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CN114496340B - A radiographic image screen based on the Cherenkov effect - Google Patents

A radiographic image screen based on the Cherenkov effect Download PDF

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CN114496340B
CN114496340B CN202210072627.2A CN202210072627A CN114496340B CN 114496340 B CN114496340 B CN 114496340B CN 202210072627 A CN202210072627 A CN 202210072627A CN 114496340 B CN114496340 B CN 114496340B
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light guide
conversion target
array
light
image screen
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CN114496340A (en
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张美�
宋岩
李阳
严维鹏
马继明
张艳红
盛亮
段宝军
宋顾周
李冬
彭博栋
赵吉祯
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Northwest Institute of Nuclear Technology
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    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K4/00Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
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  • Conversion Of X-Rays Into Visible Images (AREA)

Abstract

The invention provides a radiation image screen based on the Cherenkov effect, which provides a scheme for the ultra-fast radiation imaging technology of energy clamping threshold, according to the scheme, through optimizing the conversion target and the light guide array, the problem that detection efficiency and spatial resolution based on the Cherenkov effect imaging are compatible is solved. The invention provides a radiation image screen based on a Cherenkov effect, which comprises a conversion target and a light guide array; the conversion target is arranged on the light inlet side of the light guide array, and the distance between the conversion target and the light guide array is within 2 mm; the light guide array has high transparency and light guide image transmission function, and is mainly composed of a plurality of light guides which are arranged, wherein the light guides are made of radiation-resistant optical materials with high optical transparency, and a black anti-crosstalk layer is coated between the light guides; the core diameter of the light guide is 0.5-1 mm.

Description

一种基于契伦科夫效应的射线图像屏A radiographic image screen based on the Cherenkov effect

技术领域Technical Field

本发明属于高能射线成像技术领域,具体涉及一种基于契伦科夫效应的射线图像屏,主要用于伽马或X射线及电子束成像,特别涉及一种具有能量卡阈特性的超快射线图像转换屏。The present invention belongs to the technical field of high-energy ray imaging, and specifically relates to a ray image screen based on the Cherenkov effect, which is mainly used for gamma or X-ray and electron beam imaging, and particularly relates to an ultrafast ray image conversion screen with energy card threshold characteristics.

背景技术Background Art

随着高能量密度物理装置的发展,其强度越来越高,持续时间越来越短,如在建的超快伽马射线装置和惯性约束聚变装置,其物理过程持续时间往往在ns量级甚至亚ns量级,不同能量的射线反映了不同的作用机制,通过超快射线成像技术来诊断装置辐射区的形态参数演化和区分不同物理过程的作用机制是一项不可缺失的重要手段。同时由于射线作用复杂,源区射线经过与环境介质的散射作用往往会形成低能散射本底,对获取有效图像形成干扰,应用有效的能量卡阈探测可获得更高质量的目标图像。With the development of high-energy-density physical devices, their intensity is getting higher and higher, and their duration is getting shorter and shorter. For example, the ultrafast gamma-ray device and inertial confinement fusion device under construction often have physical process durations of nanoseconds or even subnanometers. Rays of different energies reflect different mechanisms of action. It is an indispensable and important means to diagnose the evolution of morphological parameters in the radiation zone of the device and distinguish the mechanisms of action of different physical processes through ultrafast ray imaging technology. At the same time, due to the complexity of ray action, the source area rays often form a low-energy scattering background after scattering with the environmental medium, which interferes with the acquisition of effective images. The application of effective energy card threshold detection can obtain higher quality target images.

目前的射线探测成像多是以闪烁体为辐射转换屏,多数的闪烁体对各种能量射线均响应,但时间响应不够快,多在ns量级以上,并存有一定的慢衰减时间成份。契伦科夫转换体兼具超快的时间响应能力(百ps级)和能量阈值特性,可用于对特定能量段的射线成像。但是由于契伦科夫效应的发光效率较低,通常需要增加契伦科夫辐射体的厚度提高探测效率和光输出,然而增加契伦科夫辐射体的厚度,又会降低成像的空间分辨能力。At present, scintillators are mostly used as radiation conversion screens for ray detection and imaging. Most scintillators respond to rays of various energies, but the time response is not fast enough, mostly above the nanosecond level, and there is a certain slow decay time component. The Cherenkov converter has both ultra-fast time response capability (hundreds of ps level) and energy threshold characteristics, and can be used for imaging rays in a specific energy range. However, due to the low luminous efficiency of the Cherenkov effect, it is usually necessary to increase the thickness of the Cherenkov radiator to improve the detection efficiency and light output. However, increasing the thickness of the Cherenkov radiator will reduce the spatial resolution of the imaging.

发明内容Summary of the invention

本发明提供一种基于契伦科夫效应的射线图像屏,为能量卡阈的超快射线成像技术提供一种方案,该方案通过优化转换靶和应用光导阵列,解决基于契伦科夫效应成像的探测效率、和空间分辨相互兼顾的问题。The present invention provides a radiation image screen based on the Cherenkov effect, and provides a solution for ultrafast radiation imaging technology with an energy card threshold. The solution solves the problem of balancing detection efficiency and spatial resolution of imaging based on the Cherenkov effect by optimizing conversion targets and applying light guide arrays.

为了实现上述目的,本发明的技术方案如下:In order to achieve the above object, the technical solution of the present invention is as follows:

本发明提供的基于契伦科夫效应的射线图像屏主要适用于MeV能量射线成像,其包括转换靶和光导阵列;所述转换靶设置在光导阵列的入光侧,且与光导阵列的距离在2mm以内;所述光导阵列具有高透明度和光导传像功能,主要由多个光导排列组成,所述光导采用高光学透明度的耐辐照光学材料制作,各光导之间涂黑加防串扰层;所述光导的芯径为0.5~1mm;所述转换靶的厚度x通过以下公式确定:The ray image screen based on the Cherenkov effect provided by the present invention is mainly suitable for MeV energy ray imaging, which includes a conversion target and a light guide array; the conversion target is arranged on the light incident side of the light guide array, and the distance from the light guide array is within 2 mm; the light guide array has high transparency and light guide image transmission function, and is mainly composed of a plurality of light guides arranged, the light guides are made of radiation-resistant optical materials with high optical transparency, and the light guides are coated black to add an anti-crosstalk layer; the core diameter of the light guide is 0.5-1 mm; the thickness x of the conversion target is determined by the following formula:

式中,为电子在转换靶材料中能量损失率;e为电子的电荷,v为电子的速度;m0为电子静止质量;N、Z分别为转换靶材料的单位体积内原子数和原子序数;E为电子能量;β=v/c;I为转换靶物质原子的平均激发和电离电位。In the formula, is the energy loss rate of electrons in the conversion target material; e is the charge of the electron, v is the velocity of the electron; m0 is the rest mass of the electron; N and Z are the number of atoms and atomic number per unit volume of the conversion target material, respectively; E is the electron energy; β = v/c; I is the average excitation and ionization potential of atoms in the conversion target material.

进一步地,所述光导阵列的厚度为3cm~5cm。Furthermore, the thickness of the light guide array is 3 cm to 5 cm.

进一步地,多个光导采用热红外固化胶固化形成阵列。Furthermore, the plurality of light guides are cured by using thermal infrared curing adhesive to form an array.

进一步地,所述光导阵列设置在通过轻质和硬度较高材料制作的外部封装内部。Furthermore, the light guide array is arranged inside an external package made of a light and high-hardness material.

进一步地,所述外部封装做发黑和磨砂处理。Furthermore, the external package is blackened and frosted.

进一步地,所述外部封装选用铝质材料制作。Furthermore, the external packaging is made of aluminum material.

进一步地,所述转换靶采用铍制作,其厚度为2mm;所述转换靶采用有机玻璃制作,其厚度为3mm~5mmFurthermore, the conversion target is made of beryllium and has a thickness of 2 mm; the conversion target is made of organic glass and has a thickness of 3 mm to 5 mm.

与现有技术相比,本发明具有如下有益效果:Compared with the prior art, the present invention has the following beneficial effects:

1.本发明所提供的射线图像屏具有能量阈值特性,可以对特定能量段或感兴趣能量段的射线图像成像,降低背景散射低能射线对成像的干扰。1. The radiation image screen provided by the present invention has an energy threshold characteristic, which can image radiation images in a specific energy range or an energy range of interest, and reduce the interference of background scattered low-energy rays on imaging.

2.本发明所提供的射线图像屏相比现有的闪烁体图像屏,发光持续时间短,有更快的响应时间能力,达到百皮秒量级,无慢成份衰减时间。2. Compared with the existing scintillator image screen, the radiation image screen provided by the present invention has a shorter luminous duration and a faster response time capability, reaching the order of hundreds of picoseconds, and has no slow component decay time.

3.本发明射线图像屏采用耐辐照光导阵列,适宜于在高强度射线环境下使用。3. The radiation image screen of the present invention adopts a radiation-resistant light-conducting array and is suitable for use in a high-intensity radiation environment.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1为本发明基于契伦科夫效应的射线图像屏的结构示意图;FIG1 is a schematic structural diagram of a radiation image screen based on the Cherenkov effect of the present invention;

图2为本发明光导阵列排布示意图;FIG2 is a schematic diagram of the arrangement of the light guide array of the present invention;

图3为本发明实施例中对石英光纤阵列图像屏进行测试的示意图;FIG3 is a schematic diagram of testing a quartz optical fiber array image screen in an embodiment of the present invention;

图4为本发明实施例中在钴60伽马射线源上对石英光纤阵列图像屏4实测的发光性能示意图;FIG4 is a schematic diagram of the luminescence performance of the quartz fiber array image screen 4 measured on a cobalt-60 gamma-ray source in an embodiment of the present invention;

图5为本发明实施例中在钴60伽马射线源上对石英光纤阵列图像屏4实测的对钨块分辨卡成像结果的示意图;FIG5 is a schematic diagram of the imaging result of the tungsten block resolution card measured on the quartz fiber array image screen 4 on the cobalt 60 gamma ray source in an embodiment of the present invention;

图6为本发明实施例中在小于10ps的脉冲电子束测得石英光纤阵列图像屏4时间响应波形的示意图。FIG6 is a schematic diagram of the time response waveform of the quartz fiber array image screen 4 measured by a pulsed electron beam of less than 10 ps in an embodiment of the present invention.

附图标记:1-转换靶,2-光导阵列,21-光导,3-外部封装,4-石英光纤阵列图像屏,5-钴源,6-准直器,7-屏蔽体,8-钨块分辨卡,9-反射镜,10-CCD相机。Figure numerals: 1 - conversion target, 2 - light guide array, 21 - light guide, 3 - external packaging, 4 - quartz fiber array image screen, 5 - cobalt source, 6 - collimator, 7 - shielding body, 8 - tungsten block resolution card, 9 - reflector, 10 - CCD camera.

具体实施方式DETAILED DESCRIPTION

下面结合附图和具体实施方式对本发明进行详细说明。本领域技术人员应当理解的是,这些实施方式仅仅用来解释本发明的技术原理,目的并不是用来限制本发明的保护范围。The present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

本发明提供了一种基于契伦科夫效应的射线图像屏,该射线图像屏基于光学波导原理实现,是一种厚型阵列式契伦科夫图像转换屏。该射线图像屏主要由转换靶1、光导阵列2和外部封装3组成。对于入射带电粒子束,转换靶1可作为能量初级卡阈,对于射线束,转换靶1可形成次级带电粒子束图像,满足一定阈值能量的带电粒子图像在光导阵列2中输运产生契伦科夫光学图像,从而被后端的CCD相机采集处理。本发明所提供的射线图像屏拥有超快的时间响应,且具有能量卡阈特性,既可用以对特定能量段射线图像测量,也可用以超快时间分辨射线图像诊断。The present invention provides a ray image screen based on the Cherenkov effect, which is implemented based on the principle of optical waveguides and is a thick array-type Cherenkov image conversion screen. The ray image screen is mainly composed of a conversion target 1, a light guide array 2 and an external package 3. For the incident charged particle beam, the conversion target 1 can be used as a primary energy threshold. For the ray beam, the conversion target 1 can form a secondary charged particle beam image. The charged particle image that meets a certain threshold energy is transported in the light guide array 2 to generate a Cherenkov optical image, which is then collected and processed by the CCD camera at the back end. The ray image screen provided by the present invention has an ultra-fast time response and an energy threshold characteristic, which can be used for both measurement of ray images in a specific energy range and ultra-fast time-resolved ray image diagnosis.

基于带电粒子在材料中输运产生的契伦科夫效应使射线图像转换成可采集传输的可见光图像。根据契伦科夫效应,介质中的带电粒子群速度超过介质中的光速,就会产生契伦科夫光辐射,即只有大于一定能量阈值的带电粒子才能在材料中产生契伦科夫光,其能量阈值与材料的折射率有关。因高能射线(如伽马)与介质作用可生成次级带电粒子,高能射线也可以实现基于契伦科夫光辐射成像。由光波导理论可知,光波导中只有满足传输临界角内的光线才能传输,形成所谓的束缚光线,在波导的约束下,可实现具有一定空间分辨能力的光学图像的传输。因此结合契伦科夫辐射原理和光波导原理,可解决成像探测效率不足的问题,并实现射线的能量卡阈成像;同时,因契伦科夫发光的持续时间极短,具有超快的响应能力。Based on the Cherenkov effect generated by the transport of charged particles in the material, the ray image is converted into a visible light image that can be collected and transmitted. According to the Cherenkov effect, when the speed of the charged particle group in the medium exceeds the speed of light in the medium, Cherenkov light radiation will be generated, that is, only charged particles greater than a certain energy threshold can generate Cherenkov light in the material, and its energy threshold is related to the refractive index of the material. Because high-energy rays (such as gamma) can generate secondary charged particles when interacting with the medium, high-energy rays can also realize imaging based on Cherenkov light radiation. According to the theory of optical waveguides, only light that meets the critical angle of transmission can be transmitted in the optical waveguide, forming the so-called bound light. Under the constraint of the waveguide, the transmission of optical images with certain spatial resolution can be realized. Therefore, combining the principles of Cherenkov radiation and optical waveguides can solve the problem of insufficient imaging detection efficiency and realize energy threshold imaging of rays; at the same time, because the duration of Cherenkov luminescence is extremely short, it has ultra-fast response capability.

根据上述原理,本发明所提供的基于契伦科夫效应的射线图像屏主要包含两部分,第一部分是前端的带电粒子转换靶1,第二部分为作为契伦科夫辐射转换体的图像阵列探测器。According to the above principle, the radiation image screen based on the Cherenkov effect provided by the present invention mainly comprises two parts. The first part is the charged particle conversion target 1 at the front end, and the second part is the image array detector as a Cherenkov radiation converter.

上述转换靶1的设计,依据伽马射线与物质康普顿散射公式(1)~(3)计算出电子的能量和角分布:The design of the conversion target 1 is based on the Compton scattering formula (1) to (3) of gamma rays and matter to calculate the energy and angular distribution of electrons:

式中,Ee为反冲电子能量;Er为入射伽马射线的能量;m0为电子静止质量;c为真空中光速;为散射电子反冲角;θ为散射伽马的散射角;为伽马射线与转换靶作用的微分截面;Z为靶材料原子序数;a=Er/m0c2;r0为经典电子半径;Where, E e is the energy of the recoil electron; Er is the energy of the incident gamma ray; m 0 is the electron rest mass; c is the speed of light in vacuum; is the recoil angle of scattered electrons; θ is the scattering angle of scattered gamma; is the differential cross section of the gamma ray interaction with the conversion target; Z is the atomic number of the target material; a=E r /m 0 c 2 ; r 0 is the classical electron radius;

通过快电子与物质作用的能量损失公式(4),可计算出电子出射效率与厚度的关系,确定出射最大电子产额时转换靶1的厚度x;The energy loss formula (4) of the interaction between fast electrons and matter can be used to calculate the relationship between the electron emission efficiency and the thickness, and determine the thickness x of the conversion target 1 when the maximum electron yield is emitted;

式中,为电子在转换靶材料中能量损失率;e为电子的电荷,v为电子的速度;N、Z分别为转换靶材料的单位体积内原子数和原子序数;E为电子能量;β=v/c;I为转换靶物质原子的平均激发和电离电位。In the formula, is the energy loss rate of electrons in the conversion target material; e is the charge of the electron, v is the speed of the electron; N and Z are the number of atoms and atomic number per unit volume of the conversion target material, respectively; E is the electron energy; β = v/c; I is the average excitation and ionization potential of atoms in the conversion target material.

铍作为一种常用的转换靶,对于MeV能量的伽马,采用上述的理论结合蒙特卡罗方法模拟软件(MCNP)模拟得到,铍靶厚度为2mm左右时,产生次级电子转换效率最优,如果采用有机玻璃取3mm~5mm为优。Beryllium is a commonly used conversion target. For gamma with MeV energy, the above theory combined with Monte Carlo method simulation software (MCNP) is used to simulate that when the beryllium target thickness is about 2 mm, the secondary electron conversion efficiency is optimal. If organic glass is used, 3 mm to 5 mm is preferred.

对于图像阵列探测器设计,选择具有高透明度的光导阵列2,且具有较高耐辐照性能,单根光导21作为一个像元,整体组成一个阵列图像屏。目前具有高透明的光学光导21玻璃材料,其折射率大约在1.4左右,对应产生契伦科夫辐射光的电子的最低能量阈值约0.2MeV。本发明的图像屏主要适用于MeV能量射线成像。对于MeV能量的伽马射线,依据上述理论公式(1)~(4),结合蒙特卡罗方法并借助大型射线粒子输运软件MCNP模拟,可得到次级电子在光学玻璃中输运的空间分布以及成像空间分辨特性。根据模拟结果,本发明中单像素光导21的直径取0.5mm~1mm,光导阵列2的厚度为3cm~5cm,可实现空间分辨与探测效率综合优化的结果。For the design of image array detector, a light guide array 2 with high transparency and high radiation resistance is selected. A single light guide 21 is used as a pixel, and the whole constitutes an array image screen. At present, the glass material of optical light guide 21 with high transparency has a refractive index of about 1.4, corresponding to the minimum energy threshold of electrons that produce Cherenkov radiation light of about 0.2MeV. The image screen of the present invention is mainly suitable for MeV energy ray imaging. For gamma rays with MeV energy, according to the above theoretical formulas (1) to (4), combined with the Monte Carlo method and with the help of large-scale ray particle transport software MCNP simulation, the spatial distribution of secondary electron transport in optical glass and the imaging spatial resolution characteristics can be obtained. According to the simulation results, the diameter of the single pixel light guide 21 in the present invention is 0.5mm~1mm, and the thickness of the light guide array 2 is 3cm~5cm, which can achieve the result of comprehensive optimization of spatial resolution and detection efficiency.

对于带电粒子束,转换靶1还可以作为卡阈介质,可由公式(4)计算给出不同材料(常用的是金属材料,可采用铜、铝等)对不同能量电子的损失规律,以确定材料的选型和尺寸。For charged particle beams, the conversion target 1 can also be used as a threshold medium. The loss law of different materials (commonly used are metal materials, such as copper and aluminum) for electrons of different energies can be calculated by formula (4) to determine the selection and size of the material.

如图1和图2所示,本发明基于契伦科夫效应的射线图像屏主要包括转换靶1、光导阵列2和外部封装3。对于带电粒子束,转换靶1可作为初级卡阈,或者也可以不用,此处不做必要使用的限制。转换靶1需紧贴光导阵列2,以降低出射带电粒子束空间弥散对整体图像屏空间分辨的影响。光导阵列2包括多个光导21,光导21选择高光学透明度的材料,依据具体的能量阈值要求(电子的速度c为真空中的光速,n为材料的折射率),选择所需折射率的光学光导材料。光导阵列2材料选择耐辐照光学材料,以降低光导21材料受辐照光学透明度变差的影响。光导阵列2的参数根据具体上述的选取原则。光导阵列2中单像元光导21外包层需作凃黑处理,减少光导21之间光信号串扰,同时,光导21与光导21之间用热红外固化胶固化,形成阵列。整个阵列屏外部封装3采用轻质和硬度较高的材料,具体可选用铝质材料。为降低图像背景杂散光,外部封装3材料需进行发黑和磨砂处理,并做发黑和磨砂处理。As shown in FIG. 1 and FIG. 2 , the radiation image screen based on the Cherenkov effect of the present invention mainly includes a conversion target 1, a light guide array 2 and an external package 3. For a charged particle beam, the conversion target 1 can be used as a primary card threshold, or it can be omitted, and there is no restriction on its necessary use. The conversion target 1 needs to be close to the light guide array 2 to reduce the influence of the spatial dispersion of the emitted charged particle beam on the spatial resolution of the overall image screen. The light guide array 2 includes a plurality of light guides 21, and the light guides 21 are made of a material with high optical transparency ... c is the speed of light in a vacuum, and n is the refractive index of the material), and an optical lightguide material with the required refractive index is selected. The material of the lightguide array 2 selects radiation-resistant optical materials to reduce the impact of the optical transparency of the lightguide 21 material being affected by the irradiation. The parameters of the lightguide array 2 are based on the specific selection principles mentioned above. The outer cladding of the single-pixel lightguide 21 in the lightguide array 2 needs to be blackened to reduce the crosstalk of optical signals between the lightguides 21. At the same time, the lightguides 21 and 21 are cured with thermal infrared curing glue to form an array. The external packaging 3 of the entire array screen adopts a lightweight and high-hardness material, and aluminum material can be specifically selected. In order to reduce the background stray light of the image, the material of the external packaging 3 needs to be blackened and frosted, and blackened and frosted.

本发明基于契伦科夫效应的射线图像屏探测成像时,入射源为带电粒子束或是由射线束经过转换靶1产生带电粒子束,带电粒子在光导阵列2中输运,产生契伦科夫光,形成光学图像;产生契伦科夫光的射线束能量阈值,由契伦科夫效应的公式及射线产生次级带电粒子物理过程决定,满足通用的射线与物质作用原理。When the radiation image screen of the present invention detects and images based on the Cherenkov effect, the incident source is a charged particle beam or a charged particle beam is generated by a radiation beam passing through a conversion target 1, and the charged particles are transported in a light guide array 2 to generate Cherenkov light to form an optical image; the energy threshold of the radiation beam that generates Cherenkov light is determined by the formula of the Cherenkov effect and the physical process of radiation generating secondary charged particles, and meets the general principle of the interaction between radiation and matter.

采用图3的成像实验考核本发明基于契伦科夫效应的射线图像屏的可行性。该实验系统包括石英光纤阵列图像屏4、钴源5、准直器6、屏蔽体7、钨块分辨卡8、反射镜9和CCD相机10,实验中采用钴60辐射伽马射线源,射线源经准直孔出射,在伽马源一定的距离处,放置石英光纤阵列图像屏4,紧贴光纤阵列屏入射面放置3mm有机材料板作转换靶1,阵列图像屏整个输入面被射线均匀辐照,阵列屏输出光学图像经反射镜9折反后,由透镜耦合的CCD相机10进行图像采集记录。为降低CCD相机10被射线直照和空间散射,除射线入射通道外,阵列屏和CCD相机10周围均由铅砖屏蔽。The imaging experiment of FIG3 is used to evaluate the feasibility of the ray image screen based on the Cherenkov effect of the present invention. The experimental system includes a quartz fiber array image screen 4, a cobalt source 5, a collimator 6, a shield 7, a tungsten block resolution card 8, a reflector 9 and a CCD camera 10. In the experiment, a cobalt 60 gamma ray source is used. The ray source emits through the collimation hole. A quartz fiber array image screen 4 is placed at a certain distance from the gamma source. A 3mm organic material plate is placed close to the incident surface of the fiber array screen as a conversion target 1. The entire input surface of the array image screen is uniformly irradiated by the ray. The optical image output by the array screen is refracted by the reflector 9, and the image is collected and recorded by the lens-coupled CCD camera 10. In order to reduce the direct irradiation and spatial scattering of the CCD camera 10 by the ray, the array screen and the CCD camera 10 are shielded by lead bricks except for the ray incident channel.

图4给出了本发明的实验结果,表明图像屏均匀发光输出。在图像屏的入射面处放置一钨块分辨卡8,钨块分辨卡8紧贴图像屏入射端面,伽马射线穿过钨块分辨卡8入射在图像屏上,由于透射后的射线强度不同,在图像屏上形成与钨块分辨卡8相似的灰度图像,图5是在伽马射线辐照下钨块分辨卡8经图像屏形成的图像,表明本发明应用射线成像是可行的。FIG4 shows the experimental results of the present invention, indicating that the image screen has uniform light output. A tungsten block resolution card 8 is placed at the incident surface of the image screen, and the tungsten block resolution card 8 is close to the incident end surface of the image screen. Gamma rays pass through the tungsten block resolution card 8 and are incident on the image screen. Due to the different intensity of the rays after transmission, a grayscale image similar to the tungsten block resolution card 8 is formed on the image screen. FIG5 is an image formed by the tungsten block resolution card 8 through the image screen under gamma ray irradiation, indicating that the present invention is feasible for using ray imaging.

图6是在小于10ps的脉冲电子束测得石英光纤阵列图像屏4时间响应波形,该波形包含阵列屏、光电探测器、传输电缆等各种响应,但其半宽度依然小于1ns,说明就单纯石英阵列屏来说,发光持续时间会更短。FIG6 is a time response waveform of the quartz fiber array image screen 4 measured with a pulsed electron beam of less than 10 ps. The waveform includes various responses of the array screen, photodetector, transmission cable, etc., but its half-width is still less than 1 ns, indicating that for a pure quartz array screen, the luminescence duration will be shorter.

Claims (5)

1.一种基于契伦科夫效应的射线图像屏,其特征在于:主要适用于MeV能量射线成像,其包括转换靶(1)和光导阵列(2);1. A radiation image screen based on the Cherenkov effect, characterized in that: it is mainly suitable for MeV energy radiation imaging, and comprises a conversion target (1) and a light guide array (2); 所述转换靶(1)设置在光导阵列(2)的入光侧,且与光导阵列(2)的距离在2mm以内;The conversion target (1) is arranged on the light incident side of the light guide array (2), and the distance between the conversion target and the light guide array (2) is within 2 mm; 所述光导阵列(2)的厚度为3cm~5cm;所述光导阵列(2)具有高透明度和光导传像功能,主要由多个光导(21)排列组成,多个光导(21)采用热红外固化胶固化形成阵列,所述光导(21)采用高光学透明度的耐辐照光学材料制作,各光导(21)之间涂黑加防串扰层;所述光导(21)的芯径为0.5~1mm;The thickness of the light guide array (2) is 3 cm to 5 cm; the light guide array (2) has high transparency and light guide image transmission function, and is mainly composed of a plurality of light guides (21) arranged in an array, wherein the plurality of light guides (21) are cured by thermal infrared curing adhesive to form an array, and the light guides (21) are made of radiation-resistant optical materials with high optical transparency, and the light guides (21) are coated black to add an anti-crosstalk layer; the core diameter of the light guide (21) is 0.5 to 1 mm; 所述转换靶(1)的厚度x通过以下公式确定:The thickness x of the conversion target (1) is determined by the following formula: 式中,为电子在转换靶材料中能量损失率;e为电子的电荷,v为电子的速度;m0为电子静止质量;N、Z分别为转换靶材料的单位体积内原子数和原子序数;E为电子能量;β=v/c;I为转换靶物质原子的平均激发和电离电位。In the formula, is the energy loss rate of electrons in the conversion target material; e is the charge of the electron, v is the speed of the electron; m0 is the rest mass of the electron; N and Z are the number of atoms and atomic number per unit volume of the conversion target material, respectively; E is the electron energy; β = v/c; I is the average excitation and ionization potential of atoms in the conversion target material. 2.根据权利要求1所述的基于契伦科夫效应的射线图像屏,其特征在于:所述光导阵列(2)设置在通过轻质和硬度较高材料制作的外部封装(3)内部。2. The radiation image screen based on the Cherenkov effect according to claim 1, characterized in that the light guide array (2) is arranged inside an external package (3) made of a light and high-hardness material. 3.根据权利要求2所述的基于契伦科夫效应的射线图像屏,其特征在于:所述外部封装(3)做发黑和磨砂处理。3. The radiation image screen based on the Cherenkov effect according to claim 2, characterized in that the external package (3) is blackened and frosted. 4.根据权利要求3所述的基于契伦科夫效应的射线图像屏,其特征在于:所述外部封装(3)选用铝质材料制作。4. The radiation image screen based on the Cherenkov effect according to claim 3, characterized in that the external package (3) is made of aluminum material. 5.根据权利要求4所述的基于契伦科夫效应的射线图像屏,其特征在于:所述转换靶(1)采用铍制作,其厚度为2mm;所述转换靶(1)采用有机玻璃制作,其厚度为3mm~5mm。5. The radiation image screen based on the Cherenkov effect according to claim 4, characterized in that: the conversion target (1) is made of beryllium and has a thickness of 2 mm; the conversion target (1) is made of organic glass and has a thickness of 3 mm to 5 mm.
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