CN103011800A - Preparation method of zinc oxide resistor - Google Patents
Preparation method of zinc oxide resistor Download PDFInfo
- Publication number
- CN103011800A CN103011800A CN2012105777436A CN201210577743A CN103011800A CN 103011800 A CN103011800 A CN 103011800A CN 2012105777436 A CN2012105777436 A CN 2012105777436A CN 201210577743 A CN201210577743 A CN 201210577743A CN 103011800 A CN103011800 A CN 103011800A
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- CN
- China
- Prior art keywords
- oxide
- zinc oxide
- suspension
- bismuth
- barium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000725 suspension Substances 0.000 claims abstract description 20
- 239000000843 powder Substances 0.000 claims abstract description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 239000011651 chromium Substances 0.000 claims abstract description 6
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 6
- 239000010941 cobalt Substances 0.000 claims abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 8
- 239000007891 compressed tablet Substances 0.000 claims description 6
- 239000004615 ingredient Substances 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000002156 mixing Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 229960001296 zinc oxide Drugs 0.000 description 9
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention provides a preparation method of a zinc oxide resistor. The materials of the zinc oxide resistor comprise zinc oxide as a main material, and one or more than one of oxides of cobalt, manganese, chromium, nickel, barium, bismuth, antimony, aluminum, silicon, gallium, titanium and the like as a dopant; and a doping ratio is 5-10 wt%. The preparation method is characterized by comprising the following steps of: at first, preparing the zinc oxide powder to be suspension liquid, and mixing the suspension liquid with the one or more than one dopant of the oxides of the cobalt, the manganese, the chromium, the nickel, the barium, the bismuth, the antimony, the aluminum, the silicon, the gallium, the titanium and the like; secondly, drying a mixture with an air flow in a drier to obtain powder, pressing the powder, gradually heating a pressed sheet to a temperature of 700-850 DEG C, and sintering by heating to a temperature of 1150-1250 DEG C; and finally, naturally cooling to the room temperature.
Description
Technical field
The present invention relates to a kind of preparation method of resistance, relate in particular to a kind of preparation method of ZnO resistors.
Background technology
Resistance is widely used as a kind of electrical element commonly used, and ZnO resistors is as a kind of common type of voltage dependent resistor, and known kind is numerous, but present ZnO resistors preparation method also exists a lot of shortcomings.
Therefore, seek a kind of can be with low cost, technique is simple, well behaved Zinc-oxide piezoresistor preparation method becomes the problem of needing solution badly.
Summary of the invention
The invention provides a kind of preparation method of ZnO resistors, its material comprises major ingredient zinc oxide and is selected from cobalt, manganese, chromium, nickel, barium, bismuth, antimony, aluminium, silicon, gallium, the hotchpotch of one or more in the oxide compound of titanium etc., doping ratio is 5-10wt%, it is characterized in that, first powdered zinc oxide is prepared into suspension, with suspension be selected from cobalt, manganese, chromium, nickel, barium, bismuth, antimony, aluminium, silicon, gallium, the suspension of the hotchpotch of one or more in the oxide compound of titanium etc. mixes, then in moisture eliminator, make powder with air stream drying, this powder is suppressed, and compressed tablet is warming up to 700-850 ℃ gradually heats, and then be warmed up to 1150-1250 ℃ and carry out sintering, naturally cool at last room temperature.
Beneficial effect
The resistance of the present invention's preparation show that resistive performance is good, and the method processing requirement is simple, low cost of manufacture through test analysis.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used for explanation the present invention and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment 1
This ZnO resistors, its material comprises the hotchpotch of major ingredient zinc oxide and cobalt oxide and manganese oxide, doping ratio is 5wt%, first powdered zinc oxide is prepared into suspension, the suspension of suspension with the hotchpotch of cobalt oxide and manganese oxide is mixed, then in moisture eliminator, make powder with air stream drying, this powder is suppressed, and compressed tablet is warming up to 700 ℃ gradually heats, and then be warmed up to 1150 ℃ and carry out sintering, naturally cool at last room temperature.
Embodiment 2
This ZnO resistors, its material comprises the hotchpotch of major ingredient zinc oxide and chromic oxide, nickel oxide, barium oxide, bismuth oxide, doping ratio is 8wt%, first powdered zinc oxide is prepared into suspension, the suspension of suspension with the hotchpotch of chromic oxide, nickel oxide, barium oxide, bismuth oxide is mixed, then in moisture eliminator, make powder with air stream drying, this powder is suppressed, and compressed tablet is warming up to 750 ℃ gradually heats, and then be warmed up to 1200 ℃ and carry out sintering, naturally cool at last room temperature.
Embodiment 3
This ZnO resistors, its material comprises the hotchpotch of major ingredient zinc oxide and weisspiessglanz, aluminum oxide, silicon oxide, gallium oxide, titanium oxide, doping ratio is 10wt%, first powdered zinc oxide is prepared into suspension, the suspension of suspension with the hotchpotch of weisspiessglanz, aluminum oxide, silicon oxide, gallium oxide, titanium oxide is mixed, then in moisture eliminator, make powder with air stream drying, this powder is suppressed, and compressed tablet is warming up to 850 ℃ gradually heats, and then be warmed up to 1250 ℃ and carry out sintering, naturally cool at last room temperature.
Claims (2)
1. the preparation method of a ZnO resistors, its material comprises major ingredient zinc oxide and is selected from cobalt, manganese, chromium, nickel, barium, bismuth, antimony, aluminium, silicon, gallium, the hotchpotch of one or more in the oxide compound of titanium etc., doping ratio is 5-10wt%, it is characterized in that, first powdered zinc oxide is prepared into suspension, with suspension be selected from cobalt, manganese, chromium, nickel, barium, bismuth, antimony, aluminium, silicon, gallium, the suspension of the hotchpotch of one or more in the oxide compound of titanium etc. mixes, then in moisture eliminator, make powder with air stream drying, this powder is suppressed, and compressed tablet is warming up to 700-850 ℃ gradually heats, and then be warmed up to 1150-1250 ℃ and carry out sintering, naturally cool at last room temperature.
2. the method for claim 1, wherein its material comprises the hotchpotch of major ingredient zinc oxide and chromic oxide, nickel oxide, barium oxide, bismuth oxide, doping ratio is 8wt%, first powdered zinc oxide is prepared into suspension, the suspension of suspension with the hotchpotch of chromic oxide, nickel oxide, barium oxide, bismuth oxide is mixed, then in moisture eliminator, make powder with air stream drying, this powder is suppressed, and compressed tablet is warming up to 750 ℃ gradually heats, and then be warmed up to 1200 ℃ and carry out sintering, naturally cool at last room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105777436A CN103011800A (en) | 2012-12-27 | 2012-12-27 | Preparation method of zinc oxide resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105777436A CN103011800A (en) | 2012-12-27 | 2012-12-27 | Preparation method of zinc oxide resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103011800A true CN103011800A (en) | 2013-04-03 |
Family
ID=47960968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105777436A Pending CN103011800A (en) | 2012-12-27 | 2012-12-27 | Preparation method of zinc oxide resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103011800A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86102994A (en) * | 1985-04-29 | 1986-10-29 | Bbc勃朗勃威力有限公司 | Make the method for pressure-sensitive ceramic resistor and the resistance made from this method with zinc oxide |
| CN1393426A (en) * | 1995-03-06 | 2003-01-29 | 松下电器产业株式会社 | Zinc oxide series piezoelectric ceramic composition and its mfg. method |
| CN101096309A (en) * | 2006-06-30 | 2008-01-02 | 中国科学院合肥物质科学研究院 | Zinc oxide varistor ceramics and preparation method thereof |
| CN101436456A (en) * | 2008-12-11 | 2009-05-20 | 中国西电电气股份有限公司 | Method for preparing zinc oxide resistance card |
-
2012
- 2012-12-27 CN CN2012105777436A patent/CN103011800A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86102994A (en) * | 1985-04-29 | 1986-10-29 | Bbc勃朗勃威力有限公司 | Make the method for pressure-sensitive ceramic resistor and the resistance made from this method with zinc oxide |
| CN1393426A (en) * | 1995-03-06 | 2003-01-29 | 松下电器产业株式会社 | Zinc oxide series piezoelectric ceramic composition and its mfg. method |
| CN101096309A (en) * | 2006-06-30 | 2008-01-02 | 中国科学院合肥物质科学研究院 | Zinc oxide varistor ceramics and preparation method thereof |
| CN101436456A (en) * | 2008-12-11 | 2009-05-20 | 中国西电电气股份有限公司 | Method for preparing zinc oxide resistance card |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130403 |