CN103036139A - Narrow-linewidth tunable semiconductor longitudinal single-ended pump rubidium steam laser optical path system - Google Patents
Narrow-linewidth tunable semiconductor longitudinal single-ended pump rubidium steam laser optical path system Download PDFInfo
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- CN103036139A CN103036139A CN2012105474698A CN201210547469A CN103036139A CN 103036139 A CN103036139 A CN 103036139A CN 2012105474698 A CN2012105474698 A CN 2012105474698A CN 201210547469 A CN201210547469 A CN 201210547469A CN 103036139 A CN103036139 A CN 103036139A
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- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 229910052701 rubidium Inorganic materials 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 230000003287 optical effect Effects 0.000 title claims abstract description 9
- 230000008878 coupling Effects 0.000 claims abstract description 21
- 238000010168 coupling process Methods 0.000 claims abstract description 21
- 238000005859 coupling reaction Methods 0.000 claims abstract description 21
- 230000003321 amplification Effects 0.000 claims abstract description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 13
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- 238000005086 pumping Methods 0.000 claims description 23
- 230000010287 polarization Effects 0.000 claims description 18
- 230000001105 regulatory effect Effects 0.000 claims description 12
- 230000005283 ground state Effects 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 6
- 230000002745 absorbent Effects 0.000 claims description 5
- 239000002250 absorbent Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
- 230000033228 biological regulation Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 208000014674 injury Diseases 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000960 laser cooling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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Abstract
本发明公开了一种窄线宽可调谐半导体纵向单端泵浦铷蒸气激光光路系统。由可调谐半导体激光功率放大系统、光束耦合系统和谐振腔系统组成。使用窄线宽可调谐的泵浦光源，将其波长调至铷蒸气吸收线的中心波长，使铷蒸气对泵浦光的单程吸收高达97%。在铷池内充入600Torr的乙烷气体，增加铷原子从泵浦上能级到激光上能级的弛豫速率，保障铷蒸气激光产生的条件。通过在凹面全反镜与控温箱间加入1/4波片，将凹面全反镜与平面输出耦合镜调至同轴，构成稳定的平凹谐振腔。使用可控的温度控制方法，使铷蒸气池窗口的温度高于其中间5度，避免了铷蒸气在窗口的沉积，在保持最小功率损耗的同时延长了铷池的使用寿命，保证了激光的稳定输出。
The invention discloses a narrow line width tunable semiconductor longitudinal single-end pumped rubidium vapor laser optical path system. It consists of a tunable semiconductor laser power amplification system, a beam coupling system and a resonant cavity system. Using a narrow linewidth tunable pump light source, its wavelength is adjusted to the central wavelength of the rubidium vapor absorption line, so that the one-way absorption of rubidium vapor to the pump light is as high as 97%. Fill the rubidium pool with 600Torr ethane gas to increase the relaxation rate of rubidium atoms from the upper energy level of the pump to the upper energy level of the laser, ensuring the conditions for the generation of rubidium vapor laser. By adding a 1/4 wave plate between the concave total reflection mirror and the temperature control box, the concave total reflection mirror and the planar output coupling mirror are adjusted to be coaxial to form a stable plano-concave resonant cavity. Using a controllable temperature control method, the temperature of the rubidium vapor cell window is 5 degrees higher than the middle, avoiding the deposition of rubidium vapor on the window, prolonging the service life of the rubidium cell while maintaining the minimum power loss, and ensuring the laser. stable output.
Description
Technical field
The present invention relates to a kind of rubidium vapor laser light path system, especially relate to the vertical single-ended pumping rubidium vapor laser light path system of a kind of narrow line width regulatable semiconductor.
Background technology
Semiconductor laser pumping alkali metal vapour laser DPALs (diode-pumped alkali vopor lasers) is the new pattern laser device with high-efficiency high power near-infrared laser output of high light beam quality, these near-infrared lasers have wide practical use at aspects such as laser cooling, oriented energy transmission, material processed, cause in the last few years researcher's very big interest and further investigation, and obtained major progress.In order to obtain the rubidium vapor laser output of stability and high efficiency, except needs reach pumping threshold power and threshold temperature, also need to meet the following conditions: the one, the pump light that have wavelength and rubidium atom D2 Absorption Line centre wavelength to coincide, with the rubidium atom from the ground state pumping to Absorption Line on energy level, and the output wavelength that needs pumping source without drift without mode hopping; The 2nd, need and will be relaxed towards fast upper laser level by pumping rubidium atom of energy level to the Absorption Line, with the spontaneous radiation of energy level on the decrease uptake line to ground state, when atom after upper laser level gathers to a certain degree, between upper laser level and ground state, form population inversion, produce stimulated radiation, and then produce the rubidium vapor laser; The 3rd, the resonant cavity of the laser generation of providing be arranged, if use stable cavity, then the chamber mirror must keep good coaxial, and requires the chamber mould and the pump beam that is coupled in the rubidium pond has good pattern matching; The 4th, the temperature control of accurate rubidium steam pond is arranged, temperature control has two emphasis, and first temperature can not surpass 130 ℃, prevents that the chemical reaction of rubidium atom and buffer gas from producing, it two is that steam pond window temperature is higher 5 ℃ than its middle temperature, avoids the rubidium steam in the deposition of window.The satisfied of these conditions is the technical barrier of restriction semiconductor pumped rubidium vapor laser bright dipping and stable output.
Summary of the invention
For solving the problem that exists in the background technology, the object of the present invention is to provide the vertical single-ended pumping rubidium vapor laser light path system of a kind of narrow line width regulatable semiconductor, this system uses the pump light source of narrow line width regulatable, with the wavelength precision regulating of the seed laser absorbent core wavelength 780.24nm to the rubidium atom, the lock current module of trying one's best when harmonic is long is convenient to the stable output of pump light like this; In the rubidium pond, be filled with the ethane gas of 600Torr, increase the relaxation rate of rubidium atom from energy level in the pumping to upper laser level; By between concave mirror and temperature-controlled box, adding quarter wave plate, concave mirror and plane output coupling mirror precision regulating is extremely coaxial, consist of stable plano-concave resonant cavities; Use controlled temperature-controlled process, make the temperature of rubidium steam pond window be higher than its middle 5 degree, avoided the deposition of rubidium steam at window.
The technical solution adopted for the present invention to solve the technical problems is:
The seed laser that ECL801 type narrow linewidth semiconductor laser sends is successively through the first isolator, the first plane total reflective mirror, the first half-wave plate, behind the second plane total reflective mirror by TAL100 type semiconductor laser amplifier amplify be incident to the second isolator after, again through the second half-wave plate, condenser lens, the rubidium steam pond of polarizing beam splitter mirror to the temperature control box, be excited to energy level in the pumping behind the ground state rubidium Atomic absorption pump light in the rubidium steam pond, again with rubidium steam pond in ethane collision be transferred to upper laser level, produce the rubidium vapor laser, after the rubidium vapor laser of unabsorbed pump light and generation transfers to concave mirror, the light that is reflected onto polarizing beam splitter mirror through rubidium steam pond is divided into two-way, one the tunnel is the pump light of the horizontal polarization that is reflected, see through successively line focus lens of polarizing beam splitter mirror, the second half-wave plate transfers to the second isolator place and is isolated, another road is the rubidium vapor laser of the vertical polarization that is reflected, through polarizing beam splitter mirror after to be reflected onto reflectivity be 22% plane output coupling mirror to power meter surveying rubidium vapor laser power, or place fiber spectrometer to survey rubidium vapor laser spectrum; At the center of each optical element on the same straight line on same optical axis.
Described ECL801 type Littrow structure external-cavity semiconductor laser output wavelength is tunable, live width is less than the seed laser of 1MHz, by regulating the Piezoelectric Ceramic module in the semiconductor laser power supply, the wavelength of seed laser is transferred to the absorbent core wavelength 780.24nm of rubidium atom, and the polarization state of outgoing seed laser is horizontal polarization; The laggard TAL100 type of the horizontal outgoing of seed laser semiconductor laser amplifier carries out power amplification, by regulating the operating current regulation output pumping light power of laser amplifier.
Described the first plane total reflective mirror is vertical with the second plane total reflective mirror, and the angle of adjusting the first isolator and the second isolator makes isolation〉60 dB; The focal length of condenser lens is 15cm.
Described rubidium steam pond places in the temperature control box, and center, rubidium steam pond places the focus place of condenser lens.
Be filled with the ethane gas of 600Torr in the described rubidium steam pond; Concave mirror and plane output coupling mirror consist of " L " type plano-concave resonant cavities, and the length of plano-concave resonant cavities " L " is less than the focal length 50cm of concave mirror.
The beneficial effect that the present invention has is:
The present invention uses the pump light source of narrow line width regulatable, and its wavelength is transferred to the centre wavelength of rubidium steam Absorption Line, and the rubidium steam is absorbed up to 97% the one way of pump light.In the rubidium pond, be filled with the ethane gas of 600Torr, increase the relaxation rate of rubidium atom from energy level in the pumping to upper laser level, ensured the condition that the rubidium vapor laser produces.By between concave mirror and temperature-controlled box, adding quarter wave plate, concave mirror and plane output coupling mirror precision regulating is extremely coaxial, consist of stable plano-concave resonant cavities.Use controlled temperature-controlled process, make the temperature of rubidium steam pond window be higher than its middle 5 degree, avoided the deposition of rubidium steam at window, when keeping the minimum power loss, prolonged the useful life in rubidium pond, guaranteed the stable output of laser.
Description of drawings
Accompanying drawing is index path of the present invention.
Among the figure: 1, ECL801 type semiconductor laser, the 2, first isolator, the 3, first plane total reflective mirror, 4, the first half-wave plate, the 5, second plane total reflective mirror, 6, TAL100 type semiconductor laser amplifier, 7, the second isolator, the 8, second half-wave plate, 9, condenser lens, 10, polarizing beam splitter mirror, 11, temperature control box, 12, rubidium steam pond, 13, concave mirror, 14, reflectivity is 22% plane output coupling mirror, 15, power meter.
Embodiment
Below in conjunction with accompanying drawing embodiments of the present invention are described further.
As shown in drawings, the seed laser that ECL801 type narrow linewidth semiconductor laser 1 sends is successively through the first isolator 2, the first plane total reflective mirror 3, the first half-wave plate 4, after the second plane total reflective mirror 5 is incident to the second isolator 7 by 6 amplifications of TAL100 type semiconductor laser amplifier afterwards, again through the second half-wave plate 8, condenser lens 9, the rubidium steam pond 12 of polarizing beam splitter mirror 10 to the temperature control box 11, be excited to energy level in the pumping behind the ground state rubidium Atomic absorption pump light in the rubidium steam pond 12, again with rubidium steam pond 12 in ethane collision be transferred to upper laser level, produce the rubidium vapor laser, after the rubidium vapor laser of unabsorbed pump light and generation transfers to concave mirror 13, the light that is reflected onto polarizing beam splitter mirror 10 through rubidium steam pond 12 is divided into two-way, one the tunnel is the pump light of the horizontal polarization that is reflected, see through successively line focus lens 9 of polarizing beam splitter mirror 10, the second half-wave plate 8 transfers to the second isolator 7 places and is isolated, another road is the rubidium vapor laser of the vertical polarization that is reflected, through polarizing beam splitter mirror 10 after to be reflected onto reflectivity be 22% plane output coupling mirror 14 to power meter 15 surveying rubidium vapor laser power, or place fiber spectrometer to survey rubidium vapor laser spectrum; At the center of each optical element on the same straight line on same optical axis.
ECL801 type Littrow structure external-cavity semiconductor laser 1 output wavelength is tunable, live width is less than the seed laser of 1MHz, by regulating the Piezoelectric Ceramic module in the semiconductor laser power supply, the wavelength of seed laser is transferred to the absorbent core wavelength 780.24nm of rubidium atom, and the polarization state of outgoing seed laser is horizontal polarization; The laggard TAL100 type of the horizontal outgoing of seed laser semiconductor laser amplifier 6 carries out power amplification, by regulating the operating current regulation output pumping light power of laser amplifier.
The first plane total reflective mirror (3) is vertical with the second plane total reflective mirror 5, and the angle of adjusting the first isolator 2 and the second isolator 7 makes isolation〉60 dB; The focal length of condenser lens 9 is 15cm.
Be filled with the ethane gas of 600Torr in the rubidium steam pond 12; Concave mirror 13 consists of " L " type plano-concave resonant cavities with plane output coupling mirror 14, and the length of plano-concave resonant cavities " L " is less than the focal length 50cm of concave mirror 13.
The light path system of the vertical single-ended pumping rubidium vapor laser of narrow line width regulatable semiconductor disclosed by the invention comprises tunable semiconductor power amplification laser system, light beam coupling system, resonance cavity system, wherein:
1) tunable semiconductor power amplification laser system: comprise ECL801 type semiconductor laser 1, TAL100 type semiconductor laser amplifier 6.ECL801 type Littrow structure external-cavity semiconductor laser 1 output wavelength is tunable, live width is less than the seed laser of 1MHz; The horizontal outgoing of seed laser is advanced TAL100 type semiconductor laser amplifier 6 by the light beam coupling system, coupled and is carried out power amplification, by regulating the operating current regulation output laser power of laser amplifier.
2) light beam coupling system: comprise the first isolator 2, the first plane total reflective mirrors 3, the first half-wave plates 4, the second plane total reflective mirrors 5, the second isolators 7, the second half-wave plates 8, condenser lens 9.The focal length of the condenser lens 9 of choice for use is 15cm.Angle with isolator before the experiment transfers to the best, makes isolation〉60 dB.
3) resonance cavity system: comprise polarizing beam splitter mirror 10, temperature control box 11, rubidium steam pond 12, concave mirror 13, reflectivity are 22% plane output coupling mirror 14.Rubidium steam pond 12 places in the temperature control box 11, and the center in rubidium steam pond 12 places the focus place of condenser lens 9.Concave mirror 13 places temperature control box 11 right-hand members nearby so that good pattern matching to be provided.
The tunable semiconductor power amplification laser system: ECL801 type Littrow structure external-cavity semiconductor laser is utilized the dispersion selection effect of grating, so that the very narrow a part of emission spectra of laser gain medium frequency feeds back in the laser tube, increased the competitiveness of shoot laser pattern, so that easier single longitudinal mode and the narrow linewidth state of being operated in of laser.Wave-length coverage is 780 ~ 785nm, Output of laser live width＜1MHz, and the tuning without mode skip scope is 12GHz, quality for outputting laser beam M
2＜1.5, side mode suppression ratio is 40 ~ 50dB, and working temperature is at 20 ~ 30 ℃.Laser head be fixed on heat radiation good heat sink on, by regulating the PZT(piezoelectric ceramic in the semiconductor laser power supply) driver module, the wavelength of seed laser can be transferred to the absorbent core wavelength 780.24nm of rubidium atom, try one's best the lock current module when harmonic is long and only transfer the PZT module, be convenient to so the stable output of pump light.The polarization state of outgoing seed laser is horizontal polarization.TAL100 type tunable semiconductor laser amplifier is the stimulated radiation amplification principle that utilizes semi-conducting material, realize the device that coherent light amplifies, mainly consisted of by semiconductor laser amplifier chip and driving power, can the power of the semiconductor laser of a plurality of wavelength be amplified, the one way maximum amplification is about 67.Output of laser live width＜1MHz, the tuning without mode skip scope is 12GHz, quality for outputting laser beam M
2＜1.5, side mode suppression ratio is 40 ~ 50dB, and working temperature is at 21 ~ 25 ℃.Laser head be fixed on heat radiation good heat sink on.
The light beam coupling system: comprise seed laser is coupled into the first isolator 2, the first plane total reflective mirror 3, the first half-wave plate 4, the second plane total reflective mirror 5 of semiconductor laser amplifier and will amplify after pump light be coupled into the second isolator 7, the second half-wave plate 8, the condenser lens 9 in steam pond.For the pump light that prevents from reflecting to the laser injury, before seed laser and amplifier, place respectively the isolator isolation reverberation of a 60dB.For the drift that prevents machinery makes the injection deleterious, so that the amplification efficiency reduction, can regularly be optimized adjusting to the first plane total reflective mirror, the second plane total reflective mirror and the first half-wave plate, to keep maximum coupling efficiency.Regulating the second half-wave plate makes the pump light transmitance the highest.Pump light line focus lens focus is with the power density of raising pump light, and then raising rubidium steam is to the absorption efficiency of pump light.
Resonance cavity system: polarizing beam splitter mirror reflection vertical polarization s component, but allow parallel polarization p component to pass through, thus separate s and p polarized light component, for transmitted light beam, having the highest polarization extinction ratio is T
P: T
S1000:1, as a comparison, the extinction ratio of folded light beam is 100:1, wavelength is that the polarization direction of the rubidium laser of the pump light of 780.24nm and 795nm is quadrature, so polarizing beam splitter mirror can be with both beam splitting; Temperature-controlled box makes the temperature at two ends, steam pond than high 5 degree of middle temperature, to avoid steam in the deposition of steam pond window, the window pollution that brings for the chemical reaction of avoiding buffer gas ethane and rubidium atom and the loss of rubidium and ethane, the heating maximum temperature is no more than 130 ℃; The steam pond is the cylinder of 2.5cm * 2.5cm, and window is coated with the anti-anti-film of 780.24nm, and the ethane gas that is filled with 600Torr in the pond is to accelerate in the pumping energy level to the relaxation rate of upper laser level; The concave mirror focal length is 50cm, and the reflectivity of plane output coupling mirror is 22%, and both form " L " type plano-concave resonant cavities; Whether two chamber mirrors are coaxial most important, only have coaxial, just might shoot laser, transfer when coaxial, between concave mirror and temperature-controlled box, add quarter wave plate, 780.24nm pump light for the first time through being changed into elliptically polarized light behind the quarter wave plate, the second time is through quarter wave plate after the arrival concave mirror is reflected, because the optical axis of the quarter wave plate of selecting and the main shaft of elliptically polarized light and not parallel, so for the second time through behind the quarter wave plate, the pump light that is reflected by concave mirror still is elliptically polarized light, then the vertical component at polarizing beam splitter mirror place elliptically polarized light can be reflected onto the plane output coupling mirror, the pump light that is reflected by the plane output coupling mirror still can be reflected onto the steam pond after arriving polarizing beam splitter mirror, and have 3 hot spots this moment between polarizing beam splitter mirror and temperature-controlled box, be respectively launching spot, the flare of the flare of concave mirror and plane output coupling mirror, this 3 spot is transferred to inregister, and then two chamber mirrors are coaxial, and all coaxial with incident light; The length of plano-concave resonant cavities " L " is less than the focal length of concave mirror.
Claims (5)
1. vertical single-ended pumping rubidium vapor laser light path system of narrow line width regulatable semiconductor, it is characterized in that: the seed laser that ECL801 type narrow linewidth semiconductor laser (1) sends is successively through the first isolator (2), the first plane total reflective mirror (3), the first half-wave plate (4), after the second plane total reflective mirror (5) is incident to the second isolator (7) by TAL100 type semiconductor laser amplifier (6) amplification afterwards, again through the second half-wave plate (8), condenser lens (9), the rubidium steam pond (12) of polarizing beam splitter mirror (10) to the temperature control box (11), be excited to energy level in the pumping behind the ground state rubidium Atomic absorption pump light in the rubidium steam pond (12), again with rubidium steam pond (12) in ethane collision be transferred to upper laser level, produce the rubidium vapor laser, after the rubidium vapor laser of unabsorbed pump light and generation transfers to concave mirror (13), the light that is reflected onto polarizing beam splitter mirror (10) through rubidium steam pond (12) is divided into two-way, one the tunnel is the pump light of the horizontal polarization that is reflected, see through successively line focus lens (9) of polarizing beam splitter mirror (10), the second half-wave plate (8) transfers to the second isolator (7) and locates to be isolated, another road is the rubidium vapor laser of the vertical polarization that is reflected, through polarizing beam splitter mirror (10) after to be reflected onto reflectivity be 22% plane output coupling mirror (14) to power meter (15) surveying rubidium vapor laser power, or place fiber spectrometer to survey rubidium vapor laser spectrum; At the center of each optical element on the same straight line on same optical axis.
2. the vertical single-ended pumping rubidium vapor laser light path system of a kind of narrow line width regulatable semiconductor according to claim 1, it is characterized in that: described ECL801 type Littrow structure external-cavity semiconductor laser (1) output wavelength is tunable, live width is less than the seed laser of 1MHz, by regulating the Piezoelectric Ceramic module in the semiconductor laser power supply, the wavelength of seed laser is transferred to the absorbent core wavelength 780.24nm of rubidium atom, and the polarization state of outgoing seed laser is horizontal polarization; The laggard TAL100 type of the horizontal outgoing of seed laser semiconductor laser amplifier (6) carries out power amplification, by regulating the operating current regulation output pumping light power of laser amplifier.
3. the vertical single-ended pumping rubidium vapor laser light path system of a kind of narrow line width regulatable semiconductor according to claim 1, it is characterized in that: described the first plane total reflective mirror (3) is vertical with the second plane total reflective mirror (5), and the angle of adjusting the first isolator (2) and the second isolator (7) makes isolation〉60 dB; The focal length of condenser lens (9) is 15cm.
4. the vertical single-ended pumping rubidium vapor laser light path system of a kind of narrow line width regulatable semiconductor according to claim 1, it is characterized in that: described rubidium steam pond (12) places in the temperature control box (11), and center, rubidium steam pond (12) places the focus place of condenser lens (9).
5. the vertical single-ended pumping rubidium vapor laser light path system of a kind of narrow line width regulatable semiconductor according to claim 1 is characterized in that: the ethane gas that is filled with 600Torr in the described rubidium steam pond (12); Concave mirror (13) consists of " L " type plano-concave resonant cavities with plane output coupling mirror (14), and the length of plano-concave resonant cavities " L " is less than the focal length 50cm of concave mirror (13).
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| CN103928824A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | A Heat Pipe Alkali Metal Vapor Laser |
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