CN114899165B - Power module electrode needle internal connection structure and power module - Google Patents
Power module electrode needle internal connection structure and power moduleInfo
- Publication number
- CN114899165B CN114899165B CN202210422372.8A CN202210422372A CN114899165B CN 114899165 B CN114899165 B CN 114899165B CN 202210422372 A CN202210422372 A CN 202210422372A CN 114899165 B CN114899165 B CN 114899165B
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- copper
- power module
- insulating substrate
- connection structure
- electrode needle
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Wire Bonding (AREA)
Abstract
本发明提供一种功率模块电极针内部连接结构及功率模块，属于功率模块技术领域，包括：预先注塑有电极针的外壳；设置于外壳内部的绝缘基板，绝缘基板具有导电铜带；绝缘基板通过导电铜带与电极针的底部分别通过铜铜键合工艺相连接。有益效果：本发明的绝缘基板采用导电铜带作为连接介质与和电极针进行铜铜键合，相比铝丝键合的连接方式，导电铜带的连接面积增大，超声波功率高，降低了键合工艺要求；并且由于并非是直接对绝缘基板和电极针进行铜铜键合工艺处理，避免了在键合过程中破坏陶瓷从而导致其绝缘能力降低的风险；同时键合点处产生的热量可以从绝缘基板进行散热，降低了对塑料外壳和电极针的材料要求，可大幅降低成本。
The present invention provides an internal connection structure of an electrode needle of a power module and a power module, belonging to the technical field of power modules, comprising: a shell pre-molded with an electrode needle; an insulating substrate arranged inside the shell, the insulating substrate having a conductive copper tape; the insulating substrate is connected to the bottom of the electrode needle through the conductive copper tape by a copper-copper bonding process. Beneficial effect: The insulating substrate of the present invention uses a conductive copper tape as a connecting medium to perform copper-copper bonding with the electrode needle. Compared with the connection method of aluminum wire bonding, the connection area of the conductive copper tape is increased, the ultrasonic power is high, and the bonding process requirements are reduced; and because the insulating substrate and the electrode needle are not directly subjected to the copper-copper bonding process, the risk of damaging the ceramic during the bonding process, thereby reducing its insulation capacity, is avoided; at the same time, the heat generated at the bonding point can be dissipated from the insulating substrate, reducing the material requirements for the plastic shell and the electrode needle, and can significantly reduce costs.
Description
Technical Field
The present invention relates to the field of power modules, and in particular, to an internal connection structure of an electrode pin of a power module and a power module.
Background
The power module is widely applied in the power industry, such as the fields of frequency converters, photovoltaics, power compensation, electric vehicles, hybrid electric vehicles and the like. In the existing internal circuit connection structure, the electrodes of the power module are generally embedded and integrally injection molded on the plastic shell, and then the direct copper-clad plate (directbonding copper, DBC) and the electrode needle are directly connected together through an aluminum wire bonding process, see fig. 1-4. The aluminum wire bonding process is to connect the aluminum wire and the aluminum surface of the electrode needle together in an atomic bonding mode by utilizing ultrasonic energy.
The bonding method has high requirements on the material of the bonding surface of the electrode needle, and the bonding surface is made of aluminum material because the main body of the electrode needle is made of copper material, so that a complex copper-aluminum composite process is required. Meanwhile, the manufacturing process of the plastic shell frame has high requirements, once the injection molding surface of the electrode needle and the plastic shell is loosened, ultrasonic energy can be dissipated, so that the process is invalid, when the existing power module works, the bonding point of the electrode needle can generate heat, the thermal resistance of the plastic material is large, and the heat dissipation difference is large, so that high and low temperature stress is generated, the electrode needle falls off, and the service life of the power module is influenced. Therefore, in view of the above problems, the present invention provides a novel power module electrode pin internal connection structure and a power module.
Disclosure of Invention
In order to solve the technical problems, the invention provides an internal connection structure of an electrode pin of a power module and the power module.
The technical problems solved by the invention can be realized by adopting the following technical scheme:
A power module electrode pin internal connection structure, comprising:
The shell is provided with an electrode needle in an injection molding mode in advance;
the insulating substrate is arranged in the shell and is provided with a conductive copper strip;
The insulating substrate is connected with the bottom of the electrode needle through the conductive copper strip through copper-copper bonding processes.
Preferably, the insulating substrate further comprises a front copper foil layer;
the conductive copper strip is obtained by three-dimensional treatment of the edge of the front copper foil layer.
Preferably, the insulating substrate further comprises a back copper foil layer and a ceramic layer positioned between the front copper foil layer and the back copper foil layer.
Preferably, the ceramic layer is made of alumina ceramic.
Preferably, the conductive copper strip is made of red copper material.
Preferably, the electrode needle is made of pure copper material.
Preferably, the insulating substrate is a direct copper-clad substrate.
Preferably, the housing is made of plastic.
Preferably, the insulating substrates comprise a plurality of insulating substrates, and different insulating substrates are connected through an aluminum wire bonding process.
The invention also provides a power module which comprises the internal connection structure of the electrode needle of the power module.
The technical scheme of the invention has the advantages that:
The insulating substrate adopts the conductive copper strip as a connecting medium to be in copper-copper bonding with the electrode needle, compared with the connecting mode of aluminum wire bonding, the connecting area of the conductive copper strip is increased, the ultrasonic power is high, the bonding process requirement is reduced, the insulating substrate and the electrode needle are not directly subjected to copper-copper bonding process treatment, the risk of ceramic damage in the bonding process to reduce the insulating capability of the insulating substrate is avoided, meanwhile, heat generated at a bonding point can be dissipated from the insulating substrate, the material requirement on a plastic shell and the electrode needle is reduced, and the cost can be greatly reduced.
Drawings
Fig. 1 is a schematic view of an external structure of a power module in the prior art;
FIG. 2 is a schematic diagram of an internal connection structure of a power module according to the prior art;
FIG. 3 is a top view of a prior art internal connection structure of a power module;
FIG. 4 is a left side view of a prior art internal connection structure of a power module;
FIG. 5 is a schematic diagram showing the structure of the connection structure of the electrode pins of the power module according to the preferred embodiment of the present invention;
FIG. 6 is a top view of the connection structure of the electrode pins of the power module in the preferred embodiment of the present invention;
Fig. 7 is a left side view of the connection structure of the electrode pin of the power module in the preferred embodiment of the present invention.
Reference numerals:
1. The electrode comprises a shell, electrode pins, an insulating substrate, conductive copper strips, aluminum wire bonding wires and an insulating substrate.
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples. The present invention is not limited to the embodiment, and other embodiments may fall within the scope of the present invention as long as they conform to the gist of the present invention.
In a preferred embodiment of the present invention, based on the above-mentioned problems existing in the prior art, there is now provided an internal connection structure of an electrode pin 2 of a power module, which belongs to the technical field of power modules, as shown in fig. 5-6, and includes:
the electrode needle comprises a shell 1, wherein an electrode needle 2 is injection-molded on the shell 1 in advance;
An insulating substrate 3 disposed inside the housing 1, the insulating substrate 3 having a conductive copper tape 4;
the insulating substrate 3 is connected with the bottom of the electrode needle 2 through a copper-copper bonding process through a conductive copper strip 4.
Specifically, in this embodiment, the plurality of electrode pins 2 are embedded and distributed on the housing 1, and the housing 1 is generally a plastic housing 1 and is connected to the plastic housing 1 by integral injection molding. The insulating substrate 3 is arranged in the shell 1, preferably, the insulating substrate 3 is a direct copper-clad substrate (directbonding copper, DBC), the insulating substrate 3 adopts a conductive copper strip 4 as a connecting medium to be in copper-copper bonding with the bottom of the electrode needle 2, and compared with the connecting mode of aluminum wire bonding, the connecting area of the conductive copper strip 4 is increased, the ultrasonic power is high, and the requirement on the surface cleanliness of the electrode needle 2 is reduced, so that the bonding process requirement is reduced.
Aiming at the prior art that the insulating substrate 3 and the electrode needle 2 are directly subjected to copper-copper bonding process treatment, the invention creatively proposes to adopt the conductive copper strip 4 as a connecting medium, and avoids the risk of damaging the ceramic layer of the insulating substrate 3 in the direct bonding process to reduce the insulating capability of the insulating substrate.
Furthermore, the thermal resistance of the ceramic layer is far lower than that of the plastic, so that heat generated at the bonding point can be emitted from the ceramic layer of the insulating substrate 3, the electrode needle 2 is prevented from falling off due to high and low temperature stress generated at the bonding point, the material requirements on the plastic shell 1 and the electrode needle 2 are reduced, the cost can be greatly reduced, and the service life of the power module is prolonged.
As a preferred embodiment, wherein the insulating substrate 3 further comprises a front copper foil layer;
The conductive copper strip 4 is obtained by three-dimensional treatment of the edge of the front copper foil layer.
Specifically, the front copper foil layer of the existing insulating substrate 3 is planar, and the embodiment of the invention performs three-dimensional treatment on the front copper foil layer of the existing planar, so that the copper foil at the edge of the insulating substrate 3 can be prolonged to form the conductive copper strip 4. The copper-copper bonding connection between the insulating substrate 3 and the electrode needle 2 is realized by using the conductive copper tape 4 obtained by extension as a connection medium.
As a preferred embodiment, the conductive copper strip 4 is made of a red copper material.
Specifically, in this embodiment, the conductive copper strip 4 is made of red copper, which is soft, has good electrical conductivity and plasticity, and has good thermal conductivity, ductility, weldability and corrosion resistance. The conductive copper strip 4 is adopted to replace the existing aluminum wire bonding wire 5, the contact area of the joint is increased, when heat is generated at the bonding point, the generated heat can be transferred to the insulating substrate 3 through the conductive copper strip 4 and then dissipated through the ceramic layer, so that the electrode needle 2 is prevented from falling off due to overhigh heat at the bonding point, and the problem of heat dissipation of the bonding point is solved.
As a preferred embodiment, the insulating substrate 3 further includes a back copper foil layer, and a ceramic layer between the front copper foil layer and the back copper foil layer.
As a preferred embodiment, the ceramic layer is made of aluminum oxide (Al 2O3) ceramic.
Specifically, in this embodiment, the insulating substrate 3 has a three-dimensional structure with a conductive copper strip 4, specifically includes a front copper foil layer, and an edge copper foil of the front copper foil layer can be prolonged to form a conductive passband, and an Al 2O3 ceramic layer and a back copper foil layer are disposed in the middle, so as to replace the existing planar DBC board.
As a preferred embodiment, the electrode needle 2 is made of pure copper material.
Specifically, in the embodiment, the electrode needle 2 made of pure copper material is adopted to replace the electrode needle 2 made of the existing copper-aluminum composite material. The electrode needle 2 made of pure copper material and the DBC plate with the extension copper foil are electrically connected through a copper-copper bonding process, and the copper atoms of the conductive copper belt 4 and the copper atoms of the electrode needle 2 are bonded by using ultrasonic energy through taking the conductive copper belt 4 of the DBC plate as a connecting medium.
As a preferred embodiment, the housing 1 is made of plastic.
As a preferred embodiment, wherein the insulating substrates 3 include a plurality of different insulating substrates 3 connected by an aluminum wire bonding process.
Specifically, in this embodiment, the plastic housing 1 of the power module is provided with a plurality of insulating substrates 3, and the insulating substrates 3 are DBC boards, and the sizes and shapes of the DBC boards may be the same or different. The front copper foil layers of different insulating substrates 3 are connected through an aluminum wire bonding process.
The invention also provides a power module which comprises the internal connection structure of the electrode needle 2 of the power module.
The insulating substrate has the advantages that the conductive copper strips are used as the connecting medium to be in copper-copper bonding with the electrode pins, compared with the aluminum wire bonding connecting mode, the connecting area of the conductive copper strips is increased, the ultrasonic power is high, bonding process requirements are reduced, the insulating substrate and the electrode pins are not directly subjected to copper-copper bonding process treatment, the risk of ceramic damage in the bonding process to reduce insulating capacity is avoided, heat generated at bonding points can be dissipated from the insulating substrate, material requirements on a plastic shell and the electrode pins are reduced, and cost can be greatly reduced.
The foregoing description is only illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, and it will be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and drawings, and are intended to be included within the scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210422372.8A CN114899165B (en) | 2022-04-21 | 2022-04-21 | Power module electrode needle internal connection structure and power module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210422372.8A CN114899165B (en) | 2022-04-21 | 2022-04-21 | Power module electrode needle internal connection structure and power module |
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| CN114899165A CN114899165A (en) | 2022-08-12 |
| CN114899165B true CN114899165B (en) | 2025-09-30 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900617A (en) * | 2015-05-04 | 2015-09-09 | 嘉兴斯达半导体股份有限公司 | Internal connection structure of power semiconductor module |
| CN212648233U (en) * | 2020-07-28 | 2021-03-02 | 江苏宏微科技股份有限公司 | Connection structure of signal terminal |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4831723A (en) * | 1988-04-12 | 1989-05-23 | Kaufman Lance R | Direct bond circuit assembly with crimped lead frame |
| JP2003258180A (en) * | 2002-02-27 | 2003-09-12 | Sanyo Electric Co Ltd | Method for manufacturing semiconductor device |
| JP5119139B2 (en) * | 2008-12-12 | 2013-01-16 | 富士電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| CN103050459B (en) * | 2013-01-28 | 2016-05-18 | 江苏宏微科技股份有限公司 | Signal terminal of power module and syndeton thereof |
| JP2015142059A (en) * | 2014-01-30 | 2015-08-03 | 株式会社日立製作所 | Power semiconductor module |
| CN210325791U (en) * | 2019-10-25 | 2020-04-14 | 成都赛力康电气有限公司 | A power MOS module structure that facilitates heat dissipation |
| US11678468B2 (en) * | 2020-09-24 | 2023-06-13 | Dana Tm4 Inc. | High density power module |
| CN113948485A (en) * | 2021-10-15 | 2022-01-18 | 青岛晶芯半导体有限公司 | Copper strip bonding packaging structure in semiconductor packaging |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900617A (en) * | 2015-05-04 | 2015-09-09 | 嘉兴斯达半导体股份有限公司 | Internal connection structure of power semiconductor module |
| CN212648233U (en) * | 2020-07-28 | 2021-03-02 | 江苏宏微科技股份有限公司 | Connection structure of signal terminal |
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