CN100590522C - Gray tone mask manufacturing method and gray tone mask - Google Patents
Gray tone mask manufacturing method and gray tone mask Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- Preparing Plates And Mask In Photomechanical Process (AREA)
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Abstract
在形成了具有遮光部、透光部以及半透光部的装置图形；以及用于位置对齐的标记图形的灰调掩模的制造方法中，具有：准备在透明基板上至少形成了遮光膜的掩模版的步骤；遮光部图形形成步骤，其中包括下述步骤：形成第1抗蚀图形，将该第1抗蚀图形作为掩模，蚀刻遮光膜；在形成了遮光部图形的透明基板上形成半透光膜的步骤；以及半透光部图形形成步骤，其中包括下述步骤：形成第2抗蚀图形，将该第2抗蚀图形作为掩模，蚀刻半透光膜，在遮光部图形形成步骤中，在形成遮光部图形的同时，形成具有遮光部和透光部的所期望的标记图形，在半透光部图形形成步骤中的第2描绘图形的描绘之前，具有使得在上述标记图形中的透光部不存在半透光膜的步骤。
In the method for manufacturing a gray tone mask having a device pattern having a light-shielding portion, a light-transmitting portion, and a semi-light-transmitting portion; The step of the mask plate; the step of forming the pattern of the light-shielding part, which includes the following steps: forming a first resist pattern, using the first resist pattern as a mask, and etching the light-shielding film; The step of the semi-transmissive film; and the step of forming the pattern of the semi-transparent part, which includes the following steps: forming the second resist pattern, using the second resist pattern as a mask, etching the semi-transparent film, and forming the pattern on the light-shielding part In the forming step, while forming the light-shielding portion pattern, a desired mark pattern having a light-shielding portion and a light-transmitting portion is formed, and before the drawing of the second drawing figure in the semi-light-transmitting portion pattern forming step, there is a pattern so that the above-mentioned mark There is no semi-transparent film step in the transparent part of the graph.
Description
Technical field
The present invention relates to employed gray tone mask and manufacture method thereof in the manufacturing of liquid crystal indicator (Liquid Crystal Display: below, be called LCD) etc.
Background technology
In the past, in the LCD field, proposed to reduce the method for making required photomask number.Promptly, because thin-film transistor LCD device (Thin Film Transistor Liquid CrystalDisplay: below, be called TFT-LCD) compare with CRT (cathode-ray tube (CRT)) to have and be easy to make advantage slim and that power consumption is low, therefore currently advancing its commercialization rapidly.TFT-LCD has the schematic configuration that forms across the overlapping TFT substrate of liquid crystal phase and color filter, this TFT substrate has at being arranged as the structure that each rectangular pixel is arranged TFT, and this color filter and each pixel have been arranged red, green and blue pixel graphics accordingly.For TFT-LCD, manufacturing process's quantity is many, and only the TFT substrate will use 5 ~ 6 photomasks to make.Under such situation, proposed to use 4 photomasks to carry out the method for the manufacturing of TFT substrate (for example, following non-patent literature 1).
This method is the photomask (below, be called gray tone mask) that has light shielding part, transmittance section and semi light transmitting part (tone portion) by use, reduces the number of masks of use.
In Fig. 4 (a) and Fig. 4 (b) (Fig. 4 (b) is the continuity of the manufacturing process of Fig. 4 (a)), show an example of the TFT substrate manufacturing process that uses gray tone mask.
On glass substrate 1, form the grid metal film,, form grid 2 by using the photoetching process of photomask.After this, form gate insulating film the 3, the 1st semiconductor film 4 (a-Si), the 2nd semiconductor film 5 (N+a-Si), source leakage metal film 6 and positive light anti-etching film 7 (Fig. 4 (a) (1)).Then, the gray tone mask 10 that has light shielding part 11, transmittance section 12 and semi light transmitting part 13 by use, eurymeric photoresist 7 is exposed and develops, form the 1st resist pattern 7a thus, make it cover TFT groove and source and leak and form zone, data line and form the zone and make groove form the zone and leak than the source and form zone thin (Fig. 4 (a) (2)).Then, the 1st resist pattern 7a as mask, is carried out etching (Fig. 4 (a) (3)) to the source leakage with metal film 6 and the 2nd, the 1st semiconductor film 5,4.Then, remove the thin etchant resist that groove forms the zone, form the 2nd resist pattern 7b (Fig. 4 (b) (1)) by carry out ashing with oxygen.Then, the 2nd resist pattern 7b as mask, is carried out etching to the source leakage with metal film 6, formation source/drain electrode 6a, 6b then, carries out etching (Fig. 4 (b) (2)) to the 2nd semiconductor film 5, and be last, peels off the 2nd residual resist pattern 7b (Fig. 4 (b) (3)).
As employed gray tone mask here, the known gray tone mask that the structure that semi light transmitting part forms by Micropicture is arranged.For example, as shown in Figure 5, have: light shielding part 11a, the 11b corresponding with source/drain electrode; Transmittance section 12; And the semi light transmitting part corresponding with groove (tone portion) 13, semi light transmitting part 13 is the zones that formed shading graph 13a, this shading graph 13a is made of with the Micropicture below the resolving limit of exposure machine the LCD that uses gray tone mask.Usually, light shielding part 11a, 11b and shading graph 13a form by the film of the same thickness of the same material formation of chromium or chromium compound etc., for the resolving limit of exposure machine, in the exposure machine of step-by-step system, be about 3 μ m, in the exposure machine of mirror image projection pattern, be about 4 μ m for the LCD that uses gray tone mask.Therefore, for example, make the gap length that sees through the 13b of portion in the semi light transmitting part 13 of Fig. 5 less than the live width of 3 μ m, shading graph 13a less than 3 μ m below the resolving limit of exposure machine.
Semi light transmitting part for above-mentioned Micropicture type, in the design of tone part, specifically, following selection is arranged: the Micropicture that is used to obtain the shadow tone effect between light shielding part and the transmittance section is made line and air gap type, still made point (site) type or make other figure, and, under the situation of online and air gap type, must consider that following very many aspects design: how many live widths is made as, how much the ratio of the part of light transmission and the part of blocking is made as, the transmitance of integral body is designed to which kind of degree etc.In addition, in the manufacturing of mask, the management of central value of live width and the deviation management and the highly difficult production technology of the live width in the mask have also been required.
Therefore, in the past, the part that has proposed to want to carry out halftone exposure was made the technology of semipermeable shadow tone film (semi-transparent film).By using this shadow tone film, can reduce the exposure of shadow tone part, carry out halftone exposure.By changing to the shadow tone film, in design,,, also need only film kind or the thickness of selecting the shadow tone film for mask as long as how many whole transmitances of research need reach, just can production mask.Therefore, in mask is made,, manage than being easier to as long as carry out the film thickness monitoring of shadow tone film.In addition, if the shadow tone film then can easily carry out composition by photoetching process, even therefore complicated graphics shape, also can be accomplished.
The manufacture method of the gray tone mask of the shadow tone membranous type that was in the past proposed is as follows.Here, as an example, enumerate the figure 100 that LCD substrate as shown in Figure 6 uses and describe.Figure 100 is by constituting with the lower part: the light shielding part figure 101 that is made of figure 101a, 101b; Semi light transmitting part figure 103 between figure 101a, the 101b of this light shielding part; And the transmittance section figure 102 that around these figures, forms.
At first, prepare on transparency carrier, to have formed successively the mask (mask blank) of semi-transparent film and photomask, on this mask, form etchant resist.Then, carry out graphic depiction, development, on the zone corresponding, form resist pattern thus with the light shielding part figure 101 of above-mentioned figure 100 and semi light transmitting part figure 103.Then,, remove the photomask in the zone corresponding and the semi-transparent film of lower floor thereof, form the figure shown in Fig. 7 (1) with the transmittance section figure 102 that does not form above-mentioned resist pattern by carrying out etching with proper method.That is, formed transmittance section 202, simultaneously, formed the shading graph 201 in the zone corresponding with the light shielding part of above-mentioned figure 100 and semi light transmitting part.After removing residual resist pattern, on substrate, form etchant resist once more, carry out graphic depiction, development, specifically form resist pattern in the zone corresponding with the light shielding part figure 101 of above-mentioned figure 100.Then, by suitable etching, only remove the photomask in the semi light transmitting part zone that does not form resist pattern.Thereby, shown in Fig. 7 (2), form and above-mentioned figure 100 graphs of a correspondence.That is, form the semi light transmitting part that the figure 203 by semi-transparent film constitutes, simultaneously, formed figure 201a, the 201b of light shielding part.
But, according to so existing gray tone mask manufacture method, there is following problems: photomask and semi-transparent film (are for example for example being used the principal ingredient identical materials, chromium and chromium compound etc.) situation under, the etching characteristic of photomask and semi-transparent film is approximate, so in the 2nd time above-mentioned photo-mask process, when only removing the photomask in zone of semi light transmitting part by etching, be difficult to judge etched terminal point, if undercut, residual photomask on semi-transparent film then is if etching is excessive, the film that then causes semi-transparent film reduces, in any case also can not get desired semi-transparency.Therefore, photomask and semi-transparent film need be selected the combination of the different material of etching characteristic at least, and the scope that material is selected is restricted.And even photomask and semi-transparent film have been selected the combination of the different material of etching characteristic, the film that prevents above-mentioned semi-transparent film surely fully that also differs reduces.
Following content is disclosed in following patent documentation 1: in the 2nd time above-mentioned photo-mask process, when only removing the photomask in zone of semi light transmitting part by etching, for the film of the semi-transparent film that prevents lower floor reduces, between semi-transparent film on the transparency carrier in mask and the photomask etching block film is set.Record as patent documentation 1, by between semi-transparent film on the transparency carrier in employed mask and the photomask etching block film being set, even the etching to the photomask in semi light transmitting part zone is carried out more or less excessively, can prevent that still the film of the semi-transparent film of lower floor from reducing.But the layer structure of employed mask is semi-transparent film, etching block film and photomask 3 layers, and film forming needs 3 stages, brings pressure to manufacturing cost.And also have following problems: because whole thickness thickening, so length breadth ratio (ratio of dimension of picture and height) becomes big, consequently, the graphics shape of light shielding part or pattern precision variation and etching period are elongated.And, behind the etching photomask, when removing residual etching block film, the problem that the film of the semi-transparent film below still occurring reduces.Even if the residual material that has transmitance that the etching block film can double light-transmissive film yet to impact, then can not remove and directly keep, but the material of etching block film or thickness are restricted.
As the gray tone mask that can solve such problem points, by the applicant following gray tone mask has been proposed before this: light shielding part by be arranged on the transparency carrier photomask and thereon the semi-transparent film of film forming form, semi light transmitting part forms (Japanese Patent Application 2004-65115) by the semi-transparent film of institute's film forming on the transparency carrier that has exposed the zone corresponding with semi light transmitting part.
As the manufacture method of this gray tone mask, for example, can make by the following method.
At first, prepare on transparency carrier, to have formed the mask of photomask.
Then, on the aforementioned mask version, form the resist pattern in the zone corresponding with above-mentioned light shielding part, with this resist pattern as mask, the photomask that etching is exposed, form the photomask figure thus, the transparency carrier in the zone corresponding with above-mentioned semi light transmitting part and transmittance section is exposed.
Then, remove resist pattern residual in above-mentioned steps, on whole on the substrate that obtains, form semi-transparent film.
And, form resist pattern in the zone corresponding with above-mentioned light shielding part and semi light transmitting part, as mask, the semi-transparent film that etching is exposed forms the transmittance section thus with this resist pattern.
In addition, can also make by the following method.
That is, form the resist pattern in the zone corresponding with above-mentioned light shielding part and transmittance section on the aforementioned mask version, as mask, the photomask that etching is exposed makes the transparency carrier in the zone corresponding with above-mentioned semi light transmitting part expose thus with this resist pattern.
Then, remove resist pattern residual in above-mentioned steps, on whole on the substrate that obtains, form semi-transparent film.
Then, form resist pattern in the zone corresponding with above-mentioned light shielding part and semi light transmitting part, as mask, semi-transparent film and photomask that etching is exposed form transmittance section and light shielding part thus with this resist pattern.
According to above-mentioned gray tone mask, semi light transmitting part is directly to form semi-transparent film to form on the transparency carrier that the zone corresponding with semi light transmitting part exposed, therefore when as in the past, forming semi light transmitting part, the photomask that need not only to remove by etching the upper strata exposes the semi-transparent film of lower floor, but also can form photomask and semi-transparent film by the identical or approximate membrane material of etching characteristic, so the range of choice of membrane material broadens.Therefore, need not the etching block film that between photomask and semi-transparent film, is provided with in the past, can make whole thickness attenuation, length breadth ratio is diminished.
[patent documentation 1] TOHKEMY 2002-189281 communique
[non-patent literature 1] " monthly magazine エ Off ピ one デ イ イ Application テ リ ジ エ Application ス (FPDIntelligence) ", in May, 1999, p.31-35.
But, above-mentioned, semi light transmitting part by the transparency carrier that the zone corresponding with semi light transmitting part exposed in the manufacture method of semi-transparent film formed gray tone mask of film forming, need carry out being used to form for 2 times the graphic depiction of resist pattern, therefore consider following way: when the 1st time figure forms, with common figure etching photomask be formed for the aliging mark of position of 2 graphic depictions similarly, carry out aligned in position based on this mark, carry out the 2nd time and describe.
Here, use Fig. 8 (a) and Fig. 8 (b) to be specifically described, go up the resist pattern 24a (Fig. 8 (a) (2)) that forms the zone corresponding at the mask (Fig. 8 (a) (1)) that forms by formation photomask 22 on transparency carrier 21 with light shielding part, with this resist pattern 24a as mask, the photomask 22 that etching is exposed, form photomask figure 22a thus, make transparency carrier 21 expose the zone corresponding (Fig. 8 (a) (3)) except that light shielding part with semi light transmitting part and transmittance section.
Then, remove resist pattern 24a residual in above-mentioned steps (Fig. 8 (a) (4)), on whole on the substrate that obtains, form semi-transparent film 23 (Fig. 8 (b) (5)).And, device figure portion has semi light transmitting part (illustrated A (d) zone), light shielding part (illustrated B (d) zone) and transmittance section (illustrated C (d) zone), and the marker graphic portion that aligned in position is used has light shielding part (illustrated B (m) zone) and transmittance section (illustrated C (m) zone).
Then, on whole on the substrate, form etchant resist 24 (Fig. 8 (b) (6)), describe, develop, so that making the transmittance section The corresponding area (C (d) zone) of device figure portion exposes, form resist pattern 24b (Fig. 8 (b) (7)), as mask, the semi-transparent film 23 of the device figure transmittance section that etching is exposed forms transmittance section (Fig. 8 (b) (8)) thus with this resist pattern 24b.
By removing residual resist pattern 24b, obtain being formed with the gray tone mask 20A (Fig. 8 (b) (9)) of device figure and marker graphic.And (a) among Fig. 9 is that planimetric map, (b) of gray tone mask 20A is that marker graphic (M) sectional view, (c) partly that forms on the non-device figure zone of mask is the sectional view of device figure (D).And the device figure (D) shown in marker graphic among Fig. 9 (M) and the enlarged drawing is the one example.In addition, above-mentioned Fig. 8 (a) and Fig. 8 (b) are the figure that device figure and marker graphic schematically are shown, and are not and device figure shown in Figure 9 and marker graphic strict conformance.
But, when primary figure (photomask figure 22a) forms (Fig. 8 (a) (4)), though together form marker graphic with light shielding part (B (m) zone) and transmittance section (C (m) zone), but, also on the transmittance section of marker graphic, form semi-transparent film by the film forming of the semi-transparent film 23 that carries out at next step.If want based on this mark, use through light or reflected light and come certification mark, carry out aligned in position thus, carry out the 2nd time and describe (being used to form describing of resist pattern 24b), then the problem of Cun Zaiing is: when certification mark, owing on the light shielding part of marker graphic, be formed with semi-transparent film 23a and etchant resist 24, so the transmittance section and the contrast between the light shielding part of marker graphic are low, be difficult to identification marking, detect the change difficulty.That is, when passing through to see through the light certification mark, because semi-transparent film 23a and etchant resist 24 make the transmitance decay of the transmittance section of marker graphic, and diminishing through rate variance between the light shielding part of marker graphic, so the contrast step-down.And, by the reflected light certification mark time, because the transmittance section and the light shielding part of marker graphic form equal reflectivity, so the contrast step-down.
And, in gray tone mask, also same with common photomask, need in the non-device figure zone of mask, be formed for when mask uses and be transferred the various marks that substrate carries out the telltale mark etc. of aligned in position, in the common mask that is formed with the photomask figure, carry out etching by photomask and form mark non-device zone.But, in the above-mentioned gray tone mask, the problem that exists is: when mark dual-purpose of using with the aligned in position of above-mentioned graphic depiction or the mark that similarly formed other, the transmittance section of formed marker graphic is covered by semi-transparent film on the photomask in the non-device figure zone of mask, form semi light transmitting part (a-quadrant) (with reference to Fig. 8 (b) (9)), so when using through light and reflected light certification mark, contrast is low, detection becomes difficulty.
Summary of the invention
The present invention proposes in view of the above problems, its purpose is to provide gray tone mask and manufacture method thereof, the light shielding part of this gray tone mask is formed by the photomask and the film forming semi-transparent film thereon that are arranged on the transparency carrier, semi light transmitting part is formed by the semi-transparent film of film forming on the transparency carrier that exposes the zone corresponding with semi light transmitting part, wherein, the contrast height of the mark that forms in non-device figure zone detects easily.
In order to solve above-mentioned problem, the present invention has following structure.
The manufacture method of (structure 1) a kind of gray tone mask, this gray tone mask has formed the device figure with light shielding part, transmittance section and semi light transmitting part; And the marker graphic that is used for aligned in position, the manufacture method of this gray tone mask is characterised in that to have: the step of preparing to have formed at least the mask of photomask on transparency carrier; The light shielding part figure forms step, comprising following step: describe the 1st generating writing pattern, develop being used to form on the 1st etchant resist of light shielding part figure, form the 1st resist pattern, the 1st resist pattern as mask, is carried out etching to above-mentioned photomask; On the transparency carrier that has formed above-mentioned light shielding part figure, form the step of semi-transparent film; And the semi light transmitting part figure forms step, comprising following step: in order to form the semi light transmitting part figure, describing the 2nd generating writing pattern on formed the 2nd etchant resist on the above-mentioned semi-transparent film, develop, form the 2nd resist pattern, with the 2nd resist pattern as mask, above-mentioned semi-transparent film is carried out etching, wherein, form in the step at above-mentioned light shielding part figure, when forming the light shielding part figure, form desired marker graphic with light shielding part and transmittance section, before above-mentioned semi light transmitting part figure forms describing of the 2nd generating writing pattern in the step, has the step that does not have semi-transparent film in the transmittance section that makes in above-mentioned marker graphic.
(structure 2) is according to the manufacture method of structure 1 described gray tone mask, it is characterized in that, make and do not exist the step of semi-transparent film to be in the transmittance section in above-mentioned marker graphic, in forming the step of above-mentioned semi-transparent film, above-mentioned semi-transparent film is carried out the step of film forming in the part except the transmittance section of above-mentioned marker graphic at least.
(structure 3) is according to the manufacture method of structure 1 described gray tone mask, it is characterized in that, make not exist the step of semi-transparent film to be in the transmittance section in above-mentioned marker graphic, after forming above-mentioned semi-transparent film, remove the step of the semi-transparent film in the transmittance section of above-mentioned marker graphic at least.
(structure 4) is according to the manufacture method of any described gray tone mask in the structure 1 to 3, it is characterized in that, before above-mentioned semi light transmitting part figure forms describing of the 2nd generating writing pattern in the step, also the part except the transmittance section of marker graphic at least is coated with above-mentioned the 2nd etchant resist, perhaps, after forming above-mentioned the 2nd etchant resist, remove the 2nd etchant resist on the transmittance section of marker graphic at least, make that there is not above-mentioned the 2nd etchant resist in the transmittance section in above-mentioned marker graphic.
The manufacture method of (structure 5) a kind of gray tone mask, this gray tone mask has formed the device figure with light shielding part, transmittance section and semi light transmitting part; And the marker graphic that is used for aligned in position, the manufacture method of this gray tone mask is characterised in that to have: the step of preparing to have formed at least the mask of photomask on transparency carrier; The light shielding part figure forms step, comprising following step: describe the 1st generating writing pattern being used to form on the 1st etchant resist of light shielding part figure, develop, form the 1st resist pattern, the 1st resist pattern as mask, is carried out etching to above-mentioned photomask; On the transparency carrier that has formed above-mentioned light shielding part figure, form the step of semi-transparent film; And the semi light transmitting part figure forms step, comprising following step: in order to form the semi light transmitting part figure, describing the 2nd generating writing pattern on formed the 2nd etchant resist on the above-mentioned semi-transparent film, develop, form the 2nd resist pattern, with the 2nd resist pattern as mask, above-mentioned semi-transparent film is carried out etching, wherein, form in the step at above-mentioned light shielding part figure, when forming the light shielding part figure, formation has the desired marker graphic of light shielding part and transmittance section, before above-mentioned semi light transmitting part figure forms describing of the 2nd generating writing pattern in the step, at least the part except the transmittance section of marker graphic is coated with above-mentioned the 2nd etchant resist, perhaps, after forming above-mentioned the 2nd etchant resist, at least remove the 2nd etchant resist in the transmittance section of above-mentioned marker graphic, make not have above-mentioned the 2nd etchant resist in the transmittance section in above-mentioned marker graphic.
(structure 6) a kind of gray tone mask, formed device figure with light shielding part, transmittance section and semi light transmitting part, and the marker graphic that is used for aligned in position, it is characterized in that, above-mentioned light shielding part is formed by the photomask and the part or all of stacked semi-transparent film on it that are arranged on the transparency carrier, above-mentioned semi light transmitting part is formed by the semi-transparent film that is arranged on the transparency carrier, above-mentioned transmittance section is formed by the part of exposing transparency carrier, and above-mentioned marker graphic is formed with the transmittance section of exposing transparency carrier by the light shielding part that photomask constituted that only is arranged on the transparency carrier.
According to structure 1, the manufacture method of gray tone mask of the present invention has: the step of preparing to have formed at least the mask of photomask on transparency carrier; Above-mentioned light shielding part figure forms step; On the transparency carrier that has formed above-mentioned light shielding part figure, form the step of semi-transparent film; And above-mentioned semi light transmitting part figure forms step, form in the step at above-mentioned light shielding part figure, when forming the light shielding part figure, formation has the desired marker graphic of light shielding part and transmittance section, before above-mentioned semi light transmitting part figure forms describing of the 2nd generating writing pattern in the step, has the step that does not have semi-transparent film in the transmittance section that makes in above-mentioned marker graphic.
Therefore, carry out being used to form for 2 times the graphic depiction of resist pattern, when the 1st time figure forms, in the non-device figure zone of mask, be made like the mark of the position that the secondary image that is used to align describes with common figure (device figure), carrying out aligned in position based on this mark carries out the 2nd time and describes, in the case, because before describing for the 2nd time, make and in the transmittance section of above-mentioned mark, do not have semi-transparent film, so see through light and catoptrical contrast height between transmittance section in the marker graphic and the light shielding part, identification marking easily, the marker detection when therefore describing for the 2nd time is easy.And, in the gray tone mask that finally obtains, also owing to marker graphic is formed by light shielding part that photomask constituted and the transmittance section of exposing transparency carrier at least, so transmittance section in the marker graphic and the contrast height between the light shielding part, when using mask, be used for and be easy to detect mark when being transferred aligned in position between the substrate.
In addition, shown in structure 2, in the step that forms above-mentioned semi-transparent film, by above-mentioned semi-transparent film being carried out film forming in the part except the transmittance section of above-mentioned marker graphic at least, can before forming describing of the 2nd generating writing pattern in the step, above-mentioned semi light transmitting part figure make not have semi-transparent film in the transmittance section of above-mentioned marker graphic at least.Thus, mark see through light and catoptrical contrast uprises, it is easy that the marker detection during aligned in position becomes.As except the part of the transmittance section of above-mentioned marker graphic above-mentioned semi-transparent film being carried out the method for film forming at least, the shading member that for example can enumerate the transmittance section by covering above-mentioned marker graphic at least carries out the method for film forming to above-mentioned semi-transparent film.
In addition, shown in structure 3, after forming above-mentioned semi-transparent film, at least remove the semi-transparent film in the transmittance section of above-mentioned marker graphic, can before forming describing of the 2nd generating writing pattern in the step, above-mentioned semi light transmitting part figure make in the transmittance section of above-mentioned marker graphic, not have semi-transparent film at least thus.Thus, mark see through light and catoptrical contrast uprises, it is easy that the marker detection during aligned in position becomes.
In addition, shown in structure 4, by the part except the transmittance section of marker graphic at least is coated with above-mentioned the 2nd etchant resist, perhaps, after forming above-mentioned the 2nd etchant resist, at least remove the 2nd etchant resist in the transmittance section of marker graphic, can before above-mentioned semi light transmitting part figure forms describing of the 2nd generating writing pattern in the step, make in the transmittance section of above-mentioned marker graphic, not have above-mentioned the 2nd etchant resist.Thus, not only in the transmittance section of above-mentioned marker graphic, there is not semi-transparent film as described above at least, also there is not the 2nd etchant resist, so transparency carrier exposes in the transmittance section of marker graphic, having suppressed the caused transmitance of etchant resist reduces, can obtain to see through light and catoptrical higher contrast between the light shielding part of marker graphic and the transmittance section, the easier identification marking that becomes, the marker detection when therefore describing for the 2nd time is more easy.
And according to structure 5, the manufacture method of gray tone mask of the present invention has: the step of preparing to have formed at least the mask of photomask on transparency carrier; Above-mentioned light shielding part figure forms step; On the transparency carrier that has formed above-mentioned light shielding part figure, form the step of semi-transparent film; And above-mentioned semi light transmitting part figure forms step, form in the step at above-mentioned light shielding part figure, when forming the light shielding part figure, formation has the desired marker graphic of light shielding part and transmittance section, before above-mentioned semi light transmitting part figure forms describing of the 2nd generating writing pattern in the step, at least the part except the transmittance section in the above-mentioned marker graphic is coated with above-mentioned the 2nd etchant resist, perhaps, after forming above-mentioned the 2nd etchant resist, at least remove the 2nd etchant resist in the transmittance section of above-mentioned marker graphic, make in the transmittance section of above-mentioned marker graphic, not have above-mentioned the 2nd etchant resist.
Thus, because in the transmittance section of above-mentioned marker graphic at least, do not have the 2nd etchant resist, so can suppress the transmitance of the transmittance section of the caused marker graphic of the 2nd etchant resist reduces, therefore compare with in the transmittance section of marker graphic, there being the situation of the 2nd etchant resist, improved and see through light and catoptrical contrast, the marker detection when describing for the 2nd time becomes easier.
And, shown in structure 6, in gray tone mask of the present invention, the light shielding part of device figure forms by being arranged at photomask on the transparency carrier and part or all of stacked semi-transparent film thereon, semi light transmitting part is formed by semi-transparent film, the transmittance section is formed by the part of exposing transparency carrier, and marker graphic is formed by light shielding part that photomask constituted and the transmittance section of exposing transparency carrier at least, so see through light and catoptrical contrast height between transmittance section in the marker graphic and the light shielding part, when using mask, be used for and be easy to detect mark when being transferred aligned in position between the substrate.
And, shown in structure 7, in gray tone mask version of the present invention, forming semi-transparent film on the formed photomask figure on the transparency carrier, above-mentioned photomask figure comprises the marker graphic that is used for aligned in position, be formed with semi-transparent film in the zone except above-mentioned marker graphic at least, so using this gray tone mask version, when on the gray tone mask version, describing after the formation etchant resist, carry out under the situation of aligned in position based on above-mentioned aligned in position mark, because in the transmittance section of above-mentioned mark, do not form semi-transparent film, so transmittance section in the mark and the contrast height between the light shielding part, therefore the easy identification marking that becomes carries out marker detection easily.And, in the gray tone mask that finally obtains, marker graphic is also formed by formed light shielding part of photomask and the transmittance section of exposing transparency carrier at least, so transmittance section in the marker graphic and the contrast height between the light shielding part, when using mask, be used for and be easy to detect mark when being transferred aligned in position between the substrate.
Manufacture method according to gray tone mask of the present invention, carry out being used to form for 2 times the graphic depiction of resist pattern, when the 1st time figure forms, in the non-device figure zone of mask, with common figure (device figure) similarly be formed for the aliging mark of the position that secondary image describes, carry out aligned in position based on this mark, carrying out the 2nd time describes, in the case, because before describing for the 2nd time, make in the transmittance section of above-mentioned mark, not have semi-transparent film, so the contrast height of mark is easy to detect mark when describing for the 2nd time.
In addition, manufacture method according to gray tone mask of the present invention, carry out being used to form for 2 times the graphic depiction of resist pattern, when the 1st time figure forms, in the non-device figure zone of mask, with common figure (device figure) similarly be formed for the aliging mark of the position that secondary image describes, carry out aligned in position based on this mark, and carry out the 2nd time and describe, in the case, because before describing for the 2nd time, make in the transmittance section of above-mentioned mark, not have etchant resist, so the contrast height of mark is easy to detect mark when describing for the 2nd time.
In addition, according to gray tone mask of the present invention, light shielding part forms by being arranged at photomask on the transparency carrier and part or all of stacked semi-transparent film thereon, semi light transmitting part is formed by semi-transparent film, the transmittance section is formed by the part of exposing transparency carrier, wherein, form in non-device figure zone, the marker graphic of various marks that is used for when being used to use mask and is transferred the telltale mark etc. of the aligned in position between the substrate is formed by the light shielding part and the transmittance section of exposing transparency carrier at least, this light shielding part is made of photomask, so when certification mark, the contrast height of mark, detect easily.
Description of drawings
Fig. 1 (a) is the constructed profile of manufacturing process of the gray tone mask of expression embodiments of the present invention 1.
Fig. 1 (b) is the constructed profile of manufacturing process (continuity of the manufacturing process of Fig. 1 (a)) of the gray tone mask of expression embodiments of the present invention 1.
Fig. 2 is the constructed profile of manufacturing process of the gray tone mask of expression embodiments of the present invention 2.
Fig. 3 is the constructed profile of manufacturing process of the gray tone mask of expression embodiments of the present invention 3.
Fig. 4 (a) is the constructed profile that the TFT substrate manufacturing process of gray tone mask has been used in expression.
Fig. 4 (b) is the constructed profile that the TFT substrate manufacturing process (continuity of the manufacturing process of Fig. 4 (a)) of gray tone mask has been used in expression.
Fig. 5 is the planimetric map of an example of the gray tone mask of expression Micropicture type.
Fig. 6 is the planimetric map of an example of the gray tone mask figure of expression shadow tone membranous type.
Fig. 7 is the mask graph planimetric map of manufacture method that is used to illustrate the gray tone mask of shadow tone membranous type.
Fig. 8 (a) is the constructed profile of an example of the manufacturing process of expression gray tone mask.
Fig. 8 (b) is the constructed profile of an example (continuity of the manufacturing process of Fig. 8 (a)) of the manufacturing process of expression gray tone mask.
Fig. 9 (a) is that planimetric map, (b) of gray tone mask 20A is that marker graphic (M) sectional view, (c) partly that forms in the non-device figure zone of mask is the sectional view of device figure (D).
Embodiment
Below, the present invention is described in detail by embodiment.
(embodiment 1)
Fig. 1 (a) and Fig. 1 (b) are the embodiments 1 of the manufacture method of expression gray tone mask of the present invention, are the constructed profiles of representing its manufacturing process in order.
Shown in Fig. 1 (a) (1), employed mask is to obtain by form photomask 22 on the transparency carrier 21 of quartz glass etc. in the present embodiment.
Here,, preferably can obtain the film of high light-proofness, for example can list Cr, Si, W, Al etc. as the material of photomask 22.
In addition, the aforementioned mask version forms by form photomask 22 on transparency carrier 21, and its film build method can select vapour deposition method, sputtering method, CVD (chemical vapor deposition) method etc. to be suitable for the method for film kind.In addition, have no particular limits, as long as form according to being optimized for the thickness that can obtain good light-proofness about thickness.
Shown in Fig. 1 (b) (9), the gray tone mask 20B of the present embodiment that use aforementioned mask version obtains is formed with device figure and marker graphic.Device figure has semi light transmitting part (illustrated A (d) zone), light shielding part (illustrated B (d) zone) and transmittance section (illustrated C (d) zone), and the marker graphic that aligned in position is used has light shielding part (illustrated B (m) zone) and transmittance section (illustrated C (m) zone).The light shielding part of device figure is to be formed by the photomask 22a and the semi-transparent film 23 on it that are arranged on the transparency carrier 21, and semi light transmitting part is formed by the semi-transparent film 23 of film forming on transparency carrier 21, and the transmittance section is formed by the part of exposing transparency carrier 21.And marker graphic is formed in the non-device figure zone of mask, is formed by the photomask 22a that is arranged on the transparency carrier 21 light shielding part that is constituted and the transmittance section of exposing transparency carrier 21.Said apparatus figure and marker graphic are that marker graphic (M) and the device figure (D) shown in the enlarged drawing among for example above-mentioned Fig. 9 is such in planimetric map.But, in Fig. 1 of present embodiment (a) and Fig. 1 (b), schematically show device figure and marker graphic, not with device figure and marker graphic strict conformance shown in Figure 9.
The manufacturing process of the gray tone mask 20B that has used the aforementioned mask version then, is described.
At first, go up the eurymeric resist that usefulness is for example described in coating, cure, form etchant resist, use electron beam drawing machine or laser to describe machine etc. and describe at this mask (Fig. 1 (a) (1)).If the situation with for example above-mentioned device figure shown in Figure 9 (D) is an example, this moment describe the transmittance section graph of a correspondence data that data are marker graphics of using with wherein semi light transmitting part figure (a-quadrant) and transmittance section (C zone) graph of a correspondence data and with aligned in position.After describing, it is developed, on mask, form resist pattern 24a, this resist pattern 24a is in the semi light transmitting part that forms device figure and the zone (zone of A (d) shown in Fig. 1 (a) and C (d)) of transmittance section, and removed etchant resist in the zone (zone of the C (m) shown in Fig. 1 (a)) of the transmittance section of formation marker graphic, in the zone (zone of the B (d) shown in Fig. 1 (a)) of the light shielding part that forms device figure, and residual etchant resist (with reference to Fig. 1 (a) (2)) in the zone (zone of the B (m) shown in Fig. 1 (a)) of the light shielding part of formation marker graphic.
Then, with formed resist pattern 24a as mask, the photomask 22 that etching is exposed, the photomask figure 22a (with reference to Fig. 1 (a) (3)) that formation is corresponding with device figure and marker graphic light shielding part separately.In zone (A (d) and C (d) zone) corresponding and the zone (C (m) zone) corresponding with the transmittance section of marker graphic with the semi light transmitting part of device figure and transmittance section, by the etching of above-mentioned photomask 22, be in the state that following transparency carrier 21 exposes.Therefore, in this step, formed desired marker graphic with the light shielding part figure of device figure.
The ashing that use realizes by oxygen or the concentrated sulphuric acid wait removes residual resist pattern 24a (with reference to Fig. 1 (a) (4)).
Then, on the transparency carrier 21 that obtains as described above, double light-transmissive film 23 carries out film forming on the substrate with photomask figure 22a, obtains gray tone mask version (with reference to Fig. 1 (b) (5)).At this moment, double light-transmissive film 23 in shield 30 backs that covers the zone corresponding with the transmittance section of marker graphic by configuration at least carries out film forming, makes not form semi-transparent film 23 at least in the transmittance section of marker graphic.In the zone corresponding, directly on the transparency carrier 21 that exposes, form semi-transparent film 23 with the semi light transmitting part of device figure and transmittance section.
In addition, material as semi-transparent film 23, preferably be made as 100% o'clock, can obtain the semipermeable film of transmitance about 50%, can list for example Cr compound (oxide of Cr, nitride, oxides of nitrogen, fluoride etc.), MoSi, Si, W, Al etc. in transmitance with the transmittance section.Si, W, Al etc. can obtain high light-proofness or also can obtain semipermeable material according to its thickness.And transmitance refers to for the transmitance of for example large LCD that uses gray tone mask with the exposure light wavelength of exposure machine here.In addition, there is no need fully the transmitance of semi-transparent film is limited to about 50%.Which kind of degree is the permeability of semi light transmitting part be set to is the problem that designs.
In addition, the combination about the material of above-mentioned photomask 22 and semi-transparent film 23 is not particularly limited in the present invention.The etching characteristic of film each other can be identical or approximate, and perhaps, the etching characteristic of film each other also can be different.Promptly, in the present invention, by on the transparency carrier that has exposed the zone corresponding, directly forming semi-transparent film, form semi light transmitting part with semi light transmitting part, so be not particularly limited about membrane material, can select to make the combination of the identical or approximate material of the etching characteristic of photomask and semi-transparent film.For example, can select the combination of identical materials, principal ingredient identical materials (for example, Gr and Gr compound etc.) etc. arbitrarily, so the scope of selecting is wider.
For the film build method of semi-transparent film 23, identical with the situation of above-mentioned photomask 22, the method for selecting vapour deposition method, sputtering method, CVD (chemical vapor deposition) method etc. to be suitable for the film kind gets final product.In addition, have no particular limits, form and get final product according to being optimized for the thickness that can obtain desired semi-transparency about the thickness of semi-transparent film 23.
Then, the above-mentioned eurymeric resist of coating on whole is baked and banked up with earth once more, forms etchant resist 24 (with reference to Fig. 1 (b) (6)).
Then, carrying out the 2nd time describes.The data of describing of this moment are transmittance section (C (d) zone) graph of a correspondence data with device figure.In the 2nd time is described, form formed mark in the step (with reference to Fig. 1 (a) (4)) based on previous photomask figure 22a, for example shining, wavelength is the light of 413nm, detect its reflected light, carry out aligned in position, owing in the transmittance section of above-mentioned mark, do not form semi-transparent film 23, so transmittance section in the mark and the contrast height between the light shielding part, easy identification marking, the marker detection when therefore describing for the 2nd time is easy to.And, though in the transmittance section of mark, be formed with etchant resist 24 because the transmitance of the location light that etchant resist is used for aligned in position is than higher, thus can by and the light shielding part of the mark that forms of photomask 22a between relation obtain high-contrast.
After describing, it is developed, form resist pattern 24b, this resist pattern 24b removes etchant resist, forms (with reference to Fig. 1 (b) (7)) at remaining regional residual etchant resist in the transmittance section of device figure.
Then, formed resist pattern 24b as mask, is removed the semi-transparent film 23 in the zone of the transmittance section that becomes device figure by dry-etching.Thus, the semi light transmitting part and the transmittance section of handle assembly figure distinguish, thereby form semi light transmitting part (A (d) zone) and transmittance section (C (d) zone) (with reference to Fig. 1 (b) (8)) of device figure.
In addition, residual resist pattern 24b uses the oxygen ashing to wait to remove.
Thus, can obtain the gray tone mask 20B (with reference to Fig. 1 (b) (9)) of present embodiment.In the gray tone mask 20B that finally obtains, marker graphic portion is formed by the light shielding part (illustrated B zone) and the transmittance section (illustrated C zone) of exposing transparency carrier 21, this light shielding part is made of photomask 22a, so transmittance section in the marker graphic portion and the contrast height between the light shielding part, when using mask, be used for and when being transferred aligned in position between the substrate, the detection of mark is easy.
In addition, in the present embodiment by the configuration shield, make and do not form semi-transparent film in the transmittance section of marker graphic at least, but also can use film (for example etchant resist) by covering with band or cover in the adhesion of the transmittance section of marker graphic at least, after double light-transmissive film carries out film forming, remove above-mentioned covering and use film, make thus not form semi-transparent film in the transmittance section of marker graphic at least with being with or covering.
(embodiment 2)
Fig. 2 is the figure of embodiment 2 of the manufacture method of expression gray tone mask of the present invention, is the constructed profile of representing the part of its manufacturing process successively.
In the present embodiment, step till the mask that has formed photomask 22 on the transparency carrier 21 forms predetermined photomask figure 22a is identical to the step of (4) with Fig. 1 (a) of above-mentioned embodiment 1 (1) up to using, and illustrates and repeat specification so omit here.
On the transparency carrier 21 that obtains as described above, double light-transmissive film 23 carries out film forming (with reference to Fig. 2 (5)) on whole on the substrate with photomask figure 22a.
Then, on whole, be coated with above-mentioned eurymeric resist once more, bake and bank up with earth, on above-mentioned semi-transparent film 23, form etchant resist, this etchant resist is described, developed, be used to make the transmittance section (C (m) zone) of above-mentioned at least marker graphic to expose, thereby form resist pattern 24c (with reference to Fig. 2 (6)).In addition, consider the position deviation of describing in this case, as shown, also surplus can be set, feasible big slightly zone, transmittance section (C (m) zone) of exposing than marker graphic.Then, with this resist pattern 24c as mask, etching and remove the semi-transparent film 23 (with reference to Fig. 2 (7)) that forms in the transmittance section of marker graphic.
Then, remove residual resist pattern 24c, on whole, be coated with above-mentioned eurymeric resist afterwards once more, bake and bank up with earth, form etchant resist 24 (with reference to Fig. 2 (8)).
Then, carrying out the 2nd device figure describes.The data of describing of this moment are transmittance section (C (d) zone) graph of a correspondence data with device figure, but when this is described, remove semi-transparent film 23 by prior etching, there is not semi-transparent film 23 in transmittance section at the mark that is used to carry out aligned in position, so easy identification marking, the marker detection when describing is easy.In addition, in the present embodiment, though also be formed with etchant resist 24 in the transmittance section of mark, by and the light shielding part of the mark that forms by photomask 22a between relation, can obtain high-contrast.
After describing, it is developed, form resist pattern 24b, this resist pattern 24b removes etchant resist, forms (with reference to Fig. 2 (9)) at remaining regional residual etchant resist in the transmittance section of device figure.
Then, with formed resist pattern 24b as mask, remove the semi-transparent film 23 in the zone of the transmittance section that becomes device figure by dry-etching, the semi light transmitting part and the transmittance section of device figure are distinguished, thus semi light transmitting part (A (d) zone) and transmittance section (C (d) zone) (with reference to Fig. 2 (10)) of formation device figure.
In addition, residual resist pattern 24b uses the oxygen ashing to wait to remove.
Thus, can obtain the gray tone mask 20C (with reference to Fig. 2 (11)) of present embodiment.In the gray tone mask 20C of resulting present embodiment, also form by the light shielding part (illustrated B zone) and the transmittance section (illustrated C zone) of exposing transparency carrier 21 because of marker graphic portion, this light shielding part is formed by photomask 22a and the semi-transparent film 23 on it, and uprising through light and catoptrical contrast between transmittance section in the marker graphic portion and the light shielding part, when using mask, carry out and when being transferred aligned in position between the substrate, the detection of mark is easy.
In addition, in the present embodiment, with resist pattern 24c as mask, etching and remove the semi-transparent film 23 that forms in the transmittance section of marker graphic, but also can not form resist pattern 24c, and the section processes that the wiping by utilizing etching solution etc. are carried out is removed the semi-transparent film that forms in the transmittance section of marker graphic.
(embodiment 3)
Fig. 3 is the embodiment 3 of the manufacture method of expression gray tone mask of the present invention, is the constructed profile of representing the part of its manufacturing process successively.
In the present embodiment, step till the mask that has formed photomask 22 on the transparency carrier 21 forms predetermined photomask figure 22a is identical to (4) with Fig. 1 (a) of above-mentioned embodiment 1 (1) up to using, and illustrates and repeat specification so omit here.
On the transparency carrier 21 that obtains as described above, double light-transmissive film 23 carries out film forming (with reference to Fig. 3 (5)) on whole on the substrate with photomask figure 22a.
Then, on whole, be coated with above-mentioned eurymeric resist once more, form etchant resist 24 (with reference to 3 (6)) afterwards, by the etchant resist that the transmittance section (C (m) zone) of removing at least at above-mentioned marker graphic forms, make that there is not above-mentioned etchant resist (with reference to 3 (7)) in the transmittance section in marker graphic.In addition, in order to make the transmittance section in marker graphic not have above-mentioned etchant resist 24, also can be by to forming above-mentioned etchant resist except the part in the zone, transmittance section of marker graphic is coated with at least.And, in the present embodiment, there is not above-mentioned etchant resist 24 in the transmittance section of marker graphic at least in order to make, can certainly make all not form etchant resist 24 on the whole as shown in the figure at the marker graphic that comprises light shielding part.
Then, with resist pattern 24d as mask, etching and remove the semi-transparent film 23 (with reference to Fig. 3 (8)) that exposes in marker graphic portion.Thus, the transmittance section in the marker graphic is in the state that transparency carrier 21 exposes at least.
Then, carrying out the 2nd time describes.The data of describing of this moment are transmittance section (C (d) zone) graph of a correspondence data with device figure.When this is described, remove semi-transparent film 23 by prior etching, there is not semi-transparent film 23 in the transmittance section of the marker graphic that is used to carry out aligned in position, nor has etchant resist, so exposed transparency carrier 21.Therefore, obtained the light shielding part of marker graphic and the higher contrast between the transmittance section, easier identification marking, the marker detection when therefore describing for the 2nd time becomes easier.
After describing, it is developed, form resist pattern 24e, this resist pattern 24e removes etchant resist, forms (with reference to Fig. 3 (9)) at remaining regional residual etchant resist of device figure in the transmittance section of device figure.
Then, with formed resist pattern 24e as mask, remove the semi-transparent film 23 in the zone of the transmittance section that becomes device figure by dry-etching, the semi light transmitting part and the transmittance section of device figure are distinguished, thus semi light transmitting part (A (d) zone) and transmittance section (C (d) zone) (with reference to Fig. 3 (10)) of formation device figure.In addition, the photomask 22a in the marker graphic exposes at this moment, thus estimate to have film minimizing to a certain extent, even but so also can obtain high-contrast, so be no problem.
In addition, residual resist pattern 24a uses the oxygen ashing to wait to remove.
Thus, can obtain the gray tone mask 20D (with reference to Fig. 3 (11)) of present embodiment.In the gray tone mask 20D of resulting present embodiment, also form by the light shielding part (illustrated B zone) and the transmittance section (illustrated C zone) of exposing transparency carrier 21 because of marker graphic portion, this light shielding part is made of photomask 22a, so transmittance section in the marker graphic portion and the contrast between the light shielding part uprise, when using mask, carry out and when being transferred aligned in position between the substrate, the detection of mark is easy.
In addition, when describing explicitly with above-mentioned embodiment 3, in the above-mentioned embodiment 1, in the step (Fig. 1 (b) (6)) of the etchant resist 24 that is formed for carrying out describing for the 2nd time, also on whole, form after the etchant resist 24, by removing the etchant resist of transmittance section (C (m) zone) formation at least at above-mentioned marker graphic, perhaps by the part coating except the zone, transmittance section of marker graphic is at least formed etchant resist, can make the transmittance section in marker graphic not have above-mentioned etchant resist, so when marker detection, can further improve contrast.
In addition, in the above-mentioned embodiment 2, in the step (Fig. 2 (8)) of the etchant resist 24 that the device figure that is formed for carrying out the 2nd time is described, also on whole, form after the etchant resist 24, by removing the etchant resist of transmittance section (C (m) zone) formation at least at above-mentioned marker graphic, perhaps by the part coating except the zone, transmittance section of marker graphic is at least formed etchant resist, can make the transmittance section in marker graphic not have above-mentioned etchant resist, so when marker detection, can further improve contrast.
In addition, in embodiment 3, removed the semi-transparent film 23 that is exposed in the marker graphic portion, even but under the situation of not removing semi-transparent film 23,, compare with the situation of not removing etchant resist 24 if removed etchant resist 24, also can improve contrast.
In addition, formation method as device figure portion, be not limited to the embodiment of above explanation, for example also can be following method: describe by the 1st time, on the aforementioned mask version, form the resist pattern in the zone corresponding with the light shielding part of device figure and transmittance section, with this resist pattern as mask, the photomask that etching is exposed, make that thus the transparency carrier in the zone corresponding with the semi light transmitting part of device figure exposes, after removing resist pattern, double light-transmissive film carries out film forming on whole on the substrate, describe by the 2nd time again, form etched figure in the zone corresponding with above-mentioned light shielding part and semi light transmitting part, with this resist pattern as mask, the semi-transparent film and the photomask of the above-mentioned transmittance section that etching is exposed form transmittance section and light shielding part thus.
In addition, in the embodiment described above, illustration use the situation of eurymeric resist, but also can use negative resist.In this case, can only be to describe data reversal, and with identical ground of above-mentioned steps implementation step.
Claims (6)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005042113 | 2005-02-18 | ||
| JP2005042113A JP4587837B2 (en) | 2005-02-18 | 2005-02-18 | Gray tone mask manufacturing method and gray tone mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1821867A CN1821867A (en) | 2006-08-23 |
| CN100590522C true CN100590522C (en) | 2010-02-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610008320A Active CN100590522C (en) | 2005-02-18 | 2006-02-17 | Gray tone mask manufacturing method and gray tone mask |
Country Status (4)
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|---|---|
| JP (1) | JP4587837B2 (en) |
| KR (1) | KR101036438B1 (en) |
| CN (1) | CN100590522C (en) |
| TW (1) | TWI292078B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4809752B2 (en) * | 2006-11-01 | 2011-11-09 | 株式会社エスケーエレクトロニクス | Halftone photomask and method for manufacturing the same |
| JP5044262B2 (en) * | 2007-04-10 | 2012-10-10 | 株式会社エスケーエレクトロニクス | Multi-tone photomask and manufacturing method thereof |
| JP5220100B2 (en) * | 2007-05-11 | 2013-06-26 | エルジーイノテック株式会社 | Halftone mask having a plurality of semi-transmissive portions and manufacturing method thereof |
| TWI426343B (en) * | 2007-05-17 | 2014-02-11 | Lg Innotek Co Ltd | A half tone mask having multi-half permeation part and a method of manufacturing the same |
| KR101049939B1 (en) * | 2008-02-15 | 2011-07-15 | 피에스케이 주식회사 | Substrate manufacturing method |
| KR101077355B1 (en) | 2009-10-27 | 2011-10-26 | 주식회사 피케이엘 | Method for fabricating multi transmission modulation photomask |
| JP2011215197A (en) * | 2010-03-31 | 2011-10-27 | Hoya Corp | Photomask and method for manufacturing the same |
| CN103513508B (en) * | 2012-06-20 | 2016-08-10 | 欣兴电子股份有限公司 | Gray-scale photomask and manufacturing method, and trench formation method with gray-scale photomask |
| JP5635577B2 (en) * | 2012-09-26 | 2014-12-03 | Hoya株式会社 | Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method |
| JP6117559B2 (en) * | 2013-02-05 | 2017-04-19 | 株式会社エスケーエレクトロニクス | Photomask and method for manufacturing the photomask |
| JP2015106001A (en) * | 2013-11-29 | 2015-06-08 | Hoya株式会社 | Method for manufacturing photomask, method for transferring pattern, and method for manufacturing display device |
| JP2015212720A (en) * | 2014-05-01 | 2015-11-26 | Hoya株式会社 | Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05188578A (en) * | 1992-01-08 | 1993-07-30 | Seiko Epson Corp | Photomask and method for manufacturing semiconductor device |
| JP3110855B2 (en) * | 1992-04-22 | 2000-11-20 | 株式会社東芝 | Method of manufacturing projection exposure substrate and pattern forming method using this substrate |
| JPH06250376A (en) * | 1993-02-23 | 1994-09-09 | Toppan Printing Co Ltd | Phase shift mask and production of phase shift mask |
| JPH08123007A (en) * | 1994-10-18 | 1996-05-17 | Fujitsu Ltd | Phase shift reticle |
| KR0165402B1 (en) * | 1995-05-31 | 1999-03-20 | 김광호 | Phase inversion mask and manufacturing method thereof |
| KR0156148B1 (en) * | 1995-07-05 | 1998-12-01 | 문정환 | Fabrication method of semiconductor device |
| KR100215850B1 (en) * | 1996-04-12 | 1999-08-16 | 구본준 | Half-tone phase shift mask and fabrication method thereof |
| US5786114A (en) * | 1997-01-10 | 1998-07-28 | Kabushiki Kaisha Toshiba | Attenuated phase shift mask with halftone boundary regions |
| JP3446943B2 (en) * | 1998-09-21 | 2003-09-16 | 大日本印刷株式会社 | Phase shift mask having alignment mark for drawing |
| WO2000045222A1 (en) * | 1999-01-27 | 2000-08-03 | Citizen Watch Co., Ltd. | Photolithography mask and method of manufacturing thereof |
| JP3715189B2 (en) * | 2000-09-21 | 2005-11-09 | 株式会社ルネサステクノロジ | Phase shift mask |
| TWI286663B (en) * | 2003-06-30 | 2007-09-11 | Hoya Corp | Method for manufacturing gray tone mask, and gray tone mask |
| JP4521694B2 (en) * | 2004-03-09 | 2010-08-11 | Ｈｏｙａ株式会社 | Gray-tone mask and thin film transistor manufacturing method |
-
2005
- 2005-02-18 JP JP2005042113A patent/JP4587837B2/en not_active Expired - Lifetime
-
2006
- 2006-02-16 TW TW095105216A patent/TWI292078B/en active
- 2006-02-17 KR KR1020060015569A patent/KR101036438B1/en active Active
- 2006-02-17 CN CN200610008320A patent/CN100590522C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI292078B (en) | 2008-01-01 |
| KR101036438B1 (en) | 2011-05-23 |
| JP2006227365A (en) | 2006-08-31 |
| CN1821867A (en) | 2006-08-23 |
| TW200702899A (en) | 2007-01-16 |
| JP4587837B2 (en) | 2010-11-24 |
| KR20060093061A (en) | 2006-08-23 |
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