CN103450812B - 一种用于蓝宝石衬底的抛光液 - Google Patents
一种用于蓝宝石衬底的抛光液 Download PDFInfo
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- CN103450812B CN103450812B CN201310009198.5A CN201310009198A CN103450812B CN 103450812 B CN103450812 B CN 103450812B CN 201310009198 A CN201310009198 A CN 201310009198A CN 103450812 B CN103450812 B CN 103450812B
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- CN
- China
- Prior art keywords
- polishing
- sapphire substrate
- sapphire
- silica sol
- add
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- 238000005498 polishing Methods 0.000 title claims abstract description 124
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 50
- 239000010980 sapphire Substances 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000008367 deionised water Substances 0.000 claims abstract description 20
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 20
- 239000008139 complexing agent Substances 0.000 claims abstract description 9
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002994 raw material Substances 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 26
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 13
- 150000003839 salts Chemical class 0.000 claims description 13
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 12
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000004471 Glycine Substances 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical group [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 4
- 235000006666 potassium iodate Nutrition 0.000 claims description 4
- 239000001230 potassium iodate Substances 0.000 claims description 4
- 229940093930 potassium iodate Drugs 0.000 claims description 4
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 4
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 3
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 15
- 238000004140 cleaning Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 13
- 239000002002 slurry Substances 0.000 description 13
- 230000003746 surface roughness Effects 0.000 description 9
- 238000000227 grinding Methods 0.000 description 7
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000005543 nano-size silicon particle Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010437 gem Substances 0.000 description 3
- 229910001751 gemstone Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- -1 salt compound Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000020354 squash Nutrition 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
| 抛光液名称 | 表面形貌 | 去除速率(nm/min) | 表面粗糙度(nm) |
| NP-10型抛光液 | 少量划痕 | 60.3 | 0.43 |
| 5180SC型抛光液 | 表面平整 | 33.5 | 0.32 |
| FA/0型抛光液 | 少量凹坑 | 87.2 | 0.44 |
| 本发明的抛光液 | 表面平整 | 101.3 | 0.20 |
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310009198.5A CN103450812B (zh) | 2013-01-10 | 2013-01-10 | 一种用于蓝宝石衬底的抛光液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310009198.5A CN103450812B (zh) | 2013-01-10 | 2013-01-10 | 一种用于蓝宝石衬底的抛光液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103450812A CN103450812A (zh) | 2013-12-18 |
| CN103450812B true CN103450812B (zh) | 2014-09-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310009198.5A Active CN103450812B (zh) | 2013-01-10 | 2013-01-10 | 一种用于蓝宝石衬底的抛光液 |
Country Status (1)
| Country | Link |
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| CN (1) | CN103450812B (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073171B (zh) * | 2014-06-24 | 2016-03-23 | 江苏天恒纳米科技股份有限公司 | 一种不锈钢表面超精密加工专用纳米浆料及其制备方法 |
| CN104449399A (zh) * | 2014-11-25 | 2015-03-25 | 河北工业大学 | 一种适用于蓝宝石a面的化学机械抛光组合物 |
| CN104449403B (zh) * | 2014-12-16 | 2017-06-23 | 河北工业大学 | 蓝宝石衬底材料的复合碱抛光液及其循环使用方法 |
| CN104592935B (zh) * | 2015-01-04 | 2016-04-27 | 江苏中晶科技有限公司 | 硬质材料研磨用加速剂 |
| CN104830234A (zh) * | 2015-04-23 | 2015-08-12 | 深圳杰明纳微电子科技有限公司 | A向蓝宝石手机盖板抛光液及制备方法 |
| CN104830236A (zh) * | 2015-05-14 | 2015-08-12 | 蓝思科技(长沙)有限公司 | C向蓝宝石抛光液及其制备方法 |
| JP6582601B2 (ja) * | 2015-06-22 | 2019-10-02 | 日立化成株式会社 | 研磨液、貯蔵液及び研磨方法 |
| CN105017970A (zh) * | 2015-06-30 | 2015-11-04 | 安徽德诺化工有限公司 | 一种用于蓝宝石衬底的抛光液及其制备方法 |
| CN105462504A (zh) * | 2015-12-11 | 2016-04-06 | 蓝思科技(长沙)有限公司 | 一种c向蓝宝石抛光液及其制备方法 |
| CN106883769A (zh) * | 2017-04-17 | 2017-06-23 | 黄美香 | 一种硅溶胶抛光液 |
| CN107418448A (zh) * | 2017-08-10 | 2017-12-01 | 深圳市佳欣纳米科技有限公司 | 一种不锈钢精密抛光液 |
| CN108359383B (zh) * | 2018-01-25 | 2021-05-04 | 湖北海汇化工科技有限公司 | 一种蓝宝石材料表面精密加工专用耐磨纳米浆料 |
| CN108500823A (zh) * | 2018-04-25 | 2018-09-07 | 哈尔滨秋冠光电科技有限公司 | 一种蓝宝石晶片的加工方法 |
| CN113755099B (zh) * | 2020-05-27 | 2022-07-12 | 万华化学集团电子材料有限公司 | 蓝宝石化学机械抛光液及其应用 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| JP2005268667A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| US8591763B2 (en) * | 2006-03-23 | 2013-11-26 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
| CN1858133A (zh) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | 用于计算机硬盘基片化学机械抛光的抛光液 |
| EP2322322B2 (en) * | 2008-06-13 | 2022-10-05 | Fujimi Incorporated | Aluminum oxide particle and polishing composition containing the same |
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- 2013-01-10 CN CN201310009198.5A patent/CN103450812B/zh active Active
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| CN103450812A (zh) | 2013-12-18 |
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| C14 | Grant of patent or utility model | ||
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Owner name: HUNAN HAOZHI TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HU NAN HAOZHI NEW MATERIALS CO., LTD. Effective date: 20141114 |
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Free format text: CORRECT: ADDRESS; FROM: 426100 YONGZHOU, HUNAN PROVINCE TO: 426141 YONGZHOU, HUNAN PROVINCE |
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Effective date of registration: 20141114 Address after: Whitewater Jianye road 426141 Yongzhou city of Hunan province Qiyang County No. 7 Patentee after: HUNAN HAOZHI TECHNOLOGY CO., LTD. Address before: Whitewater Jianye road 426100 Yongzhou city of Hunan province Qiyang County No. 7 Patentee before: Hunan Haozhi New Materials Co., Ltd. |