CN114799391B - Welding method of silicon carbide target - Google Patents
Welding method of silicon carbide target Download PDFInfo
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- CN114799391B CN114799391B CN202210578586.4A CN202210578586A CN114799391B CN 114799391 B CN114799391 B CN 114799391B CN 202210578586 A CN202210578586 A CN 202210578586A CN 114799391 B CN114799391 B CN 114799391B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/206—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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Abstract
The invention relates to a welding method of a silicon carbide target, which comprises the following steps: (1) Pretreating the target blank and the backboard to obtain a pretreated target; the target blank is made of silicon carbide; (2) And (3) carrying out vacuum brazing treatment on the pretreated target material obtained in the step (1), wherein the welding flux subjected to the vacuum brazing treatment is a silver-based welding lug, and the silicon carbide target material is obtained. The welding method provided by the invention can effectively improve the welding strength and the welding combination rate of the silicon carbide target, avoid the oxidation of the welding flux during welding and avoid the deformation of the welded product.
Description
Technical Field
The invention relates to the field of targets, in particular to a welding method of a silicon carbide target.
Background
The target material is an electronic material with high added value, is a source electrode of a sputtered film material, and in the technical fields of microelectronic semiconductor integrated circuits, film hybrid integrated circuits, chip components, in particular optical discs, magnetic discs, liquid crystal flat panel displays and the like, the sputtering technology is required to prepare nonmetallic films with different materials so as to meet the performance requirements of products such as electrooptical, electromagnetic, piezoelectric and the like.
The sputtering target materials can be divided into three types according to different components, namely a metal sputtering target material, an alloy sputtering target material, a ceramic sputtering target material and the like, wherein the silicon carbide target material is used as an important ceramic compound sputtering target material and is mainly used for vacuum magnetron sputtering coating or vacuum multi-arc ion coating, and is widely studied by students at home and abroad. Because the C-Si ceramic sputtering target material has the excellent performances of light weight, high modulus, high thermal conductivity, low thermal expansion coefficient, high-temperature oxidation resistance and the like, the C-Si ceramic sputtering target material is a very good high-temperature sintering material, and has the oxidation resistance, high hardness and chemical corrosion resistance of silicon carbide, and also has the thermal conductivity of graphite material, good self-lubricity and thermal shock resistance, and is widely applied to the fields of chemical industry, metallurgy, aerospace and nuclear industry. However, the difference between the linear expansion coefficients of the silicon carbide ceramic and the traditional metal solder is large, and large residual stress is generated at the soldered joint, so that the joint performance is reduced, the bonding strength of an interface cannot be effectively exerted, and the larger the size of a workpiece is, the more difficult the successful connection is realized. Therefore, the risk of cracking of the brazing structure is liable to occur.
CN113752403a discloses a silicon carbide target assembly and a preparation method thereof, which adopts indium solder to weld the silicon carbide target and the back plate, but the adopted indium solder has low welding strength, and the welding combination rate has large fluctuation, and the target has the risk of desoldering during sputtering.
CN110756937a discloses a method for brazing a target and a back plate, the method comprises the steps of preprocessing the target and the back plate, then paving solder, heating to melt the solder, then cold pressing to obtain a semi-finished target component, and then machining to obtain the target component. The method is not suitable for large-area silicon carbide targets, the welding strength and welding combination rate of the silicon carbide targets are not high, the deformation of the welded product is large, and the welding is unstable.
Therefore, the welding method capable of effectively improving the welding combination rate and the welding strength of the silicon carbide target material has important significance.
Disclosure of Invention
Compared with the prior art, the welding method provided by the invention can effectively improve the welding strength and the welding combination rate of the silicon carbide target, avoid the oxidation of welding flux during welding and avoid the deformation of a welded product.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
the invention provides a welding method of a silicon carbide target, which comprises the following steps:
(1) Pretreating the target blank and the backboard to obtain a pretreated target; the target blank is made of silicon carbide;
(2) And (3) carrying out vacuum brazing treatment on the pretreated target material obtained in the step (1), wherein the welding flux subjected to the vacuum brazing treatment is a silver-based welding lug, and the silicon carbide target material is obtained.
The method comprises the steps of preprocessing the silicon carbide target blank and the backboard, and then adopting silver-based solder to perform vacuum brazing treatment on the preprocessed target material. The silicon carbide target material has larger brittleness and poor wettability with metal, so that the welding difficulty of the silicon carbide target material is extremely high.
Preferably, the pretreatment of step (1) comprises sequentially performing machining, cleaning treatment, assembly and vacuum packaging.
In the invention, the assembled target material is vacuum packed, the welding surface oxidation is prevented from influencing the welding, the drying agent is required to be prevented in the packaging film, and the assembly time and the welding time interval are less than or equal to 3 days.
Preferably, the flatness of the machined target blank is < 0.2mm, and may be, for example, 0.19mm, 0.18mm, 0.17mm, 0.16mm, 0.15mm, 0.14mm, 0.13mm, 0.12mm, 0.11mm or 0.10mm, although not limited to the recited values, other non-recited values within the numerical range are equally applicable.
Preferably, the flatness of the back plate after machining is less than 0.2mm, for example, 0.19mm, 0.18mm, 0.17mm, 0.16mm, 0.15mm, 0.14mm, 0.13mm, 0.12mm, 0.11mm or 0.10mm, but not limited to the recited values, and other non-recited values within the numerical range are equally applicable.
The invention preferably controls the planeness of the target blank and the backboard in a specific range after machining, can prevent the target material from deforming, and improves the welding strength and the welding combination rate.
Preferably, the cleaning process includes a primary cleaning and a secondary cleaning performed sequentially.
The invention preferably carries out cleaning treatment, can prevent the target from deforming, and improves the welding strength and the welding combination rate.
Preferably, the one-time wash lotion comprises acetone.
Preferably, the time of the one-time washing is 3-15min, for example, 3min, 4min, 6min, 8min, 10min, 12min, 14min or 15min, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the secondary cleaning lotion comprises isopropyl alcohol.
Preferably, the time of the secondary cleaning is 10-30min, for example, 10min, 12min, 14min, 16min, 18min, 20min, 22min, 24min, 26min, 28min or 30min, but not limited to the recited values, and other non-recited values in the numerical range are equally applicable.
Preferably, the assembling comprises placing the silver-based solder tabs and the target blank in sequence into a soldering bath of the backing plate.
Preferably, the silver-based tab in step (2) contains Ag and Cu.
Preferably, the silver-based soldering lug has a silver content of 70-80% by mass, for example, 70%, 72%, 74%, 76%, 78% or 80%, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the thickness of the silver-based tab is 0.02-0.1mm, which may be, for example, 0.02mm, 0.04mm, 0.06mm, 0.08mm, or 0.1mm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the vacuum brazing treatment in the step (2) is preceded by a vacuum pumping treatment.
The final vacuum degree of the vacuuming treatment is preferably 1×10 -2-6×10-2 Pa, for example, 1×10 - 2Pa、2×10-2Pa、3×10-2Pa、4×10-2Pa、5×10-2 Pa or 6×10 -2 Pa, but not limited to the values listed, and other values not listed in the numerical range are equally applicable.
Preferably, the vacuum brazing process is performed in a vacuum brazing furnace.
Preferably, the target blank of the pretreatment target is upwards and horizontally placed in a graphite tray of a vacuum brazing furnace.
Preferably, the flatness of the graphite tray is less than or equal to 0.5mm, for example, 0.5mm, 0.4mm, 0.3mm, 0.2mm or 0.1mm, but the flatness is not limited to the recited values, and other non-recited values in the numerical range are equally applicable.
The invention preferably controls the planeness of the graphite tray in a specific range, can prevent the target from deforming, and improves the welding strength and the welding combination rate.
Preferably, ceramic blocks are uniformly placed on the target blank of the pretreatment target material at equal height.
Preferably, the mass of the ceramic block is 20-50kg, for example, 20kg, 22kg, 24kg, 26kg, 28kg, 30kg, 32kg, 34kg, 36kg, 38kg, 40kg, 42kg, 44kg, 46kg, 48kg or 50kg, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The invention preferably controls the quality of the ceramic block in a specific range, can prevent the target from deforming, and improves the welding strength and the welding combination rate.
Preferably, the vacuum brazing process of step (2) includes a preheating process, a welding process, and a cooling process, which are sequentially performed.
Preferably, the heating rate of the preheating treatment in the step (2) is 4-9 ℃/min, for example, may be 4 ℃/min, 5 ℃/min, 6 ℃/min, 7 ℃/min, 8 ℃/min or 9 ℃/min, but is not limited to the recited values, and other non-recited values in the numerical range are equally applicable.
The end temperature of the preheating treatment is preferably 500 to 600 ℃, and may be 500 ℃, 510 ℃, 520 ℃, 530 ℃, 540 ℃, 550 ℃, 560 ℃, 570 ℃, 580 ℃, 590 ℃, or 600 ℃, for example, but is not limited to the values recited, and other values not recited in the numerical range are equally applicable.
Preferably, the heat preservation time of the preheating treatment in the step (2) is 40-60min, for example, 40min, 42min, 45min, 48min, 50min, 52min, 55min, 58min or 60min, but the method is not limited to the listed values, and other non-listed values in the numerical range are equally applicable.
Preferably, the temperature rising rate of the welding treatment in the step (2) is 2-6 ℃/min, for example, 2 ℃/min, 3 ℃/min, 4 ℃/min, 5 ℃/min or 6 ℃/min, but is not limited to the recited values, and other non-recited values in the numerical range are equally applicable.
The end temperature of the welding treatment is preferably 820 to 920 ℃, and may be 820 ℃, 830 ℃, 840 ℃, 850 ℃, 860 ℃, 870 ℃, 880 ℃, 890 ℃, 900 ℃, 910 ℃, or 920 ℃, for example, but is not limited to the values recited, and other values not recited in the numerical range are equally applicable.
Preferably, the heat preservation time of the welding treatment is 10-50min, for example, 10min, 15min, 20min, 25min, 30min, 35min, 40min, 45min or 50min, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the cooling rate of the cooling treatment in the step (2) is 1-5 ℃/min, for example, 1 ℃/min, 2 ℃/min, 3 ℃/min, 4 ℃/min or 5 ℃/min, but is not limited to the recited values, and other values not recited in the numerical range are equally applicable.
The invention preferably controls the cooling rate of the cooling treatment within a specific range, can prevent the target from deforming and improves the welding strength and the welding combination rate.
The final temperature of the cooling treatment is preferably 180 to 200 ℃, and may be 180 ℃, 182 ℃, 184 ℃, 186 ℃, 188 ℃, 190 ℃, 192 ℃, 194 ℃, 196 ℃, 198 ℃, or 200 ℃, for example, but the final temperature is not limited to the above-mentioned values, and other values not mentioned in the numerical range are equally applicable.
As a preferred technical solution of the present invention, the welding method includes the steps of:
(1) Sequentially machining the target blank and the backboard, wherein the flatness of the target blank after machining is less than 0.2mm, the flatness of the backboard after machining is less than 0.2mm, then cleaning for 3-15min by adopting acetone, cleaning for 10-30min by adopting isopropanol, and then sequentially placing a silver-based soldering lug and the target blank into a soldering bath of the backboard and carrying out vacuum packaging to obtain a pretreated target; the target blank is made of silicon carbide;
(2) Vacuumizing the pretreated target material obtained in the step (1) until the final vacuum degree is 1 multiplied by 10 -2-6×10-2 Pa, then placing the target blank of the pretreated target material upwards and horizontally in a graphite tray of a vacuum brazing furnace, wherein the flatness of the graphite tray is less than or equal to 0.5mm, uniformly placing ceramic blocks on the target blank of the pretreated target material at equal height, wherein the mass of the ceramic blocks is 20-50kg, and then performing vacuum brazing treatment by taking a silver-based soldering lug as a solder, wherein the silver-based soldering lug contains Ag and Cu; the mass percentage of silver in the silver-based soldering lug is 70-80%; the thickness of the silver-based soldering lug is 0.02-0.1mm; the vacuum brazing treatment comprises the steps of firstly reaching 500-600 ℃ at a heating rate of 4-9 ℃/min and preserving heat for 40-60min; then the temperature reaches 820-920 ℃ at the heating rate of 2-6 ℃/min and is kept for 10-50min; and finally, cooling to 180-200 ℃ at a cooling rate of 1-5 ℃/min to obtain the silicon carbide target.
Compared with the prior art, the invention has the following beneficial effects:
The welding method provided by the invention can effectively improve the welding strength and the welding combination rate of the silicon carbide target, and under the better condition, the welding combination rate of the obtained target can reach more than 97%, the welding strength can reach more than 67MPa, the deformation of the target after welding is prevented, and the production efficiency is improved.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
Example 1
The embodiment provides a welding method of a silicon carbide target, which comprises the following steps:
(1) Sequentially machining the target blank and the backboard, wherein the flatness of the target blank after machining is 0.15mm, the flatness of the backboard after machining is 0.15mm, then cleaning for 9min by adopting acetone, cleaning for 20min by adopting isopropanol, and then sequentially placing the silver-based soldering lug and the target blank into a soldering groove of the backboard and carrying out vacuum packaging to obtain a pretreated target; the target blank is made of silicon carbide;
(2) Vacuumizing the pretreated target material obtained in the step (1) until the final vacuum degree is 13 multiplied by 10 - 2 Pa, then placing the target blank of the pretreated target material upwards and horizontally in a graphite tray of a vacuum brazing furnace, wherein the flatness of the graphite tray is 0.2mm, uniformly placing ceramic blocks with the same height on the target blank of the pretreated target material, wherein the mass of the ceramic blocks is 35kg, and then performing vacuum brazing treatment by taking silver-based soldering lugs as solders, wherein the silver-based soldering lugs contain Ag and Cu; the mass percentage of silver in the silver-based soldering lug is 75%; the thickness of the silver-based soldering lug is 0.03mm; the vacuum brazing treatment comprises the steps of firstly reaching 550 ℃ at a heating rate of 6.5 ℃/min and preserving heat for 50min; then the temperature rise rate of 4 ℃/min reaches 870 ℃ and the temperature is kept for 30min; and finally, cooling to 190 ℃ at a cooling rate of 3 ℃/min to obtain the silicon carbide target.
Example 2
The embodiment provides a welding method of a silicon carbide target, which comprises the following steps:
(1) Sequentially machining the target blank and the backboard, wherein the flatness of the target blank after machining is 0.18mm, the flatness of the backboard after machining is 0.18mm, then cleaning for 3min by adopting acetone, cleaning for 30min by adopting isopropanol, and then sequentially placing the silver-based soldering lug and the target blank into a soldering groove of the backboard and carrying out vacuum packaging to obtain a pretreated target; the target blank is made of silicon carbide;
(2) Vacuumizing the pretreated target material obtained in the step (1) until the final vacuum degree is 11 multiplied by 10 - 2 Pa, then placing the target blank of the pretreated target material upwards and horizontally in a graphite tray of a vacuum brazing furnace, wherein the flatness of the graphite tray is 0.3mm, uniformly placing ceramic blocks with the same height on the target blank of the pretreated target material, wherein the mass of the ceramic blocks is 20kg, and then performing vacuum brazing treatment by taking silver-based soldering lugs as solders, wherein the silver-based soldering lugs contain Ag and Cu; the mass percentage of silver in the silver-based soldering lug is 80%; the thickness of the silver-based soldering lug is 0.02mm; the vacuum brazing treatment comprises the steps of firstly reaching 500 ℃ at a heating rate of 9 ℃/min and preserving heat for 60min; then the temperature reaches 920 ℃ at a heating rate of 2 ℃/min and is kept for 10min; and finally, cooling to 180 ℃ at a cooling rate of 5 ℃/min to obtain the silicon carbide target.
Example 3
The embodiment provides a welding method of a silicon carbide target, which comprises the following steps:
(1) Sequentially machining the target blank and the backboard, wherein the flatness of the target blank after machining is 0.17mm, the flatness of the backboard after machining is 0.17mm, then cleaning for 15min by adopting acetone, cleaning for 10min by adopting isopropanol, and then sequentially placing the silver-based soldering lug and the target blank into a soldering groove of the backboard and carrying out vacuum packaging to obtain a pretreated target; the target blank is made of silicon carbide;
(2) Vacuumizing the pretreated target material obtained in the step (1) until the final vacuum degree is 16 multiplied by 10 - 2 Pa, then placing the target blank of the pretreated target material upwards and horizontally in a graphite tray of a vacuum brazing furnace, wherein the flatness of the graphite tray is 0.4mm, uniformly placing ceramic blocks with the same height on the target blank of the pretreated target material, wherein the mass of the ceramic blocks is 50kg, and then performing vacuum brazing treatment by taking silver-based soldering lugs as solders, wherein the silver-based soldering lugs contain Ag and Cu; the mass percentage of silver in the silver-based soldering lug is 70%; the thickness of the silver-based soldering lug is 0.1mm; the vacuum brazing treatment comprises the steps of firstly reaching 600 ℃ at a heating rate of 4 ℃/min and preserving heat for 40min; then the temperature reaches 820 ℃ at a heating rate of 6 ℃/min and is kept for 50min; and finally, cooling to 200 ℃ at a cooling rate of 1 ℃/min to obtain the silicon carbide target.
Example 4
This example provides a method for welding a silicon carbide target, which differs from example 1 only in that the flatness of the target blank and the flatness of the backing plate after machining in step (1) are both 0.5mm.
Example 5
This example provides a method of welding a silicon carbide target, which differs from example 1 only in that the cleaning treatment of step (1) is not performed.
Example 6
This example provides a method for welding silicon carbide targets, which differs from example 1 only in that the flatness of the graphite tray in step (2) is 0.7mm.
Example 7
This example provides a method for welding a silicon carbide target, which differs from example 1 only in that the mass of the ceramic block in step (2) is 10kg.
Example 8
This example provides a method for welding a silicon carbide target, which differs from example 1 only in that the mass of the ceramic block in step (2) is 60kg.
Example 9
The difference between the welding method of the silicon carbide target material provided in this embodiment and that of embodiment 1 is that the cooling rate of the cooling treatment in step (2) is 0.5 ℃/min.
Example 10
The difference between the welding method of the silicon carbide target material provided in this embodiment and that of embodiment 1 is that the cooling rate of the cooling treatment in step (2) is 10 ℃/min.
Comparative example 1
This comparative example provides a method of soldering a silicon carbide target, which differs from example 1 only in that the silver-based tab of step (2) is replaced with pure indium solder.
The weld joint ratios of the silicon carbide targets welded in examples 1 to 10 and comparative example 1 were measured by using a C-type ultrasonic flaw detector, and the results are shown in Table 1.
The weld strength of the silicon carbide targets welded in examples 1 to 10 and comparative example 1 was measured by using a weld strength tester, and the results are shown in table 1.
TABLE 1
| Solder joint rate/% | Weld Strength/MPa | |
| Example 1 | 99 | 70 |
| Example 2 | 98 | 68 |
| Example 3 | 97 | 67 |
| Example 4 | 92 | 44 |
| Example 5 | 68 | 19 |
| Example 6 | 90 | 35 |
| Example 7 | 91 | 37 |
| Example 8 | 85 | 50 |
| Example 9 | 97 | 68 |
| Example 10 | 80 | 53 |
| Comparative example 1 | 89 | 10 |
From table 1, the following points can be seen:
(1) As can be seen from the data of examples 1-10, the welding method of the silicon carbide target material provided by the invention can achieve a welding combination rate of more than 97% and a welding strength of more than 67MPa under a better condition.
(2) As can be seen from a combination of the data of example 1 and example 4, the flatness of the target blank and the flatness of the backing plate after machining in example 1 were both 0.15mm, and the welding bonding rate and the welding strength of the target material in example 1 were both higher than those in example 4, compared to 0.5mm in example 4, thus showing that the invention can improve the welding strength and the welding machine bonding rate of the target material by preferably controlling the flatness of the target blank and the flatness of the backing plate after machining.
(3) As can be seen from a combination of the data of example 1 and example 5, example 5 differs from example 1 only in that the cleaning treatment of step (1) is not performed, and the welding bonding rate and welding strength of the target material in example 1 are both higher than those of example 5, thus indicating that the cleaning treatment is preferably performed in the present invention, and the welding strength and welding bonding rate of the target material can be improved.
(4) As can be seen from a combination of the data of example 1 and example 6, example 6 differs from example 1 only in that the flatness of the graphite pallet in step (2) is 0.7mm, and the welding bonding rate and welding strength in example 1 are both higher than those in example 6, thus indicating that the welding strength and welding machine bonding rate of the target can be improved by preferably controlling the flatness of the graphite pallet according to the present invention.
(5) As can be seen from a combination of the data of examples 1 and examples 7 to 8, the mass of the ceramic block in example 1 was 35kg, and the welding rate and the welding strength in example 1 were both higher than those in examples 7 to 8, compared to only 10kg and 60kg in examples 7 to 8, respectively, thus indicating that the invention preferably controls the mass of the ceramic block, and can improve the welding strength and the welding machine bonding rate of the target.
(6) As can be seen from a combination of the data of examples 1 and examples 9 to 10, the cooling rate of the cooling treatment in example 1 was 3 ℃/min, and the welding bonding rate and the welding strength in example 1 were both higher than those in examples 9 to 10, compared to only 0.5 ℃/min and 10 ℃/min in examples 9 to 10, respectively, thus indicating that the welding strength and the welding bonding rate of the target material can be improved by preferably controlling the cooling rate of the cooling treatment.
(7) As can be seen from the data of comparative example 1 and comparative example 1, the comparative example 1 is different from example 1 only in that the silver-based tab described in step (2) is replaced with pure indium solder, and the soldering bonding rate and soldering strength of the target material in example 1 are both higher than those of comparative example 1, thus indicating that the soldering strength and bonding rate of the welder of the target material can be improved by adopting the combined operation of steps (1) and (2) in combination with the silver-based tab.
In conclusion, the welding method provided by the invention can effectively improve the welding strength and the welding combination rate of the silicon carbide target, prevent the target from deforming after welding, and improve the production efficiency.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.
Claims (15)
1. A method of welding a silicon carbide target, the method comprising the steps of:
(1) Pretreating the target blank and the backboard to obtain a pretreated target; the target blank is made of silicon carbide;
the pretreatment comprises machining, cleaning, assembling and vacuum packaging which are sequentially carried out;
the flatness of the machined target blank is less than 0.2mm;
the flatness of the back plate after machining is less than 0.2mm;
(2) Carrying out vacuum brazing treatment on the pretreated target material obtained in the step (1), wherein the welding flux subjected to the vacuum brazing treatment is a silver-based welding lug, and obtaining the silicon carbide target material;
The target blank of the pretreatment target is upwards and horizontally placed in a graphite tray of a vacuum brazing furnace, the flatness of the graphite tray is less than or equal to 0.5mm, ceramic blocks are uniformly placed on the target blank of the pretreatment target at equal height, and the mass of the ceramic blocks is 20-50kg;
the vacuum brazing treatment comprises a preheating treatment, a welding treatment and a cooling treatment which are sequentially carried out;
the heating rate of the preheating treatment is 4-9 ℃/min;
the end temperature of the preheating treatment is 500-600 ℃;
the heat preservation time of the preheating treatment is 40-60min;
the end temperature of the welding treatment is 820-920 ℃;
The cooling rate of the cooling treatment is 1-5 ℃/min;
the final temperature of the cooling treatment is 180-200 ℃.
2. The welding method according to claim 1, wherein the cleaning treatment of step (1) includes a primary cleaning and a secondary cleaning performed in sequence.
3. The welding method of claim 2, wherein the one-time rinse of step (1) comprises acetone.
4. The welding method according to claim 2, wherein the time of the one washing in the step (1) is 3 to 15 minutes.
5. The welding method of claim 2, wherein the secondary cleaning lotion of step (1) comprises isopropyl alcohol.
6. The welding method according to claim 2, wherein the time of the secondary cleaning in step (1) is 10 to 30 minutes.
7. The bonding method according to claim 1, wherein the assembling comprises sequentially placing the silver-based bonding pads and the target blank into the bonding groove of the backing plate in step (1).
8. The soldering method according to claim 1, wherein the silver-based tab of step (2) contains Ag and Cu.
9. The welding method according to claim 1, wherein the silver-based lug has a silver content of 70 to 80% by mass.
10. The welding method according to claim 1, wherein the silver-based lug has a thickness of 0.02-0.1mm.
11. The welding method according to claim 1, wherein the vacuum brazing process of step (2) is preceded by a vacuum-pumping process.
12. The welding method as defined in claim 11, wherein said end point vacuum of said vacuuming treatment is。
13. The welding method according to claim 1, wherein the vacuum brazing process is performed in a vacuum brazing furnace.
14. The welding method according to claim 1, wherein the temperature rise rate of the welding process of step (2) is 2-6 ℃/min.
15. The welding method according to claim 1, wherein the heat-retaining time of the welding process is 10 to 50 minutes.
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