[go: up one dir, main page]

CN114678332A - ITO (indium tin oxide) patterning method, preparation method of display panel and display panel - Google Patents

ITO (indium tin oxide) patterning method, preparation method of display panel and display panel Download PDF

Info

Publication number
CN114678332A
CN114678332A CN202210283820.0A CN202210283820A CN114678332A CN 114678332 A CN114678332 A CN 114678332A CN 202210283820 A CN202210283820 A CN 202210283820A CN 114678332 A CN114678332 A CN 114678332A
Authority
CN
China
Prior art keywords
ito
area
adhesive layer
organic adhesive
screen area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210283820.0A
Other languages
Chinese (zh)
Inventor
刘达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Visionox Technology Co Ltd
Original Assignee
Hefei Visionox Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hefei Visionox Technology Co Ltd filed Critical Hefei Visionox Technology Co Ltd
Priority to CN202210283820.0A priority Critical patent/CN114678332A/en
Publication of CN114678332A publication Critical patent/CN114678332A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0231Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本申请涉及一种ITO图形化方法、显示面板的制备方法和显示面板。所述方法包括:提供一有机胶层;对所述有机胶层图形化,在所述有机胶层的上表层内开设多个彼此间隔的凹陷部;在所述有机胶层上沉积ITO材料,所述ITO材料的沉积厚度小于所述凹陷部的深度,沉积在所述上表层上的ITO材料形成第一ITO薄膜,沉积在所述凹陷部内的ITO材料形成第二ITO薄膜,所述第一ITO薄膜和所述第二ITO薄膜隔离。采用本方法能够提高产能、降低成本。

Figure 202210283820

The present application relates to an ITO patterning method, a preparation method of a display panel, and a display panel. The method includes: providing an organic adhesive layer; patterning the organic adhesive layer, opening a plurality of recesses spaced apart from each other in the upper surface layer of the organic adhesive layer; depositing an ITO material on the organic adhesive layer, The deposition thickness of the ITO material is smaller than the depth of the depression, the ITO material deposited on the upper surface layer forms a first ITO film, the ITO material deposited in the depression forms a second ITO film, and the first ITO film is formed. The ITO film is isolated from the second ITO film. By adopting the method, the production capacity can be increased and the cost can be reduced.

Figure 202210283820

Description

ITO图形化方法、显示面板的制备方法和显示面板ITO patterning method, manufacturing method of display panel, and display panel

技术领域technical field

本申请涉及显示技术领域,特别是涉及一种ITO图形化方法、显示面板的制备方法和显示面板。The present application relates to the field of display technology, and in particular, to an ITO patterning method, a method for preparing a display panel, and a display panel.

背景技术Background technique

屏下摄像头成为趋势,随着显示技术的发展,出现了屏下摄像技术。屏下摄像是将前置摄像头完全内置在屏幕之下,可以实现真正的全面屏。然而,将前置摄像头放在屏幕内层并不困难,困难的是如何解决透光问题。The under-screen camera has become a trend, and with the development of display technology, under-screen camera technology has emerged. Under-screen camera is to completely build the front camera under the screen, which can achieve a true full screen. However, it is not difficult to put the front camera on the inner layer of the screen, the difficulty is how to solve the problem of light transmission.

传统技术中,采用透明引线,如较薄的ITO膜层,将位于屏下摄像区内的发光单元与位于屏下摄像区外的像素电路电连接,以增加屏下摄像区的透过率。In the traditional technology, transparent leads, such as a thin ITO film layer, are used to electrically connect the light-emitting unit in the under-screen camera area with the pixel circuit outside the under-screen camera area to increase the transmittance of the under-screen camera area.

然而,ITO膜层的数量一般在两层以上,ITO膜层的图形化会限制整体产能,增加成本。However, the number of ITO film layers is generally more than two, and the patterning of the ITO film layers will limit the overall production capacity and increase the cost.

发明内容SUMMARY OF THE INVENTION

基于此,有必要针对上述技术问题,提供一种能够提高产能、降低成本的ITO图形化方法、显示面板的制备方法和显示面板。Based on this, it is necessary to provide an ITO patterning method, a manufacturing method of a display panel, and a display panel that can improve the productivity and reduce the cost, aiming at the above technical problems.

第一方面,本申请提供了一种ITO图形化方法。所述方法包括:In a first aspect, the present application provides an ITO patterning method. The method includes:

提供一有机胶层;provide an organic adhesive layer;

对所述有机胶层图形化,在所述有机胶层的上表层内开设多个彼此间隔的凹陷部;patterning the organic adhesive layer, and opening a plurality of recesses spaced apart from each other in the upper surface layer of the organic adhesive layer;

在所述有机胶层上沉积ITO材料,所述ITO材料的沉积厚度小于所述凹陷部的深度,沉积在所述上表层上的ITO材料形成第一ITO薄膜,沉积在所述凹陷部内的ITO材料形成第二ITO薄膜,所述第一ITO薄膜和所述第二ITO薄膜隔离。An ITO material is deposited on the organic adhesive layer, and the deposition thickness of the ITO material is smaller than the depth of the depression, the ITO material deposited on the upper surface layer forms a first ITO film, and the ITO deposited in the depression The material forms a second ITO film, the first ITO film and the second ITO film being isolated.

上述ITO图形化方法中,先提供一有机胶层,并对有机胶层图形化,在有机胶层的上表层内开设多个彼此间隔的凹陷部,再在有机胶层上沉积ITO材料,沉积在上表层上的ITO材料形成第一ITO薄膜,沉积在凹陷部内的ITO材料形成第二ITO薄膜,第一ITO薄膜和第二ITO薄膜隔离,可以利用有机胶层内部的特殊结构,使较薄的ITO材料在较厚的凹陷部拐角处自动分成彼此隔离的第一ITO薄膜和第二ITO薄膜,并且凹陷部的分布区域可以与转接线的分布区域一致,从而减小ITO膜层的图形化次数,提高整体产能,降低实现成本。In the above-mentioned ITO patterning method, an organic adhesive layer is provided first, and the organic adhesive layer is patterned, a plurality of recesses spaced apart from each other are opened in the upper surface layer of the organic adhesive layer, and then the ITO material is deposited on the organic adhesive layer. The ITO material on the upper surface layer forms the first ITO film, and the ITO material deposited in the recess forms the second ITO film. The first ITO film and the second ITO film are isolated. The special structure inside the organic adhesive layer can be used to make thinner The ITO material is automatically divided into a first ITO film and a second ITO film isolated from each other at the corners of the thicker recesses, and the distribution area of the recesses can be consistent with the distribution area of the patch cords, thereby reducing the patterning of the ITO film layer The number of times, improve the overall production capacity and reduce the realization cost.

在其中一个实施例中,所述凹陷部垂直于开设方向的截面面积,沿开设方向逐渐增大;In one of the embodiments, the cross-sectional area of the recessed portion perpendicular to the opening direction increases gradually along the opening direction;

优选地,所述凹陷部呈正梯形。Preferably, the recessed portion is in the shape of a regular trapezoid.

凹陷部垂直于开设方向的截面面积沿开设方向逐渐增大,整体上面小下面大,侧壁与底面之间的夹角为锐角,ITO材料无法附着在侧壁上,凹陷部内外沉积的ITO材料自动断开。The cross-sectional area of the depression perpendicular to the opening direction gradually increases along the opening direction. The overall top is small and the bottom is large. The angle between the side wall and the bottom surface is an acute angle. The ITO material cannot be attached to the side wall, and the ITO material deposited inside and outside the depression Disconnect automatically.

在其中一个实施例中,至少两个所述凹陷部的深度不同;In one of the embodiments, at least two of the recesses have different depths;

优选地,所述凹陷部至少包括第一凹陷部和第二凹陷部,所述第二凹陷部的深度大于所述第一凹陷部的深度。Preferably, the recessed portion includes at least a first recessed portion and a second recessed portion, and the depth of the second recessed portion is greater than that of the first recessed portion.

凹陷部的深度不同,凹陷部内沉积的ITO材料可以位于不同平面上,有利于形成不同的走线,并且可以将相邻走线之间隔开,减少相邻走线在平面上的间距,方便走线设计。The depth of the recess is different, and the ITO material deposited in the recess can be located on different planes, which is conducive to the formation of different traces, and can separate adjacent traces to reduce the distance between adjacent traces on the plane, which is convenient for walking. line design.

在其中一个实施例中,所述对所述有机胶层图形化,在所述有机胶层的上表层内开设多个彼此间隔的凹陷部,包括:In one embodiment, in the patterning of the organic adhesive layer, a plurality of recesses spaced apart from each other are provided in the upper surface layer of the organic adhesive layer, including:

透过掩膜版对所述有机胶层进行曝光,所述掩膜版包括全透光区域、半透光区域和非透光区域,所述有机胶层包括负性光刻胶;exposing the organic adhesive layer through a mask, the mask including a fully transparent area, a semi-transparent area and a non-transparent area, and the organic adhesive layer includes a negative photoresist;

对所述有机胶层进行显影,所述有机胶层与所述半透光区域相对的区域形成所述第一凹陷部,所述有机胶层与所述非透光区域相对的区域形成所述第二凹陷部。The organic adhesive layer is developed, the area of the organic adhesive layer opposite to the semi-transparent area forms the first concave portion, and the area opposite to the non-transparent area of the organic adhesive layer forms the the second recess.

负性光刻胶光照前为可溶物质,光照后形成不可溶物质。有机胶层与非透光区域相对的区域没有光照,仍然是可溶物质,显影后会溶解;有机胶层与全透光区域相对的区域有充分光照,全部变成不可溶物质,显影后会全部保留;有机胶层与半透光区域相对的区域有光照但不充分,仍然有部分可溶物质,显影后有部分会溶解。因而,有机胶层与半透光区域相对的区域形成深度较小的第一凹陷部,有机胶层与非透光区域相对的区域形成深度较大的第二凹陷部。Negative photoresists are soluble substances before exposure to light, and insoluble substances are formed after exposure to light. The area opposite the organic adhesive layer and the non-transparent area has no light, and is still a soluble substance, which will dissolve after development; the area opposite the organic adhesive layer and the fully transparent area is fully illuminated, and all become insoluble substances, which will become insoluble after development. All are reserved; the area of the organic adhesive layer opposite to the semi-transparent area is illuminated but not sufficient, and there are still some soluble substances, and some of them will dissolve after developing. Therefore, the area of the organic adhesive layer opposite to the semi-transparent area forms a first recessed portion with a smaller depth, and the area of the organic adhesive layer opposite to the non-transparent area forms a second recessed portion with a larger depth.

在其中一个实施例中,所述对所述有机胶层图形化,在所述有机胶层的上表层内开设多个彼此间隔的凹陷部,包括:In one embodiment, in the patterning of the organic adhesive layer, a plurality of recesses spaced apart from each other are provided in the upper surface layer of the organic adhesive layer, including:

对所述有机胶层图形化,在所述有机胶层内形成多个彼此间隔的所述第一凹陷部;patterning the organic adhesive layer to form a plurality of the first recesses spaced apart from each other in the organic adhesive layer;

对部分所述第一凹陷部刻蚀形成所述第二凹陷部。Part of the first recessed portion is etched to form the second recessed portion.

先对有机胶层图形化,在有机胶层内形成深度较小的第一凹陷部,再对部分第一凹陷部进一步刻蚀,使其变成深度较大的第二凹陷部,从而实现在有机胶层内形成深度不同的第一凹陷部和第二凹陷部。The organic adhesive layer is first patterned, a first recessed portion with a smaller depth is formed in the organic adhesive layer, and then part of the first recessed portion is further etched to turn it into a second recessed portion with a larger depth, so as to realize the A first recessed portion and a second recessed portion with different depths are formed in the organic adhesive layer.

在其中一个实施例中,所述ITO材料的沉积厚度为200埃~1000埃。In one embodiment, the deposition thickness of the ITO material ranges from 200 angstroms to 1000 angstroms.

ITO材料的沉积厚度为200埃~1000埃,较薄的厚度有利于凹陷部内外沉积的ITO材料在较厚的凹陷部拐角处自动分开。而且ITO材料的沉积厚度越大,导向性越好;ITO材料的沉积厚度越小,透光性越好;ITO材料的沉积厚度为200埃~1000埃,可以较好地兼顾导电性和透光性。The deposition thickness of the ITO material is 200 angstroms to 1000 angstroms, and a thinner thickness is conducive to the automatic separation of the ITO material deposited inside and outside the recess at the corners of the thicker recess. Moreover, the larger the deposition thickness of the ITO material, the better the orientation; the smaller the deposition thickness of the ITO material, the better the light transmission; the deposition thickness of the ITO material is 200 angstroms to 1000 angstroms, which can better balance the conductivity and light transmission. sex.

在其中一个实施例中,所述方法还包括:In one embodiment, the method further includes:

对部分所述第一ITO薄膜刻蚀露出所述上表层。Part of the first ITO film is etched to expose the upper surface layer.

对部分第一ITO薄膜刻蚀露出上表层,以使第一ITO薄膜的分布区域与转接线的分布区域一致,从而利用第一ITO薄膜实现发光单元与像素电路的电连接,方便走线设计。Part of the first ITO film is etched to expose the upper surface layer, so that the distribution area of the first ITO film is consistent with the distribution area of the patch wire, so that the first ITO film is used to realize the electrical connection between the light-emitting unit and the pixel circuit, which is convenient for wiring design.

在其中一个实施例中,所述方法还包括:In one embodiment, the method further includes:

对所述有机胶层图形化,在所述有机胶层内形成过孔。The organic adhesive layer is patterned to form vias in the organic adhesive layer.

在有机胶层内形成过孔,以使有机胶层上沉积的ITO材料通过过孔与有机胶层下方的像素电路电连接。具体地,贯穿有机胶层的过孔实现第一ITO薄膜与像素电路的电连接,与凹陷部连通的过孔实现第二ITO薄膜与像素电路的电连接。A via hole is formed in the organic adhesive layer, so that the ITO material deposited on the organic adhesive layer is electrically connected to the pixel circuit under the organic adhesive layer through the via hole. Specifically, the via hole penetrating the organic adhesive layer realizes the electrical connection between the first ITO film and the pixel circuit, and the via hole connected with the recess realizes the electrical connection between the second ITO film and the pixel circuit.

第二方面,本申请还提供了一种显示面板的制备方法。所述方法包括:In a second aspect, the present application also provides a method for manufacturing a display panel. The method includes:

提供一设有像素驱动电路的衬底,所述衬底包括主屏区、副屏区、以及位于所述主屏区和所述副屏区之间的过渡区,所述像素驱动电路包括设于所述主屏区和所述过渡区的多个像素电路;A substrate provided with a pixel driving circuit is provided, the substrate includes a main screen area, a sub-screen area, and a transition area between the main screen area and the sub-screen area, the pixel driving circuit includes a a plurality of pixel circuits in the main screen area and the transition area;

在所述衬底设有所述像素驱动电路的一侧铺设有机胶层;An organic adhesive layer is laid on the side of the substrate where the pixel driving circuit is arranged;

对所述有机胶层图形化,在所述有机胶层内开设与所述像素电路一一对应连通的过孔,在位于所述副屏区和所述过渡区的所述有机胶层的上表层内开设与对应的所述过孔连通的凹陷部;Patterning the organic adhesive layer, opening via holes in the organic adhesive layer that are connected to the pixel circuits in a one-to-one correspondence, on the organic adhesive layer located in the secondary screen area and the transition area A concave portion communicating with the corresponding via hole is provided in the surface layer;

在所述有机胶层远离所述像素驱动电路的一侧沉积ITO材料,所述ITO材料的沉积厚度小于所述凹陷部的深度,沉积在所述上表层上的ITO材料形成第一ITO薄膜,沉积在所述凹陷部内的ITO材料形成第二ITO薄膜,所述第一ITO薄膜和所述第二ITO薄膜隔离;其中,位于所述主屏区的发光单元通过所述第一ITO薄膜与位于所述主屏区的像素电路电连接,位于所述副屏区和所述过渡区的发光单元分别通过所述第一ITO薄膜和所述第二ITO薄膜中的一个与位于所述过渡区的所述像素电路电连接;ITO material is deposited on the side of the organic adhesive layer away from the pixel driving circuit, the deposition thickness of the ITO material is less than the depth of the recessed portion, and the ITO material deposited on the upper surface layer forms a first ITO film, The ITO material deposited in the recessed portion forms a second ITO thin film, and the first ITO thin film is isolated from the second ITO thin film; wherein, the light-emitting unit located in the main screen area is connected to the second ITO thin film through the first ITO thin film. The pixel circuits in the main screen area are electrically connected, and the light-emitting units located in the sub-screen area and the transition area are respectively connected to the light-emitting units located in the transition area through one of the first ITO film and the second ITO film. The pixel circuit is electrically connected;

优选地,与所述凹陷部连通的过孔垂直于开设方向的截面面积,沿开设方向逐渐减小;Preferably, the cross-sectional area of the via hole communicating with the recessed portion is perpendicular to the opening direction, and gradually decreases along the opening direction;

优选地,与所述凹陷部连通的过孔呈倒梯形。Preferably, the via hole communicating with the recessed portion is in the shape of an inverted trapezoid.

第三方面,本申请还提供了一种显示面板。In a third aspect, the present application also provides a display panel.

所述显示面板包括:The display panel includes:

衬底,包括主屏区、副屏区、以及位于所述主屏区和所述副屏区之间的过渡区;a substrate, including a main screen area, a sub-screen area, and a transition area between the main screen area and the sub-screen area;

像素驱动电路,包括设于所述主屏区和所述过渡区的多个像素电路;a pixel driving circuit, including a plurality of pixel circuits arranged in the main screen area and the transition area;

有机胶层,位于所述衬底设有所述像素驱动电路的一侧,所述有机胶层内具有与所述像素电路一一对应连通的过孔,位于所述副屏区和所述过渡区的所述有机胶层的上表层内具有与对应的所述过孔连通的凹陷部;An organic adhesive layer is located on the side of the substrate where the pixel driving circuit is arranged, and the organic adhesive layer has via holes connected to the pixel circuits in a one-to-one correspondence, located in the sub-screen area and the transition The upper surface layer of the organic adhesive layer in the region has a concave portion communicating with the corresponding via hole;

第一ITO薄膜,位于所述上表层上;a first ITO film, located on the upper surface layer;

第二ITO薄膜,位于所述凹陷部内,所述第一ITO薄膜和所述第二ITO薄膜隔离;The second ITO film is located in the recessed portion, and the first ITO film is isolated from the second ITO film;

发光层组,位于所述有机胶层设有所述第一ITO薄膜的一侧,所述发光层组包括位于所述主屏区、所述副屏区和所述过渡区的多个发光单元,位于所述主屏区的发光单元通过所述第一ITO薄膜与位于所述主屏区的像素电路电连接,位于所述副屏区和所述过渡区的发光单元分别通过所述第一ITO薄膜和所述第二ITO薄膜中的一个与位于所述过渡区的所述像素电路电连接。a light-emitting layer group, located on the side where the organic adhesive layer is provided with the first ITO thin film, and the light-emitting layer group includes a plurality of light-emitting units located in the main screen area, the sub-screen area and the transition area, The light-emitting unit located in the main screen area is electrically connected to the pixel circuit located in the main screen area through the first ITO film, and the light-emitting units located in the secondary screen area and the transition area pass through the first ITO film and the transition area, respectively. One of the second ITO films is electrically connected to the pixel circuit located in the transition region.

附图说明Description of drawings

为了更清楚地说明本申请实施例或传统技术中的技术方案,下面将对实施例或传统技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application or in the traditional technology, the following briefly introduces the accompanying drawings that are used in the description of the embodiments or the traditional technology. Obviously, the drawings in the following description are only the For some embodiments of the application, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.

图1为一个实施例中ITO图形化方法的应用环境图;Fig. 1 is the application environment diagram of the ITO graphical method in one embodiment;

图2为一个实施例中显示面板的部分结构示意图;2 is a schematic diagram of a partial structure of a display panel in one embodiment;

图3为一个实施例中ITO图形化方法的流程示意图;3 is a schematic flowchart of an ITO graphic method in one embodiment;

图4为一个实施例中步骤S302执行后形成的有机胶层的结构示意图;4 is a schematic structural diagram of an organic adhesive layer formed after step S302 is performed in one embodiment;

图5为一个实施例中步骤S304执行后形成的凹陷部的结构示意图;FIG. 5 is a schematic structural diagram of a recessed portion formed after step S304 is performed in one embodiment;

图6为一个实施例中步骤S306执行后形成的ITO薄膜的结构示意图;6 is a schematic structural diagram of an ITO film formed after step S306 is performed in one embodiment;

图7为一个实施例中步骤S304的流程示意图;7 is a schematic flowchart of step S304 in one embodiment;

图8为另一个实施例中步骤S304执行后形成的凹陷部的结构示意图;8 is a schematic structural diagram of a recessed portion formed after step S304 is performed in another embodiment;

图9为另一个实施例中步骤S304的流程示意图;9 is a schematic flowchart of step S304 in another embodiment;

图10为又一个实施例中步骤S304的流程示意图;10 is a schematic flowchart of step S304 in another embodiment;

图11为一个实施例中形成的过孔的结构示意图;11 is a schematic structural diagram of a via hole formed in one embodiment;

图12为另一个实施例中ITO图形化方法的流程示意图;12 is a schematic flowchart of an ITO graphic method in another embodiment;

图13为一个实施例中显示面板的制备方法的流程示意图;13 is a schematic flowchart of a method for manufacturing a display panel in one embodiment;

图14为一个实施例中步骤S1306的流程示意图;14 is a schematic flowchart of step S1306 in one embodiment;

图15为一个实施例中步骤S1404执行后形成的凹陷部的结构示意图;FIG. 15 is a schematic structural diagram of the concave portion formed after step S1404 is performed in one embodiment;

图16为一个实施例中图15中A-A向的剖面图;Figure 16 is a cross-sectional view taken along the direction A-A in Figure 15 in one embodiment;

图17为一个实施例中图15中B-B向的剖面图;Figure 17 is a sectional view taken along the direction B-B in Figure 15 in one embodiment;

图18为一个实施例中步骤S1406执行后形成的凹陷部的结构示意图;18 is a schematic structural diagram of a recessed portion formed after step S1406 is performed in one embodiment;

图19为一个实施例中图18中A-A向的剖面图;Figure 19 is a cross-sectional view taken along the direction A-A in Figure 18 in one embodiment;

图20为一个实施例中图18中C-C向的剖面图;Figure 20 is a cross-sectional view taken along direction C-C in Figure 18 in one embodiment;

图21为一个实施例中像素电路和发光单元的连接示意图。FIG. 21 is a schematic diagram of the connection between the pixel circuit and the light-emitting unit in one embodiment.

附图标记说明:Description of reference numbers:

10-显示面板,11-衬底,12-像素电路,13-发光单元,14-过孔,15-转接线;10-display panel, 11-substrate, 12-pixel circuit, 13-light-emitting unit, 14-via hole, 15-connection wire;

A-主屏区,B-副屏区,C-过渡区;A-Main screen area, B-Secondary screen area, C-Transition area;

21-有机胶层,22-凹陷部,23-过孔;21-organic glue layer, 22-recess, 23-via hole;

31-第一ITO膜层,32-第二ITO膜层。31-the first ITO film layer, 32-the second ITO film layer.

具体实施方式Detailed ways

为了使本申请的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本申请进行进一步详细说明。应当理解,此处描述的具体实施例仅仅用以解释本申请,并不用于限定本申请。In order to make the purpose, technical solutions and advantages of the present application more clearly understood, the present application will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.

本申请实施例提供的ITO图形化方法,可以应用于如图1所示的应用环境中。其中,显示面板10具有主屏区A、副屏区B和过渡区C,主屏区A至少部分围绕副屏区B,过渡区C位于主屏区A和副屏区B之间。如图2所示,显示面板10包括衬底11以及一一对应电连接的像素电路12和发光单元13。像素电路12分布在主屏区A和过渡区C,发光单元13分布在主屏区A、副屏区B和过渡区C。位于主屏区A的发光单元13与位于主屏区A的像素电路12相对设置,两者之间可以直接通过过孔14连接。位于副屏区B和过渡区C的发光单元13与位于过渡区C的像素电路12错位设置,两者之间需要通过转接线15连接。这样可以将位于副屏区B的发光单元13与衬底11之间的空间空出,避免在副屏区B设置像素电路12影响到AUG光线入射,有利于设置在副屏区B的感光器件接收光学信号,从而实现屏下摄像。The ITO graphing method provided in the embodiment of the present application can be applied to the application environment shown in FIG. 1 . The display panel 10 has a main screen area A, a sub screen area B and a transition area C. The main screen area A at least partially surrounds the sub screen area B, and the transition area C is located between the main screen area A and the sub screen area B. As shown in FIG. 2 , the display panel 10 includes a substrate 11 , and pixel circuits 12 and light-emitting units 13 that are electrically connected in one-to-one correspondence. The pixel circuits 12 are distributed in the main screen area A and the transition area C, and the light-emitting units 13 are distributed in the main screen area A, the auxiliary screen area B and the transition area C. The light emitting unit 13 located in the main screen area A is disposed opposite to the pixel circuit 12 located in the main screen area A, and the two can be directly connected through the via hole 14 . The light emitting units 13 located in the sub-screen area B and the transition area C and the pixel circuits 12 located in the transition area C are arranged in a dislocation, and the connection between the two needs to be connected by an adapter wire 15 . In this way, the space between the light-emitting unit 13 located in the sub-screen area B and the substrate 11 can be vacated, and the arrangement of the pixel circuit 12 in the sub-screen area B can avoid affecting the incidence of AUG light, which is beneficial to the photosensitive device disposed in the sub-screen area B. Receive optical signals to realize off-screen photography.

如图2所示,为方便走线设计,转接线15分布于至少两层。为了增加副屏区12的透过率,转接线15采用透明的ITO膜层实现。由于ITO膜层的图形化工艺复杂,耗时长,因此ITO膜层图形化至少进行两次会限制整体产能,增加实现成本。As shown in FIG. 2 , in order to facilitate wiring design, the patch cords 15 are distributed on at least two layers. In order to increase the transmittance of the secondary screen area 12, the transition line 15 is realized by using a transparent ITO film layer. Since the patterning process of the ITO film is complicated and time-consuming, the patterning of the ITO film at least twice will limit the overall production capacity and increase the implementation cost.

为解决上述问题,本申请实施例提供了一种ITO图形化方法、显示面板的制备方法和显示面板,先提供一有机胶层,并对有机胶层图形化,在有机胶层的上表层内开设多个彼此间隔的凹陷部,再在有机胶层上沉积ITO材料,ITO材料的沉积厚度小于凹陷部的深度,沉积在上表层上的ITO材料形成第一ITO薄膜,沉积在凹陷部内的ITO材料形成第二ITO薄膜,第一ITO薄膜和第二ITO薄膜隔离,可以利用有机胶层内部的特殊结构,使较薄的ITO材料在较厚的凹陷部拐角处自动分成彼此隔离的第一ITO薄膜和第二ITO薄膜,并且凹陷部的分布区域可以与转接线的分布区域一致,从而减小ITO膜层的图形化次数,提高整体产能,降低实现成本。In order to solve the above problems, the embodiments of the present application provide an ITO patterning method, a preparation method of a display panel, and a display panel. First, an organic adhesive layer is provided, and the organic adhesive layer is patterned. Open a plurality of recesses spaced apart from each other, and then deposit ITO material on the organic adhesive layer. The deposition thickness of the ITO material is less than the depth of the recessed part. The ITO material deposited on the upper surface layer forms a first ITO film, and the ITO deposited in the recessed part. The material forms the second ITO film, and the first ITO film and the second ITO film are isolated. The special structure inside the organic adhesive layer can be used to make the thinner ITO material automatically divide into the first ITO isolated from each other at the corners of the thicker recesses The film and the second ITO film, and the distribution area of the concave portion can be consistent with the distribution area of the patch wire, thereby reducing the patterning times of the ITO film layer, improving the overall productivity, and reducing the implementation cost.

本申请实施例公开的ITO图形化方法可以应用于显示面板的制备,显示面板可以应用于各种显示装置,如手机终端、可穿戴设备、车载设备、平板电脑、笔记本电脑、计算机显示器等。The ITO graphic method disclosed in the embodiments of the present application can be applied to the preparation of display panels, and the display panels can be applied to various display devices, such as mobile phone terminals, wearable devices, vehicle-mounted devices, tablet computers, notebook computers, computer monitors, and the like.

为便于更佳地理解,在详细展开之前,先对一些内容进行说明:In order to facilitate better understanding, before going into detail, some contents are explained first:

ITO(Indium tin oxide,氧化铟锡):一种混合物,透明茶色薄膜或黄偏灰色块状,由90%的In2O3和10%的SnO2混合而成,主要用于制作液晶显示器、平板显示器、等离子显示器、触摸屏、电子纸、有机发光二极管、太阳能电池、抗静电镀膜、EMI(ElectromagneticInterference,电磁干扰)屏蔽的透明传导镀、各种光学镀膜等。氧化铟锡主要的特性是其电学传导和光学透明的组合。薄膜沉积时需要兼顾导电性和透明度,因为高浓度电荷载流子将会增加材料的电导率,但会降低它的透明度。氧化铟锡薄膜通常采用物理气相沉积或者一些溅射沉积技术的方法沉积到表面。ITO (Indium tin oxide, indium tin oxide): a mixture, transparent brown film or yellowish gray block, made of 90% In2O3 and 10% SnO2, mainly used to make liquid crystal displays, flat panel displays, plasma Displays, touch screens, electronic paper, organic light-emitting diodes, solar cells, antistatic coatings, transparent conductive coatings for EMI (Electromagnetic Interference) shielding, various optical coatings, etc. The main property of indium tin oxide is its combination of electrical conductivity and optical transparency. A compromise between conductivity and transparency is required for thin film deposition, as a high concentration of charge carriers will increase the conductivity of the material but reduce its transparency. Indium tin oxide films are usually deposited onto surfaces by physical vapor deposition or some sputter deposition techniques.

图形化:在结构内或表面层建立图形的一系列加工,这些图形根据集成电路中物理“部件”的要求来确定其尺寸和位置。Patterning: A series of processes that create patterns within a structure or surface layer that are sized and positioned according to the requirements of the physical "parts" in an integrated circuit.

在一个实施例中,如图3所示,提供了一种ITO图形化方法,包括以下步骤:In one embodiment, as shown in FIG. 3, a kind of ITO patterning method is provided, including the following steps:

步骤S302,提供一有机胶层。Step S302, providing an organic adhesive layer.

其中,有机胶层为有机胶凝材料形成的层状结构。有机胶凝材料是指以天然或人工合成高分子化合物为基本组成的一类胶凝材料。胶凝材料是指能将其他材料胶结成整体,并具有一定强度的材料。Wherein, the organic adhesive layer is a layered structure formed by an organic gelling material. Organic gelling materials refer to a class of gelling materials based on natural or synthetic polymer compounds. Cementitious materials refer to materials that can cement other materials into a whole and have a certain strength.

示例性地,有机胶层为光刻胶层,可以直接进行图形化,简化工艺流程,降低实现成本。Exemplarily, the organic adhesive layer is a photoresist layer, which can be directly patterned, thereby simplifying the process flow and reducing the implementation cost.

如图4所示,执行步骤S302之后,形成有一有机胶层21。在实际应用中,有机胶层21可以设置于具有支撑作用的表面上,如衬底的表面。具体地,步骤S302包括:利用甩胶机将有机胶均匀甩开,有机胶平铺在表面上形成有机胶层。As shown in FIG. 4 , after step S302 is performed, an organic adhesive layer 21 is formed. In practical applications, the organic adhesive layer 21 may be disposed on a surface with a supporting function, such as the surface of a substrate. Specifically, step S302 includes: using a glue spinner to evenly throw off the organic glue, and laying the organic glue on the surface to form an organic glue layer.

步骤S304,对有机胶层图形化,在有机胶层的上表层内开设多个彼此间隔的凹陷部。In step S304, the organic adhesive layer is patterned, and a plurality of recessed portions spaced apart from each other are formed in the upper surface layer of the organic adhesive layer.

其中,有机胶层具有相对设置的上表面和下表面,上表面位于下表面之上。上表层为有机胶层靠近上表面的部分,上表层内各点距上表面的距离小于或等于设定阈值。示例性地,有机胶层可以由上表层和位于上表层下方的其他层组成。例如,有机胶层的厚度为a,上表层的厚度为b,则上表层内各点距上表面的距离小于或等于b,且b<a。Wherein, the organic adhesive layer has an upper surface and a lower surface arranged oppositely, and the upper surface is located on the lower surface. The upper surface layer is the part of the organic adhesive layer close to the upper surface, and the distance between each point in the upper surface layer and the upper surface is less than or equal to the set threshold. Illustratively, the organic subbing layer may consist of an upper surface layer and other layers located below the upper surface layer. For example, if the thickness of the organic adhesive layer is a and the thickness of the upper surface layer is b, the distance between each point in the upper surface layer and the upper surface is less than or equal to b, and b<a.

如图5所示,执行步骤S304之后,有机胶层21的上表层内形成有多个彼此间隔的凹陷部22。在实际应用中,凹陷部22的分布区域可以与电连接发光单元和像素电路的转接线的分布区域相同,以使凹陷部22内沉积的ITO材料直接形成转接线,从而不需要进行ITO图形化。As shown in FIG. 5 , after step S304 is performed, a plurality of recessed portions 22 spaced apart from each other are formed in the upper surface layer of the organic adhesive layer 21 . In practical applications, the distribution area of the recessed portion 22 can be the same as the distribution area of the patch cords that electrically connect the light-emitting unit and the pixel circuit, so that the ITO material deposited in the recessed portion 22 can directly form patch cords, so that no ITO patterning is required. .

具体地,当有机胶层为光刻胶层时,先透过掩膜版对有机胶层进行曝光,再对有机胶层进行显影,即可实现有机胶层的图形化,从而在有机胶层的上表层内开设多个彼此间隔的凹陷部。Specifically, when the organic adhesive layer is a photoresist layer, the organic adhesive layer is first exposed through a mask, and then the organic adhesive layer is developed, so that the patterning of the organic adhesive layer can be realized. A plurality of recesses spaced apart from each other are opened in the upper surface layer of the .

当有机胶层不是光刻胶层时,先在有机胶层上铺设光刻胶层,再透过掩膜版对光刻胶层进行曝光,并对光刻胶层进行显影,实现光刻胶层的图形化,然后将光刻胶层的图形转移至有机胶层上,最后去除光刻胶层。When the organic adhesive layer is not a photoresist layer, first lay a photoresist layer on the organic adhesive layer, then expose the photoresist layer through a mask, and develop the photoresist layer to realize the photoresist layer. Layer patterning, then transfer the pattern of the photoresist layer to the organic adhesive layer, and finally remove the photoresist layer.

需要说明的是,有机胶层的图形化与ITO的图形化,虽然都是图形化,但是由于材料性质的不同,具体的工艺流程是不同的。ITO图形化的工艺流程更为复杂,耗时更长,对产能的影响较大,因此从ITO的图形化变成有机胶层的图形化,可以减少生产时间,提高产能。It should be noted that although the patterning of the organic adhesive layer and the patterning of ITO are both patterned, due to the different material properties, the specific process flow is different. The process flow of ITO patterning is more complicated, time-consuming, and has a greater impact on productivity. Therefore, changing from ITO patterning to organic adhesive layer patterning can reduce production time and increase productivity.

步骤S306,在有机胶层上沉积ITO材料,ITO材料的沉积厚度小于凹陷部的深度,沉积在上表层上的ITO材料形成第一ITO薄膜,沉积在凹陷部内的ITO材料形成第二ITO薄膜,第一ITO薄膜和第二ITO薄膜隔离。Step S306, depositing an ITO material on the organic adhesive layer, the deposition thickness of the ITO material is less than the depth of the depression, the ITO material deposited on the upper surface layer forms a first ITO film, and the ITO material deposited in the depression forms a second ITO film, The first ITO film and the second ITO film are isolated.

其中,凹陷部内外位于不同平面上,沉积在凹陷部内外的ITO材料也位于不同平面上,凹陷部的拐角处将凹陷部内外的ITO材料切断,因而凹陷部内外自动形成彼此隔开的ITO薄膜,即沉积在上表层上的ITO材料形成第一ITO薄膜,沉积在凹陷部内的ITO材料形成第二ITO薄膜,第一ITO薄膜和第二ITO薄膜隔离。The inside and outside of the depression are located on different planes, and the ITO material deposited inside and outside the depression is also located on different planes. The corners of the depression cut off the ITO material inside and outside the depression, so the inside and outside of the depression automatically form ITO films that are separated from each other. That is, the ITO material deposited on the upper surface layer forms a first ITO thin film, and the ITO material deposited in the recess forms a second ITO thin film, and the first ITO thin film and the second ITO thin film are isolated.

如图6所示,执行步骤S306之后,上表层上形成有第一ITO薄膜31,凹陷部内形成有第二ITO薄膜32,第一ITO薄膜31和第二ITO薄膜32之间是断开的。As shown in FIG. 6 , after step S306 is performed, a first ITO film 31 is formed on the upper surface layer, a second ITO film 32 is formed in the recess, and the first ITO film 31 and the second ITO film 32 are disconnected.

具体地,采用物理气相沉积技术或者磁控溅射沉积技术在有机胶层上沉积ITO材料。Specifically, the ITO material is deposited on the organic adhesive layer by using a physical vapor deposition technique or a magnetron sputtering deposition technique.

上述ITO图形化方法中,先提供一有机胶层,并对有机胶层图形化,在有机胶层的上表层内开设多个彼此间隔的凹陷部,再在有机胶层上沉积ITO材料,沉积在上表层上的ITO材料形成第一ITO薄膜,沉积在凹陷部内的ITO材料形成第二ITO薄膜,第一ITO薄膜和第二ITO薄膜隔离,可以利用有机胶层内部的特殊结构,使较薄的ITO材料在较厚的凹陷部拐角处自动分成彼此隔离的第一ITO薄膜和第二ITO薄膜,并且凹陷部的分布区域可以与转接线的分布区域一致,从而减小ITO膜层的图形化次数,提高整体产能,降低实现成本。In the above-mentioned ITO patterning method, an organic adhesive layer is provided first, and the organic adhesive layer is patterned, a plurality of recesses spaced apart from each other are opened in the upper surface layer of the organic adhesive layer, and then the ITO material is deposited on the organic adhesive layer. The ITO material on the upper surface layer forms the first ITO film, and the ITO material deposited in the recess forms the second ITO film. The first ITO film and the second ITO film are isolated. The special structure inside the organic adhesive layer can be used to make thinner The ITO material is automatically divided into a first ITO film and a second ITO film isolated from each other at the corners of the thicker recesses, and the distribution area of the recesses can be consistent with the distribution area of the patch cords, thereby reducing the patterning of the ITO film layer The number of times, improve the overall production capacity and reduce the realization cost.

在一个实施例中,如图6所示,ITO材料的沉积厚度d为200埃~1000埃。In one embodiment, as shown in FIG. 6 , the deposition thickness d of the ITO material is 200 angstroms to 1000 angstroms.

ITO材料的沉积厚度为200埃~1000埃,较薄的厚度有利于凹陷部内外沉积的ITO材料在较厚的凹陷部拐角处自动分开。而且ITO材料的沉积厚度越大,导向性越好;ITO材料的沉积厚度越小,透光性越好;ITO材料的沉积厚度为200埃~1000埃,可以较好地兼顾导电性和透光性。The deposition thickness of the ITO material is 200 angstroms to 1000 angstroms, and a thinner thickness is conducive to the automatic separation of the ITO material deposited inside and outside the recess at the corners of the thicker recess. Moreover, the larger the deposition thickness of the ITO material, the better the orientation; the smaller the deposition thickness of the ITO material, the better the light transmission; the deposition thickness of the ITO material is 200 angstroms to 1000 angstroms, which can better balance the conductivity and light transmission. sex.

在一个实施例中,如图5所示,凹陷部22垂直于开设方向(图5中用箭头表示)的截面面积,沿开设方向逐渐增大。In one embodiment, as shown in FIG. 5 , the cross-sectional area of the concave portion 22 perpendicular to the opening direction (indicated by arrows in FIG. 5 ) gradually increases along the opening direction.

凹陷部垂直于开设方向的截面面积沿开设方向逐渐增大,整体上面小下面大,侧壁与底面之间的夹角为锐角,ITO材料无法附着在侧壁上,凹陷部内外沉积的ITO材料自动断开。The cross-sectional area of the depression perpendicular to the opening direction gradually increases along the opening direction. The overall top is small and the bottom is large. The angle between the side wall and the bottom surface is an acute angle. The ITO material cannot be attached to the side wall, and the ITO material deposited inside and outside the depression Disconnect automatically.

示例性地,如图5所示,凹陷部22呈正梯形。Exemplarily, as shown in FIG. 5 , the recessed portion 22 is in the shape of a regular trapezoid.

凹陷部呈正梯形,有利于凹陷部内外沉积的ITO材料自动断开,并且工艺上很容易实现。The concave portion is in the shape of a regular trapezoid, which is conducive to automatic disconnection of the ITO material deposited inside and outside the concave portion, and is easy to realize in the process.

在本实施例的一种实现方式中,有机胶包括负性光刻胶。In an implementation manner of this embodiment, the organic glue includes negative photoresist.

如图7所示,步骤S304包括:As shown in Figure 7, step S304 includes:

步骤S702,透过掩膜版对有机胶层进行曝光,掩膜版包括多个彼此间隔的非透光区域、以及位于非透光区域之间的透光区域。Step S702 , exposing the organic adhesive layer through a mask, the mask including a plurality of non-light-transmitting regions spaced apart from each other, and light-transmitting regions located between the non-light-transmitting regions.

步骤S704,对有机胶层进行显影,有机胶层与非透光区域相对的区域形成呈正梯形的凹陷部。In step S704, the organic adhesive layer is developed, and the area of the organic adhesive layer opposite to the non-light-transmitting area forms a positive trapezoidal depression.

负性光刻胶光照前为可溶物质,光照后形成不可溶物质。有机胶层与非透光区域相对的区域没有光照,仍然是可溶物质,显影后会溶解;有机胶层与透光区域相对的区域有光照,变成不可溶物质,显影后会保留。有机胶层与非透光区域和透光区域交界处相对的区域中,上半部分有光照,变成不可溶物质,显影后会保留;下半部分没有光照,仍然是可溶物质,显影后会溶解。因而,最终在有机胶层与非透光区域相对的区域形成呈正梯形的凹陷部。Negative photoresists are soluble substances before exposure to light, and insoluble substances are formed after exposure to light. The area opposite the organic adhesive layer and the non-transparent area has no light, and is still a soluble substance, which will dissolve after development; the area opposite the organic adhesive layer and the translucent area is illuminated and becomes an insoluble substance, which will remain after development. In the area opposite to the junction of the non-transmitting area and the translucent area, the upper part of the organic adhesive layer has light and becomes insoluble matter, which will be retained after development; will dissolve. Therefore, a depression in the shape of a regular trapezoid is finally formed in the area where the organic adhesive layer is opposite to the non-light-transmitting area.

在一个实施例中,如图8所示,至少两个凹陷部22的深度不同。In one embodiment, as shown in FIG. 8 , the depths of the at least two recesses 22 are different.

凹陷部的深度不同,凹陷部内沉积的ITO材料可以位于不同平面上,有利于形成不同的走线,并且可以将相邻走线之间隔开,减少相邻走线在平面上的间距,方便走线设计。The depth of the recess is different, and the ITO material deposited in the recess can be located on different planes, which is conducive to the formation of different traces, and can separate adjacent traces to reduce the distance between adjacent traces on the plane, which is convenient for walking. line design.

示例性地,如图8所示,凹陷部至少包括第一凹陷部和第二凹陷部,第二凹陷部的深度大于第一凹陷部的深度。Exemplarily, as shown in FIG. 8 , the recessed portion includes at least a first recessed portion and a second recessed portion, and the depth of the second recessed portion is greater than that of the first recessed portion.

在本实施例的一种实现方式中,如图9所示,步骤S304包括:In an implementation manner of this embodiment, as shown in FIG. 9 , step S304 includes:

步骤S902,透过掩膜版对有机胶层进行曝光,掩膜版包括全透光区域、半透光区域和非透光区域,有机胶层包括负性光刻胶。In step S902, the organic adhesive layer is exposed through a mask, the mask includes a fully transparent area, a semi-transparent area and a non-transparent area, and the organic adhesive layer includes a negative photoresist.

步骤S904,对有机胶层进行显影,有机胶层与半透光区域相对的区域形成第一凹陷部,有机胶层与非透光区域相对的区域形成第二凹陷部。In step S904, the organic adhesive layer is developed, the area of the organic adhesive layer opposite to the semi-transparent area forms a first concave portion, and the area of the organic adhesive layer opposite to the non-transparent area forms a second concave portion.

负性光刻胶光照前为可溶物质,光照后形成不可溶物质。有机胶层与非透光区域相对的区域没有光照,仍然是可溶物质,显影后会溶解;有机胶层与全透光区域相对的区域有充分光照,全部变成不可溶物质,显影后会全部保留;有机胶层与半透光区域相对的区域有光照但不充分,仍然有部分可溶物质,显影后有部分会溶解。因而,有机胶层与半透光区域相对的区域形成深度较小的第一凹陷部,有机胶层与非透光区域相对的区域形成深度较大的第二凹陷部。Negative photoresists are soluble substances before exposure to light, and insoluble substances are formed after exposure to light. The area opposite the organic adhesive layer and the non-transparent area has no light, and is still a soluble substance, which will dissolve after development; the area opposite the organic adhesive layer and the fully transparent area is fully illuminated, and all become insoluble substances, which will become insoluble after development. All are reserved; the area of the organic adhesive layer opposite to the semi-transparent area is illuminated but not sufficient, and there are still some soluble substances, and some of them will dissolve after developing. Therefore, the area of the organic adhesive layer opposite to the semi-transparent area forms a first recessed portion with a smaller depth, and the area of the organic adhesive layer opposite to the non-transparent area forms a second recessed portion with a larger depth.

在本实施例的另一种实现方式中,如图10所示,步骤S304包括:In another implementation manner of this embodiment, as shown in FIG. 10 , step S304 includes:

步骤S1002,对有机胶层图形化,在有机胶层内形成多个彼此间隔的第一凹陷部。Step S1002 , patterning the organic adhesive layer, and forming a plurality of first recesses spaced apart from each other in the organic adhesive layer.

具体地,当有机胶层为光刻胶层时,先透过掩膜版对有机胶层进行曝光,再对有机胶层进行显影,即可实现有机胶层的图形化,从而在有机胶层的上表层内开设多个彼此间隔的第一凹陷部。Specifically, when the organic adhesive layer is a photoresist layer, the organic adhesive layer is first exposed through a mask, and then the organic adhesive layer is developed, so that the patterning of the organic adhesive layer can be realized. A plurality of first recesses spaced apart from each other are set in the upper surface layer of the .

当有机胶层不是光刻胶层时,先在有机胶层上铺设光刻胶层,再透过掩膜版对光刻胶层进行曝光,并对光刻胶层进行显影,实现光刻胶层的图形化,然后将光刻胶层的图形转移至有机胶层上,最后去除光刻胶层。When the organic adhesive layer is not a photoresist layer, first lay a photoresist layer on the organic adhesive layer, then expose the photoresist layer through a mask, and develop the photoresist layer to realize the photoresist layer. Layer patterning, then transfer the pattern of the photoresist layer to the organic adhesive layer, and finally remove the photoresist layer.

步骤S1004,对部分第一凹陷部刻蚀形成第二凹陷部。Step S1004, etching part of the first recessed portion to form a second recessed portion.

具体地,步骤S1004可以与步骤S1002类似,不同之处主要在于选择的掩膜版不同,具体为掩膜版中透光区域和非透光区域的分布位置不同。Specifically, step S1004 may be similar to step S1002, and the difference mainly lies in that the selected masks are different, specifically, the distribution positions of the light-transmitting regions and the non-light-transmitting regions in the mask are different.

在本实施例中,先对有机胶层图形化,在有机胶层内形成深度较小的第一凹陷部,再对部分第一凹陷部进一步刻蚀,使其变成深度较大的第二凹陷部,从而实现在有机胶层内形成深度不同的第一凹陷部和第二凹陷部。In this embodiment, the organic adhesive layer is patterned first, a first recessed portion with a smaller depth is formed in the organic adhesive layer, and then part of the first recessed portion is further etched to become a second recessed portion with a larger depth. A recessed portion is formed, thereby realizing the formation of a first recessed portion and a second recessed portion with different depths in the organic adhesive layer.

在一个实施例中,该方法还包括:对部分第一ITO薄膜刻蚀露出上表层。In one embodiment, the method further includes: etching a portion of the first ITO thin film to expose the upper surface layer.

具体地,先在ITO材料上铺设光刻胶层,再透过掩膜版对光刻胶层进行曝光,并对光刻胶层进行显影,实现光刻胶层的图形化,然后将光刻胶层的图形转移至第一ITO薄膜上,最后去除光刻胶层。Specifically, a photoresist layer is first laid on the ITO material, then the photoresist layer is exposed through a mask, and the photoresist layer is developed to realize the patterning of the photoresist layer, and then the photoresist layer is The pattern of the adhesive layer is transferred to the first ITO film, and finally the photoresist layer is removed.

在本实施例中,对部分第一ITO薄膜刻蚀露出上表层,以使第一ITO薄膜的分布区域与转接线的分布区域一致,从而利用第一ITO薄膜实现发光单元与像素电路的电连接,方便走线设计。In this embodiment, part of the first ITO film is etched to expose the upper surface layer, so that the distribution area of the first ITO film is consistent with the distribution area of the patch wire, so that the first ITO film is used to realize the electrical connection between the light-emitting unit and the pixel circuit , which is convenient for wiring design.

需要说明的是,虽然这里有对ITO图形化,但是整个过程只进行这一次ITO图形化,减少了ITO图形化的次数,可以提高整体产能,降低实现成本。It should be noted that although ITO is patterned here, only one ITO patterning is performed in the entire process, which reduces the number of ITO patterning, improves overall productivity and reduces implementation costs.

在一个实施例中,该方法还包括:对有机胶层图形化,在有机胶层内形成过孔。该步骤在步骤S304之后,且在步骤S306之前执行。In one embodiment, the method further includes: patterning the organic adhesive layer to form via holes in the organic adhesive layer. This step is performed after step S304 and before step S306.

如图11所示,执行上述步骤之后,有机胶层21内形成过孔23,一部分过孔23直接贯穿有机胶层21,另一部分过孔23与凹陷部22连通。As shown in FIG. 11 , after the above steps are performed, via holes 23 are formed in the organic adhesive layer 21 .

具体地,当有机胶层为光刻胶层时,先透过掩膜版对有机胶层进行曝光,再对有机胶层进行显影,即可实现有机胶层的图形化,从而在有机胶层内形成过孔。Specifically, when the organic adhesive layer is a photoresist layer, the organic adhesive layer is first exposed through a mask, and then the organic adhesive layer is developed, so that the patterning of the organic adhesive layer can be realized. vias are formed inside.

当有机胶层不是光刻胶层时,先在有机胶层上铺设光刻胶层,再透过掩膜版对光刻胶层进行曝光,并对光刻胶层进行显影,实现光刻胶层的图形化,然后将光刻胶层的图形转移至有机胶层上,最后去除光刻胶层。When the organic adhesive layer is not a photoresist layer, first lay a photoresist layer on the organic adhesive layer, then expose the photoresist layer through a mask, and develop the photoresist layer to realize the photoresist layer. Layer patterning, then transfer the pattern of the photoresist layer to the organic adhesive layer, and finally remove the photoresist layer.

在本实施例中,在有机胶层内形成过孔,以使有机胶层上沉积的ITO材料通过过孔与有机胶层下方的像素电路电连接。具体地,贯穿有机胶层的过孔实现第一ITO薄膜与像素电路的电连接,与凹陷部连通的过孔实现第二ITO薄膜与像素电路的电连接。In this embodiment, via holes are formed in the organic adhesive layer, so that the ITO material deposited on the organic adhesive layer is electrically connected to the pixel circuit under the organic adhesive layer through the via holes. Specifically, the via hole penetrating the organic adhesive layer realizes the electrical connection between the first ITO film and the pixel circuit, and the via hole connected with the recess realizes the electrical connection between the second ITO film and the pixel circuit.

示例性地,如图11所示,过孔23垂直于开设方向(图11中用箭头表示)的截面面积,沿开设方向逐渐减小。Exemplarily, as shown in FIG. 11 , the cross-sectional area of the via hole 23 perpendicular to the opening direction (indicated by arrows in FIG. 11 ) gradually decreases along the opening direction.

过孔垂直于开设方向的截面面积沿开设方向逐渐减小,整体上面小下面大,侧壁与底面之间的夹角为钝角,有利于ITO材料附着在侧壁上实现电连接。The cross-sectional area of the vias perpendicular to the opening direction gradually decreases along the opening direction, the overall upper surface is smaller and the lower surface is larger, and the angle between the sidewall and the bottom surface is an obtuse angle, which is conducive to the attachment of the ITO material to the sidewall to achieve electrical connection.

如图12所示,提供了一种ITO图形化方法,是图3所示的ITO图形化方法的一种具体实现,包括以下步骤:As shown in FIG. 12, an ITO graphic method is provided, which is a specific implementation of the ITO graphic method shown in FIG. 3, including the following steps:

步骤S1202,提供一有机胶层。Step S1202, providing an organic adhesive layer.

步骤S1204,对有机胶层图形化,在有机胶层的上表层内开设多个彼此间隔的凹陷部。In step S1204, the organic adhesive layer is patterned, and a plurality of recesses spaced apart from each other are formed in the upper surface layer of the organic adhesive layer.

步骤S1206,对有机胶层图形化,在有机胶层内形成过孔。Step S1206, patterning the organic adhesive layer to form via holes in the organic adhesive layer.

步骤S1208,在有机胶层上沉积ITO材料,ITO材料的沉积厚度小于凹陷部的深度,沉积在上表层上的ITO材料形成第一ITO薄膜,沉积在凹陷部内的ITO材料形成第二ITO薄膜,第一ITO薄膜和第二ITO薄膜隔离。Step S1208, depositing an ITO material on the organic adhesive layer, the deposition thickness of the ITO material is less than the depth of the depression, the ITO material deposited on the upper surface layer forms a first ITO film, and the ITO material deposited in the depression forms a second ITO film, The first ITO film and the second ITO film are isolated.

步骤S1210,对部分第一ITO薄膜刻蚀露出上表层。Step S1210, etching a part of the first ITO thin film to expose the upper surface layer.

应该理解的是,虽然如上所述的各实施例所涉及的流程图中的各个步骤按照箭头的指示依次显示,但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明,这些步骤的执行并没有严格的顺序限制,这些步骤可以以其它的顺序执行。而且,如上所述的各实施例所涉及的流程图中的至少一部分步骤可以包括多个步骤或者多个阶段,这些步骤或者阶段并不必然是在同一时刻执行完成,而是可以在不同的时刻执行,这些步骤或者阶段的执行顺序也不必然是依次进行,而是可以与其它步骤或者其它步骤中的步骤或者阶段的至少一部分轮流或者交替地执行。It should be understood that, although the steps in the flowcharts involved in the above embodiments are sequentially displayed according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, the execution of these steps is not strictly limited to the order, and these steps may be performed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed and completed at the same time, but may be performed at different times The execution order of these steps or phases is not necessarily sequential, but may be performed alternately or alternately with other steps or at least a part of the steps or phases in the other steps.

基于同样的发明构思,本申请实施例还提供了一种显示面板的制备方法,如图13所示,包括以下步骤:Based on the same inventive concept, an embodiment of the present application also provides a method for manufacturing a display panel, as shown in FIG. 13 , including the following steps:

步骤S1302,提供一设有像素驱动电路的衬底,衬底包括主屏区、副屏区、以及位于主屏区和副屏区之间的过渡区,像素驱动电路包括设于主屏区和过渡区的多个像素电路。Step S1302, providing a substrate provided with a pixel driving circuit, the substrate includes a main screen area, a sub-screen area, and a transition area between the main screen area and the sub-screen area, and the pixel driving circuit includes the main screen area and the transition area. multiple pixel circuits.

步骤S1304,在衬底设有像素驱动电路的一侧铺设有机胶层。Step S1304, laying an organic adhesive layer on the side of the substrate where the pixel driving circuit is provided.

步骤S1306,对有机胶层图形化,在有机胶层内开设与像素电路一一对应连通的过孔,在位于副屏区和过渡区的有机胶层的上表层内开设与对应的过孔连通的凹陷部。Step S1306, patterning the organic adhesive layer, opening vias in the organic adhesive layer that communicate with the pixel circuits in one-to-one correspondence, and opening the upper surface layer of the organic adhesive layer located in the secondary screen area and the transition area to communicate with the corresponding vias the depression.

步骤S1308,在有机胶层远离像素驱动电路的一侧沉积ITO材料,ITO材料的沉积厚度小于凹陷部的深度,沉积在上表层上的ITO材料形成第一ITO薄膜,沉积在凹陷部内的ITO材料形成第二ITO薄膜,第一ITO薄膜和第二ITO薄膜隔离。Step S1308, depositing an ITO material on the side of the organic adhesive layer away from the pixel driving circuit, the deposition thickness of the ITO material is less than the depth of the depression, the ITO material deposited on the upper surface layer forms a first ITO film, and the ITO material deposited in the depression A second ITO film is formed, and the first ITO film is isolated from the second ITO film.

其中,位于主屏区的发光单元通过第一ITO薄膜与位于主屏区的像素电路电连接,位于副屏区和过渡区的发光单元分别通过第一ITO薄膜和第二ITO薄膜中的一个与位于过渡区的像素电路电连接。Wherein, the light-emitting unit located in the main screen area is electrically connected to the pixel circuit located in the main screen area through the first ITO film, and the light-emitting unit located in the sub-screen area and the transition area is connected to the pixel circuit located in the transition area through one of the first ITO film and the second ITO film respectively. The pixel circuits of the regions are electrically connected.

在一个实施例中,与凹陷部连通的过孔垂直于开设方向的截面面积,沿开设方向逐渐减小。In one embodiment, the cross-sectional area of the via hole that communicates with the recessed portion is perpendicular to the opening direction, and gradually decreases along the opening direction.

示例性地,与凹陷部连通的过孔呈倒梯形。Exemplarily, the via hole communicating with the recessed portion has an inverted trapezoid shape.

在本实施例的一种实现方式中,有机胶层包括依次层叠的正性光刻胶和负性光刻胶。In an implementation manner of this embodiment, the organic adhesive layer includes a positive photoresist and a negative photoresist stacked in sequence.

如图14所示,步骤S1306包括:As shown in Figure 14, step S1306 includes:

步骤S1402,透过第一掩膜版对有机胶层进行曝光,第一掩膜版包括多个彼此间隔的不透光区域、以及位于不透光区域之间的透光区域。Step S1402 , exposing the organic adhesive layer through a first mask, where the first mask includes a plurality of opaque areas spaced apart from each other, and transparent areas located between the opaque areas.

步骤S1404,对有机胶层进行显影,有机胶层与不透光区域相对的区域形成正梯形凹陷部。In step S1404 , the organic adhesive layer is developed, and a positive trapezoidal concave portion is formed in an area of the organic adhesive layer opposite to the opaque area.

图15为一个实施例中步骤S1404执行后形成的凹陷部的结构示意图,图16为一个实施例中图15中A-A向的剖面图,图17为一个实施例中图15中B-B向的剖面图。如图15-图17所示,在步骤S1404执行之后,有机胶层21内形成正梯形凹陷部22。FIG. 15 is a schematic structural diagram of the concave portion formed after step S1404 is performed in one embodiment, FIG. 16 is a cross-sectional view taken along A-A in FIG. 15 in one embodiment, and FIG. 17 is a cross-sectional view taken along B-B in FIG. 15 in one embodiment . As shown in FIGS. 15-17 , after step S1404 is performed, a regular trapezoidal recess 22 is formed in the organic adhesive layer 21 .

步骤S1406,透过第二掩膜版对有机胶层进行曝光,第二掩膜版包括多个彼此间隔的透光区域、以及位于透光区域之间的不透光区域。Step S1406 , exposing the organic adhesive layer through a second mask, where the second mask includes a plurality of light-transmitting regions spaced apart from each other, and non-light-transmitting regions located between the light-transmitting regions.

步骤S1408,对有机胶层进行显影,有机胶层与透光区域相对的区域形成倒梯形过孔。In step S1408, the organic adhesive layer is developed, and an inverted trapezoidal via hole is formed in an area of the organic adhesive layer opposite to the light-transmitting area.

图18为一个实施例中步骤S1406执行后形成的凹陷部的结构示意图,图19为一个实施例中图18中A-A向的剖面图,图20为一个实施例中图18中C-C向的剖面图。如图18-图20所示,在步骤S1408执行之后,有机胶层21内形成倒梯形过孔23。其中,倒梯形过孔23可以单独贯穿有机胶层21,使像素电路和发光单元通过ITO连接,如图20所示。倒梯形过孔23也可以与正梯形凹陷部22一起贯穿有机胶层21,使像素电路和发光单元通过ITO连接,如图19所示。FIG. 18 is a schematic structural diagram of the concave portion formed after step S1406 is performed in one embodiment, FIG. 19 is a cross-sectional view along A-A in FIG. 18 in one embodiment, and FIG. 20 is a cross-sectional view in C-C direction in FIG. 18 in one embodiment . As shown in FIGS. 18-20 , after step S1408 is performed, an inverted trapezoidal via hole 23 is formed in the organic adhesive layer 21 . Wherein, the inverted trapezoidal via hole 23 can pass through the organic adhesive layer 21 alone, so that the pixel circuit and the light-emitting unit are connected through ITO, as shown in FIG. 20 . The inverted trapezoidal via 23 can also penetrate the organic adhesive layer 21 together with the positive trapezoidal recess 22 to connect the pixel circuit and the light-emitting unit through ITO, as shown in FIG. 19 .

在实际应用中,在有机胶层远离像素驱动电路的一侧沉积ITO材料之后,ITO材料自动分成沉积在上表层上的第一ITO薄膜和沉积在凹陷部内的第二ITO薄膜。可以利用自动分离的第一ITO薄膜和第二ITO薄膜分别形成不同的转接线,并在ITO材料上沉积具有过孔的绝缘介质,实现不同像素电路和发光单元之间的连接,如图21所示。也可以利用多次形成的第二ITO薄膜形成多层转接线。In practical applications, after the ITO material is deposited on the side of the organic adhesive layer away from the pixel driving circuit, the ITO material is automatically divided into a first ITO film deposited on the upper surface layer and a second ITO film deposited in the recess. The first ITO film and the second ITO film that are automatically separated can be used to form different transition lines, and an insulating medium with via holes can be deposited on the ITO material to realize the connection between different pixel circuits and light-emitting units, as shown in Figure 21. Show. A multilayer patch cord may also be formed using the second ITO thin film formed multiple times.

基于同样的发明构思,本申请实施例还提供了一种用于实现上述所涉及的显示面板的制备方法制备的显示面板(图未示出)。显示面板包括衬底、像素驱动电路、有机胶层、第一ITO薄膜、第二ITO薄膜和发光层组。衬底包括主屏区、副屏区、以及位于主屏区和副屏区之间的过渡区。像素驱动电路包括设于主屏区和过渡区的多个像素电路。有机胶层位于衬底设有像素驱动电路的一侧,有机胶层内具有与像素电路一一对应连通的过孔,位于副屏区和过渡区的有机胶层的上表层内具有与对应的过孔连通的凹陷部。第一ITO薄膜位于上表层上。第二ITO薄膜位于凹陷部内,第一ITO薄膜和第二ITO薄膜隔离。发光层组位于有机胶层设有第一ITO薄膜的一侧,发光层组包括位于主屏区、副屏区和过渡区的多个发光单元,位于主屏区的发光单元通过第一ITO薄膜与位于主屏区的像素电路电连接,位于副屏区和过渡区的发光单元分别通过第一ITO薄膜和第二ITO薄膜中的一个与位于过渡区的像素电路电连接。Based on the same inventive concept, an embodiment of the present application also provides a display panel (not shown in the figure) prepared by implementing the above-mentioned method for manufacturing a display panel. The display panel includes a substrate, a pixel driving circuit, an organic adhesive layer, a first ITO thin film, a second ITO thin film and a light-emitting layer group. The substrate includes a primary screen area, a secondary screen area, and a transition area between the primary screen area and the secondary screen area. The pixel driving circuit includes a plurality of pixel circuits arranged in the main screen area and the transition area. The organic adhesive layer is located on the side of the substrate where the pixel driving circuit is arranged, and the organic adhesive layer has via holes that are connected with the pixel circuits in one-to-one correspondence, and the upper surface layer of the organic adhesive layer located in the sub-screen area and the transition area has corresponding holes. The recessed portion communicated by the via hole. The first ITO film is on the upper surface layer. The second ITO thin film is located in the recessed portion, and the first ITO thin film and the second ITO thin film are isolated. The light-emitting layer group is located on the side of the organic adhesive layer where the first ITO film is arranged, the light-emitting layer group includes a plurality of light-emitting units located in the main screen area, the sub-screen area and the transition area, and the light-emitting units located in the main screen area pass through the first ITO film. The pixel circuits in the main screen area are electrically connected, and the light emitting units in the sub-screen area and the transition area are respectively electrically connected with the pixel circuits in the transition area through one of the first ITO film and the second ITO film.

以上实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, all It is considered to be the range described in this specification.

以上所述实施例仅表达了本申请的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本申请专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干变形和改进,这些都属于本申请的保护范围。因此,本申请的保护范围应以所附权利要求为准。The above-mentioned embodiments only represent several embodiments of the present application, and the descriptions thereof are relatively specific and detailed, but should not be construed as a limitation on the scope of the patent of the present application. It should be pointed out that for those skilled in the art, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the scope of protection of the present application should be determined by the appended claims.

Claims (10)

1. A method of patterning ITO, the method comprising:
providing an organic glue layer;
patterning the organic adhesive layer, and forming a plurality of mutually spaced concave parts in the upper surface layer of the organic adhesive layer;
and depositing an ITO material on the organic glue layer, wherein the deposition thickness of the ITO material is smaller than the depth of the concave part, the ITO material deposited on the upper surface layer forms a first ITO thin film, the ITO material deposited in the concave part forms a second ITO thin film, and the first ITO thin film is isolated from the second ITO thin film.
2. The method according to claim 1, wherein the cross-sectional area of the recess perpendicular to the opening direction is gradually increased along the opening direction;
preferably, the recess is in the shape of a regular trapezoid.
3. The method of claim 1 or 2, wherein the depths of at least two of the recesses are different;
preferably, the recess includes at least a first recess and a second recess, and a depth of the second recess is greater than a depth of the first recess.
4. The method of claim 3, wherein patterning the organic glue layer to form a plurality of spaced apart recesses in an upper surface of the organic glue layer comprises:
exposing the organic adhesive layer through a mask, wherein the mask comprises a full-light-transmitting area, a semi-light-transmitting area and a non-light-transmitting area, and the organic adhesive layer comprises negative photoresist;
and developing the organic adhesive layer, wherein the first concave part is formed in the area of the organic adhesive layer opposite to the semi-light-transmitting area, and the second concave part is formed in the area of the organic adhesive layer opposite to the non-light-transmitting area.
5. The method of claim 3, wherein patterning the organic glue layer to form a plurality of spaced apart recesses in an upper surface of the organic glue layer comprises:
Patterning the organic adhesive layer, and forming a plurality of first sunken parts which are spaced from each other in the organic adhesive layer;
and etching part of the first concave part to form the second concave part.
6. The method of claim 1 or 2, wherein the ITO material is deposited to a thickness of 200 to 1000 angstroms.
7. The method according to claim 1 or 2, characterized in that the method further comprises:
and etching part of the first ITO film to expose the upper surface layer.
8. The method according to claim 1 or 2, characterized in that the method further comprises:
and patterning the organic glue layer, and forming a via hole in the organic glue layer.
9. A method for manufacturing a display panel, the method comprising:
providing a substrate provided with a pixel driving circuit, wherein the substrate comprises a main screen area, an auxiliary screen area and a transition area positioned between the main screen area and the auxiliary screen area, and the pixel driving circuit comprises a plurality of pixel circuits arranged in the main screen area and the transition area;
paving an organic adhesive layer on one side of the substrate, which is provided with the pixel driving circuit;
patterning the organic glue layer, forming through holes which are communicated with the pixel circuits in a one-to-one correspondence mode in the organic glue layer, and forming concave parts which are communicated with the corresponding through holes in the upper surface of the organic glue layer positioned in the auxiliary screen area and the transition area;
Depositing an ITO material on one side of the organic adhesive layer, which is far away from the pixel driving circuit, wherein the deposition thickness of the ITO material is smaller than the depth of the depressed part, the ITO material deposited on the upper surface layer forms a first ITO thin film, the ITO material deposited in the depressed part forms a second ITO thin film, and the first ITO thin film is isolated from the second ITO thin film; the light-emitting units positioned in the main screen area are electrically connected with the pixel circuits positioned in the main screen area through the first ITO thin film, and the light-emitting units positioned in the auxiliary screen area and the transition area are electrically connected with the pixel circuits positioned in the transition area through one of the first ITO thin film and the second ITO thin film respectively;
preferably, the cross-sectional area of the via hole communicated with the recessed portion, which is perpendicular to the opening direction, is gradually reduced along the opening direction;
preferably, the through hole communicated with the recess is in an inverted trapezoid shape.
10. A display panel, comprising:
the substrate comprises a main screen area, an auxiliary screen area and a transition area positioned between the main screen area and the auxiliary screen area;
the pixel driving circuit comprises a plurality of pixel circuits arranged in the main screen area and the transition area;
The organic glue layer is positioned on one side of the substrate, which is provided with the pixel driving circuit, through holes which are communicated with the pixel driving circuit in a one-to-one correspondence mode are formed in the organic glue layer, and concave parts which are communicated with the corresponding through holes are formed in the upper surface of the organic glue layer positioned in the auxiliary screen area and the transition area;
the first ITO film is positioned on the upper surface layer;
the second ITO film is positioned in the concave part, and the first ITO film is isolated from the second ITO film;
and the light-emitting layer group is positioned on one side of the first ITO film, and comprises a main screen area, an auxiliary screen area and a plurality of light-emitting units of the transition area, wherein the light-emitting units of the main screen area are electrically connected with pixel circuits of the main screen area through the first ITO film, and the light-emitting units of the auxiliary screen area and the transition area are electrically connected with the pixel circuits through one of the first ITO film and the second ITO film.
CN202210283820.0A 2022-03-22 2022-03-22 ITO (indium tin oxide) patterning method, preparation method of display panel and display panel Pending CN114678332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210283820.0A CN114678332A (en) 2022-03-22 2022-03-22 ITO (indium tin oxide) patterning method, preparation method of display panel and display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210283820.0A CN114678332A (en) 2022-03-22 2022-03-22 ITO (indium tin oxide) patterning method, preparation method of display panel and display panel

Publications (1)

Publication Number Publication Date
CN114678332A true CN114678332A (en) 2022-06-28

Family

ID=82074752

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210283820.0A Pending CN114678332A (en) 2022-03-22 2022-03-22 ITO (indium tin oxide) patterning method, preparation method of display panel and display panel

Country Status (1)

Country Link
CN (1) CN114678332A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020167009A1 (en) * 2001-05-14 2002-11-14 Samsung Electronics Co., Ltd Thin film transistor for liquid crystal display and method of manufacturing the same
CN102468450A (en) * 2010-11-17 2012-05-23 上海广电电子股份有限公司 Manufacturing method of organic light emitting display device
CN107403823A (en) * 2016-12-08 2017-11-28 广东聚华印刷显示技术有限公司 Pixel defining layer and its preparation method and application
CN110783481A (en) * 2019-08-30 2020-02-11 昆山国显光电有限公司 Display panel, display screen and display device
CN112436040A (en) * 2020-11-23 2021-03-02 安徽熙泰智能科技有限公司 Simplified preparation method of anode of silicon-based Micro OLED Micro-display device and pixel definition layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020167009A1 (en) * 2001-05-14 2002-11-14 Samsung Electronics Co., Ltd Thin film transistor for liquid crystal display and method of manufacturing the same
CN102468450A (en) * 2010-11-17 2012-05-23 上海广电电子股份有限公司 Manufacturing method of organic light emitting display device
CN107403823A (en) * 2016-12-08 2017-11-28 广东聚华印刷显示技术有限公司 Pixel defining layer and its preparation method and application
CN110783481A (en) * 2019-08-30 2020-02-11 昆山国显光电有限公司 Display panel, display screen and display device
CN112436040A (en) * 2020-11-23 2021-03-02 安徽熙泰智能科技有限公司 Simplified preparation method of anode of silicon-based Micro OLED Micro-display device and pixel definition layer

Similar Documents

Publication Publication Date Title
CN111769210B (en) Display substrate, manufacturing method thereof, and display device
CN104795434B (en) OLED pixel unit, transparent display and production method, display equipment
CN110308822B (en) Touch display panel and manufacturing method thereof
CN113725384A (en) Display panel and display device
CN113471386B (en) Display panel, manufacturing method thereof and display device
CN103293763B (en) Liquid crystal display device having a plurality of pixel electrodes
TW201022784A (en) Method of forming a color filter touch sensing substrate
CN107340928A (en) Touch-control display panel and its manufacture method, touch control display apparatus
CN111430443A (en) Organic light emitting display and manufacturing method thereof
CN106019751A (en) Array substrate and manufacturing method thereof and display device
CN215933642U (en) Display substrate, display panel and display device
CN108563364B (en) A touch screen, its manufacturing method, touch display panel and display device
WO2014139221A1 (en) Method for manufacturing color filter substrate, color filter substrate, and display device
CN104020902A (en) Touch screen panel and display device
US20240062715A1 (en) Display panel and display apparatus
CN110221473A (en) Color film substrate, manufacturing method thereof and display device
CN116367658A (en) Touch display panel and display device
CN116887638A (en) Display panel, preparation method and display device thereof
WO2024187605A1 (en) Display panel
CN103744556B (en) Touch display panel and manufacturing method thereof
CN108761999A (en) Mask plate and preparation method thereof, array substrate and preparation method thereof, display device
CN114678332A (en) ITO (indium tin oxide) patterning method, preparation method of display panel and display panel
CN110491906A (en) Display panel, display device and preparation method thereof
CN109739030A (en) A display panel and preparation method thereof, mask plate, and display device
CN113140605A (en) Display device and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination