CN102299265A - Illuminating device of organic light-emitting diode and heat radiation encapsulation layer thereof, and preparation methods thereof - Google Patents

Abstract

The invention discloses an organic light emitting diode lighting device, a heat dissipation encapsulation layer and a preparation method thereof. The prepared organic light emitting diode illumination device is packaged and dissipated with a heat dissipation encapsulation layer, and is characterized in that the heat dissipation encapsulation layer is made of a material with high thermal conductivity. The inorganic insulating layer and the thermally conductive metal layer are alternately and periodically overlapped, and the number of periods is n, 1≤n≤10. The heat dissipation encapsulation layer prepared by the encapsulation method can not only form a dense sealing layer, but also effectively improve the heat dissipation performance of the light-emitting device, and at the same time solve the problem that the device is sensitive to water and oxygen, which is beneficial to improving the performance of the device and prolonging the life of the device.

Description

Organic light-emitting diode lighting device, heat dissipation encapsulation layer and preparation method thereof

technical field

The invention relates to the field of optoelectronic technology, in particular to a heat dissipation encapsulation layer of an organic light emitting diode lighting device and a preparation method. the

Background technique

Organic Light Emitting Diode (OLED) is considered to be the most ideal third-generation display technology after Liquid Crystal Display (LCD). Since 1987, it has gradually developed and matured after more than 20 years, and has been widely used in various fields such as flat panel display, lighting, and display backlight, and has also created a huge growing market. the

The organic material of OLED is very sensitive to the external environment. The water and oxygen in the atmospheric environment will seriously deteriorate the material, so that the performance of the unpackaged device will be reduced sharply after being placed in the atmospheric environment, or even completely lost. performance. In order to prolong the life of the device and improve the stability of the device, the device must be packaged. A common practice is to cover the entire light-emitting part including the electrodes with glass. However, in this case, in order to avoid the contact between the OLED device and the glass, a gap must be left, and the heat is difficult to conduct away, and the main part of the heat conduction is the front surface glass part. Because glass is a material that is not easy to conduct heat, it is easy to overheat after concentrated electricity, which will damage the device. It will increase the difficulty of manufacturing high-brightness and high-efficiency devices. At the same time, this also limits the application of OLEDs in large-area sizes. Even It is a thin film packaging technology, and it is also not conducive to heat dissipation because the organic matter used for sealing is a poor conductor of heat. Based on the above situation, which packaging material and packaging method to use has become an urgent problem to be solved. the

Contents of the invention

The invention aims at the heat dissipation problem existing in the existing OLED glass packaging, and proposes a heat dissipation encapsulation layer structure of an organic light-emitting diode lighting device. The invention not only avoids the contact of the OLED material with water and oxygen, but also solves the problem of heat dissipation caused by the OLED device. The problem of device damage caused by poor performance can effectively enhance the life of the device, improve the stability of the device, reduce the cost, and simplify the process. the

To achieve the above object, the present invention adopts the following technical solutions:

A heat dissipation encapsulation layer of an organic light emitting diode lighting device, characterized in that the heat dissipation encapsulation layer is composed of an inorganic insulating layer (21) with high thermal conductivity and a heat conduction metal layer (22) alternately and periodically overlapped.

The material of the inorganic insulating layer (21) with high thermal conductivity includes one of diamond-like carbon, aluminum nitride, boron nitride, silicon nitride, aluminum oxide or magnesium oxide, and the heat-conducting metal layer (22 ) materials include one of silver, copper, gold or aluminum. the

The inorganic insulating layer (21) and the heat-conducting metal layer (22) are alternately and periodically overlapped, and the number of periods is n, where 1≤n≤10. the

The thickness of the inorganic insulating layer (21) is 50-500 nm, and the thickness of the heat-conducting metal (22) is 50-500 nm. the

An organic light emitting diode lighting device, comprising an organic light emitting diode (1), a heat dissipation encapsulation layer, the organic light emitting diode (1) is composed of a substrate (11), an anode layer (12), an organic power layer (13), a metal cathode layer ( 14) Sequential stacking, characterized in that: the heat dissipation packaging layer (2) is composed of inorganic insulating layer (21) materials and heat conducting metal layers (22) alternately and periodically overlapping. the

A method for preparing an organic light-emitting diode lighting device, comprising the following steps:

① Prepare the organic layers of the organic light-emitting diode in sequence, and then prepare the metal cathode;

② On the metal cathode layer (14) prepared above, prepare an inorganic insulating layer (21) and a thermally conductive metal layer (22) in sequence, wherein the thickness of the inorganic insulating layer (21) is 50-500 nm, and the thermally conductive metal layer ( 22) has a thickness of 50-500 nm, and the number of alternating overlapping cycles of the inorganic insulating layer (21) and the heat-conducting metal layer (22) is n, 1≤n≤10;

③ Test the life of the packaged device and other parameters.

The inorganic encapsulation layer (21) and heat-conducting metal layer (22) can be vacuum evaporation, magnetron sputtering, ion plating, direct current sputtering coating, radio frequency sputtering coating, ion beam sputtering coating, ion beam assisted Deposition, plasma-enhanced chemical vapor deposition, high-density inductively coupled plasma source chemical vapor deposition, ion beam deposition, metal-organic chemical vapor deposition, catalytic chemical vapor deposition, laser pulse deposition, pulsed plasma method, pulsed laser method, electron beam evaporation, sol-gel method, inkjet printing, and electroplating in one or more ways. the

Beneficial effects of the present invention:

1. The heat-dissipating encapsulation layer of the present invention adopts an inorganic insulating material with high thermal conductivity and a heat-conducting metal alternately and periodically overlapping to form a structure, which not only avoids the contact of OLED materials with water and oxygen, but also solves the problem of OLED devices being damaged due to poor heat dissipation performance. problems, effectively enhance device life, improve device stability, while reducing costs and simplifying the process.

2. By adopting various preferred ratios and process parameters provided in the present invention, better device performance can be obtained. the

Description of drawings

Fig. 1 is a schematic diagram of the packaging structure of organic light emitting diode devices in Examples 1 to 14 provided by the present invention;

Fig. 2 is the performance comparison of the life of devices prepared by adopting heat dissipation encapsulation layer in embodiments 1, 5, 7, 9, 11 and 13;

Wherein, 1 is an organic light emitting diode device, wherein, 11 is a substrate, 12 is an anode layer, 13 is an organic functional layer, 14 is a metal cathode layer, and 2 is a heat dissipation encapsulation layer of the present invention. The numbers n are alternately and periodically overlapped, 21 is an inorganic insulating layer, and 22 is a heat-conducting metal.

specific implementation plan

The present invention will be further described below in conjunction with the accompanying drawings and embodiments. the

The substrate 11 described in the present invention is the support of the electrode and the organic thin film layer. It has good light transmission performance in the visible light region, has a certain ability to prevent water vapor and oxygen penetration, and has a good surface smoothness. It can be Glass or flexible substrate, the flexible substrate is made of polyester, polyimide compound or thinner metal. the

The anode layer 12 of the organic light emitting diode described in the present invention is used as the connection layer for the forward voltage of the organic light emitting diode, and it requires good electrical conductivity, visible light transparency and high work function. Inorganic metal oxides (such as indium tin oxide (ITO), zinc oxide ZnO, etc.), organic conductive polymers (such as PEDOT:PSS, PANI, etc.) or high work function metal materials (such as gold, copper, etc.) are usually used. silver, platinum, etc.). the

The metal cathode layer 14 of the organic light-emitting diode described in the present invention is used as the connecting layer of the negative voltage of the device, and it is required to have better electrical conductivity and lower work function, and the metal cathode layer is usually a low work function metal material lithium, Metals with low work functions such as magnesium, calcium, strontium, aluminum, indium, or their alloys with copper, gold, and silver; or a very thin buffer insulating layer (such as LiF, MgF ₂ , etc.) and the aforementioned metal or alloy.

The inorganic insulating layer material 21 with high thermal conductivity of the OLED in the present invention includes one of diamond-like carbon, aluminum nitride, boron nitride, silicon nitride, aluminum oxide or magnesium oxide. the

The thermal conductivity of diamond-like carbon (DLC) in the present invention is about six times that of copper, and the diamond-like carbon film is an amorphous carbon film whose performance is very similar to that of diamond film but often contains a large number of SP ³ and SP ² hybrid bonds. Compared with diamond films, diamond-like films have many excellent properties, including high hardness, low coefficient of friction, high wear resistance, high elastic modulus, and good chemical stability, thermal conductivity, electrical insulation, light transmission and biological properties. compatibility. At the same time, the preparation environment of the diamond-like film is mild, does not require high temperature, and does not require harsh conditions for the preparation of diamond films such as corrosive working gases, and is easy to be doped during the preparation process. However, the preparation of high-performance diamond-like carbon films is hindered by the large internal stress. Doping a certain amount of metal in the diamond-like carbon film can effectively reduce the internal stress of the film and enhance the toughness of the film, thereby effectively improving the bonding strength and wear life of the film. The metal elements doped can be divided into two categories: one is metal elements that can form strong chemical bonds with carbon, such as Ti, Mo, and W, and the other is metal elements that form weak chemical bonds with carbon, such as Al, Cu, etc. , Au and Ag etc.

The thermal conductivity of aluminum nitride (AlN) in the present invention is about 270 W/mK. Aluminum nitride is a covalent crystal with a hexagonal wurtzite structure. Pure AlN is blue-white, usually gray or off-white. There are many excellent properties, such as high thermal conductivity, low expansion coefficient, high electrical insulation properties, high dielectric breakdown strength, excellent mechanical strength and chemical stability, low toxicity, good optical properties, etc. There are many methods for preparing AlN thin films, and the more mature methods mainly include chemical vapor deposition, plasma-assisted chemical vapor deposition, laser chemical vapor deposition, metal organic compound chemical vapor deposition, reactive molecular beam epitaxy, and pulsed laser deposition. , ion implantation and magnetron reactive sputtering, among which chemical vapor deposition and magnetron reactive sputtering are more widely used. The AlN film prepared by chemical vapor deposition has the characteristics of high purity and compactness, and it is easy to form crystals with good crystal orientation. The main disadvantage is that it needs to react at high temperature, the substrate temperature is high, and the deposition rate is low, so it is not suitable for preparing OLED as an insulating and heat-conducting layer. The magnetron reactive sputtering method combines the advantages of magnetron sputtering and reactive sputtering, has the characteristics of low temperature and high speed, and can prepare AlN thin films with small internal stress and dense structure. Magnetron sputtering is divided into two methods: direct current and radio frequency. The DC magnetron reactive sputtering method uses a DC power supply as the magnetron sputtering power supply, so that the atoms sputtered from the target and the gas O ₂ or N ₂ (generally Ar gas as an ion source) passed into the vacuum chamber etc., react to form compounds such as oxides and nitrides. In this way, various oxides, nitrides, etc. can be prepared. The difference between RF reactive magnetron sputtering and DC magnetron reactive sputtering is that the magnetron sputtering power supply is AC power supply. When preparing the AlN thin film, the metal aluminum is used as the target, and a certain amount of nitrogen is filled as the reaction gas. The research shows that with the increase of the nitrogen gas flow rate, the sputtering target surface transitions from a metallic state to a nitrided state, and the deposition rate decreases significantly; the deposition rate increases almost linearly with the increase of the RF power, and increases with the target base distance. As the sputtering pressure increases, the deposition rate increases continuously, but after reaching the maximum value at a certain pressure, it decreases with the increase of the gas pressure.

The thermal conductivity of boron nitride (BN) described in the present invention is 100-250 W/mK, and boron nitride is a double compound composed of the same number of nitrogen atoms and boron atoms. Boron nitride and carbon are isoelectronic, and like carbon, boron nitride is polymorphic, with 5 isomers, namely hexagonal boron nitride, wurtzite boron nitride, trigonal boron nitride, cubic Boron nitride and orthorhombic boron nitride. Cubic boron nitride is extremely hard, although still less hard than diamond and other similar substances. Like diamond, cubic boron nitride is an insulator but an excellent conductor of heat. The structure is similar to the boron nitride form of diamond, also called cubic boron nitride. Cubic boron nitride has high heat transfer due to phonons. In contact with oxygen at high temperatures, boron nitride forms a passivating layer of boron oxide. Boron nitride bonds well to metals due to the formation of alternating layers of boron or nitrogen alloys. Cubic boron nitride crystal material is often used in the cutting head of cutting tools. Sintered cubic boron nitride is a non-conductive heat sink material, so it has potential applications in the field of microelectronics. the

The thermal conductivity of silicon nitride (SiN) described in the present invention is about 50 W/mK, and silicon nitride is a functional material with excellent performance, which has good dielectric properties (low dielectric constant, low loss), Highly insulating and dense silicon nitride has a good barrier ability to impurity ions, even a small volume of Na ⁺ . Therefore, silicon nitride is widely used in semiconductor device technology as an efficient device surface passivation layer. At present, the chemical vapor deposition methods used to prepare silicon nitride films mainly include plasma-enhanced chemical vapor deposition, low-pressure chemical vapor deposition, radio frequency plasma-enhanced chemical vapor deposition, photochemical vapor deposition, and so on. Plasma-enhanced chemical vapor deposition is currently an ideal and important method for preparing silicon nitride thin films. It has the advantages of low deposition temperature, small pinholes, good uniformity, and good step coverage.

The thermal conductivity of aluminum oxide (Al ₂ O ₃ ) in the present invention is 25-40 W/mK, and the Al ₂ O ₃ thin film has good dielectric properties, optical properties, mechanical properties and high temperature thermal stability, and is An important inorganic functional ceramic material. There are many methods for preparing Al ₂ O ₃ thin films, such as anodic oxidation, sol-gel method, chemical vapor deposition and magnetron sputtering. DC magnetron reactive sputtering can use high-purity aluminum target and high-purity O ₂ reaction gas to prepare high-purity Al ₂ O ₃ thin films, avoiding the tedious preparation of high-purity Al ₂ O ₃ compound targets and complex and expensive radio frequency magnetic Controlled sputtering equipment; easy control of film components; fast film forming speed, low temperature; no environmental pollution and other advantages, so it has been widely used.

The thermal conductivity of magnesium oxide (MgO) described in the present invention is 25~50 W/mK, and magnesium oxide is an insulating solid inorganic material with a sodium chloride crystal structure, showing good chemical inertia, electrical insulation, and optical transparency , high temperature stability and high thermal conductivity, it is an excellent buffer layer material. Since magnesium oxide is very close to the key properties of the common semiconductor substrate material Si, electrode material Pt, and the lattice constant of ferroelectric and superconducting materials, people introduce magnesium oxide thin films as buffer layers on semiconductors (mainly Si and GaAs) Produced high-quality ferroelectric or superconducting thin films. Magnesium oxide film is also an important dielectric protection material. MgO films have been widely used as protective films in plasma displays (PDPs) because of their good sputtering resistance and high secondary electron emission coefficient. At present, the commonly used methods for preparing MgO thin films include electron beam evaporation, laser pulse deposition, sputtering, metal-organic chemical vapor deposition, and sol-gel methods. The present invention selects ion beam assisted deposition (IAD) to prepare MgO thin film. the

The thermal conductivity metal 22 of the machine light-emitting diode in the present invention includes one of silver, copper, gold or aluminum, wherein the thermal conductivity of silver is 429 W/mK, the thermal conductivity of copper is 401 W/mK, and the thermal conductivity of gold is 401 W/mK. The coefficient is 317 W/mK, and the thermal conductivity of aluminum is 237 W/mK. the

The following are specific embodiments of the present invention:

Example 1

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is Mg:Ag alloy, the inorganic insulating layer 21 is diamond-like carbon, the thickness is 500 nm, and the heat-conducting metal layer 22 is Al, the thickness is 50 nm, and the period number n is 1.

The preparation method is as follows:

① Complete the preparation of the anode, organic functional layer and cathode in the OLED device structure;

② Vacuum magnetic filtration technology is used to apply a low-frequency periodic negative bias to the substrate, and a very smooth amorphous diamond film is deposited on the substrate at room temperature. The film is ideally combined with the substrate. This technical method has the following characteristics: the deposited particles are highly ionized ions, the deposited film is dense and smooth, with strong adhesion and ideal substrate bonding. In the magnetic filter plasma equipment for preparing amorphous diamond film, high-purity graphite is used as the cathode, the basic vacuum of the vacuum chamber is about 10 ^-3 Pa, the arc current is 70 A, the arc voltage is 20 V; the filter magnetic field current is 20 A, which can generate 40 mT magnetic field. Use 99.999% high-purity argon as the working gas, and the gas flow rate is controlled at 1.5 sccm. The substrate is an OLED device that has completed the metal cathode process, the periodic bias voltage is (0, -50 V), the deposition time is 20 min, and the substrate distance is 30 cm. The thickness of the DLC film prepared by this method is 500 nm, the surface is dense and smooth, and the surface roughness is less than 1 nm;

③ A layer of dense Al metal layer with high thermal conductivity is prepared by magnetron sputtering on the diamond-like film, which forms a sealing layer together with the diamond-like film to block the damage of water and oxygen to the OLED device, and at the same time increase the composite sealing layer toughness;

④ Due to the high hardness and high wear resistance of the diamond-like film, in order to protect the metal layer prepared in step 3, another layer of diamond-like film can be prepared on the metal layer. In order to enhance the sealing effect, steps 3 and 4 can be repeated many times to form a multi-layer composite film structure sealing layer;

⑤ Test the life of the device and its various parameters.

Example 2

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is a Mg:Ag alloy, the inorganic insulating layer 21 is diamond-like carbon, the thickness is 50 nm, and the heat-conducting metal layer 22 It is Cu, the thickness is 50 nm, and the number of periods n is 10.

The preparation method is similar to Example 1. the

Example 3

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (indium tin oxide (ITO), the metal cathode layer 14 is a Mg:Ag alloy, and the inorganic insulating layer 21 is diamond-like carbon with a thickness of 100 nm. The thermally conductive metal layer 22 is Au, the thickness is 100 nm, and the period number n is 3.

The preparation method is similar to Example 1. the

Example 4

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is a Mg:Ag alloy, the inorganic insulating layer 21 is diamond-like carbon, the thickness is 50 nm, and the heat-conducting metal layer 22 It is Ag, the thickness is 80 nm, and the period number n is 5.

The preparation method is similar to Example 1. the

Example 5

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is a Mg:Ag alloy, the inorganic insulating layer 21 is aluminum nitride, and the thickness is 100 nm. 22 is Al, the thickness is 500 nm, and the period number n is 2.

The preparation method is as follows:

① Complete the preparation of the anode, organic functional layer and cathode in the OLED device structure;

② A thin film of aluminum nitride is grown on the cathode of the OLED device by radio frequency reactive magnetron sputtering. The vacuum in the working chamber is 3×10 ^-4 Pa, the sputtering target is 99.99% Al target, the working gas is 99.99% Ar and 99.99% N ₂ , and the partial pressure ratio of Ar and N ₂ is always maintained during the experiment. 24:4, the target-to-substrate distance is 7.0 cm, the substrate temperature is 20 ℃ (room temperature), the power is 40 W, and the sputtering time is 45 min. Before reactive sputtering to deposit thin films, the target was pre-sputtered with a power of 30 W for 15 min to remove impurities such as oxides on the surface of the Al target.

③ On the aluminum nitride film, a dense Al metal layer with high thermal conductivity is prepared by magnetron sputtering, which forms a sealing layer together with the aluminum nitride film to prevent water and oxygen from invading the OLED device, and at the same time increase the Toughness of the composite sealant;

④ In order to enhance the sealing effect, steps 3 and 4 can be repeated many times to form a multi-layer composite film structure sealing layer;

⑤ Test the life of the device and its various parameters.

Example 6

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is a Mg:Ag alloy, the inorganic insulating layer 21 is aluminum nitride, and the thickness is 100 nm. 22 is Ag, the thickness is 100 nm, and the period number n is 6.

The preparation method is similar to Example 5. the

Example 7

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is Mg:Ag alloy, the inorganic insulating layer 21 is boron nitride, the thickness is 200 nm, and the heat-conducting metal layer 22 is Au, the thickness is 300 nm, and the period number n is 2.

The preparation method is as follows:

① Complete the preparation of the anode, organic functional layer and cathode in the OLED device structure;

② Using radio frequency magnetron sputtering method, the target material is hot-pressed hexagonal boron nitride (purity greater than 99.9%) with a diameter of 60 mm and a thickness of 1 mm, the base distance of the target is 3 cm, and the working gas is argon and nitrogen (purity is 99.999%) of the mixed gas. Before sputtering, the target was pre-sputtered for 5 minutes, and the background vacuum was less than 3×10 ^-4 Pa. The power is 200 W, the bias voltage is -150 V, the concentration of nitrogen is 10%, the gas pressure is 0.4 Pa, and the substrate temperature is room temperature.

③ On the boron nitride film, a layer of dense Au metal layer with high thermal conductivity is prepared by magnetron sputtering, which forms a sealing layer with the boron nitride film to block the damage of water and oxygen to the OLED device, and at the same time increase the Toughness of the composite sealant;

④ In order to enhance the sealing effect, steps 3 and 4 can be repeated many times to form a multi-layer composite film structure sealing layer;

⑤ Test the life of the device and its various parameters.

Example 8

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is Mg:Ag alloy, the inorganic insulating layer 21 is boron nitride with a thickness of 80 nm, and the heat-conducting metal layer 22 is Cu, the thickness is 120 nm, and the period number n is 6.

The preparation method is similar to Example 7. the

Example 9

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is Mg:Ag alloy, the inorganic insulating layer 21 is silicon nitride, and the thickness is 100 nm. 22 is Au, the thickness is 50 nm, and the period number n is 5.

The preparation method is as follows:

① Complete the preparation of the anode, organic functional layer and cathode in the OLED device structure;

② Preparation of silicon nitride film by PECVD: RF source frequency 0.1 MHz, RF power 200 W, working pressure 200 Pa, using SiH ₄ -NH ₃ (Ar) gas system, gas flow ratio R[SiH ₄ (ml/min)/ NH ₃ (ml/min)]=1/10, adjust the flow of SiH ₄ , NH ₃ and protective gas Ar according to the working pressure. The deposition temperature was room temperature, the deposition rate was 2.0 nm/min, and the duration was 100 min.

③ On the silicon nitride film, a layer of dense Au metal layer with high thermal conductivity is prepared by magnetron sputtering, which forms a sealing layer with the silicon nitride film to block the damage of water and oxygen to the OLED device, and at the same time increase the Toughness of the composite sealant;

④ In order to enhance the sealing effect, steps 3 and 4 can be repeated many times to form a multi-layer composite film structure sealing layer;

⑤ Test the life of the device and its various parameters.

Example 10

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is a Mg:Ag alloy, the inorganic insulating layer 21 is silicon nitride, and the thickness is 150 nm. 22 is Ag, the thickness is 350 nm, and the period number n is 2.

The preparation method is similar to Example 10. the

Example 11

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is a Mg:Ag alloy, the inorganic insulating layer 21 is magnesium oxide, the thickness is 200 nm, and the heat-conducting metal layer 22 It is Ag, the thickness is 100 nm, and the period number n is 1.

The preparation method is as follows:

① Complete the preparation of the anode, organic functional layer and cathode in the OLED device structure;

② Preparation of MgO thin film by ion beam assisted deposition: During the process of depositing the thin film, oxygen is not passed through, and the vacuum degree is kept on the order of 10 ^-4 Pa. The magnesium oxide block with a purity of 99.9% is used as the evaporation material. While evaporating, the film surface is bombarded with argon ions. The incident angle of the ion beam is 45 degrees to the normal of the substrate plane. The substrate temperature is 30 °C and the deposition rate is 5 nm/min, the thickness of the deposited film is 200 nm.

③ On the magnesium oxide film, a dense Ag metal layer with high thermal conductivity is prepared by magnetron sputtering, which forms a sealing layer with magnesium oxide to prevent water and oxygen from invading OLED devices, and at the same time, a composite sealing layer can be added toughness;

④ In order to enhance the sealing effect, steps 3 and 4 can be repeated many times to form a multi-layer composite film structure sealing layer;

⑤ Test the life of the device and its various parameters.

Example 12

As shown in Figure 1, 1 is an organic light emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is Mg:Ag alloy, the inorganic insulating layer 21 is magnesium oxide, the thickness is 160 nm, and the heat conducting metal layer 22 It is Ag, the thickness is 140 nm, and the period number n is 2.

The preparation method is similar to Example 11. the

Example 13

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is Mg:Ag alloy, the inorganic insulating layer 21 is aluminum oxide, the thickness is 200 nm, and the heat-conducting metal Layer 22 is Al with a thickness of 300 nm and a period number n of 1.

The preparation method is as follows:

① Complete the preparation of the anode, organic functional layer and cathode in the OLED device structure;

② DC magnetron reactive sputtering is used: aluminum with a purity of 99.99% is used as the target, the base distance of the target is 6 cm, the sputtering gas is argon (99.999%), and the reaction gas is oxygen (99.999%). The vacuum degree was maintained at 1×10 ^-5 Pa, the sputtering pressure was 1.0 Pa, and the Al target was pre-sputtered in Ar atmosphere for 5 min to remove surface pollutants. The Ar gas flow rate was 20 sccm, the oxygen flow rate was 5 sccm, the substrate temperature was room temperature, the sputtering power was 230 W, and the sputtering time was 60 min.

③ Prepare a dense Al metal layer with high thermal conductivity by magnetron sputtering on the aluminum oxide film, and form a sealing layer with aluminum oxide to prevent water and oxygen from invading the OLED device, and at the same time, it can Increase the toughness of the composite sealing layer;

④ In order to enhance the sealing effect, steps 3 and 4 can be repeated many times to form a multi-layer composite film structure sealing layer;

⑤ Test the life of the device and its various parameters.

Example 14

As shown in Figure 1, 1 is an organic light-emitting diode, the anode layer 12 is indium tin oxide (ITO), the metal cathode layer 14 is Mg:Ag alloy, the inorganic insulating layer 21 is aluminum oxide, the thickness is 100 nm, and the heat-conducting metal Layer 22 is Ag with a thickness of 100 nm and a period number n of 3.

The preparation method is similar to Example 13. the

Claims (8)

1. A heat dissipation encapsulation layer of an organic light-emitting diode lighting device, characterized in that the heat dissipation encapsulation layer (2) is composed of an inorganic insulating layer (21) with high thermal conductivity and a heat conduction metal layer (22) alternately and periodically overlapped. 2. The heat dissipation packaging layer of an organic light emitting diode according to claim 1, characterized in that: the material of the inorganic insulating layer (21) with high thermal conductivity is diamond-like carbon, aluminum nitride, boron nitride, nitride silicon, aluminum oxide or magnesium oxide, and the material of the thermally conductive metal (22) is silver, copper, gold or aluminum. 3 . The heat dissipation encapsulation layer of an organic light emitting diode according to claim 1 , characterized in that: the number of alternating periods between the inorganic insulating layer ( 21 ) and the heat-conducting metal layer ( 22 ) is n, where 1≤n≤10. 4. The heat dissipation encapsulation layer of an organic light emitting diode according to claim 1, characterized in that: the thickness of the inorganic insulating layer (21) is 50-500 nm, and the thickness of the heat-conducting metal layer (22) is 50-500 nm . 5. An organic light emitting diode lighting device prepared by using the heat dissipation encapsulation layer according to any one of claims 1-4. 6. A method for preparing a heat-dissipating encapsulation layer according to any one of claims 1-4, characterized in that: the inorganic encapsulation layer (21) and the heat-conducting metal layer (22) are formed by vacuum evaporation and magnetron sputtering , Ion Plating, DC Sputtering Coating, RF Sputtering Coating, Ion Beam Sputtering Coating, Ion Beam Assisted Deposition, Plasma Enhanced Chemical Vapor Deposition, High Density Inductively Coupled Plasma Source Chemical Vapor Deposition, Ion Beam Deposition, Metal Organic One or more of chemical vapor deposition, catalytic chemical vapor deposition, laser pulse deposition, pulse plasma, pulse laser, electron beam evaporation, sol-gel method, inkjet printing, electroplating on the metal cathode layer (14) of the organic light emitting diode. 7. The method for preparing the heat dissipation encapsulation layer of an organic light emitting diode lighting device according to claim 6, characterized in that: on the metal cathode layer (14) of the organic light emitting diode, an inorganic insulating layer (21) and a thermally conductive metal layer are sequentially prepared (22), wherein, the thickness of the inorganic insulating layer (21) is 50-500 nm, the thickness of the heat-conducting metal layer (22) is 50-500 nm, and the inorganic insulating layer (21) and the heat-conducting metal layer (22) alternate The number of overlapping cycles is n, 1≤n≤10. 8. A method for preparing the organic light-emitting diode lighting device according to claim 5, characterized in that: the inorganic encapsulation layer (21) and the heat-conducting metal layer (22) adopt vacuum evaporation, magnetron sputtering, ion Plating, DC sputtering coating, RF sputtering coating, ion beam sputtering coating, ion beam assisted deposition, plasma enhanced chemical vapor deposition, high density inductively coupled plasma source chemical vapor deposition, ion beam deposition, metal organic chemical vapor deposition Deposition method, catalytic chemical vapor deposition, laser pulse deposition method, pulse plasma method, pulse laser method, electron beam evaporation, sol-gel method, inkjet printing, electroplating in one or more ways to form organic light-emitting On the metal cathode layer (14) of the diode, the steps are as follows: Prepare the organic layers of the organic light-emitting diode in sequence, and then prepare the metal cathode; On the metal cathode layer (14) prepared above, an inorganic insulating layer (21) and a thermally conductive metal layer (22) are sequentially prepared, wherein the thickness of the inorganic insulating layer (21) is 50-500 nm, and the thermally conductive metal layer (22) has a thickness of 50-500 nm, and the number of alternating overlapping cycles of the inorganic insulating layer (21) and the heat-conducting metal layer (22) is n, 1≤n≤10; Test the life of the packaged device and other parameters.

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