CN101319303A - Method for manufacturing sputtering target material containing noble metal - Google Patents
Method for manufacturing sputtering target material containing noble metal Download PDFInfo
- Publication number
- CN101319303A CN101319303A CNA2007101105782A CN200710110578A CN101319303A CN 101319303 A CN101319303 A CN 101319303A CN A2007101105782 A CNA2007101105782 A CN A2007101105782A CN 200710110578 A CN200710110578 A CN 200710110578A CN 101319303 A CN101319303 A CN 101319303A
- Authority
- CN
- China
- Prior art keywords
- sputtering target
- preparation
- metal
- noble metal
- target material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 239000013077 target material Substances 0.000 title claims abstract description 29
- 229910000510 noble metal Inorganic materials 0.000 title claims description 50
- 239000000956 alloy Substances 0.000 claims abstract description 53
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 52
- 238000002844 melting Methods 0.000 claims abstract description 43
- 230000008018 melting Effects 0.000 claims abstract description 43
- 238000000137 annealing Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 238000002360 preparation method Methods 0.000 claims abstract description 34
- 238000005266 casting Methods 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000010970 precious metal Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000004381 surface treatment Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000005058 metal casting Methods 0.000 claims abstract description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 31
- 229910017052 cobalt Inorganic materials 0.000 claims description 22
- 239000010941 cobalt Substances 0.000 claims description 22
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 239000003929 acidic solution Substances 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 230000006698 induction Effects 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 238000003723 Smelting Methods 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000005242 forging Methods 0.000 claims description 5
- 238000005098 hot rolling Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000007514 turning Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 13
- 238000001816 cooling Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 238000010891 electric arc Methods 0.000 abstract description 2
- 230000005587 bubbling Effects 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 238000003754 machining Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000498 ball milling Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- UGGYKLULVSLVBW-UHFFFAOYSA-N [Pt].[B].[Cr].[Co] Chemical compound [Pt].[B].[Cr].[Co] UGGYKLULVSLVBW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000007712 rapid solidification Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VSXXZXOZMHLCEU-UHFFFAOYSA-N [B].[Cr].[Co] Chemical compound [B].[Cr].[Co] VSXXZXOZMHLCEU-UHFFFAOYSA-N 0.000 description 1
- DTJAVSFDAWLDHQ-UHFFFAOYSA-N [Cr].[Co].[Pt] Chemical compound [Cr].[Co].[Pt] DTJAVSFDAWLDHQ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000002257 embryonic structure Anatomy 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000010313 vacuum arc remelting Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
技术领域 technical field
本发明涉及一种合金溅镀靶材的制作方法,特别是涉及一种应用于薄膜溅镀制程中的含贵金属溅镀靶材的制作方法。The invention relates to a method for manufacturing an alloy sputtering target material, in particular to a method for manufacturing a noble metal-containing sputtering target material used in a thin film sputtering process.
背景技术 Background technique
硬盘为现代用来储存大量数据的主要元件,而资料主要是存放在硬盘碟片上的磁性薄膜记录层,主要成分是含有铂(Pt)贵金属的钴(Co)基合金材料。而此磁性薄膜记录层是以溅镀(Sputtering)制程方式披覆于硬盘碟片上,因此需要溅镀用的合金靶材。The hard disk is the main component used to store a large amount of data in modern times, and the data is mainly stored in the magnetic thin film recording layer on the hard disk, and the main component is a cobalt (Co)-based alloy material containing platinum (Pt) noble metal. The magnetic thin film recording layer is coated on the hard disk by a sputtering process, so an alloy target for sputtering is required.
而此溅镀制程是指使用等离子对溅镀用合金靶材进行离子轰击,利用离子轰击的动量转移,将合金靶材表面上的原子以气体分子形式撞击出来,在经过附着、吸附、表面迁移、成核等过程后,在硬盘碟片上成长形成磁性薄膜记录层。The sputtering process refers to the use of plasma to ion-bomb the alloy target for sputtering, and use the momentum transfer of the ion bombardment to knock out the atoms on the surface of the alloy target in the form of gas molecules. , nucleation and other processes, grow on the hard disk to form a magnetic thin film recording layer.
由于硬盘技术领域涵盖电子、半导体、激光光学、精密机械、高等物理化学等尖端科技,因此对于溅镀用合金靶材的要求也相对较高,无法以传统的大气熔铸制程来进行靶材的铸造。此外,由于硬盘记录层用靶材内含的铂(Pt)贵金属含量时常高达30wt%以上,因此,如何选用适当制程,以提高靶胚的得料率来避免铂(Pt)贵金属的浪费,便成为从事含贵金属靶材制造商相当关切的议题,也是该行业的竞争力所在。Since the field of hard disk technology covers cutting-edge technologies such as electronics, semiconductors, laser optics, precision machinery, and advanced physical chemistry, the requirements for alloy targets for sputtering are relatively high, and the traditional atmospheric melting and casting process cannot be used to cast targets. . In addition, since the content of platinum (Pt) noble metal contained in the target material for the recording layer of the hard disk is often as high as 30wt%, how to choose an appropriate process to increase the yield of the target blank and avoid the waste of platinum (Pt) noble metal becomes a problem. It is a matter of considerable concern to manufacturers of target materials containing precious metals, and it is also where the industry's competitiveness lies.
美国专利第6,797,137号专利案所揭露的技术手段,则是先以真空熔炼喷粉设备制作出成本较便宜的钴铬硼(CoCrB)母合金,然后再以球磨方式将母合金的粉体与铂(Pt)贵金属的粉体充分混合,最后再施以热等静压(Hot Isostatic Pressure,HIP)制程便可制作出高纯度的钴铬铂硼(CoCrPtB)靶材,此靶材便可用于硬盘磁性记录层的薄膜溅镀制程,然而所采用的球磨方式却容易产生粉体混合不均而造成靶材成分不均的情形,进而降低后续溅镀的品质。The technical means disclosed in the U.S. Patent No. 6,797,137 is to first produce a cheaper cobalt chromium boron (CoCrB) master alloy with vacuum melting and powder spraying equipment, and then use ball milling to mix the powder of the master alloy with platinum. (Pt) noble metal powders are fully mixed, and finally subjected to hot isostatic pressure (Hot Isostatic Pressure, HIP) process to produce high-purity cobalt-chromium-platinum-boron (CoCrPtB) targets, which can be used in hard disks The thin-film sputtering process of the magnetic recording layer, however, adopts a ball milling method, which is prone to uneven powder mixing and uneven target material composition, thereby reducing the quality of subsequent sputtering.
另一种现有溅镀靶材的制作方法,则是利用真空感应熔炼(Vacuum Induction Melting,VIM)制程及真空电弧精炼(VacuumArc Remelting,VAR)制程,制备出高纯度含钴铬(CoCr)合金靶材。其特点是以真空感应熔炼(VIM)的铸锭当作负电极,搭配正电极的铜坩埚,来进行真空电弧精炼(VAR),以得到高品质的铸胚。然而,VIM铸锭高达40%以上的冒口缩孔缺陷必须先切除后才能当作VAR的电极,因此整体的得料率势必低于60%。除此之外,上述两种现有的靶材制造方法所采用的真空喷粉设备、热等静压设备、真空感应熔炼设备、以及真空电弧精炼设备,其设备与制造成本都相当昂贵,无形中也增加靶材的制作成本。Another existing sputtering target manufacturing method is to use vacuum induction melting (Vacuum Induction Melting, VIM) process and vacuum arc refining (Vacuum Arc Remelting, VAR) process to prepare high-purity cobalt-containing chromium (CoCr) alloy target. Its characteristic is to use the ingot of vacuum induction melting (VIM) as the negative electrode, and the copper crucible with the positive electrode to carry out vacuum arc refining (VAR) to obtain high-quality casting embryos. However, more than 40% of riser shrinkage defects in VIM ingots must be removed before they can be used as VAR electrodes, so the overall yield must be lower than 60%. In addition, the equipment and manufacturing costs of the vacuum powder spraying equipment, hot isostatic pressing equipment, vacuum induction melting equipment, and vacuum arc refining equipment used in the above two existing target manufacturing methods are quite expensive and invisible. It also increases the production cost of the target.
因此,如何提高合金靶材的成分均匀细致程度以及得料率,进而有效降低生产成本,提高市场竞争力,便成为溅镀用合金靶材制造商所亟欲努力研究的方向。Therefore, how to improve the uniformity and fineness of the composition of the alloy target and the material yield, so as to effectively reduce the production cost and improve the market competitiveness, has become an urgent research direction for sputtering alloy target manufacturers.
发明内容 Contents of the invention
本发明的目的,在于提供一种含贵金属溅镀靶材的制作方法,具有得料高的优点,而所产出的溅镀靶材不但具有高纯度,并且组织细致成分均匀。The object of the present invention is to provide a method for producing a noble metal-containing sputtering target, which has the advantage of high yield, and the produced sputtering target not only has high purity, but also has a fine structure and uniform composition.
为达到上述目的,本发明含贵金属溅镀靶材的制作方法,包含一准备步骤、一表面处理步骤、一熔铸步骤、一热加工步骤及一退火步骤。In order to achieve the above object, the manufacturing method of the noble metal-containing sputtering target of the present invention includes a preparation step, a surface treatment step, a casting step, a thermal processing step and an annealing step.
该准备步骤是准备一由具磁性的金属元素所制成的高纯度基材及一高纯度贵金属锭,该表面处理步骤则是将该基材与贵金属锭进行去除表面氧化物与油污的作业,该熔铸步骤是取重量百分比50%以下的贵金属锭,配合平衡量的基材,进行真空熔炼,再将真空熔炼所得的合金熔体浇入一金属铸模中,并且冷却该金属铸模,以使合金熔体凝固成型为一铸胚,在合金熔体浇入该金属铸模的同时,同步以电弧加热方式使位于该金属铸模内的合金熔体表面维持高温熔融状,直至浇入过程结束,然后进行该热加工步骤,以将该铸胚予以进行塑性变形作业,再进行该退火步骤,将该铸胚予以进行退火作业,以获得含贵金属的溅镀靶材,供溅镀制程使用。The preparation step is to prepare a high-purity substrate made of magnetic metal elements and a high-purity precious metal ingot, and the surface treatment step is to remove surface oxides and oil stains from the substrate and the precious metal ingot, The melting and casting step is to take a precious metal ingot with a weight percentage of less than 50%, cooperate with a balanced amount of base material, carry out vacuum melting, then pour the alloy melt obtained by vacuum melting into a metal casting mold, and cool the metal casting mold to make the alloy The melt is solidified and formed into a billet. When the alloy melt is poured into the metal mold, the surface of the alloy melt in the metal mold is kept in a high-temperature molten state by means of electric arc heating until the pouring process is completed, and then the The thermal processing step is to perform plastic deformation on the cast billet, and then perform the annealing step to perform annealing on the cast billet to obtain a sputtering target material containing precious metals for use in the sputtering process.
本发明所述含贵金属溅镀靶材的制作方法,该准备步骤所准备的基材选自于下列所构成的群组:铁、钴、镍及这些的一组合。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, the substrate prepared in the preparation step is selected from the group consisting of iron, cobalt, nickel and a combination thereof.
本发明所述含贵金属溅镀靶材的制作方法,该准备步骤所准备的贵金属锭选自于下列所构成的群组:铂、钯、金、银、铑、铱、钌、锇及这些的一组合。The preparation method of the noble metal-containing sputtering target according to the present invention, the noble metal ingot prepared in the preparation step is selected from the group consisting of platinum, palladium, gold, silver, rhodium, iridium, ruthenium, osmium and these a combination.
本发明所述含贵金属溅镀靶材的制作方法,该准备步骤所准备的基材与贵金属锭的纯度皆达重量百分比99.95%以上。According to the manufacturing method of the noble metal-containing sputtering target in the present invention, the purity of the base material and the noble metal ingot prepared in the preparation step is above 99.95% by weight.
本发明所述含贵金属溅镀靶材的制作方法,该准备步骤还准备一纯度达重量百分比99.95%以上的铬金属锭,该基材则为一钴金属锭,该熔铸步骤是将该钴金属锭、铬金属锭及贵金属锭,以重量百分比45%~60%的钴、重量百分比5%~27%的铬、重量百分比25%~45%的贵金属,将其进行真空熔炼以得到合金熔体。The manufacturing method of the noble metal-containing sputtering target according to the present invention, the preparation step also prepares a chromium metal ingot with a purity of more than 99.95% by weight, the base material is a cobalt metal ingot, and the melting and casting step is to prepare the cobalt metal Ingots, chromium metal ingots and precious metal ingots are vacuum smelted with 45% to 60% by weight of cobalt, 5% to 27% by weight of chromium, and 25% to 45% by weight of precious metals to obtain alloy melts .
本发明所述含贵金属溅镀靶材的制作方法,该表面处理步骤是将该基材、铬金属锭,与贵金属锭三者置于酸性溶液中,以超声波振动方式去除表面氧化物与油污,然后再置于去离子水中,同样以超声波振动方式去除残留在表面的酸性溶液,然后再予以烘干。The preparation method of the noble metal-containing sputtering target according to the present invention, the surface treatment step is to place the base material, the chromium metal ingot, and the noble metal ingot in an acidic solution, and remove surface oxides and oil stains by means of ultrasonic vibration, Then it is placed in deionized water, and the acidic solution remaining on the surface is also removed by ultrasonic vibration, and then dried.
本发明所述含贵金属溅镀靶材的制作方法,该表面处理步骤所使用的酸性溶液选自于下列所构成的群组:硝酸、磷酸、盐酸、氢氟酸及王水。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, the acid solution used in the surface treatment step is selected from the group consisting of nitric acid, phosphoric acid, hydrochloric acid, hydrofluoric acid and aqua regia.
本发明所述含贵金属溅镀靶材的制作方法,该制作方法还包含一车制步骤,将该退火步骤结束后所获得的溅镀靶材,经过切片、车除表面氧化层后,供溅镀制程使用。The manufacturing method of the noble metal-containing sputtering target according to the present invention, the manufacturing method also includes a turning step, the sputtering target obtained after the annealing step is finished, after slicing and turning the surface oxide layer, it is used for sputtering Plating process use.
本发明所述含贵金属溅镀靶材的制作方法,该热加工步骤的工作温度介于该铸胚的熔点温度0.75~0.85倍之间,该退火步骤的退火温度低于该热加工步骤工作温度100℃~300℃之间,退火时间介于1~2小时之间。The manufacturing method of the noble metal-containing sputtering target according to the present invention, the working temperature of the thermal processing step is between 0.75 and 0.85 times the melting point temperature of the casting billet, and the annealing temperature of the annealing step is lower than the working temperature of the thermal processing step Between 100°C and 300°C, the annealing time is between 1 and 2 hours.
本发明所述含贵金属溅镀靶材的制作方法,该熔铸步骤于真空熔炼时,还添加重量百分比5%以下的硼元素。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, in the melting and casting step, during vacuum smelting, less than 5% by weight of boron is added.
本发明所述含贵金属溅镀靶材的制作方法,该熔铸步骤所进行的真空熔炼方式为真空感应熔炼。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, the vacuum melting method in the melting and casting step is vacuum induction melting.
本发明所述含贵金属溅镀靶材的制作方法,该熔铸步骤所进行的真空熔炼方式为真空电弧熔炼。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, the vacuum melting method in the melting and casting step is vacuum arc melting.
本发明所述含贵金属溅镀靶材的制作方法,该热加工步骤是采用热锻造。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, the thermal processing step adopts hot forging.
本发明所述含贵金属溅镀靶材的制作方法,该热加工步骤是采用热轧延。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, the thermal processing step adopts hot rolling.
本发明所述含贵金属溅镀靶材的制作方法,该退火步骤是于大气气氛下进行。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, the annealing step is carried out under the atmosphere.
本发明所述含贵金属溅镀靶材的制作方法,该退火步骤是于保护气氛下进行。In the manufacturing method of the noble metal-containing sputtering target of the present invention, the annealing step is carried out under a protective atmosphere.
本发明所述含贵金属溅镀靶材的制作方法,该退火步骤所使用的保护气氛为氩气。In the manufacturing method of the noble metal-containing sputtering target according to the present invention, the protective atmosphere used in the annealing step is argon.
本发明的功效在于,利用合金熔体于金属铸模中凝固成型为铸胚的同时,同步利用电弧加热使合金熔体表面维持高温熔融状,最后才使合金熔体的整体表面同时冷却,而不会由外缘逐渐向中央冷却,因此可以有效消除冒孔缩孔缺陷,并配合进行该热加工、退火步骤,就可获得组织细致成分均匀的溅镀靶材。The efficacy of the present invention lies in that while the alloy melt is solidified and formed into a casting blank in a metal casting mold, the surface of the alloy melt is kept in a high-temperature molten state by means of arc heating simultaneously, and finally the entire surface of the alloy melt is cooled at the same time without It will gradually cool from the outer edge to the center, so it can effectively eliminate the pitting and shrinkage defects, and cooperate with the thermal processing and annealing steps to obtain a sputtering target with fine structure and uniform composition.
附图说明 Description of drawings
图1是一流程图,说明本发明含贵金属溅镀靶材的制作方法的较佳实施例。FIG. 1 is a flow chart illustrating a preferred embodiment of the method for manufacturing a noble metal-containing sputtering target according to the present invention.
图2是一显微组织图,说明实施方法1利用50wt%钴、8wt%铬及42wt%铂的重量组成比例所制成的溅镀靶材,其晶粒尺寸小于150μm。FIG. 2 is a microstructure diagram illustrating the sputtering target made by the
图3是一显微组织图,说明实施方法2利用54wt%钴、14wt%铬、31wt%铂及1wt%硼的重量组成比例所制成的溅镀靶材,其晶粒尺寸约为80μm。Fig. 3 is a microstructure diagram illustrating the sputtering target made of 54wt% cobalt, 14wt% chromium, 31wt% platinum and 1wt% boron in embodiment 2, and its grain size is about 80 μm.
具体实施方式 Detailed ways
下面通过较佳实施例及附图对本发明含贵金属溅镀靶材的制作方法进行详细说明。The manufacturing method of the noble metal-containing sputtering target of the present invention will be described in detail below through preferred embodiments and accompanying drawings.
参阅图1,本发明含贵金属溅镀靶材的制作方法1的较佳实施例,包含一准备步骤11、一表面处理步骤12、一熔铸步骤13、一热加工步骤14、一退火步骤15及一车制步骤16。Referring to Fig. 1, the preferred embodiment of the
该准备步骤11是准备一由具磁性的金属元素所制成的高纯度基材、一高纯度铬金属锭及一高纯度贵金属锭,且该基材、铬金属锭、贵金属锭三者的纯度皆高达99.95wt%以上。The
在本实施例中,该准备步骤11所准备的基材是钴(Co)金属锭,当然也可以是铁(Fe)金属锭,或是镍(Ni)金属锭,或是铁、钴、镍三种金属元素其中至少任两种所混合的合金锭。至于该贵金属锭的成分则是铂(Pt)金属元素,当然也可以是钯(Pd)、金(Au)、银(Ag)、铑(Rh)、铱(Ir)、钌(Ru)、锇(Os)等其他种类贵金属元素,或是其中至少任两种金属元素所混合的合金,上述金属元素皆为本领域普通技术人员容易联想替代,所以不应局限于本实施例的说明。In this embodiment, the base material prepared in the
该表面处理步骤12是将该钴金属锭、铬金属锭,与贵金属锭三者置于酸性溶液中,以超声波振动方式去除表面氧化物与油污,然后再置于去离子水中,同样以超声波振动方式去除残留在表面的酸性溶液,然后再予以烘干。The
在本实施例中,酸性溶液是采用体积浓度95%以上的硝酸溶液,当然也可以采用磷酸、盐酸、氢氟酸,或王水等其他种类的酸性溶液,皆可作为去除表面氧化物与油污的用途,所以不应以本实施例的说明为限。In this embodiment, the acidic solution is a nitric acid solution with a volume concentration of more than 95%. Of course, phosphoric acid, hydrochloric acid, hydrofluoric acid, or other types of acidic solutions such as aqua regia can be used to remove surface oxides and oil stains. Therefore, it should not be limited by the description of this embodiment.
该熔铸步骤13是将该钴金属锭、铬金属锭及贵金属锭,以45wt%~60wt%的钴、5wt%~27wt%的铬、25wt%~45wt%的贵金属,并添加0~5wt%的硼元素,将其进行真空熔炼以得到合金熔体,再将合金熔体浇入一附有冷却循环水路的金属铸模(一般是采用高热传导率的纯铜铸模)中,并且通过冷却水于冷却循环水路不断流动,以冷却该金属铸模,以使合金熔体凝固成型为一铸胚,在合金熔体浇入该金属铸模的同时,同步以电弧加热方式使位于该金属铸模内的合金熔体表面维持高温熔融状,直至浇入过程结束。In the melting and
然后进行该热加工步骤14,以将该铸胚予以进行塑性变形作业(一般就是热锻造或热轧延)形成预定形状,再进行该退火步骤15,将该铸胚予以进行退火作业,以获得含贵金属的溅镀靶材,其中,该热加工步骤14的工作温度介于该铸胚的熔点温度0.75~0.85倍之间,该退火步骤15的退火温度低于该热加工步骤14工作温度100℃~300℃之间,退火时间介于1~2小时之间。Then carry out the hot working
最后再进行该车制步骤16,将该退火步骤15结束后所获得的溅镀靶材,经过切片、车除表面氧化层后,供溅镀制程使用。Finally, the
以下则为采用本实施例所述的各项步骤,依据不同的合金成分组成,以及热加工步骤14、退火步骤15的不同工作条件,所获得的两种实施方法,以清楚地述明本发明含贵金属溅镀靶材的制作方法1,以及本制作方法1所能达成的功效。The following are the two implementation methods obtained by adopting the steps described in this embodiment, according to different alloy compositions, and the different working conditions of the
实施方法1
本实施方法以钴铬铂(CoCrPt)合金溅镀靶材的制作为例,首先于该准备步骤11中,准备纯度高达99.95wt%以上的钴金属锭、铬金属锭,与铂金属锭,接着进行该表面处理步骤12,将上述三个种类的金属锭置于体积浓度95%以上的硝酸溶液中,以超声波振动方式去除表面氧化物与油污,然后再置于去离子水中,同样以超声波振动方式去除残留在表面的硝酸溶液,然后再予以烘干。In this implementation method, the production of a cobalt-chromium-platinum (CoCrPt) alloy sputtering target is taken as an example. First, in the
接着进行该熔铸步骤13,将该钴金属锭、铬金属锭及铂金属锭,以50wt%的钴、8wt%的铬及42wt%的铂的重量组成比例,进行配料秤重,并将秤好的金属原料置于真空熔炼炉中,以真空感应熔炼(Vacuum Induction Melting,VIM)方式得到合金熔体,再将合金熔体浇入附有循环水路且高热传导率的纯铜铸模中进行冷却,以急速凝固成型为一铸胚,在合金熔体浇入铸模的同时,同步以电弧加热方式使位于铸模内的合金熔体表面维持高温熔融状,直至浇入过程结束。Then carry out the melting and casting
然后进行该热加工步骤14,于该铸胚的熔点温度0.85倍下(也就是1200℃)进行热锻造,以将该铸胚予以进行塑性变形作业形成预定形状,接着再进行该退火步骤15,将该铸胚以低于热锻造温度300℃的退火温度(也就是900℃),于大气气氛下进行2小时的退火处理,以获得晶粒细致、组织成分均匀的溅镀靶材。Then carry out the
最后再进行该车制步骤16,将该退火步骤15结束后所获得的溅镀靶材,经过切片、车除表面些微的氧化层后,就可供溅镀制程使用。Finally, the
通过上述制程所制成的溅镀靶材,其得料率约94%,且其显微组织则如图2所示,由图中可以发现溅镀靶材的组织相当细致均匀,且呈现等轴晶型态,晶粒尺寸小于150μm。The yield of the sputtering target produced by the above process is about 94%, and its microstructure is shown in Figure 2. It can be seen from the figure that the structure of the sputtering target is quite fine and uniform, and is equiaxed. Crystal form, the grain size is less than 150μm.
实施方法2Implementation Method 2
本实施方法以钴铬铂硼(CoCrPtB)合金溅镀靶材的制作为例,首先于该准备步骤11中,准备纯度高达99.95wt%以上的钴金属锭、铬金属锭,与铂金属锭,接着进行该表面处理步骤12,将上述三个种类的金属锭置于体积浓度95%以上的盐酸溶液中,以超声波振动方式去除表面氧化物与油污,然后再置于去离子水中,同样以超声波振动方式去除残留在表面的盐酸溶液,然后再予以烘干。In this implementation method, the production of a cobalt-chromium-platinum-boron (CoCrPtB) alloy sputtering target is taken as an example. First, in the
接着进行该熔铸步骤13,将该钴金属锭、铬金属锭及铂金属锭,以54wt%的钴、14wt%的铬及31wt%的铂的重量组成比例进行原料秤重,并添加1wt%的硼,置于真空熔炼炉中,将其进行真空电弧熔炼(Vacuum Arc Melting,VAM)方式得到合金熔体,再将合金熔体浇入附有循环水路且高热传导率的纯铜铸模中进行冷却,以使合金熔体急速凝固成型为一铸胚,在合金熔体浇入铸模的同时,同步以电弧加热方式使位于铸模内的合金熔体表面维持高温熔融状,直至浇入过程结束。Then carry out the melting and casting
然后进行该热加工步骤14,于该铸胚的熔点温度0.75倍下(也就是1100℃)进行热轧延,以将该铸胚予以进行塑性变形作业形成预定形状,接着再进行该退火步骤15,将该铸胚以低于热轧延温度100℃的退火温度(也就是1000℃),于氩气气氛下进行1小时的退火处理,以获得晶粒细致、组织成分均匀的溅镀靶材。Then carry out the
最后再进行该车制步骤16,将该退火步骤15结束后所获得的溅镀靶材,经过切片、车除表面些微的氧化层后,就可供溅镀制程使用。Finally, the
通过上述制程所制成的溅镀靶材,其得料率约92%,且其显微组织则如图3所示,由图中可以发现溅镀靶材的组织相当细致均匀,晶粒尺寸约为80μm。The yield of the sputtering target produced by the above process is about 92%, and its microstructure is shown in Figure 3. It can be seen from the figure that the structure of the sputtering target is quite fine and uniform, and the grain size is about is 80 μm.
通过上述两种实施方法可知,本发明含贵金属溅镀靶材的制作方法1具有以下所述的优点:It can be seen from the above two implementation methods that the
(1)得料率较高,降低溅镀靶材的生产成本:(1) The material yield is high, which reduces the production cost of sputtering targets:
于该熔铸步骤13中,当合金熔体于该金属铸模中冷却凝固成型的同时,同步利用电弧加热使合金熔体表面维持高温熔融状而不会同时凝固,直至合金熔体浇入过程结束后才会结束电弧加热,借此使得合金熔体的整体表面可以同时冷却而不会由外缘逐渐向中央冷却,有效消除该铸胚的冒孔缩孔缺陷;反观现有靶材制作方法,其所制成的合金铸锭还须进行一道去除冒孔缩孔缺陷的过程,所以靶材产品的得料率较低,相较之下,本发明制作方法1所制成最后溅镀靶材产品的得料率高达90%以上,可有效地降低溅镀靶材的生产成本,而且通过该铸胚急速凝固成型,还可以避免低熔点的结晶物大量析出,进而改善该铸胚的热延性。In the melting and casting
(2)纯度高,组织细致成分均匀:(2) High purity, fine tissue and uniform composition:
本发明制作方法1因为在真空环境中使用高纯度金属锭进行熔炼,所以能够避免杂质侵入而维持高纯度,并且再依序经由该熔铸步骤13、热加工步骤14及退火步骤15,就可获得晶粒细致、组织成分均匀的溅镀靶材,不会产生如同一般靶材制作方法采用球磨混合制程,因为粉体混合不均而造成靶材成分不均的问题;因此,使用本发明制作方法1所制成的溅镀靶材,具有纯度高,组织细致成分均匀等优点,对于后续溅镀制程而言,能够维持相当良好的溅镀品质,适合高科技产业运用。The
归纳上述,本发明含贵金属溅镀靶材的制作方法1,通过合金熔体的整体表面是呈现同时冷却的状态,而不会由外缘逐渐向中央冷却,因此可以有效消除该铸胚的冒孔缩孔缺陷,提高溅镀靶材产品的得料率,降低溅镀靶材的生产成本;至于该铸胚通过急速冷凝而成型,还可避免低熔点的结晶物大量的析出,进而改善铸胚的热延性;此外,使用高纯度的金属锭进行该熔铸步骤13、热加工步骤14、退火步骤15所制成的溅镀靶材,还具有纯度高、组织成分细致均匀等优点,有利于提高后续溅镀制程时的品质,所以确实能够达到本发明的目的。To sum up the above, the
Claims (17)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101105782A CN101319303A (en) | 2007-06-05 | 2007-06-05 | Method for manufacturing sputtering target material containing noble metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101105782A CN101319303A (en) | 2007-06-05 | 2007-06-05 | Method for manufacturing sputtering target material containing noble metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101319303A true CN101319303A (en) | 2008-12-10 |
Family
ID=40179570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101105782A Pending CN101319303A (en) | 2007-06-05 | 2007-06-05 | Method for manufacturing sputtering target material containing noble metal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101319303A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103667768A (en) * | 2013-12-24 | 2014-03-26 | 济源豫金靶材科技有限公司 | Silver target manufacturing method |
| CN104014767A (en) * | 2014-06-05 | 2014-09-03 | 贵研铂业股份有限公司 | Method for preparing NiV alloy target |
| CN104032273A (en) * | 2014-06-09 | 2014-09-10 | 励福实业(江门)贵金属有限公司 | Fastness rose gold target and preparation method thereof |
| CN104480439A (en) * | 2014-12-31 | 2015-04-01 | 宁夏东方钽业股份有限公司 | Preparation process of tantalum target material |
-
2007
- 2007-06-05 CN CNA2007101105782A patent/CN101319303A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103667768A (en) * | 2013-12-24 | 2014-03-26 | 济源豫金靶材科技有限公司 | Silver target manufacturing method |
| CN104014767A (en) * | 2014-06-05 | 2014-09-03 | 贵研铂业股份有限公司 | Method for preparing NiV alloy target |
| CN104014767B (en) * | 2014-06-05 | 2016-05-04 | 贵研铂业股份有限公司 | A kind of method of preparing NiV alloy target material |
| CN104032273A (en) * | 2014-06-09 | 2014-09-10 | 励福实业(江门)贵金属有限公司 | Fastness rose gold target and preparation method thereof |
| CN104480439A (en) * | 2014-12-31 | 2015-04-01 | 宁夏东方钽业股份有限公司 | Preparation process of tantalum target material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110484886B (en) | Nickel-rhenium alloy rotary tubular target containing trace rare earth elements and preparation method | |
| CN105745344B (en) | Aluminum alloy plate for magnetic disk substrate, manufacturing method thereof, and magnetic disk manufacturing method | |
| TWI546401B (en) | Cu-Ga alloy sputtering target and its manufacturing method | |
| CN101805835A (en) | Silver-gold alloy target material, manufacturing method and application thereof | |
| CN103710577B (en) | Nickel-vanadium alloy magnetron sputtering rotary target material containing trace rare-earth element and preparation method | |
| CN102732845B (en) | A nickel-chromium alloy target with high purity and high composition uniformity and its preparation method | |
| CN104919080A (en) | Sputtering target and method for manufacturing same | |
| CN110592406A (en) | Preparation method of high-purity aluminum-copper alloy target blank for sputtering | |
| CN100549199C (en) | A kind of manufacture method of magnetron sputtering Co-Cr-Ta alloy target | |
| US7754027B2 (en) | Method for manufacturing a sputtering target | |
| TW201715046A (en) | Cobalt, iron, boron, and/or nickel alloy-containing articles and methods for making same | |
| TWI387661B (en) | Manufacturing method of nickel alloy target | |
| CN102877033A (en) | Manganese alloy target material and its manufacturing method | |
| TWI617680B (en) | Cu-Ga alloy sputtering target and manufacturing method thereof | |
| CN1370853A (en) | Metal sputtering target manufacturing method | |
| CN101319303A (en) | Method for manufacturing sputtering target material containing noble metal | |
| TWI654323B (en) | Copper alloy sputtering target and manufacturing method of copper alloy sputtering target | |
| CN116288196B (en) | A CoFeB target material and preparation method thereof | |
| JP5750393B2 (en) | Cu-Ga alloy sputtering target and method for producing the same | |
| TWI458849B (en) | Indium target and its manufacturing method | |
| JP7086514B2 (en) | Cobalt or cobalt-based alloy sputtering target and its manufacturing method | |
| TWI387497B (en) | Manufacturing method of nickel alloy target | |
| CN114134355A (en) | A method for strengthening and toughening of refractory high-entropy alloys | |
| CN114934261B (en) | Iron target, iron-nickel alloy target and manufacturing method thereof | |
| TWI308598B (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20081210 |