CN1019031B - 制取硅单晶的设备 - Google Patents
制取硅单晶的设备Info
- Publication number
- CN1019031B CN1019031B CN89109188A CN89109188A CN1019031B CN 1019031 B CN1019031 B CN 1019031B CN 89109188 A CN89109188 A CN 89109188A CN 89109188 A CN89109188 A CN 89109188A CN 1019031 B CN1019031 B CN 1019031B
- Authority
- CN
- China
- Prior art keywords
- partition member
- silica glass
- single crystal
- silicon
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
一种硅单晶的制取设备,其中一个在其下部形成有至少一个贯穿小孔的分离构件设置在一个旋转石英坩锅内使之包围住一个旋转拉出的大圆柱形硅单晶。分隔构件的全部或一部分由泡沫石英玻璃制成。这种泡沫石英玻璃的气泡含量(体积百分比)在0.01%与15%之间,或者是小于0.01%、但通过用于熔化硅原料的热提高到0.01%至15%。因此,防止跟分隔构件内侧接触的熔融物料降低温度,并防止熔融物料在此部位上凝固。
Description
本发明涉及用丘克拉尔斯基(Czochralski)法制取硅单晶的设备。
用丘克拉尔斯基法拉制的硅单晶工艺过去一直在使用,并且该工艺已成为一种几乎是完整的技术。然而,在规格要求严格的场合,由于掺杂物和氧分布不均,可用晶片的合格率将降低到50%以下。
作为解决上述问题的有效手段,已有一种公知方法,在其中硅原料被连续馈入双层结构的坩锅中以保持熔融物料表面水平恒定(特开昭40-10184)。特别是高质粒状多晶硅的制取近来已成为可能,并且将这种粒状硅以恒定的馈料速率馈入熔融物料中已被认为是比较容易的,从而导致了一些发明和一篇论文的发表(特开昭58-130195和昭63-95195,及公开的实用新型昭59-141578,以及一篇载在Ann.Rev.Mater,Sci,1987,17卷,第273-278页的论文)。
公开在这些出版物中的发明都属使用双层结构石英玻璃坩锅的类型,并且,特别是在特开昭62-241889中指出的,在内坩锅的内表面与熔融硅表面接触的部分会出现凝固的问题,因而难以将炉温降低到单晶稳定生长所需要的温度。如果将熔融硅保持在高的温度下进行单晶的拉制以防止发生凝固,那么就会不仅降低凝固速率,而且还会频繁地引起位错的发生,从而使稳定地制取单晶成为不可能。此外,在特开昭61-36197中所公开的发明,使用双层结构的坩锅,并且还使用了配置在外层物料熔融部分上方的隔热材料以及配置在坩锅底部的单独的加热器,以促进所供入原料的熔融。然而,这项发明还是没有包括防止热从内坩锅的内
表面与熔融硅表面相接触的部分散发以防止发生凝固的措施。此外,使用在坩锅底部的加热器加热降低沿坩锅侧面配置的其它加热器的温度,因而促进了凝固的发生。
在使用分隔构件或内坩锅(下称分隔构件)的上述类型的制取方法中,特别是在制取12-30厘米的大直径硅单晶的方法中,从分隔构件内侧的散热将会降低在分隔构件内部的熔融物料的温度,特别是降低与分隔构件接触的熔融物料的温度。这被认为是由以下事实引起的:分隔构件的材料是透明的石英玻璃,它具有显著大于熔融硅的热辐射系数,大量的热从分隔构件向坩锅上方的水冷盖套逸散。再者,由于坩锅是双层结构,熔融硅的热对流受到限制,分隔构件内侧的温度的升高趋势较小。
此外,尽管在分隔构件内部(晶体生长部分)的熔融硅的温度必须刚好保持在硅的熔点以上以保证单晶的生长,但由于上述现象,还是存在有在分隔构件与分隔构件内侧的熔融物料的表面接触的部分开始的凝固问题。
然而,上述现有技术并没有提供任何防止这种凝固发生的方法。
本发明正是为了克服现有技术中的上述缺陷,本发明的目的是提供一套用于制取硅单晶、更具体说是制取直径为12-30厘米的大圆柱形硅单晶的设备,在该设备中,粒状或块状的原料被连续馈入盛装熔融物料的坩锅内,并且该设备能够防止在浸入坩锅内的分隔构件与分隔构件内侧的熔融物料的表面接触的部分发生凝固。
本发明为了解决上述问题和达到上述目的,提供了一套改进的硅单晶制取设备,其中盛装熔融硅物料的旋转坩锅被其上形成有至少一个贯穿小孔的分隔构件以这样的方式分开,使分隔构件包围着旋转拉出的、直径为12-30厘米的大圆柱形硅单晶,并且,在硅原料连续地馈送到分隔构件外侧的同时,熔融硅料通过孔平稳地移动,硅单晶在分隔构件内部生长。该设备具有以下基本特征:
分隔构件的全部或一部分由泡沫石英玻璃制成,或者分隔构件的与熔融硅料接触的部分由泡沫石英玻璃制成,而其余部分由透明石英玻璃制成。
分隔构件的泡沫石英玻璃部分由气泡含量(体积百分比)不小于0.01%和不大于15%的泡沫石英玻璃制成。或者是,分隔构件的泡沫石英玻璃部分由气泡含量(体积百分比)小于0.01%的泡沫石英玻璃制成、并通过用于熔化初始装入坩锅内的硅原料的热量使气泡含量增加到不小于0.01%和不大于15%。
本发明将结合附图通过实施例进行详细描述。在附图中,
图1是示意地示出本发明的一个实施例的纵向剖视图;
图2是沿图1的Ⅰ-Ⅰ线截取的剖视图;
图3是示出分隔构件的一个实施例的侧视图;
图4a和图4b是示出分隔构件的其它实施例的示意图;
图5a和图5b是用于比较透明石英玻璃和泡沫石英玻璃的工作的示意图。
在附图中:
标号1表示坩锅,2-石墨坩锅,3-支座,4-熔融硅料,5-硅单晶,6-加热器,7-隔热材料,8-壳体,9-开口,11-分隔构件,12-气泡,13-小孔,14-馈料器,15和16-测温计,17-隔热罩,18-馈入的原料。
首先描述构成本发明主要部分的分隔构件的基本结构。参看图5,示出了分别示出透明石英玻璃21a和泡沫石英玻璃11a浸入熔融物料内的状态的示意图。在图5a所示出的透明石英玻璃21a的情况中,可看出熔融物料4与玻璃21a接触的部分是透明的,因而从熔融物料表面通过玻璃的散热量增大了。此外,透明石英玻璃21a的散热量如此之大,以致于与玻璃21a接触的熔融物料4的部分的温度降低了,并且在这部
分会发生凝固。
反之,在泡沫石英玻璃11a的情况中,玻璃中存在的气泡12具有散射从熔融物料4与泡沫石英玻璃11a接触的部分散逸的热量的作用,因而与透明石英玻璃21a相比较,从熔融物料表面通过玻璃11a散逸的热量减小了。此外,由于热传导造成的冷却因气泡的存在而减小了。其结果是,熔融物料4的与泡沫石英玻璃11a接触的部位的温度几乎没有降低,因而防止了熔融物料4出现凝固。而且,因为从熔融物料4通过玻璃的散热由于泡沫石英玻璃11a的这一第二作用而减小,对与泡沫石英玻璃11a接触的熔融物料4的部分具有减小温度变化和浸润性变化的效果。
图1是示意地示出本发明的一个实施例的剖视图,图2是沿图1中的Ⅰ-Ⅰ线截取的剖视图。在附图中,标号1表示在石墨坩锅2中的石英坩锅装置,并且石墨坩锅2可垂直移动并可旋转地支承在支座3上。标号4表示装在坩锅1中的熔融硅料,并且一个生长成直径为12-30厘米的大圆柱形的硅单晶5从熔融硅料4拉出。标号6表示环绕着石墨坩锅2的加热器,标号7表示环绕着加热器6的热区隔热材料。这些组成部分与按照丘克拉尔斯基单晶拉制法的普通的单晶拉制设备的组成部分基本相同。
标号11表示由泡沫高纯度石英玻璃制成并与坩锅1同心配置的分隔构件,有至少一个小的贯穿孔形成在大致在它的高度方向的中心部位以下的区域内,如图3所例示。当装入原料时,分隔构件11随原料一起放置在坩锅1内定位,因而分隔构件在原料熔融后浸入在熔融物料4中环绕着单晶5,并且分隔构件的上部露出熔融物料表面。而且,分隔构件的下缘部位实际上与坩锅1熔合,从而防止了隔板浮动。结果是,在分隔构件11外侧的熔融物料4只能通过小孔13移动到分隔构件内侧。应当理解分隔构件11可以予先熔合到坩锅1上。
标号9表示一个形成在壳体8上对应于分隔构件11外侧的熔融物料表面部位的开口,有一个馈料器14固定地嵌入开口9内,用于馈入粒状或块状原料。馈料器14的前端对着分隔构件11外侧的熔融物料表面。馈料器14连接到配置在壳体8外面的原料馈料室(未示出)上,从而连续地馈送粒状或块状原料。
标号15和16表示设置在壳体8的上部的、诸如辐射温度计的测温计,测温计15测量分隔构件11外侧的熔融物料表面的温度,而另一个测温计16测量内侧的熔融物料的温度。
标号17表示隔热罩,在此实施例中是设计来进一步加强分隔构件11的隔热作用,尽管泡沫石英玻璃分隔构件11本身具有防止发生凝固的功能。
按照本发明,由于分隔构件11是由泡沫石英玻璃制成的,从分隔构件11的内表面与熔融硅料4接触的部分散逸的热量减小了,从而防止了熔融物料4在分隔构件11上凝固。这样的通过泡沫石英玻璃防止熔融物料凝固的效能通常是由0.01%或以上的气泡含量(体积百分比)产生的。在泡沫石英玻璃具有的气泡含量(体积百分比)小于0.01%的情况下,如果通过由熔化硅物料的热量而产生新的气泡、或者如果由于已存在的气泡膨胀使气泡含量(体积百分比)增加到大于0.01%,则同样可获得防止熔融物料凝固的效能。
另一方面,在泡沫石英玻璃中的气泡含量大于15%的情况下,由于玻璃的剥离,阻碍单晶生长的可能性将极度增长。
由这些结果看来,硅单晶的生长是通过使用具有优选的气泡含量为0.01-15%(体积百分比)的泡沫石英玻璃而实现的。
将泡沫石英玻璃仅仅设在熔融物料4与分隔构件11接触的部位,就能保证分隔构件11的由上述的泡沫石英玻璃所产生的防止熔融物料凝固的效能。例如,如图4a所示的实施例的由从底部延伸到熔融物料表面
上面大约1厘米的泡沫石英玻璃构成的类型的分隔构件11,以及另一种如图4b所示的、仅仅是延伸在熔融物料表面上下大约1厘米的部分由泡沫石英玻璃构成、而其余部分由透明石英玻璃构成的类型的分隔构件,都具有防止凝固的效能。
由以上的描述可以看出,按照本发明的硅单晶制取设备,其中盛装熔融硅料的旋转坩锅被一个其上形成有至少一个贯穿的小孔的分隔构件以这样的方式分开,使分隔构件包围着旋转拉出的、直径为12-30厘米的大圆柱形硅单晶,并且,在硅原料连续地馈送到分隔构件外侧的同时,熔融硅料可平稳地移动,硅单晶在分隔构件内部生长,分隔构件的全部或一部分由泡沫石英玻璃制成,使从靠近分隔构件的熔融物料逸散的热量减小了,并且防止了熔融物料在与分隔构件接触的部位发生凝固,从而拉出完好的硅单晶。因此,本发明的工作有巨大的效果,由于在硅单晶拉制方向上质量均匀而改进了产量,生产率也获得改进,等等。
Claims (3)
1、一种制取硅单晶的设备,其中盛装熔融硅料的旋转石英坩锅被其上形成有至少一个贯穿小孔的分隔构件以这样的方式分开,使旋转拉出的、直径为12-30厘米的大圆柱形硅单晶被该分隔构件包围着,并且,在硅原料连续地馈送到所述分隔构件的外侧的同时,所述熔融物料可以平稳地移动,所述硅单晶在所述分隔构件内部生长,其改进之处在于所述分隔构件的全部或一部分由泡沫石英玻璃制成,所述分隔构件的泡沫石英玻璃部分由气泡含量(体积百分比)不小于0.01%和不大于15%的泡沫石英玻璃制成。
2、按权利要求1所述的设备,其特征在于所述分隔构件的与所述熔融硅料相接触的部分由泡沫石英玻璃制成,其余部分由透明石英玻璃制成。
3、按权利要求1或2所述的设备,其特征在于所述分隔构件的泡沫石英玻璃部分由气泡含量(体积百分比)小于0.01%的泡沫石英玻璃制成,并且通过用于熔化初始装入所述坩锅内的硅原料的热量使所述气泡含量(体积百分比)增加到不小于0.01%和不大于15%。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP284017/88 | 1988-11-11 | ||
| JP63284017A JPH0676274B2 (ja) | 1988-11-11 | 1988-11-11 | シリコン単結晶の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1042954A CN1042954A (zh) | 1990-06-13 |
| CN1019031B true CN1019031B (zh) | 1992-11-11 |
Family
ID=17673220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN89109188A Expired CN1019031B (zh) | 1988-11-11 | 1989-11-11 | 制取硅单晶的设备 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5009863A (zh) |
| EP (1) | EP0368586B1 (zh) |
| JP (1) | JPH0676274B2 (zh) |
| KR (1) | KR920009565B1 (zh) |
| CN (1) | CN1019031B (zh) |
| DE (1) | DE68913429D1 (zh) |
| FI (1) | FI895158A7 (zh) |
| MY (1) | MY104476A (zh) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH035392A (ja) * | 1989-05-30 | 1991-01-11 | Nkk Corp | シリコン単結晶の製造装置 |
| US5139750A (en) * | 1989-10-16 | 1992-08-18 | Nkk Corporation | Silicon single crystal manufacturing apparatus |
| US5312600A (en) * | 1990-03-20 | 1994-05-17 | Toshiba Ceramics Co. | Silicon single crystal manufacturing apparatus |
| JP2670548B2 (ja) * | 1990-04-27 | 1997-10-29 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
| JPH0825836B2 (ja) * | 1990-04-27 | 1996-03-13 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
| US5314667A (en) * | 1991-03-04 | 1994-05-24 | Lim John C | Method and apparatus for single crystal silicon production |
| JPH04317493A (ja) * | 1991-04-15 | 1992-11-09 | Nkk Corp | シリコン単結晶の製造装置 |
| DE4123336A1 (de) * | 1991-07-15 | 1993-01-21 | Leybold Ag | Kristallziehverfahren und vorrichtung zu seiner durchfuehrung |
| JPH0585879A (ja) * | 1991-09-04 | 1993-04-06 | Mitsubishi Materials Corp | 単結晶引上装置 |
| US5363795A (en) * | 1991-09-04 | 1994-11-15 | Kawasaki Steel Corporation | Czochralski crystal pulling process and an apparatus for carrying out the same |
| US5284631A (en) * | 1992-01-03 | 1994-02-08 | Nkk Corporation | Crucible for manufacturing single crystals |
| JP2506525B2 (ja) * | 1992-01-30 | 1996-06-12 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
| JP3478406B2 (ja) * | 1992-09-09 | 2003-12-15 | アルベマール・コーポレーシヨン | 粒状物質の供給装置 |
| JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
| JPH0859386A (ja) * | 1994-08-22 | 1996-03-05 | Mitsubishi Materials Corp | 半導体単結晶育成装置 |
| JP3769800B2 (ja) * | 1996-01-12 | 2006-04-26 | 株式会社Sumco | 単結晶引上装置 |
| JP3533416B2 (ja) * | 1996-02-06 | 2004-05-31 | 三菱住友シリコン株式会社 | 単結晶引上装置 |
| US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
| US7959732B1 (en) * | 2005-06-17 | 2011-06-14 | Saint-Gobain Ceramics & Plastics, Inc. | Apparatus and method for monitoring and controlling crystal growth |
| US8262797B1 (en) | 2007-03-13 | 2012-09-11 | Solaicx, Inc. | Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process |
| CN104685113A (zh) * | 2012-09-10 | 2015-06-03 | Gtatip控股有限责任公司 | 连续cz方法和设备 |
| US20140144371A1 (en) * | 2012-11-29 | 2014-05-29 | Solaicx, Inc. | Heat Shield For Improved Continuous Czochralski Process |
| CN105887185A (zh) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | 一种多重提拉单晶硅的制造方法 |
| KR102486897B1 (ko) * | 2018-03-30 | 2023-01-09 | 엘에스일렉트릭(주) | Plc 시스템 |
| CN111041551B (zh) * | 2020-01-06 | 2021-02-05 | 北京北方华创真空技术有限公司 | 直拉硅单晶炉 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE962868C (de) * | 1953-04-09 | 1957-04-25 | Standard Elektrik Ag | Tiegel zum Herstellen reinsten Halbleitermaterials, insbesondere von Silizium und dessen Verwendung |
| US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
| US4015048A (en) * | 1975-03-03 | 1977-03-29 | Corning Glass Works | Ceramic articles having cordierite coatings |
| US4010064A (en) * | 1975-05-27 | 1977-03-01 | International Business Machines Corporation | Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel |
| US4042361A (en) * | 1976-04-26 | 1977-08-16 | Corning Glass Works | Method of densifying metal oxides |
| US4200445A (en) * | 1977-04-28 | 1980-04-29 | Corning Glass Works | Method of densifying metal oxides |
| US4238274A (en) * | 1978-07-17 | 1980-12-09 | Western Electric Company, Inc. | Method for avoiding undesirable deposits in crystal growing operations |
| DE2928089C3 (de) * | 1979-07-12 | 1982-03-04 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung |
| US4911896A (en) * | 1986-07-24 | 1990-03-27 | General Electric Company | Fused quartz member for use in semiconductor manufacture |
| JPS63177988A (ja) * | 1987-01-20 | 1988-07-22 | Toyo Seikan Kaisha Ltd | レ−ザ−溶接缶製造方法 |
| US4919901A (en) * | 1987-12-31 | 1990-04-24 | Westinghouse Electric Corp. | Barrier design for crucibles for silicon dendritic web growth |
| JPH0280392A (ja) * | 1988-09-16 | 1990-03-20 | Osaka Titanium Co Ltd | 単結晶製造装置 |
-
1988
- 1988-11-11 JP JP63284017A patent/JPH0676274B2/ja not_active Expired - Lifetime
-
1989
- 1989-10-31 FI FI895158A patent/FI895158A7/fi not_active Application Discontinuation
- 1989-11-06 DE DE89311456T patent/DE68913429D1/de not_active Expired - Lifetime
- 1989-11-06 EP EP89311456A patent/EP0368586B1/en not_active Expired - Lifetime
- 1989-11-07 MY MYPI89001546A patent/MY104476A/en unknown
- 1989-11-11 KR KR1019890016352A patent/KR920009565B1/ko not_active Expired
- 1989-11-11 CN CN89109188A patent/CN1019031B/zh not_active Expired
-
1990
- 1990-06-19 US US07/540,647 patent/US5009863A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE68913429D1 (de) | 1994-04-07 |
| CN1042954A (zh) | 1990-06-13 |
| MY104476A (en) | 1994-04-30 |
| EP0368586B1 (en) | 1994-03-02 |
| EP0368586A1 (en) | 1990-05-16 |
| KR920009565B1 (ko) | 1992-10-19 |
| FI895158A7 (fi) | 1990-05-12 |
| US5009863A (en) | 1991-04-23 |
| JPH02133389A (ja) | 1990-05-22 |
| KR900008069A (ko) | 1990-06-02 |
| JPH0676274B2 (ja) | 1994-09-28 |
| FI895158A0 (fi) | 1989-10-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1019031B (zh) | 制取硅单晶的设备 | |
| CN1020481C (zh) | 单晶硅的制造设备 | |
| KR930003044B1 (ko) | 실리콘 단결정의 제조방법 및 장치 | |
| US5143704A (en) | Apparatus for manufacturing silicon single crystals | |
| CN1055964A (zh) | 制造硅单晶的设备 | |
| JP2888079B2 (ja) | シリコン単結晶引上げ用ルツボ | |
| KR960006262B1 (ko) | 실리콘 단결정의 제조장치 | |
| CN1037933A (zh) | 制备硅单晶的方法和设备 | |
| TW202248470A (zh) | 石英板於單晶矽錠生長期間之用途 | |
| JP2531415B2 (ja) | 結晶成長方法 | |
| JPH01317189A (ja) | シリコン単結晶の製造方法及び装置 | |
| JPH0524969A (ja) | 結晶成長装置 | |
| JPH02279582A (ja) | 半導体単結晶製造装置及び製造方法 | |
| JPH0259494A (ja) | シリコン単結晶の製造方法及び装置 | |
| JPH0745355B2 (ja) | 結晶成長方法及びその装置 | |
| CN223481342U (zh) | 石英舟以及石英组件 | |
| JPH03193692A (ja) | 結晶成長方法 | |
| JPH0316989A (ja) | シリコン単結晶の製造装置 | |
| JPH03131592A (ja) | 結晶成長装置 | |
| JPH03228893A (ja) | 結晶成長方法 | |
| JPH0696480B2 (ja) | 結晶成長方法 | |
| JPH075429B2 (ja) | 結晶成長装置 | |
| JPH089169Y2 (ja) | 単結晶製造装置 | |
| JPH06227890A (ja) | 単結晶成長装置及びこの装置を用いた単結晶成長方法 | |
| JPH01301579A (ja) | シリコン単結晶の製造方法及び装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C13 | Decision | ||
| GR02 | Examined patent application | ||
| AD01 | Patent right deemed abandoned | ||
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |