CN102799081A - Mask plate workpiece platform of stepping type multi-exposure stepper and exposure technology - Google Patents
Mask plate workpiece platform of stepping type multi-exposure stepper and exposure technology Download PDFInfo
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- CN102799081A CN102799081A CN2012103352535A CN201210335253A CN102799081A CN 102799081 A CN102799081 A CN 102799081A CN 2012103352535 A CN2012103352535 A CN 2012103352535A CN 201210335253 A CN201210335253 A CN 201210335253A CN 102799081 A CN102799081 A CN 102799081A
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- 238000005516 engineering process Methods 0.000 title claims abstract description 13
- 238000001259 photo etching Methods 0.000 claims description 9
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- 238000004519 manufacturing process Methods 0.000 abstract description 3
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- 230000008569 process Effects 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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Abstract
The invention belongs to the technical field of semiconductor manufacturing and provides a mask plate workpiece platform of a stepping type multi-exposure stepper for the first time. The mask plate workpiece platform comprises a fixed platform for placing a mask plate, wherein the mask plate has a practical graphic area. The fixed platform is provided with an X-axis shifting unit and a Y-axis shifting unit which correspond to a stepper body, the extension directions of both an X axis and a Y axis are parallel to the mask plate, and the X axis and the Y axis are vertical to each other. The mask plate operating platform with the characteristics is adopted, when the exposure technology is carried out, the diagonal center of the practical graphic area to be exposed and the lens center of the stepper can be superposed through the X-axis shifting unit and/or the Y-axis shifting unit, furthermore, the problem that the optical lens of the stepping type multi-exposure stepper is not uniformly heated locally is avoided, and thus, the aligning precision of the stepper can be improved.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, especially a kind of mask plate work stage design that improves the step-by-step movement repeated exposure litho machine of multilayer integration light shield technology alignment precision.
Background technology
Photoetching technique is followed the continuous progress of integrated circuit fabrication process; Constantly dwindling of live width; It is more and more littler that the area of semiconductor devices is just becoming, and semi-conductive layout develops into the integrated circuit of integrating high-density multifunction from common simple function discrete device; By initial IC (integrated circuit) subsequently to LSI (large scale integrated circuit), VLSI (VLSI (very large scale integrated circuits)), until the ULSI of today (ULSI), the area of device further dwindles, function is powerful more comprehensively.Consider the restriction of the complicacy, chronicity of technique research and development and high cost or the like unfavorable factor; How on the basis of prior art level, further to improve the integration density of device; Dwindle area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thereby improve overall interests; To more and more receive the chip designer, the attention of manufacturer.
In the innovation process that improves constantly the device integration density, mask plate just stands in the breach.In semiconductor was made, mask plate was serving as the role of carrier, relies on it just, and photoetching can realize deviser's thinking on silicon chip, let semiconductor realize various functions.Along with photoetching technique constantly strides forward to more tiny technology node; The price of mask plate is also constantly increased sharply; For example be directed to 65nm, 45nm, 32nm and 22nm process node respectively, the price of mask plate is respectively 3.5 ten thousand U.S. dollars, 80,000 U.S. dollars, 150,000 U.S. dollars with 200,000 U.S. dollars.
Multilayer is integrated light shield (Multi-Layer Mask; MLM); Referring to accompanying drawing 1, (the actual graphical district 4-1 among the figure 4-2) is placed on the same mask plates (3) to it is characterized in that multilayer is used the photoetching process layer of same type lithographic exposure apparatus; Can use mask plate to greatest extent, and then practice thrift cost.This mode is accepted by vast client, becomes a kind of general business model of industry.
Mask plate work stage and mask plate principle of work synoptic diagram referring to Fig. 2 and traditional step-by-step movement (Stepper) repeated exposure litho machine shown in Figure 3; When above-mentioned litho machine is applied to multilayer integration illumination; The actual graphical zone that mask plate shadow shield (5) will not make public is blocked, and only exposes actual graphical zone (4) to be made public and gets final product.
Yet the layout pattern of aforementioned mask plate can cause the uneven problem of optical lens local heating for step-by-step movement repeated exposure litho machine.This problem can cause figure deformation to worsen, and then reduces the alignment precision performance of litho machine.Referring to Fig. 4, the design light path before representing to make public with dark multiple spot line among the figure, it is mainly corresponding to the first half of left side optics convex lens; Represent the light path blocked by shadow shield with light multiple spot line, it is mainly corresponding to the latter half of left side optics convex lens; In the actual exposure process, produce distortion (representing the distortion situation with symbol de among the figure) because the first half of optics convex lens is heated, the actual exposure light path is represented with solid line.It is thus clear that actual light path (solid line) is compared with design light path (dark multiple spot line) has difference, and then the figure that on wafer, makes public produces distortion (signal this distortion in the rightmost side among the figure).Along with technology is constantly advanced, the requirement of product alignment specification is strict all the more, and the problems referred to above can not be tolerated.
Summary of the invention
Technical matters to be solved by this invention is through the improvement to step-by-step movement repeated exposure litho machine, improves the technology alignment precision that multilayer is integrated light shield.
The technical scheme that the present invention adopted is: a kind of mask plate work stage of step-by-step movement repeated exposure litho machine, comprise the stationary platform that is used to place mask plate, and have the actual graphical zone on the said mask plate.Said stationary platform is with respect to being provided with the moving device of X shaft moving device and y-axis shift between the litho machine body, the X of institute axle and Y axle bearing of trend all are parallel to mask plate, and the X axle is vertical each other with the Y axle.
Accordingly, adopt the mask plate worktable of above-mentioned characteristic, when carrying out exposure technology, can lead to the moving device of X shaft moving device and/or y-axis shift, making needs the diagonal line center in the actual graphical of exposure zone to overlap with the photoetching machine lens center.
The invention enables the mask plate work stage can cooperate the exposure technology demand and mobile mask plate, avoid the uneven problem of optical lens local heating of step-by-step movement repeated exposure litho machine, thereby can improve the alignment precision performance of litho machine.
Description of drawings
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 integrates the structural representation of light shield for multilayer;
Fig. 2 is the mask plate work stage of step-by-step movement repeated exposure litho machine in the prior art and the upward view of mask plate;
Fig. 3 is the cut-open view of Fig. 2;
Fig. 4 integrates the light shield layout pattern for multilayer in the prior art and causes the indicative of local optical camera lens of step-by-step movement repeated exposure litho machine to be heated inhomogeneous and the distortion synoptic diagram;
The cut-open view that Fig. 5 integrates light shield for a kind of step-by-step movement repeated exposure mask aligner mask plate work stage and the multilayer of the present invention's proposition;
Fig. 6 a and 6b move the procedure chart of mask plate for Fig. 5 corresponding mask plate work stage;
Fig. 7 makes the indicative of local optical camera lens of step-by-step movement repeated exposure litho machine be heated evenly and the distortion synoptic diagram for adopting mask plate work stage of the present invention.
Wherein: 1, projection lens; 2, the mask plate stationary platform; 3, mask plate; 4,4-1,4-2, the actual graphical zone; 5, the mask plate shadow shield; 6, mask plate work stage levelling device; 7, mask plate work stage X shaft moving device; 8, mask plate work stage y-axis shift moves device.
Embodiment
Description through background technology can know, in the existing actual exposure process, because the first half of optics convex lens is heated and is produced distortion among Fig. 4, cause actual light path to be compared with the design light path and have difference, and then the figure that on wafer, makes public produces gross distortion.Core of the present invention is to make the mask plate work stage can cooperate the exposure technology demand and moves mask plate; Avoid the uneven problem of optical lens local heating of step-by-step movement repeated exposure litho machine; Thereby prevent that exposure figure from worsening, and improve the alignment precision performance of litho machine.
Referring to Fig. 5; The mask plate work stage of the step-by-step movement repeated exposure litho machine that the present invention proposes; Comprise the stationary platform 2 that is used to place mask plate 3; Especially said stationary platform is with respect to being provided with the moving device of X shaft moving device and y-axis shift between the litho machine body, said X axle and Y axle bearing of trend all are parallel to mask plate 3, and the X axle is vertical each other with the Y axle.Particularly, the moving device 8 of y-axis shift is set on the said litho machine body, on the moving device 8 of y-axis shift X shaft moving device 7 is set, X shaft moving device 7 connects stationary platform 2 through levelling device 6 again.Thus, when said mask plate 3 was integrated light shield for the multilayer with a plurality of actual graphical zone 4-1,4-2, stationary platform 2 can be adjusted mobile according to different actual graphical regional location designs.
Referring to Fig. 6 a, a multilayer integration light shield is placed on the mask plate work stage of the present invention's proposition, if need exposure 4-1; Then according to the mask plate design data; Multilayer is integrated light shield move down, the diagonal line center, graphics field of 4-1 is overlapped, with the photoetching machine lens center referring to Fig. 6 b.At this moment, the 4-2 that will need not make public through shadow shield 5 blocks, and carries out the exposure of 4-1, can guarantee that the exposure of 4-1 makes the photoetching machine lens thermally equivalent.Referring to shown in Figure 7, the design light path before the multiple spot line is represented to make public, solid line is represented the actual exposure light path; Because diagonal line center, 4-1 graphics field overlaps with the photoetching machine lens center, the optics convex lens is heated evenly, representes the distortion after the optical male mirror is heated with the position shown in the de ' among the figure; So far; Though still there is metaboly in the exposure figure on the wafer, the inventor is through experimental verification, and this is out of shape less than prior art more than 20%.For example, for certain silicon chip of same batch, adopt existing mask plate work stage, the maximum register partial difference of directions X and Y direction is respectively 105nm, 50nm; And after having used mask plate work stage of the present invention, the maximum register partial difference of directions X and Y direction is merely 55nm, 25nm respectively, satisfies the technological requirement of 70nm.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting claim; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (6)
1. the mask plate work stage of a step-by-step movement repeated exposure litho machine; Comprise the stationary platform that is used to place mask plate; Has the actual graphical zone on the said mask plate; It is characterized in that: said stationary platform is with respect to being provided with the moving device of X shaft moving device and y-axis shift between the litho machine body, said X axle and Y axle bearing of trend all are parallel to mask plate, and the X axle is vertical each other with the Y axle.
2. mask plate work stage as claimed in claim 1 is characterized in that: the moving device of y-axis shift is set on the said litho machine body, on the moving device of y-axis shift the X shaft moving device is set.
3. mask plate work stage as claimed in claim 2 is characterized in that: said X shaft moving device connects said stationary platform through levelling device.
4. mask plate work stage as claimed in claim 1 is characterized in that: have two above actual graphical zones on the said mask plate.
5. mask plate work stage as claimed in claim 4 is characterized in that: also be provided with the shadow shield that is used to block the actual graphical zone that need not make public on the said mask plate work stage.
6. an exposure technology that has adopted mask plate work stage as claimed in claim 1 is characterized in that: through X shaft moving device and/or the moving device of y-axis shift, make the regional diagonal line center of actual graphical that needs to make public overlap with the photoetching machine lens center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103352535A CN102799081A (en) | 2012-09-11 | 2012-09-11 | Mask plate workpiece platform of stepping type multi-exposure stepper and exposure technology |
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| CN2012103352535A CN102799081A (en) | 2012-09-11 | 2012-09-11 | Mask plate workpiece platform of stepping type multi-exposure stepper and exposure technology |
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| CN102799081A true CN102799081A (en) | 2012-11-28 |
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| CN2012103352535A Pending CN102799081A (en) | 2012-09-11 | 2012-09-11 | Mask plate workpiece platform of stepping type multi-exposure stepper and exposure technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102866592A (en) * | 2012-09-17 | 2013-01-09 | 上海华力微电子有限公司 | Photoetching exposure method for improving alignment precision of multi-layer mask process |
| CN103411667A (en) * | 2013-07-18 | 2013-11-27 | 致茂电子(苏州)有限公司 | Light-emitting element spot measurement machine |
| CN104102094A (en) * | 2014-06-27 | 2014-10-15 | 京东方科技集团股份有限公司 | Mask baffle plate and fabrication method thereof |
| CN114256207A (en) * | 2021-12-13 | 2022-03-29 | 浙江大学杭州国际科创中心 | Method for manufacturing wafer surface mark and method for positioning wafer in scanning electron microscope |
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| CN1445605A (en) * | 2001-12-21 | 2003-10-01 | Asml荷兰有限公司 | Method for manufacturing device, manufactured device and affset printing device |
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| CN101661221A (en) * | 2009-09-09 | 2010-03-03 | 上海宏力半导体制造有限公司 | Mask plate for exposure of the same layer and multi-exposure method thereof |
| CN201503535U (en) * | 2009-06-30 | 2010-06-09 | 清华大学 | Multi-mask lithography machine silicon wafer stage system arranged in array |
| CN101957562A (en) * | 2009-03-26 | 2011-01-26 | 上海微电子装备有限公司 | Double-exposure method |
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2012
- 2012-09-11 CN CN2012103352535A patent/CN102799081A/en active Pending
Patent Citations (7)
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| CN1445605A (en) * | 2001-12-21 | 2003-10-01 | Asml荷兰有限公司 | Method for manufacturing device, manufactured device and affset printing device |
| US20050012914A1 (en) * | 2002-01-28 | 2005-01-20 | Lin Burn J. | Multiple mask step and scan aligner |
| CN1573566A (en) * | 2003-05-30 | 2005-02-02 | Asml荷兰有限公司 | Masking device, lithographic apparatus, and device manufacturing method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102866592A (en) * | 2012-09-17 | 2013-01-09 | 上海华力微电子有限公司 | Photoetching exposure method for improving alignment precision of multi-layer mask process |
| CN102866592B (en) * | 2012-09-17 | 2015-07-29 | 上海华力微电子有限公司 | A kind of method of photolithographic exposure improving multi-layer mask technique alignment precision |
| CN103411667A (en) * | 2013-07-18 | 2013-11-27 | 致茂电子(苏州)有限公司 | Light-emitting element spot measurement machine |
| CN104102094A (en) * | 2014-06-27 | 2014-10-15 | 京东方科技集团股份有限公司 | Mask baffle plate and fabrication method thereof |
| CN114256207A (en) * | 2021-12-13 | 2022-03-29 | 浙江大学杭州国际科创中心 | Method for manufacturing wafer surface mark and method for positioning wafer in scanning electron microscope |
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Application publication date: 20121128 |