CN116224190B - Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element - Google Patents

Abstract

The present invention relates to the technical field of magnetic sensors, and provides a magnetic sensor for eliminating manufacturing errors of magnetic flux gathering elements, including: a magnetic flux gathering element that distorts an external magnetic field so that the component of the Z axis is transformed into A component perpendicular to the Z axis; a first magnetic induction pair, the first magnetic induction pair includes a first magnetoresistive element and a second magnetoresistive element, and the first magnetoresistive element and the second magnetoresistive element are in the direction of the Z axis are located below the magnetic flux gathering element, and have the same sensitivity direction; at the positions of the first magnetoresistive element and the second magnetoresistive element, the directions of the magnetic field components perpendicular to the Z axis are the same, and the magnetic field components The rate of change with the position distance is the same but opposite in trend; the first magnetoresistance element and the second magnetoresistance element are connected in series or in parallel. The manufacturing error of the magnetic flux gathering element is eliminated, and the technical problem of inaccurate Z-axis magnetic field measurement caused by the manufacturing error is solved.

Description

A Magnetic Sensor Eliminating Manufacturing Errors of Magnetic Flux Gathering Elements

technical field

The invention relates to the technical field of magnetic sensors, in particular to a magnetic sensor for eliminating manufacturing errors of magnetic flux gathering elements.

Background technique

In the existing magnetic sensor, a magnetic flux gathering element is provided, and the twisting effect of the magnetic flux gathering element on the magnetic field converts the Z-axis magnetic field component perpendicular to the plane of the sheet-shaped magnetic flux gathering element into a magnetic field component in the XY plane, In this way, the measurement of the magnetic signal in the Z-axis direction is realized. Since the magnetic field is greatly distorted at the edge of the magnetic flux gathering element, a magnetoresistive element is generally arranged near the edge of the magnetic flux gathering element, so as to sense the magnetic field component in the XY plane.

However, due to process problems, the growth of the magnetic flux gathering element may not meet expectations. For example, it may change during manufacture, resulting in a change in its edge position. The change in the edge position will cause the X-direction or Y-direction sensed by the magnetoresistive element to change. The magnetic field component becomes larger or smaller, and the magnetic signal size in the Z-axis direction is calculated based on the larger or smaller magnetic field component, and there will inevitably be errors.

Contents of the invention

The purpose of the present invention is to provide a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element, to solve the problem of measuring the magnetic signal perpendicular to the magnetic flux gathering element caused by the manufacturing error of the magnetic flux gathering element in the prior art Inaccurate technical issues.

In the first aspect, the embodiment of the present invention provides a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element, including: the magnetic flux gathering element, the magnetic flux gathering element distorts the external magnetic field, so that the component of the Z axis is transformed is a component perpendicular to the Z axis; the first magnetic induction pair, the first magnetic induction pair includes a first magnetoresistive element and a second magnetoresistive element, and the first magnetoresistive element and the second magnetoresistive element are on the Z axis The directions are all located below the magnetic flux gathering element, and the sensitivity directions are the same; at the positions of the first magnetoresistive element and the second magnetoresistive element, the directions of the magnetic field components perpendicular to the Z axis are the same, and the magnetic field The components have the same magnitude but opposite trends in their rate of change with distance from location.

Further, it also includes a second magnetic induction pair, the second magnetic induction pair includes a third magnetoresistive element and a fourth magnetoresistive element; the third magnetoresistive element and the fourth magnetoresistive element are both Located below the magnetic flux concentrating element; the magnetic field components perpendicular to the Z axis at the positions of the third magnetic resistance element and the fourth magnetic resistance element are in the same direction as the first magnetic resistance element, and the The rate of change of the magnetic field component at the position of the third magneto-resistance element and the fourth magneto-resistance element with the position distance is the same but the trend is opposite; the sensitivity direction of the third magneto-resistance element and the fourth magneto-resistance element are the same , and are opposite to the sensitivity direction of the first magnetoresistive element.

Further, it also includes a second magnetic induction pair, the second magnetic induction pair includes a third magnetoresistive element and a fourth magnetoresistive element; the third magnetoresistive element and the fourth magnetoresistive element are both Located below the magnetic flux gathering element; the magnetic field components perpendicular to the Z axis at the positions of the third magnetic resistance element and the fourth magnetic resistance element are opposite to the direction of the first magnetic resistance element, and the The rate of change of the magnetic field component at the position of the third magneto-resistance element and the fourth magneto-resistance element with the position distance is the same but the trend is opposite; the sensitivity direction of the third magneto-resistance element and the fourth magneto-resistance element are the same , which is the same as the sensitivity direction of the first magnetoresistive element.

Further, the first magneto-resistance element and the second magneto-resistance element are connected in series or in parallel to form a first bridge arm; the third magneto-resistance element and the fourth magneto-resistance element are connected in series or in parallel to form a second bridge arm ; The first bridge arm and the second bridge arm constitute an output signal of a first half-bridge circuit.

Further, it also includes a third magnetic induction pair and a fourth magnetic induction pair, the third magnetic induction pair includes a fifth magnetoresistance element and a sixth magnetoresistance element, and the fourth magnetic induction pair includes a seventh magnetoresistance element and an eighth magnetoresistance element. The resistive element, the sensitivity direction of the fifth magnetoresistance element is the same as that of the sixth magnetoresistance element, and the sensitivity direction of the seventh magnetoresistance element is the same as that of the eighth magnetoresistance element.

Further, the rate of change of the magnetic field component perpendicular to the Z-axis at the location of the fifth magnetoresistance element and the sixth magnetoresistance element is the same in magnitude but opposite in direction, and the seventh magnetoresistance element and the sixth magnetoresistance element are The rate of change of the magnetic field component perpendicular to the Z axis at the position of the eighth magneto-resistance element is the same as the position distance but opposite in direction, wherein the fifth magneto-resistance element and the sixth magneto-resistance element are connected in series or in parallel to form a third bridge arm, The seventh magnetoresistance element and the eighth magnetoresistance element are connected in series or in parallel to form a fourth bridge arm; the third bridge arm and the fourth bridge arm form a second half-bridge circuit, and the first half-bridge circuit and The second half-bridge circuit forms the output signal of the first full-bridge structure.

Further, the first magnetoresistive element and the second magnetoresistive element are one of XMR magnetoresistive sensors including TMR, AMR, GMR, CMR, and SMR, and the material of the magnetic flux gathering element is Soft magnetic material with high magnetic permeability.

In the second aspect, the embodiment of the present invention also provides a magnetic sensor for eliminating the manufacturing error of the magnetic flux gathering element, including: the magnetic flux gathering element, which distorts the external magnetic field so that the component of the Z axis Transformed into a component perpendicular to the Z axis; four magnetoresistive elements, including the ninth magnetoresistive element, the tenth magnetoresistive element, the eleventh magnetoresistive element and the twelfth magnetoresistive element, the four magnetoresistive elements are in All are located below the magnetic flux gathering elements in the Z-axis direction, and have the same sensitivity direction.

Specifically, the direction of the magnetic field component perpendicular to the Z axis where the ninth magnetoresistance element and the tenth magnetoresistance element are located is the first direction, and the eleventh magnetoresistance element and the twelfth magnetoresistance element The direction of the magnetic field component perpendicular to the Z axis at the location of the resistance element is the second direction, and the first direction is opposite to the second direction; The magnetic field components perpendicular to the Z axis of the tenth magnetoresistive element and the twelfth magnetoresistive element have the same magnitude of the magnetic field component perpendicular to the Z axis, and the four magnetoresistive elements are respectively located The rate of change of the magnetic field component perpendicular to the Z axis of the position is the same with the distance of the position.

Further, the ninth magnetoresistance element and the eleventh magnetoresistance element form a third half-bridge circuit, and the tenth magnetoresistance element and the twelfth magnetoresistance element form a fourth half-bridge circuit, so The third and fourth half bridge circuits form a second full bridge structure output signal, the ninth magnetoresistive element and the tenth magnetoresistive element are located at the diagonal position of the full bridge, the eleventh magnetoresistive element and the tenth The two magnetoresistive elements are located at diagonal positions of the full bridge.

Further, the four magnetoresistive elements are one of the XMR magnetoresistive sensors including TMR, AMR, GMR, CMR, and SMR, and the material of the magnetic flux gathering element is a soft magnetic material with high magnetic permeability .

Embodiments of the present invention have at least the following technical effects:

The embodiment of the present invention provides a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element. A magnetic induction pair is provided under the magnetic flux gathering element, and the magnetic induction pair includes two magnetoresistive elements, namely the first magnetoresistive element and the second magnetoresistive element. Two magnetoresistive elements, the two magnetoresistive elements are located below the magnetic flux gathering element in the Z-axis direction, and the sensitivity directions are the same; at the respective positions of the two magnetoresistive elements, the direction of the magnetic field component perpendicular to the Z-axis The same, and the rate of change of the magnetic field component with the position distance is the same but the trend is opposite, then the change of the magnetic field perpendicular to the Z axis caused by the change of the edge position can be offset. The technical effect of eliminating the manufacturing error of the magnetic flux gathering element is achieved, so that the magnetic signal perpendicular to the magnetic flux gathering element can be measured more accurately.

Description of drawings

In order to more clearly illustrate the specific implementation of the present invention or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the specific implementation or description of the prior art. Obviously, the accompanying drawings in the following description The drawings show some implementations of the present invention, and those skilled in the art can obtain other drawings based on these drawings without any creative effort.

1 is a schematic diagram of the positional relationship between the magnetoresistive element and the magnetic flux gathering element on the XZ plane of a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element provided by Embodiment 1 of the present invention;

2 is a schematic diagram of the positional relationship between the magnetoresistive element and the magnetic flux gathering element on the XY plane of a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element provided by Embodiment 1 of the present invention;

Fig. 3 is a schematic diagram of the magnetic field change at the edge of the magnetic flux concentrating element provided by the embodiment of the present invention;

4 is a schematic diagram of the positional relationship between the magnetoresistive element and the magnetic flux gathering element on the XY plane of a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element provided by Embodiment 2 of the present invention;

5 is a schematic diagram of the positional relationship between the magnetoresistive element and the magnetic flux gathering element on the XY plane of a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element provided by Embodiment 3 of the present invention;

6 is a schematic diagram of the positional relationship between the magnetoresistive element and the magnetic flux gathering element on the XY plane of a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element provided by Embodiment 4 of the present invention;

7 is a schematic diagram of the positional relationship between the magnetoresistive element and the magnetic flux gathering element on the XZ plane of a magnetic sensor that eliminates the manufacturing error of the magnetic flux gathering element provided by Embodiment 5 of the present invention;

FIG. 8 is a schematic diagram of a full-bridge connection of magnetoresistive elements of a magnetic sensor for eliminating manufacturing errors of magnetic flux gathering elements provided by Embodiment 5 of the present invention.

Icon: 2-flux gathering element; 101-first magnetoresistance element; 102-second magnetoresistance element; 103-third magnetoresistance element; 104-fourth magnetoresistance element; 105-fifth magnetoresistance element; 106 - the sixth magnetoresistance element; 107 - the seventh magnetoresistance element; 108 - the eighth magnetoresistance element; 109 - the ninth magnetoresistance element; 110 - the tenth magnetoresistance element; 111 - the eleventh magnetoresistance element; 112 - 12th magnetic resistance element; 31-curve; 32-vertical dotted line; 201-first X side; 202-second X side; 211-first Y side; 212-second Y side.

Detailed ways

The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be understood to have meanings consistent with their meaning in the context of the prior art, and unless specifically defined as herein, are not intended to be idealized or overly Formal meaning to explain.

Those skilled in the art will understand that the singular forms "a", "an", "said" and "the" used herein may also include plural forms unless otherwise stated. It should be further understood that the word "comprising" used in the description of the present invention refers to the presence of said features, integers, steps, operations, elements and/or components, but does not exclude the presence or addition of one or more other features, Integers, steps, operations, elements, components, and/or combinations thereof. The expression "and/or" used herein includes all or any elements and all combinations of one or more associated listed items.

Example 1

Please refer to Fig. 1 and Fig. 2, the embodiment of the present invention provides a kind of magnetic sensor that eliminates the manufacturing error of magnetic flux concentrating element, comprises magnetic flux concentrating element 2, and magnetic flux concentrating element 2 is used for converting the magnetic field component of Z axis direction into The magnetic field component perpendicular to the Z axis, that is, the magnetic field component in the X-axis or Y-axis direction. The magnetic flux concentrating element 2 has a first X-side 201 and a second X-side 202 in the X-axis direction, and a first Y-side 211 and a second Y-side 212 in the Y-axis direction. In this embodiment, a group of magneto-resistive pairs are arranged below the first X side surface 201, the magnetic-inductive pair includes a first magneto-resistive element 101 and a second magneto-resistive element 102, and the first magneto-resistive element 101 and the second magneto-resistive element 102 are respectively Located on both sides of the extended surface of the first X-side surface 201 in the Z-axis direction, the projection of the magnetic flux concentrating element 2 on the XY plane does not cover the first magneto-resistive element 101 , but covers the second magneto-resistive element 102 .

Where the first magneto-resistive element 101 and the second magneto-resistive element 102 are located, the directions of the magnetic field components perpendicular to the Z-axis are the same, and the rate of change of the magnetic field components with the position distance is the same in size but opposite in direction. And the sensitivity direction of the first magneto-resistance element 101 is the same as that of the second magneto-resistance element 102 , and the first magneto-resistance element 101 and the second magneto-resistance element 102 are connected in series or in parallel. Specifically, please refer to FIG. 3 . FIG. 3 simulates only the change of the magnetic field at the edge of the magnetic flux gathering element 2 of a certain size. Curve 31 in FIG. 3 is the comsol fitting data, after a vertical magnetic field is applied in the Z direction, the magnetic flux concentrating element generates a magnetic field in the X direction. The first magneto-resistance element 101 and the second magneto-resistance element 102 should be located within a distance capable of sensing the magnetic field component in the X direction, otherwise the sensor will directly fail. In Fig. 3, the vertical dotted line 32 represents the edge of the magnetic flux gathering element, the left side of the vertical dotted line 32 is the underside covered by the magnetic flux gathering element, and the right side is the uncovered outside. Generally speaking, its magnetic field variation trend is about the magnetic flux gathering element The edge is asymmetrical. It can be seen that at K ₁ and K ₂ , the magnetic field is different in size but the slope of the magnetic field change. K ₁ and K ₂ are the same in size but opposite in direction. In the linear sensor, theoretically, the conductance value of the magneto-sensitive resistor has a linear relationship with the magnetic field at the location, but it is found in the actual measurement that the resistance value and the magnetic field at the location are also approximately linear. If there is no compensation mechanism for the magnetoresistor at the bottom of the side of the magnetic flux gathering element, the edge position change of the magnetic flux gathering element due to manufacturing errors will cause a change in the resistance of the magnetoresistor. Calculated based on this magnetoresistance resistance The size of the Z-axis magnetic field will inevitably cause errors.

Because the variation curves of the magnetic field at the edge of the magnetic flux concentrating element are basically similar, so in this embodiment, with the change of the first X side 201, how does the magnetic induction counteract the expansion or contraction of the edge of the magnetic flux concentrating element caused by process errors, resulting in The measurement error is explained. In Fig. 1, the direction indicated by the X-axis arrow is the positive direction of the magnetic field, the sensitivity direction of the first magnetoresistive element 101 and the second magnetoresistive element 102 are the same, the magnetic field direction of the X-axis at the position is the same, and the magnetic field component varies with When the rate of change of the position distance is the same but opposite in direction, if there is no error in the process, that is, the first X side surface 201 does not move, then the conductance G ₁₀₁ =G ₀ -k(-H ₁ ) of the first magnetic resistance element 101, and the second magnetic resistance element 101 The conductance G 102 of the resistance element ₁₀₂ =G ₀ -k(-H ₂ ), wherein G ₀ is the inherent conductance base, and k is the absolute value of the coefficient of the conductance change caused by the change of the external magnetic field; the "+" in front of k in the formula or "-" depends on the sensitivity direction of the magnetoresistive element, here the sensitive direction of the first magnetoresistive element 101 is negative, and "-" is in front of k, the sensitivity direction of the first magnetoresistive element 101 and the second magnetoresistive element 102 The same, so the front of k in G ₁₀₁ and G ₁₀₂ is "-", and the size of the magnetic field in the X direction can be calculated by measuring G ₁₀₁ and G ₁₀₂ , and then the magnetic field in the Z axis direction can be calculated. H ₁ is the first magnetoresistive element 101 The magnitude of the magnetic field at the location, H ₂ is the magnitude of the magnetic field at the location of the second magnetoresistive element 102 .

When there is an error in the process, take the first X side surface 201 shrinking inward, that is, shifting in the positive direction of the X axis as an example, because the X-axis magnetic field component at the position of the first magneto-resistive element 101 and the second magneto-resistive element 102 varies with the position The rate of change of the distance is the same but in the opposite direction. The absolute value of the magnetic field change is recorded as a. At this time, the first magnetoresistive element 101 is far away from the first X-side 201, and its conductance G ₁₀₁ =G ₀ -k(-H ₁ + a), the second magnetoresistive element 102 is close to the first X side 201, its conductance G ₁₀₂ =G ₀ -k(-H ₂ -a), the first magnetoresistive element 101 and the second magnetoresistive element 102 are connected in parallel, the total The conductance G=G ₀ -k(-H ₁ -H ₂ ), can completely eliminate the unknown magnetic field variation caused by the inward contraction of the first X side 201, and calculate the Z-axis according to the total magnetic permeability after parallel connection direction of the magnetic field.

Or, because the inventors found that the relationship between the resistance value and the magnetic field at the location is approximately linear, it is also possible to connect the first magnetoresistive element 101 and the second magnetoresistive element 102 in series to eliminate the problem caused by the first X side 201 The unknown amount of magnetic field change caused by the inward contraction brings subsequent errors.

If, when the first magneto-resistive element 101 and the position of the second magneto-resistive element 102 have the change rate of the magnetic field component with the position distance in the opposite direction but different in size, although the inward contraction of the first X-side surface 201 cannot be completely eliminated. The amount of change of the magnetic field is unknown, but a part of the error caused by the inward contraction of the first X-side surface 201 can also be offset.

It is conceivable that in this embodiment, the contraction of the first X-side 201 is taken as an example for explanation, and when the first X-side 201 expands outward, the magnetic induction also plays a role. Further, it is also easy to think that the magnetic induction pair can also be placed under the second X side 202, the first Y side 211, and the second Y side 212 to solve the problem of the magnetic flux gathering element caused by the manufacturing error of the magnetic flux gathering element in each direction. The effect of edge offset.

Optionally, the first magnetoresistive element 101 and the second magnetoresistive element 102 are one of XMR magnetoresistive sensors including TMR, AMR, GMR, CMR, and SMR.

Optionally, the material of the magnetic flux concentrating element 2 is a soft magnetic material with high magnetic permeability, such as NiFe and the like.

Example 2

Please refer to FIG. 4 , this embodiment is based on Embodiment 1, and the magnetic induction pair is regarded as a bridge arm, that is, the first magneto-resistive element 101 and the second magneto-resistive element 102 are connected in parallel or in series as a bridge arm. In addition to setting the first magnetic induction pair under the first X side 201, the first magnetic induction pair includes the first magnetoresistive element 101 and the second magnetoresistive element 102, and also arranges the second magnetic induction pair under the first X side 201, the second magnetic induction For including the third magnetoresistance element 103 and the fourth magnetoresistance element 104, the sensitivity directions of the third magnetoresistance element 103 and the fourth magnetoresistance element 104 are the same, and the positions of the third magnetoresistance element 103 and the fourth magnetoresistance element 104 are The rate of change of the X-axis magnetic field component with the position distance is the same in size but opposite in direction.

Meanwhile, the sensitivity directions of the first magneto-resistive element 101 and the third magneto-resistive element 103 are opposite, and the first magnetic induction pair and the second magnetic induction pair are regarded as two bridge arms, which are connected in series to form a half-bridge circuit to detect the magnetic field strength.

Because the sensitivity directions of the first magneto-resistive element 101 and the third magneto-resistive element 103 are opposite, the signal output by the half-bridge circuit formed by them can be more sensitive, and each bridge arm has eliminated the magnetic flux gathering element in the first X The influence brought by the manufacturing error of the side surface 201.

Optionally, the first magnetoresistive element 101, the second magnetoresistive element 102, the third magnetoresistive element 103, and the fourth magnetoresistive element 104 are XMR magnetoresistive sensors including TMR, AMR, GMR, CMR, and SMR kind of.

Example 3

Please refer to FIG. 5 , this embodiment is based on Embodiment 1, and the magnetic induction pair is regarded as a bridge arm, that is, the first magneto-resistive element 101 and the second magneto-resistive element 102 are connected in parallel or in series as a bridge arm. In addition to setting the first magnetic induction pair under the first X side 201, the first magnetic induction pair includes the first magnetoresistive element 101 and the second magnetoresistive element 102, and also arranges the second magnetic induction pair under the second X side 202, the second The magnetic induction pair includes a third magnetic resistance element 103 and a fourth magnetic resistance element 104, and the direction of the magnetic field component on the X axis at the position of the first magnetic induction pair and the second magnetic induction pair is opposite; the third magnetic resistance element 103 and the fourth magnetic resistance element The direction of sensitivity of 104 is the same, and the rate of change of the X-axis magnetic field component at the location of the third magnetoresistive element 103 and the fourth magnetoresistive element 104 is the same but opposite in direction.

The first magneto-resistive element 101 and the third magneto-resistive element 103 have the same sensitivity direction, and the first magnetic induction pair and the second magnetic induction pair are regarded as two bridge arms, which are connected in series to form a half-bridge circuit to detect the magnetic field strength. Each bridge arm has eliminated the influence of the manufacturing error of the magnetic flux gathering element, therefore, the half-bridge circuit does not have the influence of the manufacturing error of the first X-side 201 and the second X-side 202 .

Optionally, the first magnetoresistive element 101, the second magnetoresistive element 102, the third magnetoresistive element 103, and the fourth magnetoresistive element 104 are XMR magnetoresistive sensors including TMR, AMR, GMR, CMR, and SMR kind of.

Example 4

Please refer to FIG. 6 , this embodiment is based on Embodiment 3, and the magnetic induction pair is regarded as a bridge arm. Two groups of magnetic induction pairs are arranged below the first X side 201, the first magnetic induction pair and the third magnetic induction pair. The directions of the magnetic field components on the X axis at the positions of the two groups of magnetic induction pairs are the same, and the first magnetic induction pair includes the first magnetoresistive element 101 With the second magnetic resistance element 102, the third magnetic induction pair includes the fifth magnetic resistance element 105 and the sixth magnetic resistance element 106; at the same time, two sets of magnetic induction pairs are also arranged under the second X side 202, that is, the second magnetic induction pair and the fourth magnetic induction pair. Magnetic induction pair, the direction of the magnetic field component on the X-axis at the position of the two groups of magnetic induction pairs is the same, the second magnetic induction pair includes the third magnetoresistive element 103 and the fourth magnetoresistive element 104, and the fourth magnetic induction pair includes the seventh magnetoresistive element 107 and The eighth magneto-resistive element 108 ; the two sets of magnetic induction pairs below the first X side 201 and the two sets of magnetic induction pairs below the second X side 202 have opposite directions of the magnetic field components on the X axis.

Wherein, the sensitivity directions of the first magneto-resistance element 101 and the second magneto-resistance element 102 are the same, the sensitivity directions of the third magneto-resistance element 103 and the fourth magneto-resistance element 104 are the same, and the fifth magneto-resistance element 105 and the sixth magneto-resistance element 106 have the same sensitivity direction, and the seventh magnetoresistive element 107 and the eighth magnetoresistive element 108 have the same sensitivity direction.

The sensitivity directions of the first magneto-resistance element 101 and the third magneto-resistance element 103 are the same, and the sensitivity directions of the fifth magneto-resistance element 105 and the seventh magneto-resistance element 107 are opposite.

The rate of change of the X-axis magnetic field component at the position of the first magnetoresistive element 101 and the second magnetoresistive element 102 is the same as the position distance but in the opposite direction, and the X-axis at the position of the third magnetoresistance element 103 and the fourth magnetoresistive element 104 The rate of change of the magnetic field component with the position distance is the same but opposite in direction. The change rate of the X-axis magnetic field component at the position of the fifth magnetoresistive element 105 and the sixth magnetoresistive element 106 is the same in magnitude but opposite in direction. The rate of change of the X-axis magnetic field component at the position of the element 107 and the position of the eighth magnetoresistive element 108 is the same but opposite in direction.

Taking the first magnetic induction pair, the second magnetic induction pair, the third magnetic induction pair and the fourth magnetic induction pair as four bridge arms, a full bridge circuit can be formed to detect the magnetic field intensity. Each bridge arm has eliminated the influence of the manufacturing error of the magnetic flux gathering element on the first X-side 201 and the second X-side 202 , therefore, the full-bridge circuit does not have the influence of the manufacturing error.

Optionally, the first magnetoresistance element 101, the second magnetoresistance element 102, the third magnetoresistance element 103, the fourth magnetoresistance element 104, the fifth magnetoresistance element 105, the sixth magnetoresistance element 106, the seventh magnetoresistance element The element 107 and the eighth magnetoresistive element 108 are one of XMR magnetoresistive sensors including TMR, AMR, GMR, CMR, and SMR.

Example 5

Please refer to Fig. 7 and Fig. 8, a kind of magnetic sensor that eliminates the manufacturing error of magnetic flux concentrating element, comprises: magnetic flux concentrating element, and magnetic flux concentrating element changes the component of Z axis into the component perpendicular to Z axis, and magnetic flux concentrating element 2 There are a first X-side 201 and a second X-side 202 in the X-axis direction, and a first Y-side 211 and a second Y-side 212 in the Y-axis direction; the magnetic induction pair in this embodiment includes a ninth magneto-resistive element 109. The tenth magnetoresistive element 110, the eleventh magnetoresistive element 111 and the twelfth magnetoresistive element 112, taking the two sides of the magnetic induction pair placed in the X-axis direction as an example, that is, the ninth magnetoresistive element 109 and the twelfth magnetoresistive element 109 Ten magneto-resistive elements 110 are respectively placed on both sides below the first X-side 201, the eleventh magneto-resistive element 111 and the twelfth magneto-resistive element 112 are respectively placed on both sides below the second X-side 202, and the magnetic flux gathering element The projection on the XY plane does not cover the ninth magnetoresistance element 109 and the eleventh magnetoresistance element 111 , but covers the tenth magnetoresistance element 110 and the twelfth magnetoresistance element 112 .

Specifically, the sensitivity direction of the ninth magneto-resistance element 109, the sensitivity direction of the tenth magneto-resistance element 110, the sensitivity direction of the eleventh magneto-resistance element 111 and the sensitivity direction of the twelfth magneto-resistance element 112 are the same, and are all aligned with the X-axis In parallel, the direction of the magnetic field component where the ninth magneto-resistive element 109 and the tenth magneto-resistive element 110 are located is opposite to the direction of the magnetic field component where the eleventh magneto-resistive element 111 and the twelfth magneto-resistive element 112 are located.

The X-axis magnetic field components at the positions of the ninth magneto-resistive element 109 and the eleventh magneto-resistive element 111 have the same magnitude, denoted as H ₃ The size is the same, denoted as H ₄ , and the X-axis magnetic field components at the positions of the ninth magnetoresistive element 109, the tenth magnetoresistive element 110, the eleventh magnetoresistive element 111, and the twelfth magnetoresistive element 112 vary with the position distance The rate is the same.

When the first X-side 201 and the second X-side 202 expand outwards or shrink inward at the same time, the ninth magnetic resistance element 109, the eleventh magnetic resistance element 111, the tenth magnetic resistance element 110 and the twelfth magnetic resistance element The resistance elements 112 are sequentially connected to form a full bridge, and the node between the ninth magneto-resistance element 109 and the eleventh magneto-resistance element 111 and the node between the tenth magneto-resistance element 110 and the twelfth magneto-resistance element 112 output a differential signal . Next, the first X-side 201 and the second X-side 202 expand outward at the same time.

When the first X side 201 and the second X side 202 expand outward at the same time, the ninth magnetic resistance element 109 and the eleventh magnetic resistance element 111 are close to the edge of the magnetic flux gathering element 2, and the ninth magnetic resistance element 109 is located The magnetic field component increases to -(H ₃ +a), and the magnetic field component where the eleventh magnetic resistance element 111 is located increases to H ₃ +a; the tenth magnetic resistance element 110 and the twelfth magnetic resistance element 112 are far away from the magnetic flux Focusing on the edge of the element 2, the magnetic field component where the tenth magneto-resistive element 110 is located decreases to -(H ₄ -a), and the magnetic field component where the twelfth magneto-resistive element 112 is located decreases to H ₄ -a. In this embodiment, the sensitive direction of the ninth magneto-resistive element 109 is taken as the forward direction, "+" is in front of k, and the sensitivity directions of the four magneto-resistive elements are the same, so the sensitivity coefficient k in the conductance formula is "+".

At this time, referring to FIG. 8 , the ninth magnetoresistive element 109 is connected in series with the eleventh magnetoresistive element 111 as a branch, and the tenth magnetoresistive element 110 and the twelfth magnetoresistive element 112 are connected in series as another branch. The two branches form the full bridge.

The unknown magnetic field error a caused by the simultaneous outward expansion of the first X side 201 and the second X side 202 is eliminated in the final output V _out , and the calculation of the magnetic field in the Z-axis direction based on this V _out is not affected by the error.

Optionally, the ninth magnetoresistance element 109, the tenth magnetoresistance element 110, the eleventh magnetoresistance element 111, and the twelfth magnetoresistance element 112 are XMR magnetoresistance sensors including TMR, AMR, GMR, CMR, and SMR one of a kind.

Optionally, the material of the magnetic flux concentrating element 2 is a soft magnetic material with high magnetic permeability, such as NiFe and the like.

In this embodiment, the first X-side 201 and the second X-side 202 expand outward at the same time. On this basis, it is easy to imagine that when the first X-side 201 and the second X-side 202 shrink inward at the same time, This solution is still applicable; or when the first Y side 211 and the second Y side 212 expand outward or shrink inward at the same time, the magnetic induction pair in this embodiment is arranged below the first Y side 211 and the second Y side 212, Error effects on the Y axis can likewise be eliminated.

Those skilled in the art can understand that the various operations, methods, and steps, measures, and solutions in the processes discussed in the present invention can be replaced, changed, combined, or deleted. Further, other steps, measures, and schemes in the various operations, methods, and processes that have been discussed in the present invention may also be replaced, changed, rearranged, decomposed, combined, or deleted. Further, steps, measures, and schemes in the prior art that have operations, methods, and processes disclosed in the present invention can also be alternated, changed, rearranged, decomposed, combined, or deleted.

In describing the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying References to devices or elements must have a particular orientation, be constructed, and operate in a particular orientation and therefore should not be construed as limiting the invention.

The terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be directly connected, or indirectly connected through an intermediary, and it can be the internal communication of two elements. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

In the description of this specification, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (10)

1. A magnetic sensor that eliminates manufacturing errors of a magnetic flux-collecting member, comprising:

a magnetic flux collecting element that distorts the external magnetic field to convert a component of the Z-axis into a component perpendicular to the Z-axis;

a first magnetic induction pair including a first magnetoresistive element and a second magnetoresistive element, both of which are located below the magnetic flux collecting element in a Z-axis direction and have the same sensitivity direction;

the first magnetic resistance element and the second magnetic resistance element are connected in series or in parallel, the directions of magnetic field components perpendicular to the Z axis are the same, and the change rates of the magnetic field components along with the Z axis, which is the same with the position, from the center of the magnetic flux gathering element are opposite in trend.

2. The magnetic sensor for eliminating manufacturing errors of magnetic flux-concentrating elements of claim 1 further comprising a second pair of magnetic inductances including a third magnetoresistive element and a fourth magnetoresistive element;

the third magnetoresistive element and the fourth magnetoresistive element are both located below the magnetic flux concentrating element in the Z-axis direction;

the magnetic field component perpendicular to the Z axis at the positions of the third magnetic resistance element and the fourth magnetic resistance element is the same as the direction at the first magnetic resistance element, and the change rate of the magnitude of the magnetic field component at the positions of the third magnetic resistance element and the fourth magnetic resistance element along with the position from the center of the magnetic flux collecting element is the same but has opposite trend;

the third magneto-resistive element and the fourth magneto-resistive element have the same sensitivity direction and are opposite to the first magneto-resistive element.

3. The magnetic sensor for eliminating manufacturing errors of magnetic flux-concentrating elements of claim 1 further comprising a second pair of magnetic inductances including a third magnetoresistive element and a fourth magnetoresistive element;

the third magnetoresistive element and the fourth magnetoresistive element are both located below the magnetic flux concentrating element in the Z-axis direction;

the direction of the magnetic field component perpendicular to the Z axis at the position of the third magnetic resistance element and the fourth magnetic resistance element is opposite to that of the first magnetic resistance element, and the change rate of the magnitude of the magnetic field component at the position of the third magnetic resistance element and the fourth magnetic resistance element along with the position from the center Z axis of the magnetic flux collecting element is the same but the trend is opposite;

the third magneto-resistive element and the fourth magneto-resistive element have the same sensitivity direction as the first magneto-resistive element.

4. A magnetic sensor for eliminating manufacturing errors of magnetic flux-collecting members according to claim 2 or 3, wherein the first magnetoresistive element and the second magnetoresistive element are connected in series or in parallel to form a first bridge arm; the third magnetic resistance element and the fourth magnetic resistance element are connected in series or in parallel to form a second bridge arm; and the first bridge arm and the second bridge arm form a first half-bridge circuit output signal.

5. The magnetic sensor for eliminating manufacturing errors of magnetic flux-concentrating elements according to claim 4, further comprising a third magnetic induction pair including a fifth magnetoresistive element and a sixth magnetoresistive element, and a fourth magnetic induction pair including a seventh magnetoresistive element and an eighth magnetoresistive element, the fifth magnetoresistive element being in the same sensitivity direction as the sixth magnetoresistive element, the seventh magnetoresistive element being in the same sensitivity direction as the eighth magnetoresistive element.

6. The magnetic sensor for eliminating manufacturing errors of magnetic flux-collecting member according to claim 5, wherein the magnitude of the magnetic field component perpendicular to the Z-axis at the position of the fifth magneto-resistive element and the sixth magneto-resistive element are the same as the magnitude of the change rate of the magnetic field component perpendicular to the Z-axis at the position of the sixth magneto-resistive element from the center of the magnetic flux-collecting member but opposite in direction, the magnitude of the magnetic field component perpendicular to the Z-axis at the position of the seventh magneto-resistive element and the change rate of the magnetic field component perpendicular to the Z-axis at the position of the eighth magneto-resistive element from the center of the magnetic flux-collecting member are the same as the magnitude of the change rate of the magnetic field component perpendicular to the Z-axis from the center of the magnetic flux-collecting member but opposite in direction, wherein the fifth magneto-resistive element and the sixth magneto-resistive element are connected in series or parallel to form a third leg, and the seventh magneto-resistive element and the eighth magneto-resistive element are connected in series or parallel to form a fourth leg; the third bridge arm and the fourth bridge arm form a second half-bridge circuit, and the first half-bridge circuit and the second half-bridge circuit form a first full-bridge structure output signal.

7. The magnetic sensor for eliminating manufacturing errors of magnetic flux-collecting members according to claim 1, wherein the first magneto-resistive element and the second magneto-resistive element are one of XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR, and the material of the magnetic flux-collecting member is a soft magnetic material of high magnetic permeability.

8. A magnetic sensor that eliminates manufacturing errors of a magnetic flux-collecting member, comprising:

a magnetic flux collecting element that distorts the external magnetic field to convert a component of the Z-axis into a component perpendicular to the Z-axis;

four magnetoresistive elements including a ninth magnetoresistive element, a tenth magnetoresistive element, an eleventh magnetoresistive element, and a twelfth magnetoresistive element, the four magnetoresistive elements being located below the magnetic flux collecting element in the Z-axis direction and having the same sensitivity direction;

the direction of the magnetic field component perpendicular to the Z axis, where the ninth magnetic resistance element and the tenth magnetic resistance element are located, is a first direction, the direction of the magnetic field component perpendicular to the Z axis, where the eleventh magnetic resistance element and the twelfth magnetic resistance element are located, is a second direction, and the first direction is opposite to the second direction;

the size of the magnetic field component perpendicular to the Z axis of the position of the ninth magnetic resistance element is the same as that of the magnetic field component perpendicular to the Z axis of the position of the eleventh magnetic resistance element, the size of the magnetic field component perpendicular to the Z axis of the position of the tenth magnetic resistance element is the same as that of the magnetic field component perpendicular to the Z axis of the position of the twelfth magnetic resistance element, and the change rate of the size of the magnetic field component perpendicular to the Z axis of the position of each of the four magnetic resistance elements along with the change rate of the Z axis of the position from the center of the magnetic flux collecting element is the same.

9. The magnetic sensor for eliminating manufacturing errors of magnetic flux-concentrating elements according to claim 8, wherein the ninth magnetoresistive element and the eleventh magnetoresistive element constitute a third half-bridge circuit, the tenth magnetoresistive element and the twelfth magnetoresistive element constitute a fourth half-bridge circuit, the third half-bridge circuit and the fourth half-bridge circuit form a second full-bridge structure output signal, the ninth magnetoresistive element and the tenth magnetoresistive element are located at diagonal positions of the full bridge, and the eleventh magnetoresistive element and the twelfth magnetoresistive element are located at diagonal positions of the full bridge.

10. The magnetic sensor for eliminating manufacturing errors of magnetic flux-collecting members according to claim 8, wherein the four magneto-resistive elements are one of XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR, and the material of the magnetic flux-collecting members is a soft magnetic material of high magnetic permeability.