CN103996779A - Flip-chip LED device and integrated COB display module thereof - Google Patents

Abstract

The invention relates to LED packaging technology, and more particularly relates to a flip-chip LED device and an integrated COB display module thereof. The flip-chip LED device includes an epitaxial layer, and a UBM layer and a passivation layer are respectively plated on different regions of the upper surface of the epitaxial layer, and a polyimide layer is deposited on the UBM layer and the passivation layer, and in the polyimide layer A conductor layer is embedded, one end of the conductor layer is connected to the UBM layer, and a soldering pad on the polyimide layer is made at the other end, and the soldering pad is connected to the other end of the conductor layer. The flip-chip LED device of the present invention is suitable for BT substrate packaging, can effectively avoid the serious CTE mismatch problem between the flip-chip LED device and the BT substrate, and solves the problem that the conventional flip chip must be selected in order to avoid the CTE mismatch between the LED chip and the packaging substrate. Due to the problem of the ceramic substrate, the flip-chip LED device of the present invention can be combined with the BT substrate by using flip-chip technology, which can greatly save the production cost while reducing the dot pitch of the display screen.

Description

A flip-chip LED device and its integrated COB display module

technical field

The invention relates to LED packaging technology, and more specifically, to a flip-chip LED device and an integrated COB display module.

Background technique

In recent years, LED (Light-Emitting Diode, light-emitting diode) indoor display screens have developed rapidly, and products are increasingly developing in the direction of high resolution such as small dot pitch, high density and full color. At present, whether the small-pitch LED display mount devices are SMDLED (Surface Mounted Devices LED, surface mount light-emitting diode) devices or COBLED (Chip On Board LED, chip-on-board package light-emitting diode) modules, they all adopt formal packaging technology. . Front-mount packaging technology is mature in the field of LED applications and is currently the main packaging technology for various LED applications. The flip-chip (flip-chip) packaging technology corresponding to the front-mounting technology has been gradually applied and developed because of its advantages such as strong heat dissipation, saving packaging space, and simplifying the packaging process. At present, flip-chip packaging technology is mainly used in the field of LED lighting. In view of the current trend of LED display pixel size development towards miniaturization, for example, conventional P2.0 LED displays have appeared in the current market, and in order to meet the follow-up indoor display market demand, the display pixel pitch will be further reduced. The actual operation found that when the dot pitch of the display screen is less than 2.0mm (P2.0), the conventional front-mount packaging technology has certain difficulties in the production process, mainly because the front-mount packaging technology requires the necessary packaging space, and the dot pitch is limited by the minimum package allowed by the front-mounted package. Due to space constraints, front-mount technology cannot meet the packaging of smaller pixel-pitch display devices. Compared with front-mount technology, flip-chip technology has obvious advantages. Flip-chip technology has the characteristics of vertical packaging, which can effectively save packaging space, that is, PCB flip-chip technology per unit area can package/accommodate more LED chips than front-mount technology. Therefore, from the perspective of packaging space, flip-chip technology can better realize small-pitch LED displays.

According to the inherent characteristics of LED flip-chip technology, more consideration should be given to the matching of the coefficient of thermal expansion (CTE) between the chip and the packaging substrate when flip-chip packaging. When the CTE of the two materials does not match, in the environment of alternating cold and heat, the rate and degree of thermal expansion and contraction of the material are inconsistent, and problems such as material dislocation, warping and tearing occur, resulting in failure of the packaged product. Considering that the coefficient of thermal expansion (CTE) of the ceramic substrate and the chip is well matched, the current LED flip chip structure in the lighting field is mainly designed for the ceramic substrate. However, the price of ceramic substrates is high, and there is no price advantage for the production of large-area LED display devices, and the high hardness and brittleness of ceramics increase the difficulty of cutting. These problems limit the application of flip-chip technology in the field of LED displays.

Contents of the invention

In order to overcome at least one defect (deficiency) of the above-mentioned prior art, the present invention provides a flip-chip LED device that can effectively reduce the cost while reducing the dot pitch of the display screen when applied to the LED display screen.

The present invention also provides a flip-chip LED device integrated COB display module that can effectively reduce cost while reducing the dot pitch of the display screen when it is applied to the LED display screen.

In order to solve the problems of the technologies described above, the technical solution of the present invention is as follows:

A flip-chip LED device, comprising an epitaxial layer, a UBM layer and a passivation layer are respectively plated on different regions of the upper surface of the epitaxial layer, and a polyimide layer and a conductor layer are respectively arranged on the UBM layer and the passivation layer, wherein The bottom surface of the polyimide layer is covered with a passivation layer, and the conductor layer is embedded in the polyimide layer. One end of the conductor layer is connected to the UBM layer, and the other end is made with a pad on the polyimide layer. The pad is connected to the polyimide layer. The other end of the conductor layer is connected.

Compared with the current conventional flip-chip LED chip, the flip-chip LED device of the present invention adds a polyimide layer, and uses a conductor layer to connect the epitaxial layer and the welding pad. Polyimide is an organic resin, its material performance is similar to that of BT material, and its thermal expansion coefficient and other properties are also similar to BT resin, so the thermal deformation rate and degree of the two are similar when thermal expansion and contraction, making the present invention Flip-chip LED devices can be applied to BT substrate packaging, which can effectively avoid the serious CTE mismatch between flip-chip LED devices and BT substrates, and solve the problem that conventional flip chips must choose ceramic substrates to avoid CTE mismatches between LED chips and packaging substrates Therefore, the flip-chip LED device of the present invention can be combined with the BT substrate by flip-chip technology, which can greatly save the production cost while reducing the dot pitch of the display screen.

A flip-chip LED device integrated COB display module includes a BT substrate and at least one set of the above-mentioned flip-chip LED devices soldered on the BT substrate by flip-chip, and at least one set of flip-chip LED devices is encapsulated by colloid.

Compared with the current conventional flip-chip LED chips that use ceramic substrates, the flip-chip LED device integrated COB display module of the present invention is packaged with a BT substrate. The flip-chip LED device is added with a polyimide layer, and a conductor layer is used to connect the epitaxial layer and solder plate. Polyimide is an organic resin, its material performance is similar to that of BT material, and its thermal expansion coefficient and other properties are also similar to BT resin, so the thermal deformation rate and degree of the two are similar during thermal expansion and contraction, making the BT substrate The welding pad and the pad on the flip-chip LED device are always kept still, avoiding the relative movement between the pads and tearing the pad, effectively avoiding the serious CTE mismatch problem between the flip-chip LED device and the BT substrate, and solving the conventional flip-chip LED device. In order to avoid the mismatch between the LED chip and the packaging substrate CTE, it is necessary to choose a ceramic substrate for chip mounting, so that the present invention can use the BT substrate to package flip-chip LED devices, which greatly saves production costs while reducing the pixel pitch of the display screen. Moreover, the use of BT substrates instead of ceramic substrates avoids problems such as difficult cutting of ceramic substrates and low yield.

Description of drawings

FIG. 1 is a structural diagram of a specific embodiment of a flip-chip LED device according to the present invention.

FIG. 2 is a top view of FIG. 1 .

Fig. 3 is a schematic structural diagram of a conventional LED chip in the prior art.

Fig. 4 is a structural schematic diagram of a bump-shaped pad in a specific embodiment of a flip-chip LED device according to the present invention.

Fig. 5 is a top view structural diagram of a specific embodiment of a COB display module integrated with a flip-chip LED device according to the present invention.

FIG. 6 is a schematic cross-sectional structure diagram of a specific embodiment of a COB display module integrated with flip-chip LED devices according to the present invention.

FIG. 7 is a schematic diagram of the reflow eutectic structure of a conventional flip chip and a conventional BT substrate in the prior art.

FIG. 8 is a schematic diagram of the reflow eutectic structure of a flip-chip LED device and a BT substrate in the present invention.

FIG. 9 is a schematic structural diagram of a COB module integrated with a flip-chip LED device with a reflow structure in the present invention.

FIG. 10 is a schematic structural view of the BT substrate when the driver chip, electronic components, driver circuit and flip-chip LED device are integrated on the BT substrate in the present invention.

FIG. 11 is a schematic structural diagram of a display unit when a driver chip, electronic components, a driver circuit and a flip-chip LED device are integrated on a BT substrate in the present invention.

FIG. 12 is a cross-sectional view of FIG. 11 .

Detailed ways

The accompanying drawings are for illustrative purposes only and cannot be construed as limiting the patent;

In order to better illustrate this embodiment, some parts in the drawings will be omitted, enlarged or reduced, and do not represent the size of the actual product;

For those skilled in the art, it is understandable that some well-known structures and descriptions thereof may be omitted in the drawings.

In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "one end", "another end" etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention. The invention and the simplified description do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implying the quantity of indicated technical features. Thus, the defined "first" and "second" features may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral Ground connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary. It can be said that the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

Example 1

As shown in FIGS. 1 and 2 , they are structural diagrams of a specific embodiment of a flip-chip LED device according to the present invention. Referring to Fig. 1, a flip-chip LED device according to this specific embodiment includes an epitaxial layer 11, a UBM (Under Bump Metallization) layer 12, a passivation layer 13, a conductor layer 14, and a polyimide layer 15. And welding pad 16, UBM layer 12 and passivation layer 13 are respectively plated on epitaxial layer 11 upper surface different regions, on UBM layer 12 and passivation layer 13, set polyimide layer 15 and conductor layer 14 respectively, wherein polyimide The bottom surface of the imide layer 15 covers the passivation layer 13, and the conductor layer 14 is embedded in the polyimide layer 15. One end of the conductor layer 14 is connected to the UBM layer 12, and the other end is made into a pad 16, and the pad 16 is located on the polyimide layer. On the amine layer 15 and connected to the other end of the conductor layer 14, the pad 16 serves as an external electrical connection electrode.

The flip-chip LED device of this specific embodiment is based on the current conventional flip-chip LED chip, and the process innovation is carried out. The specific steps of the chip epitaxial wafer in this specific embodiment are the same as the conventional LED chip epitaxial production. After obtaining the LED chip epitaxial wafer Afterwards, chip electrodes are fabricated. As shown in FIG. 3 , during conventional chip electrode fabrication, a UBM layer 32 is directly fabricated on an epitaxial wafer 31 , and then a pad 33 is directly fabricated on the UBM layer 32 . For the specific electrode fabrication process, refer to the conventional chip electrode fabrication process. In this specific embodiment, when making a flip-chip LED device, the formed epitaxial layer 11 is usually provided with two epitaxial layer pads, which are the positive and negative electrode pads respectively, and the UBM layer 12 covers the positive and negative electrode pads. A passivation layer is formed on the upper surface of the layer except the area where the positive and negative electrode pads are located. When making electrodes for flip-chip LED devices, as shown in Figure 1, a layer of polyimide (PI) layer 15 is deposited on the surface after the epitaxial wafer is manufactured, and the polyimide layer 15 does not cover the UBM layer at this time. 12, then make the conductor layer 14 for connecting the UBM layer 12 and the pad 16 of the epitaxial wafer on the polyimide layer 15, after completing the conductor layer 14, deposit another layer of polyimide layer 15 on the surface, this When the other end of the conductor layer 14 is not covered by the polyimide layer 15, a pad 16 is finally formed at the end of the conductor layer 14, and finally a flip-chip LED device is obtained. Wherein, the luminous color of the flip-chip LED device depends on the material of the epitaxial layer 11, and the preparation process of the other electrodes is the same as that of the conventional LED chip. During this process, the function of the UBM layer 12 is mainly to prevent the materials of the conductor layer 14 from permeating each other when connecting to the pad of the epitaxial layer, so it is specially made. The function of the passivation layer 13 is to realize electrical isolation on the surface of the epitaxial layer 11 and prevent short circuit between the epitaxial layer 11 and other conductive substances such as electrodes.

Compared with the conventional flip-chip LED chip, the flip-chip LED device of this specific embodiment adds a polyimide layer 15 , and uses a conductor layer 14 to connect the epitaxial layer 11 and the bonding pad 16 . Since polyimide is an organic resin, its material performance is similar to that of BT material, and its thermal expansion coefficient and other properties are also similar to BT resin, so the thermal deformation rate and degree of the two are similar during thermal expansion and contraction. Therefore, adding Flip-chip LED devices with polyimide layer 15 are suitable for common substrates, such as BT substrates, and there is no problem that the thermal expansion coefficient of the BT substrate and the chip pad does not match during packaging, resulting in failure of the packaged device. It is suitable for flip-chip technology and BT The combination of substrates is used for LED display screens with small dot pitches, which can avoid the use of high-cost ceramic substrates while reducing the dot pitch of the display screen, thereby saving product costs.

In a specific implementation process, the thickness of the polyimide layer 15 is designed according to the chip area of the flip-chip LED device.

In the specific implementation process, in order to ensure that the pads 16 on the flip-chip LED device and the pads on the BT substrate are always matched, it is generally required that the conductor layer 14 connecting the UBM layer 14 and the pad 16 in the device has good ductility and Plasticity, and in order to achieve better heat dissipation, the area of the conductor layer 14 is as large as possible, preferably the coverage area of the conductor layer 14 is greater than 1/2 of the active light emitting area, and the thickness of the conductor layer 14 is usually set at 10um-100um according to the process. In a preferred implementation manner, in order to meet the conductivity, ductility and heat dissipation capability of the conductor layer 14, the conductor layer 14 in this embodiment is usually implemented with a metal layer, preferably a gold layer.

Example 2

On the basis of Embodiment 1, in order to meet different process requirements during actual production, the pad 16 of the flip chip LED device of the present invention can be designed as a bump form, as shown in Figure 4, the bump 41 material includes pure metal and alloys, pure metals such as gold bumps, and alloys such as tin-silver-copper alloys. Among them, gold bump type flip-chip LED devices are usually suitable for ultrasonic thermocompression welding, and tin-silver-copper alloy bump type flip-chip LED devices are usually suitable for reflow soldering.

Example 3

On the basis of Embodiment 1 or Embodiment 2, the present invention also provides a COB display module integrated with flip-chip LED devices. As shown in Figures 5 and 6, a specific embodiment of a flip-chip LED device integrated COB display module according to the present invention includes a BT substrate 52 and at least one set of Embodiment 1 or Embodiment 2 welded on the BT substrate 52 by flip-chip As for the flip-chip LED devices 51 , at least one group of flip-chip LED devices 51 is encapsulated by glue 53 .

The specific manufacturing process is to use flip-chip technology to complete the welding of the flip-chip LED device 51 on the BT substrate 52, and then use methods such as bump eutectic reflow, bump ultrasonic hot pressing, or gold-tin eutectic to complete the chip soldering and then seal the chip. Glue, the colloid is dried, cut into COB display modules of different sizes according to requirements, and finally obtain COB display modules integrated with flip-chip LED devices.

In this specific embodiment, the flip-chip LED device 51 is welded on the BT substrate 52 by flip-chip technology. Since the flip-chip LED device 51 is added with a polyimide layer with a thermal expansion coefficient similar to that of the BT substrate material, the overlay The flip-chip combination of the crystal LED device 51 and the BT substrate 52 can effectively avoid the serious CTE mismatch problem between the chip and the BT substrate 52, and solve the problem that the conventional flip chip must use a ceramic substrate in order to avoid the CTE mismatch between the chip and the packaging substrate. difficult problems, effectively reducing production costs, and the use of flip-chip technology can meet the packaging requirements of ultra-small pixel pitch displays. In addition, due to the hard and brittle characteristics of ceramics, conventionally used ceramic substrates are easily broken during cutting, affecting yield, and have a large loss on cutting devices. However, in this specific embodiment, ordinary BT substrates 52 are used instead of ceramic substrates, avoiding the need for ceramic substrates. Difficult cutting, low yield, high loss of cutting devices and other problems. The combination of the flip-chip LED device and the BT substrate in this specific embodiment makes the application prospect of the flip-chip technology in the display screen more broad, and the excellent heat transfer capability of the flip-chip technology will further improve the heat dissipation performance of the display product.

The performance of the flip-chip LED device integrated COB display module of this specific embodiment is tested in combination with specific test examples, as follows:

In this example, the conventional flip chip and the conventional BT substrate are reflowed to eutectic, as shown in Figure 7, the conventional flip chip is 71, the conventional BT substrate is 72, and the reflow eutectic point is set to 310°C. In this example, the size of the conventional flip chip 71 is 240um*320um, the material of the chip pad is AuSn alloy, the size of the conventional BT substrate 72 is 126cm*56cm, and the model of the conventional BT substrate 72 is HL832NS. In this example, after the reflow eutectic is completed, X-Ray test, thrust test and thermal shock test are performed on the sample. ANSYS finite element software is used for thermal stress simulation and analysis of the thermal deformation of the chip pad, the pad of the BT substrate 72 and the contact transition area of the BT substrate 72 . Visual inspection of the sample before the test shows that the BT substrate 72 has a large degree of warping. The X-Ray test on the sample shows that the void rate of the solder joint is high, and many large-area voids are found. The thrust test is carried out on the sample (normal tensile value > 5KG) , to record the test data. After the first test of the sample is completed, the thermal shock test is carried out on the sample. The test environment condition is -40°C-100°C. After the test is completed, the X-Ray test is carried out on the sample, and it is found that most of the samples are conventional flip chip 71 and BT substrate 72 Cracks and displacements appeared at the pads on the top, and the push-pull force test was carried out on it, and it was found that the thrust value of the sample decreased. The analysis believes that this is mainly because there is a large difference in coefficient of thermal expansion (CTE) between the chip material and the BT substrate 72, which makes the thermal deformation values (shrinkage/expansion) of the chip and the BT substrate 72 inconsistent when the sample is alternated between hot and cold environments, resulting in chip pads Relative movement occurs with the pad of BT substrate 72. When the displacement of the relative movement exceeds the limit value, the joint between conventional flip chip 71 and BT substrate 72 is torn, which manifests as cracks at the joint of the sample and causes chip displacement. In addition, during the eutectic reflow cooling stage, due to the inconsistent shrinkage rates of the conventional flip chip 71 and the BT substrate 72, the formation of the AuSn eutectic is affected, and large-area voids eventually appear.

In order to further understand the thermal deformation of the contact transition area between the conventional flip chip 71 and the BT substrate 72 pad, this example uses ANSYS software to simulate the sample model, and the simulation found that the pad of the conventional flip chip 71 and the pad of the BT substrate 72 And the thermal deformation of the transition area of the BT substrate 72 exceeds a reasonable value, and the thermal deformation is about 8%, which directly leads to problems such as cracking at the joint. Based on the experimental test data and simulation data, this example further replaces the above-mentioned conventional flip chip with the flip-chip LED chip of the present invention. The substrate is the same BT substrate as above. As shown in Figure 8, the flip-chip LED chip is 81, and the BT substrate is 82. In this example, the thickness of the polyimide layer in the flip-chip LED device 81 is set to 50um, the material property of the conductor layer is gold with excellent ductility and plasticity, and the pad materials on the flip-chip LED chip 81 and the BT substrate 82 are both AuSn alloy is used to simulate the reflow eutectic process of the flip-chip LED device 81, and the simulation environment is set strictly according to the above test conditions. The simulation results show that the thermal deformation values of the chip pad, the BT pad and the transition region of the BT substrate 82 in the reflowed eutectic sample of the flip-chip LED device 81 and the BT substrate 82 are within a normal range. This is mainly because a polyimide layer is added between the flip-chip LED device 81 and the bonding pad, and the material performance of polyimide is similar to that of BT material, and the CTE of the two is also close, so when the heat expands and contracts, the two The rate and degree of thermal deformation (expansion/contraction) of the two are similar, so that the pads on the BT substrate 82 and the pads of the flip-chip LED device 81 are always kept still, avoiding relative movement between the pads and tearing the pads. In addition, the thermal simulation software FloEFD was used to simulate and analyze the working heat of the flip chip LED device 81. The simulation results found that this structure has better heat dissipation capability than the formal LED chip.

In another test example, when the pads in the flip-chip LED device are in the form of bumps, then the finite element software of ANSYS and the thermal simulation software FloEFD are used to test the flip-chip LED device (as shown in Figure 4) and the flip-chip LED device with The thermal deformation and heat transfer capability simulation of the BT substrate welding process is carried out. As shown in Figure 9, it is a schematic diagram of the structure of a COB module integrated with a flip-chip LED device with a reflow structure, where 91 is a flip-chip LED device and 92 is a BT substrate. In this test example, it is found that the difference between the simulation results of the two structures is small, and its thermal deformation value is similar to that of the flip-chip LED device structure in Example 1. After the chip PCBA is completed, the chip with gold bumps has a maximum operating temperature of about 41°C when loaded , The chip temperature of the AuSn pad is about 43°C, and the heat dissipation capability of the gold bump is better than that of the AuSn pad and the tin-silver-copper alloy bump structure. This is mainly because the thermal expansion matching between the flip-chip LED device and the BT substrate mainly depends on the thermal expansion matching between the polyimide layer of the chip and the BT substrate, and the materials of bumps and pads have little influence on thermal deformation. The flip-chip LED device of the present invention meets the requirements of different flip-chip processes.

In another test example, a small-sized RGB flip-chip LED device was designed with a size of 7mil*8mil. The chip structure was the same as the flip-chip structure in Example 1, and the thickness of the polyimide layer was adjusted to 10um-20um according to the chip area. , and then mount the RGB flip-chip LED device into a COB module as shown in Figure 5, which is suitable for small-pitch full-color LED displays. Specific steps: design the BT substrate, the pixel pitch P is 1.0mm (a group of RGB is one pixel); apply flux on the BT substrate; solidify the crystal; reflow; seal the glue, use the molding process to seal the glue; Product Features Cut COB modules of different sizes; mount LED display units (the placement process is consistent with the conventional SMD device placement process). Using ANSYS software and FloEFD software, the thermal deformation simulation analysis and heat transfer analysis of the COB module were carried out respectively. At the same time, establish COB module models of the same specification for conventional flip-chip and front-mount chip packages (conventional front-chip package P1.0 display modules are very difficult in actual operation. The structure can further reduce the chip pitch/display module dot pitch), and form a comparative experiment with the COB module of the flip-chip structure. The simulation results found that the thermal deformation of the COB module with the flip chip structure of the present invention is small, and the thermal deformation is within the normal deformation range, while the thermal deformation of the COB module with the conventional flip-chip structure is relatively large, and the deformation value exceeds the limit; The heat dissipation capability of the COB module is stronger than that of the conventional chip structure COB module, and the maximum temperature difference is about 10°C. In order to further study the optical performance of COB, this example adopts the optical simulation software Tracepro to perform optical simulation on the COB module, and compares it with the COB module packaged in conventional front-mounted chips. The luminous characteristics of COB modules are similar. Therefore, the flip-chip LED device integrated COB display module of the present invention is more excellent in practical operation and product performance in the field of small pixel pitch display screens.

Example 4

On the basis of Embodiment 3, in order to further simplify the packaging process, the present invention further designs the BT substrate, and integrates the drive chip, related electronic components and drive circuits on the BT substrate, as shown in Figures 10-12, 101 is the PCB Board, 102 is an electronic component required for the normal operation of the display module, which realizes the integration of the BT chip packaging substrate and the display carrier board, thereby omitting the subsequent placement steps, simplifying the packaging process, and improving production efficiency. The specific steps are similar to the COB module manufacturing process in Example 3: BT substrate design (including driver chips, related electronic components, and driver circuits); applying flux; solid crystal; reflow; sealing glue; colloid drying; obtaining display screen unit, as shown in the figure. This process omits the mounting and possible cutting links, further simplifies the packaging process, improves the packaging efficiency, and realizes the "unpackaged" LED technology currently on the market in a certain sense.

The above tests have verified that the combination of the flip-chip LED device and the BT substrate of the present invention can be applied to a small-pitch display screen, which reduces product costs while realizing a small-pitch display screen, and is more suitable for popularization and use.

The same or similar reference numerals correspond to the same or similar components;

The positional relationship described in the drawings is only for illustrative purposes and cannot be construed as a limitation to this patent;

Apparently, the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, rather than limiting the implementation of the present invention. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. All modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the claims of the present invention.

Claims (8)

1. one kind covers brilliant LED device, it is characterized in that, comprise epitaxial loayer, be coated with respectively UBM layer and passivation layer in epitaxial loayer upper surface zones of different, be respectively equipped with polyimide layer and conductor layer on UBM layer and passivation layer, wherein polyimide layer bottom surface covers passivation layer, conductor layer is embedded in polyimide layer, conductor layer one end is connected with UBM layer, and the other end is manufactured with the pad being positioned on polyimide layer, and pad is connected with the conductor layer other end.

2. according to claim 1ly cover brilliant LED device, it is characterized in that, the thickness of described conductor layer is 10um-100um.

3. according to claim 1ly cover brilliant LED device, it is characterized in that, described conductor layer is metal level.

4. according to claim 3ly cover brilliant LED device, it is characterized in that, described metal level is gold layer.

5. according to claim 1ly cover brilliant LED device, it is characterized in that, described pad is salient point.

6. according to claim 5ly cover brilliant LED device, it is characterized in that, the material of described salient point is metal or alloy.

7. one kind covers the integrated COB demonstration of brilliant LED device module, it is characterized in that, comprise BT substrate and be welded on the brilliant LED device that covers described at least one group of claim 1-6 any one on BT substrate by upside-down mounting mode, at least one group covers brilliant LED device and encapsulates by colloid.

8. the integrated COB of brilliant LED device that covers according to claim 7 shows module, it is characterized in that, on described BT substrate, is also packaged with driving chip.