CN101609796B - Film forming method and method for manufacturing film solar battery - Google Patents
Film forming method and method for manufacturing film solar battery Download PDFInfo
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- CN101609796B CN101609796B CN2008101267211A CN200810126721A CN101609796B CN 101609796 B CN101609796 B CN 101609796B CN 2008101267211 A CN2008101267211 A CN 2008101267211A CN 200810126721 A CN200810126721 A CN 200810126721A CN 101609796 B CN101609796 B CN 101609796B
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- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 56
- 238000010899 nucleation Methods 0.000 claims abstract description 55
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000001257 hydrogen Substances 0.000 claims abstract description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- 239000013081 microcrystal Substances 0.000 claims description 37
- 230000008021 deposition Effects 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 238000013459 approach Methods 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000003595 mist Substances 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 22
- 150000003376 silicon Chemical class 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004050 hot filament vapor deposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
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- 238000009776 industrial production Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- 238000000197 pyrolysis Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a film forming method and a method for manufacturing a film solar battery. The film forming method comprises the following steps: providing a substrate; depositing a seeding layer on the surface of the substrate; depositing an amorphous silicon layer on the surface of the seeding layer; and carrying out thermal annealing in high-pressure hydrogen atmosphere so as to convert the amorphous silicon layer into an amorphous silicon layer. The film forming method can form an amorphous silicon film in a simpler and more reliable mode.
Description
Technical field
The present invention relates to the photovoltaic solar cell technical field, the manufacturing approach of particularly a kind of film formation method and thin-film solar cells.
Background technology
Along with the worsening shortages of the energy, the development and use of renewable green energy resource more and more receive people's attention, receive common people's favor especially especially with the utilization of solar energy.Photovoltaic device (solar cell) as the solar energy converting media changes into electric energy through photoelectric effect with sunlight, incandescence or fluorescence etc.This conversion be when irradiate light when the photovoltaic device, luminous energy is absorbed by the active region of device that to produce electronics right with the hole, these electronics and hole are separated by the built-in electric field of device then, export electric energy by the peripheral circuit collection.
Recent years; Thin-film solar cells and large tracts of land photovoltaic module cause common people's extensive concern all the more; The amorphous silicon hydride (a-Si:H) and microcrystal silicon (μ c-Si:H) thin-film solar cells that particularly occur in recent years are with its large tracts of land, low cost, can be created on the frivolous substrate and be easy to lay the extensive use of advantage in commerce and dwelling house facility such as installation and demonstrated great potential.Structure according to known amorphous silicon hydride and microcrystalline silicon film solar cell; Internal electric field is in the p-i-n structure that contains p type, intrinsic (i) type and the n type rete processed by amorphous silicon and/or microcrystal silicon, to produce; When light of proper wavelength is absorbed, will generate electron-hole pair in the non-doping type intrinsic i layer.Under the effect of built-in electric field, electronics-hole is separated, and electron stream is to n type conduction region, and the hole flows to p type conduction region, and this electronics-hole stream just produces photovoltage.
Semi-conducting material as the non-doping type intrinsic i layer of thin-film solar cells requires to have stronger light absorpting ability; Can produce a large amount of electron hole pairs; As much as possible incident optical energy is changed into useful electric energy, and then improve the photoelectric conversion efficiency of thin-film solar cells.In this respect, microcrystal silicon has higher carrier mobility, and can absorb more longwave optical, and photoelectric conversion efficiency will be higher than amorphous silicon, and under illumination, the photic attenuating effect of amorphous silicon material film can not occur, and performance is more stable.The material that uses in microcrystal silicon and other solar-energy photo-voltaic cell; Particularly compare with polysilicon; Can absorb most solar radiation under several microns the thickness being no more than, and manufacturing process is simple, cost is low, so microcrystal silicon is an ideal material of making thin-film solar cells.
The existing method that forms microcrystal silicon mainly is the method that directly deposits, and comprises radio frequency or very high frequency(VHF) plasma-reinforced chemical vapor deposition (PECVD), hot-wire chemical vapor deposition (HW-CVD) and electron cyclotron resonace chemical vapor deposition (ECR-CVD).Pecvd process is to utilize hydrogen (H
2) dilution silane (SiH
4) gas is source gas; Substrate temperature is between 150～260 ℃; Utilize RF energy that reacting gas is excited and be plasma; Directly deposit the formation microcrystalline silicon film at substrate surface, however this method when large-area film deposition for the uniformity that guarantees film and stability will have lower deposition rate usually, for example be lower than
, this utmost point is unfavorable for enhancing productivity and reducing manufacturing cost.HW-CVD technology mainly is to utilize H
2The SiH of dilution
4Or SiF
4Gas is heated to be deposited on behind the pyrolysis through wire and forms microcrystal silicon on the substrate; Yet there is the problem of metal ion pollution microcrystal silicon material in this method; And the wire limited service life, need often to change, be not easy to continuously large-scale industrial production reliably.ECR-CVD technology is with H
2The silane SiH of dilution
4Gas is source gas, utilizes the high density ion flow near the substrate the ecr plasma district, to deposit the Si atom and forms microcrystalline silicon film.But the degree of crystallinity of this method is lower, and production equipment is complicated, is unfavorable for reducing production costs.
Summary of the invention
The object of the present invention is to provide a kind of film formation method, can form microcrystalline silicon film with a kind of more simple and reliable mode.
Membrane according to the invention formation method comprises:
Substrate is provided;
At said substrate surface deposition seeding layer;
At said seeding layer surface deposition amorphous silicon layer;
In high pressure hydrogen atmosphere, carry out thermal anneal process, change said amorphous silicon layer into microcrystal silicon layer.
Preferably, the pressure of hydrogen is 100～800 atmospheric pressure.
Preferably, the temperature of said thermal annealing is 250 ℃～300 ℃, and the time of annealing in process is 1～10 hour.
Optional, said seeding layer utilizes the pecvd process deposition to form by the mist of hydrogen and silane, and the deposit thickness of said seeding layer is 20 nanometers～300 nanometers.
Preferably, the ratio of said hydrogen and silane is 30: 1 to 200: 1.
Preferably, the process conditions of said pecvd process comprise that plasma exciatiaon power is 200mw/cm
2～600mw/cm
2, the pressure in the reative cell is 0.3Torr～20Torr, temperature is 100 ℃～300 ℃.
Optional, said amorphous silicon layer utilizes the pecvd process deposition to form by the mist of hydrogen and silane, and the frequency range in plasma excitation source is 4MHz～200MHz.
Film formation method of the present invention is applicable to the manufacturing approach of thin-film solar cells, particularly forms the method for the i layer in the p-i-n structure, also comprises the method that forms p layer and n layer.
According to the present invention, a kind of manufacturing approach of thin-film solar cells is provided, after the electrode, said method comprises before glass baseplate surface forms electrically conducting transparent:
Electrode surface deposition bottom is the p type doped amorphous silicon layer of seeding layer before said electrically conducting transparent;
In high pressure hydrogen atmosphere, carry out annealing in process and form microcrystal silicon p layer;
In said microcrystal silicon p laminar surface deposition bottom is the intrinsic amorphous silicon i layer of seeding layer;
In high pressure hydrogen atmosphere, carry out annealing in process and form microcrystal silicon i layer;
In said microcrystal silicon i laminar surface deposition bottom is the n type doped amorphous silicon layer of seeding layer;
In high pressure hydrogen atmosphere, carry out annealing in process and form microcrystal silicon n layer.
According to the present invention, the manufacturing approach of the another kind of thin-film solar cells that provides, after the electrode, said method comprises before glass baseplate surface forms electrically conducting transparent:
The n type doped amorphous silicon layer that intrinsic amorphous silicon i layer that is seeding layer for the p type doped amorphous silicon layer of seeding layer, bottom bottom electrode surface deposits successively before electrically conducting transparent and bottom are seeding layer;
In high pressure hydrogen atmosphere, said each layer carried out thermal anneal process, form microcrystal silicon p layer, microcrystal silicon i layer and microcrystal silicon n layer.
The present invention also comprises the semiconductor structure that is used to utilize above-mentioned film formation method formation microcrystal silicon; Comprise substrate; And at the seeding layer of said substrate surface deposition; With the amorphous silicon layer at said seeding layer surface deposition, the crystal grain of said seeding layer is small, and the thermal anneal process process that is used under hydrogen gas environment changes said amorphous silicon layer into microcrystal silicon layer.
Compared with prior art, the present invention has the following advantages:
The hydrogenation non crystal silicon film that the bottom is a seeding layer that film formation method of the present invention at first forms on substrate carries out annealing in process then, thereby obtains being suitable for being used as the microcrystalline hydrogenated silicon rete of opto-electronic conversion in hydrogen gas environment.The lattice structure of silicon at first begins to reconfigure at the interface of seeding layer in the annealing process of hydrogen gas environment, makes young crystalline substance constantly enlarge, and then makes whole amorphous silicon layer change microcrystal silicon layer into.Compare with direct deposition micro crystal silicon layer, utilize the seeding layer formation microcrystal silicon layer of under hydrogen gas environment, annealing, can make production process more simple and efficient, thereby improve production efficiency.The abundant environment of hydrogen makes that the defective of grain surface in time obtains repairing the higher electronic defects density that microcrystal silicon had of having avoided common direct growth to go out.In addition, film formation method of the present invention can allow to contain high relatively impurity in the silicon materials and the performance that do not influence microcrystal silicon, and less demanding to material and facility helps the depositing large-area film, and reduce manufacturing cost.
Description of drawings
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present invention.In the accompanying drawings, for clarity sake, amplified the thickness of layer.
Fig. 1 is the flow chart of film formation method of the present invention;
Fig. 2 to Fig. 4 is the cross-sectional view of explanation film formation method of the present invention;
Fig. 5 a to Fig. 5 h is the cross-sectional view of explanation thin-film solar cells manufacturing approach of the present invention.
Said diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit protection scope of the present invention at this.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention does not receive the restriction of following disclosed specific embodiment.
Fig. 1 is for the flow chart of film formation method of the present invention, and is as shown in Figure 1, and film formation method of the present invention at first provides a substrate (step S101); This substrate can be a transparent glass substrate, also can any surface will form the substrate (substrate) of microcrystalline silicon film, for example; If will form microcrystal silicon p layer, substrate is the preceding electrode tco layer of electrically conducting transparent so, if will form microcrystal silicon i layer; Substrate is exactly the p layer so, is determined on a case-by-case basis; Next form seeding layer (step S102) at substrate surface, this seeding layer pecvd process capable of using or HW-CVD technology form, and guarantee that this seeding layer has less crystal grain; Form amorphous silicon layer (step S103) on the seeding layer surface then; The deposition process of high-quality amorphous silicon membrane is a lot; Comprise low-pressure chemical vapor phase deposition (LPCVD), plasma enhanced CVD (PECVD), hot-wire chemical vapor deposition (HW-CVD) or the like; These method technical maturities, deposition rate are fast, have overcome the low shortcoming with lack of homogeneity of microcrystalline silicon deposition speed, have improved production efficiency; In ensuing processing step; In being not less than 100 atmospheric hydrogen gas environments; The whole base plate that comprises seeding layer and amorphous silicon layer is carried out thermal anneal process (step S104) being lower than under 300 ℃ the temperature, thereby obtain the microcrystalline hydrogenated silicon film.
Fig. 2 to Fig. 4 is the cross-sectional view of explanation the inventive method.At first referring to shown in Figure 2; On substrate or substrate 100 surfaces, utilize plasma enhanced CVD (PECVD) process deposits seeding layer 101, the source gas that deposits this seeding layer 101 is the mist of hydrogen and silane; In the mist; The ratio of hydrogen and silane is 30: 1 to 200: 1, for example 100: 1, i.e. and H
2: SiH
4=100: 1, the plasma exciatiaon power in RF excited source is 200～600mw/cm
2, the pressure in the reative cell remains on 0.3～20Torr, and temperature is 100～300 ℃.The deposit thickness of seeding layer 101 is 20～300 nanometers.Then, utilize pecvd process to continue deposited amorphous silicon layer 102 on seeding layer 101 surfaces, the high frequency pumping source is adopted in the plasma excitation source; Frequency range is 4～200MHz; For example 13.56MHz, 27MHz, to increase deposition rate, plasma exciatiaon power is 200～600mw/cm
2, the pressure in the reative cell remains on 0.3～5Torr, and temperature is 100～300 ℃.The deposit thickness of amorphous silicon layer 102 is 1～5 micron.The thickness of seeding layer 101 is compared extremely thin with the thickness of amorphous silicon layer 102; Therefore seeding layer 101 is the amorphous silicon layer 110 of seeding layer above that bottom the amorphous silicon layer 102 of deposition can be considered jointly; The effect of seeding layer 101 is that the lattice structure of amorphous silicon layer 102 is changed; Guide its crystallization again, growth crystal grain forms microcrystal silicon layer.
Next as shown in Figure 3, the substrate 100 that the surface is had seeding layer 101 and amorphous silicon layer 102 is put into reaction under high pressure chamber 200, and places on the pedestal 400, and pedestal 400 has heating function, can substrate 100 be heated to required temperature.In reaction under high pressure chamber 200, feed 100～800 atmospheric high pressure hydrogens 300, in preferred embodiment, can add some inert gases in the high pressure hydrogen 300, for example argon gas and/or helium.And substrate 100 is heated to 250～300 ℃ temperature, and seeding layer 101 and amorphous silicon layer 102 are carried out annealing in process, the time of annealing in process is 1～10 hour.In the annealing process of hydrogen gas environment; The lattice structure of silicon at first begins to reconfigure at the interface 115 of seeding layer 101 with amorphous silicon layer 102; The crystal grain of seeding layer 101 is under the help of high pressure hydrogen, and lattice structure constantly changes, and crystal grain constantly expansion also extends to the amorphous silicon layer 102 on it gradually; And then make whole amorphous silicon layer 102 change microcrystalline hydrogenated silicon layer 150 into, as shown in Figure 4.
The formation method of the microcrystalline silicon film of the invention described above is applicable to the manufacturing approach of thin-film solar cells, is not only the i layer that forms in the p-i-n structure, also can be used to form p layer and n layer.Fig. 5 a to Fig. 5 h is the cross-sectional view of explanation thin-film solar cells manufacturing approach of the present invention.Referring to Fig. 5 a to Fig. 5 h; In the manufacturing approach of thin-film solar cells of the present invention; Before glass baseplate surface forms electrically conducting transparent after the electrode; Electrode 500 surface by utilizing pecvd processes deposition bottom is the hydrogenated amorphous silicon layer 510 of p type impurity doped amorphous silicon layer 502 for seeding layer 501, top before electrically conducting transparent, shown in Fig. 5 a; In high pressure hydrogen atmosphere, carry out annealing in process then and form microcrystalline hydrogenated silicon p layer 511, shown in Fig. 2 b; Continuing the deposition bottom at the p of microcrystalline hydrogenated silicon layer 511 surface by utilizing pecvd process then is the hydrogenated amorphous silicon layer 520 of intrinsic amorphous silicon layer 504 for seeding layer 503, top, shown in Fig. 5 c; In high pressure hydrogen atmosphere, carry out annealing in process and form microcrystalline hydrogenated silicon i layer 521, shown in Fig. 5 d; Continue to utilize pecvd process deposition bottom for seeding layer 505, top hydrogenated amorphous silicon layer 530, shown in Fig. 5 e again for n type doped amorphous silicon in microcrystalline hydrogenated silicon i layer 521 surface; And in high pressure hydrogen atmosphere, carry out the n layer 531 that annealing in process forms microcrystalline hydrogenated silicon, shown in Fig. 5 f.
In other embodiments; Can be before electrically conducting transparent electrode 500 surface by utilizing pecvd processes deposit the hydrogenated amorphous silicon layer 530 that n type that the bottom is seeding layer for the hydrogenated amorphous silicon layer 510 of the p type doping impurity of seeding layer, intrinsic amorphous silicon layer 520 that the bottom is seeding layer and bottom mixes successively, shown in Fig. 5 g; In high pressure hydrogen atmosphere, above-mentioned each layer carried out thermal anneal process then, thereby after annealing process finishes, form p layer 511, i layer 521 and the n layer 531 of microcrystalline hydrogenated silicon simultaneously, shown in Fig. 5 h.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.For example, although each in the accompanying drawings layer all be smooth and thickness almost equal, this only is that principle of the present invention is described for ease and clearly.Any those of ordinary skill in the art are not breaking away under the technical scheme scope situation of the present invention, and all the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the protection range of technical scheme of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (9)
1. film formation method comprises:
Substrate is provided;
At said substrate surface deposition seeding layer;
At said seeding layer surface deposition amorphous silicon layer;
In high pressure hydrogen atmosphere, carry out thermal anneal process, change said amorphous silicon layer into microcrystal silicon layer, wherein, said seeding layer utilizes the pecvd process deposition to form by the mist of hydrogen and silane, and the deposit thickness of said seeding layer is 20 nanometers～300 nanometers.
2. the method for claim 1, it is characterized in that: the pressure of hydrogen is 100～800 atmospheric pressure.
3. the method for claim 1, it is characterized in that: the temperature of said thermal annealing is 250 ℃～300 ℃, and the time of annealing is 1～10 hour.
4. the method for claim 1, it is characterized in that: the ratio of said hydrogen and silane is 30: 1 to 200: 1.
5. the method for claim 1, it is characterized in that: the process conditions of said pecvd process comprise that plasma exciatiaon power is 200mw/cm
2～600mw/cm
2, the pressure in the reative cell is 0.3Torr～20Torr, temperature is 100 ℃～300 ℃.
6. the method for claim 1 is characterized in that: said amorphous silicon layer utilizes the pecvd process deposition to form by the mist of hydrogen and silane, and the frequency range in plasma excitation source is 4MHz～200MHz.
7. manufacturing approach that adopts the thin-film solar cells of the said film of claim 1 formation method, after the electrode, said method comprises before glass baseplate surface forms electrically conducting transparent:
Electrode surface deposition bottom is the p type doped amorphous silicon layer of seeding layer before said electrically conducting transparent;
In high pressure hydrogen atmosphere, carry out annealing in process and form microcrystal silicon p layer;
In said microcrystal silicon p laminar surface deposition bottom is the intrinsic amorphous silicon i layer of seeding layer;
In high pressure hydrogen atmosphere, carry out annealing in process and form microcrystal silicon i layer;
In said microcrystal silicon i laminar surface deposition bottom is the n type doped amorphous silicon layer of seeding layer;
In high pressure hydrogen atmosphere, carry out annealing in process and form microcrystal silicon n layer.
8. manufacturing approach that adopts the thin-film solar cells of the said film of claim 1 formation method, after the electrode, said method comprises before glass baseplate surface forms electrically conducting transparent:
The n type doped amorphous silicon layer that intrinsic amorphous silicon i layer that is seeding layer for the p type doped amorphous silicon layer of seeding layer, bottom bottom electrode surface deposits successively before electrically conducting transparent and bottom are seeding layer;
In high pressure hydrogen atmosphere, said each layer carried out thermal anneal process, form microcrystal silicon p layer, microcrystal silicon i layer and microcrystal silicon n layer.
9. semiconductor structure; Comprise substrate, and at the seeding layer of said substrate surface deposition with at the amorphous silicon layer of said seeding layer surface deposition; The crystal grain of said seeding layer is small; The thermal anneal process process that is used under hydrogen gas environment changes said amorphous silicon layer into microcrystal silicon layer, and wherein, the deposit thickness of said seeding layer is 20 nanometers～300 nanometers.
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| JP4967066B2 (en) * | 2010-04-27 | 2012-07-04 | 東京エレクトロン株式会社 | Method and apparatus for forming amorphous silicon film |
| WO2012065957A2 (en) * | 2010-11-16 | 2012-05-24 | Oerlikon Solar Ag, Trübbach | Improved a-si:h absorber layer for a-si single- and multijunction thin film silicon solar cell |
| DE102010062383A1 (en) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Method for converting semiconductor layers |
| DE102010062386B4 (en) | 2010-12-03 | 2014-10-09 | Evonik Degussa Gmbh | Method for converting semiconductor layers, semiconductor layers produced in this way, and electronic and optoelectronic products comprising such semiconductor layers |
| CN102651399B (en) * | 2011-07-19 | 2015-06-17 | 京东方科技集团股份有限公司 | Microcrystal amorphous silicon composite thin film transistor and manufacturing method thereof |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| CN111564365A (en) * | 2020-04-10 | 2020-08-21 | 中国科学院微电子研究所 | A method of depositing thin films and applications thereof, and a method for forming semiconductor active regions |
| CN113921378B (en) * | 2021-09-29 | 2022-08-23 | 惠科股份有限公司 | Preparation method of microcrystalline silicon, preparation method of thin film transistor and array substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1173241A (en) * | 1994-12-02 | 1998-02-11 | 太平太阳有限公司 | Method of manufacturing a multilayer solar cell |
| CN101237005A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Method for forming microcrystalline silicon film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1173241A (en) * | 1994-12-02 | 1998-02-11 | 太平太阳有限公司 | Method of manufacturing a multilayer solar cell |
| CN101237005A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Method for forming microcrystalline silicon film |
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