CN102751188B - Chemical machinery polishing method for ultralow dielectric material - Google Patents
Chemical machinery polishing method for ultralow dielectric material Download PDFInfo
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- CN102751188B CN102751188B CN201210220362.2A CN201210220362A CN102751188B CN 102751188 B CN102751188 B CN 102751188B CN 201210220362 A CN201210220362 A CN 201210220362A CN 102751188 B CN102751188 B CN 102751188B
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Abstract
The invention provides a chemical machinery polishing method for ultralow dielectric material, which comprises the following steps of: processing the surface of a first dielectric layer by hydrocarbon gas to form a first carbon layer; forming a first groove in the first carbon layer, the first dielectric layer and a first medium barrier layer; carrying out chemical machinery polishing to first groove electroplated copper formed after a first diffusion barrier layer formed on the side wall of the first groove is subjected to metal deposition, and depositing a second medium barrier layer and a second dielectric layer; processing the surface of the second dielectric layer by the hydrocarbon gas to form a second carbon layer; forming a first through hole and a second groove; depositing a second diffusion barrier layer; carrying out metal filling to the first through hole and the second groove on the second diffusion barrier layer; carrying out the chemical machinery polishing technology to the above structure; and stopping on the second carbon layer. The chemical machinery polishing method for the ultralow dielectric material, which is disclosed by the invention, is a surface processing method for reducing loss generated on the ultralow dielectric constant film by the chemical machinery polishing.
Description
Technical field
The present invention relates to semiconductor integrated circuit and manufacture field, particularly relate to a kind of cmp method of ultra-low dielectric materials, super low dielectric constant film is produced to the surface treatment method lost to reduce chemico-mechanical polishing.
Background technology
Along with the continuous progress of semiconductor integrated circuit technique technology, when semiconductor devices shrink is to the scope of deep-submicron, resistance (R) in interconnected and electric capacity (C) easily produce ghost effect, the time delay (RC time delay) causing metal connecting line to transmit and signal cross-talk.Therefore, high performance integrated circuit chip needs alap wire capacitances resistance signal to postpone and signal cross-talk.For this reason, need the isolated material of low resistance material as filled low-k (low k dielectric) between the interlayer of copper metal line and line and line to reduce RC time of delay because dead resistance and parasitic capacitance cause, thus reach the object improving device performance.But, when the material of plain conductor converts the lower copper of resistivity to by aluminium time, because copper very fast diffusion enters silica and silicon, and the etching of copper is comparatively difficult, therefore, prior art, by being converted to double damask structure, then inserts copper interconnected to realize copper, to impel low resistance material application in integrated circuit production technology as copper or advanced low-k materials.
Existing more common a kind of take ultra-low dielectric materials as the process for manufacture of semiconductor device of dielectric layer be example, can see Figure 1A to Fig. 1 F.
First, see Figure 1A, one basalis 100 is provided, described basalis 100 is formed the first etch stop layer 101, depositing first dielectric layer 102 on the first etch stop layer (Etch Stop layer) 101, and make the first groove 1062 in the first dielectric layer 102 and the first etch stop layer 101 after, adopt physical vapor deposition (physical vapor deposition, PVD) technique to form the first diffusion impervious layer 104.
Secondly, see Figure 1B, plated metal on the first diffusion impervious layer 104, form the first groove electro-coppering 1062 ', and chemico-mechanical polishing (CMP) technique is carried out to said structure, and stop on the surface of the first dielectric layer 102, make the surface planarisation of the first groove electro-coppering 1062 ', and make the first groove electro-coppering 1062 ' concordant with the surface of the first dielectric layer 102.
Then, see Fig. 1 C, the surface of the first dielectric layer 102 and the first groove electro-coppering 1062 ' deposits the second etch stop layer 108, second dielectric layer 110, patterned photoresist (not shown) from the bottom to top successively, and complete the making of the first through hole 112 and the second groove 114 with patterned photoresist for mask etch, remove photoresist by cineration technics.
Then, see Fig. 1 D, the sidewall of the second etch stop layer 108, the surface of the second dielectric layer 110 and sidewall adopt PVD sputtering sedimentation second diffusion impervious layer 118.
Then, see Fig. 1 E, the second diffusion impervious layer 118 utilize the technique such as plating carry out till filling deposits fill up metal 120 in the first through hole 112 and the second groove 114.
Finally, see Fig. 1 F, chemico-mechanical polishing (CMP) technique being carried out to said structure, and stop at the second dielectric layer 110 on the surface, carrying out effectively clean rear another dielectric material of deposition, then starting the preparation of next interconnection layer.
At present in the above technology of 45 nanometer, the ultralow dielectric insulating dielectric materials generally adopted is silica (the carbon doped oxide) film (K < 2.7) of porous carbon dope.By the use of ultra-low dielectric constant material, under the condition not reducing wiring density, ghost effect can be effectively reduced, decrease RC interconnect delay times, thus improve the speed of integrated circuit.But, along with the requirement that dielectric material dielectric constant constantly reduces, voidage and the phosphorus content of dielectric material constantly increase, and structure becomes more and more loose, in many technical processs, after the CMP (shown in Figure 1B and Fig. 1 F) as technique scheme, owing to there is porous in carbon doped silicon oxide, CMP carries out introducing the pollutions such as such as lapping liquid in process and penetrates in porous, thus changes dielectric constant, causes damage 122 and the damage 122 ' on top layer.If effectively can not remove these to pollute, otherwise these pollutions can produce serious influence to the performance of integrated circuit, reliability and productive rate.
As can be seen here, quote this new material when being applied in double damask structure as ultra-low dielectric constant material, in the process forming double damask structure, described CMP will produce the destruction of varying level to different surfaces, especially the region of dielectric layer, and metal surface, thus the impaired thickness of the super low dielectric constant film in such as dielectric layer region is increased, cause the change of dielectric constant large.Therefore, the introducing of this new material adds process integration difficulty.For this reason, the dielectric constant how effectively avoiding advanced low-k materials to damage causing improves, and how to improve layer on surface of metal state, improves the adhesion with lower floor, thus improves electromigration and stress migration performance, becomes a current particularly important problem.
In order to solve the problem, when using these low resistance material or advanced low-k materials in integrated circuit production technology, need the damage eliminated and come to advanced low-k materials in the technical processs such as CMP that seeks redress, but in the implementation process of reality, still there is sizable barrier, urgently introduce the new method effectively improving above-mentioned defect, to solve the topmost problem that low resistance material faces when integrated circuit production technology uses as copper and/or advanced low-k materials etc.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of cmp method of ultra-low dielectric materials, to reduce the damage of chemico-mechanical polishing to super low dielectric constant film.
For solving the problem, the cmp method of a kind of ultra-low dielectric materials that the present invention proposes, comprises the steps:
One basalis is provided, described basalis deposits first medium barrier layer, the first dielectric layer from the bottom to top successively;
The surface adopting hydrocarbon gas plasma activated chemical vapour deposition technique (PCVD) to process the first dielectric layer forms the first carbon-coating;
Etch process is adopted to etch the first carbon-coating, the first dielectric layer and first medium barrier layer from top to bottom successively, the first groove is formed in the first carbon-coating, the first dielectric layer and first medium barrier layer, and form the first diffusion impervious layer on the sidewall and the first carbon-coating of the first groove after, carry out metal deposition again, form the first groove electro-coppering, CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of the first carbon-coating, then deposit second medium barrier layer, the second dielectric layer successively from the bottom to top on the surface of the first carbon-coating and the first groove electro-coppering;
The surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT second dielectric layer is adopted to form the second carbon-coating;
Adopt etch process to etch the second carbon-coating, the second dielectric layer, second medium barrier layer from top to bottom successively, form the first through hole and the second groove that are connected from top to bottom;
The sidewall of the first through hole and the inner surface of the second groove and the second carbon-coating deposit the second diffusion impervious layer;
Till the enterprising row metal deposition of the second diffusion impervious layer fills up metal in the first through hole and the second groove, form the first the electroplates in hole copper and the second groove electro-coppering;
CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stops at the second carbon-coating on the surface.
As seen from the above technical solution, with traditional common compared with the cmp method of the ultra-low dielectric materials of traditional common, the cmp method of ultra-low dielectric materials disclosed by the invention, first by depositing described first dielectric layer (super low dielectric constant film) and deposit described second dielectric layer (super low dielectric constant film) on described first medium barrier layer on described second medium barrier layer, the silica of what described super low dielectric constant film adopted usually is porous carbon dope, process with the surface of hydrocarbon gas plasma process to super low dielectric constant film surface and described first dielectric layer and described second dielectric layer subsequently, the surface of described first dielectric layer and described second dielectric layer form respectively the first carbon-coating and second carbon-coating of the hydrophobic densification of one deck, described first carbon-coating and the second carbon-coating can not affect the dielectric constant of dielectric layer.Due to there is described first carbon-coating of the hydrophobic densification of one deck in the first dielectric layer surface, on described second dielectric layer surface, there is described second carbon-coating of the hydrophobic densification of one deck, therefore, in follow-up CMP, lapping liquid can be stoped respectively to enter in the hole of described first dielectric layer and described second dielectric layer, thus decrease the damage of CMP to super low dielectric constant film.Therefore, the double damask structure utilizing the CMP improved to process in super low dielectric constant film can keep the dielectric constant of dielectric layer constant.
Accompanying drawing explanation
Figure 1A to Fig. 1 F is the cmp method of a kind of ultra-low dielectric materials in prior art;
Fig. 2 is the method flow of the chemico-mechanical polishing of a kind of ultra-low dielectric materials of the present invention;
Fig. 3 A to Fig. 3 K is the cmp method of one embodiment of the invention ultra-low dielectric materials;
Fig. 4 A to Fig. 4 L is the cmp method of another embodiment of the present invention ultra-low dielectric materials.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
See Fig. 2, the cmp method flow process of a kind of ultra-low dielectric materials provided by the present invention is:
S100: provide a basalis, described basalis deposits first medium barrier layer, the first dielectric layer from the bottom to top successively;
S101 adopts the surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT first dielectric layer to form the first carbon-coating;
S102: adopt etch process to etch the first carbon-coating successively from top to bottom, first dielectric layer and first medium barrier layer, at the first carbon-coating, the first groove is formed in first dielectric layer and first medium barrier layer, and form the first diffusion impervious layer on the sidewall and the first carbon-coating of the first groove after, carry out metal deposition again, form the first groove electro-coppering, CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of the first carbon-coating, second medium barrier layer is deposited successively from the bottom to top again on the surface of the first carbon-coating and the first groove electro-coppering, second dielectric layer,
S103: adopt the surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT second dielectric layer to form the second carbon-coating;
S104: adopt etch process to etch the second carbon-coating, the second dielectric layer, second medium barrier layer from top to bottom successively, form the first through hole and the second groove that are connected from top to bottom;
S105: deposit the second diffusion impervious layer on the sidewall of the first through hole and the inner surface of the second groove and the second carbon-coating;
S106: till the enterprising row metal deposition of the second diffusion impervious layer fills up metal in the first through hole and the second groove, form the first the electroplates in hole copper and the second groove electro-coppering;
S107: CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of the second carbon-coating.
[embodiment one]
Below for the method flow shown in Fig. 2, by reference to the accompanying drawings 3A to 3K, a kind of integrated manufacture craft of last part technology eliminating advanced low-k materials damage is described in detail.
S100: provide a basalis, described basalis deposits first medium barrier layer, the first dielectric layer from the bottom to top successively.
See Fig. 3 A, provide a basalis 300, described basalis 300 deposits first medium barrier layer 301, first dielectric layer 302 from the bottom to top successively.
S101: the surface adopting the first dielectric layer 302 described in hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT, forms the first carbon-coating 303.
See Fig. 3 B and Fig. 3 C, adopt the surface of the first dielectric layer 302 described in hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT, form the first carbon-coating 303 of the hydrophobic densification of one deck, and the dielectric constant of dielectric layer can not be affected.Described first carbon-coating 303 has good adhesion and barrier, and therefore, described first carbon-coating 303 can prevent in subsequent CMP process owing to grinding the lubrication caused because of water or pollution attachment that cause.
Described hydrocarbon gas can be the CxHy chemical compound gas of CxHy gas or CxHy gas and other gas and vapor permeation.
The concrete technology parameter of hydrocarbon gas plasma activated chemical vapour deposition comprises: operating pressure is that 3 holders to 8 are held in the palm, and reaction temperature is 200 degrees Celsius to 400 degrees Celsius, and reacting gas is CxHy and He, and wherein, the gas flow ratio of He and CxHy is 10 to 100.
Wherein, radio-frequency power is 50 to 200 watts, and described hydrocarbon gas flow is 100 to 1000sccm.
S102: adopt etch process to etch the first carbon-coating, the first dielectric layer and first medium barrier layer from top to bottom successively, the first groove is formed in the first carbon-coating, the first dielectric layer and first medium barrier layer, and form the first diffusion impervious layer on the sidewall of the first groove after, carry out metal deposition again, form the first groove electro-coppering, CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of the first carbon-coating, then deposit second medium barrier layer, the second dielectric layer successively from the bottom to top on the surface of the first carbon-coating and the first groove electro-coppering.
First, see Fig. 3 D, etch process is adopted to etch the first carbon-coating 303, first dielectric layer 302 and first medium barrier layer 301 from the bottom to top successively, in described first carbon-coating 303, described first dielectric layer 302 and described first medium barrier layer 301, carry out the making of the first groove 3062, and adopt physical gas-phase deposition (PVD) sputtering sedimentation first diffusion impervious layer 304 on the sidewall and the first carbon-coating 303 of the first described groove 3062.
Then, see Fig. 3 E, adopt electroplating technology plated metal subsequently, form the first groove electro-coppering 3062 ', CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of described first carbon-coating 303, make the surface planarisation of the first groove electro-coppering 3062 ', and make the surface of the first groove electro-coppering 3062 ' concordant with the surface of the first carbon-coating 303.Then, second medium barrier layer 308, second dielectric layer 310 is deposited successively from the bottom to top on the surface at the first carbon-coating 303 and the first groove electro-coppering 3062 '.
S103: adopt the surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT second dielectric layer to form the second carbon-coating.
See Fig. 3 F and Fig. 3 G, adopt the surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT second dielectric layer 310, form the second carbon-coating 312 of the hydrophobic densification of one deck, the dielectric constant of dielectric layer can not be affected equally.The content such as characteristic, effect, technological parameter of described second carbon-coating 312 can see the content described by S101, and this is no longer going to repeat them.
S104: adopt etch process to etch the second carbon-coating, the second dielectric layer, second medium barrier layer from top to bottom successively, form the first through hole and the second groove that are connected from top to bottom.
See Fig. 3 H, the photoresist (not shown) of deposition pattern on the second carbon-coating 312, and with patterned photoresist for mask etches the second carbon-coating 312, second dielectric layer 310, second medium barrier layer 308 from top to bottom successively, and form the making of the first through hole 3141 and the second groove 3142 be connected completely from top to bottom, remove photoresist by cineration technics.
S105: deposit the second diffusion impervious layer on the sidewall of the first through hole and the inner surface of the second groove and the second carbon-coating.
See Fig. 3 I, the sidewall of the first through hole 3141 and the inner surface of the second groove 3142 and the second carbon-coating 312 adopt PVD sputtering sedimentation second diffusion impervious layer 316.
The deposition of described diffusion impervious layer can prevent the diffusion of metal and have good adhesion, and diffusion impervious layer described here comprises the first diffusion impervious layer 304, second diffusion impervious layer 316.
S106: till the enterprising row metal deposition of the second diffusion impervious layer fills up metal in the first through hole and the second groove, form the first the electroplates in hole copper and the second groove electro-coppering.
See Fig. 3 J, the second diffusion impervious layer 316 utilizes the technique such as plating carry out till filling deposits fill up metal 318 in the first through hole 3141 and the second groove 3142, form the first the electroplates in hole copper 3141 ' and the second groove electro-coppering 3142 '.
S107: CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of the second carbon-coating.
See Fig. 3 K, CMP (Chemical Mechanical Polishing) process is utilized to remove metal 318, second diffusion impervious layer 316 on the second carbon-coating 312 from top to bottom successively, metal 318 outside synchronous removal second groove 3142, when metal 318 is thinning and after completing interconnect metal, stop CMP, make the surface of the second carbon-coating 312 there is no unnecessary metal 318 by CMP, thus make surface smooth.Carrying out effectively clean rear another dielectric material of deposition, then start the preparation of next interconnection layer.
In through hole, metal is inlayed through above-mentioned steps, the metal in through hole can be made identical with for the material in the groove of plain conductor, reduce the problem being produced electromigration invalidation by through hole, thus the metal connecting line technique achieved between the wire of the high connductivity of copper substitution of Al material and advanced low-k materials, reduce RC time delay, improve the performance of integrated circuit.
[embodiment two]
Mention in the introduction, when using these low resistance material or advanced low-k materials in integrated circuit production technology, need the damage eliminated and come to advanced low-k materials in the technical processs such as CMP that seeks redress, but in the implementation process of reality, still there is sizable barrier, lapping liquid in CMP process can be reduced by the scheme of embodiment one to enter to the damage that super low dielectric constant film causes in the hole of dielectric layer, thus reduce the problem of the electromigration invalidation produced by through hole.But, the etch process adopted in the step S102 of embodiment one, before etching technics is formed, the photoresist (not shown) of usual needs deposition pattern on the first carbon-coating 303, and with patterned photoresist for mask etches, to make the first groove 3062 in the first carbon-coating 303, first dielectric layer 302 and first medium barrier layer 301, after defining the first groove 3062, also need to carry out cineration technics and remove patterned photoresist; Subsequently, after plated metal forms the first groove electro-coppering 3062 ' in the first groove 3062, carry out CMP, and the pollution that clean removal is caused by CMP.Because the voidage of ultralow dielectric insulating dielectric materials and phosphorus content constantly increase, structure becomes more and more loose, is easy to be utilized high-octane plasma etch process and attacks; Then, pollute at the cineration technics participated in thereafter and these described in removing and carry out clean in, the vertical sidewall surface of the surface of the dielectric material after graphical especially dielectric material there will be the loss of carbon, changes dielectric constant.Therefore, on the basis based on embodiment one, 4A to 4L by reference to the accompanying drawings, proposes the integrated manufacture craft of last part technology of a kind of better elimination advanced low-k materials damage and is described in detail.
S100: provide a basalis, described basalis deposits the first barrier layer, the first dielectric layer from the bottom to top successively.
See Fig. 4 A, provide a basalis 400, described basalis 400 deposits the first barrier layer 401, first dielectric layer 402 from the bottom to top successively.
S101: adopt the surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT first dielectric layer to form the first carbon-coating.
See Fig. 4 B and Fig. 4 C, carry out to the surface of the first dielectric layer 402 the first carbon-coating 403 that process forms the hydrophobic densification of one deck, therefore, described first carbon-coating 403 has good adhesion and barrier, and can not affect the dielectric constant of dielectric layer.
The thickness of described first carbon-coating 403 is
if lower than
in follow-up etch process and ash process, there is the risk be depleted, in follow-up technique, as the acid tank cleaning etc. after ashing, just protective effect is not played to dielectric material; If higher than
one is the risk easily producing film separation, and two is that production cost increases greatly, and thus the thickness of the first carbon-coating 403 is
for optimal selection, the selection of this thickness is that those skilled in the art are known by performing creative labour by theory analysis and experiment many times.
Preferably, the thickness of described first carbon-coating 403 exists
after follow-up etch process and cineration technics, still have enough residual thickness (to be greater than
), in follow-up CMP, dielectric material still to be shielded and production cost does not increase how many, also there is no the risk of film separation.
The technique such as hydrocarbon gas plasma activated chemical vapour deposition technique or hydrocarbon gas pyrolysis can be adopted to realize the first carbon-coating 403.Described hydrocarbon gas can be the CxHy chemical compound gas of CxHy gas or CxHy gas and other gas and vapor permeation.
The concrete technology parameter of described hydrocarbon gas plasma activated chemical vapour deposition comprises: operating pressure is that 3 holders to 8 are held in the palm, reaction temperature is 200 degrees Celsius to 400 degrees Celsius, reacting gas is CxHy and He, and wherein, the gas flow ratio of He and CxHy is 10 to 100.
Wherein, radio-frequency power is 50 to 200 watts, and described hydrocarbon gas flow is 100 to 1000sccm.
The concrete technology parameter of described hydrocarbon gas pyrolysis comprises: reaction temperature is 250 degrees Celsius to 400 degrees Celsius, and the best is 350 degrees Celsius.If lower than 250 degrees Celsius, pyrolysis speed even can not produce reaction slowly; If higher than 400 degrees Celsius, the phase transformation of nickel SiClx (NiSi) compound in device can be caused, whole device function is damaged.350 degrees Celsius of normal temperatures being current industry dielectric materials and depositing.Reaction pressure is in 30 holders to 650 holders, and the best is 350 holders, if lower than 30 holders, reaction speed causes production cost high slowly, if higher than 650 holders, the quality of film can decline, and composition can change to some extent; 350 holders, from technology controlling and process and film quality, are best.
S102: adopt etch process to etch the first carbon-coating, the first dielectric layer and first medium barrier layer from top to bottom successively, the first groove is formed in the first carbon-coating, the first dielectric layer and first medium barrier layer, and form the first diffusion impervious layer on the sidewall of the first groove after, carry out metal deposition again, form the first groove electro-coppering, CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of the first carbon-coating, then deposit second medium barrier layer, the second dielectric layer successively from the bottom to top on the surface of the first carbon-coating and the first groove electro-coppering.
First, see Fig. 4 D, the photoresist (not shown) of deposition pattern on the first carbon-coating, with patterned photoresist for mask carries out etch process, etch the first carbon-coating 403 from the bottom to top successively, first dielectric layer 402 and the first barrier layer 401, at described first carbon-coating 403, the making of the first groove 4062 is carried out in described first dielectric layer 402 and described first barrier layer 401, then, photoresist is removed by cineration technics, then the techniques such as acid tank cleans are carried out to the inner surface of the first groove exposed, and physical gas-phase deposition (PVD) sputtering sedimentation first diffusion impervious layer 404 is adopted on the sidewall and the first carbon-coating 403 of the first described groove 4062.
Because the thickness of described first carbon-coating is
and be the carbon-coating of hydrophobic densification, therefore, the impact that high-octane plasma etch process brings dielectric material effectively can be cushioned; And, the carbon coming from the first carbon-coating 403 can partly diffuse in the first dielectric layer 402, wherein, also carbon film or carbon compound film 403 ' can be formed along with certain polymerization combination reaction at patterned first dielectric layer 402 obtained after etch process at vertical sidewall surface place.Therefore; when carrying out cineration technics removal photoresist or when surperficial acid tank cleaning procedure is carried out to said structure; carbon film at the vertical sidewall surface place of the first dielectric layer 402 or carbon compound film 403 ' can be protected the first dielectric layer 402; simultaneously can also by coming from the carbon of the first carbon-coating 403 to described first dielectric layer 402; especially the loss of the carbon at the vertical sidewall surface place of the first dielectric layer 402 compensates, and prevents the appearance profile of the first dielectric layer 402 impaired.
Secondly, see Fig. 4 E, adopt electroplating technology plated metal subsequently, form the first groove electro-coppering 4062 ', CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of described first carbon-coating 403, make the surface planarisation of the first groove electro-coppering 4062 ', and make the surface of the first groove electro-coppering 4062 ' concordant with the surface of the first carbon-coating 403.
Because thickness is
the existence of the first carbon-coating 403, not only effectively can cushion the impact that high-octane plasma etch process brings the first dielectric layer 403, lapping liquid effectively can also be stoped to enter the first dielectric layer 402 when supporting CMP, in the sidewall porous of especially subsurface the first dielectric layer be close to the first diffusion impervious layer of the first carbon-coating, thus decrease the damage of CMP to super low dielectric constant film.
Then, see Fig. 4 F, deposit the second barrier layer 408, second dielectric layer 410 on the surface from the bottom to top successively at the first carbon-coating 403 and the first groove electro-coppering 4062 '.
S103: adopt the surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT second dielectric layer to form the second carbon-coating.
See Fig. 4 G and Fig. 4 H, carrying out process formation thickness to the surface of the second dielectric layer 410 is
the second carbon-coating 412 of the hydrophobic densification of one deck, the dielectric constant of dielectric layer can not be affected equally.The content such as characteristic, effect, technological parameter of described second carbon-coating 412 can see the content described by S101, and this is no longer going to repeat them.
S104: adopt etch process to etch the second carbon-coating, the second dielectric layer, second medium barrier layer from top to bottom successively, form the first through hole and the second groove that are connected from top to bottom.
See Fig. 4 I, the photoresist (not shown) of deposition pattern on the second carbon-coating 412, and with patterned photoresist for mask etches the second carbon-coating 412, second dielectric layer 410, second barrier layer 408 from top to bottom successively, and form the making of the second groove 4142 and the first through hole 4141 be connected completely from top to bottom, remove photoresist by cineration technics, then the techniques such as acid tank is clean are carried out to the inner surface of the second groove 4142 exposed and the first through hole 4141.
The loss of the carbon suffered in the processes such as etch process, cineration technics and acid tank clean is come from for avoiding described second dielectric layer 410; how the effect of described second carbon-coating 412 and carbon film or carbon compound film 412 ' are formed and the content such as how to shield can see the content described by S102, and this is no longer going to repeat them.
S105: deposit the second diffusion impervious layer on the sidewall of the first through hole and the inner surface of the second groove and the second carbon-coating.
See Fig. 4 J, the sidewall of the first through hole 4141 and the inner surface of the second groove 4142 and the second carbon-coating 412 adopt PVD sputtering sedimentation second diffusion impervious layer 416.
The deposition of described diffusion impervious layer can prevent the diffusion of metal and have good adhesion, and diffusion impervious layer described here comprises the first diffusion impervious layer 404, second diffusion impervious layer 416.
S106: till the enterprising row metal deposition of the second diffusion impervious layer fills up metal in the first through hole and the second groove, form the first the electroplates in hole copper and the second groove electro-coppering.
See Fig. 4 K, the second diffusion impervious layer 416 utilizes the technique such as plating carry out till filling deposits fill up metal 418 in the first through hole 4141 and the second groove 4142, form the first the electroplates in hole copper 4141 ' and the second groove electro-coppering 4142 '.
S107: CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of the second carbon-coating.
See Fig. 4 L, CMP (Chemical Mechanical Polishing) process is utilized to remove metal 418, second diffusion impervious layer 416 on the second carbon-coating 412 from top to bottom successively, metal 418 outside synchronous removal second groove 4142, when metal 418 is thinning and after completing interconnect metal, stop CMP, make the surface of the second carbon-coating 412 there is no unnecessary metal 418 by CMP, thus make surface smooth.Carrying out effectively clean rear another dielectric material of deposition, then start the preparation of next interconnection layer.
For avoiding described second dielectric layer 410 to come from the damage suffered in CMP process, the contents such as the effect of described second carbon-coating 412 can see the content described by S102, and this is no longer going to repeat them.
In through hole, metal is inlayed through above-mentioned steps, the metal in through hole can be made identical with for the material in the groove of plain conductor, reduce the problem being produced electromigration invalidation by through hole, thus the metal connecting line technique achieved between the wire of the high connductivity of copper substitution of Al material and advanced low-k materials, reduce RC time delay, improve the performance of integrated circuit.
As shown from the above technical solution, compared with the cmp method of the ultra-low dielectric materials of traditional common, the cmp method of ultra-low dielectric materials disclosed by the invention, first by depositing described first dielectric layer (super low dielectric constant film) and deposit described second dielectric layer (super low dielectric constant film) on described first medium barrier layer on described second medium barrier layer, the silica of what described super low dielectric constant film adopted usually is porous carbon dope, process with the surface of hydrocarbon gas plasma process to super low dielectric constant film surface and described first dielectric layer and described second dielectric layer subsequently, the surface of described first dielectric layer and described second dielectric layer form respectively the first carbon-coating and second carbon-coating of the hydrophobic densification of one deck, described first carbon-coating and the second carbon-coating can not affect the dielectric constant of dielectric layer.Due to the first dielectric layer surface exists the first carbon-coating of the hydrophobic densification of one deck, described second dielectric layer surface exists the second carbon-coating of the hydrophobic densification of one deck, the first described carbon-coating and the second affiliated carbon-coating have good adhesion and barrier, therefore, in the process of carrying out CMP, in described first dielectric layer that described first carbon-coating and described second carbon-coating can stop lapping liquid to enter porous carbon dope respectively and described second dielectric layer, simultaneously, prevent the lubrication caused because of water because grinding causes or pollute attachment, thus decrease the damage of CMP to super low dielectric constant film.Therefore, the double damask structure utilizing the CMP improved to process in super low dielectric constant film can keep the dielectric constant of dielectric layer constant.
Certainly, the cmp method of a kind of ultra-low dielectric materials disclosed by the invention includes but not limited to the structure only having 2 layers of dielectric layer (described dielectric layer comprises described first dielectric layer and described second dielectric layer), carry out the making of the 3rd dielectric layer or the even more dielectric layer of the 4th dielectric layer if also need in actual production process, also belong in the spirit and scope of the present invention.
Although the present invention with preferred embodiment openly as above; but it is not for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (7)
1. a cmp method for ultra-low dielectric materials, comprises the steps:
One basalis is provided, described basalis deposits first medium barrier layer, the first dielectric layer from the bottom to top successively;
Adopt the surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT first dielectric layer to form the first carbon-coating, the thickness of described first carbon-coating is
extremely
Etch process is adopted to etch the first carbon-coating successively from top to bottom, first dielectric layer and first medium barrier layer, at the first carbon-coating, the first groove is formed in first dielectric layer and first medium barrier layer, and on the sidewall of the first dielectric layer portions of the first groove, form carbon film or carbon compound film to protect the first dielectric layer, then after forming the first diffusion impervious layer on the sidewall of the first groove, carry out metal deposition again, form the first groove electro-coppering, CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stop on the surface of the first carbon-coating, second medium barrier layer is deposited successively from the bottom to top again on the surface of the first carbon-coating and the first groove electro-coppering, second dielectric layer,
Adopt the surface of hydrocarbon gas plasma activated chemical vapour deposition PROCESS FOR TREATMENT second dielectric layer to form the second carbon-coating, the thickness of described second carbon-coating is
extremely
Etch process is adopted to etch the second carbon-coating, the second dielectric layer, second medium barrier layer from top to bottom successively, form the first through hole and the second groove that are connected from top to bottom, and form carbon film or carbon compound film to protect the second dielectric layer on the sidewall of the second dielectric layer portions of the first through hole and on the sidewall of the second dielectric layer portions of the second groove;
The sidewall of the first through hole and the inner surface of the second groove and the second carbon-coating deposit the second diffusion impervious layer;
Till the enterprising row metal deposition of the second diffusion impervious layer fills up metal in the first through hole and the second groove, form the first the electroplates in hole copper and the second groove electro-coppering;
CMP (Chemical Mechanical Polishing) process is carried out to said structure, and stops at the second carbon-coating on the surface.
2. the cmp method of ultra-low dielectric materials according to claim 1, it is characterized in that: the operating pressure of described hydrocarbon gas plasma activated chemical vapour deposition technique is that 3 holders to 8 are held in the palm, reaction temperature is 200 degrees Celsius to 400 degrees Celsius, reacting gas is CxHy and He, wherein, the gas flow ratio of He and CxHy is 10 to 100.
3. the cmp method of ultra-low dielectric materials according to claim 1, is characterized in that: formed on the sidewall of the first groove in the step of the first diffusion impervious layer, also on the first carbon-coating, form the first diffusion impervious layer.
4. the processing method of ultra-low dielectric materials damage according to claim 1, is characterized in that: the step that the surface processing the first dielectric layer forms the first carbon-coating and the technique that the step that the surface processing the second dielectric layer forms the second carbon-coating adopts are hydrocarbon gas pyrolysis technique.
5. the processing method of ultra-low dielectric materials damage according to claim 4, is characterized in that: the operating pressure of described hydrocarbon gas pyrolysis technique is that 30 holders to 650 are held in the palm, and reaction temperature is 250 degrees Celsius to 400 degrees Celsius.
6. the cmp method of ultra-low dielectric materials according to claim 1, is characterized in that: described first diffusion impervious layer and described second diffusion impervious layer be formed by physical gas-phase deposition.
7. the cmp method of ultra-low dielectric materials according to claim 1, is characterized in that: described metal deposition adopts electroplating technology.
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