CN114707332B - A method for calculating the average power capacity of dielectric integrated suspension lines - Google Patents
A method for calculating the average power capacity of dielectric integrated suspension lines Download PDFInfo
- Publication number
- CN114707332B CN114707332B CN202210359213.8A CN202210359213A CN114707332B CN 114707332 B CN114707332 B CN 114707332B CN 202210359213 A CN202210359213 A CN 202210359213A CN 114707332 B CN114707332 B CN 114707332B
- Authority
- CN
- China
- Prior art keywords
- sisl
- transmission line
- calculating
- air
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/11—Complex mathematical operations for solving equations, e.g. nonlinear equations, general mathematical optimization problems
- G06F17/12—Simultaneous equations, e.g. systems of linear equations
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2111/00—Details relating to CAD techniques
- G06F2111/10—Numerical modelling
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/08—Thermal analysis or thermal optimisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Mathematical Optimization (AREA)
- Computational Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Pure & Applied Mathematics (AREA)
- Mathematical Analysis (AREA)
- General Engineering & Computer Science (AREA)
- Software Systems (AREA)
- Algebra (AREA)
- Databases & Information Systems (AREA)
- Operations Research (AREA)
- Probability & Statistics with Applications (AREA)
- Evolutionary Biology (AREA)
- Bioinformatics & Computational Biology (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
本发明公开一种计算介质集成悬置线平均功率容量的方法，通过热传递分析，实现SISL表面温度与输入功率之间对应关系的计算；通过将热流场类比与静电场，建立SISL的平行板热模型用于内部传热分析；通过数值建模和热传递分析，实现SISL在复合媒质传热情况下内部最高温度与输入功率之间对应关系的计算，从而实现SISL传输线的平均功率容量的快速计算。本发明提供了快速计算SISL传输线平均功率容量的方法，在采用SISL传输线进行电路设计的时候，可以快速估计出它所能承受的最大连续波功率，在利用SISL平台设计大功率电路时具有重要参考意义。
The present invention discloses a method for calculating the average power capacity of a dielectric integrated suspension line. The corresponding relationship between the surface temperature of the SISL and the input power is calculated by heat transfer analysis. The parallel plate thermal model of the SISL is established for internal heat transfer analysis by analogy of the heat flow field with the electrostatic field. The corresponding relationship between the internal maximum temperature and the input power of the SISL under the condition of composite medium heat transfer is calculated by numerical modeling and heat transfer analysis, thereby realizing the rapid calculation of the average power capacity of the SISL transmission line. The present invention provides a method for rapidly calculating the average power capacity of the SISL transmission line. When the SISL transmission line is used for circuit design, the maximum continuous wave power that it can withstand can be rapidly estimated, which has important reference significance when designing high-power circuits using the SISL platform.
Description
Technical Field
The invention relates to the technical field of medium integrated suspension wires, in particular to a method for calculating average power capacity of a medium integrated suspension wire.
Background
Transmission lines are the most fundamental components of microwave and millimeter wave circuits and systems. Transmission lines are commonly used in a distinction between planar and non-planar configurations. The planar transmission line mainly comprises microstrip lines, coplanar waveguides, slot lines and the like, and has the advantages of easy realization of integration of circuits, devices and the like, high loss and low average power capacity. The transmission line with a non-planar structure mainly comprises a metal waveguide and a coaxial line, and has the advantages of large power capacity, high quality factor, large size and difficult integration with other circuits and devices.
Substrate Integrated Waveguide (SIW) has received much attention in recent years, and its electric field is distributed in dielectric so that loss is large, severely affecting average power capacity, and although aerated SIW significantly reduces dielectric loss, it still has a disadvantage of not being integrated with active devices.
Dielectric integrated suspension wires (SISL) have realized many high performance rf microwave circuits on them because of their low loss, low cost, self-packaging, easy integration with other transmission lines and devices. In high power circuit designs, temperature characteristics are a factor that should be considered in addition to transmission characteristics. When the circuit is transmitting continuous waves, if the applied continuous wave power exceeds the allowable limit, the temperature rise caused by the loss will cause the substrate material characteristics to change, affecting the circuit performance, and this allowable power limit is the average power capacity of SISL.
SISL is similar to SIW in terms of heat transfer properties of the outer surface, which can also be considered isothermal in cross section in the direction of transport, but there is a significant gradient in temperature inside SISL, unlike the thermally uniform thermal model in the SIW cross section. Furthermore, compared to microstrip lines, which are also two-conductor transmission lines, the thermal model of microstrip lines is also not applicable to SISL transmission lines, since SISL is a composite structure of dielectric, metal and cavities. Since SISL has good performance, it has many applications with excellent performance in terms of high power, but there is no discussion about the analysis of SISL average power capacity, in order to ensure stable operation of SISL high power circuits, a method capable of analyzing and calculating SISL average power capacity is urgently needed for guiding SISL power considerations in transmission line design.
Disclosure of Invention
It is an object of the present invention to address the technical deficiencies of the prior art by providing a method for calculating the average power capacity of a dielectric integrated suspension line for guiding SISL a transmission line design based on power considerations.
The technical scheme adopted for realizing the purpose of the invention is as follows:
a method of calculating an average power capacity of a media integrated suspension line, comprising:
s1, obtaining an attenuation constant of a SISL transmission line through simulation, and calculating a first expression of heat flow phi gen generated in the SISL transmission line, wherein phi gen = -delta P, delta P represents the power variation of the length delta z of the SISL transmission line, delta P= -2 alpha P delta z, P=P 0e-2αz, alpha is a power flow function in the transmission direction (z direction) of the consumable transmission line through simulation of a full-wave simulator, P 0 represents input power, and the corresponding coordinate z=0;
s2, calculating and SISL a relation between the outer surface temperature T s of the transmission line and the heat flow phi gen, and obtaining a second expression of the heat flow phi gen:
Wherein n and m are the number of surface layers associated with convection and radiation boundaries, respectively, h c,i is the heat transfer coefficient, A i is the surface area associated with convection, A j is the surface area associated with radiation, the surface area A i and A j over the length of Δz on the SISL transmission line are calculated as the product of the width or height of the SISL transmission line and Δz, wherein the area of the upper and lower horizontal surfaces is the product of the width and Δz, the area of the left and right vertical surfaces is the product of the height and Δz, σ is the blackbody radiation constant, ζ is the emissivity of the surface layer associated with radiation, T ∞ is the ambient temperature, where AndThe upper scale of (2) is the power of 4;
S3, calculating the relation between the highest temperature T w in the SISL transmission line and the heat flow phi gen to obtain a third expression of the heat flow phi gen
Wherein Φ cond denotes that K air is the thermal conductivity of air, W e Δz is the area of thermal conduction, W e denotes that the width of the SISL transmission line equivalent to the width of the parallel plate thermal model after being widened by the influence of the substrate supporting the signal line, h=b/2, b is the total height of the upper and lower cavities,Representing total radiation heat exchange quantity in the upper cavity and the lower cavity, wherein ζ c is emissivity of a signal wire, ζ d is emissivity of a medium, ζ in is emissivity of materials on the upper surface of the bottom PCB and the lower surface of the top PCB, F 12 is view angle factor from a circuit layer to a corresponding cover plate, w air represents cavity width in the transmission wire, w is width of the signal wire, whereinAndThe upper scale of (2) is the power of 4;
s4, calculating SISL the average power capacity of the transmission line
Two equations related to the input power P 0 and the external surface temperature T s of the SISL transmission line are obtained through simultaneous equations of the first expression, the second expression and the third expression of the heat flow phi gen, the two obtained equations form an equation set, the corresponding input power P 0 when the highest temperature inside SISL reaches the glass-state softening temperature T g of the medium is obtained through solving the equation set, and the input power P 0 is the average power capacity of the SISL transmission line.
The method of the invention realizes the calculation of the corresponding relation between SISL surface temperature and input power through heat transfer analysis, establishes SISL parallel plate thermal model for internal heat transfer analysis through analogy of heat flow field and electrostatic field, realizes the calculation of the corresponding relation between the internal highest temperature and input power of SISL under the condition of composite medium heat transfer through numerical modeling and heat transfer analysis, and can realize the rapid calculation of the average power capacity of SISL transmission lines.
The invention provides a method for rapidly calculating SISL average power capacity of a transmission line, which can rapidly estimate the maximum continuous wave power which can be born when the SISL transmission line is adopted for circuit design and has important reference significance when a SISL platform is utilized for designing a high-power circuit.
Drawings
FIG. 1 is a three-dimensional schematic of SISL;
FIG. 2 is a schematic cross-sectional view SISL;
FIG. 3 is a schematic diagram of a cross section of air-filled SISL and its electrostatic field and heat flow field;
FIG. 4 is a schematic diagram of an equivalent parallel plate thermal model of air-packing SISL;
FIG. 5 is an S-parameter plot of SISL transmission lines;
FIG. 6 is a plot of the decay constant of SISL transmission lines;
fig. 7 is a temperature cloud of SISL.
Detailed Description
The invention is described in further detail below with reference to the drawings and the specific examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, in the method for calculating SISL the average power capacity of the transmission line according to the embodiment of the present invention, the average power capacity of the SISL transmission line can be quickly calculated. The method comprises the following specific steps:
Step one, obtaining the attenuation constant of SISL transmission lines through simulation, and calculating the heat flow generated in SISL transmission lines.
The attenuation constant alpha of the uniform SISL transmission line is obtained through simulation of a full-wave simulator, and when the input power is P 0, the power of the SISL transmission line at the position with the length z is reduced as follows:
P=P0e-2αz (1)
The amount of power change over the length Δz of SISL transmission line is:
ΔP=-2αPΔz (2)
the heat flow Φ gen generated in SISL transmission lines is therefore:
Φgen=-ΔP (3)
And step two, calculating SISL the relation between the outer surface temperature T s of the transmission line and the heat flow phi gen.
Heat dissipation of SISL transmission lines includes convection and radiation, and the self-packaging of SISL transmission lines is approximately isothermal due to the presence of copper cladding and a large number of metallized vias.
The heat exchange coefficient h c of the convective heat exchange has the following calculation formula:
1) Coefficient of heat transfer with hot side facing horizontally up
2) Heat transfer coefficient with heat face down
3) Heat transfer coefficient with vertical hot face
Wherein, T ∞ is the ambient temperature, w box is the width of the SISL self-packaging, and h box is the height of the SISL self-packaging. The temperature T s of the outer surface of SISL transmission line is related to the heat flow Φ gen as follows:
wherein n and m are the number of surface layers related to convection and radiation boundaries, h c,i is a heat exchange coefficient, a i is a surface layer area related to convection, a j is a surface layer area related to radiation, the surface layer areas a i and a j over the Δz length on the SISL transmission line are calculated as the product of the width or height of the SISL transmission line and Δz, wherein the area of the upper and lower horizontal surfaces is the product of the width and Δz, the area of the left and right vertical surfaces is the product of the height and Δz, σ is a blackbody radiation constant, ζ is the emissivity of the surface layer related to radiation, T ∞ is the ambient temperature, and the formulae T s and T ∞ are marked to the power of 4;
And thirdly, calculating SISL the relation between the internal highest temperature T w of the transmission line and the heat flow phi gen.
SISL are mainly located in the signal wire and the supporting medium around the signal wire, and the heat converted by the partial loss is transferred to the outer surface through the composite medium formed by the upper cavity, the lower cavity and the supporting medium of the signal wire. Typically SISL the cavity height is insufficient to produce convective heat transfer, and the internal heat transfer is only by conduction and radiation, both paths being in parallel.
When SISL is filled with air, the thermal flow field can be analogically compared with the electrostatic field, and in order to accurately calculate the area of heat conduction outwards from the signal line and the supporting medium around the signal line, SISL is equivalent to a parallel plate thermal model according to the principle that the thermal flow field is analogically compared with the electrostatic field, and the thermal flow field width calculation formula is as follows:
Wherein h=b/2, b is the total height of the upper and lower cavities, Is the characteristic impedance of the air-filled SISL. When SISL is configured to meet the stripline range,Can be approximated by the following equation
1) When w/(b-t) is not more than 0.35, t/b is not more than 0.25, and d ' '/d ' is not more than 0.11:
2) When w/(b-t) is more than or equal to 0.35 and t/b is less than or equal to 0.25:
where t is the signal line thickness, d″ is the small one of w and t, and d' is the large one of w and t.
Since the thermal conductivity of the substrate under the signal line is much higher than that of air, the calculated width W e of the parallel plate thermal model is widened to two sides under the condition of only air filling, and the widened width is related to the cavity height h air, the cavity width W air, the thermal conductivity K sub of the substrate supporting the signal line, the line width W of the signal line and the thickness h sub of the substrate supporting the signal line, the invention provides fitting the multiple lambda of the widened width W e of the parallel plate thermal model of the air filling SISL through numerical modeling, and the width of the parallel plate model influenced by the substrate supporting the signal line is W e＝λ·we.
A large amount of data of the corresponding relation between the input power of SISL and the internal highest temperature is simulated as a sample through thermal simulation software, and a mathematical model is adopted to fit a widened and widened multiple lambda of the width w e of the parallel plate thermal model of the air filling SISL transmission line, wherein lambda is related to the cavity height h air, the cavity width w air, the substrate thermal conductivity K sub for supporting the signal line, the line width w of the signal line and the substrate thickness h sub for supporting the signal line.
Wherein the heat transfer heat can be calculated by the following formula:
Where K air is the thermal conductivity of air and W e Δz is the area of thermal conduction.
The total radiant heat exchange in the upper and lower cavities can be approximated by the following equation:
Xi c is the emissivity of the signal wire, xi d is the emissivity of the medium, xi in is the emissivity of the material on the upper surface of the bottom PCB and the material on the lower surface of the top PCB, F 12 is the visual angle factor from the circuit layer to the corresponding cover plate, and the calculation formula is that
Finally, the energy conservation includes:
And step four, calculating SISL average power capacity.
Substituting equations (3) - (6) into equation (7) yields an equation for input power and surface temperature:
Substituting the formulas (3) and (8) - (15) into the formula (16) to obtain a second equation about the input power and the surface temperature, wherein the obtained two equations form an equation set, and the corresponding input power when the highest temperature in SISL reaches the glass-state softening temperature T g of the medium can be obtained by solving the equation set, and the input power is the average power capacity of SISL.
The average power calculation method of the transmission line can be realized by a computer program realizing processing model, corresponding parameters are input into the model, then corresponding results are output by the model, the change of the transmitted temperature is realized by changing the input power, and when the highest temperature in SISL reaches the glass-state softening temperature T g of the medium, the corresponding input power, namely the average power capacity of SISL. Therefore, when the SISL transmission line is adopted for circuit design, the maximum continuous wave power which can be born by the circuit can be rapidly estimated, so that the instruction on circuit design is realized, the designed circuit meets the corresponding power requirement, and the circuit has important reference significance when the SISL platform is used for designing a high-power circuit.
In the following, a section of SISL transmission line operating at 3GHz is taken as an example, and its maximum transmission power is calculated. The S parameters are shown in fig. 5. The plates constituting SISL transmission lines all use FR4, the relative dielectric constant epsilon r =4.4, and tan delta=0.02. The glass transition temperature of conventional FR4 is 140 ℃, and thus the ultimate operating temperature of SISL transmission lines is 140 ℃. The thickness of the five layers of plates is 0.3mm, 0.6mm, 0.127mm, 0.6mm and 0.3mm, and the copper thickness is 0.035mm. The working environment is room temperature T ∞ =22℃.
SISL the transmission line was packaged from width W box =20 mm, height h box = 1.997mm, cavity width W air =10 mm, cavity height h air =0.6 mm, b=1.397 mm, signal line width w=1.75 mm, thermal conductivities of fr4 and copper are 0.294W/(m· ℃ and 400W/(m· ℃ respectively), emissivity is 0.9 and 0.1 respectively.
Step one, obtaining the attenuation constant of SISL transmission lines through simulation.
As shown in FIG. 6, the 3GHz attenuation constant is 0.186N p/m, and the heat flow rate generated by loss in the transmission line is calculated by substituting the values (2) and (3)
Φgen＝2αPΔz＝2×0.186×P0×Δz (17)
And step two, calculating SISL the relation between the outer surface temperature T s of the transmission line and the heat flow phi gen.
The ambient temperature T ∞ is 295K (22 ℃), and substituting data of formulae (4) - (6) and dimensions, materials, etc. into (7) yields:
And thirdly, calculating SISL the relation between the internal highest temperature T w of the transmission line and the heat flow phi gen.
Because SISL in the embodiment is sized to match the stripline, the characteristic impedance can be calculated as follows from equations (11), (12)
Thus, the width of the parallel plate thermal model is
Using a single formula as a model function of lambda, one expression of lambda fitted by using a plurality of groups of data of the corresponding relation between input power and maximum temperature as a sample is
The application range of the expression is that the line width W of the signal line is 0.1mm-50Ω, the cavity height h air is 0.3mm-2mm, the cavity width W air：max{4w,w+4hair } -30mm, the thickness h sub of the signal line supporting medium is 0.127mm, the thermal conductivity of the signal line supporting medium is K sub, and the range is 0.2W/(m·DEG C) -0.3W/(m·DEG C)
From this, W can be calculated e
Substituting the glass-state softening temperature T g of the medium into T w, wherein the heat flow of heat conduction is
The viewing angle factor of the heat exchange of radiation in SISL transmission lines can be calculated as
The total radiation heat exchange quantity in the upper cavity and the lower cavity is
Finally, the formulas (23) and (25) are substituted into the formula (16) to obtain
And step four, calculating SISL the average power capacity of the transmission line.
Substituting formula (17) into formula (18) to obtain
Substituting formula (17) into formula (26) to obtain
By solving the system of equations consisting of equations (27) and (28), P 0＝58.96W,Ts = 76.48 ℃,58.96W is the average power capacity of the SISL transmission line in the example.
In order to verify the accuracy of the calculation result, thermal simulation software is adopted to verify the calculation result.
Modeling simulation is carried out in a full-wave simulator, the simulation model and the result are imported into thermal simulation software, heat dissipation boundary conditions are set to be convection and radiation, and the convection heat transfer coefficients of the upper surface, the lower surface and the side surface are respectively obtained by formulas (1) - (7).
The maximum temperature of SISL is 140 ℃ by varying the input power P0. As shown in fig. 7, when SISL reaches the glass softening temperature, the input power is 64.10W, the corresponding surface temperature is 77.78 ℃, and the loss data transfer accuracy and meshing of the full wave simulator to the thermal simulation software are part of the reasons for temperature and power deviation, which are very close to the calculation results in the examples, thus proving the accuracy of the calculation method of the invention.
While the fundamental and principal features of the invention and advantages of the invention have been shown and described, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but may be embodied in other specific forms without departing from the spirit or essential characteristics thereof;
The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in detail below, and that the embodiments described in the examples may be combined as appropriate to form other embodiments that will be apparent to those skilled in the art.
Claims (7)
1. A method of calculating the average power capacity of a media integrated suspension line comprising the steps of:
S1, obtaining an attenuation constant of a SISL transmission line through simulation, and calculating a first expression of heat flow phi gen generated in the SISL transmission line, wherein phi gen = -delta P, delta P represents a power variation amount on the delta z length of the SISL transmission line, delta P= -2 alpha P delta z, P=P 0e-2αz, alpha is a uniform SISL transmission line attenuation constant obtained through simulation of a full-wave simulator, P is a power flow function in the transmission direction of the lossy transmission line, and P 0 represents input power and corresponds to a coordinate z=0;
S2, calculating SISL the relation between the outer surface temperature T s of the transmission line and the heat flow phi gen, and obtaining a second expression of the heat flow phi gen:
Wherein n and m are the number of surface layers associated with convection and radiation boundaries, respectively, h c,i is the heat transfer coefficient, A i is the surface layer area associated with convection, A j is the surface layer area associated with radiation, the surface layer areas A i and A j over the length of Δz on the SISL transmission line are calculated as the product of the width or height of the SISL transmission line and Δz, wherein the area of the upper and lower horizontal surfaces is the product of the width and Δz, the area of the left and right vertical surfaces is the product of the height and Δz, σ is the blackbody radiation constant, ζ is the emissivity of the surface layer associated with radiation, T ∞ is the ambient temperature, AndThe upper scale of (2) is the power of 4;
S3, calculating the relation between the highest temperature T w in the SISL transmission line and the heat flow phi gen to obtain a third expression of the heat flow phi gen
Where Φ cond denotes the thermal conductivity of air, K air is the thermal conductivity of air, W e Δz is the area of thermal conduction, W e denotes the width of the parallel plate thermal model affected by the substrate supporting the signal line, h=b/2, b is the total height of the upper and lower cavities,Xi c is the emissivity of the signal wire, xi d is the emissivity of the medium, xi in is the emissivity of the materials on the upper surface of the bottom PCB and the lower surface of the top PCB, F 12 is the visual angle factor from the circuit layer to the corresponding cover plate, w air is the width of the cavity in the transmission wire, and w is the line width of the signal wire;
s4, calculating SISL the average power capacity of the transmission line
Two equations related to the input power P 0 and the external surface temperature T s of the SISL transmission line are obtained through simultaneous equations of the first expression, the second expression and the third expression of the heat flow phi gen, the two obtained equations form an equation set, the corresponding input power P 0 when the highest temperature inside SISL reaches the glass-state softening temperature T g of the medium is obtained through solving the equation set, and the input power P 0 is the average power capacity of the SISL transmission line.
2. The method of calculating the average power capacity of a media integrated suspension line of claim 1, wherein h c,i is the heat transfer coefficient including the heat transfer coefficient with the hot face facing horizontally upwardHeat transfer coefficient with heat face downHeat transfer coefficient with vertical hot faceThe calculation formulas are respectively as follows:
Wherein w box is SISL width of the self-packaging of the transmission line, and h box is SISL height of the self-packaging of the transmission line.
3. The method for calculating the average power capacity of the dielectric integrated suspension line according to claim 1, wherein the width W e of the parallel plate thermal model affected by the substrate of the supported signal line is calculated by equivalent air-filling SISL transmission line as a parallel plate thermal model to calculate the width W e of the air-filling SISL parallel plate thermal model, fitting the width W e of the air-filling SISL parallel plate thermal model to a multiple λ of the widened affected by the substrate of the supported signal line by numerical modeling, and calculating by W e＝λ·we.
4. The method of calculating the average power capacity of a media integrated suspension line of claim 3, wherein the air-filled SISL parallel plate thermal model width w e is calculated as follows:
where h=b/2, b is the total height of the upper and lower cavities in SISL transmission lines, For air-filled SISL transmission lines, when SISL transmission line configuration meets the stripline range,The value is obtained from the following equation:
When w/(b-t) is less than or equal to 0.35, t/b is less than or equal to 0.25:
d 0 is an intermediate variable that can be calculated by the following formula:
when w/(b-t) is more than or equal to 0.35 and t/b is less than or equal to 0.25:
C f is fringe capacitance, which can be calculated by:
where t is the signal line thickness, d″ is the one with the smaller value in w and t, and d' is the one with the larger value in w and t.
5. The method for calculating the average power capacity of a dielectric integrated suspension line according to claim 3, wherein the expansion of the width w e of the parallel plate thermal model of air filling SISL by the substrate of the supporting signal line is performed by using a mathematical model to fit a plurality of data of the correspondence between the input power of SISL transmission lines and the maximum internal temperature as samples through thermal simulation software.
6. The method of calculating an average power capacity of a dielectric integrated suspension line of claim 3, wherein the air-filled SISL parallel plate thermal model width w e is related to the cavity height h air, the cavity width w air, the substrate thermal conductivity K sub supporting the signal line, the signal line linewidth w, and the substrate thickness h sub supporting the signal line by a factor λ that is broadened by the substrate effect of supporting the signal line.
7. The method of calculating the average power capacity of a dielectric integrated suspension line according to claim 1, wherein the viewing angle factor F 12 from the circuit layer to the corresponding cover plate is calculated as follows:
where h air denotes the transmission line cavity height.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210359213.8A CN114707332B (en) | 2022-04-07 | 2022-04-07 | A method for calculating the average power capacity of dielectric integrated suspension lines |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210359213.8A CN114707332B (en) | 2022-04-07 | 2022-04-07 | A method for calculating the average power capacity of dielectric integrated suspension lines |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114707332A CN114707332A (en) | 2022-07-05 |
| CN114707332B true CN114707332B (en) | 2025-01-21 |
Family
ID=82172331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210359213.8A Active CN114707332B (en) | 2022-04-07 | 2022-04-07 | A method for calculating the average power capacity of dielectric integrated suspension lines |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114707332B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104820740A (en) * | 2015-04-24 | 2015-08-05 | 电子科技大学 | Method for calculating transmission power of SIW (Substrate integrated waveguide) transmission line |
| CN112986692A (en) * | 2021-02-03 | 2021-06-18 | 四川大学 | Complex dielectric constant sensor based on medium integrated suspension line, measuring system and measuring method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100567887B1 (en) * | 2003-12-04 | 2006-04-04 | 엘에스전선 주식회사 | Apparatus and method for state analysis of power transmission and distribution link with real-time external passion water calculation |
| TWI256000B (en) * | 2004-12-31 | 2006-06-01 | Tatung Co | A method for analyzing temperature and fluid field on power transformers |
| JP5546270B2 (en) * | 2010-02-01 | 2014-07-09 | 三菱電機株式会社 | High frequency transmission line |
-
2022
- 2022-04-07 CN CN202210359213.8A patent/CN114707332B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104820740A (en) * | 2015-04-24 | 2015-08-05 | 电子科技大学 | Method for calculating transmission power of SIW (Substrate integrated waveguide) transmission line |
| CN112986692A (en) * | 2021-02-03 | 2021-06-18 | 四川大学 | Complex dielectric constant sensor based on medium integrated suspension line, measuring system and measuring method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114707332A (en) | 2022-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104182568B (en) | A kind of chip temperature prediction technique based on ANSYS finite element thermal analysis | |
| Pilagatti et al. | Design of additive manufactured passive heat sinks for electronics | |
| Liu et al. | Two-equation method for heat transfer efficiency in metal honeycombs: an analytical solution | |
| CN114611232B (en) | Three-dimensional thermal resistance network model and shell temperature and maximum heat dissipation power prediction method | |
| Zhang | Improved numerical-analytical thermal modeling method of the PCB with considering radiation heat transfer and calculation of components’ temperature | |
| CN105045966A (en) | Hybrid calculation method for inner temperature field of transformer | |
| CN110728083A (en) | A kind of simulation analysis method of composite conductive film, electronic device and storage medium thereof | |
| Zhang et al. | A pseudo 3D cooling heat sink model designed by multi-objective topology optimization method | |
| CN114707332B (en) | A method for calculating the average power capacity of dielectric integrated suspension lines | |
| Ernot et al. | Analytical and numerical predictions of the thermal performance of multi-layered lattice structures | |
| CN119047232A (en) | Electric heating fault analysis method for valve side sleeve of converter transformer | |
| CN220649834U (en) | Measuring system for online calibration of temperature sensor for storehouse | |
| CN104820740B (en) | A kind of method of calculating SIW transmission line power | |
| Zheng et al. | Efficient Electro-Thermal Analysis of SIW Filters Considering Temperature-Dependent Characteristics of Materials | |
| CN111709211B (en) | Layout method of high-density refined heat-conducting copper foil of high-frequency PCB | |
| Meng et al. | Analysis of electro-thermal characterization of substrate integrated suspended line | |
| Tomar et al. | Comparative study of performance of pin fin under forced convection heat transfer | |
| Ma et al. | Substrate Integrated Suspended Line | |
| CN220604332U (en) | A fin structure and constant temperature testing system to improve temperature uniformity | |
| Shilo et al. | Thermal Design of Electronic Devices with a Forced Cooling System | |
| Wilcoxon | The effects of geometry and dielectric material on stripline and microstrip internal temperatures | |
| CN119514183A (en) | A method for constructing an equivalent thermal circuit model of artificial surface plasmon transmission lines | |
| CN104179521A (en) | Heat dissipation method based on slotted box cable tunnel thermal field model | |
| CN110929417A (en) | Temperature early warning control method and device based on fireproof power capacitor thermal stability calculation | |
| CN119026346B (en) | Thermal management method for Ka-band microstrip waveguide conversion and power combining device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |