CN116525603A - Power packaging module of three-phase full-bridge circuit - Google Patents

Abstract

The invention relates to a power packaging module of a three-phase full-bridge circuit, which comprises a ceramic dielectric substrate, a first lead frame, a second lead frame, an IGBT module and an IC chip, wherein the ceramic dielectric substrate is arranged on the first lead frame; the ceramic dielectric substrate comprises a ceramic insulating layer, a plurality of mounting areas, etching circuit lines and etching connection points, wherein the mounting areas are positioned on the upper surface of the ceramic insulating layer; the first lead frame is positioned on one side edge of the upper surface of the ceramic dielectric substrate, and the second lead frame is positioned on the other side edge; each IGBT module is welded on the installation area, and a plurality of IGBT modules are arranged in a first installation area in the installation area; the IC chip is arranged in an area between the first installation area and the second lead frame, a plurality of etching connection points are arranged between the first installation area and the IC chip, one end of the IGBT module in the first installation area is electrically connected to the etching connection points through binding wires, and the etching connection points are electrically connected to the IC chip through the binding wires, so that one end of the IGBT module in the first installation area is electrically connected with the IC chip.

Description

A power packaging module of a three-phase full-bridge circuit

technical field

The invention relates to the technical field of new power semiconductor devices, in particular to a power packaging module of a three-phase full-bridge circuit.

Background technique

In the field of power electronics, with the continuous improvement of the requirements for high efficiency and energy saving, IGBTs with low driving power and low loss are increasingly becoming the first choice for power semiconductor devices. The full name of IGBT is Insulated Gate Bipolar Transistor, which is a composite fully-controlled-voltage-driven-power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Insulated Gate Field Effect Transistor). It is a non-on or off switch without the function of amplifying the voltage. It can be regarded as a wire when it is turned on, and it can be regarded as an open circuit when it is turned off. Therefore, it combines the advantages of the two devices of BJT and MOSFET.

In high-power applications, single-chip IGBT devices can no longer meet the needs. Therefore, power packaging modules that integrate multiple IGBT chips and combine other necessary components to form various circuits have emerged as the times require. However, compared with single-chip devices, power packaging modules have higher requirements for hardware integration technologies such as drive technology, series-parallel technology, over-voltage stress protection technology, and soft-switching technology.

The three-phase full-bridge circuit is one of the power packaging modules that has strict requirements on packaging technology. As a power package module with six IGBT modules, under the latest market competition requirements, the size has been compressed to the limit, and the size of a single IGBT module cannot be further reduced because it is provided by the upstream chip supplier. To package six IGBT modules and other components in a limited space, and to complete the layout of the wiring, very high requirements are placed on the packaging process.

Contents of the invention

In view of the above-mentioned technical problems of the power packaging module of the three-phase full-bridge circuit in the prior art, the present invention provides a new power packaging module of the three-phase full-bridge circuit, which has the advantages of compact structure and high integration.

Specifically, the present invention provides a power package module of a three-phase full-bridge circuit, including a ceramic dielectric substrate, a first lead frame, a second lead frame, an IGBT module, and an IC chip;

The ceramic dielectric substrate includes a ceramic insulating layer, a plurality of mounting areas located on the upper surface of the ceramic insulating layer, etched circuit lines, etched connection points, and a copper clad layer located on the bottom surface of the ceramic insulating layer;

The first lead frame is located on one side of the upper surface of the ceramic dielectric substrate, and the second lead frame is located on the other side of the upper surface of the ceramic dielectric substrate parallel to the first lead frame On the side; both the first lead frame and the second lead frame have a plurality of inner pins extending toward the middle of the ceramic dielectric substrate;

There are six IGBT modules, and each of the IGBT modules is welded on the installation area, and a plurality of IGBT modules are installed in the first installation area of the installation area;

The IC chip is installed in the area between the first installation area and the second lead frame, a plurality of etching connection points are arranged between the first installation area and the IC chip, and the first installation area One end of the IGBT module in a mounting area is electrically connected to the etching connection point through a bonding wire, and the etching connection point is electrically connected to the IC chip through a bonding wire, thereby connecting the first mounting area One end of the IGBT module is electrically connected to the IC chip; the other end of the IGBT module in the first installation area is connected to the inner part of the first lead frame or the second lead frame through the bonding wire and the etched circuit wire. Pin electrical connection;

One end of the IGBT module on the installation area except the first installation area is connected to one end of the etched circuit line through a bonding wire, and the other end of the etched circuit line is electrically connected to the IC chip through a bonding wire; The other ends of these IGBT modules are electrically connected to inner pins of the first lead frame or the second lead frame through bonding wires and etched circuit wires.

Preferably, each of the IGBT modules includes an IGBT chip and a paired FRD chip, and the electrical connection between the two is realized through a bonding wire.

Preferably, a straight slot for positioning is provided on the installation area corresponding to the position between the IGBT chip and the FRD chip of each IGBT module.

Preferably, the installation area includes a first installation area, a second installation area, a third installation area and a fourth installation area, and three IGBT modules are welded side by side on the first installation area, and the second and third Each of the fourth installation area has an IGBT module.

Preferably, a thermistor is connected between at least two adjacent inner pin ends of the plurality of inner pins of the first or second lead frame, which is used for over-temperature detection and control of the entire packaging module circuit protection.

Preferably, the etched circuit line is a copper wire with a width of 0.2 mm to 1.5 mm, and the etched connection point is a square or circular copper sheet with an equivalent diameter not greater than 0.6 mm.

Preferably, the etched circuit lines and the inner pins of the first lead frame or the second lead frame are fixed by spot welding by applying solder paste.

Preferably, the binding wires are aluminum wires or copper wires.

Preferably, the power package module further includes an epoxy resin layer that encapsulates the ceramic dielectric substrate, the first lead frame, the second lead frame, the IGBT module and the IC chip as a whole.

Preferably, the first mounting area is at the axial front end of the second lead frame, and the mounting area except the first mounting area is located at the axial rear end of the second lead frame, and the IC chip is rectangular , which is arranged obliquely between the first installation area and the second lead frame, the front end is close to the first installation area, and the rear end is close to the second lead frame.

Compared with the prior art, the beneficial effects and advantages of the power packaging module of a three-phase full-bridge circuit provided by the present invention are: the first lead frame, the second Two lead frames, IGBT modules, and IC chips are connected to complete the formation of the circuit topology, and finally realize the drive control and circuit switch protection functions of the three-phase full-bridge circuit of the entire package module. However, the design of etching connection points and binding wires instead of etching circuit lines can effectively reduce wiring and save wiring space, and achieve the same electrical connection effect.

Description of drawings

1 is a schematic diagram of the overall structure of an intelligent power packaging module of a three-phase full-bridge circuit;

Figure 2 is a side view of a ceramic dielectric substrate;

Fig. 3 is a front view of the ceramic dielectric substrate.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all implementations. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

As shown in Figures 1 to 3, the embodiment of the present invention provides a power package module of a three-phase full-bridge circuit, including a ceramic dielectric substrate 1, a first lead frame 20, a second lead frame 2, an IGBT module 3 and IC chip 13.

As shown in Figure 2 and Figure 3, the ceramic dielectric substrate 1 includes a ceramic insulating layer 6, a plurality of mounting areas 4 on the upper surface of the ceramic insulating layer 6, etched circuit lines 5, etched connection points 50, and a ceramic insulating layer located on the upper surface of the ceramic insulating layer 6. 6 The copper clad layer 7 on the bottom surface; the ceramic insulating layer 6 plays the role of insulation and electrical isolation, and the copper clad layer 7 is used for heat conduction and heat dissipation.

The installation area 4, the etched circuit line 5, and the etching connection point 50 are all etched layers formed on the surface of the ceramic insulating layer 6 and left on the surface after being etched, wherein the installation area 4 is used to install the IGBT module thereon. Group 3, etched circuit lines 5 and etched connection points 50 are used for circuit connection.

As shown in Figures 1 and 3, there are four installation areas 4 in this embodiment, namely the first, second, third, and fourth installation areas. The four installation areas 4 are located in the middle of the ceramic insulating layer 6 and are basically arranged in a straight line, and are spaced at least three times the width of the etched circuit line 5 to ensure electrical isolation. Each installation area 4 is equipped with IGBT modules 3, wherein the first installation area 40 has three IGBT modules 3 arranged side by side, except for the other installation areas of the first installation area 40, that is, the second installation area, the third An IGBT module 3 is respectively arranged on the installation area and the fourth installation area. In the present invention, a configuration of three installation areas, four IGBT modules in the first installation area, and one IGBT module in each of the other two installation areas can also be adopted.

Each IGBT module 3 is composed of an IGBT chip 8 and a paired connected FRD chip 9 , which are electrically connected by bonding wires and welded on the mounting area 4 at preset distances. Soldering is coated with solder paste to achieve conduction and fixation.

And as shown in FIG. 3 , the mounting area 4 between the IGBT chip 8 and the FRD chip 9 of each IGBT module 3 is partially provided with a straight slot 12 for welding positioning and heat dissipation. Moreover, such straight slots 12 are also partially opened in the installation area between the three IGBT modules 3 on the first installation area 40 .

The first lead frame 20 and the second lead frame 2 are respectively located on both sides of the upper surface of the ceramic dielectric substrate 1 and are parallel to each other, enclosing a plurality of mounting areas 4 in the middle. Both the first lead frame 20 and the second lead frame 2 have a plurality of inner pins 11 extending toward the middle of the ceramic dielectric substrate 1, that is, where the mounting area 4 is located, for electrical connection with the IGBT module 3 and the IC chip 13 .

Preferably, among the plurality of internal pins 11 of the first lead frame 20 or the second lead frame 2, a thermistor is connected between the ends of at least two adjacent internal pins 11, which is used for the process of the entire package module. temperature detection and control circuit protection.

An IC chip 13 , preferably an HVIC integrated chip, is mounted in the area between the first mounting area 40 and the second lead frame 2 . As shown in FIG. 1 , the first installation area 40 is at the axial front end of the second lead frame 2, close to one end of the ceramic dielectric substrate 1; other installation areas 4 except the first installation area 40, such as the second installation area, The third installation area and the fourth installation area are located at the axial rear end of the second lead frame 2, and the IC chip 13 is a rectangle, which is inclined between the first installation area 40 and the second lead frame 2, and the front end is close to the second lead frame 2. A mounting area 40, the rear end of which is close to the second lead frame 2. Through this inclined setting, there is enough space for design and arrangement of the etched circuit lines 5, and it is avoided to block the lines or make the circuit lines have more turns when placed horizontally or vertically.

Further, a lot of etched circuit lines 5 are arranged on the surface area of the ceramic dielectric substrate 1 except the first and second lead frames 2, the IC chip 13, and the mounting area 4, which are used to communicate with the first and second lead frames 5 according to the needs of the circuit design. The inner pins 11 of the second lead frame are connected either to the IGBT module 3 or to the IC chip 13 .

Different from the existing solution, a plurality of etching connection points 50 are provided between the first installation area 40 and the IC chip 13, and one end of the IGBT module 3 in the first installation area 40 is electrically connected through the bonding wire 10. Connected to the etching connection point 50, the etching connection point 50 is electrically connected to the IC chip 13 through the bonding wire, thereby electrically connecting one end of the IGBT module group 3 in the first installation area 40 to the IC chip 13; these IGBT module groups 3 The other end of the other end is electrically connected to the inner pin 11 of the first lead frame 20 or the second lead frame 2 through the bonding wire 10 and the etching circuit wire 5;

Except for the first installation area 40, one end of the IGBT module 3 on the other installation areas 4 is connected to one end of the etched circuit line 5 through the bonding wire 10, and the other end of the etched circuit line 5 is electrically connected to the IC chip 13 through the bonding wire. Connection; the other ends of these IGBT modules 3 are electrically connected to the inner pins of the first lead frame 20 or the second lead frame 2 through bonding wires and etched circuit lines.

These devices are connected by bonding wires 10, etched circuit lines 5, and etched connection points 50 to complete the formation of the circuit topology, and finally realize the drive control and circuit switch protection functions of the three-phase full-bridge circuit of the entire package module. And adopting the design of etching connection point 50 and bonding wire 10 instead of etching circuit wire 5 can effectively reduce wiring, save wiring space, and achieve the same electrical connection effect.

The binding wire 10 can be aluminum wire or copper wire, the etched circuit wire 5 is a copper wire with a width of 0.2 mm to 1.5 mm, and the etching connection point is an equivalent diameter (d=4S/D, where d is an equivalent diameter, S is the area, D is the perimeter) square or round copper sheet not greater than 0.6mm.

The etched circuit lines 5 and the inner pins 11 of the first lead frame 20 or the second lead frame 2 are fixed by spot welding through solder paste coating, and the entire ceramic dielectric substrate 1 is mechanically supported and fixed after reflow soldering at 260°C .

In addition, after the circuit layout and electrical connection are completed, all the ceramic dielectric substrate 1, the first lead frame 20, the second lead frame 2, the IGBT module 3 and the IC chip 13 need to be potted and wrapped with a layer of epoxy resin. Layer, to completely isolate the external environment, to achieve physical protection and chemical protection of the entire power package module, in order to achieve anti-corrosion and anti-moisture intrusion protection measures.

The intelligent power packaging module of the present invention integrates the drive control of the three-phase full bridge and the HVIC integrated chip, builds and assembles the power drive and intelligent control of the circuit application in the form of module packaging, which can not only simplify the circuit, reduce the volume, but also save the shell, Materials such as insulating materials, interconnecting conductors, and heat sinks, thereby reducing circuit costs.

Intelligent power packaging modules are realized by rationally designing the assembly of IGBT modules and ceramic dielectric substrates, providing high-quality AC or DC power conversion and switching for computers, communications, automation devices, instruments, industrial devices, etc., as well as high efficiency of motion in industrial processes , precision and fast control; at the same time, the three-phase full-bridge package module constructed by the cost-effective power IGBT module is more suitable for the application of automotive electronics and switching power supply.

Apparently, the above-mentioned embodiments of the present invention are only examples for clearly illustrating the use of the present invention, rather than limiting the implementation of the present invention; To make other changes or changes in different forms, it is not necessary and impossible to list all the implementation modes here; any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included in the present invention within the scope of protection of the claims.

Claims (10)

1. A power package module of a three-phase full-bridge circuit, characterized in that it comprises a ceramic dielectric substrate, a first lead frame, a second lead frame, an IGBT module and an IC chip; The ceramic dielectric substrate includes a ceramic insulating layer, a plurality of mounting areas located on the upper surface of the ceramic insulating layer, etched circuit lines, etched connection points, and a copper clad layer located on the bottom surface of the ceramic insulating layer; The first lead frame is located on one side of the upper surface of the ceramic dielectric substrate, and the second lead frame is located on the other side of the upper surface of the ceramic dielectric substrate parallel to the first lead frame On the side; both the first lead frame and the second lead frame have a plurality of inner pins extending toward the middle of the ceramic dielectric substrate; Each of the IGBT modules is welded on the installation area, and the first installation area in the installation area is equipped with a plurality of IGBT modules; The IC chip is installed in the area between the first installation area and the second lead frame, a plurality of etching connection points are arranged between the first installation area and the IC chip, and the first installation area One end of the IGBT module in a mounting area is electrically connected to the etching connection point through a bonding wire, and the etching connection point is electrically connected to the IC chip through a bonding wire, thereby connecting the first mounting area One end of the IGBT module is electrically connected to the IC chip; the other end of the IGBT module in the first installation area is connected to the inner part of the first lead frame or the second lead frame through the bonding wire and the etched circuit wire. Pin electrical connection; One end of the IGBT module on the installation area except the first installation area is connected to one end of the etched circuit line through a bonding wire, and the other end of the etched circuit line is electrically connected to the IC chip through a bonding wire; The other ends of these IGBT modules are electrically connected to inner pins of the first lead frame or the second lead frame through bonding wires and etched circuit wires. 2 . The power package module according to claim 1 , wherein each of the IGBT modules includes an IGBT chip and a paired connected FRD chip, and the electrical connection between the two is realized through a bonding wire. 3 . The power package module according to claim 2 , wherein a straight slot for positioning is provided on the mounting area corresponding to the position between the IGBT chip and the FRD chip of each IGBT module. 4 . 4. The power package module according to claim 1, wherein the installation area includes a first installation area, a second installation area, a third installation area and a fourth installation area, and the first installation area is arranged side by side Three IGBT modules are welded, and each of the second, third and fourth installation areas has an IGBT module. 5. The power package module according to claim 1, characterized in that, among the multiple inner pins of the first or second lead frame, at least two adjacent inner pin ends are connected with a heat sink. The varistor is used for over-temperature detection and control circuit protection of the entire packaged module. 6. The power package module according to claim 1, wherein the etched circuit wire is a copper wire with a width of 0.2mm to 1.5mm, and the etched connection point is a copper wire with an equivalent diameter not greater than 0.6mm Square or round copper sheets. 7 . The power package module according to claim 1 , wherein the etched circuit wires and the inner pins of the first lead frame or the second lead frame are fixed by spot welding by applying solder paste. 8. The power package module according to claim 1, wherein the bonding wire is an aluminum wire or a copper wire. 9. The power package module according to claim 1, characterized in that, the power package module further comprises integral potting of the ceramic dielectric substrate, the first lead frame, the second lead frame, the IGBT module and the IC chip Wrapped epoxy layer. 10. The power package module according to claim 1, wherein the first installation area is at the axial front end of the second lead frame, and the installation areas other than the first installation area are located in the second lead frame. The axial rear end of the lead frame, the IC chip is rectangular, and it is arranged obliquely between the first mounting area and the second lead frame, the front end is close to the first mounting area, and the rear end is close to the second lead frame.