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CN114899169A - Multi-chip flat-laying packaging structure - Google Patents

Multi-chip flat-laying packaging structure Download PDF

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Publication number
CN114899169A
CN114899169A CN202210520867.4A CN202210520867A CN114899169A CN 114899169 A CN114899169 A CN 114899169A CN 202210520867 A CN202210520867 A CN 202210520867A CN 114899169 A CN114899169 A CN 114899169A
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chip
semiconductor capacitor
functional
tiled
package structure
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尹小平
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Cosemitech (shanghai) Co ltd
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Cosemitech (shanghai) Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49589Capacitor integral with or on the leadframe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/642Capacitive arrangements

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention provides a multi-chip and multi-chip flat package structure which comprises a lead frame and a plastic package body, wherein the plastic package body is formed in a carrying area of the lead frame, a semiconductor capacitor and at least one functional chip are packaged in the plastic package body, the semiconductor capacitor and the at least one functional chip are positioned on the carrying area, and the functional chip and the semiconductor capacitor are laid on the carrying area side by side and can be electrically connected with pins. In the invention, compared with the chip capacitor in the related art, the semiconductor capacitor has small volume, so that the semiconductor capacitor can be tiled and packaged together with the functional chip in the chip carrying area. In this case, the semiconductor capacitor is closer to the functional chip, which can greatly reduce the electric signal delay generated by packaging, reduce the parasitic inductance on the multi-chip tiled packaging structure, and further improve the EMC resistance of the functional chip due to the reduction of the parasitic inductance and the delay.

Description

多芯片平铺封装结构Multi-chip tiled package structure

技术领域technical field

本发明涉及磁传感器技术领域,具体涉及一种多芯片平铺封装结构。The invention relates to the technical field of magnetic sensors, in particular to a multi-chip tiled packaging structure.

背景技术Background technique

电磁兼容性(EMC,即Electromagnetic Compatibility)是指设备或系统在其电磁环境中符合要求运行并不对其环境中的任何设备产生无法忍受的电磁骚扰的能力。Electromagnetic Compatibility (EMC, Electromagnetic Compatibility) refers to the ability of a device or system to operate compliantly in its electromagnetic environment without causing intolerable electromagnetic disturbance to any device in its environment.

在相关技术领域中,业界为解决抗EMC能力,在引线框架中上采用图1所示两个塑封体,其中一个塑封体形成于引线框架的载片区并封装有功能芯片,另一个塑封体形成于引线框架的引脚并封装有片式电容。In the related technical field, in order to solve the EMC resistance, the industry adopts two plastic packages as shown in FIG. 1 on the lead frame. One plastic package is formed in the carrier area of the lead frame and encapsulated with a functional chip, and the other plastic package is formed on the lead frame pins and packaged with chip capacitors.

这样,当电磁干扰从电源端和功能芯片自身引入时,在电源和地之间引入该片式电容可以起到电气滤波的作用,从而可以提高该封装结构对应器件的抗EMC能力。In this way, when electromagnetic interference is introduced from the power supply terminal and the functional chip itself, the introduction of the chip capacitor between the power supply and the ground can play the role of electrical filtering, thereby improving the EMC resistance of the device corresponding to the package structure.

发明内容SUMMARY OF THE INVENTION

针对现有技术中的问题,本发明的目的在于提供一种多芯片平铺封装结构,能够降低功能芯片的信号延迟。In view of the problems in the prior art, the purpose of the present invention is to provide a multi-chip tiled packaging structure, which can reduce the signal delay of functional chips.

本发明实施例提供一种多芯片平铺封装结构,其包括:An embodiment of the present invention provides a multi-chip tiled packaging structure, which includes:

引线框架,具有载片区及从载片区延伸的引脚;a lead frame having a carrier area and pins extending from the carrier area;

形成于载片区的塑封体,在塑封体内封装有位于载片区上的半导体电容及至少一个功能芯片,其中功能芯片和半导体电容在载片区上呈平铺分布。The plastic package formed in the carrier area encapsulates the semiconductor capacitor and at least one functional chip on the carrier area, wherein the functional chip and the semiconductor capacitor are distributed in a tiled manner on the carrier area.

可选地,半导体电容的引线及功能芯片的引线均封装于塑封体内,并与相应的引脚电连接。Optionally, the leads of the semiconductor capacitor and the leads of the functional chip are both packaged in a plastic package and electrically connected to corresponding pins.

可选地,在功能芯片与半导体电容之间形成有间隙,功能芯片和半导体电容中至少一个的引线位于间隙内。Optionally, a gap is formed between the functional chip and the semiconductor capacitor, and the lead of at least one of the functional chip and the semiconductor capacitor is located in the gap.

可选地,半导体电容的一个极板与电源引脚之间,以及所述半导体电容的另一个极板与接地引脚之间均通过引线键合进行电连接。Optionally, wire bonding is used for electrical connection between one electrode plate of the semiconductor capacitor and the power supply pin, and between the other electrode plate of the semiconductor capacitor and the ground pin.

可选地,功能芯片的电源接入端与电源引脚之间,所述功能芯片的接地端与接地引脚之间均通过引线键合进行电连接。Optionally, between the power access terminal of the function chip and the power supply pin, the ground terminal of the function chip and the ground pin are electrically connected by wire bonding.

可选地,功能芯片和半导体电容在载片区上的投影无交叠。Optionally, the projections of the functional chip and the semiconductor capacitor on the slide area do not overlap.

可选地,引线框架的厚度范围为0.1~1mm。Optionally, the thickness of the lead frame ranges from 0.1 to 1 mm.

可选地,塑封体厚度在0.5mm到3mm之间。Optionally, the thickness of the plastic package is between 0.5mm and 3mm.

可选地,引线框架为金属材质。Optionally, the lead frame is made of metal.

本公开实施例还提供一种磁传感器,其形成于上述任一实施例的多芯片平铺封装结构,功能芯片为磁传感器芯片。An embodiment of the present disclosure further provides a magnetic sensor, which is formed in the multi-chip tiled packaging structure of any of the above embodiments, and the functional chip is a magnetic sensor chip.

本发明所提供的多芯片平铺封装结构具有如下优点:The multi-chip tiled packaging structure provided by the present invention has the following advantages:

多芯片平铺封装结构包括引线框架和塑封体,其中塑封体形成于引线框架的载片区,在塑封体内封装有位于载片区上的半导体电容及至少一个功能芯片,其中功能芯片和半导体电容并排铺设在载片区上,并能够与引脚电连接。The multi-chip tiled packaging structure includes a lead frame and a plastic package, wherein the plastic package is formed in the carrier area of the lead frame, and a semiconductor capacitor and at least one functional chip on the carrier area are packaged in the plastic package, wherein the functional chip and the semiconductor capacitor are laid side by side. on the carrier area and can be electrically connected to the pins.

在本公开实施例中,相比于相关技术中的片式电容,半导体电容体积小,从而能够与功能芯片一起平铺封装在载片区。在这种情况下,半导体电容距离功能芯片较近,这能够大幅降低因封装而产生的电信号延迟,降低多芯片平铺封装结构上的寄生电感,由于寄生电感和延迟的减小,进一步提高了功能芯片的抗EMC能力。In the embodiments of the present disclosure, compared with the chip capacitors in the related art, the semiconductor capacitors are small in size, so that they can be tiled and packaged in the carrier area together with the functional chips. In this case, the semiconductor capacitor is closer to the functional chip, which can greatly reduce the electrical signal delay caused by packaging, and reduce the parasitic inductance on the multi-chip tiled packaging structure. Due to the reduction of parasitic inductance and delay, it can further improve The EMC resistance of functional chips is improved.

附图说明Description of drawings

通过阅读参照以下附图对非限制性实施例所作的详细描述,本发明的其它特征、目的和优点将会变得更明显。Other features, objects and advantages of the present invention will become more apparent upon reading the detailed description of non-limiting embodiments with reference to the following drawings.

图1为现有技术的多芯片平铺封装结构的正面剖视图;1 is a front cross-sectional view of a multi-chip tiled packaging structure of the prior art;

图2为本公开一种实施例提供的多芯片平铺封装结构的正面剖视图;2 is a front cross-sectional view of a multi-chip tiled packaging structure provided by an embodiment of the present disclosure;

图3为本公开一种实施例提供的多芯片平铺封装结构的侧面剖视图;3 is a side cross-sectional view of a multi-chip tiled packaging structure provided by an embodiment of the present disclosure;

图4是本发明一实施例的多芯片平铺封装结构中封装电路图。4 is a package circuit diagram of a multi-chip tiled package structure according to an embodiment of the present invention.

具体实施方式Detailed ways

以下通过特定的具体实例说明本申请的实施方式,本领域技术人员可由本申请所揭露的内容轻易地了解本申请的其他优点与功效。本申请还可以通过另外不同的具体实施方式加以实施或应用系统,本申请中的各项细节也可以根据不同观点与应用系统,在没有背离本申请的精神下进行各种修饰或改变。需说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。The embodiments of the present application are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in the present application. The present application can also be implemented or applied to the system through other different specific embodiments, and various details in the present application can also be modified or changed according to different viewpoints and applied systems without departing from the spirit of the present application. It should be noted that the embodiments in the present application and the features of the embodiments may be combined with each other under the condition of no conflict.

下面以附图为参考,针对本申请的实施例进行详细说明,以便本申请所属技术领域的技术人员能够容易地实施。本申请可以以多种不同形态体现,并不限定于此处说明的实施例。The embodiments of the present application will be described in detail below with reference to the accompanying drawings, so that those skilled in the art to which the present application pertains can easily implement. The present application can be embodied in many different forms, and is not limited to the embodiments described herein.

在本申请的表示中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的表示意指结合该实施例或示例表示的具体特征、结构、材料或者特点包括于本申请的至少一个实施例或示例中。而且,表示的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本申请中表示的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the representations of this application, references to the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples", etc., are intended to be combined with the specific features represented by the embodiment or example. , structure, material or feature is included in at least one embodiment or example of the present application. Furthermore, the particular features, structures, materials or characteristics shown may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art may combine and combine the different embodiments or examples presented in this application, as well as the features of the different embodiments or examples, without conflicting each other.

此外,术语“第一”、“第二”仅用于表示目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或隐含地包括至少一个该特征。在本申请的表示中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature delimited with "first", "second" may expressly or implicitly include at least one of that feature. In the expression of this application, "plurality" means two or more, unless expressly and specifically defined otherwise.

为了明确说明本申请,省略与说明无关的器件,对于通篇说明书中相同或类似的构成要素,赋予了相同的参照符号。In order to clearly describe the present application, components irrelevant to the description are omitted, and the same or similar components are assigned the same reference numerals throughout the specification.

在通篇说明书中,当说某器件与另一器件“连接”时,这不仅包括“直接连接”的情形,也包括在其中间把其它元件置于其间而“间接连接”的情形。另外,当说某种器件“包括”某种构成要素时,只要没有特别相反的记载,则并非将其它构成要素排除在外,而是意味着可以还包括其它构成要素。Throughout the specification, when a device is said to be "connected" to another device, this includes not only the case of "direct connection" but also the case of "indirect connection" with other elements interposed therebetween. In addition, when it is said that a certain device "includes" a certain constituent element, unless there is no particular description to the contrary, it does not exclude other constituent elements, but means that other constituent elements may also be included.

当说某器件在另一器件“之上”时,这可以是直接在另一器件之上,但也可以在其之间伴随着其它器件。当对照地说某器件“直接”在另一器件“之上”时,其之间不伴随其它器件。When a device is said to be "on" another device, this can be directly on the other device, but it can also be accompanied by other devices in between. When a device is said to be "directly on" another device in contrast, there are no other devices in between.

虽然在一些实例中术语第一、第二等在本文中用来表示各种元件,但是这些元件不应当被这些术语限制。这些术语仅用来将一个元件与另一个元件进行区分。例如,第一接口及第二接口等表示。再者,如同在本文中所使用的,单数形式“一”、“一个”和“该”旨在也包括复数形式,除非上下文中有相反的指示。应当进一步理解,术语“包含”、“包括”表明存在的特征、步骤、操作、元件、组件、项目、种类、和/或组,但不排除一个或多个其他特征、步骤、操作、元件、组件、项目、种类、和/或组的存在、出现或添加。此处使用的术语“或”和“和/或”被解释为包括性的,或意味着任一个或任何组合。因此,“A、B或C”或者“A、B和/或C”意味着“以下任一个:A;B;C;A和B;A和C;B和C;A、B和C”。仅当元件、功能、步骤或操作的组合在某些方式下内在地互相排斥时,才会出现该定义的例外。Although in some instances the terms first, second, etc. are used herein to refer to various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first interface and the second interface, etc. are represented. Also, as used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context dictates otherwise. It should be further understood that the terms "comprising" and "comprising" indicate the presence of features, steps, operations, elements, components, items, kinds, and/or groups, but do not exclude one or more other features, steps, operations, elements, The existence, appearance or addition of components, items, categories, and/or groups. The terms "or" and "and/or" as used herein are to be construed to be inclusive or to mean any one or any combination. Thus, "A, B or C" or "A, B and/or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C" . Exceptions to this definition arise only when combinations of elements, functions, steps, or operations are inherently mutually exclusive in some way.

此处使用的专业术语只用于言及特定实施例,并非意在限定本申请。此处使用的单数形态,只要语句未明确表示出与之相反的意义,那么还包括复数形态。在说明书中使用的“包括”的意义是把特定特性、区域、整数、步骤、作业、要素及/或成份具体化,并非排除其它特性、区域、整数、步骤、作业、要素及/或成份的存在或附加。The technical terms used herein are only used to refer to specific embodiments and are not intended to limit the application. The singular form used here also includes the plural form, as long as the sentence does not clearly express the opposite meaning. The meaning of "comprising" as used in the specification is to embody particular characteristics, regions, integers, steps, operations, elements and/or components, but not to exclude other characteristics, regions, integers, steps, operations, elements and/or components exist or append.

虽然未不同地定义,但包括此处使用的技术术语及科学术语,所有术语均具有与本申请所属技术领域的技术人员一般理解的意义相同的意义。普通使用的字典中定义的术语追加解释为具有与相关技术文献和当前提示的内容相符的意义,只要未进行定义,不得过度解释为理想的或非常公式性的意义。Although not defined differently, including technical and scientific terms used herein, all terms have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. Terms defined in commonly used dictionaries are additionally interpreted to have meanings consistent with the content of the relevant technical literature and current tips, and as long as they are not defined, they should not be unduly interpreted as ideal or very formulaic meanings.

对相关技术进行分析发现,相应的封装结构采用分离塑封体,虽然能够增强抗EMC能力,但是由于片式电容与功能芯片距离较远,使得电信号延迟加长,寄生电感大,影响到功能芯片的性能。The analysis of related technologies shows that the corresponding packaging structure adopts a separate plastic body, although it can enhance the EMC resistance, but due to the long distance between the chip capacitor and the functional chip, the delay of the electrical signal is prolonged, and the parasitic inductance is large, which affects the performance of the functional chip. performance.

而且采用分离塑封体,产品集成度低,产品体积大。另外,双塑封体加工复杂,防潮等级差,产品应用空间处理复杂,限制了终端产品的应用场景等缺陷。再者,采用双塑封体相当于多出一个故障部位,产品可靠性有所下降。Moreover, the separation plastic body is adopted, the product integration degree is low, and the product volume is large. In addition, the double-molded body is complicated to process, the moisture-proof level is poor, and the product application space is complicated, which limits the application scenarios of the end product. Furthermore, the use of a double-molded body is equivalent to one more fault location, and the reliability of the product is reduced.

因此,本公开实施例所要解决的技术问题是,如何在不降低抗EMC 能力的情况下,降低或避免电信号延迟,并能够降低封装体积,提升产品集成度。Therefore, the technical problem to be solved by the embodiments of the present disclosure is how to reduce or avoid electrical signal delay without reducing the EMC resistance, so as to reduce the package volume and improve the product integration.

为了解决相关技术的技术问题,本公开实施例提供一种新的多芯片平铺封装结构,该多芯片平铺封装结构包括引线框架和塑封体,其中塑封体形成于引线框架的载片区,在塑封体内封装有位于载片区上的半导体电容及至少一个功能芯片,其中功能芯片和半导体电容并排铺设在载片区上,并能够与引脚电连接。In order to solve the technical problems of the related art, an embodiment of the present disclosure provides a new multi-chip tiled package structure, the multi-chip tiled package structure includes a lead frame and a plastic package, wherein the plastic package is formed in the carrier area of the lead frame, The plastic package is encapsulated with a semiconductor capacitor and at least one functional chip on the carrier area, wherein the functional chip and the semiconductor capacitor are laid side by side on the carrier area and can be electrically connected to the pins.

在本公开实施例中,相比于相关技术中的片式电容,半导体电容体积小,从而能够与功能芯片一起平铺封装在载片区。在这种情况下,半导体电容距离功能芯片较近,这能够大幅降低因封装而产生的电信号延迟,降低多芯片平铺封装结构上的寄生电感,由于寄生电感和延迟的减小,进一步提高了功能芯片的抗EMC能力。In the embodiments of the present disclosure, compared with the chip capacitors in the related art, the semiconductor capacitors are small in size, so that they can be tiled and packaged in the carrier area together with the functional chips. In this case, the semiconductor capacitor is closer to the functional chip, which can greatly reduce the electrical signal delay caused by packaging, and reduce the parasitic inductance on the multi-chip tiled packaging structure. Due to the reduction of parasitic inductance and delay, it can further improve The EMC resistance of functional chips is improved.

而且,一体封装降低了封装难度,通过多芯片平铺封装结构的可靠性和防潮能力。Moreover, the integrated package reduces the packaging difficulty, reliability and moisture resistance through the multi-chip tiled packaging structure.

再者,封装体积减小,这能够方便业界使用。Furthermore, the package volume is reduced, which is convenient for the industry to use.

因此,本公开实施例采用半导体电容在解决上述技术问题方面具有较高可行性。Therefore, the embodiments of the present disclosure have high feasibility in solving the above technical problems by using semiconductor capacitors.

图2为本公开实施例提供的多芯片平铺封装结构的正面剖视图,图3 为本公开实施例提供的多芯片平铺封装结构的侧面剖视图,参考图2和图 3,本多芯片平铺封装结构包括:2 is a front cross-sectional view of a multi-chip tiled packaging structure provided by an embodiment of the present disclosure, and FIG. 3 is a side cross-sectional view of the multi-chip tiled packaging structure provided by an embodiment of the present disclosure. Referring to FIG. 2 and FIG. The package structure includes:

引线框架10,具有载片区11及从载片区11延伸的引脚12;The lead frame 10 has a carrier area 11 and pins 12 extending from the carrier area 11;

形成于载片区11的塑封体20,在塑封体20内封装有位于载片区11 上的半导体电容21及至少一个功能芯片22,其中功能芯片22和半导体电容21在载片区11上呈平铺分布。The plastic package 20 formed in the carrier area 11 is encapsulated in the plastic package 20 with a semiconductor capacitor 21 and at least one functional chip 22 located on the carrier area 11 , wherein the functional chip 22 and the semiconductor capacitor 21 are distributed in a tiled manner on the carrier area 11 .

采用如是方案,在一种应用示例中,参考图4,半导体电容21与功能芯片22之间采用并联连接。半导体电容21起到电气滤波的作用,当有电磁干扰从电源端VCC(视为来自外部的EMC)和功能芯片(Die) (视为来自内部的EMC)22自身引入时,电磁干扰可以通过半导体电容 21电气滤波到地GND而不至于去影响Die的工作。With such a solution, in an application example, referring to FIG. 4 , the semiconductor capacitor 21 and the functional chip 22 are connected in parallel. The semiconductor capacitor 21 plays the role of electrical filtering. When electromagnetic interference is introduced from the power supply terminal VCC (which is regarded as external EMC) and the functional chip (Die) (which is regarded as internal EMC) 22 itself, the electromagnetic interference can pass through the semiconductor. The capacitor 21 is electrically filtered to the ground GND without affecting the operation of Die.

在本公开实施例中,半导体电容21为基于硅材料的芯片式电容。In the embodiment of the present disclosure, the semiconductor capacitor 21 is a silicon-based chip capacitor.

半导体电容结构基于标准CMOS工艺中无需额外成本即可制作的金属-氧化层-金属(metal-oxide-metal,MOM)结构为其优选的实施方式,也就是说,以金属层作为导电材料,并以氧化层作为介电材料而构成的电容器。但是如熟悉半导体制造技术的人所广泛悉知,本发明的核心概念自不一定如实施例中所记载的材料实现,其他各种常见或创新的导电材料或介电材料亦可以用于实现本发明的半导体电容结构。The semiconductor capacitor structure is based on a metal-oxide-metal (MOM) structure that can be fabricated in standard CMOS processes without additional cost. A capacitor constructed with an oxide layer as a dielectric material. However, as is widely known by those who are familiar with semiconductor manufacturing technology, the core concept of the present invention is not necessarily realized by the materials described in the embodiments, and other common or innovative conductive materials or dielectric materials can also be used to realize the present invention. Invention of the semiconductor capacitor structure.

相比于现有技术中片式电容采用金属作极板的方案,半导体电容21 的体积大幅降低,这能够提升本公开实施例一体塑封方案的可行性。Compared with the solution in the prior art in which the chip capacitor uses metal as the electrode plate, the volume of the semiconductor capacitor 21 is greatly reduced, which can improve the feasibility of the integrated plastic packaging solution of the embodiment of the present disclosure.

在本公开实施例中,功能芯片22和半导体电容21在载片区11上的投影无交叠,这样功能芯片22和半导体电容21平铺分布在载片区11上,均可贴装于载片区11。In the embodiment of the present disclosure, the projections of the functional chip 22 and the semiconductor capacitor 21 on the carrier area 11 do not overlap, so that the functional chip 22 and the semiconductor capacitor 21 are tiled and distributed on the carrier area 11 and can be mounted on the carrier area 11 .

图2及图3中仅示出一个功能芯片22,此仅为示例,在其他实施例中功能芯片还可以是其他数量,在此不做具体限定。Only one functional chip 22 is shown in FIG. 2 and FIG. 3 , which is only an example. In other embodiments, the number of functional chips may also be other, which is not specifically limited herein.

在封装过程中,首先将半导体电容21和功能芯片22并排封装在载片区11,然后对载片区11进行塑封得到塑封体20。In the packaging process, the semiconductor capacitor 21 and the functional chip 22 are firstly packaged in the carrier area 11 side by side, and then the carrier area 11 is plastic-encapsulated to obtain the plastic package 20 .

其中,功能芯片22和半导体电容21在载片区11上,可通过贴片胶与载片区11粘合在一起。塑封体20可以采用塑封料树脂,用于包装功能芯片22和半导体电容21,并且在塑封料树脂中填充有大量填充料。Among them, the functional chip 22 and the semiconductor capacitor 21 are on the carrier area 11 and can be bonded to the carrier area 11 by a patch glue. The molding compound 20 can be made of a molding compound resin for packaging the functional chip 22 and the semiconductor capacitor 21, and a large amount of filler is filled in the molding compound resin.

在相应工艺中,功能芯片22和半导体电容21各自本身外包绝缘材料,或塑封体20材料也具有绝缘性,不会产生相互干扰。In the corresponding process, the functional chip 22 and the semiconductor capacitor 21 are each wrapped with insulating material, or the material of the plastic package 20 also has insulating properties and will not interfere with each other.

本公开实施例提供基于引线框架的芯片-电容平铺封装设计方案,业内首次将芯片+薄形的半导体电容铺贴装在载片区,封装进单一的塑封体内,实现新的多芯片平铺封装结构和一体塑封体的简洁外形。The embodiment of the present disclosure provides a chip-capacitor tile packaging design scheme based on a lead frame. For the first time in the industry, the chip+thin semiconductor capacitor is paved in the carrier area and packaged into a single plastic package to realize a new multi-chip tile package. The structure and the compact shape of the one-piece molded body.

在本公开一种实施例中,半导体电容21的引线及功能芯片22的引线均封装于塑封体20内,并与相应的引脚电连接,此时塑封体20对引线具有保护作用。In an embodiment of the present disclosure, the leads of the semiconductor capacitor 21 and the leads of the functional chip 22 are both encapsulated in the plastic package 20 and electrically connected to the corresponding pins. At this time, the plastic package 20 has a protective effect on the leads.

在一种实施例中,半导体电容21的一个极板与电源引脚之间,以及半导体电容21的另一个极板与接地引脚之间均通过引线键合进行电连接。图2和图3示出了两个引脚12,可以分别用于连接电源端和接地,其中一个引脚为电源引脚,另一个引脚为接地引脚。对于该实施例可以参考图4所示电路图,通过这种电连接方式,半导体电容21能够起到电气滤波作用。In one embodiment, one electrode plate of the semiconductor capacitor 21 and the power supply pin and the other electrode plate of the semiconductor capacitor 21 and the ground pin are electrically connected by wire bonding. FIG. 2 and FIG. 3 show two pins 12, which can be used to connect the power terminal and the ground respectively, one of which is a power pin and the other is a ground pin. For this embodiment, reference may be made to the circuit diagram shown in FIG. 4 . Through this electrical connection, the semiconductor capacitor 21 can play an electrical filtering role.

在其他可选应用场景中,引线框架可以有其他功能引脚或其他数量的引脚,可根据需要调整引线连接,在此不做限定。In other optional application scenarios, the lead frame can have other functional pins or other numbers of pins, and the lead connections can be adjusted as required, which is not limited here.

在本公开一种实施例中,功能芯片22的电源接入端与电源引脚之间,所述功能芯片22的接地端与接地引脚之间均通过引线键合进行电连接。In an embodiment of the present disclosure, between the power access terminal of the function chip 22 and the power supply pin, the ground terminal of the function chip 22 and the ground pin are electrically connected by wire bonding.

这样,半导体电容21的引线与功能芯片22的引线之间可以接触或不接触,在此不作限定。In this way, the leads of the semiconductor capacitor 21 and the leads of the functional chip 22 may or may not be in contact, which is not limited herein.

在封装过程中,采用引线键合工艺形成半导体电容21的引线及功能芯片22的引线。引线键合(Wire Bonding)是一种使用细金属线,利用热、压力、超声波能量为使金属引线与载片区11所对应焊盘紧密焊合。In the packaging process, a wire bonding process is used to form the leads of the semiconductor capacitor 21 and the leads of the functional chip 22 . Wire bonding is a method of using thin metal wires to closely bond the metal wires to the pads corresponding to the carrier area 11 by using heat, pressure and ultrasonic energy.

在本公开一种实施例中,在功能芯片22与半导体电容21之间形成有间隙,功能芯片22和半导体电容21中至少一个的引线位于间隙内,并连接到引脚12。In one embodiment of the present disclosure, a gap is formed between the functional chip 22 and the semiconductor capacitor 21 , and the lead of at least one of the functional chip 22 and the semiconductor capacitor 21 is located in the gap and connected to the pin 12 .

其中,间隙将为布置引线提供相应空间。功能芯片22和半导体电容 21与引脚12之间的引线可以为铜线或金线。Among them, the gap will provide corresponding space for routing the leads. The leads between the functional chip 22 and the semiconductor capacitor 21 and the pins 12 can be copper wires or gold wires.

在本公开实施例中,引线框架10的厚度h1范围为为0.1~1mm。其中如果引线框架10的厚度低于0.1,则载片区11将无法有效支撑塑封体 20;而如果引线框架10的厚度高于1mm,会带来成本问题。In the embodiment of the present disclosure, the thickness h 1 of the lead frame 10 ranges from 0.1 to 1 mm. Wherein, if the thickness of the lead frame 10 is less than 0.1, the carrier area 11 will not be able to effectively support the plastic package 20; and if the thickness of the lead frame 10 is higher than 1 mm, a cost problem will arise.

在本公开一种实施例中,塑封体20厚度h2在0.5mm到3mm之间。通过设置塑封体20的厚度不小于0.5mm,能够对半导体电容21和功能芯片22形成稳定封装,并起到防潮隔离作用。通过设置塑封体20的厚度不大于3mm,能够提供合适的产品集成度。In an embodiment of the present disclosure, the thickness h 2 of the plastic sealing body 20 is between 0.5 mm and 3 mm. By setting the thickness of the plastic package 20 to be not less than 0.5 mm, a stable package can be formed for the semiconductor capacitor 21 and the functional chip 22, and the function of moisture-proof isolation can be achieved. By setting the thickness of the plastic package 20 to be no greater than 3 mm, a suitable product integration degree can be provided.

在本公开一种实施例中,引线框架为金属材质。In an embodiment of the present disclosure, the lead frame is made of metal.

本公开实施例还提供一种磁传感器,该磁传感器形成于上述多芯片平铺封装结构,这样功能芯片为磁传感器芯片。An embodiment of the present disclosure further provides a magnetic sensor, which is formed in the above-mentioned multi-chip tiled packaging structure, such that the functional chip is a magnetic sensor chip.

磁传感器是把磁场、电流、应力应变、温度、光等外界因素引起敏感元件磁性能变化转换成电信号,以这种方式来检测相应物理量的器件。磁传感器广泛用于现代工业和电子产品中以感应磁场强度来测量电流、位置、方向等物理参数,也有许多不同类型的传感器用于测量磁场和其他参数。A magnetic sensor is a device that converts the magnetic properties of sensitive components caused by external factors such as magnetic field, current, stress and strain, temperature, and light into electrical signals, and detects the corresponding physical quantities in this way. Magnetic sensors are widely used in modern industry and electronic products to measure physical parameters such as current, position, and direction by sensing the strength of magnetic fields. There are also many different types of sensors used to measure magnetic fields and other parameters.

例如,磁传感器被广泛用于工业控制和汽车电子,能够提供新一代汽车级增强抗EMC能力的薄形一体封装。For example, magnetic sensors are widely used in industrial control and automotive electronics to provide a new generation of automotive-grade, low-profile, one-piece packages with enhanced EMC immunity.

其中,该磁传感器的基本单元可以如图2和图3所示多芯片平铺封装结构。在此基础上,还可以增加其他元器件,来组成最终磁传感器的成品。The basic unit of the magnetic sensor may have a multi-chip tiled package structure as shown in FIG. 2 and FIG. 3 . On this basis, other components can also be added to form the final product of the magnetic sensor.

以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be considered that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deductions or substitutions can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims (10)

1. A multi-chip tiled package structure, comprising:
a lead frame having a carrier region and pins extending from the carrier region;
the chip-on-chip packaging structure comprises a plastic packaging body formed in a chip-carrying area, wherein a semiconductor capacitor and at least one functional chip are packaged in the plastic packaging body, the semiconductor capacitor and the at least one functional chip are positioned on the chip-carrying area, and the functional chips and the semiconductor capacitor are distributed on the chip-carrying area in a tiled mode.
2. The multi-chip tiling package structure of claim 1, wherein the leads of the semiconductor capacitors and the leads of the functional chips are packaged in the plastic package and electrically connected to the corresponding leads.
3. The multi-chip tiling package structure of claim 2, wherein a gap is formed between the functional chip and the semiconductor capacitor, and leads of at least one of the functional chip and the semiconductor capacitor are located within the gap.
4. The multi-chip tiled package structure according to claim 2, wherein the electrical connection between one plate of the semiconductor capacitor and a power pin and the electrical connection between the other plate of the semiconductor capacitor and a ground pin are made by wire bonding.
5. The multi-chip tiling package structure of claim 2, wherein the power access terminals of the functional chips and the power pins, and the ground terminals of the functional chips and the ground pins are electrically connected by wire bonding.
6. The multi-chip tiled package structure according to claim 1, wherein the projections of the functional chips and the semiconductor capacitors on the carrier area do not overlap.
7. The multi-chip tiled package structure according to claim 1, wherein the thickness of the lead frame ranges from 0.1 to 1 mm.
8. The multi-chip tile package structure of claim 1, wherein the molding compound has a thickness between 0.5mm and 3 mm.
9. The multi-chip tile package structure of claim 1, wherein the lead frame is a metal.
10. A magnetic sensor formed in the multi-chip tiling package structure of any one of claims 1-9, wherein the functional chips are magnetic sensor chips.
CN202210520867.4A 2022-05-13 2022-05-13 Multi-chip flat-laying packaging structure Pending CN114899169A (en)

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