CN115116861A - Plasma vacuum hot pressing bonding machine for semiconductor wafer surface bonding processing and bonding method - Google Patents
Plasma vacuum hot pressing bonding machine for semiconductor wafer surface bonding processing and bonding method Download PDFInfo
- Publication number
- CN115116861A CN115116861A CN202210709880.4A CN202210709880A CN115116861A CN 115116861 A CN115116861 A CN 115116861A CN 202210709880 A CN202210709880 A CN 202210709880A CN 115116861 A CN115116861 A CN 115116861A
- Authority
- CN
- China
- Prior art keywords
- sample stage
- bonding
- vacuum
- semiconductor wafer
- upper sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83051—Forming additional members, e.g. dam structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/8309—Vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
本发明公开了一种半导体晶片表面键合加工用等离子体真空热压键合机及键合方法，其特征在于，包括机体，设在机体上的真空腔体和用于将真空腔体进行抽真空的抽真空装置，所述真空腔体内设有用于分别放置待键合加工的半导体晶片的上样品台和下样品台，上样品台与下样品台相对设置且能够相对运动以使位于其上的两半导体晶片贴合；所述真空腔体内设有能够水平移动至两半导体晶片之间的阴极放电板；所述上样品台和下样品台上设有加热器，该加热器产生的热量传递给上样品台和下样品台上所定位的半导体晶片。该半导体晶片表面键合加工用等离子体真空热压键合机可避免键合界面的气泡和氧化层的生成，可提高键合质量。
The invention discloses a plasma vacuum hot pressing bonding machine and a bonding method for semiconductor wafer surface bonding processing. A vacuum evacuation device, the vacuum chamber is provided with an upper sample stage and a lower sample stage for placing the semiconductor wafers to be bonded and processed respectively, the upper sample stage and the lower sample stage are arranged opposite to each other and can be moved relatively so as to be located on them The two semiconductor wafers are bonded together; the vacuum chamber is provided with a cathode discharge plate that can move horizontally between the two semiconductor wafers; the upper sample stage and the lower sample stage are provided with heaters, and the heat generated by the heaters is transferred Place the semiconductor wafer on the upper sample stage and the lower sample stage. The plasma vacuum thermocompression bonding machine for bonding the surface of the semiconductor wafer can avoid the formation of air bubbles and oxide layers at the bonding interface, and can improve the bonding quality.
Description
Technical Field
The invention relates to the technical field of chip equipment and semiconductor manufacturing, and provides a plasma vacuum in-situ bonding machine for semiconductor wafer surface bonding processing and a bonding method thereof.
Background
Bonding is an indispensable important link in the semiconductor manufacturing process, wafer bonding has wide application in the fields of integrated circuit manufacturing, micro electro mechanical system packaging, multifunctional chip integration and the like, but due to different requirements of different application fields on material bonding performance, the functions of bonding equipment have larger difference, so that a bonding system needs to be designed more reasonably and strictly according to the material preparation requirements.
Wafer bonding can be directly carried out in air, but by-product precursors such as hydroxyl, water vapor and the like in the air can be adsorbed on the surface of a wafer in an atmospheric environment, so that a large number of bubbles and oxide layers appear on a bonding interface after bonding, the bonding quality of the wafer is greatly influenced, and the wafer bonding is not allowed for a photoelectric device with an interface electric channel.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a plasma vacuum thermocompression bonding machine for semiconductor wafer surface bonding processing and a bonding method thereof, which can avoid the generation of bubbles and oxide layer at the bonding interface and improve the bonding quality.
The invention relates to a plasma vacuum hot-pressing bonding machine for bonding processing of the surface of a semiconductor wafer, which is characterized by comprising a machine body, a vacuum cavity arranged on the machine body and a vacuumizing device for vacuumizing the vacuum cavity, wherein an upper sample table and a lower sample table for respectively placing the semiconductor wafer to be bonded and processed are arranged in the vacuum cavity, and the upper sample table and the lower sample table are oppositely arranged and can move relatively to joint the two semiconductor wafers positioned on the upper sample table and the lower sample table; a cathode discharge plate capable of horizontally moving to a position between the two semiconductor wafers is arranged in the vacuum cavity; heaters are arranged on the upper sample stage and the lower sample stage, and heat generated by the heaters is transferred to the semiconductor wafers positioned on the upper sample stage and the lower sample stage.
Furthermore, the upper sample stage and the lower sample stage are arranged oppositely in the vertical direction, and the upper sample stage is driven to descend by a vertically arranged screw and nut mechanism or an air cylinder driving mechanism, so that the semiconductor wafer on the upper sample stage and the semiconductor wafer on the lower sample stage can be attached.
Further, the polishing surface of the semiconductor wafer on the upper sample stage is downward, and the polishing surface of the semiconductor wafer on the lower sample stage is upward.
Furthermore, the electric wire of the heater is protected by insulating ceramics to avoid short circuit caused by the contact of the electric wire and high temperature.
Furthermore, the right side inside the vacuum cavity is a cathode discharge plate placing area, the cathode discharge plate placing area is externally connected with a radio frequency power supply to electrify the cathode plate, and the cathode discharge plate is driven to move horizontally by a horizontally arranged screw rod nut mechanism or an air cylinder driving mechanism.
Furthermore, the screw rod nut mechanism vertically arranged on the upper sample platform is connected with and controlled by the stepping motor, so that the screw rod can adjust the pressure of the upper sample platform and the lower sample platform in a stepping manner.
Furthermore, silicon wafers, germanium wafers or indium phosphide wafers are adhered to the surfaces of the upper sample stage, the lower sample stage and the cathode discharge plate, and are used for removing the influence of stainless steel of the sample stage and the cathode discharge plate on the surface of the semiconductor wafer during plasma treatment so as to realize high-quality bonding of different semiconductor wafers.
Furthermore, the vacuum chamber is also connected with an air inlet channel for introducing nitrogen and argon.
The bonding method is characterized by comprising the following steps:
s1, opening the vacuum cavity, respectively placing two semiconductor wafers to be bonded on the upper sample stage and the lower sample stage, and aligning and positioning;
s2, opening a vacuumizing device to finish high-vacuum extraction of the vacuum cavity;
s3, when the vacuum degree reaches a target value, argon begins to be input, after the air inlet pressure control is stable, the cathode discharge plate is driven to move to the middle area of the vacuum cavity between the upper sample stage and the lower sample stage, the radio frequency power supply is turned on to carry out plasma processing on the semiconductor wafer on the upper sample stage and the lower sample stage, and after the plasma processing, the radio frequency power supply is turned off to drive the cathode discharge plate to be pulled away from the bonding area;
s4, driving the upper sample stage to descend to enable the upper sample stage to be in bonding contact with the two semiconductor wafers on the lower sample stage and keep bonding pressure of the upper sample stage and the two semiconductor wafers;
s5, heating the two semiconductor wafers under pressure in situ;
and S6, annealing in situ after heating for a certain time, lifting the sample loading table after annealing is finished, removing the pressure applied to the two semiconductor wafers, opening the cavity, taking out the sample, and finishing in situ bonding.
Further, in the step S3, the target value of the vacuum degree is 10-4 Pa, the pressure control value of the vacuum chamber is 2.5 Pa, the pressure value between the two semiconductor wafers is 1000N-3000N), and the temperature of the two semiconductor wafers during in-situ heating is 300-.
The bonding method can bond the semiconductor wafer in a high vacuum environment, prevent an oxide layer from being introduced into a bonding interface, and avoid the problem that the bonding quality is influenced because bubbles are formed due to the adsorption of hydroxyl on the surface of the wafer.
Description of the drawings:
FIG. 1 is a schematic view of a partial three-dimensional structure of a plasma vacuum hot-pressing bonding machine;
FIG. 2 is a schematic view of a partial front cross-sectional structure of a plasma vacuum hot-pressing bonder;
FIG. 3 is a schematic view of the overall three-dimensional structure of the plasma vacuum hot-pressing bonding machine;
FIG. 4 is a flow chart of the bonding method of the present invention.
Detailed Description
The embodiments of the present invention provide a plasma vacuum in-situ bonding machine and a bonding method, and the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments.
The invention relates to a plasma vacuum hot-pressing bonding machine for bonding processing of the surface of a semiconductor wafer, which comprises a machine body 1 and a vacuum cavity 2 arranged on the machine body 1, wherein the vacuum cavity 2 is a vertical cavity which is a full stainless steel copper ring sealing structure, the front surface of the vacuum cavity is a cavity sealing door which is provided with an observation window and provides a high vacuum environment for a bonding process, a circuit of each module is arranged in the machine body 1, and the front side of the machine body 1 is provided with a belt disc pressure gauge 10, a pressure adjusting knob 11 and the like.
The vacuum-pumping device 3 for vacuumizing the vacuum cavity is arranged on the machine body, and the vacuum-pumping device 3 is the existing equipment and comprises a molecular pump, a mechanical pump, a composite vacuum gauge, a gate valve, a butterfly valve, a resistance gauge, an ionization gauge, a film gauge and the like and is used for pumping gas in the vacuum cavity 2 to create a high-vacuum environment.
An upper sample table 4 and a lower sample table 5 which are used for respectively placing the semiconductor wafers to be bonded and processed are arranged in the vacuum cavity, and positioning grooves are formed in the upper sample table 4 and the lower sample table 5 and used for fixing the semiconductor wafers to be bonded and processed.
The upper sample table and the lower sample table are arranged oppositely in the vertical direction, wherein the upper sample table is driven to lift by a vertically arranged screw rod-nut mechanism or an air cylinder driving mechanism 8 and the like, so that a semiconductor wafer positioned on the upper sample table and a semiconductor wafer positioned on the lower sample table can be attached, wherein the polishing surface of the semiconductor wafer positioned on the upper sample table faces downwards, and the polishing surface of the semiconductor wafer positioned on the lower sample table faces upwards; preferably, the screw rod nut mechanism vertically arranged on the upper sample platform can be connected with and controlled by the stepping motor, so that the screw rod can adjust the pressure of the upper sample platform and the lower sample platform in a stepping manner.
A cathode discharge plate 6 capable of horizontally moving to a position between the two semiconductor wafers is arranged in the vacuum cavity, wherein the right side in the vacuum cavity is a cathode discharge plate placing area, the cathode discharge plate 6 is located in the cathode discharge plate placing area in an initial state, when the vacuum cavity works, the cathode discharge plate 6 moves to a position between the two semiconductor wafers, and the cathode discharge plate 6 can be driven to horizontally move by a horizontally arranged screw rod nut mechanism or an air cylinder driving mechanism 9 and the like; the cathode discharge plate placing area is externally connected with a radio frequency power supply, so that the cathode plate can be electrified to generate plasma, the generated plasma can bombard and remove an oxide layer on the bonding surface of the semiconductor wafer, and a dangling bond is introduced to the bonding surface.
When the plasma processing step is finished, the cathode discharge plate is controlled to move rightwards and reset, and the cathode discharge plate is moved to the right side of the cavity, so that in-situ hot-pressing bonding can be carried out in the middle of the cavity.
The heaters 7 are arranged on the upper sample stage and the lower sample stage, heat generated by the heaters is transferred to the positioned semiconductor wafers on the upper sample stage and the lower sample stage, the heaters 7 can be electric heating wires and the like embedded in the upper sample stage and the lower sample stage, and the semiconductor wafers after plasma treatment are subjected to hot-press bonding under high vacuum, so that an oxide layer and bubbles at a bonding interface are effectively prevented from being introduced, and the bonding quality is improved.
The electric wire of the heater is protected by insulating ceramic in order to protect the electric wire, thereby preventing the electric wire from short circuit caused by contact with high temperature.
In order to design reasonably, silicon wafers, germanium wafers or indium phosphide wafers (i.e. semiconductor materials which are the same as the semiconductor wafers to be bonded) are adhered to the surfaces of the upper sample stage, the lower sample stage and the cathode discharge plate and are used for removing the influence of stainless steel of the sample stage and the cathode discharge plate on the surfaces of the semiconductor wafers during plasma treatment so as to realize high-quality bonding of different semiconductor wafers.
Further, the vacuum cavity is also connected with an air inlet channel for introducing nitrogen and argon; the outside of the actual vacuum cavity is provided with a vacuum air exhaust interface, a discharge gas inlet interface (namely an air inlet channel), a common nitrogen air exhaust interface, a resistance gauge interface, an ionization gauge interface and a film gauge interface, wherein the interfaces are used for meeting the requirements of vacuum pumping, nitrogen introduction and the guarantee of stable air pressure.
The bonding method is characterized by comprising the following steps:
s1, opening the vacuum cavity, respectively placing two semiconductor wafers to be bonded on the upper sample stage and the lower sample stage, and aligning and positioning;
s2, opening a vacuumizing device to finish high-vacuum extraction of the vacuum cavity;
s3, when the vacuum degree reaches a target value, argon begins to be input, after the air inlet pressure control is stable, the cathode discharge plate is driven to move to the middle area of the vacuum cavity between the upper sample stage and the lower sample stage, the radio frequency power supply is turned on to carry out plasma processing on the semiconductor wafer on the upper sample stage and the lower sample stage, and after the plasma processing, the radio frequency power supply is turned off to drive the cathode discharge plate to be pulled away from the bonding area;
s4, driving the upper sample stage to descend to enable the upper sample stage to be in bonding contact with the two semiconductor wafers on the lower sample stage and keep bonding pressure of the upper sample stage and the two semiconductor wafers;
s5, heating the two semiconductor wafers under pressure in situ;
and S6, annealing in situ after heating for a certain time, lifting the sample loading table after annealing is finished, removing the pressure applied to the two semiconductor wafers, opening the cavity, taking out the sample, and finishing in situ bonding.
Further, in step S3, the target vacuum degree is 10-4 Pa, the pressure control value of the vacuum chamber is 2.5 Pa (adjustable according to the requirement), the pressure value between the two semiconductor wafers is 1000N (adjustable according to the requirement, the maximum pressure is 3000N), and the temperature of the two semiconductor wafers during in-situ heating is 300 ℃ (adjustable according to the requirement, maximum 600 ℃).
The bonding method can bond the semiconductor wafer in a high vacuum environment, prevent an oxide layer from being introduced into a bonding interface, and avoid the problem that the bonding quality is influenced because bubbles are formed due to the adsorption of hydroxyl on the surface of the wafer.
Claims (10)
1. A plasma vacuum hot-pressing bonding machine for semiconductor wafer surface bonding processing is characterized by comprising a machine body, a vacuum cavity arranged on the machine body and a vacuumizing device used for vacuumizing the vacuum cavity, wherein an upper sample table and a lower sample table used for respectively placing semiconductor wafers to be bonded and processed are arranged in the vacuum cavity, and the upper sample table and the lower sample table are oppositely arranged and can move relatively to enable two semiconductor wafers positioned on the upper sample table to be bonded and processed to be bonded and bonded; a cathode discharge plate capable of horizontally moving between the two semiconductor wafers is arranged in the vacuum cavity; heaters are arranged on the upper sample stage and the lower sample stage, and heat generated by the heaters is transferred to the semiconductor wafers positioned on the upper sample stage and the lower sample stage.
2. The plasma vacuum thermocompression bonding machine for semiconductor wafer surface bonding processing according to claim 1, wherein the upper sample stage and the lower sample stage are disposed opposite to each other in a vertical direction, and wherein the upper sample stage is driven to descend by a vertically disposed screw-nut mechanism or a cylinder driving mechanism so that the semiconductor wafer on the upper sample stage and the semiconductor wafer on the lower sample stage can be bonded to each other.
3. The plasma vacuum thermocompression bonding machine for semiconductor wafer surface bonding processing according to claim 1 or 2, wherein the polishing surface of the semiconductor wafer on the upper sample stage faces downward, and the polishing surface of the semiconductor wafer on the lower sample stage faces upward.
4. A plasma vacuum thermocompression bonding machine for semiconductor wafer surface bonding processing according to claim 1 or 2, wherein the wires of the heater are protected with insulating ceramics to prevent short circuit of the wires in contact with high temperature.
5. The plasma vacuum thermocompression bonding machine for semiconductor wafer surface bonding processing according to claim 1 or 2, wherein the right side inside the vacuum chamber is a cathode discharge plate placement area, the cathode discharge plate placement area is externally connected with a radio frequency power supply to power the cathode plate, and the cathode discharge plate is driven to move horizontally by a horizontally arranged screw-nut mechanism or a cylinder driving mechanism.
6. The plasma vacuum thermocompression bonding machine for semiconductor wafer surface bonding processing as recited in claim 2, wherein the feed screw and nut mechanism vertically disposed on the upper sample stage is connected to and controlled by a stepper motor, so that the feed screw can adjust the pressure of the upper sample stage and the lower sample stage in steps.
7. The plasma vacuum thermocompression bonding machine for semiconductor wafer surface bonding processing according to claim 1 or 2, wherein the upper and lower sample stages, and the cathode discharge plate are pasted with silicon wafer, germanium sheet or indium phosphide sheet on their surfaces for removing the effect of the stainless steel of the sample stage and the cathode discharge plate on the semiconductor wafer surface during plasma processing to realize high quality bonding of different semiconductor wafers.
8. The plasma vacuum thermocompression bonding machine for semiconductor wafer surface bonding processing according to claim 1 or 2, wherein the vacuum chamber is further connected with a gas inlet channel for introducing nitrogen gas for opening the vacuum chamber and argon gas for controlling the pressure of the gas inlet channel.
9. A bonding method using any one of claims 1 to 8, comprising the steps of:
s1, opening the vacuum cavity, respectively placing two semiconductor wafers to be bonded on the upper sample stage and the lower sample stage, and aligning and positioning;
s2, opening a vacuumizing device to finish high-vacuum extraction of the vacuum cavity;
s3, when the vacuum degree reaches a target value, argon begins to be input, after the air inlet pressure control is stable, the cathode discharge plate is driven to move to the middle area of the vacuum cavity between the upper sample stage and the lower sample stage, the radio frequency power supply is turned on to carry out plasma processing on the semiconductor wafer on the upper sample stage and the lower sample stage, and after the plasma processing, the radio frequency power supply is turned off to drive the cathode discharge plate to be pulled away from the bonding area;
s4, driving the upper sample platform to descend to make the upper sample platform contact with the two semiconductor wafers on the lower sample platform in a bonding way and keep the bonding pressure of the upper sample platform and the two semiconductor wafers;
s5, heating the two semiconductor wafers under pressure in situ;
and S6, annealing in situ after heating for a certain time, lifting the sample loading table after annealing is finished, removing the pressure applied to the two semiconductor wafers, opening the cavity, taking out the sample, and finishing in situ bonding.
10. The bonding method according to claim 9, wherein the target vacuum degree in step S3 is 10-4 Pa, the pressure control value of the vacuum chamber is 2.5 Pa, the pressure value between the two semiconductor wafers is 1000N-3000N), and the temperature of the two semiconductor wafers is 300 ℃ -600 ℃ when they are heated in situ.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210709880.4A CN115116861B (en) | 2022-06-22 | 2022-06-22 | Plasma vacuum hot pressing bonding machine for semiconductor wafer surface bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210709880.4A CN115116861B (en) | 2022-06-22 | 2022-06-22 | Plasma vacuum hot pressing bonding machine for semiconductor wafer surface bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115116861A true CN115116861A (en) | 2022-09-27 |
| CN115116861B CN115116861B (en) | 2025-11-14 |
Family
ID=83327767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210709880.4A Active CN115116861B (en) | 2022-06-22 | 2022-06-22 | Plasma vacuum hot pressing bonding machine for semiconductor wafer surface bonding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115116861B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116606160A (en) * | 2023-04-27 | 2023-08-18 | 苏州璋驰光电科技有限公司 | A nano-copper pillar thermocompression bonding process |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030129851A1 (en) * | 2000-03-17 | 2003-07-10 | Takashi Akahori | Plasma deposition method and system |
| US20070122752A1 (en) * | 2005-11-30 | 2007-05-31 | Tokyo Electron Limited | Semiconductor device manufacturing method and substrate processing system |
| JP2011025302A (en) * | 2009-07-29 | 2011-02-10 | Hiroshima Univ | Plasma substrate surface treatment joining method and device therefor |
| US20120080146A1 (en) * | 2010-04-12 | 2012-04-05 | Suss Microtec Lithography, Gmbh | Apparatus for high throughput wafer bonding |
| KR20120097596A (en) * | 2011-02-25 | 2012-09-05 | 광주과학기술원 | Pdms bonding apparatus and the method of pdms bonding using the same |
| CN202434479U (en) * | 2012-01-09 | 2012-09-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | In situ plasma cleaning and wafer bonding equipment |
| CN106409704A (en) * | 2015-07-29 | 2017-02-15 | 上海微电子装备有限公司 | Semi-automatic wafer bonding device |
| WO2021053236A1 (en) * | 2019-09-19 | 2021-03-25 | Top Technology Ltd | A process and apparatus for the preparation of a bonded substrate |
-
2022
- 2022-06-22 CN CN202210709880.4A patent/CN115116861B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030129851A1 (en) * | 2000-03-17 | 2003-07-10 | Takashi Akahori | Plasma deposition method and system |
| US20070122752A1 (en) * | 2005-11-30 | 2007-05-31 | Tokyo Electron Limited | Semiconductor device manufacturing method and substrate processing system |
| CN1976003A (en) * | 2005-11-30 | 2007-06-06 | 东京毅力科创株式会社 | Semiconductor device manufacturing method and substrate processing system |
| JP2011025302A (en) * | 2009-07-29 | 2011-02-10 | Hiroshima Univ | Plasma substrate surface treatment joining method and device therefor |
| US20120080146A1 (en) * | 2010-04-12 | 2012-04-05 | Suss Microtec Lithography, Gmbh | Apparatus for high throughput wafer bonding |
| KR20120097596A (en) * | 2011-02-25 | 2012-09-05 | 광주과학기술원 | Pdms bonding apparatus and the method of pdms bonding using the same |
| CN202434479U (en) * | 2012-01-09 | 2012-09-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | In situ plasma cleaning and wafer bonding equipment |
| CN106409704A (en) * | 2015-07-29 | 2017-02-15 | 上海微电子装备有限公司 | Semi-automatic wafer bonding device |
| WO2021053236A1 (en) * | 2019-09-19 | 2021-03-25 | Top Technology Ltd | A process and apparatus for the preparation of a bonded substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116606160A (en) * | 2023-04-27 | 2023-08-18 | 苏州璋驰光电科技有限公司 | A nano-copper pillar thermocompression bonding process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115116861B (en) | 2025-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6952799B2 (en) | High pressure treatment of silicon nitride film | |
| CN102934198B (en) | Cold joining device and normal temperature joint method | |
| JP5781412B2 (en) | Lamination method | |
| KR20190093708A (en) | Method and device for bonding substrates | |
| CN106340485A (en) | Wafer bonding clamping device, aligning machine, bonding machine and warping substrate adsorption method | |
| KR102114500B1 (en) | Heat transfer sheet attachment method | |
| KR101241570B1 (en) | Substrate processing method and substrate processing apparatus | |
| US10239211B2 (en) | Carrying method and bonding apparatus | |
| CN113380639A (en) | Atomic-level ion cleaning activation low-temperature bonding device and method | |
| CN115116861A (en) | Plasma vacuum hot pressing bonding machine for semiconductor wafer surface bonding processing and bonding method | |
| TWI786302B (en) | Heating apparatus and heating method | |
| JP6429187B2 (en) | Joining method and joining apparatus | |
| JP4695014B2 (en) | JOINING METHOD, DEVICE PRODUCED BY THIS METHOD, AND JOINING DEVICE | |
| JP4180637B2 (en) | Semiconductor manufacturing apparatus and semiconductor device manufacturing method | |
| EP1624477B1 (en) | Adhesive injection apparatus and method | |
| JP5658083B2 (en) | Temperature change system | |
| JP2007281166A (en) | Bonding method, bonding apparatus and bonding substrate | |
| US11664228B2 (en) | Vacuumizing device and vacuumizing method for bonding substrate | |
| TWI832223B (en) | Semiconductor device manufacturing method and room temperature bonding device | |
| CN114999948A (en) | A high vacuum magnetron sputtering thermocompression bonding machine and bonding method | |
| US11767705B2 (en) | Glass panel unit manufacturing method | |
| CN100485874C (en) | Processing equipment for object to be processed | |
| JP2006073780A (en) | Normal-temperature joint method, equipment, and device | |
| TWI857440B (en) | Pressure Control Valve | |
| CN116313839A (en) | High-vacuum radio-frequency plasma radical thermocompression bonding machine and bonding method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |