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CN103295642A - Shifting register and panel display - Google Patents

Shifting register and panel display Download PDF

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CN103295642A
CN103295642A CN2012103529018A CN201210352901A CN103295642A CN 103295642 A CN103295642 A CN 103295642A CN 2012103529018 A CN2012103529018 A CN 2012103529018A CN 201210352901 A CN201210352901 A CN 201210352901A CN 103295642 A CN103295642 A CN 103295642A
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shift register
clock signal
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CN103295642B (en
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李峻
夏志强
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Shanghai AVIC Optoelectronics Co Ltd
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Abstract

本发明技术方案提供一种移位寄存器和和平板显示装置,移位寄存器的第一晶体管的控制端接收第一时钟信号,第一端接收上一级移位寄存器的输出信号或起始信号,第二端连接电容的第一端和第二晶体管的控制端;第二晶体管的第一端接收第二时钟信号,第二端连接电容的第二端、第三晶体管的第一端、第四晶体管的第一端和第五晶体管的控制端,第二晶体管的第二端输出本级移位寄存器的输出信号;第三晶体管的控制端接收第一时钟信号,第二端连接第四晶体管的第二端和第五晶体管的第二端,第三晶体管的第二端接收低电平信号;第四晶体管的控制端连接第五晶体管的第一端和单元的负极端;晶体管单元的正极端接收第二时钟信号。

Figure 201210352901

The technical solution of the present invention provides a shift register and a flat panel display device, the control end of the first transistor of the shift register receives the first clock signal, the first end receives the output signal or the start signal of the shift register of the upper stage, The second end is connected to the first end of the capacitor and the control end of the second transistor; the first end of the second transistor receives the second clock signal, and the second end is connected to the second end of the capacitor, the first end of the third transistor, the fourth The first end of the transistor and the control end of the fifth transistor, the second end of the second transistor outputs the output signal of the shift register of the current stage; the control end of the third transistor receives the first clock signal, and the second end is connected to the fourth transistor The second terminal and the second terminal of the fifth transistor, the second terminal of the third transistor receives a low level signal; the control terminal of the fourth transistor is connected to the first terminal of the fifth transistor and the negative terminal of the unit; the positive terminal of the transistor unit Receive a second clock signal.

Figure 201210352901

Description

移位寄存器和平板显示装置Shift register and flat panel display device

技术领域 technical field

本发明涉及液晶显示领域,特别涉及一种移位寄存器和平板显示装置。The invention relates to the field of liquid crystal display, in particular to a shift register and a flat panel display device.

背景技术 Background technique

在液晶显示器(LCD)中,或者在结构与之相似的其他平板显示器比如电子书、有机发光二极管柔性显示器中,栅驱动电路和数据驱动电路都是后期在组装的时候贴附到显示面板上的,而驱动电路的造价高,组装贴附工艺也要花费大量的工序、人力和时间。In liquid crystal displays (LCDs), or in other flat panel displays with similar structures such as e-books and organic light-emitting diode flexible displays, gate drive circuits and data drive circuits are attached to the display panel at a later stage during assembly. , and the cost of the drive circuit is high, and the assembly and attachment process also takes a lot of work, manpower and time.

为了降低成本,非晶硅栅驱动(Amorphous Silicon Gate,ASG)技术被提出。ASG技术是在平板显示器制造过程中同步的将栅极驱动电路集成在显示面板的非显示区域,例如液晶显示面板的边框区域。由于采用ASG技术可以省去原来的栅极驱动电路,提高集成度,减少外部元件,降低制造成本,因此ASG技术被越来越多地应用。In order to reduce the cost, the Amorphous Silicon Gate (ASG) technology was proposed. ASG technology is to synchronously integrate the gate drive circuit in the non-display area of the display panel, such as the frame area of the liquid crystal display panel, during the manufacturing process of the flat panel display. Since the use of ASG technology can save the original gate drive circuit, improve integration, reduce external components, and reduce manufacturing costs, ASG technology is increasingly used.

在每一行像素单元旁,单独产生栅极驱动信号的电路结构称为ASG单元。ASG单元通常具有一个移位寄存器的结构,整体的ASG驱动电路是ASG单元在所有行的重复,或者是奇偶行ASG单元的隔行重复。栅极驱动信号与像素阵列中的像素单元的开关元件(例如薄膜晶体管TFT)连接,控制所述开关元件的导通和断开。Next to each row of pixel units, the circuit structure that independently generates gate driving signals is called an ASG unit. The ASG unit usually has a shift register structure, and the overall ASG driving circuit is the repetition of the ASG unit in all rows, or the interlaced repetition of the ASG unit in odd and even rows. The gate driving signal is connected to the switching element (such as the thin film transistor TFT) of the pixel unit in the pixel array, and controls the switching element to be turned on and off.

如图1所示,ASG驱动电路由一系列的ASG单元(移位寄存器)121组成。ASG单元121包括输入节点IN、输出节点OUT、电压源节点V1和时钟信号节点C1和C2。输入节点IN输入起始信号或上一级输出信号STV,输出节点OUT输出本级输出信号GoutN,电压源节点V1输入低电平信号VGL,时钟信号节点C1和C2输入相位互补的时钟信号CLK和CLKB。As shown in FIG. 1 , the ASG driving circuit is composed of a series of ASG units (shift registers) 121 . The ASG unit 121 includes an input node IN, an output node OUT, a voltage source node V1, and clock signal nodes C1 and C2. The input node IN inputs the start signal or the upper-level output signal STV, the output node OUT outputs the current-level output signal GoutN, the voltage source node V1 inputs the low-level signal VGL, and the clock signal nodes C1 and C2 input the phase-complementary clock signals CLK and CLKB.

如图2和图3所示,低电平信号VGL始终为低电平,ASG单元的工作过程大致如下:As shown in Figure 2 and Figure 3, the low-level signal VGL is always low-level, and the working process of the ASG unit is roughly as follows:

上一级输出信号STV为高电平、时钟信号CLKB为低电平、时钟信号CLK为高电平时:高电平的时钟信号CLK使MOS晶体管T1和MOS晶体管T3导通;MOS晶体管T1导通后,P点电压变为与上一级输出信号STV相同的高电平;P点的高电平使MOS晶体管T2导通;低电平的低电平信号VGL和时钟信号CLKB通过导通的MOS晶体管T2和MOS晶体管T3使输出信号GoutN为低电平。When the output signal STV of the upper stage is high level, the clock signal CLKB is low level, and the clock signal CLK is high level: the high level clock signal CLK turns on the MOS transistor T1 and the MOS transistor T3; the MOS transistor T1 turns on Afterwards, the voltage at point P becomes the same high level as the output signal STV of the previous stage; the high level at point P turns on the MOS transistor T2; the low level signal VGL and the clock signal CLKB pass through the turned on The MOS transistor T2 and the MOS transistor T3 make the output signal GoutN low.

上一级输出信号STV由高电平变为低电平、时钟信号CLKB变为高电平、时钟信号CLK变为低电平时:低电平的时钟信号CLK使MOS晶体管T1和MOS晶体管T3截止;P点的高电平维持MOS晶体管T2导通,高电平的时钟信号CLKB使输出信号GoutN由低电平变为高电平,并且通过电容Ct增大了P点高电平的电压值。When the output signal STV of the upper stage changes from high level to low level, the clock signal CLKB changes to high level, and the clock signal CLK changes to low level: the low level clock signal CLK turns off the MOS transistor T1 and the MOS transistor T3 ; The high level of point P maintains the conduction of MOS transistor T2, and the high level clock signal CLKB makes the output signal GoutN change from low level to high level, and increases the high level voltage value of point P through the capacitor Ct .

MOS晶体管T3通常为ASG单元的下拉管,由上述工作过程可以看出,时钟信号CLK为低电平时下拉管为截止状态。时钟信号CLK为低电平的时间大概占整个周期的50%,也就是说,下拉管在整个周期的50%的时间都为截止状态,截止的下拉管导致输出节点OUT处于浮空状态。The MOS transistor T3 is usually a pull-down transistor of the ASG unit. It can be seen from the above working process that the pull-down transistor is in an off state when the clock signal CLK is at a low level. The time when the clock signal CLK is at low level accounts for about 50% of the entire cycle, that is to say, the pull-down transistor is in the off state for 50% of the entire cycle, and the cut-off pull-down transistor causes the output node OUT to be in a floating state.

浮空状态的输出节点OUT受外界信号串扰严重,输出信号不稳定,在一定的级数之后输出波形变形严重。The output node OUT in the floating state is severely crosstalked by external signals, the output signal is unstable, and the output waveform is seriously deformed after a certain number of stages.

发明内容 Contents of the invention

本发明技术方案解决的是现有移位寄存器的输出节点受外界信号串扰严重,输出信号不稳定。The technical solution of the present invention solves the problem that the output node of the existing shift register is seriously crosstalked by external signals, and the output signal is unstable.

本发明技术方案提供一种移位寄存器,包括:第一晶体管、第二晶体管、第三晶体管、第四晶体管、第五晶体管、晶体管单元和电容;The technical solution of the present invention provides a shift register, including: a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a transistor unit, and a capacitor;

所述第一晶体管的控制端接收第一时钟信号,第一端接收上一级移位寄存器的输出信号或起始信号,第二端连接所述电容的第一端和第二晶体管的控制端;The control terminal of the first transistor receives the first clock signal, the first terminal receives the output signal or the start signal of the upper stage shift register, and the second terminal is connected to the first terminal of the capacitor and the control terminal of the second transistor ;

所述第二晶体管的第一端接收第二时钟信号,第二端连接所述电容的第二端、第三晶体管的第一端、第四晶体管的第一端和第五晶体管的控制端,所述第二晶体管的第二端输出本级移位寄存器的输出信号;The first end of the second transistor receives the second clock signal, the second end is connected to the second end of the capacitor, the first end of the third transistor, the first end of the fourth transistor, and the control end of the fifth transistor, The second terminal of the second transistor outputs the output signal of the shift register of the current stage;

所述第三晶体管的控制端接收所述第一时钟信号,第二端连接所述第四晶体管的第二端和所述第五晶体管的第二端,所述第三晶体管的第二端接收低电平信号;The control terminal of the third transistor receives the first clock signal, the second terminal is connected to the second terminal of the fourth transistor and the second terminal of the fifth transistor, and the second terminal of the third transistor receives low level signal;

所述第四晶体管的控制端连接所述第五晶体管的第一端和所述单元的负极端;The control terminal of the fourth transistor is connected to the first terminal of the fifth transistor and the negative terminal of the unit;

所述晶体管单元的正极端接收所述第二时钟信号;the positive terminal of the transistor unit receives the second clock signal;

所述晶体管单元的导通电阻大于所述第五晶体管的导通电阻。The on-resistance of the transistor unit is greater than the on-resistance of the fifth transistor.

可选的,所述第一时钟信号为所述第二时钟信号的互补信号,所述低电平信号小于或等于所述第一时钟信号的低电平的电压值。Optionally, the first clock signal is a complementary signal of the second clock signal, and the low-level signal is less than or equal to a low-level voltage value of the first clock signal.

可选的,所述移位寄存器还包括:第七晶体管,所述第七晶体管的控制端接收下一级移位寄存器的输出信号,第一端连接所述电容的第一端,第二端接收所述低电平信号。Optionally, the shift register further includes: a seventh transistor, the control terminal of the seventh transistor receives the output signal of the next-stage shift register, the first terminal is connected to the first terminal of the capacitor, and the second terminal receiving the low level signal.

可选的,所述移位寄存器还包括:第八晶体管,所述第八晶体管的控制端接收所述第一时钟信号,第一端连接所述第四晶体管的控制端,第二端接收所述低电平信号。Optionally, the shift register further includes: an eighth transistor, the control terminal of the eighth transistor receives the first clock signal, the first terminal is connected to the control terminal of the fourth transistor, and the second terminal receives the clock signal. low-level signal.

可选的,所述晶体管单元包括第六晶体管,所述第六晶体管的控制端连接所述第六晶体管的第一端作为所述晶体管单元的正极端,所述第六晶体管的第二端作为所述晶体管单元的负极端,所述第六晶体管的导通电阻大于所述第五晶体管的导通电阻。Optionally, the transistor unit includes a sixth transistor, the control terminal of the sixth transistor is connected to the first terminal of the sixth transistor as the positive terminal of the transistor unit, and the second terminal of the sixth transistor serves as On the negative terminal of the transistor unit, the on-resistance of the sixth transistor is greater than the on-resistance of the fifth transistor.

可选的,所述晶体管单元包括二极管,所述二极管正极作为所述晶体管单元的正极端,所述二极管负极作为所述晶体管单元的负极端,所述二极管的导通电阻大于所述第五晶体管的导通电阻。Optionally, the transistor unit includes a diode, the anode of the diode is used as the positive terminal of the transistor unit, and the cathode of the diode is used as the negative terminal of the transistor unit, and the on-resistance of the diode is greater than that of the fifth transistor on-resistance.

可选的,所述晶体管为MOS晶体管,所述晶体管的控制端为所述MOS晶体管的栅极;Optionally, the transistor is a MOS transistor, and the control terminal of the transistor is the gate of the MOS transistor;

所述晶体管的第一端为所述MOS晶体管的源极、第二端为所述MOS晶体管的漏极,或者所述晶体管的第一端为所述MOS晶体管的漏极、第二端为所述MOS晶体管的源极。The first end of the transistor is the source of the MOS transistor, and the second end is the drain of the MOS transistor, or the first end of the transistor is the drain of the MOS transistor, and the second end is the drain of the MOS transistor. source of the MOS transistor.

可选的,所述第五晶体管的宽长比大于所述第六晶体管的宽长比。Optionally, the width-to-length ratio of the fifth transistor is greater than the width-to-length ratio of the sixth transistor.

可选的,所述第五晶体管的宽长比大于所述第六晶体管的宽长比的五倍。Optionally, the width-to-length ratio of the fifth transistor is greater than five times the width-to-length ratio of the sixth transistor.

本发明技术方案还提供一种平板显示装置,包括:像素单元和上述移位寄存器,所述移位寄存器适于产生所述像素单元所需的栅极信号。The technical solution of the present invention also provides a flat panel display device, comprising: a pixel unit and the above-mentioned shift register, and the shift register is suitable for generating a gate signal required by the pixel unit.

与现有技术相比,本发明技术方案可以在移位寄存器的输出信号产生一个脉冲后持续维持输出信号的低电平,防止移位寄存器输出节点出现浮空状态,避免输出信号受外界信号串扰,输出信号稳定。Compared with the prior art, the technical solution of the present invention can continuously maintain the low level of the output signal after the output signal of the shift register generates a pulse, prevent the output node of the shift register from floating, and avoid the output signal being crosstalked by external signals , the output signal is stable.

附图说明 Description of drawings

图1为现有移位寄存器的结构示意图;Fig. 1 is the structural representation of existing shift register;

图2为一种现有移位寄存器单元的结构示意图;Fig. 2 is a structural schematic diagram of an existing shift register unit;

图3为图2所示移位寄存器单元的输入输出信号波形示意图;Fig. 3 is a schematic diagram of input and output signal waveforms of the shift register unit shown in Fig. 2;

图4为本发明移位寄存器的实施一结构示意图;Fig. 4 is a schematic structural diagram of the implementation of the shift register of the present invention;

图5为图4所示移位寄存器的输入输出信号波形示意图;Fig. 5 is a schematic diagram of input and output signal waveforms of the shift register shown in Fig. 4;

图6为本发明移位寄存器的实施二结构示意图;Fig. 6 is a schematic structural diagram of the second implementation of the shift register of the present invention;

图7为本发明移位寄存器的实施三结构示意图;Fig. 7 is the implementation three structure schematic diagrams of the shift register of the present invention;

图8为图7所示移位寄存器单元的输入输出信号波形示意图。FIG. 8 is a schematic diagram of input and output signal waveforms of the shift register unit shown in FIG. 7 .

具体实施方式 Detailed ways

下面结合附图对本发明的具体实施方式做详细的说明。在下列段落中参照附图以举例方式更具体地描述本发明。根据下列说明,本发明的优点和特征将更清楚。The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. The advantages and features of the present invention will become clearer from the following description.

如图4所示,本发明实施例一提供一种移位寄存器,包括:第一晶体管M1、第二晶体管M2、第三晶体管M3、第四晶体管M4、第五晶体管M5、晶体管单元11和电容C1。As shown in Figure 4, Embodiment 1 of the present invention provides a shift register, including: a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a fifth transistor M5, a transistor unit 11 and a capacitor C1.

所述第一晶体管M1的控制端接收第一时钟信号CLK,第一端接收上一级移位寄存器的输出信号或起始信号STV,第二端连接所述电容C1的第一端和第二晶体管M2的控制端;The control terminal of the first transistor M1 receives the first clock signal CLK, the first terminal receives the output signal of the upper stage shift register or the start signal STV, and the second terminal is connected to the first terminal and the second terminal of the capacitor C1. A control terminal of the transistor M2;

所述第二晶体管M2的第一端接收第二时钟信号CLKB,第二端连接所述电容C1的第二端、第三晶体管M3的第一端、第四晶体管M4的第一端和第五晶体管M5的控制端,所述第二晶体管M2的第二端输出本级移位寄存器的输出信号GoutN;The first end of the second transistor M2 receives the second clock signal CLKB, and the second end is connected to the second end of the capacitor C1, the first end of the third transistor M3, the first end of the fourth transistor M4, and the fifth The control terminal of the transistor M5, the second terminal of the second transistor M2 outputs the output signal GoutN of the shift register of the current stage;

所述第三晶体管M3的控制端接收所述第一时钟信号CLK,第二端连接所述第四晶体管M4的第二端和所述第五晶体管M5的第二端,所述第三晶体管M3的第二端接收低电平信号VGL;The control terminal of the third transistor M3 receives the first clock signal CLK, the second terminal is connected to the second terminal of the fourth transistor M4 and the second terminal of the fifth transistor M5, and the third transistor M3 The second end of the receiving low-level signal VGL;

所述第四晶体管M4的控制端连接所述第五晶体管M5的第一端和所述晶体管单元11的负极端;The control terminal of the fourth transistor M4 is connected to the first terminal of the fifth transistor M5 and the negative terminal of the transistor unit 11;

所述晶体管单元11的正极端接收所述第二时钟信号CLKB;The positive end of the transistor unit 11 receives the second clock signal CLKB;

所述晶体管单元11的导通电阻大于所述第五晶体管M5的导通电阻。The on-resistance of the transistor unit 11 is greater than the on-resistance of the fifth transistor M5.

所述电容C1可以存储电荷并起到第二晶体管M2的开关作用。The capacitor C1 can store charges and act as a switch for the second transistor M2.

所述晶体管单元11可以包括第六晶体管M6,所述第六晶体管M6的控制端连接所述第六晶体管M6的第一端作为所述晶体管单元11的正极端,所述第六晶体管M6的第二端作为所述晶体管单元11的负极端,所述第六晶体管M6的导通电阻大于所述第五晶体管M5的导通电阻。The transistor unit 11 may include a sixth transistor M6, the control terminal of the sixth transistor M6 is connected to the first terminal of the sixth transistor M6 as the positive terminal of the transistor unit 11, and the first terminal of the sixth transistor M6 The two terminals serve as negative terminals of the transistor unit 11 , and the on-resistance of the sixth transistor M6 is greater than the on-resistance of the fifth transistor M5 .

所述第六晶体管M6的导通电阻可以大于所述第五晶体管M5的导通电阻。具体的,所述第五晶体管M5和第六晶体管M6为MOS晶体管,所述第五晶体管M5的宽长比大于所述第六晶体管M6的宽长比。可选的,所述第五晶体管M5的宽长比大于所述第六晶体管M6的宽长比的五倍。The turn-on resistance of the sixth transistor M6 may be greater than the turn-on resistance of the fifth transistor M5. Specifically, the fifth transistor M5 and the sixth transistor M6 are MOS transistors, and the aspect ratio of the fifth transistor M5 is greater than that of the sixth transistor M6. Optionally, the width-to-length ratio of the fifth transistor M5 is greater than five times the width-to-length ratio of the sixth transistor M6.

所述晶体管单元11也可以包括二极管,所述二极管正极作为所述晶体管单元的正极端,所述二极管负极作为所述晶体管单元的负极端,所述二极管的导通电阻大于所述第五晶体管的导通电阻。The transistor unit 11 may also include a diode, the anode of the diode is used as the positive terminal of the transistor unit, and the cathode of the diode is used as the negative terminal of the transistor unit, and the on-resistance of the diode is greater than that of the fifth transistor. on-resistance.

结合图4和图5,本实施例一的第一时钟信号CLK为所述第二时钟信号CLKB的互补信号,低电平信号VGL小于或等于所述第一时钟信号CLK的低电平的电压值。移位寄存器工作过程大致如下:Referring to Fig. 4 and Fig. 5, the first clock signal CLK in the first embodiment is the complementary signal of the second clock signal CLKB, and the low-level signal VGL is less than or equal to the low-level voltage of the first clock signal CLK value. The working process of the shift register is roughly as follows:

上一级移位寄存器的输出信号或起始信号STV为高电平、第一时钟信号CLK为高电平、第二时钟信号CLKB为低电平时:When the output signal of the upper-stage shift register or the start signal STV is at a high level, the first clock signal CLK is at a high level, and the second clock signal CLKB is at a low level:

高电平的第一时钟信号CLK使第一晶体管M1和第三晶体管M3导通,低电平的时钟信号CLKB使第六晶体管M6截止;第一晶体管M1导通后,P点电压变为与上一级移位寄存器的输出信号或起始信号STV相同的高电平;P点的高电平使第二晶体管M2导通;低电平的低电平信号VGL和第二时钟信号CLKB通过导通的第三晶体管M3和第二晶体管M2使输出信号GoutN变为低电平;低电平的输出信号GoutN使第五晶体管M5截止;第五晶体管M5和第六晶体管M6的截止导致Q点呈现浮空状态,浮空状态的Q点电压值介于高电平和低电平之间,无法使第四晶体管M4导通,第四晶体管M4截止。The high-level first clock signal CLK turns on the first transistor M1 and the third transistor M3, and the low-level clock signal CLKB turns off the sixth transistor M6; after the first transistor M1 is turned on, the voltage at point P becomes equal to The output signal of the upper stage shift register or the same high level as the start signal STV; the high level at point P turns on the second transistor M2; the low level signal VGL and the second clock signal CLKB pass through The turned-on third transistor M3 and the second transistor M2 make the output signal GoutN become low level; the low level output signal GoutN makes the fifth transistor M5 cut off; the cutoff of the fifth transistor M5 and the sixth transistor M6 causes the Q point It is in a floating state, and the voltage value of point Q in the floating state is between high level and low level, so that the fourth transistor M4 cannot be turned on, and the fourth transistor M4 is turned off.

上一级移位寄存器的输出信号或起始信号STV由高电平变为低电平、第一时钟信号CLK为低电平、第二时钟信号CLKB为高电平时:When the output signal of the upper-stage shift register or the start signal STV changes from high level to low level, the first clock signal CLK is low level, and the second clock signal CLKB is high level:

低电平的第一时钟信号CLK使第一晶体管M1和第三晶体管M3截止,高电平的时钟信号CLKB使第六晶体管M6导通;P点的高电平维持第二晶体管M2导通;高电平的第二时钟信号CLKB使输出信号GoutN由低电平变为高电平,并且通过电容C1增大了P点高电平的电压值;高电平的输出信号GoutN使第五晶体管M5导通,由于第六晶体管M6的导通电阻大于第五晶体管M5的导通电阻,所以Q点电压保持浮空状态,第四晶体管M4截止。The low-level first clock signal CLK turns off the first transistor M1 and the third transistor M3, and the high-level clock signal CLKB turns on the sixth transistor M6; the high level at point P keeps the second transistor M2 turned on; The high-level second clock signal CLKB makes the output signal GoutN change from low level to high level, and increases the high-level voltage value of P point through the capacitor C1; the high-level output signal GoutN makes the fifth transistor M5 is turned on, and since the turn-on resistance of the sixth transistor M6 is greater than that of the fifth transistor M5, the voltage at point Q remains in a floating state, and the fourth transistor M4 is turned off.

上一级移位寄存器的输出信号或起始信号STV保持低电平、第一时钟信号CLK为高电平、第二时钟信号CLKB为低电平时:When the output signal of the shift register at the upper stage or the start signal STV is kept at low level, the first clock signal CLK is at high level, and the second clock signal CLKB is at low level:

高电平的第一时钟信号CLK使第一晶体管M1和第三晶体管M3导通,低电平的时钟信号CLKB使第六晶体管M6截止;第一晶体管M1导通后,P点电压变为与上一级移位寄存器的输出信号或起始信号STV相同的低电平;P点的低电平使第二晶体管M2截止;低电平的低电平信号VGL通过导通的第三晶体管M3使输出信号GoutN为低电平;低电平的输出信号GoutN使第五晶体管M5截止;第五晶体管M5和第六晶体管M6的截止导致Q点电压依然为浮空状态,第四晶体管M4截止;The high-level first clock signal CLK turns on the first transistor M1 and the third transistor M3, and the low-level clock signal CLKB turns off the sixth transistor M6; after the first transistor M1 is turned on, the voltage at point P becomes equal to The output signal of the upper stage shift register or the same low level as the start signal STV; the low level at point P makes the second transistor M2 cut off; the low level signal VGL of the low level passes through the third transistor M3 which is turned on The output signal GoutN is low level; the low level output signal GoutN causes the fifth transistor M5 to be cut off; the fifth transistor M5 and the sixth transistor M6 are cut off so that the Q point voltage is still in a floating state, and the fourth transistor M4 is cut off;

上一级移位寄存器的输出信号或起始信号STV保持低电平、第一时钟信号CLK为低电平、第二时钟信号CLKB为高电平时:When the output signal of the upper-stage shift register or the start signal STV is kept at low level, the first clock signal CLK is at low level, and the second clock signal CLKB is at high level:

低电平的第一时钟信号CLK使第一晶体管M1和第三晶体管M3截止,高电平的时钟信号CLKB使第六晶体管M6导通;P点的低电平维持第二晶体管M2截止,输出信号GoutN仍为低电平;低电平的输出信号GoutN使第五晶体管M5保持截止;导通的第六晶体管M6使Q点电压变为与第二时钟信号CLKB相同的高电平;高电平的Q点电压使第四晶体管M4导通;低电平信号VGL通过导通的第四晶体管M4维持输出信号GoutN为低电平。The low-level first clock signal CLK turns off the first transistor M1 and the third transistor M3, and the high-level clock signal CLKB turns on the sixth transistor M6; the low level at point P keeps the second transistor M2 off, and the output The signal GoutN is still low level; the low level output signal GoutN keeps the fifth transistor M5 off; the turned-on sixth transistor M6 makes the Q point voltage become the same high level as the second clock signal CLKB; the high level The flat Q-point voltage turns on the fourth transistor M4; the low-level signal VGL maintains the output signal GoutN at a low level through the turned-on fourth transistor M4.

此后,第六晶体管M6随着第二时钟信号CLKB周期性导通和截止,Q点在高电平和浮空状态之间周期性变化。Thereafter, the sixth transistor M6 is periodically turned on and off according to the second clock signal CLKB, and the Q point changes periodically between a high level and a floating state.

由上述工作过程可以看出,输出信号GoutN产生一个脉冲后一直保持低电平,第一时钟信号CLK为高电平时,低电平信号VGL通过导通的第三晶体管M3维持输出信号GoutN的低电平,第二时钟信号CLKB为高电平时,低电平信号VGL通过导通的第四晶体管M4维持输出信号GoutN的低电平。因此,应用本实施例一的技术方案可以防止移位寄存器输出节点出现浮空状态,避免输出信号受外界信号串扰,输出信号稳定。It can be seen from the above working process that the output signal GoutN keeps low level after generating a pulse, and when the first clock signal CLK is high level, the low level signal VGL maintains the low level of the output signal GoutN through the turned-on third transistor M3. When the second clock signal CLKB is at a high level, the low level signal VGL maintains the low level of the output signal GoutN through the turned-on fourth transistor M4. Therefore, applying the technical solution of the first embodiment can prevent the output node of the shift register from being in a floating state, prevent the output signal from being disturbed by external signals, and stabilize the output signal.

如图6所示,本发明实施例二与实施例一的区别在于还包括第七晶体管M7,所述第七晶体管M7的控制端接收下一级移位寄存器的输出信号GoutN+1,第一端连接所述电容C1的第一端,第二端接收所述低电平信号VGL。As shown in Figure 6, the difference between the second embodiment of the present invention and the first embodiment is that it also includes a seventh transistor M7, the control terminal of the seventh transistor M7 receives the output signal GoutN+1 of the shift register of the next stage, and the first The end is connected to the first end of the capacitor C1, and the second end receives the low-level signal VGL.

继续参考图5,下一级移位寄存器的输出信号GoutN+1为高电平时第七晶体管M7导通,低电平信号VGL使得P点的低电平更稳定,较小了上一级移位寄存器的输出信号或起始信号STV上的毛刺影响。Continuing to refer to Fig. 5, the seventh transistor M7 is turned on when the output signal GoutN+1 of the next-stage shift register is at a high level, and the low-level signal VGL makes the low level of point P more stable, which reduces the shift of the previous stage. Glitch effect on the output signal of the bit register or on the start signal STV.

如图7所示,本发明实施例三与实施例一的区别在于还包括第八晶体管M8,所述第八晶体管M8的控制端接收所述第一时钟信号CLK,第一端连接所述第四晶体管M4的控制端,第二端接收所述低电平信号VGL。As shown in FIG. 7 , the difference between Embodiment 3 of the present invention and Embodiment 1 is that it further includes an eighth transistor M8, the control terminal of the eighth transistor M8 receives the first clock signal CLK, and the first terminal is connected to the first clock signal CLK. The control terminal and the second terminal of the four transistors M4 receive the low level signal VGL.

如图8所示,第二时钟信号CLKB为高电平时第六晶体管M6导通,高电平的第二时钟信号CLKB通过导通的第六晶体管M6使Q点电压变为高电平;第一时钟信号CLK为高电平时第八晶体管M8导通,低电平信号VGL通过导通的第八晶体管M8使Q点电压变为低电平。这样可以避免Q点出现浮空状态,确保了第四晶体管M4的周期性导通和截止,进一步稳定了输出信号GoutN。As shown in FIG. 8 , when the second clock signal CLKB is at a high level, the sixth transistor M6 is turned on, and the high level second clock signal CLKB makes the voltage at point Q become high through the turned-on sixth transistor M6; When the clock signal CLK is at a high level, the eighth transistor M8 is turned on, and the low level signal VGL passes through the turned-on eighth transistor M8 so that the voltage at point Q becomes low. In this way, the floating state of point Q can be avoided, and the periodic turn-on and turn-off of the fourth transistor M4 is ensured, further stabilizing the output signal GoutN.

上述实施例的晶体管可以为MOS晶体管,所述晶体管的控制端为所述MOS晶体管的栅极;所述晶体管的第一端为所述MOS晶体管的源极、第二端为所述MOS晶体管的漏极,或者所述晶体管的第一端为所述MOS晶体管的漏极、第二端为所述MOS晶体管的源极。The transistor in the above embodiment may be a MOS transistor, the control terminal of the transistor is the gate of the MOS transistor; the first terminal of the transistor is the source of the MOS transistor, and the second terminal is the gate of the MOS transistor. The drain, or the first terminal of the transistor is the drain of the MOS transistor, and the second terminal is the source of the MOS transistor.

本发明实施例还提供一种平板显示装置,包括:像素单元和上述实施例所述的移位寄存器,上述实施例所述的移位寄存器适于产生所述像素单元所需的栅极信号。An embodiment of the present invention also provides a flat panel display device, including: a pixel unit and the shift register described in the above embodiment, and the shift register described in the above embodiment is suitable for generating a gate signal required by the pixel unit.

虽然本发明已以较佳实施例披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定范围。Although the present invention has been disclosed above with preferred embodiments, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention should be defined by the claims.

Claims (10)

1.一种移位寄存器,其特征在于,包括:第一晶体管、第二晶体管、第三晶体管、第四晶体管、第五晶体管、晶体管单元和电容;1. A shift register, characterized in that, comprising: a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a transistor unit and a capacitor; 所述第一晶体管的控制端接收第一时钟信号,第一端接收上一级移位寄存器的输出信号或起始信号,第二端连接所述电容的第一端和第二晶体管的控制端;The control terminal of the first transistor receives the first clock signal, the first terminal receives the output signal or the start signal of the upper stage shift register, and the second terminal is connected to the first terminal of the capacitor and the control terminal of the second transistor ; 所述第二晶体管的第一端接收第二时钟信号,第二端连接所述电容的第二端、第三晶体管的第一端、第四晶体管的第一端和第五晶体管的控制端,所述第二晶体管的第二端输出本级移位寄存器的输出信号;The first end of the second transistor receives the second clock signal, the second end is connected to the second end of the capacitor, the first end of the third transistor, the first end of the fourth transistor, and the control end of the fifth transistor, The second terminal of the second transistor outputs the output signal of the shift register of the current stage; 所述第三晶体管的控制端接收所述第一时钟信号,第二端连接所述第四晶体管的第二端和所述第五晶体管的第二端,所述第三晶体管的第二端接收低电平信号;The control terminal of the third transistor receives the first clock signal, the second terminal is connected to the second terminal of the fourth transistor and the second terminal of the fifth transistor, and the second terminal of the third transistor receives low level signal; 所述第四晶体管的控制端连接所述第五晶体管的第一端和所述晶体管单元的负极端;The control terminal of the fourth transistor is connected to the first terminal of the fifth transistor and the negative terminal of the transistor unit; 所述晶体管单元的正极端接收所述第二时钟信号;the positive terminal of the transistor unit receives the second clock signal; 所述晶体管单元的导通电阻大于所述第五晶体管的导通电阻。The on-resistance of the transistor unit is greater than the on-resistance of the fifth transistor. 2.如权利要求1所述的移位寄存器,其特征在于,所述第一时钟信号为所述第二时钟信号的互补信号,所述低电平信号小于或等于所述第一时钟信号的低电平的电压值。2. The shift register according to claim 1, wherein the first clock signal is a complementary signal of the second clock signal, and the low-level signal is less than or equal to that of the first clock signal Low level voltage value. 3.如权利要求1所述的移位寄存器,其特征在于,还包括:第七晶体管,所述第七晶体管的控制端接收下一级移位寄存器的输出信号,第一端连接所述电容的第一端,第二端接收所述低电平信号。3. The shift register according to claim 1, further comprising: a seventh transistor, the control terminal of the seventh transistor receives the output signal of the next stage shift register, and the first terminal is connected to the capacitor The first terminal, the second terminal receives the low level signal. 4.如权利要求1所述的移位寄存器,其特征在于,还包括:第八晶体管,所述第八晶体管的控制端接收所述第一时钟信号,第一端连接所述第四晶体管的控制端,第二端接收所述低电平信号。4. The shift register according to claim 1, further comprising: an eighth transistor, the control terminal of the eighth transistor receives the first clock signal, and the first terminal is connected to the fourth transistor. The control terminal, the second terminal receives the low level signal. 5.如权利要求1所述的移位寄存器,其特征在于,所述晶体管单元包括第六晶体管,所述第六晶体管的控制端连接所述第六晶体管的第一端作为所述晶体管单元的正极端,所述第六晶体管的第二端作为所述晶体管单元的负极端,所述第六晶体管的导通电阻大于所述第五晶体管的导通电阻。5. The shift register according to claim 1, wherein the transistor unit comprises a sixth transistor, and the control terminal of the sixth transistor is connected to the first terminal of the sixth transistor as the transistor unit. The positive terminal, the second terminal of the sixth transistor is used as the negative terminal of the transistor unit, and the on-resistance of the sixth transistor is greater than the on-resistance of the fifth transistor. 6.如权利要求5所述的移位寄存器,其特征在于,所述晶体管单元包括二极管,所述二极管正极作为所述晶体管单元的正极端,所述二极管负极作为所述晶体管单元的负极端,所述二极管的导通电阻大于所述第五晶体管的导通电阻。6. The shift register according to claim 5, wherein the transistor unit comprises a diode, the anode of the diode is used as the positive terminal of the transistor unit, and the cathode of the diode is used as the negative terminal of the transistor unit, The on-resistance of the diode is greater than the on-resistance of the fifth transistor. 7.如权利要求1-6任一权利要求所述的移位寄存器,其特征在于,所述晶体管为MOS晶体管,所述晶体管的控制端为所述MOS晶体管的栅极;7. The shift register according to any one of claims 1-6, wherein the transistor is a MOS transistor, and the control terminal of the transistor is the gate of the MOS transistor; 所述晶体管的第一端为所述MOS晶体管的源极、第二端为所述MOS晶体管的漏极,或者所述晶体管的第一端为所述MOS晶体管的漏极、第二端为所述MOS晶体管的源极。The first end of the transistor is the source of the MOS transistor, and the second end is the drain of the MOS transistor, or the first end of the transistor is the drain of the MOS transistor, and the second end is the drain of the MOS transistor. source of the MOS transistor. 8.如权利要求7所述的移位寄存器,其特征在于,所述第五晶体管的宽长比大于所述第六晶体管的宽长比。8. The shift register according to claim 7, wherein the width-to-length ratio of the fifth transistor is greater than the width-to-length ratio of the sixth transistor. 9.如权利要求8所述的移位寄存器,其特征在于,所述第五晶体管的宽长比大于所述第六晶体管的宽长比的五倍。9. The shift register according to claim 8, wherein the width-to-length ratio of the fifth transistor is greater than five times the width-to-length ratio of the sixth transistor. 10.一种平板显示装置,其特征在于,包括:像素单元和权利要求1-9任一项所述的移位寄存器,权利要求1-9任一项所述的移位寄存器适于产生所述像素单元所需的栅极信号。10. A flat panel display device, characterized in that it comprises: a pixel unit and the shift register according to any one of claims 1-9, and the shift register according to any one of claims 1-9 is suitable for generating the The gate signal required by the above pixel unit.
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