CN114556600B - Thermoelectric conversion element module and method for manufacturing thermoelectric conversion element module - Google Patents
Thermoelectric conversion element module and method for manufacturing thermoelectric conversion element module Download PDFInfo
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- CN114556600B CN114556600B CN201980101378.1A CN201980101378A CN114556600B CN 114556600 B CN114556600 B CN 114556600B CN 201980101378 A CN201980101378 A CN 201980101378A CN 114556600 B CN114556600 B CN 114556600B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
The thermoelectric conversion element module according to the present application includes: a first insulating substrate; the second insulating substrate is arranged above the first insulating substrate; an n-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate; a p-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate; a first electrode provided on a back surface of the second insulating substrate, which is a surface facing the first insulating substrate, and electrically connecting an upper end side of the n-type thermoelectric element and an upper end side of the p-type thermoelectric element; a second electrode disposed on the upper surface of the first insulating substrate and electrically connected to the lower end side of the n-type thermoelectric element; a third electrode disposed on the upper surface of the first insulating substrate and electrically connected to the lower end side of the p-type thermoelectric element; the first metal layer is arranged below the first insulating substrate; the first insulating layer is arranged below the first metal layer; the second metal layer is arranged on the second insulating substrate; and a second insulating layer disposed on the second metal layer.
Description
Technical Field
The present invention relates to a thermoelectric conversion element module and a method for manufacturing the thermoelectric conversion element module.
Background
Patent document 1 discloses a thermoelectric module. The thermoelectric module has opposing first and second ceramic substrates. First and second electrodes are bonded to respective inner surfaces of the first and second ceramic substrates. The thermoelectric element is interposed between the first and second electrodes. The thermoelectric element is bonded to the first and second electrodes.
Patent document 1: japanese patent application laid-open No. 2012-44133
In the process of manufacturing the thermoelectric conversion element module as described in patent document 1, a void or a crack may be generated in the ceramic substrate. As a result, a path penetrating the ceramic substrate in the thickness direction may be formed. The thermoelectric conversion element module is applied with a voltage when actually operating in the market. Thus, electromigration may occur in a path generated by a void or a crack. In this case, the front and back of the ceramic substrate may be electrically connected to the external circuit formed by the thermoelectric element via the ceramic substrate. Therefore, there is a possibility that the thermoelectric conversion element module cannot function.
Disclosure of Invention
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a thermoelectric conversion element module and a method for manufacturing the thermoelectric conversion element module, which can prevent a circuit formed by thermoelectric elements from being electrically connected to the outside via an insulating substrate.
The thermoelectric conversion element module according to the present application includes: a first insulating substrate; the second insulating substrate is arranged above the first insulating substrate; an n-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate; a p-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate; a first electrode provided on a back surface of the second insulating substrate, which is a surface facing the first insulating substrate, and electrically connecting an upper end side of the n-type thermoelectric element and an upper end side of the p-type thermoelectric element; a second electrode disposed on the upper surface of the first insulating substrate and electrically connected to the lower end side of the n-type thermoelectric element; a third electrode disposed on the upper surface of the first insulating substrate and electrically connected to the lower end side of the p-type thermoelectric element; a first metal layer disposed under the first insulating substrate; the first insulating layer is arranged below the first metal layer; the second metal layer is arranged on the second insulating substrate; and a second insulating layer disposed on the second metal layer.
The thermoelectric conversion element module according to the present application includes: a first insulating substrate; the second insulating substrate is arranged above the first insulating substrate; an n-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate; a p-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate; a first electrode provided on a back surface of the second insulating substrate, which is a surface facing the first insulating substrate, and electrically connecting an upper end side of the n-type thermoelectric element and an upper end side of the p-type thermoelectric element; a second electrode disposed on the upper surface of the first insulating substrate and electrically connected to the lower end side of the n-type thermoelectric element; a third electrode disposed on the upper surface of the first insulating substrate and electrically connected to the lower end side of the p-type thermoelectric element; the first insulating layer is arranged below the first insulating substrate; and a second insulating layer disposed on the second insulating substrate, wherein the first insulating substrate and the second insulating substrate are ceramic substrates, and the first insulating layer and the second insulating layer are unfired.
In the method for manufacturing a thermoelectric element module according to the present application, an n-type thermoelectric element and a p-type thermoelectric element are provided between a first insulating substrate and the second insulating substrate provided above the first insulating substrate, an upper end side of the n-type thermoelectric element and an upper end side of the p-type thermoelectric element are electrically connected to each other through a first electrode provided on a rear surface, which is a surface of the second insulating substrate facing the first insulating substrate, a second electrode provided on an upper surface of the first insulating substrate is electrically connected to a lower end side of the n-type thermoelectric element, and a third electrode provided on the upper surface of the first insulating substrate is electrically connected to a lower end side of the p-type thermoelectric element.
In the thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the present application, the first insulating layer and the second insulating layer are provided below the first insulating substrate and above the second insulating substrate, respectively. By the first insulating layer and the second insulating layer, the circuit formed by the thermoelectric element can be prevented from being electrically connected to the outside via the insulating substrate.
Drawings
Fig. 1 is a cross-sectional view of a thermoelectric conversion element module according to embodiment 1.
Fig. 2 is a cross-sectional view showing a state in which the thermoelectric conversion element module according to embodiment 1 is mounted on a semiconductor device.
Fig. 3 is a cross-sectional view of the thermoelectric conversion element module according to embodiment 2.
Fig. 4 is a cross-sectional view of a thermoelectric conversion element module according to embodiment 3.
Detailed Description
A thermoelectric conversion element module and a method for manufacturing the same according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repetitive description thereof may be omitted.
Embodiment 1
Fig. 1 is a cross-sectional view of a thermoelectric conversion element module 100 according to embodiment 1. The thermoelectric conversion element module 100 has a first insulating substrate 10 and a second insulating substrate 20 disposed above the first insulating substrate 10. The first insulating substrate 10 is opposed to the second insulating substrate 20.
The first insulating substrate 10 and the second insulating substrate 20 are ceramic substrates formed by firing, for example. The first insulating substrate 10 and the second insulating substrate 20 are formed of, for example, green sheets (GREEN SHEET). The first insulating substrate 10 and the second insulating substrate 20 may be formed of a plurality of stacked green sheets, respectively. The first insulating substrate 10 and the second insulating substrate 20 are formed of, for example, an alumina sintered body or an aluminum nitride sintered body. The thickness of the first insulating substrate 10 and the second insulating substrate 20 is, for example, 0.15 to 0.25mm.
A plurality of n-type thermoelectric elements 31a to 31c and a plurality of p-type thermoelectric elements 32a to 32c are provided between the first insulating substrate 10 and the second insulating substrate 20. The first insulating substrate 10 and the second insulating substrate 20 sandwich the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c. The first insulating substrate 10 and the second insulating substrate 20 are support members for the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c.
The plurality of n-type thermoelectric elements 31a to 31c and the plurality of p-type thermoelectric elements 32a to 32c are respectively vertically erected from the first insulating substrate 10 and the second insulating substrate 20. The plurality of n-type thermoelectric elements 31a to 31c are alternately arranged with the plurality of p-type thermoelectric elements 32a to 32 c. The number of n-type thermoelectric elements 31a to 31c and p-type thermoelectric elements 32a to 32c provided in the thermoelectric conversion element module 100 may be one or more.
Electrodes 41a to 41d are provided on the upper surface of the first insulating substrate 10. The second insulating substrate 20 is provided with electrodes 42a to 42c on the back surface, which is the surface facing the first insulating substrate 10. The n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c are provided between the electrodes 41a to 41d and the electrodes 42a to 42c.
The electrode 41a is electrically connected to the lower end side of the n-type thermoelectric element 31 a. The electrode 42a electrically connects the upper end side of the n-type thermoelectric element 31a with the upper end side of the p-type thermoelectric element 32 a. The electrode 41b electrically connects the lower end side of the p-type thermoelectric element 32a with the lower end side of the n-type thermoelectric element 31 b. The electrode 42b electrically connects the upper end side of the n-type thermoelectric element 31b with the upper end side of the p-type thermoelectric element 32 b. The electrode 41c electrically connects the lower end side of the p-type thermoelectric element 32b with the lower end side of the n-type thermoelectric element 31 c. The electrode 42c electrically connects the upper end side of the n-type thermoelectric element 31c with the upper end side of the p-type thermoelectric element 32 c. The electrode 41d is electrically connected to the lower end side of the p-type thermoelectric element 32 c.
The electrodes 41a to 41d and the electrodes 42a to 42c alternately connect the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c in series. Thus, the electrodes 41a to 41d, the electrodes 42a to 42c, the n-type thermoelectric elements 31a to 31c, and the p-type thermoelectric elements 32a to 32c form a circuit.
The n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c are bonded to the electrodes 41a to 41d and the electrodes 42a to 42c by, for example, solder.
A first insulating layer 12 is provided under the first insulating substrate 10. A second insulating layer 22 is provided over the second insulating substrate 20. The first insulating layer 12 and the second insulating layer 22 are formed of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon oxynitride, titanium nitride, or a nonconductive organic material. The first insulating layer 12 and the second insulating layer 22 may be formed of an insulator such as an alumina sintered body or an aluminum nitride sintered body.
A metal layer 14 is provided under the first insulating layer 12. Further, a metal layer 24 is provided over the second insulating layer 22. The metal layers 14, 24 are formed of gold, for example, as the outermost layers. The metal layers 14 and 24 are used when welding members disposed above or below the thermoelectric conversion element module 100. In addition, instead of welding, resin-based bonding may be used. In this case, the metal layers 14 and 24 may not be provided.
Next, a method of manufacturing the thermoelectric conversion element module 100 will be described. First, the first insulating substrate 10 and the second insulating substrate 20 are fired. Thereafter, a first insulating layer 12 is provided on the surface of the first insulating substrate 10 opposite to the upper surface. In addition, a second insulating layer 22 is provided on the surface of the second insulating substrate 20 opposite to the back surface.
The first insulating layer 12 is formed by, for example, forming the first insulating substrate 10 by firing a green sheet laminate, and then sputtering or vapor deposition is performed on the first insulating substrate 10. The second insulating layer 22 is formed by, for example, firing the green sheet laminate to form the second insulating substrate 20, and then sputtering or vapor deposition is performed on the second insulating substrate 20. Therefore, the first insulating layer 12 and the second insulating layer 22 are not fired. The thicknesses of the first insulating layer 12 and the second insulating layer 22 may be any thicknesses that can be formed by sputtering or vapor deposition.
Next, the metal layer 14 is formed on the surface of the first insulating layer 12 opposite to the first insulating substrate 10. In addition, a metal layer 24 is formed on the second insulating layer 22 on the opposite side of the second insulating substrate 20.
Next, an n-type thermoelectric element and a p-type thermoelectric element are provided between the first insulating substrate 10 and the second insulating substrate 20. At this time, the electrode 41a is electrically connected to the lower end side of the n-type thermoelectric element 31 a. The upper end side of the n-type thermoelectric element 31a is electrically connected to the upper end side of the p-type thermoelectric element 32a via the electrode 42 a. The lower end side of the p-type thermoelectric element 32a is electrically connected to the lower end side of the n-type thermoelectric element 31b via the electrode 41 b. The upper end side of the n-type thermoelectric element 31b is electrically connected to the upper end side of the p-type thermoelectric element 32b via the electrode 42 b. The lower end side of the p-type thermoelectric element 32b is electrically connected to the lower end side of the n-type thermoelectric element 31c via the electrode 41 c. The upper end side of the n-type thermoelectric element 31c is electrically connected to the upper end side of the p-type thermoelectric element 32c via the electrode 42 c. The electrode 41d is electrically connected to the lower end side of the p-type thermoelectric element 32 c.
Fig. 2 is a cross-sectional view showing a state in which the semiconductor device 50 is mounted on the thermoelectric conversion element module 100 according to embodiment 1. The semiconductor device 50 includes a substrate 51 and a semiconductor chip 52 provided on an upper surface of the substrate 51. The semiconductor device 50 is disposed above the thermoelectric conversion element module 100 via the metal block 60. The metal block 60 is bonded to the metal layer 24, for example, by solder. The metal block 60 may not be provided.
A power supply 70 is connected between the electrode 41a and the electrode 41 d. Thereby, a closed circuit of the plurality of thermoelectric elements is formed. In the closed circuit, a direct current flows in the direction indicated by the arrow in fig. 2. Thus, in each of the n-type thermoelectric elements 31a to 31c and the p-type thermoelectric elements 32a to 32c, carriers move in a direction from the second insulating substrate 20 toward the first insulating substrate 10. As the carriers move, heat is absorbed from the second insulating substrate 20, and heat is radiated to the first insulating substrate 10. Therefore, the semiconductor device 50 can be cooled. In addition, by flowing the current in the opposite direction, the semiconductor device 50 can be heated.
In this way, the thermoelectric conversion element module 100 uses the seebeck effect or the peltier effect as a cooling or heating module.
In the ceramic substrate, a path penetrating the substrate in the thickness direction may be generated due to a void or a crack. In particular, ceramic substrates formed from green sheets tend to be prone to voids or cracks during the manufacturing process. When a voltage is applied to such a ceramic substrate, electromigration may occur in a path generated by a void or a crack. In this case, the front and back of the ceramic substrate may be electrically connected to the external circuit formed by the thermoelectric element via the ceramic substrate. Therefore, there is a possibility that the thermoelectric conversion element module cannot function.
Conduction between the front and back of the ceramic substrate does not normally occur during manufacturing but mostly occurs during actual operation in the market. In addition, the occurrence rate of such defects is generally low. Therefore, it is often difficult to exclude the thermoelectric conversion element module in advance, which may cause a failure.
In contrast, in the present embodiment, the first insulating layer 12 is provided on the surface of the first insulating substrate 10 facing the surface on which the electrodes 41a to 41d are provided. Similarly, the second insulating layer 22 is provided on the surface of the second insulating substrate 20 facing the surface on which the electrodes 42a to 42c are provided. Therefore, even when the first insulating substrate 10 or the second insulating substrate 20 is formed with a path penetrating in the thickness direction, the electric circuit formed by the thermoelectric element can be suppressed from being electrically connected to the outside. Therefore, in a state where the thermoelectric conversion element module 100 is mounted on a product and operated on the market, the function of the thermoelectric conversion element module 100 can be reliably realized.
In particular, in the present embodiment, the first insulating layer 12 and the second insulating layer 22 are formed after firing the first insulating substrate 10 and the second insulating substrate 20. Thus, the first insulating layer 12 and the second insulating layer 22 are not fired. In the first insulating layer 12 and the second insulating layer 22, occurrence of voids or cracks can be suppressed as compared with the first insulating substrate 10 and the second insulating substrate 20 after firing.
In addition, voids or cracks are not generally generated in the insulating layer formed by sputtering or vapor deposition. Therefore, formation of the first insulating layer 12 and the second insulating layer 22 by sputtering or vapor deposition can suppress occurrence of voids or cracks.
The first insulating layer 12 and the second insulating layer 22 may be formed of the same material as the first insulating substrate 10 or the second insulating substrate 20, as long as occurrence of voids or cracks can be suppressed as compared with the first insulating substrate 10 or the second insulating substrate 20. For example, the first insulating layer 12 and the second insulating layer 22, and the first insulating substrate 10 and the second insulating substrate 20 may be formed of the same material having high thermal conductivity. This can improve the temperature adjustment function of the thermoelectric conversion element module 100.
The first insulating layer 12 may be formed of a material less prone to void or crack formation than the first insulating substrate 10. Similarly, the second insulating layer 22 may be formed of a material less prone to void or crack formation than the second insulating substrate 20.
In the present embodiment, the first insulating layer 12 and the second insulating layer 22 are formed after firing the first insulating substrate 10 and the second insulating substrate 20. Therefore, the firing temperatures of the first insulating layer 12 and the second insulating layer 22 are not limited by the firing temperatures of the first insulating substrate 10 and the second insulating substrate 20. For example, in the present embodiment, the firing temperature of the first insulating layer 12 may be equal to or lower than the firing temperature of the first insulating substrate 10. The firing temperature of the second insulating layer 22 may be equal to or lower than the firing temperature of the second insulating substrate 20. In this way, in the present embodiment, the degree of freedom in the materials of the first insulating layer 12 and the second insulating layer 22 can be improved.
These modifications can be suitably applied to the thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the following embodiments. Note that, the thermoelectric conversion element module and the method for manufacturing the thermoelectric conversion element module according to the following embodiment are different from embodiment 1 because they share much common points with embodiment 1.
Embodiment 2
Fig. 3 is a cross-sectional view of the thermoelectric conversion element module 200 according to embodiment 2. The thermoelectric conversion element module 200 includes a first insulating substrate 210a and a second insulating substrate 220a. As in embodiment 1, a circuit is formed between the first insulating substrate 210a and the second insulating substrate 220a by the electrodes 41a to 41d, the electrodes 42a to 42c, the n-type thermoelectric elements 31a to 31c, and the p-type thermoelectric elements 32a to 32c.
A first insulating layer 212a is disposed under the first insulating substrate 210 a. A third insulating substrate 210b is disposed under the first insulating layer 212a. A third insulating layer 212b is disposed under the third insulating substrate 210b. Below the third insulating layer 212b, the metal layer 14 is provided.
A second insulating layer 222a is disposed over the second insulating substrate 220 a. A fourth insulating substrate 220b is disposed over the second insulating layer 222a. A fourth insulating layer 222b is disposed over the fourth insulating substrate 220b. A metal layer 24 is provided over the fourth insulating layer 222b.
In this embodiment, a plurality of insulating substrates are stacked. Further, an insulating layer is provided on the surface of each insulating substrate opposite to the thermoelectric element. By stacking a plurality of insulating substrates and a plurality of insulating layers, it is possible to further suppress the circuit formed by the thermoelectric element from being electrically connected to the outside through a void or crack generated in the insulating substrate.
The first insulating substrate 210a, the second insulating substrate 220a, the third insulating substrate 210b, and the fourth insulating substrate 220b may be single green sheets. The first insulating substrate 210a, the second insulating substrate 220a, the third insulating substrate 210b, and the fourth insulating substrate 220b may be laminated sheets. In the present embodiment, the insulating substrates are laminated in 2 layers, but may be laminated in 3 layers or more.
Embodiment 3
Fig. 4 is a cross-sectional view of a thermoelectric conversion element module 300 according to embodiment 3. In the present embodiment, a first metal layer 311 is provided under the first insulating substrate 10. A first insulating layer 12 is disposed under the first metal layer 311. In addition, a second metal layer 321 is provided on the second insulating substrate 20. A second insulating layer 22 is disposed over the second metal layer 321. Other structures are the same as those of embodiment 1. In this way, the first insulating substrate 10 and the second insulating substrate 20 may be metallized.
The first metal layer 311 and the second metal layer 321 in this embodiment may be formed of gold or nickel, for example. In addition, the first metal layer 311 and the second metal layer 321 may be each formed of a plurality of layers. The plurality of layers includes, for example, a layer formed of nickel and a layer formed of gold.
There are often cases where the insulating substrate is covered with a metal layer. If a void or a crack is formed in such an insulating substrate, the metal component in the first layer of the metal layer from the insulating substrate may intrude into the void or the crack. In the present embodiment, the metal components of the first metal layer 311 and the second metal layer 321 may intrude into the defects of the first insulating substrate 10 and the second insulating substrate 20, respectively. Therefore, in this embodiment, the front and back of the insulating substrate are more likely to be electrically connected by electromigration as compared with embodiment 1.
In this embodiment, even in such a case, the first insulating layer 12 provided between the first metal layer 311 and the metal layer 14 can suppress the electric circuit formed by the thermoelectric element from being electrically connected to the outside via the first insulating substrate 10. In addition, the circuit formed by the thermoelectric element can be prevented from being electrically connected to the outside through the second insulating substrate 20 by the second insulating layer 22 provided between the second metal layer 321 and the metal layer 24.
The technical features described in the embodiments may be appropriately combined and used.
Description of the reference numerals
A first insulating substrate; first insulating layer; metal layer; a second insulating substrate; a second insulating layer; metal layer; 31a, 31b, 31 c..n-type thermoelectric elements; 32a, 32b, 32c. 41a, 41b, 41c, 41d, 42a, 42b, 42c. A semiconductor device; 51. substrates; a semiconductor chip; metal block; power supply; 100. thermoelectric conversion element module; 210a. An insulating substrate; a third insulating substrate; 212a. a first insulating layer; a third insulating layer; a second insulating substrate; fourth. An insulating substrate; 222a. a second insulating layer; 222b. a fourth insulating layer; thermoelectric conversion element module; first metal layer; second metal layer.
Claims (7)
1. A thermoelectric conversion element module is characterized in that,
The thermoelectric conversion element module includes:
A first insulating substrate;
The second insulating substrate is arranged above the first insulating substrate;
an n-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate;
A p-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate;
A first electrode provided on a back surface, which is a surface of the second insulating substrate facing the first insulating substrate, and electrically connecting an upper end side of the n-type thermoelectric element and an upper end side of the p-type thermoelectric element;
a second electrode provided on an upper surface of the first insulating substrate and electrically connected to a lower end side of the n-type thermoelectric element;
a third electrode provided on the upper surface of the first insulating substrate and electrically connected to a lower end side of the p-type thermoelectric element;
A first metal layer disposed under the first insulating substrate;
A first insulating layer disposed under the first metal layer so as to expose the first electrode, the second electrode, and the third electrode;
The second metal layer is arranged on the second insulating substrate; and
And a second insulating layer disposed on the second metal layer so as to expose the first electrode, the second electrode, and the third electrode.
2. The thermoelectric conversion element module according to claim 1, wherein,
The first insulating substrate and the second insulating substrate are ceramic substrates,
The first insulating layer and the second insulating layer are unfired.
3. The thermoelectric conversion element module according to claim 1 or 2, wherein,
The firing temperature of the first insulating layer is equal to or lower than the firing temperature of the first insulating substrate.
4. The thermoelectric conversion element module according to claim 1 or 2, wherein,
The first insulating substrate and the second insulating substrate are formed of green sheets.
5. The thermoelectric conversion element module according to claim 1 or 2, wherein,
The first insulating layer and the second insulating layer are formed of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon oxynitride, titanium nitride, or a nonconductive organic material.
6. A thermoelectric conversion element module is characterized in that,
The thermoelectric conversion element module includes:
A first insulating substrate;
The second insulating substrate is arranged above the first insulating substrate;
an n-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate;
A p-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate;
A first electrode provided on a back surface, which is a surface of the second insulating substrate facing the first insulating substrate, and electrically connecting an upper end side of the n-type thermoelectric element and an upper end side of the p-type thermoelectric element;
a second electrode provided on an upper surface of the first insulating substrate and electrically connected to a lower end side of the n-type thermoelectric element;
a third electrode provided on the upper surface of the first insulating substrate and electrically connected to a lower end side of the p-type thermoelectric element;
A first metal layer disposed under the first insulating substrate;
a first insulating layer disposed under the first metal layer;
the second metal layer is arranged on the second insulating substrate;
The second insulating layer is arranged on the second metal layer;
a third insulating substrate disposed under the first insulating layer;
A third insulating layer disposed under the third insulating substrate;
a fourth insulating substrate disposed on the second insulating layer; and
And the fourth insulating layer is arranged on the fourth insulating substrate.
7. A method for manufacturing a thermoelectric conversion element module, characterized in that,
An n-type thermoelectric element and a p-type thermoelectric element are provided between a first insulating substrate and a second insulating substrate provided above the first insulating substrate, an upper end side of the n-type thermoelectric element and an upper end side of the p-type thermoelectric element are electrically connected to each other through a first electrode provided on a back surface, which is a surface facing the first insulating substrate, of the second insulating substrate, a second electrode provided on an upper surface of the first insulating substrate is electrically connected to a lower end side of the n-type thermoelectric element, and a third electrode provided on the upper surface of the first insulating substrate is electrically connected to a lower end side of the p-type thermoelectric element,
After firing the first insulating substrate and the second insulating substrate, a first insulating layer is provided under the first insulating substrate so as to expose the first electrode, the second electrode, and the third electrode, and a second insulating layer is provided over the second insulating substrate so as to expose the first electrode, the second electrode, and the third electrode.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| PCT/JP2019/041709 WO2021079462A1 (en) | 2019-10-24 | 2019-10-24 | Thermoelectric conversion element module and method for producing thermoelectric conversion element module |
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| CN114556600A CN114556600A (en) | 2022-05-27 |
| CN114556600B true CN114556600B (en) | 2024-10-22 |
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| WO2021079462A1 (en) | 2021-04-29 |
| CN114556600A (en) | 2022-05-27 |
| JP6822609B1 (en) | 2021-01-27 |
| JPWO2021079462A1 (en) | 2021-11-18 |
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