出)。能量传输装置322可具有第二导线线圈(未示出),该第二导线线圈被配置为保持在患者外部(或者至少保持与电子部件324间隔开,诸如定位在能量递送导管上),并且通过互感M联接到第一导线线圈。第一导线线圈的自感L用作电路中的电感器,而第一导线线圈和第二导线线圈的互感M用作将能量和/或功率从外部生成的磁场传递到第一导线线圈。在一些实施方案中,自感L可在约0.1μH和约10μH之间,互感M与自感L的比率(例如,M/L)可小于约0.10,并且第一导线线圈的直径与第二导线线圈的直径的比率可在约0.01至1.0之间。在一些实施方案中,第一导线线圈可用一匝或多匝成形的导线、印刷在非导电单层或多层基板上的导电图案、或形成为环绕由能量传输装置322产生的磁通量的另一导电结构来实现。System 300 may also include electronic components 324 implanted with shunt element 302 and electrically coupled together to form an electrical circuit (eg, RLC circuit, resonant circuit, etc.). Electronic components 324 may include, for example, conventional electronic components found in electrical circuits, such as resistors, capacitors, and inductors. In some embodiments, an inductor may be a coil of wire or other filament that can be coupled to an externally generated electromagnetic field. For example, in some embodiments, the inductor is a first wire coil (not shown) having a self-inductance L. The energy delivery device 322 may have a second wire coil (not shown) configured to remain external to the patient (or at least to remain spaced from the electronic components 324, such as positioned on an energy delivery catheter), and to A mutual inductance M is coupled to the first wire coil. The self-inductance L of the first wire coil acts as an inductor in the circuit, and the mutual inductance M of the first and second wire coils serves to transfer energy and/or power from an externally generated magnetic field to the first wire coil. In some embodiments, the self-inductance L can be between about 0.1 μH and about 10 μH, the ratio of the mutual inductance M to the self-inductance L (e.g., M/L) can be less than about 0.10, and the diameter of the first wire coil is the same as that of the second wire. The ratio of the diameters of the coils may be between about 0.01 and 1.0. In some embodiments, the first coil of wire may be one or more turns of shaped wire, a conductive pattern printed on a non-conductive single or multi-layer substrate, or another coil formed to surround the magnetic flux generated by the energy transfer device 322. Conductive structure to achieve.

如关于图3详细描述的,电子部件324形成的电路可从能量传输装置322接收能量和/或功率。例如,在一些实施方案中,能量传输装置322生成电磁场,并且电子部件324响应于暴露于电磁场而生成电流。电子部件324生成的电流可流动穿过致动元件306并且直接向该致动元件提供电力(例如,对该致动元件进行电阻加热)。例如,如关于图4更详细地描述的,致动元件306可并入到电子部件324形成的电路中,使得能量传输装置322可通过在电路中生成流动穿过致动元件306并且对该致动元件进行电阻加热的电流来直接向致动元件306供电。As described in detail with respect to FIG. 3 , electrical circuits formed by electronic components 324 may receive energy and/or power from energy transfer device 322 . For example, in some embodiments, energy transfer device 322 generates an electromagnetic field, and electronic component 324 generates an electrical current in response to exposure to the electromagnetic field. The electrical current generated by the electronics 324 may flow through the actuation element 306 and provide power directly to the actuation element (eg, resistive heating of the actuation element). For example, as described in more detail with respect to FIG. 4 , actuation element 306 may be incorporated into an electrical circuit formed by electronic component 324 such that energy transfer device 322 may pass through actuation element 306 by generating a flow in the circuit and actuate it. The actuating element 306 is directly powered by the current for resistive heating of the actuating element.

图4是根据本技术的实施方案的经由电子部件324(图3)形成并且用于向致动元件306供电的示例性电路的电路图。特别地,图4例示了被配置为经由能量传输装置322供电的谐振电路400。值得注意的是,因为致动元件306可通过电阻加热来供电并且不需要像许多常规致动器包括电动马达那样的特定电波形,所以致动元件306可直接并入到谐振电路400中。例如,在例示的实施方案中,致动元件306与谐振电路400的其他电子部件串联联接。在其他实施方案中,致动元件306可与谐振电路400的其他电子部件并联联接,或以其他合适配置联接。当谐振电路400(例如,经由图3的外部能量传输装置322)通电时,电流流动穿过致动元件306,从而对致动元件306进行电阻加热。在致动元件306由形状记忆材料构成的实施方案中,这种电阻加热可将形状记忆致动元件加热到其转变温度以上并且驱动引起管腔304中的几何结构改变的相位变换,如上文关于图3详细描述的。4 is a circuit diagram of an exemplary circuit formed via electronic components 324 ( FIG. 3 ) and used to power actuation element 306 in accordance with an embodiment of the present technology. In particular, FIG. 4 illustrates a resonant circuit 400 configured to be powered via an energy transfer device 322 . Notably, the actuation element 306 can be incorporated directly into the resonant circuit 400 because the actuation element 306 can be powered by resistive heating and does not require a specific electrical waveform like many conventional actuators, including electric motors. For example, in the illustrated embodiment, actuation element 306 is coupled in series with other electronic components of resonant circuit 400 . In other embodiments, the actuation element 306 may be coupled in parallel with other electronic components of the resonant circuit 400, or in other suitable configurations. When resonant circuit 400 is energized (eg, via external energy transfer device 322 of FIG. 3 ), current flows through actuation element 306 , thereby resistively heating actuation element 306 . In embodiments where the actuation element 306 is composed of a shape memory material, this resistive heating can heat the shape memory actuation element above its transition temperature and drive a phase shift that causes a change in geometry in the lumen 304, as described above with respect to Figure 3 is described in detail.

谐振电路400可由品质因数Q来表征,品质因数Q是存储在电路中的能量与每弧度谐振振荡所耗散的能量的比率并且由以下公式限定:The resonant circuit 400 can be characterized by a quality factor, Q, which is the ratio of the energy stored in the circuit to the energy dissipated per radian of resonant oscillation and is defined by the following formula:

在以上公式中,f等于谐振频率,L是电感器的电感,R1等于致动元件306的电阻,RL是电感器的电阻,并且RC是电容器的电阻。在一些实施方案中,RL具有在约0.1欧姆和约2欧姆之间的值,RC具有在约0.01欧姆和0.05欧姆之间的值,并且R1具有在约0.5欧姆和约10欧姆之间的值,但是在前述范围之外的值是可能的并且在本技术的范围内。In the above formula, f is equal to the resonant frequency, L is the inductance of the inductor, R1 is equal to the resistance of the actuation element 306, RL is the resistance of the inductor, and R C is the resistance of the capacitor. In some embodiments, RL has a value between about 0.1 ohms and about 2 ohms, RC has a value between about 0.01 ohms and 0.05 ohms, and R1 has a value between about 0.5 ohms and about 10 ohms , but values outside the foregoing ranges are possible and within the scope of the present technology.

谐振电路400可被设计以优化或以其他方式增强系统300的功能性。例如,与通常试图通过最小化电路中耗散的功率来最大化品质因数Q的常规谐振电路相反,谐振电路400可被设计成具有有意的″功率损耗″。特别地,致动元件306被设计成在电流流动穿过电路时增加电路中耗散的功率(从而降低品质因数Q),因为流动穿过致动元件306的电流导致的功率耗散驱动引起致动元件306的几何结构改变的温度改变。在一些实施方案中,例如,谐振电路400可具有小于约100诸如在约10和约100之间的品质因数Q。相比之下,常规无线电力传递电路通常具有大于100的品质因数Q。当致动元件306的电阻等于或至少近似等于RL+RC时,致动元件306中的功率耗散通常最大化。因此,在一些实施方案中,致动元件306的电阻等于或基本上等于RL和RC的总和,使得致动元件306的电阻与RL和RC的电阻的总和的比率在2.0和0.5之间,诸如,2.0、1.8、1.6、1.4、1.2、1.1、1.0、0.9、0.8、0.7、0.6或0.5。Resonant circuit 400 may be designed to optimize or otherwise enhance the functionality of system 300 . For example, resonant circuit 400 may be designed with intentional "power loss", as opposed to conventional resonant circuits which generally attempt to maximize the quality factor Q by minimizing the power dissipated in the circuit. In particular, the actuation element 306 is designed to increase the power dissipated in the circuit (thereby reducing the quality factor Q) when current flows through the circuit, since the power dissipation drive caused by the current flowing through the actuation element 306 causes The temperature change that changes the geometry of the moving element 306. In some implementations, resonant circuit 400 may have a quality factor Q of less than about 100, such as between about 10 and about 100, for example. In contrast, conventional wireless power transfer circuits typically have a quality factor Q greater than 100. Power dissipation in the actuation element 306 is generally maximized when the resistance of the actuation element 306 is equal, or at least approximately equal, to R L +R C . Thus, in some embodiments, the resistance of actuation element 306 is equal or substantially equal to the sum of RL and R C such that the ratio of the resistance of actuation element 306 to the sum of the resistances of RL and R C is between 2.0 and 0.5 Between, such as, 2.0, 1.8, 1.6, 1.4, 1.2, 1.1, 1.0, 0.9, 0.8, 0.7, 0.6 or 0.5.

谐振电路400还可被设计以使得当电流流动穿过电路400时,致动元件306具有比其他电子部件(例如,电感器、电容器等)大的功率耗散密度。例如,其他电子部件可(各自)具有大于致动元件306的表面面积的表面面积。在一些实施方案中,这可通过将其他电子部件设计成具有比致动元件306长的长度来实现,尽管其他配置也是可能的(例如,其他电子部件可具有比致动元件306大的周长)。由于致动元件306具有相对较小的表面面积,致动元件306中的功率耗散密度大于其他电子部件中的功率耗散密度。这有利地致使致动元件306在电流流动穿过电路400时,被加热到比其他电子部件更大的程度。Resonant circuit 400 may also be designed such that actuation element 306 has a greater power dissipation density than other electronic components (eg, inductors, capacitors, etc.) when current flows through circuit 400 . For example, the other electronic components may (each) have a surface area greater than the surface area of the actuation element 306 . In some embodiments, this can be achieved by designing the other electronic components to have a longer length than the actuation element 306, although other configurations are possible (e.g., other electronic components can have a greater perimeter than the actuation element 306 ). Due to the relatively small surface area of the actuation element 306, the power dissipation density in the actuation element 306 is greater than in other electronic components. This advantageously causes the actuation element 306 to be heated to a greater extent than other electronic components when current flows through the circuit 400 .

如上所述,将致动元件306并入到谐振电路400中通常在谐振电路400内提供附加电阻(并且因此提供较大功率耗散)。然而,这种附加电阻通常足够低从而不干扰电路谐振。As noted above, incorporating the actuation element 306 into the resonant circuit 400 generally provides additional resistance (and thus greater power dissipation) within the resonant circuit 400 . However, this additional resistance is usually low enough not to disturb the circuit resonance.

将致动元件306并入到谐振电路400中期望提供若干优点。例如,将致动元件306并入到谐振电路400中使得能够使用系统300的永久植入部分外部的能量传输装置(例如,图2的能量传输装置322)来直接加热致动元件306,并且因此直接激活该致动元件。相比之下,如果致动元件306未被并入到谐振电路400中,则系统300将需要能量存储部件(例如,可从谐振电路接收和存储能量的超级电容器)选择性地释放能量以加热致动元件。具有适于植入和/或递送(例如,经由导管插入术的经皮递送)到患者心脏中的尺寸和/或形状的此类能量存储元件通常具有有限的能量存储容量和/或放电特性,这会限制致动该致动元件的能力。Incorporating actuation element 306 into resonant circuit 400 is expected to provide several advantages. For example, incorporating actuation element 306 into resonant circuit 400 enables direct heating of actuation element 306 using an energy delivery device (e.g., energy delivery device 322 of FIG. 2 ) external to the permanently implanted portion of system 300, and thus The actuating element is activated directly. In contrast, if the actuation element 306 were not incorporated into the resonant circuit 400, the system 300 would require an energy storage component (e.g., a supercapacitor that could receive and store energy from the resonant circuit) to selectively release energy to heat actuating element. Such energy storage elements having a size and/or shape suitable for implantation and/or delivery (e.g., percutaneous delivery via catheterization) into a patient's heart typically have limited energy storage capacity and/or discharge characteristics, This limits the ability to actuate the actuation element.

相比之下,通过不依赖于植入能量存储部件,本技术不受能量存储部件的能量存储容量或其他特性的限制,而是依赖于外部能量传输装置(其可具有相对无限的能量供应)直接激活致动元件306。因此,在一些实施方案中,期望本技术提供不需要(永久地)植入能量存储部件来致动致动元件的可调节分流系统。然而,在一些实施方案中,可调节分流系统仍然可包括植入能量存储部件,用于为系统的其他方面(例如,传感器)供电和/或用于增加外部能量传输装置提供的功率。In contrast, by not relying on implanted energy storage components, the present technology is not limited by the energy storage capacity or other characteristics of the energy storage components, but instead relies on external energy transfer devices (which can have a relatively unlimited supply of energy) The actuation element 306 is directly activated. Accordingly, in some embodiments, it is desirable for the present technology to provide an adjustable shunt system that does not require (permanently) implanted energy storage components to actuate the actuation element. However, in some embodiments, adjustable shunt systems may still include implanted energy storage components for powering other aspects of the system (eg, sensors) and/or for augmenting the power provided by external energy delivery devices.

将致动元件306并入到谐振电路400中而不是依赖单独的能量存储部件的另一期望优点在于,即使在连续地递送能量时,系统300在致动元件306通电时也不生成直流(DC)(如果利用能量存储部件诸如超级电容器,则会生成直流)。不受理论的约束,这被期望减少/消除来自这种能量传输的电击的风险。Another desirable advantage of incorporating the actuation element 306 into the resonant circuit 400 rather than relying on a separate energy storage component is that the system 300 does not generate direct current (DC) when the actuation element 306 is energized, even when energy is delivered continuously. ) (if utilizing an energy storage component such as a supercapacitor, a direct current would be generated). Without being bound by theory, this is expected to reduce/eliminate the risk of electric shock from such energy transfer.

另选地或另外,本文所述的植入式装置和系统可包括与形状记忆致动元件成一体的谐振天线或谐振腔。在此类实施方案中,谐振天线或谐振腔可被配置为在约100MHz以上的频率下操作。响应于天线或腔中的谐振电路被供电,电流可流动穿过并加热形状记忆致动元件,如上所述。在其他实施方案中,本文所述的植入式装置和系统可包括压电声学谐振器,该压电声学谐振器被配置为从外部定位的超声源接收能量。压电声学谐振器可将所接收的能量转换成电流。压电声学谐振器还可与形状记忆致动元件可操作地联接(例如,串联联接),使得电流流动穿过形状记忆致动元件并且对该形状记忆致动元件进行电阻加热。Alternatively or additionally, the implantable devices and systems described herein may include a resonant antenna or cavity integral with the shape memory actuation element. In such embodiments, the resonant antenna or resonant cavity may be configured to operate at frequencies above about 100 MHz. In response to the antenna or resonant circuit in the cavity being powered, current may flow through and heat the shape memory actuation element, as described above. In other embodiments, the implantable devices and systems described herein may include piezoelectric acoustic resonators configured to receive energy from an externally positioned ultrasound source. Piezoacoustic resonators convert received energy into electrical current. The piezoacoustic resonator may also be operably coupled (eg, coupled in series) with the shape memory actuation element such that current flows through and resistively heats the shape memory actuation element.

如上所阐述,本技术可用于非侵入性地(例如,使用保持在患者外部的能量传输装置)向致动元件供电或侵入性地(例如,使用经皮推进朝向植入装置的能量传输装置)向致动元件供电。在一些实施方案中,系统被配置为使得用户(例如,医生)能够根据多种因素来选择非侵入性地或侵入性地向装置供电,这些多种因素包括治疗发生的环境/设定(例如,导管实验室的可用性)、能量需求、定时需求、患者因素(例如,风险因素)等。在不受理论约束的情况下,与向致动元件进行非侵入性供电(例如,发射器与接收器之间的期望能量联接通常小于1%)相比,向致动元件进行侵入性供电期望在能量传输装置之间提供更有效的能量联接(例如,发射器和接收器之间的期望能量联接为约10%至30%)。当然,在激活需要较低量的总能量传递的一些情况下,非侵入性地向致动元件供电可能是有利的,因为它不太复杂/侵入性较低。As explained above, the present technique can be used to power the actuation element non-invasively (e.g., using an energy delivery device that remains external to the patient) or invasively (eg, using an energy delivery device that is advanced percutaneously toward an implanted device) Power is supplied to the actuating element. In some embodiments, the system is configured to enable a user (e.g., physician) to choose to non-invasively or invasively power the device based on a variety of factors, including the environment/setting in which the therapy occurs (e.g., , catheterization laboratory availability), energy requirements, timing requirements, patient factors (eg, risk factors), etc. Without being bound by theory, invasive powering an actuation element is expected to Provides a more efficient energy coupling between energy transfer devices (eg, about 10% to 30% desired energy coupling between transmitter and receiver). Of course, in some cases where activation requires a lower amount of overall energy transfer, it may be advantageous to power the actuation element non-invasively, since it is less complex/less invasive.

图5是根据本技术的实施方案的用于部署具有形状记忆致动元件和分流元件的可调节分流系统(例如,图3的系统300、分流元件302和致动元件306)的方法500的流程图。方法500可从步骤502通过在目标位置处诸如跨心脏的隔壁部署具有形状记忆致动元件的分流系统而开始。例如,步骤502可包括:将承载分流系统的分流递送导管经皮推进到目标位置,从分流递送导管部署分流系统,以及抽回分流递送导管。在此类实施方案中,分流系统通常在部署之前以塌缩配置设置在导管内。在从导管部署时,分流系统通常朝向其部署配置伸展。然而,某些部件诸如形状记忆致动元件即使在从导管部署之后仍可保持至少部分变形(例如,折皱)。在一些实施方案中,形状记忆致动元件变形到影响其功能的程度,从而需要形状记忆致动元件的附加恢复。5 is a flowchart of a method 500 for deploying an adjustable shunt system having a shape memory actuation element and a shunt element (e.g., system 300, shunt element 302, and actuation element 306 of FIG. 3) in accordance with an embodiment of the present technology. picture. Method 500 may begin at step 502 by deploying a shunt system with shape memory actuated elements at a target location, such as across the septum of the heart. For example, step 502 may include percutaneously advancing a shunt delivery catheter carrying a shunt delivery catheter to a target site, deploying the shunt delivery catheter from the shunt delivery catheter, and withdrawing the shunt delivery catheter. In such embodiments, the shunt system is typically disposed within the catheter in a collapsed configuration prior to deployment. When deployed from the catheter, the shunt system typically stretches toward its deployed configuration. However, certain components, such as shape memory actuation elements, may remain at least partially deformed (eg, crimped) even after deployment from the catheter. In some embodiments, the shape memory actuation element deforms to such an extent that its function is affected, thereby requiring additional restoration of the shape memory actuation element.

方法500可在步骤504处通过将能量递送导管朝向分流系统经皮推进而继续。能量递送导管可被推进直到能量递送导管上的发射线圈被定位在分流系统的目标部件(例如,变形的致动元件)的5cm内、4cm内、3cm内、2cm内和/或1cm内。一旦能量递送导管上的线圈就位,方法500就可在步骤506处通过发起能量递送导管和分流系统之间的功率传递以激活包括形状记忆致动元件的谐振电路来继续。这可包括:从发射线圈发出电磁场并且响应于电磁场在谐振电路中感应电流,如参考图3和图4所描述的。这致使电流流动穿过形状记忆致动元件,并且对该形状记忆致动元件进行电阻加热。可将形状记忆致动元件加热到转变温度以上,使得其转变到相对较硬的材料状态(例如,奥氏体),这致使形状记忆致动元件朝向其优选几何结构移动并且恢复其优选几何结构。Method 500 may continue at step 504 by percutaneously advancing the energy delivery catheter toward the shunt system. The energy delivery catheter may be advanced until the transmit coil on the energy delivery catheter is positioned within 5 cm, within 4 cm, within 3 cm, within 2 cm, and/or within 1 cm of a target component of the shunt system (eg, the deformed actuation element). Once the coil on the energy delivery catheter is in place, method 500 may continue at step 506 by initiating power transfer between the energy delivery catheter and the shunt system to activate the resonant circuit including the shape memory actuation element. This may include emitting an electromagnetic field from the transmit coil and inducing a current in the resonant circuit in response to the electromagnetic field, as described with reference to FIGS. 3 and 4 . This causes a current to flow through the shape memory actuation element and resistive heating of the shape memory actuation element. The shape-memory actuation element can be heated above the transition temperature such that it transforms to a relatively harder material state (eg, austenite), which causes the shape-memory actuation element to move toward and restore its preferred geometry .

尽管步骤504和506描述了利用侵入性能量递送装置来在部署分流系统之后恢复形状记忆致动元件的形状,但在一些实施方案中,可省略步骤504,并且可使用保持在患者身体外部的能量传输装置来执行步骤506。然而,在一些实施方案中,利用步骤504和506描述的侵入性方法是优选的,因为至少初始地恢复形状记忆致动元件所需的能量的量足够大,以至于使用非侵入性方法是不切实际的和/或低效的。然而,一旦形状记忆致动元件已经恢复,非侵入性方法可用于对形状记忆致动元件进行另外的调节。Although steps 504 and 506 describe the use of an invasive energy delivery device to restore the shape of the shape memory actuated element after deployment of the shunt system, in some embodiments step 504 may be omitted and energy held outside the patient's body may be used The transmission device executes step 506. However, in some embodiments, using the invasive methods described in steps 504 and 506 is preferred because the amount of energy required to at least initially restore the shape memory actuated element is large enough that using non-invasive methods is not an option. practical and/or inefficient. However, once the shape memory actuation element has recovered, non-invasive methods can be used to make additional adjustments to the shape memory actuation element.

如本领域技术人员从本文的公开内容将理解的,在不脱离本技术的范围的情况下,可省略上述心房间分流系统的各种部件。同样,在不脱离本技术的范围的情况下,可将上文未明确描述的附加部件添加到心房间分流系统。此外,本文所述的电路可并入到除心脏分流器之外的其他类型的植入式医疗装置中。因此,本技术不限于本文明确标识的配置,而是涵盖所述系统的变型和更改。As those skilled in the art will appreciate from the disclosure herein, various components of the interatrial shunt system described above may be omitted without departing from the scope of the present technology. Likewise, additional components not expressly described above may be added to the interatrial shunt system without departing from the scope of the present technology. Furthermore, the circuits described herein may be incorporated into other types of implantable medical devices besides cardiac shunts. Accordingly, the technology is not limited to the configurations expressly identified herein, but covers variations and adaptations of the systems described.

实施例Example

本技术的若干方面在以下实施例中阐述:Several aspects of the present technology are illustrated in the following examples:

1.一种植入式医疗装置,该装置包括:1. An implantable medical device comprising:

致动元件,该致动元件由形状记忆材料构成并且具有优选的几何结构,其中,当该致动元件相对于其优选的几何结构变形并且被加热到转变温度以上时,该致动元件被配置为朝向其优选的几何结构移动;以及an actuation element comprised of a shape memory material and having a preferred geometry, wherein when the actuation element is deformed relative to its preferred geometry and heated above its transition temperature, the actuation element is configured To move towards its preferred geometry; and

一个或多个电子部件,该一个或多个电子部件被配置为在暴露于电磁场时生成电流,其中该一个或多个电子部件形成包括该致动元件的谐振电路,并且其中该谐振电路被配置为使得在该一个或多个电子部件生成该电流时,该电流流动穿过该致动元件并且对该致动元件进行电阻加热。one or more electronic components configured to generate an electrical current when exposed to an electromagnetic field, wherein the one or more electronic components form a resonant circuit including the actuating element, and wherein the resonant circuit is configured Such that when the one or more electronic components generate the current, the current flows through the actuation element and resistively heats the actuation element.

2.根据实施例1所述的装置,其中该一个或多个电子部件被配置为在暴露于由定位在患者外部的能量源生成的电磁场时生成电流。2. The device of embodiment 1, wherein the one or more electronic components are configured to generate an electrical current upon exposure to an electromagnetic field generated by an energy source positioned external to the patient.

3.根据实施例1所述的装置,其中该一个或多个电子部件被配置为在暴露于由定位在该患者内并且与该一个或多个电子部件间隔开的能量源生成的电磁场时生成电流。3. The device of embodiment 1, wherein the one or more electronic components are configured to generate an electromagnetic field upon exposure to an electromagnetic field generated by an energy source positioned within the patient and spaced from the one or more electronic components current.

4.根据实施例1所述的装置,其中该一个或多个电子部件被配置为响应于射频(RF)和/或微波能量的递送而生成电流。4. The device of embodiment 1, wherein the one or more electronic components are configured to generate an electrical current in response to delivery of radio frequency (RF) and/or microwave energy.

5.根据实施例1至4中任一项所述的装置,其中该谐振电路是RLC电路。5. The apparatus of any one of embodiments 1 to 4, wherein the resonant circuit is an RLC circuit.

6.根据实施例1至5中任一项所述的装置,其中该致动元件提供的第一电阻和该一个或多个电子部件提供的第二电阻之间的比率在约2∶1和0.5∶1之间。6. The device of any one of embodiments 1 to 5, wherein the ratio between the first resistance provided by the actuation element and the second resistance provided by the one or more electronic components is between about 2:1 and Between 0.5:1.

7.根据实施例1至6中任一项所述的装置,其中该致动元件具有第一表面面积,并且其中该一个或多个电子部件具有大于该第一表面面积的第二表面面积。7. The device of any one of embodiments 1 to 6, wherein the actuation element has a first surface area, and wherein the one or more electronic components have a second surface area that is greater than the first surface area.

8.根据实施例7所述的装置,其中,当该电流流动穿过该一个或多个电子部件和该致动元件时,由于该第二表面面积大于该第一表面面积,该致动元件中的第一功率耗散密度大于该一个或多个电子部件中的第二功率耗散密度。8. The device of embodiment 7, wherein when the current flows through the one or more electronic components and the actuation element, the actuation element is The first power dissipation density in the one or more electronic components is greater than the second power dissipation density in the one or more electronic components.

9.根据实施例7所述的装置,其中该致动元件具有第一长度,并且其中该一个或多个电子部件具有大于该第一长度的第二长度。9. The device of embodiment 7, wherein the actuation element has a first length, and wherein the one or more electronic components have a second length that is greater than the first length.

10.根据实施例1至9中任一项所述的装置,其中该致动元件具有第一电阻并且该一个或多个电子部件共同具有第二电阻,并且其中该第一电阻与该第二电阻近似相同。10. The device according to any one of embodiments 1 to 9, wherein the actuating element has a first resistance and the one or more electronic components collectively have a second resistance, and wherein the first resistance and the second The resistances are approximately the same.

11.根据实施例1至10中任一项所述的装置,其中该谐振电路被配置为在该电流流动穿过该致动元件时耗散功率。11. The device of any one of embodiments 1 to 10, wherein the resonant circuit is configured to dissipate power when the current flows through the actuation element.

12.根据实施例1至11中任一项所述的装置,其中该谐振电路具有小于100的品质因数。12. The apparatus of any one of embodiments 1 to 11, wherein the resonant circuit has a quality factor of less than 100.

13.根据实施例1至12中任一项所述的装置,其中该致动元件与该一个或多个电子部件串联。13. The device of any one of embodiments 1 to 12, wherein the actuation element is in series with the one or more electronic components.

14.根据实施例1至13中任一项所述的装置,其中该形状记忆材料包括合金,该合金包含镍、钛和铜中的一种或多种。14. The device of any one of embodiments 1 to 13, wherein the shape memory material comprises an alloy comprising one or more of nickel, titanium and copper.

15.根据实施例1至14中任一项所述的装置,其中,当植入人类患者体内时,该装置被配置为在第一身体区域和第二身体区域之间分流流体。15. The device of any one of embodiments 1 to 14, wherein the device is configured to divert fluid between a first body region and a second body region when implanted in a human patient.

16.根据实施例15所述的装置,该装置还包括:分流元件,该分流元件具有延伸穿过其的管腔并且被配置为使得当该分流元件被植入该患者体内时,该管腔流体地连接该第一身体区域和该第二身体区域,其中该致动元件被配置为调节该管腔的几何结构。16. The device of embodiment 15, further comprising: a shunt element having a lumen extending therethrough and configured such that when the shunt element is implanted in the patient, the lumen The first body region and the second body region are fluidly connected, wherein the actuation element is configured to adjust the lumen geometry.

17.一种与植入式医疗装置一起使用的电路,该电路包括:17. An electrical circuit for use with an implantable medical device, the electrical circuit comprising:

一个或多个电子部件,该一个或多个电子部件被配置为在暴露于电磁场时生成电流;和one or more electronic components configured to generate electrical current when exposed to an electromagnetic field; and

形状记忆致动元件,该形状记忆致动元件与具有该一个或多个电子部件的电路成一体,a shape memory actuation element integrated with an electrical circuit having the one or more electronic components,

其中该一个或多个电子部件响应于暴露于该电磁场而生成的该电流流动穿过该形状记忆致动元件并且对该形状记忆致动元件进行电阻加热。Wherein the current generated by the one or more electronic components in response to exposure to the electromagnetic field flows through the shape memory actuation element and resistively heats the shape memory actuation element.

18.根据实施例17所述的电路,其中该电路是谐振电路。18. The circuit of embodiment 17, wherein the circuit is a resonant circuit.

19.根据实施例17所述的电路,其中该电路是RLC电路。19. The circuit of embodiment 17, wherein the circuit is an RLC circuit.

20.根据实施例17至19中任一项所述的电路,其中该形状记忆致动元件提供的第一电阻和该一个或多个电子部件提供的第二电阻之间的比率在约2.0∶1和0.5∶1之间。20. The circuit of any one of embodiments 17 to 19, wherein the ratio between the first resistance provided by the shape memory actuation element and the second resistance provided by the one or more electronic components is about 2.0: Between 1 and 0.5:1.

21.根据实施例17至20中任一项所述的电路,其中该形状记忆致动元件具有第一表面面积,并且其中该一个或多个电子部件具有大于该第一表面面积的第二表面面积。21. The circuit of any one of embodiments 17 to 20, wherein the shape memory actuation element has a first surface area, and wherein the one or more electronic components have a second surface that is greater than the first surface area area.

22.根据实施例21所述的电路,其中,当该电流流动穿过该一个或多个电子部件和该致动元件时,由于该第二表面面积大于该第一表面面积,该致动元件中的第一功率耗散密度大于该一个或多个电子部件中的第二功率耗散密度。22. The circuit of embodiment 21, wherein, when the current flows through the one or more electronic components and the actuation element, the actuation element due to the second surface area being greater than the first surface area The first power dissipation density in the one or more electronic components is greater than the second power dissipation density in the one or more electronic components.

23.根据实施例21所述的电路,其中该致动元件具有第一长度,并且其中该一个或多个电子部件具有大于该第一长度的第二长度。23. The circuit of embodiment 21, wherein the actuation element has a first length, and wherein the one or more electronic components have a second length that is greater than the first length.

24.根据实施例17至23中任一项所述的电路,其中该形状记忆致动元件具有第一电阻并且该一个或多个电子部件共同具有第二电阻,并且其中该第一电阻与该第二电阻相同。24. The circuit of any one of embodiments 17 to 23, wherein the shape memory actuation element has a first resistance and the one or more electronic components collectively have a second resistance, and wherein the first resistance and the The second resistor is the same.

25.根据实施例17至24中任一项所述的电路,其中该电路被配置为在该电流流动穿过该形状记忆致动元件时耗散功率。25. The circuit of any one of embodiments 17 to 24, wherein the circuit is configured to dissipate power when the current flows through the shape memory actuation element.

26.根据实施例17至25中任一项所述的电路,其中该电路具有小于100的品质因数。26. The circuit of any one of embodiments 17-25, wherein the circuit has a figure of merit of less than 100.

27.根据实施例17至26中任一项所述的电路,其中该形状记忆致动元件与该一个或多个电子部件串联。27. The circuit of any one of embodiments 17 to 26, wherein the shape memory actuation element is in series with the one or more electronic components.

28.根据实施例17至27中任一项所述的电路,其中该形状记忆致动元件具有转变温度,并且其中该电路被配置为使得当该一个或多个电子部件暴露于该电磁场时,所生成的电流将该形状记忆致动元件的至少一部分电阻加热到其转变温度以上。28. The circuit of any one of embodiments 17 to 27, wherein the shape memory actuation element has a transition temperature, and wherein the circuit is configured such that when the one or more electronic components are exposed to the electromagnetic field, The generated electrical current heats at least a portion of the resistance of the shape memory actuation element above its transition temperature.

29.一种用于控制植入患者体内的医疗装置的方法,该方法包括:29. A method for controlling a medical device implanted in a patient, the method comprising:

朝向植入该患者体内的一个或多个电子部件引导能量,其中该电子部件形成谐振电路,该谐振电路包括可操作地联接到该植入医疗装置的致动元件;以及directing energy toward one or more electronic components implanted in the patient, wherein the electronic components form a resonant circuit including an actuation element operatively coupled to the implanted medical device; and

响应于该能量,在该谐振电路中自动生成电流,其中该电流流动穿过该致动元件并且对该致动元件进行电阻加热。In response to the energy, a current is automatically generated in the resonant circuit, wherein the current flows through the actuation element and resistively heats the actuation element.

30.根据实施例29所述的方法,其中朝向该一个或多个电子部件引导该能量包括:引导来自定位在该患者外部的能量源的能量。30. The method of embodiment 29, wherein directing the energy toward the one or more electronic components comprises directing energy from an energy source positioned external to the patient.

31.根据实施例29所述的方法,其中朝向该一个或多个电子部件引导该能量包括:引导来自暂时定位在该患者体内但与该一个或多个电子部件间隔开的能量源的能量。31. The method of embodiment 29, wherein directing the energy toward the one or more electronic components comprises directing energy from an energy source temporarily positioned within the patient but spaced from the one or more electronic components.

32.根据实施例29至31中任一项所述的方法,其中朝向该一个或多个电子部件引导该能量包括:在该一个或多个电子部件周围生成电磁场。32. The method of any one of embodiments 29-31, wherein directing the energy toward the one or more electronic components comprises generating an electromagnetic field around the one or more electronic components.

33.根据实施例29至32中任一项所述的方法,其中朝向该一个或多个电子部件引导该能量包括:朝向该一个或多个电子部件引导RF或微波能量。33. The method of any one of embodiments 29-32, wherein directing the energy toward the one or more electronic components comprises directing RF or microwave energy toward the one or more electronic components.

34.根据实施例29至33中任一项所述的方法,其中该致动元件由形状记忆材料构成,并且其中对该致动元件进行电阻加热将该致动元件加热到转变温度以上,其中该转变温度是大于体温的温度。34. The method of any one of embodiments 29 to 33, wherein the actuation element is comprised of a shape memory material, and wherein resistively heating the actuation element heats the actuation element above a transition temperature, wherein The transition temperature is a temperature greater than body temperature.

35.根据实施例34所述的方法,其中将该致动元件加热到该转变温度以上使该致动元件从其相对于优选几何结构变形的第一配置变换为呈现其优选几何结构的第二配置和/或朝向该第二配置变换。35. The method of embodiment 34, wherein heating the actuating element above the transition temperature transforms the actuating element from a first configuration in which it deforms relative to its preferred geometry to a second configuration in which it assumes its preferred geometry. configuration and/or transition towards the second configuration.

36.根据实施例35所述的方法,其中将该致动元件从该第一配置朝向该第二配置移动控制该植入医疗装置的一个或多个操作。36. The method of embodiment 35, wherein moving the actuation element from the first configuration toward the second configuration controls one or more operations of the implanted medical device.

37.根据实施例36所述的方法,其中该植入医疗装置是流体地连接第一身体区域和第二身体区域的分流器,并且其中将该致动元件从该第一配置朝向该第二配置移动调节该分流器的几何结构。37. The method of embodiment 36, wherein the implanted medical device is a shunt fluidly connecting a first body region and a second body region, and wherein the actuating element is directed from the first configuration toward the second body region Configuration moves adjust the geometry of the splitter.

38.一种用于部署具有形状记忆致动元件的可调节分流系统的方法,该方法包括:38. A method for deploying an adjustable shunt system having a shape memory actuation element, the method comprising:

在该患者体内的目标位置处部署包括该形状记忆致动元件的该可调节分流系统,其中该形状记忆致动元件在该可调节分流系统的部署之后相对于优选几何结构变形;deploying the adjustable shunt system comprising the shape memory actuation element at a target location within the patient, wherein the shape memory actuation element deforms relative to a preferred geometry after deployment of the adjustable shunt system;

朝向该分流系统经皮推进能量递送导管,直到该能量递送导管接近该可调节分流系统;以及advancing an energy delivery catheter percutaneously toward the shunt system until the energy delivery catheter approaches the adjustable shunt system; and

发起该能量递送导管和该分流系统之间的功率传递以在包括该形状记忆致动元件的谐振电路中感应电流,initiating power transfer between the energy delivery catheter and the shunt system to induce a current in a resonant circuit including the shape memory actuation element,

其中该电流对该形状记忆致动元件进行电阻加热。Wherein the current resistively heats the shape memory actuation element.

39.根据实施例38所述的方法,其中该能量递送导管是第一导管,并且其中在该目标位置处部署该可调节分流系统包括:朝向该目标位置经皮推进与该第一导管不同的第二导管,该第二导管承载该可调节分流系统。39. The method of embodiment 38, wherein the energy delivery catheter is a first catheter, and wherein deploying the adjustable shunt system at the target location comprises: percutaneously advancing a different catheter than the first catheter toward the target location A second conduit carrying the adjustable shunt system.

40.根据实施例38或39所述的方法,其中经皮推进该能量递送导管直到该能量递送导管接近该可调节分流系统包括:将该能量递送导管承载的发射器线圈定位在该可调节分流系统的5cm内。40. The method of embodiment 38 or 39, wherein percutaneously advancing the energy delivery catheter until the energy delivery catheter is in proximity to the adjustable shunt system comprises: positioning a transmitter coil carried by the energy delivery catheter over the adjustable shunt within 5cm of the system.

41.根据实施例40所述的方法,其中经皮推进该能量递送导管直到该能量递送导管接近该可调节分流系统包括:将该发射器线圈定位在该可调节分流系统的2cm内。41. The method of embodiment 40, wherein percutaneously advancing the energy delivery catheter until the energy delivery catheter approaches the adjustable shunt system comprises positioning the transmitter coil within 2 cm of the adjustable shunt system.

42.根据实施例40所述的方法,其中该发射器线圈不接触该可调节分流系统。42. The method of embodiment 40, wherein the transmitter coil does not contact the adjustable shunt system.

43.根据实施例38至42中任一项所述的方法,其中该电流将该形状记忆致动元件电阻加热到转变温度以上,并且致使该形状记忆致动元件从变形配置朝向其优选几何结构移动。43. The method of any one of embodiments 38 to 42, wherein the electrical current heats the shape memory actuation element resistively above the transition temperature and causes the shape memory actuation element to move from a deformed configuration towards its preferred geometry move.

结论in conclusion

本公开的实施方案可包括以下部件中的一些或全部:电池、超级电容器或其他合适的电源;微控制器、FPGA、ASIC或能够存储和执行驱动植入物的操作的软件和/或固件的其他可编程部件或系统;诸如RAM或ROM的存储器,用于存储与植入物和/或其操作相关联的数据和/或软件/固件;无线通信硬件,诸如被配置为经由蓝牙、WiFi或本领域已知的其他协议进行传输的天线系统;能量收集装置,例如能够接收和/或读取外部提供的信号的线圈或天线,该外部提供的信号可用于为装置供电、为电池充电、启动来自传感器的读取或用于其他目的。实施方案还可包括一个或多个传感器,诸如压力传感器、阻抗传感器、加速度计、力/应变传感器、温度传感器、流量传感器、光学传感器、相机、麦克风或其他声学传感器、超声传感器、ECG或其他心律传感器、SpO2以及适于测量组织和/或血气水平的其他传感器、血量传感器以及本领域技术人员已知的其他传感器。实施方案可包括不透射线的和/或超声反射的部分,以便于使用诸如荧光镜透视检查法、超声波检查法或其他成像方法的技术来进行图像引导的植入或图像引导的手术。系统的实施方案可包括专用的递送导管/系统,其适于递送植入物和/或执行手术。系统可包括诸如导丝、护套、扩张器和多个递送导管的部件。部件可经由线上、快速互换、组合或其他方法来互换。Embodiments of the present disclosure may include some or all of the following components: batteries, supercapacitors, or other suitable power sources; microcontrollers, FPGAs, ASICs, or software and/or firmware capable of storing and executing operations that drive the implant Other programmable components or systems; memory such as RAM or ROM for storing data and/or software/firmware associated with the implant and/or its operation; wireless communication hardware such as configured to communicate via Bluetooth, WiFi or Antenna systems for transmission by other protocols known in the art; energy harvesting devices such as coils or antennas capable of receiving and/or reading externally provided signals that can be used to power the device, charge batteries, start Readings from sensors or for other purposes. Embodiments may also include one or more sensors such as pressure sensors, impedance sensors, accelerometers, force/strain sensors, temperature sensors, flow sensors, optical sensors, cameras, microphones or other acoustic sensors, ultrasound sensors, ECG or other cardiac rhythm sensors sensors, SpO2 and other sensors suitable for measuring tissue and/or blood gas levels, blood volume sensors, and other sensors known to those skilled in the art. Embodiments may include radiopaque and/or ultrasound reflective portions to facilitate image-guided implantation or image-guided surgery using techniques such as fluoroscopy, sonography, or other imaging methods. Embodiments of the system may include a dedicated delivery catheter/system adapted to deliver the implant and/or perform the procedure. The system may include components such as a guide wire, a sheath, a dilator, and multiple delivery catheters. Components may be interchanged via in-line, quick swap, combination, or other methods.

本技术的实施方案的以上详细描述并非旨在是详尽无遗的或是将本技术限于以上所公开的精确形式。尽管出于说明的目的在上文中描述了本技术的特定实施方案和实施例,但是相关领域的技术人员将认识到,在本技术的范围内可进行各种等效修改。例如,尽管以给定的顺序给出步骤,但另选的实施方案可以不同的顺序执行步骤。也可组合本文所述的各种实施方案,以提供其他实施方案。例如,尽管本公开已经被编写为描述通常被描述为用于在LA与RA之间、在LV与右心室(RV)之间、或在LA与冠状窦之间形成流体连通路径的装置,但应当理解,类似的实施方案也可用于心脏的其他腔室之间的分流器或用于身体的其他区域中的分流器。The above detailed descriptions of embodiments of the technology are not intended to be exhaustive or to limit the technology to the precise forms disclosed above. While specific embodiments of, and examples for, the technology are described above for illustrative purposes, various equivalent modifications are possible within the scope of the technology, as those skilled in the relevant art will recognize. For example, although steps are presented in a given order, alternative embodiments may perform steps in a different order. The various embodiments described herein can also be combined to provide other embodiments. For example, although this disclosure has been written to describe devices generally described as being used to create a fluid communication pathway between the LA and the RA, between the LV and the right ventricle (RV), or between the LA and the coronary sinus, It should be understood that similar embodiments may also be used for shunts between other chambers of the heart or for shunts in other regions of the body.

除非上下文另有明确要求,否则在说明书和实施例通篇中,词语″包括″、″包含″等应以包括在内的意义来解释,这与排他性或穷举性的意义相反;也就是说,在″包括但不限于″的意义上。如本文所用,术语″连接″、″联接″或其任何变型意指两个或更多个元件之间的任何直接或间接的连接或联接;元件之间的联接或连接可为物理的、逻辑的或它们的组合。另外,当在本申请中使用时,词语″本文″、″上文″、″下文″和类似含义的词语应指作为整体的本申请而不是本申请的任何特定部分。在上下文允许的情况下,上述具体实施方式中使用单数或复数的词语也可分别包括复数或单数。如本文所用,如在″A和/或B″中的短语″和/或″是指单独的A、单独的B以及A和B。外,术语″包括″自始至终均指至少包括所提及的特征,这样就不排除任何更多数量的相同特征和/或其他类型的特征。还应当理解,这里为了说明目的已经描述了特定的实施方案,但是在不偏离本技术的情况下可以进行各种修改。此外,虽然已在这些实施方案的上下文中描述了与本技术的某些实施方案相关联的优点,但其他实施方案也可展现此类优点,并且并非所有实施方案都必须展现此类优点才属于本技术的范围。因此,本公开和相关技术可以包括本文未明确示出或描述的其他实施方案。Unless the context clearly requires otherwise, throughout the specification and examples, the words "comprise", "comprising", etc. are to be interpreted in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is , in the sense of "including but not limited to". As used herein, the terms "connected", "coupled" or any variation thereof mean any direct or indirect connection or connection between two or more elements; the connection or connection between elements may be physical, logical or a combination of them. Additionally, the words "herein," "above," "below," and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words using singular or plural in the above specific embodiments may also include plural or singular, respectively. As used herein, the phrase "and/or" as in "A and/or B" refers to A alone, B alone, and A and B. Furthermore, the term "comprising" throughout means including at least the mentioned features, such that any greater number of the same features and/or other types of features are not excluded. It should also be understood that specific embodiments have been described herein for purposes of illustration, but that various modifications may be made without departing from the technology. Furthermore, while advantages associated with certain embodiments of the present technology have been described in the context of these embodiments, other embodiments may exhibit such advantages as well, and not all embodiments must exhibit such advantages to be considered scope of this technology. Accordingly, the present disclosure and related art may encompass other embodiments not expressly shown or described herein.

Claims (43)

1.一种植入式医疗装置,所述装置包括:1. An implantable medical device, said device comprising: 致动元件,所述致动元件由形状记忆材料构成并且具有优选的几何结构,其中,当所述致动元件相对于其优选的几何结构变形并且被加热到转变温度以上时,所述致动元件被配置为朝向其优选的几何结构移动;以及an actuation element comprised of a shape memory material and having a preferred geometry, wherein when the actuation element is deformed relative to its preferred geometry and heated above its transition temperature, the actuation the element is configured to move towards its preferred geometry; and 一个或多个电子部件,所述一个或多个电子部件被配置为在暴露于电磁场时生成电流,其中所述一个或多个电子部件形成包括所述致动元件的谐振电路,并且其中所述谐振电路被配置为使得在所述一个或多个电子部件生成所述电流时,所述电流流动穿过所述致动元件并且对所述致动元件进行电阻加热。one or more electronic components configured to generate an electrical current when exposed to an electromagnetic field, wherein the one or more electronic components form a resonant circuit including the actuation element, and wherein the The resonant circuit is configured such that when the one or more electronic components generate the current, the current flows through the actuation element and resistively heats the actuation element. 2.根据权利要求1所述的装置,其中所述一个或多个电子部件被配置为在暴露于由定位在患者外部的能量源生成的电磁场时生成电流。2. The apparatus of claim 1, wherein the one or more electronic components are configured to generate an electrical current upon exposure to an electromagnetic field generated by an energy source positioned external to the patient. 3.根据权利要求1所述的装置,其中所述一个或多个电子部件被配置为在暴露于由定位在所述患者体内并且与所述一个或多个电子部件间隔开的能量源生成的电磁场时生成电流。3. The apparatus of claim 1 , wherein the one or more electronic components are configured to be exposed to energy generated by an energy source positioned within the patient and spaced apart from the one or more electronic components. An electric current is generated in an electromagnetic field. 4.根据权利要求1所述的装置,其中所述一个或多个电子部件被配置为响应于射频(RF)和/或微波能量的递送而生成电流。4. The apparatus of claim 1, wherein the one or more electronic components are configured to generate an electrical current in response to delivery of radio frequency (RF) and/or microwave energy. 5.根据权利要求1所述的装置,其中所述谐振电路是RLC电路。5. The apparatus of claim 1, wherein the resonant circuit is an RLC circuit. 6.根据权利要求1所述的装置,其中所述致动元件提供的第一电阻和所述一个或多个电子部件提供的第二电阻之间的比率在约2:1和0.5:1之间。6. The device of claim 1, wherein a ratio between the first resistance provided by the actuation element and the second resistance provided by the one or more electronic components is between about 2:1 and 0.5:1 between. 7.根据权利要求6所述的装置,其中所述致动元件具有第一表面面积,并且其中所述一个或多个电子部件具有大于所述第一表面面积的第二表面面积。7. The device of claim 6, wherein the actuation element has a first surface area, and wherein the one or more electronic components have a second surface area greater than the first surface area. 8.根据权利要求7所述的装置,其中,当所述电流流动穿过所述一个或多个电子部件和所述致动元件时,由于所述第二表面面积大于所述第一表面面积,所述致动元件中的第一功率耗散密度大于所述一个或多个电子部件中的第二功率耗散密度。8. The device of claim 7, wherein when the current flows through the one or more electronic components and the actuation element, since the second surface area is greater than the first surface area , a first power dissipation density in the actuation element is greater than a second power dissipation density in the one or more electronic components. 9.根据权利要求7所述的装置,其中所述致动元件具有第一长度,并且其中所述一个或多个电子部件具有大于所述第一长度的第二长度。9. The device of claim 7, wherein the actuation element has a first length, and wherein the one or more electronic components have a second length greater than the first length. 10.根据权利要求1所述的装置,其中所述致动元件具有第一电阻并且所述一个或多个电子部件共同具有第二电阻,并且其中所述第一电阻与所述第二电阻近似相同。10. The device of claim 1, wherein the actuating element has a first resistance and the one or more electronic components collectively have a second resistance, and wherein the first resistance is approximately the same as the second resistance same. 11.根据权利要求1所述的装置,其中所述谐振电路被配置为在所述电流流动穿过所述致动元件时耗散功率。11. The device of claim 1, wherein the resonant circuit is configured to dissipate power when the current flows through the actuation element. 12.根据权利要求1所述的装置,其中所述谐振电路具有小于100的品质因数。12. The device of claim 1, wherein the resonant circuit has a quality factor of less than 100. 13.根据权利要求1所述的装置,其中所述致动元件与所述一个或多个电子部件串联。13. The device of claim 1, wherein the actuation element is in series with the one or more electronic components. 14.根据权利要求1所述的装置,其中所述形状记忆材料包括合金,所述合金包含镍、钛和铜中的一种或多种。14. The device of claim 1, wherein the shape memory material comprises an alloy comprising one or more of nickel, titanium, and copper. 15.根据权利要求1所述的装置,其中,当植入人类患者体内时,所述装置被配置为在第一身体区域和第二身体区域之间分流流体。15. The device of claim 1, wherein the device is configured to divert fluid between a first body region and a second body region when implanted in a human patient. 16.根据权利要求15所述的装置,所述装置还包括:分流元件,所述分流元件具有延伸穿过其的管腔并且被配置为使得当所述分流元件被植入所述患者体内时,所述管腔流体地连接所述第一身体区域和所述第二身体区域,其中所述致动元件被配置为调节所述管腔的几何结构。16. The device of claim 15, further comprising a shunt element having a lumen extending therethrough and configured such that when the shunt element is implanted in the patient , the lumen fluidly connects the first body region and the second body region, wherein the actuation element is configured to adjust a geometry of the lumen. 17.一种与植入式医疗装置一起使用的电路,所述电路包括:17. An electrical circuit for use with an implantable medical device, the electrical circuit comprising: 一个或多个电子部件,所述一个或多个电子部件被配置为在暴露于电磁场时生成电流;和one or more electronic components configured to generate electrical current when exposed to an electromagnetic field; and 形状记忆致动元件,所述形状记忆致动元件与具有所述一个或多个电子部件的电路成一体,a shape memory actuation element integrated with an electrical circuit having said one or more electronic components, 其中所述一个或多个电子部件响应于暴露于所述电磁场而生成的所述电流流动穿过所述形状记忆致动元件并且对所述形状记忆致动元件进行电阻加热。wherein the current generated by the one or more electronic components in response to exposure to the electromagnetic field flows through the shape memory actuation element and resistively heats the shape memory actuation element. 18.根据权利要求17所述的电路,其中所述电路是谐振电路。18. The circuit of claim 17, wherein the circuit is a resonant circuit. 19.根据权利要求17所述的电路,其中所述电路是RLC电路。19. The circuit of claim 17, wherein the circuit is an RLC circuit. 20.根据权利要求17所述的电路,其中所述形状记忆致动元件提供的第一电阻和所述一个或多个电子部件提供的第二电阻之间的比率在约2.0∶1和0.5∶1之间。20. The circuit of claim 17, wherein a ratio between the first resistance provided by the shape memory actuation element and the second resistance provided by the one or more electronic components is between about 2.0:1 and 0.5: between 1. 21.根据权利要求20所述的电路,其中所述形状记忆致动元件具有第一表面面积,并且其中所述一个或多个电子部件具有大于所述第一表面面积的第二表面面积。21. The circuit of claim 20, wherein the shape memory actuation element has a first surface area, and wherein the one or more electronic components have a second surface area greater than the first surface area. 22.根据权利要求21所述的电路,其中,当所述电流流动穿过所述一个或多个电子部件和所述致动元件时,由于所述第二表面面积大于所述第一表面面积,所述致动元件中的第一功率耗散密度大于所述一个或多个电子部件中的第二功率耗散密度。22. The circuit of claim 21 , wherein when the current flows through the one or more electronic components and the actuating element, since the second surface area is greater than the first surface area , a first power dissipation density in the actuation element is greater than a second power dissipation density in the one or more electronic components. 23.根据权利要求21所述的电路,其中所述致动元件具有第一长度,并且其中所述一个或多个电子部件具有大于所述第一长度的第二长度。23. The circuit of claim 21, wherein the actuation element has a first length, and wherein the one or more electronic components have a second length greater than the first length. 24.根据权利要求17所述的电路,其中所述形状记忆致动元件具有第一电阻并且所述一个或多个电子部件共同具有第二电阻,并且其中所述第一电阻与所述第二电阻相同。24. The circuit of claim 17, wherein the shape memory actuation element has a first resistance and the one or more electronic components collectively have a second resistance, and wherein the first resistance is connected to the second resistance. The resistance is the same. 25.根据权利要求17所述的电路,其中所述电路被配置为在所述电流流动穿过所述形状记忆致动元件时耗散功率。25. The circuit of claim 17, wherein the circuit is configured to dissipate power when the current flows through the shape memory actuation element. 26.根据权利要求17所述的电路,其中所述电路具有小于100的品质因数。26. The circuit of claim 17, wherein the circuit has a figure of merit of less than 100. 27.根据权利要求17所述的电路,其中所述形状记忆致动元件与所述一个或多个电子部件串联。27. The circuit of claim 17, wherein the shape memory actuation element is in series with the one or more electronic components. 28.根据权利要求17所述的电路,其中所述形状记忆致动元件具有转变温度,并且其中所述电路被配置为使得当所述一个或多个电子部件暴露于所述电磁场时,所生成的电流将所述形状记忆致动元件的至少一部分电阻加热到其转变温度以上。28. The circuit of claim 17, wherein the shape memory actuation element has a transition temperature, and wherein the circuit is configured such that when the one or more electronic components are exposed to the electromagnetic field, the generated The electrical current heats at least a portion of the resistance of the shape memory actuation element above its transition temperature. 29.一种用于控制植入患者体内的医疗装置的方法,所述方法包括:29. A method for controlling a medical device implanted in a patient, the method comprising: 朝向植入所述患者体内的一个或多个电子部件引导能量,其中所述电子部件形成谐振电路,所述谐振电路包括可操作地联接到植入医疗装置的致动元件;以及directing energy toward one or more electronic components implanted in the patient, wherein the electronic components form a resonant circuit including an actuation element operatively coupled to an implanted medical device; and 响应于所述能量,在所述谐振电路中自动生成电流,其中所述电流流动穿过所述致动元件并且对所述致动元件进行电阻加热。In response to the energy, a current is automatically generated in the resonant circuit, wherein the current flows through the actuation element and resistively heats the actuation element. 30.根据权利要求29所述的方法,其中朝向所述一个或多个电子部件引导所述能量包括:引导来自定位在所述患者外部的能量源的能量。30. The method of claim 29, wherein directing the energy toward the one or more electronic components comprises directing energy from an energy source positioned external to the patient. 31.根据权利要求29所述的方法,其中朝向所述一个或多个电子部件引导所述能量包括:引导来自暂时定位在所述患者体内但与所述一个或多个电子部件间隔开的能量源的能量。31. The method of claim 29, wherein directing the energy toward the one or more electronic components comprises directing energy from a device temporarily positioned within the patient but spaced from the one or more electronic components source of energy. 32.根据权利要求29所述的方法,其中朝向所述一个或多个电子部件引导所述能量包括:在所述一个或多个电子部件周围生成电磁场。32. The method of claim 29, wherein directing the energy toward the one or more electronic components comprises generating an electromagnetic field around the one or more electronic components. 33.根据权利要求29所述的方法,其中朝向所述一个或多个电子部件引导所述能量包括:朝向所述一个或多个电子部件引导RF或微波能量。33. The method of claim 29, wherein directing the energy toward the one or more electronic components comprises directing RF or microwave energy toward the one or more electronic components. 34.根据权利要求29所述的方法,其中所述致动元件由形状记忆材料构成,并且其中对所述致动元件进行电阻加热将所述致动元件加热到转变温度以上,其中所述转变温度是大于体温的温度。34. The method of claim 29, wherein the actuating element is comprised of a shape memory material, and wherein resistively heating the actuating element heats the actuating element above a transition temperature, wherein the transition Temperature is a temperature greater than body temperature. 35.根据权利要求34所述的方法,其中将所述致动元件加热到所述转变温度以上使所述致动元件从其相对于优选几何结构变形的第一配置变换为呈现其优选几何结构的第二配置和/或朝向所述第二配置变换。35. The method of claim 34, wherein heating the actuating element above the transition temperature transforms the actuating element from its first configuration deformed relative to a preferred geometry to assume its preferred geometry the second configuration and/or transition towards said second configuration. 36.根据权利要求35所述的方法,其中将所述致动元件从所述第一配置朝向所述第二配置移动控制所述植入医疗装置的一个或多个操作。36. The method of claim 35, wherein moving the actuation element from the first configuration toward the second configuration controls one or more operations of the implanted medical device. 37.根据权利要求36所述的方法,其中所述植入医疗装置是流体地连接第一身体区域和第二身体区域的分流器,并且其中将所述致动元件从所述第一配置朝向所述第二配置移动调节所述分流器的几何结构。37. The method of claim 36, wherein the implanted medical device is a shunt fluidly connecting a first body region and a second body region, and wherein directing the actuating element from the first configuration toward The second configuration movement adjusts the geometry of the splitter. 38.一种用于部署具有形状记忆致动元件的可调节分流系统的方法,所述方法包括:38. A method for deploying an adjustable shunt system having a shape memory actuation element, the method comprising: 在所述患者体内的目标位置处部署包括所述形状记忆致动元件的所述可调节分流系统,其中所述形状记忆致动元件在所述可调节分流系统的部署之后相对于优选几何结构变形;Deploying the adjustable shunt system including the shape memory actuation element at a target location within the patient, wherein the shape memory actuation element deforms relative to a preferred geometry after deployment of the adjustable shunt system ; 朝向所述分流系统经皮推进能量递送导管,直到所述能量递送导管接近所述可调节分流系统;以及advancing an energy delivery catheter percutaneously toward the shunt until the energy delivery catheter is in proximity to the adjustable shunt; and 发起所述能量递送导管和所述分流系统之间的功率传递以在包括所述形状记忆致动元件的谐振电路中感应电流,initiating power transfer between the energy delivery catheter and the shunt system to induce a current in a resonant circuit including the shape memory actuation element, 其中所述电流对所述形状记忆致动元件进行电阻加热。Wherein the electric current performs resistive heating on the shape memory actuation element. 39.根据权利要求38所述的方法,其中所述能量递送导管是第一导管,并且其中在所述目标位置处部署所述可调节分流系统包括:朝向所述目标位置经皮推进与所述第一导管不同的第二导管,所述第二导管承载所述可调节分流系统。39. The method of claim 38, wherein the energy delivery catheter is a first catheter, and wherein deploying the adjustable shunt system at the target location comprises: advancing percutaneously toward the target location in conjunction with the A second conduit different from the first conduit, the second conduit carrying the adjustable shunt system. 40.根据权利要求38所述的方法,其中经皮推进所述能量递送导管直到所述能量递送导管接近所述可调节分流系统包括:将所述能量递送导管承载的发射器线圈定位在所述可调节分流系统的5cm内。40. The method of claim 38, wherein percutaneously advancing the energy delivery catheter until the energy delivery catheter is in proximity to the adjustable shunt system comprises positioning a transmitter coil carried by the energy delivery catheter on the Adjustable shunt system within 5cm. 41.根据权利要求40所述的方法,其中经皮推进所述能量递送导管直到所述能量递送导管接近所述可调节分流系统包括:将所述发射器线圈定位在所述可调节分流系统的2cm内。41. The method of claim 40, wherein percutaneously advancing the energy delivery catheter until the energy delivery catheter is in proximity to the adjustable shunt system comprises: positioning the transmitter coil on the adjustable shunt system within 2cm. 42.根据权利要求40所述的方法,其中所述发射器线圈不接触所述可调节分流系统。42. The method of claim 40, wherein the transmitter coil does not contact the adjustable shunt system. 43.根据权利要求38所述的方法,其中所述电流将所述形状记忆致动元件电阻加热到转变温度以上,并且致使所述形状记忆致动元件从变形配置朝向其优选几何结构移动。43. The method of claim 38, wherein the current resistively heats the shape memory actuation element above a transition temperature and causes the shape memory actuation element to move from a deformed configuration towards its preferred geometry.
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