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CN116301152A - A Reference Circuit Structure for Ultra-Low Voltage Output - Google Patents

A Reference Circuit Structure for Ultra-Low Voltage Output Download PDF

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CN116301152A
CN116301152A CN202310146155.5A CN202310146155A CN116301152A CN 116301152 A CN116301152 A CN 116301152A CN 202310146155 A CN202310146155 A CN 202310146155A CN 116301152 A CN116301152 A CN 116301152A
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resistor
circuit
pnp transistor
pnp
tube
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张铎澜
廖雪
武琪
尤路
魏海龙
赵杰
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Xian Microelectronics Technology Institute
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/561Voltage to current converters
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention provides a reference circuit structure for ultralow voltage output, which comprises a starting circuit, wherein the output end of the starting circuit is respectively connected with a PTAT current generating circuit and a reference voltage generating circuit; the output end of the PTAT current generation circuit is connected with a reference voltage generation circuit; the starting circuit is used for establishing a starting working point, and the PTAT current generation circuit comprises a proportional constant current source circuit which is used for generating a current proportional to absolute temperature and mirroring the current to a reference voltage generation circuit; the reference voltage generating circuit is used for outputting a low-voltage reference; the input power supply voltage of the reference circuit structure is lower than 1.65V, the reference voltage can be as low as 500mV, and is far lower than the band gap reference voltage in the prior art, and the reference circuit structure is suitable for low-voltage and low-power consumption LDO systems; the requirement of a low-voltage and low-power consumption linear voltage stabilizer can be met.

Description

一种超低电压输出的基准电路结构A Reference Circuit Structure for Ultra-Low Voltage Output

技术领域technical field

本发明属于电源管理技术领域,具体涉及一种超低电压输出的基准电路结构。The invention belongs to the technical field of power supply management, and in particular relates to a reference circuit structure for ultra-low voltage output.

背景技术Background technique

随着半导体器件尺寸的小型化以及工艺的不断更新,电源类芯片也有了突飞猛进的发展,低压低功耗已经成为当今电路设计的重要标准,越来越多的线性稳压器需要在电源电压为1.65V,甚至更低的电压下工作;现有技术中的带隙基准电路输出电压通常约为1.25V,这就限制了电路工作的最小电源电压,不适用于输入电源电压在1.65V以下工作的低压线性稳压器。With the miniaturization of semiconductor device size and continuous updating of technology, power supply chips have also developed by leaps and bounds. Low voltage and low power consumption have become an important standard for current circuit design. More and more linear regulators need to operate at a power supply voltage of 1.65V, or even lower voltage; the output voltage of the bandgap reference circuit in the prior art is usually about 1.25V, which limits the minimum power supply voltage for the circuit to work, and is not suitable for the operation of the input power supply voltage below 1.65V low voltage linear regulator.

如图1所示为传统的带隙基准电路结构,该电路由放大器A1,电阻R1、R2和R3,NPN晶体管Q1、Q2组成。放大器A1的负向端连接电阻R2和电阻R3的一端,放大器A1的正向端连接电阻R1的一端和NPN管Q1的集电极,放大器A1的输出端为VREF;电阻R1的另一端和电阻R2的另一端连接VIN;电阻R3的另一端连接NPN管Q2的集电极;NPN管Q1的基极和集电极相连,NPN管Q2的基极和集电极相连,NPN管Q1的发射极和NPN管Q2的发射极连接至地电平GND,其存在以下缺点:第一,传统带隙基准工作电压至少在3V以上才能正常工作;第二,输出基准电压为1.25V,不能满足低压输入线性稳压器的需求。As shown in Figure 1, it is a traditional bandgap reference circuit structure, which consists of amplifier A1, resistors R1, R2 and R3, and NPN transistors Q1 and Q2. The negative end of the amplifier A1 is connected to one end of the resistor R2 and the resistor R3, the positive end of the amplifier A1 is connected to one end of the resistor R1 and the collector of the NPN transistor Q1, the output end of the amplifier A1 is VREF; the other end of the resistor R1 is connected to the resistor R2 The other end of the resistor R3 is connected to VIN; the other end of the resistor R3 is connected to the collector of the NPN transistor Q2; the base of the NPN transistor Q1 is connected to the collector, the base of the NPN transistor Q2 is connected to the collector, and the emitter of the NPN transistor Q1 is connected to the NPN transistor The emitter of Q2 is connected to the ground level GND, which has the following disadvantages: first, the traditional bandgap reference operating voltage must be at least 3V to work normally; second, the output reference voltage is 1.25V, which cannot meet the low-voltage input linear regulation device needs.

发明内容Contents of the invention

针对现有技术中存在的问题,本发明提供一种超低电压输出的基准电路结构,解决低压电源供电时,基准模块正常工作,输出零温度系数的基准电压。Aiming at the problems existing in the prior art, the present invention provides a reference circuit structure for ultra-low voltage output, which solves the problem that the reference module works normally and outputs a reference voltage with zero temperature coefficient when the low-voltage power supply is supplied.

本发明是通过以下技术方案来实现:The present invention is achieved through the following technical solutions:

一种超低电压输出的基准电路结构,包括启动电路,所述启动电路输出端分别连接有PTAT电流产生电路和基准电压产生电路;所述PTAT电流产生电路的输出端连接基准电压产生电路;A reference circuit structure for ultra-low voltage output, including a start-up circuit, the output ends of the start-up circuit are respectively connected to a PTAT current generation circuit and a reference voltage generation circuit; the output end of the PTAT current generation circuit is connected to a reference voltage generation circuit;

所述启动电路用于建立起始工作点,所述PTAT电流产生电路包括比例恒流源电路,用于产生一个正比于绝对温度的电流,并将该电流镜像到基准电压产生电路;所述基准电压产生电路用于输出一个低压基准。The starting circuit is used to establish an initial operating point, and the PTAT current generating circuit includes a proportional constant current source circuit for generating a current proportional to the absolute temperature, and mirroring the current to a reference voltage generating circuit; the reference The voltage generation circuit is used to output a low voltage reference.

优选的,所述启动电路包括电源Vin,所述电源Vin连接有并联的电阻R1、电阻R2、电阻R3、电阻R4和电阻R5的一端,电阻R1的另一端连接有PNP管Q1的发射极,电阻R2的另一端连接有PNP管Q2的发射极,电阻R3的另一端连接有PNP管Q4的发射极,电阻R4的另一端连接有PNP管Q4的发射极,电阻R5的另一端连接有PNP管Q5的发射极;Preferably, the start-up circuit includes a power supply Vin, the power supply Vin is connected to one end of a parallel resistor R1, resistor R2, resistor R3, resistor R4 and resistor R5, and the other end of the resistor R1 is connected to the emitter of the PNP transistor Q1, The other end of the resistor R2 is connected to the emitter of the PNP transistor Q2, the other end of the resistor R3 is connected to the emitter of the PNP transistor Q4, the other end of the resistor R4 is connected to the emitter of the PNP transistor Q4, and the other end of the resistor R5 is connected to the PNP transistor The emitter of tube Q5;

所述PNP管Q1、PNP管Q2、PNP管Q3、PNP管Q4和PNP管Q5组成恒流源电路。The PNP transistor Q1, PNP transistor Q2, PNP transistor Q3, PNP transistor Q4 and PNP transistor Q5 form a constant current source circuit.

优选的,所述PNP管Q1的集电极连接有外接信号VBIAS1、PNP管Q1的基极、PNP管Q2的基极、PNP管Q3的基极、PNP管Q4的基极和PNP管Q5的基极。Preferably, the collector of the PNP transistor Q1 is connected to the external signal VBIAS1, the base of the PNP transistor Q1, the base of the PNP transistor Q2, the base of the PNP transistor Q3, the base of the PNP transistor Q4, and the base of the PNP transistor Q5. pole.

优选的,PTAT电流产生电路包括比例恒流源电路、PNP管Q8和PNP管Q10,所述PNP管Q1的集电极连接PNP管Q8的基极,且PNP管Q8输出端连接比例恒流源电路的输出端,并接入NPN管Q10的发射极。Preferably, the PTAT current generation circuit includes a proportional constant current source circuit, a PNP transistor Q8 and a PNP transistor Q10, the collector of the PNP transistor Q1 is connected to the base of the PNP transistor Q8, and the output terminal of the PNP transistor Q8 is connected to the proportional constant current source circuit output terminal, and access to the emitter of the NPN transistor Q10.

优选的,所述NPN管Q10的基极连接信号VBIAS2。Preferably, the base of the NPN transistor Q10 is connected to the signal VBIAS2.

优选的,所述比例恒流源电路包括PNP管Q6、PNP管Q7、电阻R6、电阻R7和电阻R10,PNP管Q2的集电极连接PNP管Q6的集电极和PNP管Q8的集电极,PNP管Q3的集电极连接PNP管Q7的集电极、电阻R7的一端和电阻R6的一端;NPN管Q6的基极连接电阻R6的另一端,所述NPN管Q6的发射极连接电阻R10的一端、NPN管Q10的集电极和NPN管Q8的发射极,所述NPN管Q7的基极连接电阻R7的另一端,NPN管Q7的发射极连接电阻R10的另一端;所述NPN管Q10的基极连接有信号VBIAS2。Preferably, the proportional constant current source circuit includes a PNP transistor Q6, a PNP transistor Q7, a resistor R6, a resistor R7 and a resistor R10, the collector of the PNP transistor Q2 is connected to the collector of the PNP transistor Q6 and the collector of the PNP transistor Q8, and the PNP The collector of the tube Q3 is connected to the collector of the PNP tube Q7, one end of the resistor R7 and one end of the resistor R6; the base of the NPN tube Q6 is connected to the other end of the resistor R6, and the emitter of the NPN tube Q6 is connected to one end of the resistor R10, The collector of the NPN transistor Q10 and the emitter of the NPN transistor Q8, the base of the NPN transistor Q7 is connected to the other end of the resistor R7, and the emitter of the NPN transistor Q7 is connected to the other end of the resistor R10; the base of the NPN transistor Q10 Signal VBIAS2 is connected.

优选的,所述PNP管Q6的集电极和射极还分别连接有电容C1的两端。Preferably, the collector and the emitter of the PNP transistor Q6 are respectively connected to both ends of the capacitor C1.

优选的,所述PNP管Q6和PNP管Q7的Q6:Q7的发射极面积之比为1:n,其中n为正整数。Preferably, the ratio of the emitter areas of Q6:Q7 of the PNP transistor Q6 and the PNP transistor Q7 is 1:n, wherein n is a positive integer.

优选的,基准电压产生电路包括电阻R8、电阻R9和NPN管Q9,所述PNP管Q4的集电极连接电阻R8的一端、NPN管Q9的集电极和基极;所述PNP管Q5的集电极连接电阻R8的另一端、电阻R9的另一端和信号VREF。Preferably, the reference voltage generating circuit includes a resistor R8, a resistor R9 and an NPN transistor Q9, the collector of the PNP transistor Q4 is connected to one end of the resistor R8, the collector and the base of the NPN transistor Q9; the collector of the PNP transistor Q5 Connect the other end of the resistor R8, the other end of the resistor R9, and the signal VREF.

优选的,所述基准电压产生电路的输出电压在数值上为

Figure BDA0004089283350000031
倍的带隙基准。Preferably, the output voltage of the reference voltage generation circuit is numerically
Figure BDA0004089283350000031
times the bandgap reference.

与现有技术相比,本发明具有以下有益的技术效果:Compared with the prior art, the present invention has the following beneficial technical effects:

本发明提供一种超低电压输出的基准电路结构,包括启动电路,所述启动电路输出端分别连接有PTAT电流产生电路和基准电压产生电路;所述PTAT电流产生电路的输出端连接基准电压产生电路;所述启动电路用于建立起始工作点,所述PTAT电流产生电路包括比例恒流源电路,用于产生一个正比于绝对温度的电流,并将该电流镜像到基准电压产生电路;所述基准电压产生电路用于输出一个低压基准;本申请的基准电路结构输入电源电压低于1.65V,基准电压可低至500mV,远远低于现有技术中的带隙基准电压,适用于低压、低功耗的LDO系统;可以满足低压、低功耗的线性稳压器的需求。The invention provides a reference circuit structure for ultra-low voltage output, including a start-up circuit, the output ends of the start-up circuit are respectively connected to a PTAT current generation circuit and a reference voltage generation circuit; the output end of the PTAT current generation circuit is connected to a reference voltage generation circuit circuit; the starting circuit is used to establish an initial operating point, and the PTAT current generating circuit includes a proportional constant current source circuit for generating a current proportional to the absolute temperature, and mirroring the current to the reference voltage generating circuit; The reference voltage generating circuit is used to output a low-voltage reference; the reference circuit structure of the present application has an input power supply voltage lower than 1.65V, and the reference voltage can be as low as 500mV, which is far lower than the bandgap reference voltage in the prior art, and is suitable for low-voltage , LDO system with low power consumption; it can meet the needs of low-voltage, low-power linear regulators.

附图说明Description of drawings

图1为现有技术中带隙基准电路结构图;Fig. 1 is a structural diagram of a bandgap reference circuit in the prior art;

图2是本发明一种超低电压输出的基准电路结构图。Fig. 2 is a structure diagram of a reference circuit for ultra-low voltage output in the present invention.

具体实施方式Detailed ways

下面结合具体的实施例对本发明做进一步的详细说明,所述是对本发明的解释而不是限定。The present invention will be further described in detail below in conjunction with specific embodiments, which are explanations of the present invention rather than limitations.

为了使本技术领域的人员更好地理解本发明方案,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分的实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都应当属于本发明保护的范围。In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

需要说明的是,本发明的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便这里描述的本发明的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein can be practiced in sequences other than those illustrated or described herein. Furthermore, the terms "comprising" and "having", as well as any variations thereof, are intended to cover a non-exclusive inclusion, for example, a process, method, system, product or device comprising a sequence of steps or elements is not necessarily limited to the expressly listed instead, may include other steps or elements not explicitly listed or inherent to the process, method, product or apparatus.

本发明提供一种超低电压输出的基准电路结构,如图2所示,包括启动电路,所述启动电路输出端分别连接有PTAT电流产生电路和基准电压产生电路;所述PTAT电流产生电路的输出端连接基准电压产生电路;The present invention provides a reference circuit structure for ultra-low voltage output, as shown in Figure 2, comprising a start-up circuit, the output ends of the start-up circuit are respectively connected to a PTAT current generation circuit and a reference voltage generation circuit; the PTAT current generation circuit The output terminal is connected to the reference voltage generating circuit;

所述启动电路用于建立起始工作点,所述PTAT电流产生电路包括比例恒流源电路,用于产生一个正比于绝对温度的电流,并将该电流镜像到基准电压产生电路;所述基准电压产生电路用于输出一个低压基准。The starting circuit is used to establish an initial operating point, and the PTAT current generating circuit includes a proportional constant current source circuit for generating a current proportional to the absolute temperature, and mirroring the current to a reference voltage generating circuit; the reference The voltage generation circuit is used to output a low voltage reference.

优选的,所述启动电路包括电源Vin,所述电源Vin连接有并联的电阻R1、电阻R2、电阻R3、电阻R4和电阻R5的一端,电阻R1的另一端连接有PNP管Q1的发射极,电阻R2的另一端连接有PNP管Q2的发射极,电阻R3的另一端连接有PNP管Q4的发射极,电阻R4的另一端连接有PNP管Q4的发射极,电阻R5的另一端连接有PNP管Q5的发射极;所述PNP管Q1、PNP管Q2、PNP管Q3、PNP管Q4和PNP管Q5组成恒流源电路,用于提供稳定的电流以保证其它电路稳定工作。Preferably, the start-up circuit includes a power supply Vin, the power supply Vin is connected to one end of a parallel resistor R1, resistor R2, resistor R3, resistor R4 and resistor R5, and the other end of the resistor R1 is connected to the emitter of the PNP transistor Q1, The other end of the resistor R2 is connected to the emitter of the PNP transistor Q2, the other end of the resistor R3 is connected to the emitter of the PNP transistor Q4, the other end of the resistor R4 is connected to the emitter of the PNP transistor Q4, and the other end of the resistor R5 is connected to the PNP transistor The emitter of the tube Q5; the PNP tube Q1, PNP tube Q2, PNP tube Q3, PNP tube Q4 and PNP tube Q5 form a constant current source circuit, which is used to provide stable current to ensure stable operation of other circuits.

优选的,所述PNP管Q1的集电极连接有外接信号VBIAS1、PNP管Q1的基极、PNP管Q2的基极、PNP管Q3的基极、PNP管Q4的基极和PNP管Q5的基极;所述外接信号VBIAS1为偏置电压。Preferably, the collector of the PNP transistor Q1 is connected to the external signal VBIAS1, the base of the PNP transistor Q1, the base of the PNP transistor Q2, the base of the PNP transistor Q3, the base of the PNP transistor Q4, and the base of the PNP transistor Q5. pole; the external signal VBIAS1 is a bias voltage.

优选的,PTAT电流产生电路包括比例恒流源电路、PNP管Q8和PNP管Q10,所述PNP管Q1的集电极连接PNP管Q8的基极,且PNP管Q8输出端连接比例恒流源电路的输出端,并接入NPN管Q10的发射极。Preferably, the PTAT current generation circuit includes a proportional constant current source circuit, a PNP transistor Q8 and a PNP transistor Q10, the collector of the PNP transistor Q1 is connected to the base of the PNP transistor Q8, and the output terminal of the PNP transistor Q8 is connected to the proportional constant current source circuit output terminal, and access to the emitter of the NPN transistor Q10.

优选的,所述NPN管Q10的基极连接信号VBIAS2,所述外接信号VBIAS2为偏置电压。Preferably, the base of the NPN transistor Q10 is connected to the signal VBIAS2, and the external signal VBIAS2 is a bias voltage.

优选的,所述比例恒流源电路包括PNP管Q6、PNP管Q7、电阻R6、电阻R7和电阻R10,PNP管Q2的集电极连接PNP管Q6的集电极和PNP管Q8的集电极,PNP管Q3的集电极连接PNP管Q7的集电极、电阻R7的一端和电阻R6的一端;NPN管Q6的基极连接电阻R6的另一端,所述NPN管Q6的发射极连接电阻R10的一端、NPN管Q10的集电极和NPN管Q8的发射极,所述NPN管Q7的基极连接电阻R7的另一端,NPN管Q7的发射极连接电阻R10的另一端;所述NPN管Q10的基极连接有信号VBIAS2。Preferably, the proportional constant current source circuit includes a PNP transistor Q6, a PNP transistor Q7, a resistor R6, a resistor R7 and a resistor R10, the collector of the PNP transistor Q2 is connected to the collector of the PNP transistor Q6 and the collector of the PNP transistor Q8, and the PNP The collector of the tube Q3 is connected to the collector of the PNP tube Q7, one end of the resistor R7 and one end of the resistor R6; the base of the NPN tube Q6 is connected to the other end of the resistor R6, and the emitter of the NPN tube Q6 is connected to one end of the resistor R10, The collector of the NPN transistor Q10 and the emitter of the NPN transistor Q8, the base of the NPN transistor Q7 is connected to the other end of the resistor R7, and the emitter of the NPN transistor Q7 is connected to the other end of the resistor R10; the base of the NPN transistor Q10 Signal VBIAS2 is connected.

优选的,所述PNP管Q6的集电极和射极还分别连接有电容C1的两端,具体的,所述电容C1为滤波电容。Preferably, the collector and the emitter of the PNP transistor Q6 are respectively connected to both ends of a capacitor C1, specifically, the capacitor C1 is a filter capacitor.

优选的,所述PNP管Q6和PNP管Q7的Q6:Q7的发射极面积之比为1:n,其中n为正整数。Preferably, the ratio of the emitter areas of Q6:Q7 of the PNP transistor Q6 and the PNP transistor Q7 is 1:n, wherein n is a positive integer.

优选的,基准电压产生电路包括电阻R8、电阻R9和NPN管Q9,所述PNP管Q4的集电极连接电阻R8的一端、NPN管Q9的集电极和基极;所述PNP管Q5的集电极连接电阻R8的另一端、电阻R9的另一端和信号VREF。Preferably, the reference voltage generating circuit includes a resistor R8, a resistor R9 and an NPN transistor Q9, the collector of the PNP transistor Q4 is connected to one end of the resistor R8, the collector and the base of the NPN transistor Q9; the collector of the PNP transistor Q5 Connect the other end of the resistor R8, the other end of the resistor R9, and the signal VREF.

优选的,所述基准电压产生电路的输出电压在数值上为

Figure BDA0004089283350000061
倍的带隙基准。Preferably, the output voltage of the reference voltage generation circuit is numerically
Figure BDA0004089283350000061
times the bandgap reference.

下面结合附图和实例对本发明作进一步详细说明。The present invention will be described in further detail below in conjunction with accompanying drawings and examples.

电路上电后,启动内部恒流源Q1~Q5,建立静态工作点;After the circuit is powered on, start the internal constant current sources Q1~Q5 to establish a static working point;

PTAT电流产生电路的PTAT电流的产生由Q6、Q7构成的比例对管组成,Q6:Q7的发射极面积之比为1:n,其中n为正整数,分析结果如下:The generation of PTAT current in the PTAT current generation circuit is composed of proportional pair tubes composed of Q6 and Q7. The ratio of the emitter area of Q6:Q7 is 1:n, where n is a positive integer. The analysis results are as follows:

VBE6=VBE7+IREFR10 (1);V BE6 = V BE7 + I REF R 10 (1);

可得VBE6-VBE7=IREFR10,则有V BE6 -V BE7 = I REF R 10 can be obtained, then

Figure BDA0004089283350000062
Figure BDA0004089283350000062

由于IC6=IC7,nIS6=IS7,因此得到PTAT电流:Since I C6 =I C7 , nI S6 =I S7 , the PTAT current is obtained:

Figure BDA0004089283350000063
Figure BDA0004089283350000063

由上式得出R10的值决定了PTAT电流大小;From the above formula, the value of R 10 determines the size of the PTAT current;

VREF=VBE9-I1R8=I2R9 (4);V REF =V BE9 -I 1 R 8 =I 2 R 9 (4);

IREF+I1=I2 (5);I REF +I 1 =I 2 (5);

由此可得,

Figure BDA0004089283350000064
Therefore,
Figure BDA0004089283350000064

Figure BDA0004089283350000065
Figure BDA0004089283350000065

可得,Available,

Figure BDA0004089283350000066
Figure BDA0004089283350000066

最终可得finally available

Figure BDA0004089283350000071
Figure BDA0004089283350000071

其中,IC6表示Q6的集电极电流,IC7表示Q7的集电极电流,IS6表示Q6的发射极电流,IS7表示Q7的发射极电流,I1为流过R8上的电流,I2为流过R9上的电流,IREF为PTAT电流,VREF为输出基准电压,VBE6为Q6的基极-发射极电压,VBE7为Q7的基极-发射极电压,VT为热电压,lnn为n的对数。Among them, I C6 represents the collector current of Q6, I C7 represents the collector current of Q7, I S6 represents the emitter current of Q6, I S7 represents the emitter current of Q7, I 1 represents the current flowing through R 8 , I 2 is the current flowing through R9 , I REF is the PTAT current, V REF is the output reference voltage, V BE6 is the base-emitter voltage of Q6, V BE7 is the base-emitter voltage of Q7, V T is Thermal voltage, lnn is the logarithm of n.

本领域技术人员通过调整R8、R9、R10的阻值以及Q7和Q6的发射极面积的比例n,电路就可以实现输出一个近似零温度系数的超低压基准电压,从公式(8)可以看出,该输出电压在数值上为

Figure BDA0004089283350000072
倍的带隙基准,能提供传统带隙基准不能提供的超低基准电压。By adjusting the resistance values of R8, R9, R10 and the ratio n of the emitter areas of Q7 and Q6 by those skilled in the art, the circuit can output an ultra-low voltage reference voltage with an approximate zero temperature coefficient, as can be seen from formula (8) , the output voltage is numerically
Figure BDA0004089283350000072
times the bandgap reference, it can provide an ultra-low reference voltage that cannot be provided by traditional bandgap references.

最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it still The technical solutions described in the foregoing embodiments can be modified, or some or all of the technical features can be equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. The reference circuit structure for ultralow voltage output is characterized by comprising a starting circuit, wherein the output end of the starting circuit is respectively connected with a PTAT current generating circuit and a reference voltage generating circuit; the output end of the PTAT current generation circuit is connected with a reference voltage generation circuit;
the starting circuit is used for establishing a starting working point, and the PTAT current generation circuit comprises a proportional constant current source circuit which is used for generating a current proportional to absolute temperature and mirroring the current to a reference voltage generation circuit; the reference voltage generating circuit is used for outputting a low-voltage reference.
2. The reference circuit structure of the ultra-low voltage output according to claim 1, wherein the starting circuit comprises a power supply Vin, the power supply Vin is connected with one ends of a resistor R1, a resistor R2, a resistor R3, a resistor R4 and a resistor R5 which are connected in parallel, the other end of the resistor R1 is connected with an emitter of a PNP tube Q1, the other end of the resistor R2 is connected with an emitter of the PNP tube Q2, the other end of the resistor R3 is connected with an emitter of the PNP tube Q4, the other end of the resistor R4 is connected with an emitter of the PNP tube Q4, and the other end of the resistor R5 is connected with an emitter of the PNP tube Q5;
the PNP tube Q1, the PNP tube Q2, the PNP tube Q3, the PNP tube Q4 and the PNP tube Q5 form a constant current source circuit.
3. The reference circuit structure of claim 2, wherein the collector of the PNP transistor Q1 is connected to an external signal VBIAS1, a base of the PNP transistor Q2, a base of the PNP transistor Q3, a base of the PNP transistor Q4, and a base of the PNP transistor Q5.
4. The reference circuit structure for ultra-low voltage output according to claim 2, wherein the PTAT current generating circuit comprises a proportional constant current source circuit, a PNP transistor Q8 and a PNP transistor Q10, wherein the collector of the PNP transistor Q1 is connected to the base of the PNP transistor Q8, and the output end of the PNP transistor Q8 is connected to the output end of the proportional constant current source circuit and is connected to the emitter of the NPN transistor Q10.
5. The reference circuit structure for ultra-low voltage output according to claim 4, wherein the base of NPN transistor Q10 is connected to signal VBIAS2.
6. The reference circuit structure for ultra-low voltage output according to claim 4, wherein the proportional constant current source circuit comprises a PNP transistor Q6, a PNP transistor Q7, a resistor R6, a resistor R7 and a resistor R10, wherein a collector of the PNP transistor Q2 is connected to a collector of the PNP transistor Q6 and a collector of the PNP transistor Q8, and a collector of the PNP transistor Q3 is connected to a collector of the PNP transistor Q7, one end of the resistor R7 and one end of the resistor R6; the base of the NPN tube Q6 is connected with the other end of the resistor R6, the emitter of the NPN tube Q6 is connected with one end of the resistor R10, the collector of the NPN tube Q10 and the emitter of the NPN tube Q8, the base of the NPN tube Q7 is connected with the other end of the resistor R7, and the emitter of the NPN tube Q7 is connected with the other end of the resistor R10; the base of NPN pipe Q10 is connected with signal VBIAS2.
7. The reference circuit structure for ultra-low voltage output according to claim 4, wherein the collector and emitter of the PNP transistor Q6 are further connected to two ends of the capacitor C1, respectively.
8. The reference circuit structure for ultra-low voltage output according to claim 4, wherein Q6 of said PNP transistor Q6 and PNP transistor Q7: the ratio of emitter areas of Q7 is 1: n, where n is a positive integer.
9. The reference circuit structure of ultralow voltage output according to claim 2, wherein the reference voltage generating circuit comprises a resistor R8, a resistor R9 and an NPN tube Q9, and the collector of the PNP tube Q4 is connected with one end of the resistor R8, the collector and the base of the NPN tube Q9; the collector of the PNP tube Q5 is connected with the other end of the resistor R8, the other end of the resistor R9 and the signal VREF.
10. The reference circuit structure for ultra-low voltage output according to claim 9, wherein the output voltage of said reference voltage generating circuit is numerically
Figure FDA0004089283340000021
A multiple band gap reference.
CN202310146155.5A 2023-02-21 2023-02-21 A Reference Circuit Structure for Ultra-Low Voltage Output Pending CN116301152A (en)

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CN1206245A (en) * 1997-06-23 1999-01-27 日本电气株式会社 Reference Voltage Generation Circuit
US20050237045A1 (en) * 2004-04-23 2005-10-27 Faraday Technology Corp. Bandgap reference circuits
CN104977973A (en) * 2015-07-08 2015-10-14 北京兆易创新科技股份有限公司 Low pressure and low power-consumption band-gap reference circuit
CN105320202A (en) * 2015-11-03 2016-02-10 无锡麟力科技有限公司 Reference source capable of optionally outputting low voltage
CN207319097U (en) * 2016-06-13 2018-05-04 半导体元件工业有限责任公司 Band-gap reference circuit
CN109917843A (en) * 2019-04-17 2019-06-21 南京芯耐特半导体有限公司 A kind of the constant current generative circuit structure and constant current generation method of automatic biasing
CN112433556A (en) * 2019-08-26 2021-03-02 圣邦微电子(北京)股份有限公司 Improved band-gap reference voltage circuit

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1206245A (en) * 1997-06-23 1999-01-27 日本电气株式会社 Reference Voltage Generation Circuit
US20050237045A1 (en) * 2004-04-23 2005-10-27 Faraday Technology Corp. Bandgap reference circuits
CN104977973A (en) * 2015-07-08 2015-10-14 北京兆易创新科技股份有限公司 Low pressure and low power-consumption band-gap reference circuit
CN105320202A (en) * 2015-11-03 2016-02-10 无锡麟力科技有限公司 Reference source capable of optionally outputting low voltage
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CN112433556A (en) * 2019-08-26 2021-03-02 圣邦微电子(北京)股份有限公司 Improved band-gap reference voltage circuit

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