CN103650699A - Plasma treatment device for seeds and treatment method of plasma treatment device - Google Patents
Plasma treatment device for seeds and treatment method of plasma treatment device Download PDFInfo
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- CN103650699A CN103650699A CN201310668647.7A CN201310668647A CN103650699A CN 103650699 A CN103650699 A CN 103650699A CN 201310668647 A CN201310668647 A CN 201310668647A CN 103650699 A CN103650699 A CN 103650699A
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- 238000000034 method Methods 0.000 title claims abstract description 7
- 238000009832 plasma treatment Methods 0.000 title abstract 8
- 238000007599 discharging Methods 0.000 claims abstract description 82
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 29
- 238000003756 stirring Methods 0.000 claims abstract description 4
- 239000004568 cement Substances 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000000840 anti-viral effect Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000012495 reaction gas Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 6
- 238000003672 processing method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000003905 agrochemical Substances 0.000 description 2
- 238000012271 agricultural production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003337 fertilizer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 244000045947 parasite Species 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention relates to a plasma treatment device for seeds and a treatment method of the plasma treatment device. The plasma treatment device for the seeds comprises a feeding chamber, a reaction chamber, an electrode assembly, a high-frequency power supply, a discharging chamber and a negative pressure device, wherein a feed inlet and a gas inlet for introducing a reaction gas are formed in one side of the reaction chamber, a discharge opening is formed in the other side of the reaction chamber, the feed inlet end of the reaction chamber is higher than the discharge end of the reaction chamber and is placed by forming an inclined angle of A with the horizontal plane, the feeding chamber is connected with the feed inlet, the discharging chamber is connected with the discharge opening, the reaction chamber is internally provided with a stirring mechanism, the electrode assembly is arranged on the outer surface of the reaction chamber, the high-frequency power supply is electrically connected with the electrode assembly, and the negative pressure device is connected with the feeding chamber and the discharging chamber. The plasma treatment device provided by the invention can simultaneously carry out feed, plasma treatment and discharge, and feeds and discharges in an uninterrupted manner, so that the time is saved and the production efficiency is improved. Furthermore, the reaction gas can increase the yield of the seeds after plasma treatment and improve the antiviral property of the seeds, thereby satisfying the production demand.
Description
Technical field
The invention belongs to plasma processing apparatus field, relate in particular a kind of seed plasma processing apparatus and processing method thereof.
Background technology
The ionized gas shape material that the positron-electron that atom after plasma is deprived of by portions of electronics and atom are ionized rear generation forms, it is extensively present in universe, is often considered to be and removes outside solid, liquid, gas, the 4th state that material exists.
At present, what plasma device was general is two electrodes to be set in airtight container form electric field, with vavuum pump, realize certain vacuum, along with gas is more and more thin, the freely-movable distance of intermolecular distance and molecule or ion is also more and more long, be subject to electric field action, they bump and form gas ions, the activity of these ions is very high, its energy is enough to destroy nearly all chemical bond, material surface in any exposure causes chemical reaction, thereby structure, composition and the group of material surface are changed, and is met the surface of actual requirement.Plasma reaction speed is fast, treatment effeciency is high, and modification occurs over just material surface, on the not impact of the performance of material internal bulk material, is desirable surface modification means.
China Shi Yige large agricultural country, in agricultural products, the quality of seed is extremely important to agricultural production, the output and antiviral the going up that are mainly reflected in seed, the fertilizer that general seed demand is a large amount of and agricultural chemicals improve output and expelling parasite, and the product of production is very dangerous with agricultural chemicals.
Therefore, need seed plasma processing apparatus and the processing method thereof that a kind of security performance is high badly.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, a kind of seed plasma processing apparatus and processing method thereof are provided.
The technical scheme that realizes the object of the invention is: a kind of seed plasma processing apparatus, comprise feed cavity, reaction chamber, electrode assemblie, high frequency electric source, discharging chamber and negative pressure device, the gas access that described reaction chamber one side is provided with charging aperture and passes into for reacting gas, described reaction chamber opposite side is provided with discharging opening, reaction chamber feed inlet end is placed higher than reaction chamber discharge port end and with horizontal plane angle of inclination A, described feed cavity is connected with described charging aperture, described discharging chamber is connected with described discharging opening, in described reaction chamber, be provided with rabbling mechanism, described electrode assemblie is arranged at described reaction chamber outer surface, described high frequency electric source is electrically connected to described electrode assemblie, described negative pressure device respectively with described feed cavity, described discharging chamber connects.
Further, described angle A is 5 °～60 °.
Further, described electrode assemblie is a pair of symmetrically arranged annular electrode.
Further, described rabbling mechanism comprises shaft and is arranged at the stirring vane on described shaft.
Further, described feed cavity comprises the first feed cavity and the second feed cavity being connected successively, and described the first feed cavity is connected with described negative pressure device, and described the second feed cavity is connected with described charging aperture.
Further, also comprise screw feeding mechanism, described screw feeding mechanism is arranged between described the second feed cavity and described charging aperture.
Further, described discharging chamber comprises the first discharging chamber and the second discharging chamber being connected successively, and described the first discharging chamber is connected with described negative pressure device, and described the second discharging chamber is connected with described discharging opening.
Further, a kind of seed method of plasma processing, comprises the following steps:
Step 1, cleans, and seed is washed, dried up;
Step 2, charging, seed clean in step 1 is put in the first feed cavity, negative pressure device vacuumizes the first feed cavity, the second feed cavity, reaction chamber, the first discharging chamber, the second discharging chamber, after vacuumizing, seed is entered to the second feed cavity from the first feed cavity, then from charging aperture, enter reaction chamber, if the first feed cavity hollow, by the port closing of the first feed cavity, toward charging in the first feed cavity, after the first feed cavity charging completes, the first feed cavity is vacuumized, the outlet of then opening the first feed cavity continues charging, keeps continuous feed;
Step 4, discharging, seed after processing in step 3 is entered to the first discharging chamber and the second discharging chamber successively from discharging opening, if fill in the second discharging chamber,, by the first discharging chamber port closing, the second discharging chamber discharging, after discharging completes vacuumizes the second discharging chamber, then continuation discharging is opened in the first discharging chamber outlet, keeps continuous discharge.
Further, in described step 1, with cold wind, dry up.
Further, the reacting gas in described step 3 is neon, argon gas, nitrogen or helium.
The present invention has positive effect: the present invention can realize charging, Cement Composite Treated by Plasma, discharging and carry out simultaneously, and continual charging and discharging, save time, enhance productivity, on the other hand, reacting gas can increase the output of seed after to seed Cement Composite Treated by Plasma, improves the antiviral property of seed, meets the demand of producing.
accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation below, wherein:
Fig. 1 is structural representation of the present invention.
Wherein: 1, the first discharging chamber, 2, discharging opening, 3, negative pressure device, 4, reaction chamber, 5, electrode assemblie, 6, charging aperture, the 7, second feed cavity, 8, gas access, 9, rabbling mechanism, 10, screw feeding mechanism, the 11, second discharging chamber, the 12, first feed cavity.
Embodiment
Embodiment 1
As shown in Figure 1, as the first preferred embodiment, the present embodiment provides a kind of seed plasma processing apparatus, comprise feed cavity, reaction chamber 4, electrode assemblie 5, high frequency electric source (not shown), discharging chamber and negative pressure device 3, the gas access 8 that reaction chamber 4 right sides are provided with charging aperture 6 and pass into for reacting gas, reaction chamber 4 left sides are provided with discharging opening 2, reaction chamber 4 feed inlet ends higher than reaction chamber 4 discharge port ends and with the placement of 5 °～60 °, horizontal plane angle of inclination, preferably 10 ° of the present embodiment; Feed cavity comprises that the first feed cavity 12, the second feed cavity 7 and screw feeding mechanism 10, the first feed cavity 12 that are connected are successively connected with negative pressure device 3, and screw feeding mechanism 10 is connected with charging aperture 6; Discharging chamber comprises that the first discharging chamber 1 and 11, the second discharging chambeies 11, the second discharging chamber that are connected are successively connected with negative pressure device 3, and the first discharging chamber 1 is connected with discharging opening 2; In reaction chamber 4, be provided with rabbling mechanism 9, rabbling mechanism 9 comprises shaft and is arranged at the stirring vane on shaft, electrode assemblie 5 is a pair of symmetrically arranged annular electrode, and electrode assemblie 5 is arranged at the outer surface of reaction chamber 4, and high frequency electric source is electrically connected to electrode assemblie 5.
The present embodiment can be realized charging, Cement Composite Treated by Plasma, discharging and carry out simultaneously, and continual charging and discharging, saves time, and enhances productivity.
The present embodiment also provides a kind of seed method of plasma processing, comprises the following steps:
Step 1, cleans, and seed is washed, with cold wind, dried up;
Step 2, charging, seed clean in step 1 is put in the first feed cavity 12, 3 pairs of the first feed cavity 12 of negative pressure device, the second feed cavity 7, reaction chamber 4, the first discharging chamber 1, the second discharging chamber 11 vacuumizes, after vacuumizing, seed is entered to the second feed cavity 7 from the first feed cavity 12, then by screw feeding mechanism 10, from charging aperture 6, enter reaction chamber 4, if the first feed cavity 12 hollows, by the port closing of the first feed cavity 12, toward charging in the first feed cavity 12, after charging completes, the first feed cavity 12 is vacuumized, the outlet of then opening the first feed cavity 12 continues charging, keep continuous feed,
Step 4, discharging, seed after processing in step 3 is entered to the first discharging chamber 1 and the second discharging chamber 11 successively from discharging opening 2, if fill in the second discharging chamber 11,, by the first discharging chamber 1 port closing, the second discharging chamber 11 dischargings, after discharging completes vacuumize the second discharging chamber 11, then continuation discharging is opened in the first discharging chamber 1 outlet, keeps continuous discharge.
Reacting gas in the present embodiment step 3 is neon, argon gas, nitrogen or helium, is specifically not construed as limiting.The present embodiment is simple and reasonable, and reacting gas can increase the output of seed after to seed Cement Composite Treated by Plasma, improves the antiviral property of seed, meets the demand of producing.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a seed plasma processing apparatus, it is characterized in that, comprise feed cavity, reaction chamber, electrode assemblie, high frequency electric source, discharging chamber and negative pressure device, the gas access that described reaction chamber one side is provided with charging aperture and passes into for reacting gas, described reaction chamber opposite side is provided with discharging opening, reaction chamber feed inlet end is placed higher than reaction chamber discharge port end and with horizontal plane angle of inclination A, described feed cavity is connected with described charging aperture, described discharging chamber is connected with described discharging opening, in described reaction chamber, be provided with rabbling mechanism, described electrode assemblie is arranged at described reaction chamber outer surface, described high frequency electric source is electrically connected to described electrode assemblie, described negative pressure device respectively with described feed cavity, described discharging chamber connects.
2. seed plasma processing apparatus according to claim 1, is characterized in that, described angle A is 5 °～60 °.
3. seed plasma processing apparatus according to claim 1, is characterized in that, described electrode assemblie is a pair of symmetrically arranged annular electrode.
4. seed plasma processing apparatus according to claim 1, is characterized in that, described rabbling mechanism comprises shaft and is arranged at the stirring vane on described shaft.
5. according to the arbitrary described seed plasma processing apparatus of claim 1-4, it is characterized in that, described feed cavity comprises the first feed cavity and the second feed cavity being connected successively, and described the first feed cavity is connected with described negative pressure device, and described the second feed cavity is connected with described charging aperture.
6. seed plasma processing apparatus according to claim 5, is characterized in that, also comprises screw feeding mechanism, and described screw feeding mechanism is arranged between described the second feed cavity and described charging aperture.
7. according to the arbitrary described seed plasma processing apparatus of claim 1-4, it is characterized in that, described discharging chamber comprises the first discharging chamber and the second discharging chamber being connected successively, and described the second discharging chamber is connected with described negative pressure device, and described the first discharging chamber is connected with described discharging opening.
8. the seed method of plasma processing as described in as arbitrary in claim 1-7, is characterized in that, comprises the following steps:
Step 1, cleans, and seed is washed, dried up;
Step 2, charging, seed clean in step 1 is put in the first feed cavity, negative pressure device vacuumizes the first feed cavity, the second feed cavity, reaction chamber, the first discharging chamber, the second discharging chamber, then seed is entered to the second feed cavity from the first feed cavity, then from charging aperture, enter reaction chamber, if the first feed cavity hollow, by the port closing of the first feed cavity, toward charging in the first feed cavity, after the first feed cavity charging completes, the first feed cavity is vacuumized, the outlet of then opening the first feed cavity continues charging, keeps continuous feed;
Step 3, Cement Composite Treated by Plasma, high frequency electric source drive electrode assembly generates electric field, and then reacting gas enters reaction chamber from gas access, and reacting gas carries out Cement Composite Treated by Plasma to seed after electric field ionization;
Step 4, discharging, seed after processing in step 3 is entered to the first discharging chamber and the second discharging chamber successively from discharging opening, if fill in the second discharging chamber,, by the first discharging chamber port closing, the second discharging chamber discharging, after discharging completes vacuumizes the second discharging chamber, then continuation discharging is opened in the first discharging chamber outlet, keeps continuous discharge.
9. seed method of plasma processing according to claim 8, is characterized in that, in described step 1, with cold wind, dries up.
10. seed method of plasma processing according to claim 8, is characterized in that, the reacting gas in described step 3 is neon, argon gas, nitrogen or helium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310668647.7A CN103650699A (en) | 2013-12-11 | 2013-12-11 | Plasma treatment device for seeds and treatment method of plasma treatment device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310668647.7A CN103650699A (en) | 2013-12-11 | 2013-12-11 | Plasma treatment device for seeds and treatment method of plasma treatment device |
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| CN103650699A true CN103650699A (en) | 2014-03-26 |
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| CN201310668647.7A Pending CN103650699A (en) | 2013-12-11 | 2013-12-11 | Plasma treatment device for seeds and treatment method of plasma treatment device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105723861A (en) * | 2016-04-15 | 2016-07-06 | 常州机电职业技术学院 | Large particle seed plasma activation treatment device and treatment process |
| CN106961874A (en) * | 2017-04-08 | 2017-07-21 | 阜南县永盛工艺品有限公司 | A kind of method for promoting twigs of the chaste tree seed to sprout |
| CN107306536A (en) * | 2017-07-25 | 2017-11-03 | 常州机电职业技术学院 | Plasma seed activation device and seed activation method |
| CN113287386A (en) * | 2021-05-17 | 2021-08-24 | 安徽中科大禹科技有限公司 | Plasma seed treatment device |
| CN115529887A (en) * | 2022-10-26 | 2022-12-30 | 河南大豫物理农业技术研究院有限公司 | Method for treating plant seeds by low-temperature plasma |
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| CN2807733Y (en) * | 2005-06-07 | 2006-08-23 | 山西省农业科学院旱地农业研究中心 | Plasma treating apparatus for activating crop seed |
| CN1914972A (en) * | 2006-09-08 | 2007-02-21 | 邵汉良 | Seed treatment instrument of cold plasma |
| WO2007124945A1 (en) * | 2006-04-28 | 2007-11-08 | Fachhochschule Hildesheim/Holzminden/Göttingen | Method and device for treating seeds with a physical plasma at atmospheric pressure |
| CN101669416A (en) * | 2008-09-12 | 2010-03-17 | 杨思泽 | Method for treating plant seeds by plasmas and device for realizing method |
| CN201892820U (en) * | 2010-11-15 | 2011-07-06 | 广州市科密化学有限公司 | Three-dimensional device for used for printer for toner continuous production |
| CN102921328A (en) * | 2012-11-18 | 2013-02-13 | 青岛嘉禾丰肥业有限公司 | Agitator and using method of agitator |
| CN203608531U (en) * | 2013-12-11 | 2014-05-28 | 苏州市奥普斯等离子体科技有限公司 | Seed plasma processing device |
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2013
- 2013-12-11 CN CN201310668647.7A patent/CN103650699A/en active Pending
Patent Citations (7)
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| WO2007124945A1 (en) * | 2006-04-28 | 2007-11-08 | Fachhochschule Hildesheim/Holzminden/Göttingen | Method and device for treating seeds with a physical plasma at atmospheric pressure |
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| CN201892820U (en) * | 2010-11-15 | 2011-07-06 | 广州市科密化学有限公司 | Three-dimensional device for used for printer for toner continuous production |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105723861A (en) * | 2016-04-15 | 2016-07-06 | 常州机电职业技术学院 | Large particle seed plasma activation treatment device and treatment process |
| CN105723861B (en) * | 2016-04-15 | 2018-08-07 | 常州机电职业技术学院 | Large particle seed plasma activation treatment device and treatment process |
| CN106961874A (en) * | 2017-04-08 | 2017-07-21 | 阜南县永盛工艺品有限公司 | A kind of method for promoting twigs of the chaste tree seed to sprout |
| CN107306536A (en) * | 2017-07-25 | 2017-11-03 | 常州机电职业技术学院 | Plasma seed activation device and seed activation method |
| CN113287386A (en) * | 2021-05-17 | 2021-08-24 | 安徽中科大禹科技有限公司 | Plasma seed treatment device |
| CN115529887A (en) * | 2022-10-26 | 2022-12-30 | 河南大豫物理农业技术研究院有限公司 | Method for treating plant seeds by low-temperature plasma |
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Application publication date: 20140326 |