CN103471726A - Femtojoule level nanosecond pulse laser energy detection device - Google Patents
Femtojoule level nanosecond pulse laser energy detection device Download PDFInfo
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- CN103471726A CN103471726A CN2013103829549A CN201310382954A CN103471726A CN 103471726 A CN103471726 A CN 103471726A CN 2013103829549 A CN2013103829549 A CN 2013103829549A CN 201310382954 A CN201310382954 A CN 201310382954A CN 103471726 A CN103471726 A CN 103471726A
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- 238000001514 detection method Methods 0.000 title claims abstract description 24
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- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims description 8
- 238000010009 beating Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 claims description 5
- 230000008014 freezing Effects 0.000 claims description 2
- 238000007710 freezing Methods 0.000 claims description 2
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- TUOVKSNRKKDMIK-UHFFFAOYSA-N [O].[Ag].[Cs] Chemical compound [O].[Ag].[Cs] TUOVKSNRKKDMIK-UHFFFAOYSA-N 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
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- 239000010406 cathode material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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Abstract
The invention discloses a femtojoule level nanosecond pulse laser energy detection device, belonging to the technical field of optical measurement. The femtojoule level nanosecond pulse laser energy detection device comprises a convergent mirror assembly, a detector, a drive circuit and an amplification assembly, wherein the convergent mirror assembly is used for converging parallel light beams emitted from a femtojoule level nanosecond pulse laser light source to the light-sensitive surface of the detector; a PMT (Photo Multiplier Tube) detector with a silver oxygen cesium photocathode is selected as the detector, the drive circuit enables the detector to have high-sensitivity and low-dark current output through a potential-divider network and a filter network which are designed by proper high-voltage output and are matched; the bandwidth of the amplification assembly is more than 200MHz, and the output of the detector can be amplified 64 times, 512 times or 4096 times so as to meet the acquisition requirement of a subsequent application device. According to the femtojoule level nanosecond pulse laser energy detection device, the detection problem of femtojoule level nanosecond pulse laser is solved, and the amplification output of an ultra-high-speed weak pulse signal is realized.
Description
Technical field
The invention belongs to the optical metrology technical field, relate generally to a set of laser energy sniffer, relate in particular to a set of burnt level ps pulsed laser and ns pulsed laser energy detection device that flies.
Background technology
No matter for wavelength, be that 1.064 μ m, pulsewidth are the micro-energy detection of laser that 5ns～1 μ s, energy are 1fJ～500fJ, be domestic or external, realizes that Measurement accuracy is all a difficult problem.Britain's National Physical Laboratory (NPL), German federal physical technique research institute (PTB), the full Russia optical physics research institute (VNIIOFI) of Russia are in 1fJ～5 * 10
5large quantity research has all been carried out in micro-energy detection aspect of fJ, but be less than, 500fJ flies the sniffer of burnt laser energy and detection method is not open.The rated capacity of the following energy section of 500fJ that only had at present USA National Institute of Standard and Technology (NIST) to disclose, the calibration range of micro-energy is 10
-13j～10
-6j, i.e. 100fJ～1 * 10
6fJ, but its LASER Light Source that can only be 15ns～250ns for laser pulse width is calibrated.More accurate and the higher calibrating installation of detection accuracy has no open report.
For the pulse laser of 1.064 μ m, micro-energy scale device of building is grinding in current China or the measurement range of micro-energy meter is 1 * 10
-6j～1 * 10
-13j, and only for 200ns with interior pulse laser.
Summary of the invention
The technical problem to be solved in the present invention is, a set of burnt level ps pulsed laser and ns pulsed laser energy detection device that flies is provided, take solve wavelength as 1.064 μ m, energy in the energy detection problem that flies burnt level ps pulsed laser and ns pulsed laser light source that is 5ns～1 μ s as 1fJ～1pJ, pulsewidth.
For solving the problems of the technologies described above, Jiao's level ps pulsed laser and ns pulsed laser energy detection device that flies provided by the invention comprises convergent mirror assembly, detector, driving circuit, amplifier module and housing; Described convergent mirror assembly comprises narrow band pass filter and convergent lens, and the centre wavelength of narrow band pass filter is 1.064 μ m, flies the burnt grade of parallel beam that the ps pulsed laser and ns pulsed laser light source sends after narrow band pass filter filters, and by convergent lens, is focused on the photosurface of detector; Described detector is for playing without freezing and containing n the photomultiplier of taking level, the material of its photocathode is silver-colored oxygen caesium, the photosurface diameter is greater than 1mm, and the response time is less than 5ns, and the value of n is according to the sensitivity and the signal to noise ratio (S/N ratio) requirement that fly burnt level ps pulsed laser and ns pulsed laser energy detection device; Described driving circuit comprises adjustable height volt circuit, potential-divider network and filter network, the effect of adjustable height volt circuit is to provide required negative high voltage for potential-divider network, potential-divider network comprises n+1 resistance in series, the non-series side of first resistance is connected with the negative high voltage output terminal of the photocathode of detector and adjustable height volt circuit, the non-series side ground connection of n+1 resistance, the n of n+1 resistance in series serial connection place takes level corresponding connected one by one with individual the beating of the n of detector, wherein, first dozen takes the series side that level is received the resistance be connected with photocathode; Filter network comprises the electric capacity of m series connection, m≤n, m depends on getting over the filter effect requirement of noise, one end ground connection of potential-divider network, the n-m+1 of another termination detector beats and to take level upper, and the m-1 of m series capacitance serial connection place and the n-m+2 of detector are individual to be beaten by grade connecting one to one to n is individual; The enlargement factor of described amplifier module is not less than 64 times, and this amplifier module comprises direct supply, current-to-voltage converting circuit, first to fourth step voltage amplifying circuit; Direct supply provides positive voltage and the negative voltage that amplitude is identical; The function of current-to-voltage converting circuit is that pulsed current signal is converted to pulse voltage signal; The enlargement factor of first to fourth step voltage amplifying circuit all is less than 9 times, and first order voltage amplifier circuit is identical with second level voltage amplifier circuit, and third level voltage amplifier circuit is identical with fourth stage voltage amplifier circuit; First order voltage amplifier circuit comprises the first operational amplifier, two electric source filter circuits, signal filter circuit, first amplifies resistance, the first anti-phase input resistance and the first stake resistance, the positive pressure input port of the first operational amplifier is connected with the positive voltage of direct supply, and the negative pressure input end of the first operational amplifier and the negative voltage of direct supply are connected; The positive pole of an electric source filter circuit connects the positive pressure input port of the first operational amplifier, minus earth; The negative pole of another electric source filter circuit connects the negative pressure input end of the first operational amplifier, plus earth; The first amplification resistance and signal filter circuit are connected in parallel between the inverting input and output terminal of the first operational amplifier simultaneously; The first stake resistance one end ground connection, the normal phase input end of another termination the first operational amplifier; The inverting input of first anti-phase input resistance one termination the first operational amplifier; Third level voltage amplifier circuit comprises the second operational amplifier, two electric source filter circuits, signal filter circuit, second amplifies resistance and the 3rd amplifies resistance, single-pole double-throw switch (SPDT), the second anti-phase input resistance and the second stake resistance, the positive voltage of the second operational amplifier positive pressure input port and direct supply is connected, and the negative pressure input end of the second operational amplifier and the negative voltage of direct supply are connected; An electric source filter circuit positive pole connects the positive pressure input port of the second operational amplifier, minus earth; Another electric source filter circuit negative pole connects the negative pressure input end of the second operational amplifier, plus earth; Signal filter circuit is connected across between the inverting input and output terminal of the second operational amplifier; Second, third end that amplifies resistance all is connected with the output terminal of the second operational amplifier, the other end is vacant, the stiff end of single-pole double-throw switch (SPDT) is connected with the inverting input of the second operational amplifier, the other end conducting that resistance is amplified according to required enlargement ratio and with the second amplification resistance or the 3rd in the single-pole double-throw switch (SPDT) selecting side; The second stake resistance one end ground connection, the normal phase input end of another termination the second operational amplifier; The inverting input of second anti-phase input resistance one termination the second operational amplifier; Described electric source filter circuit consists of the electric capacity of three parallel connections, and one of them electric capacity is electrochemical capacitor; The bandwidth of described the first operational amplifier, the second operational amplifier all is not less than 1G; One end ground connection of current-to-voltage convertor, the other end while is connected with the other end of the first anti-phase input resistance of first order voltage amplifier circuit and the anode of detector, the other end of the first anti-phase input resistance of the output terminal of first order voltage amplifier circuit and second level voltage amplifier circuit is connected, the other end of the second anti-phase input resistance of the output terminal of second level voltage amplifier circuit and third level voltage amplifier circuit is connected, and the other end of the second anti-phase input resistance of the output terminal of third level voltage amplifier circuit and fourth stage voltage amplifier circuit is connected.
The present invention has selected without the PMT detector freezed and photocathode is silver-colored oxygen caesium material, and by suitable output impedance is set, make its response time be less than 5ns, beat and take the usage quantity of level to improve upper gain limit by increase, established technical foundation for detection flies burnt level ps pulsed laser and ns pulsed laser thus; Circuits for driving relies on potential-divider network and the filter network of suitable High voltage output and coupling design, makes detector have the output of high sensitivity and low-dark current; It is core that amplifier module used be take the operational amplifier of high bandwidth, and employing level Four Design of Amplification Circuit, before, two-stage amplifying circuit enlargement factor is 8 times, the enlargement factor of rear two-stage amplifying circuit can be selected 1 times or 8 times, the band that had so both guaranteed amplifier module is wider than 200MHz, also the amplification of 64 times, 512 times or 4096 times can be carried out to the output of detector, to meet the collection requirement of subsequent applications device simultaneously.The invention solves the detection problem that flies burnt level ps pulsed laser and ns pulsed laser, also realized the amplification output of hypervelocity Weak pulse signal simultaneously.
The accompanying drawing explanation
Fig. 1 is the composition frame chart that the present invention flies burnt level ps pulsed laser and ns pulsed laser energy detection device.
Fig. 2 is the schematic diagram of driving circuit shown in Fig. 1.
Fig. 3 is the circuit diagram of amplifier module shown in Fig. 1.
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, the present invention is described in further detail.
As shown in Figure 1 and Figure 2, the preferred embodiment that the present invention flies burnt level ps pulsed laser and ns pulsed laser energy detection device comprises convergent mirror assembly, detector, driving circuit and the amplifier module be fixed in housing 5.The convergent mirror assembly comprises narrow band pass filter and convergent lens, and the centre wavelength of narrow band pass filter is 1.064 μ m, flies the burnt grade of parallel beam that the ps pulsed laser and ns pulsed laser light source sends after narrow band pass filter filters, and by convergent lens, is focused on the photosurface of detector.The bore of convergent lens is 80mm.Housing 5 is the cavitys that use opaque material to make, have in end face central authorities the light hole that is greater than tested beam diameter, the present embodiment middle shell 5 diameters are that 120mm, length are 260mm, the light hole diameter is 82mm, allows diameter 80mm to enter with the interior burnt grade of light that the ps pulsed laser and ns pulsed laser light source sends that flies.
Detector need to realize that to wavelength be the energy detection that flies burnt level ps pulsed laser and ns pulsed laser light source that 1.064 μ m, energy are 5ns～1 μ s in 1fJ～1pJ, pulsewidth, require detector photosensitive area diameter to be greater than 1mm, spectral response range contains 1.064 μ m, and the response time is less than 5ns.Be generally used for the photodiode of the detector of wavelength 1.064 μ m laser as indium gallium arsenic (InGaAs), boronation indium (InP), silicon materials, or the photomultiplier (PMT) of InP, InGaAs cathode material all can't meet above-mentioned requirements.
And the PMT detector that the anticathode material is silver-colored oxygen caesium (Ag-O-Cs) is beaten the usage quantity of taking level by increase, can make its gain reach 10
6above, the response time is less than 5ns, and in the total sensitivity at 1.064 μ m places, more than 500A/W, signal to noise ratio (S/N ratio) is greater than 10.In the present embodiment, detector adopts the R5108 type PMT detector of the loose company in Japanese shore, its cathode material is silver-colored oxygen caesium (Ag-O-Cs), during this detector uses without refrigeration, and containing n=9 is followed successively by beating of DY1, DY2, DY3, DY4, DY5, DY6, DY7, DY8, DY9 and takes grade, photosurface is of a size of 18mm * 16mm, and when this detector is 50 Ω in output impedance, the corresponding response time is 1.1ns.
Driving circuit, for detector is driven, makes detector normally carry out opto-electronic conversion, realizes needed gain and signal to noise ratio (S/N ratio).Shown in Fig. 3, driving circuit comprises adjustable height volt circuit, potential-divider network and filter network, and the effect of adjustable height volt circuit is to provide required negative high voltage for potential-divider network.In the present embodiment, comprise+12V of adjustable height volt circuit direct supply, high-pressure modular N3, adjustable resistance W1, wave filter, wave filter is right+and the 12V direct supply carries out filtering, and high-pressure modular N3 general+12V voltage transitions becomes negative high voltage.Adjustable resistance W1 full scale resistance is 50K Ω.High-pressure modular N3 model is C6919-01C4, and wave filter consists of two electric capacity of parallel connection, and one of them electric capacity is electrochemical capacitor C4, and the appearance value is 220 μ F, and the appearance value of another capacitor C 5 is 0.1 μ F.+ 12V direct supply is connected with the voltage input end a1 of wave filter positive terminal and high-pressure modular N3 simultaneously, the negative pole end ground connection of wave filter, the shell of high-pressure modular N3 and grounding ports a2 ground connection, the sliding end of adjustable resistance W1 is connected with the voltage-regulation end a3 of high-pressure modular N3, two stiff ends of adjustable resistance W1 connect respectively reference voltage input terminal a4 and the ground of high-pressure modular N3, the high-voltage output end b1 of high-pressure modular N3 connects the photocathode K of detector, when the voltage-regulation end a3 of high-pressure modular N3 and the resistance between reference voltage input terminal a4 are 50K Ω, corresponding high-voltage output end b1 output voltage is-1500V, when the voltage-regulation end a3 of high-pressure modular N3 and the resistance between reference voltage input terminal a4 are 41.7K Ω, corresponding high-voltage output end b1 output voltage is-1250V, in the present embodiment, by regulating adjustable resistance W1, make the voltage-regulation end a3 of high-pressure modular N3 and the resistance between reference voltage input terminal a4 be fixed on 41.7K Ω.
Potential-divider network comprises ten resistance in seriess, the non-series side of first resistance R 1 is connected with the negative high voltage output terminal b1 of the photocathode K of detector and adjustable height volt circuit, the non-series side ground connection of the tenth resistance R 10, beating for nine of nine serial connection places of ten resistance in seriess and detector takes level DY1～DY9 corresponding connected one by one, wherein, first dozen takes the series side that level DY1 receives resistance R 1.Resistance R 1 resistance is 500K Ω, and resistance R 2～R10 resistance is 300K Ω.Under this potential-divider network effect, each of detector dozen takes stage head to be about 115V, the photocathode K of detector and first dozen take the pressure reduction between level DY1 to be about 200V, and this kind of dividing potential drop model function, after detector, can effectively improve the gain of detector and significantly reduce anode output dark current.
Filter network comprises the electric capacity of m series connection, m≤n, m depends in circuit getting over the filter effect requirement of noise, one end ground connection of filter network, the n-m+1 of another termination detector beats and to take level upper, and the m-1 of m series capacitance serial connection place and the n-m+2 of detector are individual to be beaten by grade connecting one to one to n is individual.Filter network is beaten the noise of getting over by inter-stage in order to the filtering detector, reduce the anode output noise, beating of detector takes level to exist and get over noise when on-load voltage, this kind of noise can increase when having tested light beam to occur, along with beating the progression of taking level, increase simultaneously, get over noise and superpose step by step, more to beating of back, take level to get over noise larger, have a strong impact on the signal to noise ratio (S/N ratio) of output signal; In the present embodiment, filter network m=3, the appearance value of three capacitor C 1, C2, C3 is 0.01 μ F, thereby filtering is added to three of detector, beats the inter-stage of taking on level DY7, a DY8, DY9 and gets over noise, has reduced the output noise of the anode P of detector.
Under the effect of driving circuit, detector is that 1.064 μ m, energy are that 1fJ～1pJ, pulsewidth are 5ns～1 μ s pulsed laser light source for wavelength, can realize 8 * 10
6gain, the total sensitivity at 1.064 μ m places is about 750A/W, its minimum signal to noise ratio (S/N ratio) is also more than 30 times, output current I
pMTscope is 0.0015mA～1.5mA.
For the signal after making to amplify is easy to be gathered or process by follow up device, require the enlargement factor of amplifier module to be not less than 64 times, the circuit cut off band width is not less than 200MHz.Amplifier module comprises direct supply, current-to-voltage converting circuit, first to fourth step voltage amplifying circuit.Provide+5V of direct supply and-voltage of 5V.The function of current-to-voltage converting circuit is that pulsed current signal is converted to pulse voltage signal.For meeting the requirement of circuit cut off band width, the enlargement factor of first to fourth step voltage amplifying circuit all is less than 9 times.First order voltage amplifier circuit is identical with second level voltage amplifier circuit, and third level voltage amplifier circuit is identical with fourth stage voltage amplifier circuit.First order voltage amplifier circuit comprises the first operational amplifier N1, two electric source filter circuits, signal filter circuit, and resistance is that first of 400 Ω amplify the first stake resistance R14 that the first anti-phase input resistance R 12 that resistance R 13, resistance are 50 Ω and resistance are 50 Ω.The high speed and precision operational amplifier A D8009 that the first operational amplifier N1 is AD company, this operational amplifier bandwidth is 1GHz.Connect+5V of the positive pressure input port of the first operational amplifier N1, first operational amplifier N1 negative pressure input termination-5V; The positive pole of an electric source filter circuit connects the positive pressure input port of the first operational amplifier N1, minus earth; The negative pole of another electric source filter circuit connects the negative pressure input end of the first operational amplifier N1, plus earth; The first amplification resistance R 13 and signal filter circuit are connected in parallel between the inverting input and output terminal of the first operational amplifier N1 simultaneously; Signal filter circuit comprises capacitor C 6, the first stake resistance R14 mono-end ground connection that an appearance value is 0.0001 μ F, the normal phase input end of another termination the first operational amplifier N1; The inverting input of first anti-phase input resistance R 12 1 termination the first operational amplifier N1;
Third level voltage amplifier circuit comprises that the second operational amplifier N2, two electric source filter circuits, signal filter circuit, resistances are that to amplify resistance R 20, resistance be that the 3rd of 400 Ω amplify the second stake resistance that the second anti-phase input resistance R 18 that resistance R 21, single-pole double-throw switch (SPDT), resistance are 50 Ω and resistance are 50 Ω to second of 50 Ω.The second operational amplifier N2 also selects the high speed and precision operational amplifier A D8009 of AD company, connect+5V of the positive pressure input port of the second operational amplifier N2, negative pressure input termination-5V; An electric source filter circuit positive pole connects the positive pressure input port of the second operational amplifier N2, minus earth; Another electric source filter circuit negative pole connects the negative pressure input end of the second operational amplifier N2, plus earth; Signal filter circuit is connected across between the inverting input and output terminal of the second operational amplifier N2; Two are amplified resistance one end and all are connected with the second operational amplifier N2 output terminal, the other end is vacant, the stiff end of single-pole double-throw switch (SPDT) is connected with inverting input, and the single-pole double-throw switch (SPDT) selecting side is connected with the second amplification resistance R 20 or the 3rd other end that amplifies resistance R 21 according to required enlargement ratio; The second stake resistance R19 mono-end ground connection, the normal phase input end of another termination the second operational amplifier N2; The inverting input of second anti-phase input resistance R 18 1 termination the second operational amplifier N2; Electric source filter circuit consists of the electric capacity of three parallel connections, and the appearance value of three electric capacity is respectively 10 μ F, 0.1 μ F and 0.001 μ F, and the electric capacity that wherein the appearance value is 10 μ F is electrochemical capacitor.
One end ground connection of current-to-voltage convertor, the other end while is connected with the other end of the first anti-phase input resistance R 12 of first order voltage amplifier circuit and the anode P of detector, the other end of the first anti-phase input resistance R 12 of the output terminal of first order voltage amplifier circuit and second level voltage amplifier circuit is connected, the other end of the second anti-phase input resistance R 18 of the output terminal of second level voltage amplifier circuit and third level voltage amplifier circuit is connected, the other end of the second anti-phase input resistance R 18 of the output terminal of third level voltage amplifier circuit and fourth stage voltage amplifier circuit is connected.
Under the acting in conjunction of above circuit, the output voltage U of current-to-voltage converting circuit in amplifier module
1meet U
1=I
pMT* R11, U
1the value scope be 0.075mV～75mV, first order voltage amplifier circuit output U
2meet U
2=(R13/R12) * U
1, second level voltage amplifier circuit output U
3meet U
3=(R13/R12) * U
2, third level voltage amplifier circuit output U
4meet U
4=((R20 or R21)/R18) * U
3, fourth stage voltage amplifier circuit output U
5meet U
5=((R20 or R21)/R18) * U
4, amplifier module output voltage, i.e. fourth stage voltage amplifier circuit output U
5scope be 300mV～4800mV, output impedance is 50 ohm, meets the collection requirement of subsequent applications device.
Claims (3)
1. one kind flies burnt level ps pulsed laser and ns pulsed laser energy detection device, comprises convergent mirror assembly, detector, driving circuit and amplifier module, it is characterized in that: described convergent mirror assembly comprises narrow band pass filter and convergent lens, the centre wavelength of narrow band pass filter is 1.064 μ m, fly the burnt grade of parallel beam that the ps pulsed laser and ns pulsed laser light source sends after narrow band pass filter filters, focused on by convergent lens on the photosurface of detector, described detector is for playing without freezing and containing n the photomultiplier of taking level, the material of its photocathode (K) is silver-colored oxygen caesium, the photosurface diameter is greater than 1mm, and the response time is less than 5ns, and the value of n is according to the sensitivity and the signal to noise ratio (S/N ratio) requirement that fly burnt level ps pulsed laser and ns pulsed laser energy detection device, described driving circuit comprises the adjustable height volt circuit, potential-divider network and filter network, the effect of adjustable height volt circuit is to provide required negative high voltage for potential-divider network, potential-divider network comprises n+1 resistance in series, the non-series side of first resistance is connected with the photocathode (K) of detector and the negative high voltage output terminal of adjustable height volt circuit, the non-series side ground connection of n+1 resistance, the n of n+1 resistance in series serial connection place takes level (DY1～DY9) corresponding connected one by one with individual the beating of the n of detector, wherein, the series side that first dozen takes level (DY1) to receive the resistance be connected with photocathode (K), filter network comprises the electric capacity of m series connection, m≤n, m depends on getting over the filter effect requirement of noise, one end ground connection of potential-divider network, the n-m+1 of another termination detector beats and to take level upper, and the m-1 of m series capacitance serial connection place and the n-m+2 of detector are individual to be beaten by grade connecting one to one to n is individual, the enlargement factor of described amplifier module is not less than 64 times, and this amplifier module comprises direct supply, current-to-voltage converting circuit, first to fourth step voltage amplifying circuit, direct supply provides positive voltage and the negative voltage that amplitude is identical, the function of current-to-voltage converting circuit is that pulsed current signal is converted to pulse voltage signal, the enlargement factor of first to fourth step voltage amplifying circuit all is less than 9 times, and first order voltage amplifier circuit is identical with second level voltage amplifier circuit, and third level voltage amplifier circuit is identical with fourth stage voltage amplifier circuit, first order voltage amplifier circuit comprises the first operational amplifier (N1), two electric source filter circuits, signal filter circuit, first amplifies resistance (R13), the first anti-phase input resistance (R12) and the first stake resistance (R14), the positive pressure input port of the first operational amplifier (N1) and the positive voltage of direct supply are connected, and the negative pressure input end of the first operational amplifier (N1) and the negative voltage of direct supply are connected, the positive pole of an electric source filter circuit connects the positive pressure input port of the first operational amplifier (N1), minus earth, the negative pole of another electric source filter circuit connects the negative pressure input end of the first operational amplifier (N1), plus earth, the first amplification resistance (R13) and signal filter circuit are connected in parallel between the inverting input and output terminal of the first operational amplifier (N1) simultaneously, the first stake resistance (R14) end ground connection, the normal phase input end of another termination the first operational amplifier (N1), the inverting input of first anti-phase input resistance (R12) termination first operational amplifier (N1), third level voltage amplifier circuit comprises the second operational amplifier (N2), two electric source filter circuits, signal filter circuit, second amplifies resistance (R20) and the 3rd amplifies resistance (R21), single-pole double-throw switch (SPDT), the second anti-phase input resistance (R18) and the second stake resistance (R19), the positive voltage of the second operational amplifier (N2) positive pressure input port and direct supply is connected, and the negative pressure input end of the second operational amplifier (N2) and the negative voltage of direct supply are connected, an electric source filter circuit positive pole connects the positive pressure input port of the second operational amplifier (N2), minus earth, another electric source filter circuit negative pole connects the negative pressure input end of the second operational amplifier (N2), plus earth, signal filter circuit is connected across between the inverting input and output terminal of the second operational amplifier (N2), second, third end that amplifies resistance all is connected with the output terminal of the second operational amplifier (N2), the other end is vacant, the stiff end of single-pole double-throw switch (SPDT) is connected with the inverting input of the second operational amplifier (N2), the other end conducting that resistance (R21) is amplified according to required enlargement ratio and with the second amplification resistance (R20) or the 3rd in the single-pole double-throw switch (SPDT) selecting side, the second stake resistance (R19) end ground connection, the normal phase input end of another termination the second operational amplifier (N2), the inverting input of second anti-phase input resistance (R18) termination second operational amplifier (N2), described electric source filter circuit consists of the electric capacity of three parallel connections, and one of them electric capacity is electrochemical capacitor, the bandwidth of described the first operational amplifier (N1), the second operational amplifier (N2) all is not less than 1G, one end ground connection of current-to-voltage convertor, the other end while is connected with the other end of the first anti-phase input resistance (R12) of first order voltage amplifier circuit and the anode (P) of detector, the other end of the first anti-phase input resistance (R12) of the output terminal of first order voltage amplifier circuit and second level voltage amplifier circuit is connected, the other end of the second anti-phase input resistance (R18) of the output terminal of second level voltage amplifier circuit and third level voltage amplifier circuit is connected, the other end of the second anti-phase input resistance (R18) of the output terminal of third level voltage amplifier circuit and fourth stage voltage amplifier circuit is connected.
2. according to claim 1ly fly burnt level ps pulsed laser and ns pulsed laser energy detection device, it is characterized in that: the enlargement factor of described first order voltage amplifier circuit is 8 times, and described third level voltage amplifier circuit enlargement factor is 1 times or 8 times.
3. Jiao's level ps pulsed laser and ns pulsed laser energy detection device that flies according to claim 1 and 2, is characterized in that: n=9, m=3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310382954.9A CN103471726B (en) | 2013-08-28 | 2013-08-28 | Fly burnt level ps pulsed laser and ns pulsed laser energy detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310382954.9A CN103471726B (en) | 2013-08-28 | 2013-08-28 | Fly burnt level ps pulsed laser and ns pulsed laser energy detection device |
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| Publication Number | Publication Date |
|---|---|
| CN103471726A true CN103471726A (en) | 2013-12-25 |
| CN103471726B CN103471726B (en) | 2015-11-18 |
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