CN103236323A - Preparation method of composite transparent conductive film of metal nanowires and metallic oxides - Google Patents
Preparation method of composite transparent conductive film of metal nanowires and metallic oxides Download PDFInfo
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Abstract
本发明提供一种金属纳米线和金属氧化物复合透明导电薄膜的制备方法。其特征在于将金属纳米线溶液和金属氧化物溶液以不同比例混合制成金属纳米线和金属氧化物混合溶液，然后采用溶液加工方法在刚性或柔性平面基板上制备金属纳米线和金属氧化物复合透明导电薄膜。与单独采用金属纳米线溶液制备的金属纳米线透明导电薄膜相比，本发明的金属纳米线和金属氧化物复合透明导电薄膜具有表面平整度高、附着力和环境稳定性好等优点，有效地解决了金属纳米线透明导电薄膜的表面粗糙度、附着力及环境稳定性均较差的问题。本发明的金属纳米线和金属氧化物复合透明导电薄膜具有在薄膜太阳能电池及有机发光二极管等光电器件领域应用的潜质。
The invention provides a method for preparing a metal nanowire and metal oxide composite transparent conductive film. It is characterized in that the metal nanowire solution and the metal oxide solution are mixed in different proportions to form a metal nanowire and metal oxide mixed solution, and then a metal nanowire and metal oxide composite is prepared on a rigid or flexible flat substrate by a solution processing method. Transparent conductive film. Compared with the metal nanowire transparent conductive film prepared by using the metal nanowire solution alone, the metal nanowire and metal oxide composite transparent conductive film of the present invention has the advantages of high surface smoothness, good adhesion and environmental stability, etc., effectively The problem of poor surface roughness, adhesion and environmental stability of the metal nanowire transparent conductive film is solved. The metal nanowire and metal oxide composite transparent conductive film of the invention has the potential to be applied in the field of photoelectric devices such as thin film solar cells and organic light emitting diodes.
Description
Technical field
The present invention relates to the transparent conductive film material technical field, be specifically related to the preparation method of a kind of metal nanometer line and metal oxide compound transparent electricity conductive film.
Background technology
Transparent conductive film is a kind of important photoelectric functional film, is widely used in the photoelectric devices such as liquid crystal display, Organic Light Emitting Diode, touch-screen, thin-film solar cells.Because the development trend of photoelectric device is high-performance, low cost, flexibility and lightweight, therefore its employed transparent conductive film is also had higher requirement.At present the most frequently used and business-like transparent conductive film be indium tin oxide (ITO) film, this film has higher visible light transmissivity and lower resistivity, often is used in the photoelectric devices such as organic solar batteries and Organic Light Emitting Diode as transparency electrode.Yet traditional ito thin film can not satisfy the demand of the low-cost flexibility of following photoelectric device.This mainly is because ito thin film is more crisp, and surface resistance can sharply increase when stressed bending, and this has just influenced its application in flexible device; In addition, because phosphide element is rare, make the preparation cost of ITO increase year by year.Therefore, the no indium low cost of development and resistant to bending transparent conductive film will play useful facilitation for the development of following photoelectric device.
The novel transparent conductive film of report mainly contains conducting polymer, carbon nano-tube, Graphene, metal nanometer line etc. at present, wherein the metal nanometer line transparent conductive film has higher transmittance and lower surface resistance, at present best metal nanometer line transparent conductive film can obtain surface resistance (the Nano Res.2010 of 20 Ω/ in the transmitance of realization 89%, 3,564).Yet the metal nanometer line transparent conductive film exists also that surface roughness is big, adhesive force is low and significant disadvantages such as environmental stability difference, has seriously limited its application in photoelectric device.Not only be difficult to processing and preparing with its photoelectric device as electrode, and the photoelectric properties of device and bad stability.Therefore develop that surface topography is good, adhesive force and the high novel metal nano wire transparent conductive film of stability have important use and be worth, with the performance of obviously improving based on the photoelectric device of metal nano line electrode, and promote this class transparent conductive film in application and the industrialized development thereof of other field.
Summary of the invention
In order to solve technical problem of the prior art, the invention provides the preparation method of a kind of metal nanometer line and metal oxide compound transparent electricity conductive film.
Technical scheme of the present invention is specific as follows:
The preparation method of a kind of metal nanometer line and metal oxide compound transparent electricity conductive film may further comprise the steps:
Metal nanometer line solution and metal oxide solution are mixed, make metal nanometer line and metal oxide mixed solution;
Adopt the solution processing method at rigidity or flexible flat substrate preparation metal nanometer line and metal oxide compound transparent electricity conductive film.
In the technique scheme, the thickness of described metal nanometer line and metal oxide compound transparent electricity conductive film is 30-500nm.
In the technique scheme, described metal oxide materials is titanium oxide (TiOx), zinc oxide (ZnO), vanadic oxide (V
2O
5), tungstic acid (WO
3) or molybdenum trioxide (MoO
3) in any one.
In the technique scheme, the solvent in described metal nanometer line solution and the metal oxide solution is ethanol or isopropyl alcohol.
In the technique scheme, described metal oxide solution concentration is 1-30mg/ml.
In the technique scheme, nano wire (NW) dispersion liquid that described metal nanometer line solution is Ag, Au or Cu metal material, its concentration is 0.1-5mg/ml; The diameter of described metal nanometer line is 30-200nm, and length is 5-30 μ m.
In the technique scheme, described rigid plane substrate is glass, quartz or semiconductor; Described flexible flat substrate is plastics.
In the technique scheme, described solution processing method is spin coating, drip be coated with, blade coating or printing solutions processing method.
In the technique scheme, the volume mixture ratio of described metal nanometer line solution and metal oxide solution is 1:100-50:1.
Metal nanometer line of the present invention and metal oxide compound transparent electricity conductive film have following beneficial effect:
Metal nanometer line of the present invention and metal oxide compound transparent electricity conductive film are that metal nanometer line and metal oxide mixed solution are prepared a kind of novel transparent conductive film with satisfactory electrical conductivity and visible light transmissivity that obtains by the solution processing method on planar substrates.Compare with the metal nanometer line transparent conductive film of independent employing metal nanometer line formulations prepared from solutions, metal nanometer line of the present invention and metal oxide compound transparent electricity conductive film have advantages such as surface smoothness height, adhesive force and environmental stability are good, and surface roughness, adhesive force and the environmental stability that has solved the metal nanometer line transparent conductive film effectively be relatively poor problem all.Metal nanometer line of the present invention and metal oxide compound transparent electricity conductive film have the potential quality of using in photoelectric device fields such as thin-film solar cells and Organic Light Emitting Diodes.
Description of drawings
Fig. 1 is the structural representation of metal nanometer line and metal oxide compound transparent electricity conductive film.
Fig. 2 is embodiment 1,2,3,4 and the transmitance spectrogram of Comparative Examples I.Wherein to be respectively concentration be the TiOx of 2mg/ml (curve 1), 4mg/ml (curve 2), 8mg/ml (curve 3), 15mg/ml (curve 4) and AgNW that concentration is 0.2mg/ml to embodiment 1,2,3,4 mixes metal nanometer line and the metal oxide compound transparent electricity conductive film of back preparation with the 1:1 volume ratio, and the Comparative Examples I is individual layer AgNW transparent conductive film (50nm) (curve 5).
Fig. 3 be embodiment 1,2,3,4 and the visible light of Comparative Examples I (mean transmissivity (curve 1) of 350nm～750nm), surface resistance (curve 2) and all square roughness (curve 3) with the change curve of TiOx concentration.Specifically respectively when TiOx concentration is 0mg/ml (Comparative Examples I), 2mg/ml (embodiment 1), 4mg/ml (embodiment 2), 8mg/ml (embodiment 3) and 15mg/ml (embodiment 4), the mean transmissivity of the transparent conductive film that records, surface resistance and equal square roughness.
Fig. 4 is embodiment 2(curve 1) and Comparative Examples I (curve 2) in air, place surface resistance change curve behind the different time.
Fig. 5 is the current-voltage characteristic curve of embodiment 9 and Comparative Examples II, is the polymer solar battery (embodiment 9) of negative electrode with embodiment 2 respectively specifically and is the current-voltage characteristic curve of the polymer solar battery (Comparative Examples II) of negative electrode with the Comparative Examples I.The structure of the polymer solar battery for preparing at planar substrates is negative electrode/active layer/anode, and wherein active layer is the mixture P3HT:PCBM film of poly-(3-hexyl) thiophene (P3HT) and [6,6]-phenyl-C61-methyl butyrate (PCBM), and anode is MoO
3/ Al film.The device architecture of embodiment 9 is TiOx:AgNW(100nm)/P3HT:PCBM (mass ratio is 1:1,220nm)/and MoO
3(10nm)/Al (100nm) (curve 1), the device architecture of Comparative Examples II is AgNW(50nm)/P3HT:PCBM (mass ratio is 1:1,220nm)/and MoO
3(10nm)/Al (100nm) (curve 2).
Embodiment
Invention thought of the present invention is: a kind of metal nanometer line and metal oxide compound transparent electricity conductive film preparation methods are provided, the structure of the transparent conductive film that it is related as shown in Figure 1:
The preparation method of above-mentioned composite bed 200 is spin coating, drip be coated with, solution processing methods such as blade coating, printing.
Specifically, the preparation method of metal nanometer line of the present invention and metal oxide compound transparent electricity conductive film:
After metal nanometer line solution and metal oxide solution mixed in varing proportions, adopting the solution processing method was the composite bed 200 of 30-500nm at planar substrates 100 preparation thickness.The volume mixture ratio of metal nanometer line solution and metal oxide solution is 1:100-50:1, and solvent is organic solvents such as ethanol, isopropyl alcohol.
Above-mentioned planar substrates 100 is rigidity or flexible materials such as glass, plastics, quartz or semiconductor.
Above-mentioned metal oxide solution concentration is 1-30mg/ml.Metal oxide materials is TiOx, ZnO, V
2O
5, WO
3Or MoO
3Deng.
Metal nanometer line solution is nano wire (NW) dispersion liquid of metal materials such as Ag, Au or Cu, and the diameter of described metal nanometer line is 30-200nm, and length is 5-30 μ m, and solution concentration is 0.1-5mg/ml.
Above-mentioned solution processing method is spin coating, drip be coated with, solution processing methods such as blade coating, printing.
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.
Below be specifying of embodiment 1 to 9 and Comparative Examples I and II:
Embodiment 1:
Be that the TiOx ethanolic solution of 2mg/ml and AgNW ethanolic solution that concentration is 0.2mg/ml mix with the 1:1 volume ratio with concentration, adopting the method for solution spin coating afterwards is metal nanometer line and the metal-oxide film of 60nm at planar substrates 100 preparation thickness, as composite bed 200.Wherein this planar substrates 100 is glass substrate; The diameter of AgNW is 50nm, and length is 15 μ m.
Embodiment 2:
Be that the TiOx ethanolic solution of 4mg/ml and AgNW ethanolic solution that concentration is 0.2mg/ml mix with the 1:1 volume ratio with concentration, adopting the solution spin coating method afterwards is metal nanometer line and the metal-oxide film of 100nm at planar substrates 100 preparation thickness, as composite bed 200.Wherein this planar substrates 100 is glass substrate; The diameter of AgNW is 50 nm, and length is 15 μ m.
Embodiment 3:
Be that the TiOx ethanolic solution of 8 mg/ml and AgNW ethanolic solution that concentration is 0.2 mg/ml mix with the 1:1 volume ratio with concentration, adopting the solution spin coating method afterwards is metal nanometer line and the metal-oxide film of 150 nm at planar substrates 100 preparation thickness, as composite bed 200.Wherein this planar substrates 100 is glass substrate; The diameter of AgNW is 50 nm, and length is 15 μ m.
Embodiment 4:
Be that the TiOx ethanolic solution of 15 mg/ml and AgNW ethanolic solution that concentration is 0.2 mg/ml mix with the 1:1 volume ratio with concentration, adopting the solution spin coating method afterwards is metal nanometer line and the metal-oxide film of 220nm at planar substrates 100 preparation thickness, as composite bed 200.Wherein this planar substrates 100 is glass substrate; The diameter of AgNW is 50 nm, and length is 15 μ m.
The Comparative Examples I:
Adopting the solution spin coating method is the AgNW film of 50 nm at glass substrate preparation thickness.Wherein the diameter of AgNW is 50 nm, and length is 15 μ m.The concentration of AgNW ethanolic solution is 0.2 mg/ml.
Embodiment 5:
Be that the ZnO ethanolic solution of 30 mg/ml and AgNW ethanolic solution that concentration is 0.5 mg/ml mix with the 1:2 volume ratio with concentration, adopting a coating method afterwards is metal nanometer line and the metal-oxide film of 500 nm at planar substrates 100 preparation thickness, as composite bed 200.Wherein this planar substrates 100 is quartz base plate; The diameter of AgNW is 200 nm, and length is 30 μ m.
Embodiment 6:
Be the V of 1 mg/ml with concentration
2O
5Aqueous isopropanol and concentration are that the AgNW aqueous isopropanol of 0.1 mg/ml mixes with the 5:1 volume ratio, and adopting the method for solution spin coating afterwards is metal nanometer line and the metal-oxide film of 30nm at planar substrates 100 preparation thickness, as composite bed 200.Wherein this planar substrates 100 is plastic base; The diameter of AgNW is 30nm, and length is 5 μ m.
Embodiment 7:
Be the WO of 10mg/ml with concentration
3Aqueous isopropanol and concentration are that the AuNW aqueous isopropanol of 5mg/ml mixes with the 50:1 volume ratio, and adopting afterwards and scraping coating method is metal nanometer line and the metal-oxide film of 200nm at planar substrates 100 preparation thickness, as composite bed 200.Wherein this planar substrates 100 is glass substrate; The diameter of AuNW is 70nm, and length is 10 μ m.
Embodiment 8:
Be the MoO of 10mg/ml with concentration
3Aqueous isopropanol and concentration are that the CuNW aqueous isopropanol of 5mg/ml mixes with the 1:100 volume ratio, and adopting printing process afterwards is metal nanometer line and the metal-oxide film of 250nm at planar substrates 100 preparation thickness, as composite bed 200.Wherein this planar substrates 100 is silicon semiconductor substrate; The diameter of CuNW is 30nm, and length is 15 μ m.
Embodiment 9:
Be that to prepare structure be TiOx:AgNW(100nm to negative electrode with embodiment 2)/P3HT:PCBM (mass ratio is 1:1,220nm)/and MoO
3(10nm)/polymer solar battery of Al (100nm).Wherein P3HT and PCBM blend adopt the chlorobenzene dissolving, and utilize its solution spin-coating film, utilize hot platform that the planar glass substrate that scribbles the P3HT:PCBM film is carried out 10 minutes annealing in process of 160 degree then, at last aforesaid substrate is put into thermal evaporation apparatus, when vacuum degree reaches 4.0 * 10
-4During Pascal, on the P3HT:PCBM film, evaporate MoO successively
3With the Al film as anode.
The Comparative Examples II:
Be that to prepare structure be AgNW(50nm to negative electrode with the Comparative Examples I)/P3HT:PCBM (mass ratio is 1:1,220nm)/and MoO
3(10nm)/polymer solar battery of Al (100nm).P3HT:PCBM, MoO
3Identical with embodiment 9 with the preparation process of Al film.
The performance parameter contrast of table 1 transparent conductive film
Table 1 has provided embodiment 1,2,3,4,5,6,7,8 and the visible light mean transmissivity of Comparative Examples I, surface resistance and equal square roughness parameters.As can be seen from Table 1, adopt metal nanometer line and metal oxide compound transparent electricity conductive film can obviously reduce roughness of film, and can realize higher visible light transmissivity and lower surface resistance.
In above-described embodiment of the preparation method of metal nanometer line of the present invention and metal oxide compound transparent electricity conductive film:
As can be seen from Figure 2 adopt metal nanometer line and metal oxide compound transparent electricity conductive film ( embodiment 1,2,3,4) can realize the high permeability of visible region, maximum mean transmissivity reaches 86.2%, and is suitable with single-layer metal nano wire (Comparative Examples I) transparent conductive film transmitance.
As can be seen from Figure 3, along with the increase of metal oxide TiOx concentration, the transmitance of metal nanometer line and metal oxide compound transparent electricity conductive film and all square roughness reduce gradually, and its surface resistance raises to some extent.When metal oxide TiOx concentration is 0mg/ml (Comparative Examples I), because AgNW is inierpeneirating network structure, so film has higher all square roughness (30nm).When metal oxide TiOx concentration raises formation metal nanometer line and metal oxide compound transparent electricity conductive film (embodiment 1,2,3,4) gradually, all square roughness of film are reduced to below the 5nm, and along with the rising of TiOx concentration reduces gradually, the minimum 1.9nm that is down to.This mainly is because TiOx has filled the slit between the AgNW, makes film become more smooth thus.In this simultaneously, the rising of TiOx concentration, the surface resistance of metal nanometer line and metal oxide compound transparent electricity conductive film has been increased to 40 Ω/ from 22 Ω/.Although the introducing of TiOx makes the surface resistance of conductive film increase to some extent, as the electrode of photoelectric device, the surface resistance of Zeng Jiaing is more much smaller to the influence of device performance than high roughness to the influence of device performance slightly.Therefore, compare with single-layer metal nano wire transparent conductive film electrode, metal nanometer line and metal oxide compound transparent electricity conductive film more are conducive to improve the performance of photoelectric device as electrode.
Embodiment 2 places after 100 hours in air as can be seen from Figure 4, its surface resistance has been increased to 60 Ω/ from the 24 Ω/ of beginning, and after the Comparative Examples I placed 100 hours under the same conditions, its surface resistance then had been increased to 550 Ω/ from the 20 Ω/ of beginning.The result shows that metal nanometer line and metal oxide compound transparent electricity conductive film have better environmental stability than individual layer AgNW film.This mainly is because metal oxide materials (for example TiOx film) stable performance in air; its protectiveness covers to act on and has completely cut off contacting of metal nanometer line (for example AgNW film) and air to a certain extent, thereby has improved the environmental stability of transparent conductive film.In addition, by tape paste method the adhesive force in embodiment 2 and the Comparative Examples I is tested, after adhesive tape taken off from film surface, the AgNW film overwhelming majority in the Comparative Examples I comes off and sticks on the adhesive tape, remaining film no longer conducts electricity, show individual layer AgNW adhesion of thin film extreme difference, practicality is very low.And the film of embodiment 2 can not come off in the same test, and surface resistance only has been increased to 28 Ω/ from 24 Ω/, shows that metal nanometer line and metal oxide compound transparent electricity conductive film have good adhesive.
Fig. 5 is the current-voltage characteristic curve of embodiment 9 and Comparative Examples II.The open circuit voltage of Comparative Examples II and embodiment 9, short-circuit current density, fill factor, curve factor and energy conversion efficiency are respectively 0.38 and 0.60 volt, and 7.81 and 8.9 milliamperes/square centimeter, 0.43 and 0.59,1.28% and 3.16%.The result shows, be that the performance of polymer solar battery of negative electrode is apparently higher than being the polymer solar battery of negative electrode with individual layer AgNW film with metal nanometer line and metal oxide compound transparent electricity conductive film, this is because metal nanometer line and metal oxide compound transparent electricity conductive film have higher adhesive force, lower surface roughness and good optics and electrology characteristic, outstanding combination property makes its interface resistance as the electrode of device and active layer little, the interface contact performance is better, makes the performance of polymer solar battery obviously improve.
Obviously, above-described embodiment only is for this patent example clearly is described, and is not the restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here need not also can't give all execution modes exhaustive.And the apparent variation of being extended out thus or change still are among the protection range of the invention.
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Cited By (10)
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|---|---|---|---|---|
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582303A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Transparent conductive film with novel structure and preparation method thereof |
| CN102087886A (en) * | 2009-12-08 | 2011-06-08 | 中国科学院福建物质结构研究所 | Silver nanowire-based transparent conductive thin film and preparation method thereof |
| WO2012015254A2 (en) * | 2010-07-30 | 2012-02-02 | 주식회사 잉크테크 | Production method for a transparent conductive film and a transparent conductive film produced thereby |
| CN102527621A (en) * | 2011-12-27 | 2012-07-04 | 浙江科创新材料科技有限公司 | Preparation method for haze-adjustable flexible transparent conductive film |
-
2013
- 2013-04-18 CN CN2013101349867A patent/CN103236323A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582303A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Transparent conductive film with novel structure and preparation method thereof |
| CN102087886A (en) * | 2009-12-08 | 2011-06-08 | 中国科学院福建物质结构研究所 | Silver nanowire-based transparent conductive thin film and preparation method thereof |
| WO2012015254A2 (en) * | 2010-07-30 | 2012-02-02 | 주식회사 잉크테크 | Production method for a transparent conductive film and a transparent conductive film produced thereby |
| CN102527621A (en) * | 2011-12-27 | 2012-07-04 | 浙江科创新材料科技有限公司 | Preparation method for haze-adjustable flexible transparent conductive film |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105320333A (en) * | 2014-07-29 | 2016-02-10 | 南京瀚宇彩欣科技有限责任公司 | Organic electroluminescence anti-interference touch panel |
| CN104134484A (en) * | 2014-07-31 | 2014-11-05 | 中国电子科技集团公司第五十五研究所 | Flexible transparent conductive film based on silver nanowires and preparation method |
| CN104134484B (en) * | 2014-07-31 | 2017-09-19 | 中国电子科技集团公司第五十五研究所 | Flexible transparent conductive film based on nano-silver wire and preparation method thereof |
| CN105895196A (en) * | 2016-04-07 | 2016-08-24 | 江苏三月光电科技有限公司 | Novel transparent conductive thin film and preparation method thereof |
| CN109407872A (en) * | 2017-08-17 | 2019-03-01 | 上海和辉光电有限公司 | A kind of flexibility touch sensing and preparation method thereof, display panel, display device |
| CN109705661A (en) * | 2017-10-25 | 2019-05-03 | Tcl集团股份有限公司 | A kind of compound ink and preparation method thereof, device |
| CN108385072A (en) * | 2018-01-18 | 2018-08-10 | 中国科学院宁波材料技术与工程研究所 | A kind of transparent conductive film and its preparation method and application with single layer structure |
| CN108807628A (en) * | 2018-05-03 | 2018-11-13 | 五邑大学 | Al based on crystal Ag nano wire grids is ZnO thin film doped and preparation method thereof |
| CN108807628B (en) * | 2018-05-03 | 2020-07-14 | 五邑大学 | Al-doped ZnO film based on crystal Ag nanowire grid and preparation method thereof |
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Application publication date: 20130807 |