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CN115694177B - A high energy efficiency charge pump circuit and control method thereof - Google Patents

A high energy efficiency charge pump circuit and control method thereof

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Publication number
CN115694177B
CN115694177B CN202211446600.1A CN202211446600A CN115694177B CN 115694177 B CN115694177 B CN 115694177B CN 202211446600 A CN202211446600 A CN 202211446600A CN 115694177 B CN115694177 B CN 115694177B
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China
Prior art keywords
transistor
charge pump
pump circuit
control signal
capacitor
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CN202211446600.1A
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CN115694177A (en
Inventor
解宁
王欣
陈世军
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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Publication of CN115694177A publication Critical patent/CN115694177A/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention belongs to the technical field of integrated circuits, and particularly relates to an energy-efficient charge pump circuit and a control method thereof. The charge pump circuit with high energy efficiency comprises a first transistor, a first capacitor, a third transistor, a second capacitor, a fourth transistor, a third capacitor, a fourth transistor, a source electrode, a ground potential and a drain electrode, wherein a grid electrode of the first transistor is connected with a second control signal, the source electrode of the second transistor is connected with a power supply potential, a grid electrode of the second transistor is connected with the first control signal, an upper polar plate of the first capacitor is connected with a drain electrode of the first transistor, a source electrode of the second transistor is connected with the ground potential, a grid electrode of the third transistor is connected with the second control signal and serves as an output end, a lower polar plate of the second capacitor is connected with the ground potential, a grid electrode of the fourth transistor is connected with the first control signal, the source electrode of the third transistor is connected with the source electrode of the third transistor, the drain electrode of the fourth transistor, and the lower polar plate of the third capacitor is connected with the ground potential. The overdrive voltages of the second transistor and the third transistor are reduced, so that the energy efficiency of the charge pump circuit is greatly improved.

Description

High-energy-efficiency charge pump circuit and control method thereof
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to a charge pump circuit and a control method thereof.
Background
As is well known, a charge pump circuit is one of core circuit units of a phase locked loop, and has been used in a large amount in the past in applications such as relaxation oscillator and comparator calibration. With the development of portable electronic devices, charge pumps have emerged in analog integrated circuit applications because of their non-inductive, easy integration. Because portable electronic devices are generally powered by batteries, the charge pump is required to have high energy efficiency so as to meet the long-life requirement of daily life. In recent years, a great deal of students at home and abroad have made a great deal of research work towards energy efficient charge pump circuits, aiming at developing the energy efficiency of the charge pump to a new height.
Disclosure of Invention
The invention aims at solving the technical problem that a charge pump circuit with high energy efficiency is lacking in the prior art, and aims to provide the charge pump circuit with high energy efficiency and a control method thereof.
An energy efficient charge pump circuit comprising:
the two input control signals are a first control signal and a second control signal respectively;
A first transistor, the grid is connected with the second control signal, and the source is connected with the power supply potential;
the grid electrode of the second transistor is connected with the first control signal;
The upper polar plate is connected with the drain electrode of the first transistor and the source electrode of the second transistor respectively, and the lower polar plate is connected with the ground potential;
a third transistor, the grid electrode of which is connected with the second control signal;
The upper polar plate is respectively connected with the drain electrode of the second transistor and the drain electrode of the third transistor and is used as the output end of the charge pump circuit, and the lower polar plate is connected with the ground potential;
A grid electrode of the fourth transistor is connected with the first control signal, and a source electrode of the fourth transistor is connected with the ground potential;
and the upper polar plate of the third capacitor is respectively connected with the source electrode of the third transistor and the drain electrode of the fourth transistor, and the lower polar plate of the third capacitor is connected with the ground potential.
Preferably, the first transistor and the second transistor are N-channel insulated gate bipolar transistors.
Preferably, the third transistor and the fourth transistor are P-channel insulated gate bipolar transistors.
An energy efficient control method of a charge pump circuit, comprising:
Controlling the first control signal to be in a high level and the second control signal to be in a low level, so that the charge pump circuit is in a discharge state, and the potential of the output end of the charge pump circuit is continuously reduced until the third transistor is cut off, and the discharge state is ended;
and controlling the first control signal to be low level and the second control signal to be high level, wherein the charge pump circuit is in a charging state, and the potential of an output end of the charge pump circuit is continuously increased until the second transistor is cut off, and the charging state is ended.
The invention has the positive progress effect that the charge pump circuit with high energy efficiency and the control method thereof can realize two working states of charge and discharge. Due to the existence of the first capacitor and the second capacitor, overdrive voltages of the second transistor in a charging state and the third transistor in a discharging state are reduced, and energy efficiency of the charge pump circuit is greatly improved. The invention has wider application prospect in the design of the charge pump circuit with energy efficiency.
Drawings
Fig. 1 is a circuit diagram of the present invention.
Detailed Description
In order that the manner in which the invention is practiced, as well as the features and objects and functions thereof, will be readily understood and appreciated, the invention will be further described in connection with the accompanying drawings.
Referring to fig. 1, an energy-efficient charge pump circuit includes a first control signal a, a second control signal B, a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a first capacitor C1, a second capacitor C2, and a third capacitor C3.
The grid electrode of the first transistor M1 and the grid electrode of the third transistor M3 are connected with the second control signal B, the source electrode of the first transistor M1 is connected with a power supply potential, the drain electrode of the first transistor M1 and the source electrode of the second transistor M2 are connected with the upper polar plate of the first capacitor C1, and the lower polar plate of the first capacitor C1 is connected with a ground potential.
The grid electrode of the second transistor M2 and the grid electrode of the fourth transistor M4 are both connected with the first control signal A, the drain electrode of the second transistor M2 and the drain electrode of the third transistor M3 are both connected with the upper electrode plate of the second capacitor C2 and serve as an output end OUT of the charge pump circuit, and the lower electrode plate of the second capacitor C2 is connected with the ground potential. The source electrode of the third transistor M3 and the drain electrode of the fourth transistor M4 are both connected to the upper plate of the third capacitor C3, and the lower plate of the third capacitor C3 is connected to the ground potential. The source of the fourth transistor M4 is connected to ground potential.
In some embodiments, the first transistor M1 and the second transistor M2 are N-channel insulated gate bipolar transistors.
In some embodiments, the third transistor M3 and the fourth transistor M4 are P-channel insulated gate bipolar transistors.
The charge pump circuit of the present invention has two modes of operation, charging and discharging. When the first control signal A is at a high level and the second control signal B is at a low level, the charge pump circuit is in a discharging state, and when the first control signal A is at a low level and the second control signal B is at a high level, the charge pump circuit is in a charging state.
When the first control signal A is at a high level and the second control signal B is at a low level, the charge pump circuit is in a discharge state. The first transistor M1 is turned on and the second transistor M2 is turned off, and the first capacitor C1 is charged to the power supply potential. The third transistor M3 is turned on and the fourth transistor M4 is turned off, the output OUT of the charge pump circuit is continuously lowered due to the pull-down current, and the upper plate of the third capacitor C3 is continuously raised until the third transistor M3 is turned off. During the discharging process, since the source potential of the third transistor M3 is gradually increased, the overdrive voltage of the third transistor M3 is gradually reduced along with the discharging process, which improves the energy efficiency of the charge pump circuit in the charging state.
When the first control signal A is at a low level and the second control signal B is at a high level, the charge pump circuit is in a charged state. The third transistor M3 is turned off and the fourth transistor M4 is turned on, and the voltage on the third capacitor C3 is reset to near the ground potential. The first transistor M1 is turned off and the second transistor M2 is turned on, the first capacitor C1 starts to charge the second capacitor C2, the upper plate voltage of the first capacitor C1 starts to decrease from the power supply voltage, the output terminal OUT of the charge pump circuit is continuously increased in potential due to the presence of the pull-up current, and the charging state is ended when the upper plate voltage of the first capacitor C1 decreases to the second transistor M2 is turned off. During the charging process, since the source potential of the second transistor M2 is continuously decreased, the overdrive voltage of the second transistor M2 gradually decreases with the discharging process, which improves the energy efficiency of the charge pump circuit in the discharging state.
The invention also provides a control method for controlling the charge pump circuit of the invention, comprising the following steps:
the first control signal A is controlled to be in a high level, the second control signal B is controlled to be in a low level, the charge pump circuit is in a discharging state, the potential of the output end of the charge pump circuit is continuously reduced until the third transistor M3 is turned off, and the discharging state is ended;
And controlling the first control signal A to be low level and the second control signal B to be high level, wherein the charge pump circuit is in a charging state, and the potential of the output end of the charge pump circuit is continuously increased until the second transistor M2 is turned off, and the charging state is ended.
According to the invention, the existence of the first capacitor C1 and the second capacitor C2 is introduced, so that the overdrive voltage of the second transistor M2 in a charging state and the overdrive voltage of the third transistor M3 in a discharging state of the charge pump circuit are reduced, and the energy efficiency of the charge pump circuit is greatly improved.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (4)

1. An energy efficient charge pump circuit comprising:
the two input control signals are a first control signal and a second control signal respectively;
A first transistor, the grid is connected with the second control signal, and the source is connected with the power supply potential;
the grid electrode of the second transistor is connected with the first control signal;
The upper polar plate is connected with the drain electrode of the first transistor and the source electrode of the second transistor respectively, and the lower polar plate is connected with the ground potential;
a third transistor, the grid electrode of which is connected with the second control signal;
The upper polar plate is respectively connected with the drain electrode of the second transistor and the drain electrode of the third transistor and is used as the output end of the charge pump circuit, and the lower polar plate is connected with the ground potential;
A grid electrode of the fourth transistor is connected with the first control signal, and a source electrode of the fourth transistor is connected with the ground potential;
and the upper polar plate of the third capacitor is respectively connected with the source electrode of the third transistor and the drain electrode of the fourth transistor, and the lower polar plate of the third capacitor is connected with the ground potential.
2. The energy efficient charge pump circuit of claim 1, wherein the first transistor and the second transistor are N-channel insulated gate bipolar transistors.
3. The energy efficient charge pump circuit according to claim 1 or 2, wherein the third transistor and the fourth transistor are P-channel insulated gate bipolar transistors.
4. A control method for controlling the energy-efficient charge pump circuit according to any one of claims 1 to 3, characterized by comprising:
Controlling the first control signal to be in a high level and the second control signal to be in a low level, so that the charge pump circuit is in a discharge state, and the potential of the output end of the charge pump circuit is continuously reduced until the third transistor is cut off, and the discharge state is ended;
and controlling the first control signal to be low level and the second control signal to be high level, wherein the charge pump circuit is in a charging state, and the potential of an output end of the charge pump circuit is continuously increased until the second transistor is cut off, and the charging state is ended.
CN202211446600.1A 2022-11-18 2022-11-18 A high energy efficiency charge pump circuit and control method thereof Active CN115694177B (en)

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CN202211446600.1A CN115694177B (en) 2022-11-18 2022-11-18 A high energy efficiency charge pump circuit and control method thereof

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Application Number Priority Date Filing Date Title
CN202211446600.1A CN115694177B (en) 2022-11-18 2022-11-18 A high energy efficiency charge pump circuit and control method thereof

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CN115694177A CN115694177A (en) 2023-02-03
CN115694177B true CN115694177B (en) 2025-07-15

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN218976565U (en) * 2022-11-18 2023-05-05 中国科学院上海技术物理研究所 A High Efficiency Charge Pump Circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0537338A (en) * 1991-08-01 1993-02-12 Toshiba Corp Output circuit
JP3405257B2 (en) * 1999-03-05 2003-05-12 セイコーエプソン株式会社 Charge pump circuit
JP4059077B2 (en) * 2002-12-26 2008-03-12 ソニー株式会社 Charge pump and PLL circuit using the same
US7034588B2 (en) * 2004-08-27 2006-04-25 Pericom Technology Inc. Calibration of up and down charge-pump currents using a sample-and-hold circuit during idle times
US20170141681A1 (en) * 2015-05-06 2017-05-18 Capital Microelectronics Co., Ltd. Charge pump and electronic device comprising charge pump
US10447152B2 (en) * 2016-07-15 2019-10-15 Linear Technology Corporation Driving charge pump circuits
CN109639133B (en) * 2018-12-28 2020-03-13 上海贝岭股份有限公司 Clock level booster circuit
CN112688538B (en) * 2020-12-10 2022-03-22 成都芯源系统有限公司 Quasi-constant on-time control circuit and switch converter and method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN218976565U (en) * 2022-11-18 2023-05-05 中国科学院上海技术物理研究所 A High Efficiency Charge Pump Circuit

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