CN102956652A - Photoelectric sensor - Google Patents
Photoelectric sensor Download PDFInfo
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- CN102956652A CN102956652A CN2011102399807A CN201110239980A CN102956652A CN 102956652 A CN102956652 A CN 102956652A CN 2011102399807 A CN2011102399807 A CN 2011102399807A CN 201110239980 A CN201110239980 A CN 201110239980A CN 102956652 A CN102956652 A CN 102956652A
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Abstract
本发明涉及一种光电传感器，其包括基于CMOS工艺的平面光波导及以集成电路实现的传感器，所述平面光波导及传感器集成在一芯片上，所述平面光波导设置在金属布线层上，所述传感器的感光元件用于响应所述平面光波导传导的光信号。本发明通过采用标准CMOS工艺制作平面光波导，然后将平面光波导与以集成电路实现的传感器制作在同一块芯片上，实现了平面光波导与传感器片上集成，因而体积小，能把入射的信号光更好地聚集到传感器的感光元件上，从而提高了传感器的量子效率，探测灵敏度及光学性能，其制作工艺简单，便于集成，解决了光电传感器难以同时集成复杂的光电性能在单一芯片上的问题，成本低，便于大规模产业化制作。
The invention relates to a photoelectric sensor, which includes a CMOS-based planar optical waveguide and a sensor realized by an integrated circuit, the planar optical waveguide and the sensor are integrated on a chip, and the planar optical waveguide is arranged on a metal wiring layer. The photosensitive element of the sensor is used to respond to the optical signal transmitted by the planar optical waveguide. The present invention manufactures the planar optical waveguide by adopting the standard CMOS process, and then manufactures the planar optical waveguide and the sensor realized by the integrated circuit on the same chip, and realizes the integration of the planar optical waveguide and the sensor on the chip, so the volume is small, and the incident signal can be The light is better concentrated on the photosensitive element of the sensor, thereby improving the quantum efficiency, detection sensitivity and optical performance of the sensor. The problem is that the cost is low, and it is convenient for large-scale industrial production.
Description
Technical field
The present invention relates to a kind of transducer, relate in particular to a kind of photoelectric sensor.
Background technology
A kind of as semiconductor technology, therefore numerous advantages such as that CMOS technique has is low in energy consumption, fast response time, antijamming capability is strong, integrated level is high have become the main flow technique of large scale integrated circuit in current semi-conductor industry.Along with the semiconductor technology especially fast development of CMOS technique, transistorized quantity is just becoming geometric progression constantly to increase on the one single chip, and this scaled trend of chip is so that chip has had more, more complicated function in Highgrade integration.Since the nineties in 20th century, the chip manufacturing process of integrated circuit, microprocessor has entered into the system single chip epoch of " nanoelectronic level " from " micron order ", " deep-submicron ", on a chip, can integratedly comprise CPU, DSP, logical circuit, analog circuit, radio circuit, memory and other circuit modules and embedded software etc., and be interconnected to constitute complete system.
Optical sensing is as an important branch of information science technology, very important application arranged in optical communication, industrial process control, environmental monitoring and national security etc. aspect numerous.Optical sensing can solve the sensitivity that fax sense technology exists low, easily be disturbed, the sensitive time is long, the problem that detects the uneasy congruent aspect of some chemical gas; By contrast, optical sensor has the many merits such as highly sensitive, that volume is little, anti-electromagnetic interference capability is strong, it is integrated to be convenient to, can detect online.Therefore in sensory field, the light sensing is occupied more and more consequence.
In recent years, as a member very important in the sensor technology, optical sensor has been widely used in industry-by-industry.At present, optical sensor mainly contains based on several types such as optical fiber, grating and planar optical waveguides: compare with the slab guide optical sensor, Fibre Optical Sensor treatment process relative complex, and can't realize that chip-scale is integrated, and planar optical waveguide simple to make, be easy to the advantage such as integrated and have the potentiality that develop on a large scale very much.Although present optical sensing is fast-developing, never have in design great breakthrough.Owing to being subject to the restriction of optics size and material, the preparation of planar light sensor-based system needs complicated processing process usually, such as photoetching, electron beam lithography or nanometer embossing, and be difficult to the photoelectric properties of while integrated complex on one chip, be not easy to realize extensive industrialization making.
Summary of the invention
Technical problem to be solved by this invention is, for above-mentioned the deficiencies in the prior art, proposes a kind of photoelectric sensor, it has improved the quantum efficiency of transducer, detectivity and optical property, and volume is little, manufacture craft is simple, and cost is low, is convenient to extensive industrialization and makes.
The technical solution adopted for the present invention to solve the technical problems is, a kind of photoelectric sensor is proposed, it comprises that the planar optical waveguide based on CMOS technique reaches the transducer of realizing with integrated circuit, described planar optical waveguide and transducer are integrated on the chip, described planar optical waveguide is arranged on the metal wiring layer, and the photo-sensitive cell of described transducer is used for responding the light signal of described planar optical waveguide conduction.
Further, described planar optical waveguide is provided with skin and internal layer, the described outer described internal layer that coats.
Further, described skin is provided with N+ buried regions, heavily doped dark N trap, oxide layer and passivation layer, and described N+ buried regions is positioned at a side of described internal layer, and described dark N trap, oxide layer and passivation layer are positioned at the opposite side of described internal layer.
Further, described internal layer is lightly doped P+ epitaxial loayer.
Further, described planar optical waveguide also comprises P type silicon substrate, forms described N+ buried regions by the N+ Implantation on described P type silicon substrate.
Further, form described internal layer by plasma sputtering above the described N+ buried regions.
Further, form two described heavily doped dark N traps by nitride masking and Implantation on the described P+ epitaxial loayer, described two heavily doped dark N traps are positioned at the two ends of described P+ epitaxial loayer.
Further, described P+ epitaxial loayer and the top growth of dark N trap form described oxide layer, and the top growth of described oxide layer forms described passivation layer.
Further, described transducer is cmos sensor.
Further, described cmos sensor is provided with some dot structures, each dot structure is provided with photodiode, amplifier and the field effect transistor that is electrically connected along order, and the source electrode of described field effect transistor links to each other with alignment, and the grid of described field effect transistor links to each other with line.
In sum, photoelectric sensor of the present invention is by adopting standard CMOS process to make planar optical waveguide, then with planar optical waveguide and the sensor production that realizes with integrated circuit on the same chip, realized on planar optical waveguide and the sensor chip integrated, thereby volume is little, can gather the flashlight of incident better on the photo-sensitive cell of transducer, thereby improved the quantum efficiency of transducer, detectivity and optical property, its manufacture craft is simple, is convenient to integratedly, has solved photoelectric sensor and has been difficult to the simultaneously problem of photoelectric properties on one chip of integrated complex, cost is low, is convenient to extensive industrialization and makes.
Description of drawings
Fig. 1 is the structural representation of photoelectric sensor of the present invention.
Fig. 2 to Fig. 7 is the making flow chart of planar optical waveguide of the present invention.
Fig. 8 is the circuit diagram of the dot structure of transducer of the present invention.
Embodiment
The present invention will be further described below in conjunction with drawings and the specific embodiments:
See also Fig. 1, photoelectric sensor of the present invention comprises that the photo-sensitive cell of described transducer 2 is used for responding the light signal of described planar optical waveguide 1 conduction based on the planar optical waveguide 1 of CMOS technique and the transducer 2 of realizing with integrated circuit.Described planar optical waveguide 1 and transducer 2 are integrated on the chip, and described planar optical waveguide 1 is arranged on the metal wiring layer, and described planar optical waveguide 1 enters in the described transducer 2 by the grating coupling optical signal.To be integrated on the same chip with transducer 2 based on the planar optical waveguide 1 of CMOS technique, thereby reduce outside interference to a great extent, can improve photoelectric properties, reduce simultaneously the production cost of transducer 2, be convenient to extensive industrialization and make.
See also Fig. 2 to Fig. 7, described planar optical waveguide 1 comprises P type silicon substrate 11, internal layer and skin, and described internal layer is lightly doped P+ epitaxial loayer 13.The described outer described internal layer that coats, described skin is provided with N+ buried regions 12, heavily doped dark N trap 15, oxide layer 16 and passivation layer 17, described N+ buried regions 12 is positioned at a side of described internal layer, and described dark N trap 15, oxide layer 16 and passivation layer 17 are according to the order setting and be positioned at the opposite side of described internal layer.In the present embodiment, the thickness of described P type silicon substrate 11 is 250 μ m, the doping content of the heavy doping N+ buried regions 12 that Implantation forms is 1020/cm3, thickness is 10 μ m, the doping content of the doped with P+epitaxial loayer 13 that forms by plasma sputtering is 1016/cm3, and thickness is 2 μ m, and the implantation concentration of the heavily doped dark N trap 15 that forms by Implantation is 1020/cm3, injecting the degree of depth is 1 μ m, oxide layer 16 be respectively μ m and 10 μ m with passivation layer 17 growth thickness.
The manufacturing process flow of described planar optical waveguide 1 is as follows: at first pass through the N+ Implantation at P type silicon substrate 11, form heavily doped N+ buried regions 12; Then pass through plasma sputtering, the lightly doped P+ epitaxial loayer 13 of growth one deck above heavily doped N+ buried regions 12; Utilize subsequently sheltering and Implantation of silicon nitride masking layer 14, form two heavily doped dark N traps 15 at P+ epitaxial loayer 13, described two heavily doped dark N traps 15 are positioned at the two ends of described P+ epitaxial loayer 13; Follow growth active area oxide layer 16 above described P+ epitaxial loayer 13 and dark N trap 15; Recycling silicon nitride masking layer 14 is sheltered heavily doped dark N trap 15 districts, and growth field oxide 16 just forms fiber waveguide.
See also Fig. 1 and Fig. 8, described transducer 2 is cmos sensors, described cmos sensor 2 is provided with some dot structures, each dot structure is provided with photodiode LED, amplifier A and the field effect transistor T that is electrically connected along order, the source electrode of described field effect transistor T links to each other with alignment b, and the grid of described field effect transistor T links to each other with line a.Line a and alignment b and other parts be connected to prior art, do not repeat them here.
Described photodiode LED is as the photo-sensitive cell of described cmos sensor, and this photo-sensitive cell is made by semiconductor.Semiconductor is the material between conductor and insulator, the significant difference of it and metal is to have a band gap (Ebg) in the valence band that is full of fully by electronics (Evb) top and underfill or the conduction band (Ecb) that partly is full of at the end, so that the interaction between electronic structure and the conduction band electron attitude weakens.Just because of the existence of semiconductor band gap so that it has special PhotoelectrochemicalProperties Properties, semi-conductive valence band Electron absorption luminous energy enters conduction band and stay the hole in valence band after being subject to optical excitation, thereby produce the p-electron hole pair of photoproduction free carrier, electron hole pair just can form photovoltage once separating, and forms photoelectric current at external circuit.In the common linear relationship certain with existence to be measured of the output photoelectric stream of measuring range inner sensor 2, therefore just can detect to be measured by measuring photogenerated current.
The prerequisite that cmos sensor 2 obtains extensive uses is its higher sensitivity that has, than short exposure time and the Pixel Dimensions that day by day dwindles.A yardstick of pixel sensitivity degree is the fill factor, curve factor ratio of whole elemental area (photosensitive area with) and the product of quantum efficiency (quantity of the electronics that is generated by the photon of bombardment screen).Ccd sensor 2 has a very large fill factor, curve factor because of the inherent characteristic of its technology, and in cmos sensor 2, for noise objective and the level of sensitivity that realizes to compare favourably with the CCD transducer, common way is to have assembled the active pixel structure to cmos sensor 2, it causes fill factor, curve factor to reduce, it is shared that reason is that the sizable a part of area in pixel surface is exaggerated device A, and the free space of leaving photodiode LED for is less.The present invention gathers the flashlight of incident on the photo-sensitive cell of transducer 2 better by described planar optical waveguide 1, namely on the photodiode LED, thereby has improved the quantum efficiency of transducer 2, thereby has improved the pixel sensitivity degree.
In sum, photoelectric sensor 2 of the present invention is by adopting standard CMOS process to make planar optical waveguide 1, then planar optical waveguide 1 and the transducer 2 of realizing with integrated circuit are produced on the same chip, realized that 2 of planar optical waveguide 1 and transducers are upper integrated, thereby volume is little, can gather the flashlight of incident better on the photo-sensitive cell of transducer 2, thereby improved the quantum efficiency of transducer 2, detectivity and optical property, its manufacture craft is simple, is convenient to integratedly, has solved photoelectric sensor 2 and has been difficult to the simultaneously problem of photoelectric properties on one chip of integrated complex, cost is low, is convenient to extensive industrialization and makes.
The above is described preferred embodiment of the present invention by reference to the accompanying drawings; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment only is schematic; rather than restrictive; those of ordinary skill in the art is under enlightenment of the present invention; do not breaking away from the scope situation that aim of the present invention and claim protect; also can make a lot of forms; for example; described cmos sensor 2 is replaced with PhotoelectrochemicalSemiconductor Semiconductor Biosensors 2; utilize semi-conductive photoelectric characteristic to detect ion concentration and bioprocess relevant parameter in the biochemical reaction relevant with photogenerated current or photovoltage, such as pH; O2; CO2; blood sugar and nerve cell wakeup voltage etc.These all belong within protection scope of the present invention.
Claims (10)
1. photoelectric sensor, it is characterized in that: comprise based on the planar optical waveguide of CMOS technique and the transducer of realizing with integrated circuit, described planar optical waveguide and transducer are integrated on the chip, described planar optical waveguide is arranged on the metal wiring layer, and the photo-sensitive cell of described transducer is used for responding the light signal of described planar optical waveguide conduction.
2. photoelectric sensor according to claim 1, it is characterized in that: described planar optical waveguide is provided with skin and internal layer, the described outer described internal layer that coats.
3. photoelectric sensor according to claim 2, it is characterized in that: described skin is provided with N+ buried regions, heavily doped dark N trap, oxide layer and passivation layer, described N+ buried regions is positioned at a side of described internal layer, and described dark N trap, oxide layer and passivation layer are positioned at the opposite side of described internal layer.
4. according to claim 2 or 3 described photoelectric sensors, it is characterized in that: described internal layer is lightly doped P+ epitaxial loayer.
5. photoelectric sensor according to claim 3, it is characterized in that: described planar optical waveguide also comprises P type silicon substrate, forms described N+ buried regions by the N+ Implantation on described P type silicon substrate.
6. photoelectric sensor according to claim 3 is characterized in that: form described internal layer by plasma sputtering above the described N+ buried regions.
7. photoelectric sensor according to claim 4 is characterized in that: form two described heavily doped dark N traps by nitride masking and Implantation on the described P+ epitaxial loayer, described two heavily doped dark N traps are positioned at the two ends of described P+ epitaxial loayer.
8. photoelectric sensor according to claim 4 is characterized in that: the described oxide layer of growth formation above described P+ epitaxial loayer and the dark N trap, the described passivation layer of described oxide layer top growth formation.
9. according to claim 1 to 3 each described photoelectric sensors, it is characterized in that: described transducer is cmos sensor.
10. according to claim 1 to 3 each described photoelectric sensors, it is characterized in that: described cmos sensor is provided with some dot structures, each dot structure is provided with photodiode, amplifier and the field effect transistor that is electrically connected along order, the source electrode of described field effect transistor links to each other with alignment, and the grid of described field effect transistor links to each other with line.
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| CN2011102399807A CN102956652A (en) | 2011-08-19 | 2011-08-19 | Photoelectric sensor |
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| CN2011102399807A CN102956652A (en) | 2011-08-19 | 2011-08-19 | Photoelectric sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403766A (en) * | 2016-05-19 | 2017-11-28 | 日月光半导体制造股份有限公司 | Semiconductor device package |
| CN106629572B (en) * | 2016-12-26 | 2018-08-24 | 武汉邮电科学研究院 | A kind of silicon based photon chip of integrated germanium thermometer temperature sensor |
| CN111214209A (en) * | 2018-11-27 | 2020-06-02 | 晶元光电股份有限公司 | Optical sensing module |
Citations (4)
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| CN1137520C (en) * | 1995-05-12 | 2004-02-04 | 富士通株式会社 | Integrated optical module including waveguide and photoreception device |
| CN101082687A (en) * | 2007-07-09 | 2007-12-05 | 陈铭义 | Optical waveguides on piece total compatible with standard CMOS process and method for making same |
| US20090041406A1 (en) * | 2007-08-08 | 2009-02-12 | Thomas Schulz | Integrated circuit including non-planar structure and waveguide |
| CN102066997A (en) * | 2008-04-18 | 2011-05-18 | 索尼达德克奥地利股份公司 | Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement |
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2011
- 2011-08-19 CN CN2011102399807A patent/CN102956652A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1137520C (en) * | 1995-05-12 | 2004-02-04 | 富士通株式会社 | Integrated optical module including waveguide and photoreception device |
| CN101082687A (en) * | 2007-07-09 | 2007-12-05 | 陈铭义 | Optical waveguides on piece total compatible with standard CMOS process and method for making same |
| US20090041406A1 (en) * | 2007-08-08 | 2009-02-12 | Thomas Schulz | Integrated circuit including non-planar structure and waveguide |
| CN102066997A (en) * | 2008-04-18 | 2011-05-18 | 索尼达德克奥地利股份公司 | Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403766A (en) * | 2016-05-19 | 2017-11-28 | 日月光半导体制造股份有限公司 | Semiconductor device package |
| CN107403766B (en) * | 2016-05-19 | 2019-08-30 | 日月光半导体制造股份有限公司 | Semiconductor device package |
| CN106629572B (en) * | 2016-12-26 | 2018-08-24 | 武汉邮电科学研究院 | A kind of silicon based photon chip of integrated germanium thermometer temperature sensor |
| CN111214209A (en) * | 2018-11-27 | 2020-06-02 | 晶元光电股份有限公司 | Optical sensing module |
| CN111214209B (en) * | 2018-11-27 | 2024-01-09 | 晶元光电股份有限公司 | Optical sensing module |
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Owner name: SHENZHEN GUANGQI INTELLIGENT PHOTONICS TECHNOLOGY Free format text: FORMER OWNER: SHENZHEN KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY Effective date: 20150715 Free format text: FORMER OWNER: SHENZHEN KUANG-CHI INNOVATION TECHNOLOGY CO., LTD. Effective date: 20150715 |
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Effective date of registration: 20150715 Address after: 518000 Guangdong city of Shenzhen province Futian District Shennan Road and CaiTian Road intersection East Xintiandi Plaza C block 2007-27 Applicant after: Shenzhen Guang Qi intelligent photonic Technology Co., Ltd. Address before: 518000 Nanshan District City, Guangdong province high tech Zone in the middle of a high tech building, No. 9 software building Applicant before: Shenzhen Kuang-Chi Institute of Advanced Technology Applicant before: Shenzhen Kuang-Chi Innovation Technology Co., Ltd. |
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