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CN101162699A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN101162699A
CN101162699A CNA2007101615412A CN200710161541A CN101162699A CN 101162699 A CN101162699 A CN 101162699A CN A2007101615412 A CNA2007101615412 A CN A2007101615412A CN 200710161541 A CN200710161541 A CN 200710161541A CN 101162699 A CN101162699 A CN 101162699A
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CN
China
Prior art keywords
mentioned
bump electrodes
bump
probe
semiconductor device
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CNA2007101615412A
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English (en)
Inventor
市原诚一
大渕笃
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Renesas Technology Corp
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Renesas Technology Corp
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Publication of CN101162699A publication Critical patent/CN101162699A/zh
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Abstract

本发明涉及一种可以解决随着凸点电极的间距变窄而显现的问题的技术。具体而言，提供一种下述技术，即在电气特性检测的探针接触时，即使探针对凸点电极的接触位置产生偏移，也可以防止探针接触于邻接的凸点电极。将凸点电极4a～4c配置成排列于一行，且邻接的凸点电极的一部分区域偏移。而且，使探针6a～6c接触于偏移的区域以实施电气特性检测。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种半导体装置及其制造技术，特别是涉及一种驱动液晶显示装置的LCD(Liquid Crystal Display，液晶显示器)用驱动器及有效地适用于制造其的技术。
背景技术
在日本专利特开2004-134471号公报(专利文献1)中记载着下述技术：在所有半导体芯片上均形成一个大小已定的焊垫，在此焊垫上，根据安装形态改变凸点电极的大小(尺寸)及配置而形成各不相同的凸点电极。根据此技术，可以容易地应对于客户所定制的半导体芯片的安装形态，从而可以缩短开发TAT(turn-around time，周转时间)。
【专利文献1】
日本专利特开2004-134471号公报
发明内容
近年来，将液晶用于显示元件的LCD(Liquid Crystal Display，液晶显示器)急速普及。此LCD是通过用于驱动LCD的驱动器来控制的。LCD用驱动器由半导体芯片构成，安装在例如玻璃基板上。构成LCD用驱动器的半导体芯片成为在半导体基板上形成着多个晶体管及多层配线的结构，且在其表面上形成着凸点电极。而且，半导体芯片隔着形成在表面上的凸点电极而安装在玻璃基板上。此时，通过凸点电极来连接半导体芯片与玻璃基板，凸点电极与形成在玻璃基板上的配线的电连接是通过构成各向异性导电膜(ACF，Anisotropic Conductive Film)的导电粒子来进行的。从提高此导电粒子的电连接的可靠性的观点考虑，为了使大量导电粒子存在于半导体芯片与玻璃基板之间，增大半导体芯片的凸点电极的面积。即，构成LCD用驱动器的半导体芯片的凸点电极有下述特征，即其尺寸远远大于与安装基板之间不存在导电粒子的半导体装置中所使用的半导体芯片的凸点电极的尺寸。
在构成LCD用驱动器的半导体芯片上，如上所述形成着凸点电极。此凸点电极在半导体芯片上形成着多个，且沿着呈矩形形状的半导体芯片的边例如排列成一行。半导体芯片是通过分割半导体晶片的芯片区域形成的，在分割成半导体芯片之前，处于在半导体晶片的芯片区域上形成着多个凸点电极的状态。在芯片区域上形成着多个凸点电极的半导体晶片中，在分割芯片区域而形成半导体芯片之前，以半导体晶片的状态对形成在芯片区域上的半导体元件实施电气特性检测。半导体元件的电气特性检测是通过使探针接触于形成在芯片区域上的凸点电极而进行的。
图29是表示形成在半导体晶片的芯片区域上的相邻的凸点电极的平面图。如图29所示，在芯片区域的表面上形成着表面保护膜(钝化膜)101，且在此表面保护膜101上设置着凸点电极102a、102b。凸点电极102a、102b表示相邻的凸点电极，虽未图示，但沿着芯片区域的一边排列着多个凸点电极。凸点电极102a、102b形成长方形的平面形状，且排列在芯片区域的短边方向上。具体而言，凸点电极102a、102b的短边方向的尺寸例如约为16μm，相邻的凸点电极102a与凸点电极102b之间的尺寸例如约为14μm。因此，凸点电极102a、102b间的间距约为30μm。
图30表示沿着图29的A-A线切断的截面的截面图。在半导体晶片上形成着晶体管等半导体元件(未图示)，在半导体元件上形成着层间绝缘膜与配线的叠层结构。在图30中图示作为最上层的层间绝缘膜的绝缘膜103。在绝缘膜103上，例如，形成着由铝膜构成的焊接垫104a、104b，且形成着表面保护膜101以覆盖焊接垫104a、104b。在焊接垫104a、104b上的表面保护膜101上形成着开口部，在所述开口部上形成着凸点电极102a、102b。这些凸点电极102a、102b分别与焊接垫104a、104b电连接。
图31是表示使探针接触于以上述方式构成的凸点电极102a、102b以进行电气特性检测的情形的平面图。如图31所示，探针105a、105b分别接触于凸点电极102a、102b。图31中表示探针105a、105b的前端部接触于凸点电极102a、102b的情形。探针105a、105b的前端部形成圆形形状，且其直径例如约为10μm～20μm。用实线圆形表示探针105a、105b在理想的位置上接触于凸点电极102a、102b的情形。
此处，如图31所示，对于邻接的凸点电极102a、102b而言，探针105a、105b的接触位置不同。即，将相邻的探针105a、105b配置成锯齿状。由此，即使凸点电极102a、102b间变窄，也可以防止邻接的探针105a、105b相接触。如此，对应于凸点电极102a、102b间的间距变窄而改良探针105a、105b的配置。
与凸点电极102a、102b接触的探针105a、105b较理想的是在图31所示的实线圆形的位置上接触。然而，有时会因探针105a、105b的位置精度而产生偏移。其原因在于使用悬臂方式的探针装置进行电气特性检测。探针装置为悬臂方式时，探针105a、105b的形状是以可以弹性变形的状态构成的，按压探针105a、105b的前端以与凸点电极102a、102b接触、实现导通。然而，如图32所示，悬臂方式的探针105b的前端形状为L字形，通过按压探针105b的前端，探针105b的前端因弹性作用而在水平方向上移动，由此使探针105b的前端从原本欲接触的位置偏移。用虚线圆形表示探针105a、105b的接触位置偏移的情况。探针105a、105b的位置偏移程度为±3μm左右，因此如图29所示，当凸点电极102a、102b间的间距约为30μm时，即使探针105a、105b的位置偏移，也可以避免接触于邻接的凸点电极而短路的问题。图32是表示沿着图31的A-A线切断的截面图。观察图32可知，即使探针105b的位置产生偏移，探针105b也不会与邻接的凸点电极102a接触。
然而，近年来，伴随着LCD的小型化及高精细化，LCD用驱动器的输出用的凸点电极数变多。因此，凸点电极间的距离变窄。例如，如图33所示，呈长方形的凸点电极102a、102b的短边方向的长度约为10μm，相邻的凸点电极102a、102b间的距离缩小到约为8μm。因此，相邻的凸点电极102a、102b间的间距约为18μm。
图33表示使探针接触于具有此种凸点电极的半导体芯片以实施电气特性检测的情形。在图33中，实线圆形表示探针105a、105b在理想位置上接触于凸点电极102a、102b的情形。实施电气特性检测时，较理想的是如实线圆形所示，使探针105a、105b在理想位置上接触于凸点电极102a、102b。
然而，探针105a、105b有时会因位置精度的问题而产生接触位置偏移。图33中，用虚线圆形表示探针105a、105b从理想位置偏移而与凸点电极102a、102b接触的情形。在探针105a、105b的位置产生偏移时，对于图31及图32所示的半导体芯片而言，由于确保了某种程度的凸点电极102a、102b间的间距，因此可以避免探针105a、105b与邻接的凸点电极102a、102b接触。然而，对于图33所示的半导体芯片而言，凸点电极102a、102b间的间距变窄，因此如果探针105a、105b产生位置偏移，则将产生探针105a、105b与邻接的凸点电极102a、102b接触的问题。如果探针105a、105b与邻接的凸点电极102a、102b接触，则邻接的凸点电极102a、102b经由探针105a、105b而短路，因此无法实行正常的电气特性检测。图34表示沿着图33的A-A线切断的截面图。如图34所示可知，如果与凸点电极102b接触的探针105b的位置从理想位置(用实线表示)偏移(用虚线表示)，则探针105b将与邻接的凸点电极102a接触。由此可知，如果凸点电极102a、102b间的间距变窄，则容易产生因探针105a、105b的位置偏移而导致的短路不良。
作为防止因探针105a、105b的位置偏移而导致的短路不良的方法，可考虑缩小探针105a、105b的前端直径。通过缩小探针105a、105b的前端直径，即使探针105a、105b产生位置偏移，也可以抑制探针105a、105b接触于邻接的凸点电极102a、102b，从而可以减少电气特性检测时的短路不良。
然而，上述方法中，不使用以往的探针而是使用新的前端直径细小的探针。即，必须制造新的前端直径细小的探针来替代以往的探针。由此，由于制造新的探针，因此存在制造成本增大的问题。此外，前端直径细小的探针也存在寿命变短的问题。从而可知通过以如此方式使探针的前端直径变得细小，则虽然可以减少因探针的位置偏移而导致的短路不良，但将产生制造成本增大的问题。
此外，作为其他方法，可考虑不使用悬臂方式的探针装置，而使用探针前端仅在垂直方向上移动的薄膜探针方式的探针装置。然而，当探针装置为薄膜探针方式的情况下，其动作机构比悬臂方式复杂，因此装置的成本增大，从而增加半导体装置的制造成本。此外，即便使用薄膜探针方式，也无法完全抑制探针前端接触于凸点电极时产生的位置偏移问题，伴随着间距变窄，如果相邻的凸点电极间的间距变得更窄，则即使使用薄膜探针方式，也无法防止电气特性检测时的短路不良。
此外，作为其他方法，可考虑下述方法：如图35所示，将多个凸点电极(输出用的凸点电极)107以隔一个的方式沿着半导体芯片106的短边方向交替地配置(锯齿状配置)。如果将凸点电极107配置成锯齿状，则不会在探针前端所接触的区域周围配置着邻接的凸点电极107，因此即使探针的接触位置产生偏移，也可以抑制短路不良。然而，在将多个凸点电极107配置成锯齿状的情况下，在半导体芯片106的短边方向上，半导体芯片106的尺寸增大配置着两行凸点电极107的区域的程度。由此，难以实现半导体装置的小型化。另外，分别从锯齿状配置的多个凸点电极107引出配线，与配置着一行凸点电极107的情况相比更复杂，难以实现半导体装置的低成本化。此外，即使仅将多个凸点电极107配置成锯齿状，如果相邻的凸点电极107间的距离变得更窄，则探针前端的接触位置的偏移量大于凸点电极107间的距离，仍难以抑制上述短路不良问题。
本发明之目的在于提供一种可以解决伴随着凸点电极的间距变窄而显现的问题的技术。具体而言，提供一种下述技术：在电气特性检测的探针接触时，即使探针与凸点电极的接触位置偏移，也可以防止探针接触于邻接的凸点电极。
本发明的上述及其他的目的与新颖特征可根据本说明书的记述及附图得以明确。
以下简单地说明本申请案所揭示的发明中的代表性发明的概要。
本发明的半导体装置的制造方法的特征在于，包括：(a)在半导体晶片的芯片区域上形成多个凸点电极；以及(b)通过使锯齿状配置的探针接触于上述多个凸点电极以进行电气特性检测，而且上述多个凸点电极中相邻的凸点电极形成为各自的一部分区域相互偏移。
此外，本发明的半导体装置的特征在于，具备形成有多个凸点电极的半导体芯片，且上述多个凸点电极中相邻的凸点电极的各自的一部分区域相互偏移。
[发明的效果]
以下简单说明根据本申请案所揭示的发明中代表性发明可获得的效果。
将多个凸点电极中相邻的凸点的电极构成为各自的一部分区域相互偏移，因此，在电气特性检测的探针接触时，即使探针与凸点电极的接触位置偏移，也可以防止探针与邻接的凸点电极接触。
附图说明
图1是表示本发明的实施形态1的半导体芯片的平面图。
图2是表示将图1所示的输出用凸点电极加以放大的图。
图3是表示将探针接触于输出用凸点电极以实施电气特性检测的情形的图。
图4是表示在输出用凸点电极上形成探针痕的情形的图。
图5是说明将凸点电极配置成排列于一行，且邻接的凸点电极的一部分区域偏移的结构的定义的图。
图6是表示不包含在将凸点电极配置成排列于一行，且邻接的凸点电极的一部分区域偏移的配置中的示例的图。
图7是表示安装着具有锯齿状配置的凸点电极的半导体芯片的玻璃基板的结构的图。
图8是表示安装着具有配置成一行的凸点电极的半导体芯片的玻璃基板的结构的图。
图9是表示安装着本发明的半导体芯片的玻璃基板的结构的图。
图10是表示实施形态1的半导体装置的制造步骤的截面图。
图11是表示继图10之后的半导体装置的制造步骤的截面图。
图12是表示继图11之后的半导体装置的制造步骤的截面图。
图13是表示继图12之后的半导体装置的制造步骤的截面图。
图14是表示继图13之后的半导体装置的制造步骤的截面图。
图15是表示继图14之后的半导体装置的制造步骤的截面图。
图16是表示凸点电极的平面配置的图。
图17是表示悬臂方式的探针装置的外观图。
图18是表示沿着图17的A-A线切断的截面的截面图。
图19是表示使探针接触于凸点电极的情形的图。
图20是表示使探针接触于凸点电极的位置的平面图。
图21是表示在凸点电极上形成着探针痕的情形的平面图。
图22是表示在玻璃基板上安装着半导体芯片的情形的截面图。
图23是表示在玻璃基板上安装着半导体芯片的情形的截面图。
图24是表示在液晶显示装置上搭载着半导体芯片的示例的截面图。
图25是表示液晶显示装置的结构的图。
图26是表示实施形态2的半导体芯片的平面图。
图27是放大表示图26所示的输出用凸点电极的图。
图28是表示安装着具有锯齿状配置的凸点电极的半导体芯片的玻璃基板的结构的图。
图29是本发明人等所研究的图、且是表示形成在半导体晶片的芯片区域上的相邻的凸点电极的平面图。
图30是沿着图29的A-A线切断的截面图。
图31是本发明人等所研究的图、且是表示使探针接触于凸点电极以实施电气特性检测的情形的平面图。
图32是沿着图31的A-A线切断的截面图。
图33是本发明人等所研究的图、且是表示使探针接触于间距变窄的凸点电极以实施电气特性检测的情形的平面图。
图34是沿着图33的A-A线切断的截面图。
图35是本发明人等所研究的图、且是表示将输出用凸点电极配置为锯齿状的示例的平面图。
[符号的说明]
1    半导体芯片
2    半导体基板
3    凸点电极
4    凸点电极
4a   凸点电极
4b   凸点电极
4c   凸点电极
6a   探针
6b   探针
6c   探针
7a   探针痕
7b   探针痕
7c   探针痕
10a  电极
10b  电极
10c  电极
11a  配线
11b  配线
11c  配线
12   绝缘膜
20   绝缘膜
21   焊垫
22   表面保护膜
23   UBM膜
24   光阻膜
25   凸点电极
25a  凸点电极
25b  凸点电极
25c  凸点电极
30   探针装置
31   探针基板
32   探针
32a  探针
32b  探针
32c  探针
33a  探针痕
33b  探针痕
33c  探针痕
40   半导体芯片
41   玻璃基板
42   电极
43   各向异性导电膜
44   绝缘膜
45   导电性粒子
46     玻璃基板
47     柔性印刷基板
48     显示部
50     凸点电极
50a    凸点电极
50b    凸点电极
50c    凸点电极
51     凸点电极
51a    凸点电极
51b    凸点电极
52a    探针
52b    探针
52c    探针
52d    探针
52e    探针
55     玻璃基板
56a    电极
56b    电极
56c    电极
57a    电极
57b    电极
57c    电极
58     绝缘膜
101    表面保护膜
102a   凸点电极
102b   凸点电极
103    绝缘膜
104a   焊接垫
104b   焊接垫
105a   探针
105b   探针
106  半导体芯片
107  凸点电极
X    偏移量
Y    长度
具体实施方式
下述实施形态中，为了便于说明，必要时分割成多个部分或者实施形态进行说明，但除了特别说明的情况以外，上述多个部分或者实施形态并非毫不相关，而是处于一方为另一方的一部分或者全部的变形例、详细说明、补充说明等的关系中。
此外，下述实施形态中，涉及要素的数等(包括个数、数值、量、范围等)时，除了特别明示的情况以及在原理上被明确限定为特定数的情况等以外，并未限定为上述特定数，可以为特定数以上或以下。
另外，当然，在下述实施形态中，对于其结构要素(也包括要素步骤等)而言，除了特别明示的情况以及考虑到原理上明确为必需的情况等以外，不一定为必需要素。
同样，在下述实施形态中，涉及结构要素等的形状、位置关系等时，除了特别明示的情况以及考虑到在原理上明确并非如此的情况等以外，包含实质上近似或者类似于此形状等的形状等。此情况对于上述数值以及范围而言也相同。
此外，在用以说明实施形态的所有图中，对相同构件原则上标记相同符号，并省略其重复说明。另外，为了便于理解图式，对平面图有时也附上阴影。
(实施形态1)图1是表示本实施形态1的半导体芯片1(半导体装置)的布局结构的平面图。本实施形态1的半导体芯片1用作LCD用驱动器。图1中，半导体芯片1，例如，具有平面形状呈细长的长方形状的半导体基板2，在其主面上，例如形成着驱动液晶显示装置的LCD用驱动器。此LCD用驱动器具有对构成LCD的单元阵列(cell array)的各像素供给电压以控制液晶分子的方向的功能。
在本实施形态1中，举例说明驱动液晶显示装置的LCD用驱动器中的驱动STN(SuperTwisted Nematic，超扭曲向列)方式的液晶显示装置的LCD用驱动器。所谓STN方式是指液晶显示装置的驱动方式的一种，且为单纯矩阵方式。即为下述方式：在相互交叉的X轴方向与Y轴方向此两个方向上遍布着导线，从X轴方向与Y轴方向此两个方向对导线施加电压后，位于交点区域(单元)的液晶分子的方向产生变化，从而驱动液晶显示装置。作为STN方式的优点可列举能以低成本制造。
图1是表示用于STN方式的液晶显示装置的LCD用驱动器的图。如图1所示，在半导体芯片1的外周附近，沿着半导体芯片1的外周以特定间隔为单位配置着多个凸点电极。在呈长方形的半导体芯片1的一条长边上形成着凸点电极3。此凸点电极3是用于对半导体芯片1内部输入输入信号的电极。另一方面，在半导体芯片1的另一条长边上形成着凸点电极4。此凸点电极4是用于从作为LCD用驱动器的半导体芯片1对液晶显示器输出输出信号的电极。即，凸点电极4是分别对应于遍布在液晶显示器的X轴电极及Y轴电极而设置的。另外，图1中，表示在半导体芯片1的短边上形成着凸点电极4的示例，但随着半导体装置的高功能化或小型化，也可以沿着半导体芯片1的两条短边形成着输出用凸点电极4。此外，在图1中，沿着半导体芯片1的一条长边形成着输入用凸点电极3，且沿着半导体芯片1的另一条长边形成着输出用凸点电极4，但也可以在形成着输入用凸点电极3的长边的一部分上形成着输出用凸点电极4。
以如此方式构成的LCD用驱动器具有输出用凸点电极4的数量多于输入用凸点电极3的数量。因此，输出用凸点电极4的间隔窄于输入用凸点电极3的间隔。在用于STN方式的液晶显示装置的LCD用驱动器中，如图1所示，常常是输入用凸点电极3及输出用凸点电极4双方均沿着半导体芯片1的长边方向排列成一行。通常，输出用凸点电极4也与输入用凸点电极3相同，并不偏移而整齐地排列成一行。
此处，本发明的特征之一在于输出用凸点电极4的配置位置。即，如图1所示，本发明具有下述特征：输出用凸点电极4沿着半导体芯片1的长边排列成一行，相邻的凸点电极4形成为各自的一部分区域沿着半导体芯片1的短边方向相互偏移。
对上述特征进行说明。图2是将形成图1所示的输出用凸点电极4的区域的一部分放大的图。图2中，输出用凸点电极4a～4c并排配置于一行。此时，邻接的凸点电极4a与凸点电极4b配置成一部分区域相互偏移，同样，邻接的凸点电极4b与凸点电极4c也配置成一部分区域相互偏移。
具体而言，输出用凸点电极4a～4c形成长方形的形状，且短边方向的长度约为10μm。此外，凸点电极4a与凸点电极4b间的间隔为8μm。同样，凸点电极4b与凸点电极4c间的间隔也为8μm。因此，输出用凸点电极4a～4c的间距约为18μm。而且，相对于凸点电极4a、4c，凸点电极4b在凸点电极4a～4c的长边方向，向下偏移约30μm。对于以如下方式排列成一行的输出用凸点电极4a～4c而言，邻接的凸点电极4a与凸点电极4b(也可以称为邻接的凸点电极4b与凸点电极4c)配置成一部分区域相互偏移。此方面为本发明的特征之一，以下参照图式说明其优点。
图3是表示使探针6a～6c接触于凸点电极4a～4c以实施电气特性检测的情形的图。电气特性检测是在分割成半导体芯片之前的半导体晶片的状态下实施的。即，图3表示形成在半导体晶片的芯片区域上的凸点电极4a～4c，使探针6a～6c接触于这些凸点电极4a～4c上。
首先，作为对本发明的特征进行说明的前提，将探针6a～6c配置成锯齿状，例如，对于邻接的凸点电极4a与凸点电极4b而言，探针6a、6b的接触位置不同。即，如图3所示，对于凸点电极4a而言，探针6a接触于凸点电极4a的一端侧，另一方面对于凸点电极4b而言，探针6b接触于凸点电极4b的另一端侧。以如此方式将探针6a～6c配置成锯齿状，使探针6a、6b在邻接的凸点电极4a与凸点电极4b上接触于相互偏移的位置，以此不使邻接的探针6a、6b相接触。
近年来，随着LCD的高精细化，形成在LCD用驱动器上的凸点电极的数量不断增加。例如，在用于STN方式的液晶显示装置的LCD用驱动器中，如图1所示，输出用凸点电极4在半导体芯片1的长边方向上排列成一行。因此，随着凸点电极4的数量的增加，凸点电极4间的间距变窄。换言之对应于图3中的凸点电极4a～4c间的距离变窄。
此处，探针6a～6c的前端直径约为10μm～20μm，因此，如果凸点电极4a～4c的间距变窄，则邻接的探针6a～6c间的接触将成为问题。此问题在使邻接的探针6a～6c分别接触于凸点电极4a～4c的相同位置的情况下显着地表现出来。因此，通过将探针6a～6c配置成锯齿状，使探针6a～6c接触于凸点电极4a～4c的不同位置。通过以如此方式构成，即使凸点电极4a～4c的间距变窄，也可以避免邻接的探针6a～6c相接触的问题。如此将探针6a～6c配置成锯齿状成为本发明的前提条件。
其次，如果凸点电极4a～4c的间距更窄则会产生新的问题。在实施本发明之前，凸点电极4a～4c整齐地排列成一行。即使在采用以如此方式将凸点电极4a～4c整齐地排列成一行的结构的情况下，也可以通过将邻接的探针6a～6c配置成锯齿状，来防止邻接的探针6a～6c相接触。然而，将显现出下述问题。即，探针6a～6c的位置精度存在某程度的幅度。因此，有时探针6a～6c会从理想位置偏移而接触于凸点电极4a～4c。此时，如果邻接凸点电极4a～4c的间距变窄，则会产生下述问题，即，从理想的接触位置偏移的探针6a～6c接触于本不应该接触的邻接的凸点电极。例如，如果接触于凸点电极4a的探针6a从理想接触位置偏移到右侧，则将与邻接于凸点电极4a的凸点电极4b接触。即，探针6a与其本不应该接触的凸点电极4b接触。由此，邻接的凸点电极4a与凸点电极4b经由探针6a电连接而短路，因此无法实施正常的电气特性检测。如此，如果在将凸点电极4a～4c整齐地配置为一行的状态下使凸点电极4a～4c间的间距变窄，则虽然可以通过将探针6a～6c配置成锯齿状来防止邻接的探针6a～6c间的接触，但无法避免因探针6a～6c的位置偏移而导致探针接触于邻接的凸点电极。
因此，在本发明中，并不是将凸点电极4a～4c整齐地配置成一行，而是如图3所示，将邻接的凸点电极4a与凸点电极4b配置成一部分区域偏移。而且，使探针6a～6c接触于偏移区域。由此，可以防止因探针6a～6c的位置偏移而导致邻接的凸点电极短路。
在图3中，用实线圆形表示在理想位置上与凸点电极4a～4c接触的探针6a～6c。相对于此，用虚线圆形表示探针6a～6c产生位置偏移的情况。例如，图3中虽未图示但在凸点电极4a～4c整齐地排列成一行的情况下，如果探针6a的位置偏移到右侧，则可认为探针6a不仅接触于凸点电极4a，还接触于本不应该接触的凸点电极4b。相对于此，如图3所示，将凸点电极4a～4c排列成一行，但将邻接的凸点电极4a与凸点电极4b配置成一部分区域偏移，由此，例如即使探针6a的位置偏移到右侧，也可以防止此探针6a接触于邻接的凸点电极4b。如此，本发明通过将邻接的凸点电极4a与凸点电极4b配置成一行并且配置成一部分区域偏移，则可以防止因探针6a的位置偏移而导致凸点电极4a、4b间的短路。在邻接的凸点电极4a与凸点电极4b中一部分区域偏移，对于其偏移量而言，只要可以防止因探针6a的位置偏移而导致凸点电极4a与凸点电极4b间的短路即可，因此仅偏移接触探针6a的区域的程度即充分。即，将邻接的凸点电极4a与凸点电极4b配置成仅偏移接触探针6a的区域的程度，且使探针6a接触于偏移的区域，由此可以获得防止因探针6a的位置偏移而导致凸点电极4a、4b间的短路不良的效果。
如上所述，本发明在下述方面具有特征：并不是将凸点电极4a～4c整齐地配置成一行，而是将邻接的凸点电极4a与凸点电极4b配置成一部分区域偏移。此特征点可以说是本发明的结构特征，另外，本发明在下述方面也具有特征：使探针6a～6c接触于偏移区域以实施电气特性检测。此特征点可以说是制造方法的特征，但也显现为结构特征。
对此方面进行说明。如图3所示，使探针6a～6c接触于凸点电极4a～4c以实施电气特性检测。此时，如图4所示，在探针6a～6c所接触的区域上，因探针6a～6c接触时的压力而形成探针痕7a～7c。因此，可知是在哪个位置上使探针6a～6c接触于凸点电极4a～4c以实施电气特性检测。因此，例如，如图4所示，如果在凸点电极4a～4c的偏移的一部分区域上存在着探针痕7a～7c，则可知使探针接触于凸点电极4a～4c的偏移的一部分区域。即，在本发明中，如图3所示，通过使探针6a接触于凸点电极4a的偏移的一部分区域以实施电气特性检测，则可使探针6a不接触于邻接的凸点电极4b。此方面可以说是制造方法的特征，然而，因在凸点电极4a上形成着探针6a接触时所产生的探针痕7a，因此如果观察到探针痕7a，则可明确得知是使探针6a接触于凸点电极4a的偏移的一部分区域。因此，可知制造方法的特征也显现为结构特征。
其次，图5中表示将凸点电极配置成排列于一行，且邻接的凸点电极的一部分区域相互偏移的本发明的特征性结构，对此结构的定义进行说明。
图5中，对邻接的凸点电极4b与凸点电极4c进行说明。如图5所示，使凸点电极4b的重心位置与凸点电极4c的重心位置仅偏移X。此外，凸点电极4a～4c的平面形状形成长方形，且使长边的长度为Y。此时，凸点电极4b的重心位置与凸点电极4c的重心位置之偏移量X小于凸点电极4a～4c的长边的长度Y。换言之，偏移量X小于一个凸点电极1的大小。在本案说明书中，使此种配置成为“将凸点电极4a～4c配置成排列于一行，且邻接的凸点电极的一部分区域相互偏移”。即，在图5所示的将凸点电极4a～4c排列成一行的前提下，使邻接的凸点电极的一部分区域偏移。图5所示的结构中，凸点电极4b与凸点电极4c相互偏移，但看作是将偏移的凸点电极4b与凸点电极4c排列成一行，且在排列成一行的凸点电极4b与凸点电极4c中使一部分区域偏移。
另一方面，图6表示不包含在本案说明书所述的“将凸点电极4a～4c配置成排列于一行，且邻接的凸点电极的一部分区域相互偏移”的结构中的示例。图6中，凸点电极4b与凸点电极4c也是偏移，但凸点电极4b的重心位置与凸点电极4c的重心位置的偏移量X大于凸点电极4a～4c的长边的长度Y。此时，虽然可以将凸点电极4a与凸点电极4c排列成一行，但无法将凸点电极4b与凸点电极4a、4c排列成一行。即，图6所示的结构可解释为将凸点电极4a、4c与凸点电极4b配置成两行。图6所示的结构一般称为锯齿状配置。因此，在将凸点电极4a～4c配置成排列于一行，且邻接的凸点电极的一部分区域相互偏移的结构中，并不包含本案说明书所述的锯齿状配置。
继而，对本发明的特征性结构中不包含锯齿状配置的理由进行说明。可认为，如图6所示，可以认为即使将形成在半导体芯片上的输出用凸点电极配置成锯齿状，也与本发明相同，可以防止因探针的位置偏移而导致的凸点电极间的短路。然而，对于用于STN方式的液晶显示装置的LCD用驱动器(半导体芯片)而言，必须降低制造成本，因此从降低制造成本的观点考虑，不将输出用凸点电极配置成锯齿状，而是排列成一行。对将输出用凸点电极配置于一行时的制造成本低于配置成锯齿状时的制造成本的理由进行说明。
图7是表示安装LCD用驱动器(半导体芯片)的玻璃基板的图。在图7中表示将形成在半导体芯片上的输出用凸点电极配置成锯齿状时的玻璃基板的结构。即，在玻璃基板上形成着与形成在半导体芯片上的输出用凸点电极电连接的电极10a～10c。此电极10a～10c对应于形成在半导体芯片上的输出用凸点电极而配置成锯齿状。配线11a～11c分别与形成在玻璃基板上的电极10a～10c连接。此配线11a～11c连接于液晶显示装置的液晶显示部。
此处，STN方式是指单纯矩阵方式，且STN方式存在驱动电压较高的特征。因此，必须增大形成在半导体芯片上的凸点电极的面积，伴随此，也必须增大形成在玻璃基板上的电极10a～10c的面积。形成在玻璃基板上的电极10a～10c配置成锯齿状，因此，与电极10b连接的配线11b必须形成为通过电极10a与电极10c之间。然而，由于电极10a及电极10c的尺寸增大某程度，所以电极10a与电极10c间的空隙变窄。必须在此变窄的空隙中形成配线11b。形成在半导体芯片上的凸点电极与形成在玻璃基板上的电极10a～10c由各向异性导电膜(Anisotoropic Conductive Film)连接，但有因构成此各向异性导电膜的导电粒子而导致在配线11b与电极10a或者电极10c之间产生短路不良的顾虑。
因此，如图7所示，必须在包含电极10a与电极10c之间的配线11a～11c上形成由绝缘膜12形成的涂层。即，如果将形成在半导体芯片上的输出用凸点电极配置成锯齿状，则必须在安装着半导体芯片的玻璃基板上涂敷绝缘膜12。由于在玻璃基板上涂敷绝缘膜12，因此产生制造成本增加的问题。STN方式的液晶显示装置必须以低成本形成，因此通常不采用此种增加制造成本的结构。
图8表示将形成在半导体芯片上的输出用凸点电极排列成一行时的玻璃基板的结构。如图8所示，形成在玻璃基板上的电极10a～10c，对应于输出用凸点电极而排列成一行。而且，配线11a～11c与排列成一行的电极10a～10c连接。此时，电极10a～10c不是配置成锯齿状而是排列成一行，因此如图7所示，无须将配线11b形成为通过电极10a与电极10c之间。因此，无须在安装着半导体芯片的玻璃基板上涂敷绝缘膜。因此，可以抑制制造成本的增加。由此可知，用于STN方式的液晶显示装置的LCD驱动器(半导体芯片)中，不是将输出用凸点电极配置成锯齿状而是配置成一行。
从制造成本的观点考虑，在用于STN方式的液晶显示装置的LCD驱动器中，可以说最理想的是将输出用凸点电极整齐地排列成一行。然而，在使凸点电极的间距变窄时，如果将输出用凸点电极整齐地排列成一行，则将会产生因探针的位置偏移而导致邻接的凸点电极短路的问题。
因此，在本发明中采用将凸点电极排列成一行，且将邻接的凸点电极配置成一部分区域相互偏移的结构。根据此结构，可以防止因探针的位置偏移而导致的凸点电极间的短路不良。图9表示使形成在半导体芯片上的凸点电极的配置成为上述结构时，安装着半导体芯片的玻璃基板的结构。如图9所示，形成在玻璃基板上的电极10a～10c也对应于形成在半导体芯片上的输出用凸点电极而排列成一行，且邻接的电极配置成一部分区域相互偏移。然而，如图7所示，将配线11b形成为并不是完全通过电极10a与电极10c之间，因此即使不在玻璃基板上涂敷绝缘膜也无妨。因此，根据本发明，不会增加制造成本，且可以解决因探针的位置偏移而导致邻接的凸点电极短路的问题。
在本发明中采用将凸点电极排列为一行，且将邻接的凸点电极配置成一部分区域相互偏移的结构，但最理想的是各自的一部区域偏移的偏移量为必需最小限度。此原因在于，如果偏移量变大，则图9所示的配线11b将形成为通过电极10a与电极10c之间。即，必须在玻璃基板上涂敷绝缘膜，从而导致制造成本增加。所谓的偏移量为必需最小限度，如果从只要可以在偏移的一部分区域上利用探针的接触来实施电气特性检测即可的方面考虑，则只要确保偏移的一部分区域的大小为接触探针的接触区域的大小即可。
本实施形态1中的半导体装置以上述方式构成，以下，参照图式对其制造方法进行说明。
首先，未图示，例如在由单晶硅构成的半导体基板上形成着MOSFET(Metal OxideSemiconductor Field Effect Transistor，金属氧化物半导体场效应晶体管)等半导体元件，在此半导体元件上形成着多层配线。图10中表示形成在最上层的配线，且省略在此最上层上所形成的配线的下层的结构。
如图10所示，形成例如由氧化硅膜构成的绝缘膜20。绝缘膜20例如可以使用CVD(Chemical Vapor Deposition，化学气相沉积)法形成。继而，在绝缘膜20上层叠形成着钛/氮化钛膜、铝膜及钛/氮化钛膜。此后，使用光刻技术及蚀刻技术，使叠层膜图案化。通过此图案化形成焊垫21。
继而，如图11所示，在形成着焊垫21的绝缘膜20上形成表面保护膜22。表面保护膜22例如由氮化硅膜形成，且例如可以使用CVD法形成。其次，使用光刻技术及蚀刻技术，在表面保护膜22上形成开口部。此开口部形成在焊垫21上，且露出焊垫21的表面。
其次，如图12所示，在包含开口部内的表面保护膜22上形成UBM(Under BumpMetal，凸点下金属层)膜23。UBM膜23例如可以使用溅镀法形成，例如，由钛膜、镍膜、钯膜、钛·钨合金膜、氮化钛膜或者金膜等单层膜或者叠层膜形成。此处，UBM膜23是具有如下功能的膜，即除提高凸点电极与焊垫21或表面保护膜22的粘附性的功能之外，还具有抑制或者防止在后续步骤中形成的导体膜的金属元素移动到配线等中、或反之配线等的金属元素移动到导体膜侧的下述障壁功能。此外，UBM膜23也有作为后述电镀步骤中的电极的作用。
继而，如图13所示，在UBM膜23上涂敷光阻膜24后，通过对此光阻膜24实施曝光、显影处理而进行图案化。进行图案化以使光阻膜24不残留在凸点电极形成区域。而且，如图14所示，通过例如使用电镀法形成金膜作为导体膜，由此形成凸点电极25。此后，如图15所示，除去已图案化的光阻膜24及由光阻膜24覆盖的UBM膜23。借此，形成由金膜及UBM膜23构成的凸点电极25。
图16表示以如此方式形成的凸点电极的平面配置。如图16所示，在表面保护膜22上形成着凸点电极25a～25c。此凸点电极25a～25c形成为排列于一行，且邻接的凸点电极的一部分区域偏移。如图10～图15中的说明，可以用形成通常的凸块电极的步骤来制造。即，经过与沿着半导体晶片的芯片区域的一边整齐地形成一行凸点电极的方法大致相同的步骤，形成配置为排列于一行，且邻接的凸点电极的一部分区域偏移的凸点电极25a～25c。不同之处在于，改变用于形成凸点电极25a～25c的光阻膜的图案化。因此，可以通过仅改变用光刻技术进行图案化来实现本实施形态1的特征性结构，因此不增加制造成本便可以实现上述特征性结构。
其次，对在芯片区域上形成着凸点电极25a～25c的半导体晶片实施电气特性检测。图17是表示在电气特性检测时所使用的悬臂方式的探针装置(探针卡)30的图。在图17中，悬臂方式的探针装置30的结构为在圆形状的探针基板31上形成着多个探针32。图18是表示沿着图17的A-A线切断的截面的截面图。如图18所示的结构般，在探针基板31上以可以弹性变形的状态形成着探针32，使探针32的前端接触于凸点电极，由此实施电气特性检测。图19中表示使探针32接触于凸点电极的情形。如图19所示，凸点电极25配置为排列于一行，且邻接的凸点电极的一部分区域偏移，配置成锯齿状的探针32接触于以如此方式配置的凸点电极25。
图20是表示使探针32a～32c接触于凸点电极25a～25c以实施电气特性检测的情形的平面图。在图20中，将凸点电极25a～25c配置成排列于一行，且邻接的凸点电极的一部分区域偏移。而且，使探针32a～32c接触于各凸块电极的偏移的一部分区域以实施电气特性检测。此时，使探针32a～32c接触于各凸点电极25a～25c的偏移的一部分区域，因此即使探针32a～32c产生位置偏移也不会接触于邻接的凸点电极。图20中，用实线圆形表示使探针32a～32c接触于凸点电极25a～25c的理想位置的情况，用虚线圆形表示探针32a～32c从此理想位置偏移的情况。根据此虚线圆形也可知，由于凸点电极25a～25c的一部分区域偏移、且使探针32a～32c接触于此偏移的一部分区域，因此如虚线圆形所示可知，即使探针32a～32c产生位置偏移，探针32a～32c也不接触于邻接的凸点电极。因此，可以防止因探针32a～32c的位置偏移而导致的邻接的凸点电极短路。即，即使凸点电极25a～25c的间距变窄，也可以正常地使用探针32a～32c进行电气特性检测，而又不会在邻接的凸点电极间产生短路不良。特别在本实施形态1中，由于仅改变凸点电极25a～25c的布局配置，因此可以提高电气特性检测的可靠性而又不增加制造成本。即，可以提高半导体装置的制造产率而又不会增加制造成本。另外，无须缩小探针32a～32c自身的直径，可以利用以往的探针，因此与形成新探针的情况相比可以降低制造成本。
其次，图21是表示实施电气特性检测后的凸点电极25a～25c的平面图。如图21所示可知，在凸点电极25a～25c上形成着接触探针时所形成的探针痕33a～33c。只要观察上述探针痕33a～33c，便可以把握使探针接触于凸点电极25a～25c的哪个区域以实施电气特性检测的。例如，在图21中，根据在凸点电极25a～25c的偏移的一部分区域上形成着探针痕33a～33c，便可知使探针接触于偏移区域以实施电气特性检测。如此，可以实施本实施形态1的电气特性检测。
继而，通过对半导体晶片进行切割来分割成一个个的半导体芯片。借此，可以获得作为LCD用驱动器的半导体芯片。
此后，将以上述方式形成的半导体芯片粘附安装在安装基板上。图22表示将半导体芯片40安装在玻璃基板41上的情况(COG，Chip On Glass)。如图22所示，导体芯片40与玻璃基板41是经由各向异性导电膜(ACF，Anisotropic Conductive Film)43连接的。在半导体芯片40上形成着凸点电极25，以此凸点电极25与玻璃基板41的电极42相连接的方式进行安装。在凸点电极25与电极42之间，存在着由绝缘膜44及导电性粒子45构成的各向异性导电膜43，通过各向异性导电膜43中所包含的导电性粒子45使凸点电极25与电极42电连接。
如图23所示，通过半导体芯片40及玻璃基板41挤碎各向异性导电膜43内的导电性粒子45以确保导电性。即，在各向异性导电膜43内含有导电性粒子45，可通过挤碎此导电性粒子45来显现出导电性。因此，通过确保凸点电极25的面积并挤碎较多的导电性粒子45，可利用导电性粒子45使凸点电极25与电极42间确实地电连接。如此，LCD用驱动器(半导体芯片40)必须利用各向异性导电膜43粘附于玻璃基板41，为了使尽可能多的导电性粒子45存在于凸点电极25与玻璃基板41的电极42之间，形成在LCD用驱动器上的凸点电极25具有长方形的较大的面积。详细地说，输出用凸点电极25的平面形状呈长方形，其长边的长度大于输入用凸点电极的一边的长度。此外，输出用凸点电极25的配置成其长边在与半导体芯片40的长边交叉的方向上延伸。如果仅使较多的导电性粒子45存在于凸点电极25与玻璃基板41的电极42之间，则例如即使凸点电极25的平面形状形成为正方形，只要凸点电极25的面积较大也无妨。然而，当使凸点电极25形成为正方形时，难以在半导体芯片40的长边方向上提高可以在一行上所配置的凸点电极的数量。相对于此，如果形成为长方形状、另外凸点电极25配置为其长边在与半导体芯片40的长边交叉的方向上延伸，则可以一方面配置更多的凸点电极25，一方面增大凸点电极25的面积。
图24表示在玻璃基板41上安装着半导体芯片40的情形的截面图。如图24所示，在玻璃基板(第1玻璃基板)41上搭载着其他玻璃基板(第2玻璃基板)46，借此形成LCD的显示部。而且，在LCD的显示部附近的玻璃基板41上搭载着作为LCD用驱动器的半导体芯片40。在半导体芯片40上形成着凸点电极25，凸点电极25与形成在玻璃基板41上的电极经由各向异性导电膜43连接。此外，玻璃基板41与柔性印刷基板(Flexible PrintedCircuit，柔性印刷电路)47也经由各向异性导电膜43连接。如此搭载在玻璃基板41上的半导体芯片40中，输出用凸点电极25与LCD的显示部电连接，输入用凸点电极与柔性印刷基板47连接。
图25是表示LCD的整体结构的图。如图25所示，在玻璃基板上形成着LCD的显示部48，在此显示部48中显示图像。在显示部48附近的玻璃基板上搭载着作为LCD用驱动器的半导体芯片40。在半导体芯片40附近搭载着柔性印刷基板47，在柔性印刷基板47与LCD的显示部48之间搭载着作为LCD用驱动器的半导体芯片40。如此，可以制造在玻璃基板41上搭载着半导体芯片40的液晶显示装置(LCD)。
(实施形态2)在上述实施形态1中对用于STN方式的液晶显示装置的LCD驱动器进行了说明，在本实施形态2中对用于TFT(Thin Film Transistor，薄膜晶体管)方式的液晶显示装置的LCD驱动器进行说明。
TFT方式是被称为主动矩阵方式的液晶显示器的驱动方式的一种。具体而言，在相互交叉的X轴方向与Y轴方向此两个方向上遍布导线，从X轴方向及Y轴方向此两个方向对导线施加电压后，位于交点区域(单元)的液晶分子的方向产生变化，从而驱动液晶显示装置，除此结构外，还在各交点区域(单元)上配置着作为主动元件的晶体管。主动元件，例如通过X轴方向的导线的电压来切换接通/断开状态，如果在主动元件处于接通状态时也对Y轴方向的导线施加电压，则可以控制位于交点区域的目标液晶分子的方向。借此，可以仅使目标单元确实地动作。TFT方式的优点为，具有与单纯矩阵方式相比残像少、视角宽广的特征。另外具有对比度也较高、且反应速度快的特征。
图26是表示用于TFT方式的液晶显示装置的半导体芯片(LCD用驱动器)1的布局结构图。本实施形态2的半导体芯片1与上述实施形态1的半导体芯片1的不同之处在于，在上述实施形态1中，输出用凸点电极排列成一行，但在本实施形态2中，输出用凸点电极锯齿状地排列成多行。
如图26所示，在本实施形态2中，作为输出用凸点电极，在第一行形成着凸点电极50，在第二行形成着凸点电极51。通过此凸点电极50与凸点电极51形成锯齿状配置。如此在用于TFT方式的液晶显示装置的LCD用驱动器中，常常是输出用的凸点电极并不排列成一行，而是配置成锯齿状。即使在将输出用凸点电极配置成锯齿状的情况下，如果输出用凸点电极的间距变窄，则有在邻接配置于同一行的凸点电极间因探针的位置偏移而导致产生短路不良的顾虑。此问题在STN方式的LCD驱动器中将输出用凸点电极排列成一行的情况下显现出来，但在TFT方式LCD驱动器中将输出用凸点电极排列成多行的情况下也可产生。
因此，本实施形态2中，如图26所示，将排列在第一行的凸点电极50与排列在第二行的凸点电极51此双方配置成在同一行上邻接的凸点电极的一部分区域偏移。借此，可以防止在邻接配置于同一行上的凸点电极间因探针的位置偏移而导致短路不良。
图27是表示以邻接配置于同一行上的凸点电极的一部分区域偏移的结构，使探针52a～52e接触于锯齿状配置的凸点电极50a～50c、51a、51b的示例的图。图27中，在第一行上排列着凸点电极50a～50c，例如，在第一行上邻接配置的凸点电极50a与凸点电极50b配置成一部分区域偏移。而且，使探针52a、52b分别与偏移配置的一部分区域接触。因此，例如，即使与凸点电极50a接触的探针52a的位置偏移到右侧也不会接触于凸点电极50b。在图27中，用实线圆形表示使探针在理想位置进行接触的情况，用虚线圆形表示从理想位置偏移的情况。
同样，邻接配置在第二行上的凸点电极51a与凸点电极51b也是一部分区域相互偏移。而且，使探针52d、52e接触于相互偏移的一部分区域。因此，即使探针52d的位置偏移到右侧，也不会接触于凸点电极51b。因此，对于配置成锯齿状的凸点电极50a～50c、51a、51b而言，可以防止因探针52a～52e的位置偏移而导致邻接的凸点电极短路。即，即使凸点电极50a～50c或者凸点电极51a、51b的间距变窄，也可以正常地使用探针52a～52e进行电气特性检测，而又不会在邻接的凸点电极间产生短路不良。
图28是表示安装LCD用驱动器(半导体芯片)的玻璃基板的图。图28中，表示将形成在半导体芯片上的输出用凸点电极配置成锯齿状时的玻璃基板的结构。即，与形成在半导体芯片上的输出用凸点电极电连接的电极56a～56c、57a～57c形成在玻璃基板上。此电极56a～56c、57a～57c对应于形成在半导体芯片上的输出用凸点电极而配置成锯齿状。配线分别连接于形成在玻璃基板上的电极56a～56c、57a～57c。此配线连接于液晶显示装置的液晶显示部。
此处，与电极57a～57c连接的配线通过电极56a～56c之间。由于电极56a～56c间变窄，因此与电极57a～57c连接的配线容易短路。因此，在本实施形态2中，在配线上涂敷绝缘膜58。由此可以防止配线间的短路不良。
在STN方式的情况下，由于必须降低制造成本，因此必须避免在玻璃基板上涂敷绝缘膜。因此，不是将形成在半导体芯片上的凸点电极配置成锯齿状，而是排列成一行。相对于此，在TFT方式的情况下，与降低制造成本相比，更注重于提高品质，因此即使在玻璃基板上涂敷绝缘膜也无妨。TFT方式的情况下，由于常常是将凸点电极配置为锯齿状，因此必须在玻璃基板上涂敷绝缘膜以提高配线的可靠性。
以上，基于实施形态对本发明人所完成的发明进行了具体说明，但本发明并未限定于上述实施形态，可以在不偏离其主旨的范围内实行各种变更。
上述实施形态中表示将半导体芯片(LCD驱动器)安装在玻璃基板上的示例，但并未限定于此，在将半导体芯片安装在印刷配线基板(COB，Chip On Board)上、或将半导体芯片安装在薄膜基板上的情况下，也可以应用本发明。
[产业上的可利用性]
本发明可以广泛地用于制造半导体装置的制造业。

Claims (21)

1.一种半导体装置的制造方法，其特征在于，包括：(a)在半导体晶片的芯片区域上形成多个凸点电极；以及(b)通过使锯齿状配置的探针接触于上述多个凸点电极来进行电气特性检测；且上述多个凸点电极中相邻的凸点电极形成为各自的一部分区域相互偏移。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，上述多个凸点电极的平面形状为长方形，上述多个凸点电极中相邻的凸点电极形成为各自的一部分区域在上述凸点电极的长边方向上相互偏移。
3.根据权利要求1所述的半导体装置的制造方法，其特征在于，上述多个凸点电极中相邻的凸点电极仅相互偏移接触上述探针的区域的程度。
4.根据权利要求1所述的半导体装置的制造方法，其特征在于，此制造方法另外包括：(c)将上述半导体晶片分割为多个半导体芯片；以及(d)隔着上述多个凸点电极，将上述多个半导体芯片分别安装在玻璃基板上。
5.根据权利要求1所述的半导体装置的制造方法，其特征在于，此制造方法另外包括：(c)将上述半导体晶片分割为多个半导体芯片；以及(d)隔着上述多个凸点电极，将上述多个半导体芯片分别安装在配线基板上；上述多个凸点电极与上述配线基板的端子经由导电性粒子电连接。
6.根据权利要求5所述的半导体装置的制造方法，其特征在于，上述配线基板是玻璃基板。
7.根据权利要求1所述的半导体装置的制造方法，其特征在于，上述探针是在悬臂方式的探针装置中所使用的。
8.根据权利要求1所述的半导体装置的制造方法，其特征在于，上述芯片区域形成矩形形状，上述多个凸点电极沿着上述芯片区域的一边排列成一行。
9.根据权利要求1所述的半导体装置的制造方法，其特征在于，上述芯片区域形成矩形形状，且上述多个凸点电极沿着上述芯片区域的一边排列成多行。
10.根据权利要求1所述的半导体装置的制造方法，其特征在于，上述(b)步骤中，通过使上述探针接触于上述多个凸点电极的各自的一部分区域上，实施电气特性检测。
11.根据权利要求10所述的半导体装置的制造方法，其特征在于，在上述多个凸点电极的各自的一部分区域上，形成着使上述探针接触时所造成的探针痕。
12.根据权利要求10所述的半导体装置的制造方法，其特征在于，使上述探针接触于上述多个凸点电极中相邻的凸点电极的相互偏移的区域以进行电气特性检测。
13.根据权利要求12所述的半导体装置的制造方法，其特征在于，在上述多个凸点电极中相邻的凸点电极的相互偏移的区域上形成着探针痕。
14.根据权利要求1所述的半导体装置的制造方法，其特征在于，对于上述多个凸点电极中相邻的凸点电极而言，相邻的凸点电极的重心位置偏移，且上述重心的位置偏移量小于一个凸点电极的大小。
15.一种半导体装置，其特征在于，该半导体装置包括形成有多个凸点电极的半导体芯片，上述多个凸点电极中相邻的凸点电极的各自的一部分区域相互偏移。
16.根据权利要求15所述的半导体装置，其特征在于，对于上述多个凸点电极中相邻的凸点电极而言，相互偏移的区域为使探针接触的接触区域。
17.根据权利要求15所述的半导体装置，其特征在于，对于上述多个凸点电极中相邻的凸点电极而言，在相互偏移的区域上形成着使探针接触时所造成的探针痕。
18.根据权利要求15所述的半导体装置，其特征在于，该半导体装置另外包括玻璃基板，上述半导体芯片与上述玻璃基板经由上述多个凸点电极连接。
19.根据权利要求18所述的半导体装置，其特征在于，上述半导体芯片是驱动液晶显示元件的LCD用驱动器。
20.根据权利要求19所述的半导体装置，其特征在于，上述半导体芯片是驱动STN方式的液晶显示装置的上述LCD用驱动器。
21.根据权利要求19所述的半导体装置，其特征在于，上述半导体芯片是驱动TFT方式的液晶显示装置的上述LCD用驱动器。
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