CN115810646B - Silicon-based wide-spectrum detector array and preparation method thereof - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 82
- 239000010703 silicon Substances 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000001228 spectrum Methods 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 132
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 66
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 65
- 238000010521 absorption reaction Methods 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000003491 array Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 16
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 5
- 229910000676 Si alloy Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
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- 230000000694 effects Effects 0.000 abstract description 4
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- 230000004913 activation Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- -1 gallium ions Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 230000003595 spectral effect Effects 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a silicon-based broad spectrum detector array and a preparation method thereof, and the silicon-based broad spectrum detector array comprises a plurality of detector unit arrays, wherein each detector unit comprises an SOI substrate, a silicon dioxide window layer, a long wave absorption layer, an n electrode and a p electrode, the SOI substrate comprises a bottom Si material layer, a silicon dioxide buried layer and top silicon, and the top silicon comprises an n-type heavily doped region, an n-type middle doped region and an intrinsic region. The invention adopts partial doping and shallow doping on the surface of the light-receiving surface active region and reserves partial intrinsic region, thereby having no dead zone effect of short wave detection in the intrinsic non-injection region, effectively improving the response of the spectrum detector to light signals with shorter wavelength and realizing wide spectrum detection of 300nm-2000 nm.
Description
Technical Field
The invention relates to a detector array and a preparation method thereof, in particular to a silicon-based broad spectrum detector array and a preparation method thereof, belonging to the technical field of photoelectrons.
Background
The wide-spectrum multicolor imaging and detection has wide application prospect in the aspects of high-quality portrait photographing, agriculture, military, environmental monitoring, geological investigation, marine remote sensing, atmospheric remote sensing, biomedicine and the like, and becomes a research hot spot in the field of photoelectrons in recent years. In general, one semiconductor material can only respond to light within a specific wavelength range, and in order to realize broad spectrum detection, different semiconductor materials must be integrated to expand the light response range. Current photodetectors commonly use direct bandgap III-V semiconductor materials, such as InGaAs, inSb, inAs. By heteroepitaxial integration of III-V materials of different band gap widths, high efficiency broad spectrum detection can be achieved. And the array of the wide spectrum detector is integrated with the readout circuit of the silicon microelectronic detector, so that wide spectrum imaging can be realized, and the application range of the wide spectrum detector can be greatly improved. Unfortunately, while direct bandgap III-V materials have good probing efficiency, they are relatively expensive and have poor thermal mechanical properties, and most importantly, are not process compatible with silicon microelectronic chips, which greatly limits applications.
Since the forbidden bandwidth of silicon is 1.12eV, it is not possible to efficiently absorb optical signals with wavelengths longer than 1100 nm. In addition, although silicon can absorb short wavelength optical signals (< 400 nm), its penetration depth in silicon is very limited, and thus, silicon detectors can typically only effectively detect 400nm-1100nm optical signals. The germanium material is the same as the IV group element, has higher response in the near infrared band, and the germanium detector can effectively detect the optical signals of 800nm-1700 nm. By adopting the germanium tin alloy detector, the optical signal of 800nm-2000nm can be effectively detected. And germanium tin alloy can realize epitaxial growth on silicon, can be completely compatible with the existing silicon CMOS process, and can effectively reduce cost. Therefore, through reasonable integration of silicon, germanium and germanium tin alloy, the light detection capability of different wave bands of the material is fully utilized, and the response wavelength of the silicon-based detector can be widened to 400nm-2000nm, so that wide spectrum detection is realized.
Therefore, if the dead zone effect caused by surface doping can be reduced, the corresponding wavelength range of the silicon-based detector can be further widened. However, in the conventional longitudinal PIN structure, the most surface of the active region of the detector is provided with a heavily doped or medium doped layer, and for optical signals (400 nm) with shorter wavelength and even ultraviolet band, the material absorbs photo-generated carriers generated by the optical signals to be accumulated in the surface doped region, so that the photo-generated carriers are difficult to extract, and the spectral response of the detector on short waves is lost.
Disclosure of Invention
The invention aims to solve the technical problem of providing a silicon-based broad spectrum detector array and a preparation method thereof, which are used for improving the response of a spectrum detector to light signals with shorter wavelength and realizing broad spectrum detection of 300nm-2000 nm.
In order to solve the technical problems, the invention adopts the following technical scheme:
A silicon-based broad spectrum detector array is characterized by comprising a plurality of detector unit arrays, wherein each detector unit array comprises an SOI substrate, a silicon dioxide window layer, a long wave absorption layer, an n-electrode and a p-electrode, the SOI substrate comprises a bottom Si material layer, a silicon dioxide buried layer and top silicon, the silicon dioxide buried layer is manufactured on the upper side of the bottom Si material layer, the top silicon is manufactured on the upper side of the silicon dioxide buried layer, the bottom Si material layer partially covers the lower side of the silicon dioxide buried layer, the top silicon comprises an n-type heavily doped region, an n-type middle doped region and an intrinsic region, the n-type heavily doped region completely replaces the top silicon in a depth range, the n-type middle doped region and the intrinsic region are arranged in a hollow region between the n-type heavily doped regions and the intrinsic region is positioned on the upper side of the n-type middle doped region, the silicon dioxide window layer is matched with the n-type heavily doped region in shape and correspondingly manufactured on the upper side of the n-type heavily doped region, the outer edge of the lower wave absorption layer grows in the silicon dioxide window layer and completely covers the upper side of the n-type middle doped region, the n-electrode is manufactured on the n-type middle doped region, and the p-electrode is manufactured on the long wave absorption layer.
Further, the n-type heavily doped region is distributed on the outer side edge of the single detector unit in a rectangular shape, the n-type middle doped region is distributed in the inner hollow region of the n-type heavily doped region in a geometric shape, the lower side of the n-type middle doped region is located on the upper side of the silicon dioxide buried layer, the n-type middle doped region partially replaces top silicon in a depth range, and all the inner hollow region of the n-type heavily doped region except the n-type middle doped region is an intrinsic region.
Further, a p-type doped region is arranged on the top of the long-wave absorption layer, and a p electrode is manufactured on the p-type doped region.
Further, the semiconductor device further comprises an insulating medium layer, wherein the insulating medium layer is arranged on the outer sides of the silicon dioxide window layer and the long wave absorption layer.
Further, the bottom Si material layer and the long wave absorption layer are staggered from each other.
Further, the long wave absorption layer is made of pure germanium, germanium tin alloy or germanium silicon alloy.
The preparation method of the silicon-based broad spectrum detector array is characterized by comprising the following steps of:
s1, respectively manufacturing an n-type heavily doped region and an n-type middle doped region on top silicon, wherein the undoped region is an intrinsic region;
S2, depositing silicon dioxide on the surface of the top silicon to manufacture a silicon dioxide window layer, and opening windows on the silicon dioxide window layer corresponding to the n-type middle doping region and the region above the intrinsic region;
S3, selecting an epitaxial growth long wave absorption layer on the top silicon exposed in the window of the silicon dioxide window layer;
S4, manufacturing a p-type doped region at the top of the long-wave absorption layer;
s5, depositing an insulating medium layer on the long-wave absorption layer and the silicon dioxide window layer;
S6, manufacturing an n electrode shared by all the detector units on the top silicon corresponding to the n-type heavily doped region, wherein the n electrode is electrically connected with the n-type heavily doped region;
S7, manufacturing independent p-electrodes on the p-type doped regions of each detector unit, wherein the p-electrodes are electrically connected with the p-type doped regions;
s8, annealing to form ohmic contact;
S9, thinning the bottom Si material layer, and removing the Si material layer corresponding to the lower part of the long-wave absorption layer to finish preparation.
Further, in the step S1, the thickness of the top silicon layer is greater than 200nm, the thickness of the silicon dioxide buried layer is greater than 300nm, the crystal orientation of the top silicon layer 110 is in the <001> direction, the conductivity type of the top silicon layer is p-type, the resistivity is 10 ohm/cm, the implantation depth of the n-type heavily doped region is 0-340 nm, the doping concentrations are all greater than 1×10 19cm-3, the ion implantation depth of the n-type heavily doped region is 200-340 nm, the doping concentrations are all greater than 1×10 18cm-3, and the condition for high-temperature annealing activation is >800 ℃ per 10min.
Further, in the step S2, silicon dioxide is deposited on the surface of the top silicon layer by using an ion-enhanced chemical vapor deposition system or a thermal oxidation method, and windows are formed on the silicon dioxide on the upper sides of the doped region and the intrinsic region in the n-type by using a photoresist as a mask and an etching mode combining a dry method and a wet method.
Further, in the step S3, an ultra-high vacuum chemical vapor deposition system is used to epitaxially grow a long wave absorption layer in the window of the silicon dioxide window layer.
Further, in the step S8, the annealing temperature is 150 to 750 ℃.
Further, in step S9, a mechanical grinding process is adopted to thin the bottom Si material layer, and then photoresist is adopted as a mask and a dry etching mode is adopted to remove the Si material layer corresponding to the lower portion of the long-wave absorption layer, so as to complete the preparation.
Compared with the prior art, the silicon-based broad spectrum detector array has the advantages that the silicon-based broad spectrum detector array adopts partial doping and shallow doping on the surface of the light-receiving surface active region, and partial intrinsic region is reserved, so that no dead zone effect of short wave detection exists in an intrinsic non-injection region, the response of a spectrum detector to light signals with shorter wavelength can be effectively improved, and the broad spectrum detection of 300nm-2000nm is realized.
Drawings
FIG. 1 is a schematic diagram of a silicon-based broad spectrum detector array of the present invention.
Fig. 2 is a top view of several forms of top-level silicon of the present invention.
Fig. 3 is a flow chart of a method of fabricating a silicon-based broad spectrum detector array in accordance with the present invention.
Detailed Description
In order to explain in detail the technical solutions adopted by the present invention to achieve the predetermined technical purposes, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that technical means or technical features in the embodiments of the present invention may be replaced without inventive effort, and the present invention will be described in detail below with reference to the accompanying drawings in combination with the embodiments.
As shown in fig. 1, a silicon-based broad spectrum detector array of the present invention is composed of a plurality of detector cell arrays, each detector cell comprising an SOI substrate 1, a silicon dioxide window layer 2, a long wave absorption layer 3, an n-electrode 4 and a p-electrode 5, the SOI substrate 1 comprising a bottom Si material layer 11, a silicon dioxide buried layer 12 and a top silicon 13, the silicon dioxide buried layer 12 being formed on the upper side of the bottom Si material layer 11, the top silicon 13 being formed on the upper side of the silicon dioxide buried layer 12. The bottom Si material layer 11 partially covers the lower side surface of the silicon dioxide buried layer 12, the top layer Si 13 includes an n-type heavily doped region 14, an n-type middle doped region 15 and an intrinsic region 16, and the n-type heavily doped region 14 completely replaces the top layer Si 13 in a depth range, and is used for isolating adjacent detectors, preventing photo-generated carriers from transiting between the adjacent detectors to cause crosstalk, and improving imaging definition. The n-type middle doped region 15 and the intrinsic region 16 are disposed in the hollow region between the n-type heavily doped regions 14 and the intrinsic region 16 is located on the upper side of the n-type middle doped region 15, the shape of the silicon dioxide window layer 2 is matched with that of the n-type heavily doped region 14 and correspondingly manufactured on the upper side of the n-type heavily doped region 14, in order to avoid the influence of the silicon dioxide window layer 2 on the n-type middle doped region, the width of the silicon dioxide window layer 2 is smaller than that of the n-type heavily doped region 14 so as to partially cover the n-type heavily doped region 14. The preparation method of the silicon dioxide window layer 2 can be realized by adopting a method of thermally oxidizing the top layer silicon 13, sputtering growth or chemical vapor deposition. The epitaxial window for making the silicon dioxide window layer 2 can be formed by HF etching, dry etching or the like. By adopting HF corrosion, surface roughness and defects introduced by dry etching can be avoided, thereby improving the quality of the subsequent epitaxial growth wave absorption layer 3. The shape of the top silicon 13 exposed in the etched silicon dioxide window layer 2 determines the position and area of the subsequent epitaxial growth wave-absorbing layer 3. The shape of the silica window layer 2 is preferably square or rectangular, so that the detection area duty ratio of the detector array can be effectively improved.
The lower outer edge of the long wave absorption layer 3 grows in the silicon dioxide window layer 2 and completely covers the upper sides of the n-type middle doped region 15 and the intrinsic region 16, the n electrode 4 is manufactured on the n-type middle doped region 15 and forms good ohmic contact with the n-type heavy doped region 15, and the p electrode 5 is manufactured on the top of the long wave absorption layer 3 and forms good ohmic contact with the p-type doped region 6.
The optical signal is incident from the direction of the silicon dioxide buried layer 12, firstly passes through the top silicon 13, the optical signal which cannot be absorbed or cannot be completely absorbed by the top silicon 13 enters the long wave absorption layer 3 to be absorbed, at the moment, the incompletely absorbed optical signal is reflected by the p electrode 5 at the top of the germanium detector, and enters the detector again to be secondarily absorbed, so that the responsivity is improved. Typically silicon detectors can only detect optical signals in the range 400nm to 1100nm efficiently, germanium detectors can detect optical signals in the range 800nm to 1700nm efficiently, and germanium tin detectors can increase the effective detection wavelength to 2000nm and beyond.
As shown in fig. 2, the n-type heavily doped regions 14 are rectangular and distributed on the outer edges of the single detector unit, and the n-type heavily doped regions 14 are rectangular grid-shaped and separated into square cells, and each cell is a detector unit. The n-type intermediate doped region 15 is geometrically distributed within the hollow region inside the n-type heavily doped region 14, and fig. 2 illustrates how the geometry of the n-type intermediate doped region 15 can look. The lower side of the n-type middle doped region 15 is positioned on the upper side of the silicon dioxide buried layer 12, and the n-type middle doped region 15 is used for partially replacing the top silicon 13 in the depth range, so that the depth of the n-type middle doped region is reduced, and the influence on the extraction of photo-generated carriers is reduced. The hollow region inside the n-type heavily doped region 14 is entirely intrinsic region 16 except for the n-type middle doped region 15.
The top of the long wave absorption layer 3 is provided with a p-type doped region 6, and a p-electrode 5 is fabricated on the p-type doped region 6. And the p-type doped region is annealed and activated after boron and gallium ions are implanted in an ion implantation mode, and the doping concentration of the p-type doped region is more than 5 multiplied by 10 18/cm3.
The silicon-based broad spectrum detector array of the invention also comprises an insulating dielectric layer 7, wherein the insulating dielectric layer 7 is arranged on the outer sides of the silicon dioxide window layer 2, the long wave absorption layer 3 and the p-type doped region 6 and is used for realizing the electrical isolation from the external environment. A through hole for the p electrode 5 to pass through is left on the upper side of the p-type doped region 6.
The bottom Si material layer 11 is offset from the long wave absorption layer 3. Since the bottom Si material layer 11 can also absorb a part of the optical signal, removing the bottom Si material layer 11 under the long wave absorption layer 3 of the detector array can eliminate the influence of the silicon substrate on the optical response of the detector. The material of the long wave absorption layer 3 adopts pure germanium, germanium tin alloy or germanium silicon alloy.
The n-type intermediate doped region 15 and the n-type heavily doped region 14 may be formed by ion implantation or impurity diffusion. Preferably, in this embodiment, the n-type heavily doped region 14 and the n-type middle doped region 15 are activated by annealing after phosphorus or arsenic ions are implanted by ion implantation, wherein the doping concentration of the n-type middle doped region is greater than 1×10 17/cm3, and the doping concentration of the n-type heavily doped region is greater than 5×10 18/cm3 due to the requirement of realizing excellent ohmic contact.
As shown in fig. 3, a method for preparing a silicon-based broad spectrum detector array comprises the following steps:
S1, an n-type heavily doped region 14 and an n-type middle doped region 15 are respectively manufactured on top silicon 13 by adopting photoresist as a mask and an ion implantation mode, and the undoped region is an intrinsic region 16. The thickness of the top silicon 13 is greater than 200nm and the thickness of the buried silicon dioxide layer 12 is greater than 300nm. In this embodiment, the thickness of the silicon dioxide buried layer 12 is 2 μm, the thickness of the top silicon 13 is 340nm, the crystal orientation of the top silicon 13 is the <001> direction, the conductivity type is p-type, and the resistivity is 10 ohm/cm. The implantation depth of the n-type heavily doped region 14 is 0-340 nm, the doping concentration is greater than 1X 10 19cm-3, the ion implantation depth of the n-type middle doped region 15 is 200-340 nm, the doping concentration is greater than 1X 10 18cm-3, and the condition of high-temperature annealing activation is >800 ℃ per 10min.
S2, depositing silicon dioxide on the surface of the top silicon 13 by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) system or a thermal oxidation method, and manufacturing a silicon dioxide window layer 2 on part of silicon dioxide on the n-type heavily doped region 14, the n-type middle doped region 15 and the intrinsic region 16 by adopting a etching mode of combining a photoresist as a mask and a dry wet method, wherein the silicon dioxide window layer is used for preparing the long-wave absorption layer 3. In this embodiment, the silicon dioxide thickness is 200nm, and the shape of the detector unit is square, so the shape of the silicon dioxide etching window is square, and accounts for more than 75% of the area of a single detector.
S3, after cleaning, placing the silicon dioxide window layer 2 into an ultrahigh vacuum chemical vapor deposition system (UHV-CVD), epitaxially growing a long-wave absorption layer 3 on top silicon 13 in an epitaxial window of the silicon dioxide window layer, wherein the long-wave absorption layer 3 is made of pure germanium, germanium tin alloy or germanium silicon alloy, and the thickness of the long-wave absorption layer 3 is at least more than 200nm. In this embodiment, the long wave absorption layer 3 is made of pure germanium material. In order to improve the responsivity of the detector at 1100-1700nm, the thickness of the long-wave absorption layer is 800nm, and at 1550nm wavelength, responsivity of more than 0.6A/W can be obtained.
S4, manufacturing a p-type doped region 6 on the top of the long-wave absorption layer 3 by adopting photoresist as a mask and adopting an ion implantation mode. In this embodiment, the implantation ions of the p-type doped region 6 are boron, the implantation depth is 0-100 nm, and the doping concentration is greater than 1×10 19cm-3. The condition for rapid anneal activation is >400 ℃ per 1min.
And S5, depositing an insulating medium layer 7 on the long-wave absorption layer 3 and the silicon dioxide window layer 2 to realize electrical isolation from the external environment. In this example, PECVD is used to deposit silicon dioxide 400nm.
And S6, manufacturing an n electrode 4 shared by all detector units on the top silicon 13 corresponding to the n-type heavily doped region 14, and forming electrical connection with the n-type heavily doped region 14.
S7, manufacturing p electrodes 5 which are independently arranged on the p-type doped regions 6 and electrically connected with the p-type doped regions 6.
S8, annealing to form ohmic contact. The annealing temperature in this embodiment is 150-750 ℃, which enables ohmic contact between the n-electrode 4 and the n-type heavily doped region 14 and between the p-electrode 5 and the p-type doped region 6.
And S9, thinning the bottom Si material layer 11 by adopting a mechanical grinding process, and removing the corresponding bottom Si material layer 11 below the long-wave absorption layer 3 by adopting photoresist as a mask and a dry etching mode to finish the preparation. In this embodiment, the bottom Si material layer 11 is thinned to 150 μm, and then the corresponding bottom Si material layer 11 is completely removed by back side photolithography and dry etching.
The invention provides a silicon-based broad spectrum detector array and a preparation method thereof. Partial doping and shallow doping on the surface of the light-receiving surface active region are adopted, and partial intrinsic regions are reserved. Therefore, in an intrinsic non-injection region, no dead zone effect of short wave detection exists, and the response of the detector to light signals with shorter wavelength can be effectively improved, so that broad spectrum detection of 300nm-2000nm is realized. In addition, the invention uses silicon as a substrate, can utilize the strong electric signal processing capability of silicon in the microelectronic field, provides good integration basis and optimization space for the array of the silicon-based broad spectrum detector in the future, and has wide application prospect in the silicon-based broad spectrum light processing and light imaging field.
The present invention is not limited to the preferred embodiments, and the present invention is described above in any way, but is not limited to the preferred embodiments, and any person skilled in the art will appreciate that the present invention is not limited to the embodiments described above, while the invention has been described with respect to specific examples including presently preferred modes of carrying out the invention, those skilled in the art will appreciate that there are numerous variations and permutations of the above described embodiments that fall within the spirit and scope of the invention as set forth in the appended claims.
Claims (11)
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| CN112687758A (en) * | 2020-12-29 | 2021-04-20 | 电子科技大学 | Photoelectric detector with silicon carbide-silicon heterojunction structure and preparation method thereof |
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| CN112687758A (en) * | 2020-12-29 | 2021-04-20 | 电子科技大学 | Photoelectric detector with silicon carbide-silicon heterojunction structure and preparation method thereof |
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