CN114594357B - Drain-source voltage detection circuit and switching circuit of power tube - Google Patents
Drain-source voltage detection circuit and switching circuit of power tube Download PDFInfo
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- CN114594357B CN114594357B CN202011411893.0A CN202011411893A CN114594357B CN 114594357 B CN114594357 B CN 114594357B CN 202011411893 A CN202011411893 A CN 202011411893A CN 114594357 B CN114594357 B CN 114594357B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The application discloses a drain-source voltage detection circuit and a switching circuit of a power tube. The drain-source voltage detection circuit comprises a voltage sampling module, a compensation module and an output module, wherein the voltage sampling module is used for collecting drain-end voltage and source-end voltage of the power tube so as to obtain sampling current, the compensation module is used for obtaining compensation current according to the sampling current, and the output module is used for obtaining detection current representing drain-source voltage of the power tube according to the sampling current and the compensation current. The compensation module can compensate offset caused by gate-source voltage of the transistor in the voltage detection module, so that the compensated detection current accurately represents drain-source voltage of the power tube, and detection accuracy is improved.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a drain-source voltage detection circuit and a switching circuit of a power tube.
Background
In a power supply system, conversion of electric energy and stabilization of output voltage are achieved by controlling on and off of a switching type power tube, for example, by an IGBT (Insulated Gate Bipolar Transistor ) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, implemented by a Metal Oxide semiconductor field effect transistor).
Since the power tube needs to flow a large current, the working environment is complex, and many protection circuits are needed to protect the power tube, in many applications, it is generally necessary to detect the drain-source voltage of the power tube and convert the drain-source voltage into a current having a linear relation with the drain-source voltage difference, so that the power tube can safely operate and/or be used for other functions.
In the prior art, an operational amplifier circuit is used for detecting the drain-source voltage of the power tube, and the existing operational amplifier circuit can cause detection current to be out of balance due to the influence of load current of the operational amplifier on one hand, the detection precision is reduced, and on the other hand, the operational amplifier circuit is limited by a common mode working range, when the output voltage of the power tube is lower, the circuit can not work normally, and detection distortion is caused, so that the overall performance index of a system is influenced.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a drain-source voltage detection circuit and a switching circuit for a power tube, which can more simply realize high-precision detection of drain-source voltage of the power tube, and improve overall performance index of a system.
According to an aspect of the present invention, there is provided a drain-source voltage detection circuit of a power tube, including: the voltage sampling module is used for collecting the drain terminal voltage and the source terminal voltage of the power tube so as to obtain sampling current; the compensation module is used for obtaining compensation current according to the sampling current; and the output module is used for outputting detection current representing the drain-source voltage of the power tube according to the compensation current and the sampling current.
Optionally, the drain-source voltage detection circuit further includes: and the current mirror module is used for providing a first mirror current and a second mirror current to the compensation module and the output module respectively according to the sampling current.
Optionally, the voltage sampling module includes: the first end of the first detection resistor is connected with the drain end of the power tube; and the first end of the first transistor is connected with the second end of the first detection resistor, the control end of the first transistor is connected with the source end of the power tube, and the second end of the first transistor is used for outputting the sampling current.
Optionally, the compensation module includes: a second transistor, a first end of which is connected with a power supply voltage, and a second end of which receives the first mirror current; the first end of the second detection resistor is connected with the power supply voltage, and the second end of the second detection resistor is connected with the control end of the second transistor; and a third transistor having a first terminal connected to a common terminal of the second detection resistor and the second transistor, a control terminal connected to a second terminal of the second transistor, and a second terminal for outputting the compensation current.
Optionally, the output module includes: a fourth transistor, the first end of which is connected with the power supply voltage, the control end of which is connected with the second end and receives the second mirror current; and a fifth transistor having a first end connected to the power supply voltage, a control end connected to the control end of the fourth transistor, and a second end connected to the second end of the third transistor, wherein the fifth transistor superimposes the second mirror current and the compensation current to output the detection current.
Optionally, the current mirror module includes: a sixth transistor, the first end of which is connected with the control end to receive the sampling current, and the second end of which is grounded; a seventh transistor, the control end of which is connected with the control end of the sixth transistor, the first end is used for outputting the first mirror current, and the second end is grounded; and an eighth transistor, the control terminal is connected with the control terminal of the sixth transistor, the first terminal is used for outputting the second mirror current, and the second terminal is grounded.
Optionally, the resistances of the first detection resistor and the second detection resistor are equal, and the first transistor and the second transistor are selected from transistors with the same size.
Optionally, the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are respectively selected from P-type metal oxide semiconductor field effect transistors
Optionally, the sixth transistor, the seventh transistor and the eighth transistor are respectively selected from N-type metal oxide semiconductor field effect transistors.
According to another aspect of the present invention, there is provided a switching circuit including the drain-source voltage detection circuit of the power transistor.
The drain-source voltage detection circuit and the switch circuit of the power tube have the following beneficial effects.
The drain-source voltage detection circuit comprises a voltage sampling module, a compensation module and an output module, wherein the voltage sampling module is used for collecting drain-end voltage and source-end voltage of the power tube so as to obtain sampling current, the compensation module is used for obtaining compensation current according to the sampling current, and the output module is used for obtaining detection current representing drain-source voltage of the power tube according to the sampling current and the compensation current. The compensation module provided by the embodiment of the invention can compensate the offset caused by the gate-source voltage of the transistor in the voltage detection module, so that the compensated detection current accurately represents the drain-source voltage of the power tube, and the detection accuracy is improved. Furthermore, compared with the existing detection circuit, the drain-source voltage detection circuit provided by the invention only adopts a single transistor for detection, so that the structure of the detection circuit is simplified, and the circuit cost is reduced.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the present invention with reference to the accompanying drawings, in which:
Fig. 1 is a schematic circuit diagram of a drain-source voltage detection circuit of a conventional power tube;
Fig. 2 shows a schematic circuit diagram of a drain-source voltage detection circuit of a power tube according to an embodiment of the invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. The same reference numbers will be used throughout the drawings to refer to the same or like parts. For clarity, the various features of the drawings are not drawn to scale.
It should be appreciated that in the following description, a "circuit" may include a single or multiple combined hardware circuits, programmable circuits, state machine circuits, and/or elements capable of storing instructions for execution by the programmable circuits. When an element or circuit is referred to as being "connected to" another element or being "connected between" two nodes, it can be directly coupled or connected to the other element or intervening elements may be present, the connection between the elements may be physical, logical, or a combination thereof. In contrast, when an element is referred to as being "directly coupled to" or "directly connected to" another element, it means that there are no intervening elements present between the two.
The invention will be further described with reference to the drawings and examples.
Fig. 1 shows a schematic circuit diagram of a drain-source voltage detection circuit of a conventional power tube. As shown in fig. 1, the drain and source terminals of the power transistor P1 to be tested are connected to the input voltage Vin and the output voltage Vout, respectively, and the drain-source voltage detection circuit 100 includes resistors R1 and R2, transistors MP1 to MP3, and transistors MN1 and MN2. The resistor R1, the transistor MP1 and the transistor MN1 are sequentially connected between the drain end of the power tube P1 to be tested and the ground, and the resistor R2, the transistor MP2 and the transistor MN2 are sequentially connected between the source end of the power tube P1 to be tested and the ground. The size ratio of the transistor MP1 to the transistor MP2 is 1:1, the transistor MP1 and the transistor MP2 are connected by common gate, the transistor MN1 and the transistor MN2 are connected by common gate-common source, and the gate terminals of the two are connected with the bias voltage Vbias. The gate terminal of the transistor MP3 is connected to the node B between the transistor MP2 and the transistor MN2, and the source terminal is connected to the node a between the resistor R1 and the transistor MP 1.
When the drain-source voltage detection circuit 100 operates normally, the transistor MP1 and the transistor MP2 are respectively used for detecting the input voltage Vin and the output voltage Vout, and converting the voltage difference between them into a current, thereby obtaining a detection current Isen. Wherein the currents flowing through the transistor MP1 and the transistor MP2 are equal, and the currents flowing through the transistor MP1 and the transistor MP2 are equal to the mirror current Ia provided by the transistor MN1 and the transistor MN2, that is:
i MP1＝IMP2 =ia formula 1
The source voltages of the transistor MP1 and the transistor MP2 are equal through the negative feedback connection of the transistor MP3, that is, the source voltage of the transistor MP2 is equal to:
V1=vout-ia×r2=va formula 2
Where V1 represents the source voltage of transistor MP2, ia represents the mirror currents provided by transistors MN1 and MN2, and VA represents the voltage at node a.
Also because the current flowing through resistor R1 is:
i R1 = (Vin-VA)/R1 formula 3
Assuming that the resistances of the resistor R1 and the resistor R2 (i.e., r1=r2=r) are equal, the current flowing through R1 can be obtained by combining equation 2 and equation 3 as:
I R1 = (Vin-vout+ia×r2)/r1= (Vin-Vout)/r+ia formula 4
Again because the current through transistor MP3 is equal to:
I MP3＝IR1-IMP1 equation 5
As can be obtained by combining the formula 1 and the formula 4, the current flowing through the transistor MP3, i.e., the detection current Isen is:
Isen= (Vin-Vout)/R equation 6
However, to make the drain-source power supply detection circuit 100 work normally, all transistors in the circuit need to work in a saturation region, when the output voltage Vout is lower than the sum of the drain-source saturation voltages of the transistor MP2 and the transistor MN1, the transistor MN2 will work in a linear region, and as the output voltage Vout continues to decrease, the drain voltage of the transistor MN2 decreases to 0, the transistor MP2 is turned off, and the detection current Isen is equal to:
isen= (Vin-VGS)/R formula 7
Where VGS represents the gate-source voltage of transistor MP 3. As can be seen from the above description, the drain-source voltage detection circuit 100 in the prior art is limited by the common mode operating range, and when the output voltage Vout is low, the circuit may not work normally, and the accuracy of the drain-source voltage detection is reduced, thereby affecting the overall performance index of the system.
The embodiment of the invention provides a drain-source voltage detection circuit with a simple structure, which adopts a single transistor for detection, simplifies the structure of the detection circuit and reduces the circuit cost. Meanwhile, the drain-source voltage detection circuit also comprises a compensation module, wherein the compensation module is used for compensating offset caused by the gate-source voltage of the detection transistor, and is beneficial to improving the detection precision.
Fig. 2 shows a schematic circuit diagram of a drain-source voltage detection circuit of a power tube according to an embodiment of the invention. In fig. 2, a power tube P1 is a main output tube of the chip, and is connected between an input terminal and an output terminal. The power transistor P1 is, for example, an N-type MOSFET, and has a drain terminal connected to an input terminal of the chip to receive an input voltage Vin, and a source terminal connected to an output terminal of the chip to provide an output voltage Vout to a subsequent circuit. The gate driving signal Vgate is used to control the on and off of the power transistor P1 to control the power transfer from the chip input terminal to the chip output terminal.
The drain-source voltage detection circuit 200 includes a voltage detection module 210, a current mirror module 220, a compensation module 230, and an output module 240.
The voltage detection module 210 Is connected to the drain terminal and the source terminal of the power tube P1, and Is configured to collect the drain terminal voltage and the source terminal voltage of the power tube, respectively, so as to obtain a sampling current Is1. The current mirror module 220 Is configured to generate a first image current Is2 and a second image current Is3 according to the sampling current Is1. The compensation module 230 Is configured to obtain the compensation current Icom according to the first image current Is2 related to the sampling current Is1. The output module 240 Is configured to superimpose the compensation current Icom and the second image current Is3 related to the sampling current Is1 to obtain a detection current Isen that characterizes the drain-source voltage of the power transistor P1.
Further, the voltage detection module 210 includes a detection resistor Rs1 and a transistor MP1. The first end of the detection resistor Rs1 Is connected with the drain end of the power tube P1, the second end of the detection resistor Rs1 Is connected with the first end of the transistor MP1, the control end of the transistor MP1 Is connected with the source end of the power tube P1, and the second end Is used for outputting the sampling current IS1.
The current mirror module 220 includes transistors MN1-MN3. The first terminal of the transistor MN1 Is connected to the second terminal of the transistor MP1 to receive the sampling current Is1, and the second terminal Is grounded. The control terminal of the transistor MN2 Is connected to the control terminal of the transistor MN1, and the first terminal Is configured to output the first mirror current Is2, and the second terminal Is grounded. The control terminal of the transistor MN3 Is connected to the control terminal of the transistor MN1, and the first terminal Is configured to output the second mirror current Is3, and the second terminal Is grounded. The transistors MN1-MN3 form a current mirror, so that the sampling current Is1 Is mirrored in equal proportion to obtain a first mirrored current Is2 and a second mirrored current Is3.
The compensation module 230 includes a transistor MP2, a transistor MP3, and a sense resistor Rs2. The first end of the transistor MP2 Is connected with the power supply voltage VDD, the second end of the transistor MP2 Is connected with the first end of the transistor MN2 to receive the first mirror current IS2, the first end of the detection resistor Rs2 Is connected with the power supply voltage VDD, the second end of the transistor MP2 Is connected with the control end of the transistor MP2, the first end of the transistor MP3 Is connected with the common end of the detection resistor Rs2 and the transistor MP2, the control end of the transistor MP2 Is connected with the second end of the transistor MP2, and the second end Is used for outputting the compensation current Icom.
The output module 240 includes transistors MP4 and MP5, the first terminal of the transistor MP4 Is connected to the power voltage VDD, the control terminal and the second terminal are connected to the first terminal of the transistor MN3 to receive the second mirror current Is3, the first terminal of the transistor MP5 Is connected to the power voltage VDD, the control terminal Is connected to the control terminal of the transistor MP4, and the second terminal Is connected to the second terminal of the transistor MP 3. Transistors MP4 and MP5 form a current mirror so that the second mirror current Is3 Is mirrored in equal proportion and superimposed with the compensation current Icom to obtain the sense current Isen.
The following describes the operation principle of the drain-source voltage detection circuit according to the embodiment of the present invention in detail with reference to fig. 2.
The transistor MP1 and the detection resistor Rs1 sample the power transistor P1 and convert the detected voltage into a sampling current Is1:
is1= (Vin-Vout-VGS 1)/Rs 1 equation 8
Where VGS1 represents the gate-source voltage of the transistor MP1, and Rs1 represents the resistance of the detection resistor Rs 1. Since the transistor MP2, the transistor MP3 and the sense resistor Rs2 form a local negative feedback structure, the compensation current Icom is:
Icom=VGS2/Rs 2 equation 9
Where VGS2 represents the gate-source voltage of the transistor MP2, and Rs2 represents the resistance of the detection resistor Rs 2. Because the transistors MN1-MN3 form a current mirror, and the sampling current Is1 Is mirrored in equal proportion to obtain a first mirrored current Is2 and a second mirrored current Is3, namely:
Is1=is2=is3 equation 10
Also, since the transistor MP5 superimposes the second mirror current Is3 and the compensation current Icom to obtain the detection current Isen, that Is:
isen=icom+is3 equation 11
As can be obtained by combining equation 8-equation 11, the detected current Isen is:
Isen= (Vin-Vout-VGS 1)/Rs 1+VGS2/Rs2 equation 12
Also, because transistors MP1 and MP2 are identical in type and size, and the currents flowing through them are identical, VGS 1=vgs 2. Meanwhile, the resistance values of the resistors Rs1 and Rs2 are equal to each other, so that the method can be used for obtaining:
Isen= (Vin-Vout)/Rs 1 equation 13
As can be seen from equation 13, the compensation module 230 of the present embodiment can compensate for the offset caused by the gate-source voltage of the transistor MP1, so that the compensated detection current accurately represents the voltage difference between the drain terminal voltage and the source terminal voltage of the power transistor P1, which is beneficial to improving the detection accuracy.
In the above embodiments, the transistors MP1 to MP5 are, for example, P-Metal-Oxide-Semiconductor Field-Effect Transistor (P-type Metal Oxide semiconductor field effect transistor), and the first terminal, the second terminal and the control terminal of the P-type MOSFET are respectively a source, a drain and a gate.
The transistors MN1 to MN3 are, for example, (N-Metal-Oxide-Semiconductor Field-Effect Transistor, N-type Metal Oxide semiconductor field effect transistors), and the first terminal, the second terminal and the control terminal of the N-type MOSFET are respectively a drain, a source and a gate.
In summary, in the drain-source voltage detection circuit and the switch circuit of the power tube according to the embodiments of the present invention, the drain-source voltage detection circuit includes a voltage sampling module, a compensation module and an output module, where the voltage sampling module is configured to collect a drain-end voltage and a source-end voltage of the power tube to obtain a sampling current, the compensation module is configured to obtain a compensation current according to the sampling current, and the output module obtains a detection current representing the drain-source voltage of the power tube according to the sampling current and the compensation current. The compensation module provided by the embodiment of the invention can compensate the offset caused by the gate-source voltage of the transistor in the voltage detection module, so that the compensated detection current accurately represents the drain-source voltage of the power tube, and the detection accuracy is improved. Furthermore, compared with the existing detection circuit, the drain-source voltage detection circuit provided by the invention only adopts a single transistor for detection, so that the structure of the detection circuit is simplified, and the circuit cost is reduced.
It should be noted that although the device is described herein as an N-channel or P-channel device, or an N-type or P-type doped region, it will be appreciated by those of ordinary skill in the art that complementary devices may be implemented in accordance with the present invention. It will be appreciated by those of ordinary skill in the art that conductivity type refers to a mechanism by which electrical conduction occurs, such as by hole or electron conduction, so conductivity type does not relate to doping concentration but rather to doping type, such as P-type or N-type. It will be appreciated by those of ordinary skill in the art that the terms "during", "when" and "when … …" as used herein in relation to circuit operation are not strict terms indicating an action that occurs immediately upon the start of a start-up action, but rather there may be some small but reasonable delay or delays between it and the reaction action (reaction) initiated by the start-up action, such as various transmission delays and the like. The word "about" or "substantially" is used herein to mean that an element value (element) has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there is always a slight deviation such that the value or position is difficult to strictly assume the stated value. It has been well established in the art that deviations of at least ten percent (10%) (at least twenty percent (20%)) for semiconductor doping concentrations are reasonable deviations from the exact ideal targets described. When used in connection with a signal state, the actual voltage value or logic state (e.g., "or") of the signal depends on whether positive or negative logic is used.
Furthermore, it should be noted that in this document relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Embodiments in accordance with the present invention, as described above, are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various modifications as are suited to the particular use contemplated. The scope of the invention should be determined by the following claims.
Claims (7)
1. A drain-source voltage detection circuit for a power tube, comprising:
the voltage sampling module is used for collecting drain terminal voltage and source terminal voltage of the power tube to obtain sampling current, the voltage sampling module comprises a first detection resistor and a first transistor, a first end of the first detection resistor is connected with the drain terminal of the power tube, a first end of the first transistor is connected with a second end of the first detection resistor, a control end of the first transistor is connected with the source terminal of the power tube, and a second end of the first transistor is used for outputting the sampling current;
the compensation module is used for obtaining compensation current according to the sampling current; and
The output module is used for outputting detection current representing the drain-source voltage of the power tube according to the compensation current and the sampling current,
Wherein, drain-source voltage detection circuit still includes:
a current mirror module for providing a first image current and a second image current to the compensation module and the output module, respectively, according to the sampling current,
The compensation module includes:
a second transistor, a first end of which is connected with a power supply voltage, and a second end of which receives the first mirror current;
the first end of the second detection resistor is connected with the power supply voltage, and the second end of the second detection resistor is connected with the control end of the second transistor; and
And a third transistor, a first end of which is connected with a common end of the second detection resistor and the second transistor, a control end of which is connected with a second end of the second transistor, and the second end is used for outputting the compensation current.
2. The drain-source voltage detection circuit of claim 1, wherein the output module comprises:
A fourth transistor, the first end of which is connected with the power supply voltage, the control end of which is connected with the second end and receives the second mirror current; and
A fifth transistor having a first end connected to the power supply voltage, a control end connected to the control end of the fourth transistor, a second end connected to the second end of the third transistor,
Wherein the fifth transistor superimposes the second mirror current and the compensation current to output the detection current.
3. The drain-source voltage detection circuit of claim 1, wherein the current mirror module comprises:
A sixth transistor, the first end of which is connected with the control end to receive the sampling current, and the second end of which is grounded;
a seventh transistor, the control end of which is connected with the control end of the sixth transistor, the first end is used for outputting the first mirror current, and the second end is grounded; and
And the control end of the eighth transistor is connected with the control end of the sixth transistor, the first end is used for outputting the second mirror current, and the second end is grounded.
4. The drain-source voltage detection circuit according to claim 1, wherein the first detection resistor and the second detection resistor have equal resistance values, and the first transistor and the second transistor are selected from transistors of the same size.
5. The drain-source voltage detection circuit according to claim 2, wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are each selected from a P-type metal oxide semiconductor field effect transistor.
6. The drain-source voltage detection circuit according to claim 3, wherein the sixth transistor, the seventh transistor, and the eighth transistor are each selected from an N-type metal oxide semiconductor field effect transistor.
7. A switching circuit comprising the drain-source voltage detection circuit of the power tube according to any one of claims 1 to 6.
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| CN202011411893.0A CN114594357B (en) | 2020-12-03 | 2020-12-03 | Drain-source voltage detection circuit and switching circuit of power tube |
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| CN202011411893.0A CN114594357B (en) | 2020-12-03 | 2020-12-03 | Drain-source voltage detection circuit and switching circuit of power tube |
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| US4820968A (en) * | 1988-07-27 | 1989-04-11 | Harris Corporation | Compensated current sensing circuit |
| US7525333B1 (en) * | 2006-02-17 | 2009-04-28 | Semiconductor Components Industries, Llc | Current sense circuit |
| US9791480B2 (en) * | 2013-05-21 | 2017-10-17 | Analog Devices Global | Current sensing of switching power regulators |
| CN105988499B (en) * | 2015-02-16 | 2019-08-16 | 恩智浦美国有限公司 | Source side voltage regulator |
| US9804205B2 (en) * | 2015-04-27 | 2017-10-31 | Power Integrations, Inc. | Current sense ratio compensation |
| CN109617410B (en) * | 2018-12-28 | 2024-01-19 | 中国电子科技集团公司第五十八研究所 | Novel floating voltage detection circuit |
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