CN102592932A - Semiconductor back scattering electronic detector - Google Patents
Semiconductor back scattering electronic detector Download PDFInfo
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- CN102592932A CN102592932A CN2012100393675A CN201210039367A CN102592932A CN 102592932 A CN102592932 A CN 102592932A CN 2012100393675 A CN2012100393675 A CN 2012100393675A CN 201210039367 A CN201210039367 A CN 201210039367A CN 102592932 A CN102592932 A CN 102592932A
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Abstract
The invention relates to a semiconductor back scattering electronic detector which comprises a lining board, four rectangular silicon chips arranged on the lining board and an electron beam hole. Wires are respectively arranged in the four rectangular silicon chips and four independent units are formed. The four rectangular silicon chips are connected end to end to form a square region. The electron beam hole is positioned in the square region. The semiconductor back scattering electronic detector has simple structure, high processing efficiency, low cost and low scrappage and does not influence imaging.
Description
Technical field
The present invention relates to a kind of semiconductor backscattered electron detector, be applied to scanning electron microscopy.
Background technology
In the prior art, be accustomed to energy is higher than the primary electron that is called back scattering (being backscattered electron) of 50 electronvolt, and energy is lower than real secondary electron of being called of 50 electronvolt (being secondary electron).The detector that can receive the back scattering primary electron has Robinson's detector and semiconductor detector etc.
The backscattered electron (primary electron) that the beam bombardment sample surfaces produces is received, is transmitted by semiconductor detector.Semiconductor detector receives backscattered electron and says from the position, and wrapping angle is big, distance is near, and received energy information is maximum like this.Semiconductor detector (semiconductor backscattered electron detector abbreviation) is the first unit device of accepting the sample electronic information in the scanning electron microscopy, is that first is positioned at participation pattern imaging key element.Semiconductor detector is divided into two from form and cuts apart and four cut apart.Conventional semiconductor backscattered electron detector; Adopt four to cut apart loop configuration mostly; This four-quadrant loop configuration all is to be processed by a complete circular silicon chip; The circular silicon chip of one monoblock is divided into four unit, and the hole of a circle of processing is used for through electron beam in the middle of said circular silicon chip.On the one hand, broken especially easily during the processing circular hole because silicon chip is very fragile, cause very difficulty of the above-mentioned course of processing, complex process, rate of finished products is low; On the other hand, whole circular silicon chip is divided into four unit, the photoetching subregion part that also has difficulties.
So, need a kind of new semiconductor backscattered electron detector to address the above problem.
Summary of the invention
The objective of the invention is the deficiency that exists to prior art, provide a kind of simple in structure, with low cost, working (machining) efficiency is high, and scrappage is low and do not influence the semiconductor backscattered electron detector of imaging.
For realizing the foregoing invention purpose, semiconductor backscattered electron detector of the present invention can adopt following technical scheme:
A kind of semiconductor backscattered electron detector; Comprise liner plate, be arranged on four rectangle silicon chips and electron beam hole on the said liner plate; Be respectively arranged with lead in four rectangle silicon chips and form four independently unit; Four rectangle silicon chips are end to end to surround a square area, and said electron beam hole is positioned at said square area.
Compare with background technology, semiconductor backscattered electron detector of the present invention passes through electron detection zone of four the end to end formation of rectangle silicon chip, overcomes in the prior art the circular silicon chip of a monoblock is divided into four unit and perforation processing difficulty on said circular silicon chip; Complex process; The defective that rate of finished products is low, semiconductor backscattered electron panel detector structure of the present invention is simple, and working (machining) efficiency is high; With low cost, scrappage is low and do not influence imaging.
Among the present invention, preferred, the size shape of said four rectangle silicon chips is identical, and the long limit of said four rectangle silicon chips is greater than the length of side of said square area.This structure can guarantee the symmetry of said semiconductor backscattered electron detector, and the gap is as far as possible little between the adjacent rectangle silicon chip, can effectively utilize the liner plate space, reduces cost.
Said electron beam hole be shaped as square, four limits of said electron beam hole are parallel respectively with four limits of said square area.The square area that this structure can utilize said rectangle silicon chip to surround to greatest extent helps electronics and passes and simultaneously can increase the liner plate utilance.
Among the present invention; Preferably, said liner plate be shaped as square, said electron beam hole is shaped as square simultaneously; Four limits of said electron beam hole are parallel respectively with four limits of said square area, and four limits of said electron beam hole are parallel respectively with four limits of said liner plate.The square area that this structure can utilize said rectangle silicon chip to surround to greatest extent helps electronics and passes and simultaneously can increase the liner plate utilance.Simultaneously can improve the liner plate service efficiency of rectangle silicon chip perimeter, reduce cost.
Among the present invention, preferred, said electron beam hole is positioned at said square area middle part.This structure helps electronics and passes the high symmetry that can guarantee said detector simultaneously.
Among the present invention, preferred, said lead is positioned on the minor face of said rectangle silicon chip.This structure can effectively reduce the shared liner plate of lead space, reduces cost.
Description of drawings
Fig. 1 is a semiconductor backscattered electron detector sketch map of the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
See also shown in Figure 1, semiconductor backscattered electron detector of the present invention, a kind of semiconductor backscattered electron of this semiconductor backscattered electron detector detector comprises liner plate 1, is arranged on four rectangle silicon chips 2 on the said liner plate 1; 3,4,5 with 6, four rectangle silicon chips 2 of electron beam hole; Be respectively arranged with lead 8,9 in 3,4,5; 10,11 and form four independently unit, four rectangle silicon chips 2,3; 4,5 end to endly surround a square area 7, and said electron beam hole 6 is positioned at said square area 7.This is simple in structure, and is easy to process, with low cost, can effectively reduce scrappage and not influence imaging effect.The size shape of said four rectangle silicon chips 2,3,4,5 is identical, and the long limit of said four rectangle silicon chips 2,3,4,5 is greater than the length of side of said square area 7.This structure can guarantee the symmetry of said semiconductor backscattered electron detector, and the gap is as far as possible little between the adjacent rectangle silicon chip, can effectively utilize the liner plate space, reduces cost.Said electron beam hole 6 be shaped as square.Four limits of said electron beam hole 6 are parallel respectively with four limits of said square area 7.Said liner plate 1 be shaped as square.Four limits of said electron beam hole 6 are parallel respectively with four limits of said liner plate 1.Said electron beam hole 6 is positioned at said square area 7 middle parts.Said lead 8,9,10,11 lays respectively on the minor face of said rectangle silicon chip 2,3,4,5.The more effective raising liner plate utilance of above-mentioned improvement ability reduces cost, and improves symmetry.
As stated; Semiconductor backscattered electron detector of the present invention adopts a liner plate and is arranged on four rectangle silicon chips on the said liner plate; Be respectively arranged with lead on four rectangle silicon chips and form four independently unit, four rectangle silicon chips are end to end to surround a square area.This is simple in structure, and convenient processing does not influence imaging when reducing detector cost and scrappage.
Claims (9)
1. a semiconductor backscattered electron detector is characterized in that: comprise liner plate (1), be arranged on four rectangle silicon chips (2,3,4,5) and electron beam hole (6) on the said liner plate (1); Be respectively arranged with lead (8 in four rectangle silicon chips (2,3,4,5); 9,10,11) and form four independently unit, four rectangle silicon chips (2; 3,4,5) the end to end square area (7) that surrounds, said electron beam hole (6) is positioned at said square area (7).
2. semiconductor backscattered electron detector as claimed in claim 1 is characterized in that, said four rectangle silicon chips (2,3; 4,5) size shape is identical, and said four rectangle silicon chips (2; 3,4,5) long limit is greater than the length of side of said square area (7).
3. semiconductor backscattered electron detector as claimed in claim 2 is characterized in that, said electron beam hole (6) be shaped as square.
4. semiconductor backscattered electron detector as claimed in claim 3 is characterized in that, four limits of said electron beam hole (6) are parallel respectively with four limits of said square area (7).
5. semiconductor backscattered electron detector as claimed in claim 4 is characterized in that, said liner plate (1) be shaped as square.
6. semiconductor backscattered electron detector as claimed in claim 5 is characterized in that, four limits of said electron beam hole (6) are parallel respectively with four limits of said liner plate (1).
7. like each described semiconductor backscattered electron detector of claim 1-6, it is characterized in that said electron beam hole (6) is positioned at said square area (7) middle part.
8. like each described semiconductor backscattered electron detector of claim 1-6, it is characterized in that said lead (8,9,10,11) is positioned on the minor face of said rectangle silicon chip (2,3,4,5).
9. semiconductor backscattered electron detector as claimed in claim 7 is characterized in that, said lead (8,9,10,11) is positioned on the minor face of said rectangle silicon chip (2,3,4,5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100393675A CN102592932A (en) | 2012-02-21 | 2012-02-21 | Semiconductor back scattering electronic detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100393675A CN102592932A (en) | 2012-02-21 | 2012-02-21 | Semiconductor back scattering electronic detector |
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| CN102592932A true CN102592932A (en) | 2012-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012100393675A Pending CN102592932A (en) | 2012-02-21 | 2012-02-21 | Semiconductor back scattering electronic detector |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030062478A1 (en) * | 2001-09-04 | 2003-04-03 | Jurgen Frosien | Particle beam apparatus |
| CN101929965A (en) * | 2008-09-04 | 2010-12-29 | 汉民微测科技股份有限公司 | Charged Particle Detection Device |
| CN102072913A (en) * | 2009-08-07 | 2011-05-25 | 卡尔蔡司Nts有限责任公司 | Inspection method, particle beam system and manufacturing method |
| US20120025074A1 (en) * | 2010-07-30 | 2012-02-02 | Pulsetor, Llc | Electron detector including an intimately-coupled scintillator-photomultiplier combination, and electron microscope and x-ray detector employing same |
| CN202434463U (en) * | 2012-02-21 | 2012-09-12 | 南京特能电子有限公司 | Semiconductor backscattered electron detector |
-
2012
- 2012-02-21 CN CN2012100393675A patent/CN102592932A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030062478A1 (en) * | 2001-09-04 | 2003-04-03 | Jurgen Frosien | Particle beam apparatus |
| CN101929965A (en) * | 2008-09-04 | 2010-12-29 | 汉民微测科技股份有限公司 | Charged Particle Detection Device |
| CN102072913A (en) * | 2009-08-07 | 2011-05-25 | 卡尔蔡司Nts有限责任公司 | Inspection method, particle beam system and manufacturing method |
| US20120025074A1 (en) * | 2010-07-30 | 2012-02-02 | Pulsetor, Llc | Electron detector including an intimately-coupled scintillator-photomultiplier combination, and electron microscope and x-ray detector employing same |
| CN202434463U (en) * | 2012-02-21 | 2012-09-12 | 南京特能电子有限公司 | Semiconductor backscattered electron detector |
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Application publication date: 20120718 |