CN102445803A - Picture element structure - Google Patents
Picture element structure Download PDFInfo
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- CN102445803A CN102445803A CN201210001715XA CN201210001715A CN102445803A CN 102445803 A CN102445803 A CN 102445803A CN 201210001715X A CN201210001715X A CN 201210001715XA CN 201210001715 A CN201210001715 A CN 201210001715A CN 102445803 A CN102445803 A CN 102445803A
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- Prior art keywords
- film transistor
- edge
- tft
- element structure
- thin film
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- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims description 44
- 239000003990 capacitor Substances 0.000 claims description 36
- 238000009413 insulation Methods 0.000 claims description 36
- 230000012447 hatching Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention relates to a picture element structure which comprises a substrate, a shading conductive pattern, a first insulating layer, a film transistor and a picture element electrode, wherein the shading conductive pattern is located on the substrate; the substrate and the shading conductive pattern are covered by the first insulating layer; the first insulating layer is located between the film transistor and the substrate; the film transistor is provided with a channel; the channel of the film transistor is completely shaded by the shading conductive pattern; and the picture element electrode is electrically connected to the film transistor.
Description
Technical field
The invention relates to a kind of image element structure, and particularly relevant for a kind of image element structure that improves light electric leakage problem.
Background technology
Therefore advantages such as that flat-panel screens has is frivolous, power saving, low radiation have become the main flow in the display industry.Flat-panel screens comprises LCD and organic electro-luminescent display, and wherein LCD has advantage cheaply, therefore is used at large in each electronic product.
Generally speaking, the LCD backlight module that comprises display panels and the display panels light source is provided.Display panels has the active component array base board of a plurality of image element structures, with respect to the subtend substrate and the liquid crystal layer between active component array base board and subtend substrate of active component array base board.Image element structure comprises thin film transistor (TFT) and the pixel electrode that electrically connects with thin film transistor (TFT).The light that backlight module provided passes display panels, but and then makes LCD display frame.Yet in known technology, the passage of thin film transistor (TFT) possibly shone by the light that backlight module provides, and makes thin film transistor (TFT) generation light electric leakage problem, and then influences the display quality of display panels.
Summary of the invention
In view of this, the present invention provides a kind of image element structure, and it can improve the light electric leakage problem of thin film transistor (TFT).
The present invention provides a kind of image element structure, comprises substrate, shading conductive pattern, first insulation course, thin film transistor (TFT) and pixel electrode.The shading conductive pattern is positioned on the substrate.The first insulation course covered substrate and shading conductive pattern.First insulation course is between thin film transistor (TFT) and substrate.Thin film transistor (TFT) has passage.The passage of thin film transistor (TFT) is fully covered by the shading conductive pattern.Pixel electrode and thin film transistor (TFT) electrically connect.
In one embodiment of this invention, above-mentioned image element structure more comprises: with the sweep trace that thin film transistor (TFT) electrically connects, wherein shading conductive pattern and sweep trace are overlapping.
In one embodiment of this invention, above-mentioned sweep trace has first edge and second edge that is cut out by first perforation.First edge and second edge and shading conductive pattern are overlapping in fact, and first edge sees through the shading conductive pattern and second edge electrically connects.
In one embodiment of this invention, above-mentioned image element structure more comprises: the storage capacitors pattern overlapping with pixel electrode, wherein shading conductive pattern and storage capacitors pattern overlapping.
In one embodiment of this invention, above-mentioned storage capacitors pattern has the 3rd edge and the 4th edge that is cut out by second perforation.The 3rd edge and the 4th edge and shading conductive pattern are overlapping in fact, and the 3rd edge sees through the shading conductive pattern and the 4th edge electrically connects.
In one embodiment of this invention, above-mentioned thin film transistor (TFT) has more source electrode, drain and gate.Source electrode and drain lay respectively at the relative both sides of channel layer and overlapping with channel layer.Drain and pixel electrode electrically connect.Gate and source electrode, drain and channel layer are overlapping.
In one embodiment of this invention, above-mentioned image element structure more comprises: the data line that electrically connects with source electrode, staggered and sweep trace that electrically connect with gate and the storage capacitors pattern overlapping with pixel electrode with data line.
In one embodiment of this invention, above-mentioned gate, sweep trace and storage capacitors pattern belong to same rete.
In one embodiment of this invention, above-mentioned image element structure more comprises: second insulation course.Second insulation course covers gate, sweep trace, storage capacitors pattern and substrate, and between channel layer and gate.
In one embodiment of this invention, above-mentioned image element structure more comprises: the 3rd insulation course.The 3rd insulation course cover film transistor and substrate.The 3rd insulation course has opening.This opening exposes drain of film transistor.Pixel electrode is inserted this opening and is contacted with drain of film transistor.
Based on above-mentioned, in image element structure of the present invention, the transistorized passage of shading conductive pattern complete shielding film capable of using, and can reduce the probability that the passage of thin film transistor (TFT) is arrived by irradiate light.Thus, the light of thin film transistor (TFT) electric leakage problem just can be improved in the known technology.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
Description of drawings
Figure 1A is the schematic top plan view of the image element structure of one embodiment of the invention.
Figure 1B is the sectional view that the hatching line A-A ' of corresponding Figure 1A is painted.
Fig. 2 A is the situation that broken string takes place the sweep trace of the image element structure of Figure 1A.
The sectional view that Fig. 2 B is painted for the hatching line B-B ' along Fig. 2 A.
Fig. 3 A is the situation that broken string takes place the storage capacitors pattern of the image element structure of Figure 1A.
The sectional view that Fig. 3 B is painted for the hatching line C-C ' along Fig. 3 A.
Among the figure: 100 image element structures, 110 substrates, 120 shading conductive patterns, 130 first insulation courses, 140 storage capacitors patterns, 150 second insulation courses, 160 the 3rd insulation courses, 160a opening, 170 conductive materials, CH passage, D drain, DL data line, E1 ~ E4 edge; The G gate, H1, H2 perforation, L laser, PE pixel electrode, S source electrode, SL sweep trace, T thin film transistor (TFT).
Embodiment
Figure 1A is the schematic top plan view of the image element structure of one embodiment of the invention.Figure 1B is the sectional view that the hatching line A-A ' of corresponding Figure 1A is painted.Please be simultaneously with reference to Figure 1A and Figure 1B, the pixel electrode PE that the image element structure 100 of present embodiment comprises substrate 110, is positioned at first insulation course 130 (being plotted in Figure 1B) of shading conductive pattern 120, covered substrate 110 and shading conductive pattern 120 on the substrate 110, is positioned at the thin film transistor (TFT) T on first insulation course 130 and electrically connects with thin film transistor (TFT) T.First insulation course 130 is between thin film transistor (TFT) T and substrate 110.
In detail, the thin film transistor (TFT) T of present embodiment has source S, drain D, gate G and channel C H.Source S and drain D lay respectively at the relative both sides of channel C H and overlapping with channel C H.Drain D and pixel electrode PE electrically connect.In the present embodiment, first insulation course 130 is between gate G and shading conductive pattern 120.Channel C H is positioned at the top of gate G.Source S and drain D are positioned at the top of channel C H.In other words, the thin film transistor (TFT) T of present embodiment can be end gate (Bottom gate) thin film transistor (TFT).Yet, the invention is not restricted to this, in other were implemented, thin film transistor (TFT) T also can be the thin film transistor (TFT) of top gate (Top gate) or other appropriate formats.
The image element structure 100 of present embodiment can further comprise data line DL, sweep trace SL and storage capacitors pattern 140.The source S of data line DL and thin film transistor (TFT) T electrically connects.Sweep trace SL and the data line DL that interlocks, and electrically connect with the gate G of thin film transistor (TFT) T.In the present embodiment, gate G can be the some of sweep trace SL, and source S can be the outward extending ㄧ of sweep trace SL branch.The storage capacitors pattern 140 of present embodiment can be overlapping with pixel electrode PE, and form storage capacitors with pixel electrode PE.
In the present embodiment, gate G, sweep trace SL and storage capacitors pattern 140 can belong to same rete.In other words, the material of gate G, sweep trace SL and storage capacitors pattern 140 can be identical.In the present embodiment, gate G, sweep trace SL, data line DL and storage capacitors pattern 140 generally are to use metal material.Yet; The invention is not restricted to this; According to other embodiment; Gate G, sweep trace SL, data line DL and storage capacitors pattern 140 also can use other conductive materials, for example the stack layer of the oxides of nitrogen of the oxide of the nitride of alloy, metal material, metal material, metal material or metal material and other conductive material.
The image element structure 100 of present embodiment can further comprise second insulation course 150 (being plotted in Figure 1B).Second insulation course 150 covers gate G, sweep trace SL, storage capacitors pattern 140 and substrate 110, and can be between channel C H and gate G.In addition, the image element structure 100 of present embodiment more comprises the 3rd insulation course 160.The 3rd insulation course 160 cover film transistor Ts and substrate 110.Say that further the source S of thin film transistor (TFT) T and drain D can be between the 3rd insulation course 160 and channel C H.The 3rd insulation course 160 has opening 160a.Opening 160a exposes the drain D of thin film transistor (TFT) T.Pixel electrode PE inserts opening 160a and contacts with the drain D of thin film transistor (TFT) T.In the present embodiment, the material of first insulation course 130, second insulation course 150, the 3rd insulation course 160 can be identical or different.The material of first insulation course 130, second insulation course 150, the 3rd insulation course 160 (for example: the stack layer of monox, silicon nitride, silicon oxynitride or above-mentioned at least two kinds of materials), organic material or above-mentioned combination can be inorganic material.
It should be noted that in the present embodiment the channel C H of thin film transistor (TFT) T is fully covered by shading conductive pattern 120.Therefore, the channel C H of thin film transistor (TFT) T is not vulnerable to the irradiation of ambient light line, and reduced thin film transistor (TFT) T the probability that light leaks electricity takes place.Thus, the bad problem of demonstration that causes because of the electric leakage of thin film transistor (TFT) T light described in the known technology just can be improved.
The shading conductive pattern 120 of present embodiment more can use as patch cord (repair line) except having the effect of improving thin film transistor (TFT) T light electric leakage problem.When image element structure 100 defectiveness produced, shading conductive pattern 120 can be repaired this fault location, but and made the still normal operation of image element structure 100 after the repairing.Following figure formula illustrates.
Fig. 2 A is the situation that broken string takes place the sweep trace of the image element structure of Figure 1A.The sectional view that Fig. 2 B is painted for the hatching line B-B ' along Fig. 2 A.Please with reference to Fig. 2 A and Fig. 2 B, the shading conductive pattern 120 of present embodiment is except overlapping with channel C H, and is optionally more overlapping with sweep trace SL.When sweep trace SL is run through by the first perforation H1 (when broken string takes place sweep trace SL).Sweep trace SL has the first edge E1 and the second edge E2 that is cut out by the first perforation H1, and the first edge E1 and the second edge E2 can be overlapping in fact with shading conductive pattern 120.So, shown in Fig. 2 B,, but and then make still normal operation of impaired image element structure 100 just fabricator laser L capable of using makes the first edge E1 see through shading conductive pattern 120 and second edge E2 electric connection.
In detail, in the present embodiment, can utilize laser L that first insulation course 130 is punched earlier, and first insulation course 130 is exposed and the first edge E1 and the adjacent part shading conductive pattern 120 of the second edge E2.Then, utilize a conductive material 170 (for example tungsten) that the first edge E1 and the second edge E2 are electrically connected with shading conductive pattern 120 respectively again.Thus, the first edge E1 that is separated by the first perforation H1 and the second edge E2 just can see through shading conductive pattern 120 and electrically connect, and make still transmitting signals successfully of sweep trace SL, but and then make still normal operation of image element structure 100.
Yet, the invention is not restricted to two sections said, the shading conductive pattern 120 of present embodiment also can be used for repairing storage capacitors pattern 140.Following figure 3A, Fig. 3 B explanation.Fig. 3 A is the situation that broken string takes place the storage capacitors pattern of the image element structure of Figure 1A.The sectional view that Fig. 3 B is painted for the hatching line C-C ' along Fig. 3 A.Please with reference to Fig. 3 A and Fig. 3 B, the shading conductive pattern 120 of present embodiment is except overlapping with channel C H, and is optionally more overlapping with storage capacitors pattern 140.When storage capacitors pattern 140 is run through by the second perforation H2 (when broken string takes place storage capacitors pattern 140).Storage capacitors pattern 140 has the 3rd edge E3 and the 4th edge E4 that is cut out by the second perforation H2.The 3rd edge E3 and the 4th edge E4 can be overlapping in fact with shading conductive pattern 120.So, laser L capable of using makes the 3rd edge E3 see through shading conductive pattern 120 and the 4th edge E4 electrically connects, and repairs the broken string zone of storage capacitors pattern 140, and then impaired image element structure 100 still can normally be used.
Similarly, in the present embodiment, the fabricator can utilize laser L that first insulation course 130 is punched earlier, and makes first insulation course 130 expose the shading conductive pattern 120 of the part adjacent with the 3rd edge E3 and the 4th edge E4.Then, utilize a conductive material 170 (for example tungsten) that the 3rd edge E3 and the 4th edge E4 are electrically connected with shading conductive pattern 120 respectively again.Thus, the 3rd edge E3 that is separated by the second perforation H2 and the 4th edge E4 just can see through shading conductive pattern 120 and electrically connect, and make still transmitting signals successfully of storage capacitors pattern 140, but and then make still normal operation of image element structure 100.
In addition, what need explanation is, if during the problem that storage capacitors pattern 140 and sweep trace SL all break, shading conductive pattern 120 can be simultaneously in order to repair storage capacitors pattern 140 and sweep trace SL.In detail, the fabricator earlier available laser shading conductive pattern 120 is cut into respectively two shadings conduction sub patterns (not illustrating) overlapping with storage capacitors pattern 140 and sweep trace SL and that be electrically insulated each other.Then, utilize corresponding shading conduction sub patterns to repair storage capacitors pattern 140 and sweep trace SL more respectively.
What need explanation is that the image element structure 100 of present embodiment can be in order to form an active component array base board.Have the active component array base board of image element structure 100 can be further and subtend substrate and the display medium between active component array base board and subtend substrate form a display panel.What deserves to be mentioned is that in the present embodiment, the shading conductive pattern 120 of image element structure 100 can fully be covered by the light shield layer of subtend substrate.In other words, the shading conductive pattern 120 of present embodiment can't influence the transmittance (transmittance) of display panel when improving light electric leakage problem.
In sum, improve the problem of thin film transistor (TFT) light electric leakage in the known technology at the image element structure of one embodiment of the invention shading conductive pattern that covers passage fully capable of using.In addition, also can both be overlapping with sweep trace, storage capacitors pattern or its at the shading conductive pattern of the image element structure of one embodiment of the invention.Thus, when both broke problem when sweep trace, storage capacitors pattern or its, the shading conductive pattern just can be used as patch cord and uses, and then the image element structure that the broken string problem takes place still can normally be used after repairing.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (10)
1. an image element structure is characterized in that, comprising:
One substrate;
One shading conductive pattern is positioned on this substrate;
One first insulation course covers this substrate and this shading conductive pattern;
One thin film transistor (TFT), this first insulation course is between this thin film transistor (TFT) and this substrate, and wherein this thin film transistor (TFT) has a channel layer, and this channel layer of this thin film transistor (TFT) is fully covered by this shading conductive pattern; And
One pixel electrode electrically connects with this thin film transistor (TFT).
2. image element structure according to claim 1 is characterized in that, more comprises: with the one scan line that this thin film transistor (TFT) electrically connects, wherein this shading conductive pattern and this sweep trace are overlapping.
3. image element structure according to claim 2; It is characterized in that; This sweep trace has one first edge and one second edge that is cut out by one first perforation; This first edge and this second edge and this shading conductive pattern are overlapping in fact, and this first edge sees through this shading conductive pattern and this second edge electrically connects.
4. image element structure according to claim 1 is characterized in that, more comprises: a storage capacitors pattern overlapping with this pixel electrode, wherein this shading conductive pattern and this storage capacitors pattern overlapping.
5. image element structure according to claim 4; It is characterized in that; This storage capacitors pattern has one the 3rd edge and one the 4th edge that is cut out by one second perforation; The 3rd edge and the 4th edge and this shading conductive pattern are overlapping in fact, and the 3rd edge sees through this shading conductive pattern and the 4th edge electrically connects.
6. image element structure according to claim 1 is characterized in that, this thin film transistor (TFT) has more:
An one source pole and a drain lay respectively at the relative both sides of this channel layer and overlapping with this channel layer, and this drain and this pixel electrode electrically connect; And
One gate, overlapping with this source electrode, this drain and this channel layer.
7. image element structure according to claim 6 is characterized in that, more comprises:
One data line electrically connects with this source electrode;
The one scan line, staggered and electrically connect with this gate with this data line:
One storage capacitors pattern, overlapping with this pixel electrode.
8. image element structure according to claim 7 is characterized in that, this gate, this sweep trace and this storage capacitors pattern belong to same rete.
9. image element structure according to claim 8 is characterized in that, more comprises: one second insulation course, cover this gate, this sweep trace, this storage capacitors pattern and this substrate, and between this channel layer and this gate.
10. image element structure according to claim 9; It is characterized in that; More comprise: one the 3rd insulation course, cover this thin film transistor (TFT) and this substrate, the 3rd insulation course has an opening; This opening exposes this drain of this thin film transistor (TFT), and this pixel electrode is inserted this opening and contacted with this drain of this thin film transistor (TFT).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210001715XA CN102445803A (en) | 2012-01-05 | 2012-01-05 | Picture element structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210001715XA CN102445803A (en) | 2012-01-05 | 2012-01-05 | Picture element structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102445803A true CN102445803A (en) | 2012-05-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210001715XA Pending CN102445803A (en) | 2012-01-05 | 2012-01-05 | Picture element structure |
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| Country | Link |
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| CN (1) | CN102445803A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7626675B2 (en) * | 2006-04-20 | 2009-12-01 | Chungwa Picture Tubes, Ltd. | Color filter substrate and liquid crystal display panel with spacer having a recess or clipping opening in which an active device is wedged therein |
| CN101598872A (en) * | 2008-06-04 | 2009-12-09 | 群康科技(深圳)有限公司 | Display panels |
| CN101893797A (en) * | 2010-07-01 | 2010-11-24 | 友达光电股份有限公司 | Pixel structure and its manufacturing method |
-
2012
- 2012-01-05 CN CN201210001715XA patent/CN102445803A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7626675B2 (en) * | 2006-04-20 | 2009-12-01 | Chungwa Picture Tubes, Ltd. | Color filter substrate and liquid crystal display panel with spacer having a recess or clipping opening in which an active device is wedged therein |
| CN101598872A (en) * | 2008-06-04 | 2009-12-09 | 群康科技(深圳)有限公司 | Display panels |
| CN101893797A (en) * | 2010-07-01 | 2010-11-24 | 友达光电股份有限公司 | Pixel structure and its manufacturing method |
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Application publication date: 20120509 |