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CN103928378A - 双层传片腔体 - Google Patents

双层传片腔体 Download PDF

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Publication number
CN103928378A
CN103928378A CN201410151230.8A CN201410151230A CN103928378A CN 103928378 A CN103928378 A CN 103928378A CN 201410151230 A CN201410151230 A CN 201410151230A CN 103928378 A CN103928378 A CN 103928378A
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chamber
cavity
double
chambers
layer
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Inventor
吴凤丽
姜崴
方仕彩
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Piotech Inc
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Piotech Shenyang Co Ltd
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Priority to CN201410151230.8A priority Critical patent/CN103928378A/zh
Publication of CN103928378A publication Critical patent/CN103928378A/zh
Priority to PCT/CN2015/075244 priority patent/WO2015158203A1/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

双层传片腔体，主要解决现有技术为了实现上下两层传片的功能而使设备整体维护复杂，增加设备使用成本的问题，而设计了一种能够实现双层多腔室的独立传片组合腔体。所述的双层多腔室中的上层和下层腔体分别为独立密闭腔室，每层腔体都可以独立进行传片操作，彼此间不相互影响。每层腔体内部都有两个相互联通的腔室，每个腔室同样可以进行晶圆传片、取片独立操作，彼此间的操作也是互不影响。具有结构合理，设备整体维护相对容易，能够降低设备使用成本的特点。可广泛应用于半导体薄膜沉积应用及制备技术领域。

Description

双层传片腔体
技术领域
本发明涉及一种双层传片腔体结构，特别是一种在每层腔体内设有互相连通但又能独立操作的腔室，此结构主要应用于半导体镀膜设备中，属于半导体薄膜沉积应用及制备技术领域。
背景技术
现有的半导体镀膜设备对腔室的功能性和适用性要求越来越高，传片腔体是晶圆传进、传出的重要腔室，传片腔室不仅要适用不同的设备要求，同时还要有相对独立并具有传取片功能的腔室。目前现有传片腔多为单层腔体，亦有在单层腔体中安置不等高支架来实现上下两层传片的功能要求，使设备整体维护较复杂，要求安装精度非常高才能保证不等高支架的同心度。
发明内容
本发明以解决上述问题为目的，主要解决现有技术为了实现上下两层传片的功能而使设备整体维护复杂，增加设备使用成本的问题，而设计了一种能够实现双层多腔室的独立传片组合腔体。所述的双层多腔室中的上层和下层腔体分别为独立密闭腔室，每层腔体都可以独立进行传片操作，彼此间不相互影响。每层腔体内部都有两个相互联通的腔室，每个腔室同样可以进行晶圆传片、取片独立操作，彼此间的操作也是互不影响。
具体结构：双层传片腔体，包括上层腔体（1）、定位销（2）、下层腔体（3）、腔室A（4）、腔室B（9）、腔室C（10）及腔室D（14）、抽气管路（7）、真空测量组件A（6）和真空测量组件B（13）及平衡大气的阀体A（5）、阀体B（8）、阀体C（11）和阀体D（12）。上述双层传片腔体，腔体是以上层腔体（1）和下层腔体（3）的形式组合而成，并通过销钉（2）固定。双层腔体各自具有独立的抽气管路（7）和真空测量组件A（6）和真空测量组件B（13），上下层腔体均可以独立完成传片功能，能够满足单层传片和双层传片两种功能的要求。
上述腔体都具有两个相互联通的腔室，上层腔体是由腔室C（10）和腔室D(14)组成；下层腔体是由腔室A（4）和腔室B（9）组成。且每个腔室都分别设有平衡大气的阀体A（5）、阀体B（8）、阀体C（11）和阀体D（12），腔室间可以独立实现晶圆传进、传出的功能，彼此不产生影响。
本发明的有益效果及特点在于：
1、实现了两层独立腔体的上下组合，每层腔体都是独立密闭腔室，可以实现独立进行传片的功能；
2、每层腔体内部设置两个相互独立的腔室，腔室间相互联通，共用抽气管路和真空测量组件，腔室间可以独立实现传片功能，可对任意腔室进行单独的日常维护操作。
3、具有结构合理，设备整体维护相对容易，能够降低设备使用成本的特点。可广泛应用于半导体薄膜沉积应用及制备技术领域。
附图说明
图1是本发明的结构示意图。
具体实施方式
实施例
参照图1，双层传片腔体，包括上层腔体1、定位销2、下层腔体3、腔室A4、腔室B9、腔室C10及腔室D14、抽气管路7、真空测量组件A6和真空测量组件B13及平衡大气的阀体A5、阀体B8、阀体C11和阀体D12。上述双层传片腔体，腔体是以上层腔体1和下层腔体3的形式组合而成，并通过销钉2固定。双层腔体各自具有独立的抽气管路7和真空测量组件A6和真空测量组件B13，上下层腔体可以独立完成传片功能，可以适用单层传片和双层传片两种功能要求。
上述腔体都具有两个相互联通的腔室，上层腔体1是由腔室C10和腔室D14组成；下层腔体3是由腔室A4和腔室B9组成。且每个腔室都分别设有平衡大气的阀体A5、阀体B8、阀体C11和阀体D12，腔室间可以独立实现晶圆传进、传出的功能，彼此不产生影响。
双层传片腔体具体实施是将下层腔体3首先吊装在支架上固定，然后安装定位销2，再将上层腔体1吊装到下层腔体3的上部，位置依靠定位销2进行校准，然后再安装真空测量组件A6和真空测量组件B13及平衡大气的阀体A5、阀体B8、阀体C11和阀体D12，最后安装抽气管路7，使整个双层传片腔体处于稳定的安装状态，最后进行工艺操作。

Claims (1)

1.一种双层独立腔体，包括真空测量组件B（13）、平衡大气的阀体A（5）及抽气管路（7），其特征在于：它还包括上层腔体（1）、定位销（2）、下层腔体（3）、腔室A（4）、腔室B（9）、腔室C（10）及腔室D（14）、抽气管路（7）、真空测量组件A（6）和真空测量组件B（13）及平衡大气的阀体A（5）、阀体B（8）、阀体C（11）和阀体D（12），上述双层传片腔体，腔体是以上层腔体（1）和下层腔体（3）的形式组合而成，并通过销钉（2）固定，双层腔体各自具有独立的抽气管路（7）和真空测量组件A（6）和真空测量组件B（13），上述腔体具有两个相互联通的腔室，上层腔体是由腔室C（10）和腔室D(14)组成；下层腔体是由腔室A（4）和腔室B(9)组成，且每个腔室都分别设有平衡大气的阀体A（5）、阀体B（8）、阀体C（11）和阀体D（12），腔室间可以独立实现晶圆传进、传出，彼此不产生影响。
CN201410151230.8A 2014-04-15 2014-04-15 双层传片腔体 Pending CN103928378A (zh)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104213102A (zh) * 2014-09-01 2014-12-17 沈阳拓荆科技有限公司 腔体气流方向可变结构
WO2015158203A1 (zh) * 2014-04-15 2015-10-22 沈阳拓荆科技有限公司 双层传片腔体
WO2016173125A1 (zh) * 2015-04-28 2016-11-03 沈阳拓荆科技有限公司 双层式负载腔室真空与大气快速平衡结构
CN106611722A (zh) * 2015-10-21 2017-05-03 沈阳拓荆科技有限公司 两腔室集定位与对中心功能于一体的双层支架结构
CN109161867A (zh) * 2018-10-11 2019-01-08 中国科学技术大学 可分离式真空互联系统
CN112795906A (zh) * 2021-01-22 2021-05-14 无锡琨圣智能装备股份有限公司 一种双层o-ald原子层沉积设备

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JP5006122B2 (ja) * 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
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CN103928378A (zh) * 2014-04-15 2014-07-16 沈阳拓荆科技有限公司 双层传片腔体

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US20020133968A1 (en) * 2000-01-31 2002-09-26 Giovanni Beltrame Equipment for drying bales of forage of any shape whatsoever
CN1517769A (zh) * 2003-01-10 2004-08-04 周星工程股份有限公司 双重结构的丛集设备
CN1937201A (zh) * 2005-09-22 2007-03-28 东京毅力科创株式会社 基板处理系统和方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015158203A1 (zh) * 2014-04-15 2015-10-22 沈阳拓荆科技有限公司 双层传片腔体
CN104213102A (zh) * 2014-09-01 2014-12-17 沈阳拓荆科技有限公司 腔体气流方向可变结构
CN104213102B (zh) * 2014-09-01 2016-08-24 沈阳拓荆科技有限公司 腔体气流方向可变结构
WO2016173125A1 (zh) * 2015-04-28 2016-11-03 沈阳拓荆科技有限公司 双层式负载腔室真空与大气快速平衡结构
CN106611722A (zh) * 2015-10-21 2017-05-03 沈阳拓荆科技有限公司 两腔室集定位与对中心功能于一体的双层支架结构
CN109161867A (zh) * 2018-10-11 2019-01-08 中国科学技术大学 可分离式真空互联系统
CN109161867B (zh) * 2018-10-11 2023-08-08 中国科学技术大学 可分离式真空互联系统
CN112795906A (zh) * 2021-01-22 2021-05-14 无锡琨圣智能装备股份有限公司 一种双层o-ald原子层沉积设备

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Application publication date: 20140716