CN100587603C - Mask alignment mark and alignment method for lithography apparatus - Google Patents
Mask alignment mark and alignment method for lithography apparatus Download PDFInfo
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Abstract
本发明公开了一种掩模对准标记及对准方法。该掩模对准标记的部分结构与其它部分不一致,通常较长,能够提高标记分支进行对准扫描的捕获能力,提高粗扫描的成功率,能够提高对准扫描生成的对准信息的对比度,也提高对准处理过程中所采用信息的信噪比,从而提高掩模对准的精度。通过径向粗精扫描和切向旋转粗精扫描相结合生成莫尔条纹信息的方法,提高对准扫描的效率;通过相互垂直的两个方向上进行沿近似垂直于所用对准标记分支中光栅方向的粗精扫描相结合生成莫尔条纹信息的方法,提高对准扫描的效率。
The invention discloses a mask alignment mark and an alignment method. The partial structure of the mask alignment mark is inconsistent with other parts, usually longer, which can improve the capture ability of the mark branch for alignment scan, improve the success rate of rough scan, and improve the contrast of the alignment information generated by the alignment scan. It also improves the signal-to-noise ratio of the information used in the alignment process, thereby increasing the accuracy of the mask alignment. The method of generating moiré fringe information by combining radial coarse and fine scanning and tangential rotation coarse and fine scanning can improve the efficiency of alignment scanning; through two directions perpendicular to each other, the grating in the branch that is approximately perpendicular to the alignment mark used The method of generating moiré fringe information combined with rough and fine scanning in the direction improves the efficiency of alignment scanning.
Description
技术领域 technical field
本发明涉及光刻装置的对准技术,尤其涉及用于光刻装置的掩模对准标记及采用该对准标记的对准方法。The invention relates to an alignment technology of a lithography device, in particular to a mask alignment mark used for a lithography device and an alignment method using the alignment mark.
背景技术 Background technique
在工业装置中,由于高精度和高产能的需要,分布着大量高速实时信号采样、数据采集、信号实时处理系统。其中信号实时处理系统需要采用有效的信息处理模型和方法达到高精密、高效率的要求。有该需求的装置包括:集成电路制造光刻装置、液晶面板光刻装置、光掩模刻印装置、MEMS/MOEMS光刻装置、先进封装光刻装置、印刷电路板光刻装置、印刷电路板加工装置等。In industrial devices, due to the need for high precision and high productivity, a large number of high-speed real-time signal sampling, data acquisition, and real-time signal processing systems are distributed. Among them, the real-time signal processing system needs to adopt effective information processing models and methods to meet the requirements of high precision and high efficiency. Devices with this requirement include: integrated circuit manufacturing lithography device, liquid crystal panel lithography device, photomask marking device, MEMS/MOEMS lithography device, advanced packaging lithography device, printed circuit board lithography device, printed circuit board processing device etc.
在以前的上述装置中,为了实现掩模图形对工件台基准板上对准标记的对准,并生成高精度的对准扫描信息,需要有能够产生高精度对准扫描信息的掩模对准标记。In the previous above-mentioned devices, in order to realize the alignment of the mask pattern on the alignment mark on the workpiece table reference plate and generate high-precision alignment scan information, it is necessary to have a mask alignment capable of generating high-precision alignment scan information mark.
现有的对准标记,要么捕获能力较差,需要在掩模上增加辅助的掩模对准标记,并增加较多的对准扫描方式,进行逐级捕获,从而降低了对准效率;要么单个对准标记的信号对比度不高,用虚拟的数字处理方法虽然能够提高信号对比度,但同时也同步放大了噪声水平,并不能从物理上提高信噪比,从而限制了对准重复精度的提高。The existing alignment marks, either have poor capture ability, need to add auxiliary mask alignment marks on the mask, and add more alignment scanning methods to perform step-by-step capture, thereby reducing the alignment efficiency; or The signal contrast of a single alignment mark is not high. Although the virtual digital processing method can improve the signal contrast, it also simultaneously amplifies the noise level and cannot physically improve the signal-to-noise ratio, thus limiting the improvement of alignment repeatability. .
发明内容 Contents of the invention
本发明所解决的技术问题在于提供一种提高对准扫描的捕获能力和对准信息的对比度的掩模对准标记,以及用所提供的掩模对准标记进行掩模对准扫描,实现提高掩模对准标记空间像的捕获能力、对准精密度和对准效率的方法。The technical problem solved by the present invention is to provide a mask alignment mark that improves the capture ability of alignment scanning and the contrast of alignment information, and uses the provided mask alignment mark to perform mask alignment scanning to achieve improved Methods for mask alignment marker aerial image capture capability, alignment precision, and alignment efficiency.
为解决上述技术问题,本发明提供了一种掩模对准标记,分别置于掩模台的掩模上和工件台的基准板上,用于提供掩模光学对准,其中,所述的掩模对准标记包括第一、第二和第三对准标记分支,其中,第二对准标记分支呈方形透射孔状分布,第一和第三对准标记分支关于第二对准标记分支互为旋转90°替换,且第一和第三对准标记分支分别由第一、第二和第三光栅标记结构沿与光栅垂直方向并排构成,其中第一和第三光栅标记结构完全相同,分布在第二光栅标记结构两侧,所述第一和第三光栅标记结构的长度与第二光栅标记结构的长度不同。In order to solve the above technical problems, the present invention provides a mask alignment mark, which is respectively placed on the mask of the mask stage and the reference plate of the workpiece stage to provide optical alignment of the mask, wherein the The mask alignment mark includes first, second and third alignment mark branches, wherein the second alignment mark branch is distributed in the shape of a square transmission hole, and the first and third alignment mark branches are related to the second alignment mark branch Rotate each other by 90°, and the first and third alignment mark branches are respectively composed of first, second and third grating mark structures arranged side by side along the direction perpendicular to the grating, wherein the first and third grating mark structures are exactly the same, Distributed on both sides of the second grating mark structure, the lengths of the first and third grating mark structures are different from the length of the second grating mark structure.
进一步地,第二光栅标记结构的长度是第一和第三光栅标记结构的1.2倍至100倍,或者第一和第三光栅标记结构的长度是第二光栅标记结构的1.2倍至100倍,且所述第一、第二和第三光栅标记结构中的栅被细分为三个细小光栅。较佳地,第二光栅标记结构的长度是第一和第三光栅标记结构的1.5倍、2倍、5倍、10倍、20倍或50倍;或者第一和第三光栅标记结构的长度是第二光栅标记结构的1.5倍、2倍、5倍、10倍、20倍或50倍。Further, the length of the second grating mark structure is 1.2 to 100 times that of the first and third grating mark structures, or the length of the first and third grating mark structures is 1.2 to 100 times that of the second grating mark structure, And the gratings in the first, second and third grating marking structures are subdivided into three fine gratings. Preferably, the length of the second grating mark structure is 1.5 times, 2 times, 5 times, 10 times, 20 times or 50 times that of the first and the third grating mark structure; or the length of the first and the third grating mark structure It is 1.5 times, 2 times, 5 times, 10 times, 20 times or 50 times of the second grating mark structure.
进一步地,工件台基准板上的掩模对准标记中对应第一、第三对准标记分支的所有光栅标记结构的占空比同掩模上的掩模对准标记中对应所有光栅标记结构的占空比不相等,而工件台基准板上和掩模上的掩模对准标记中第一、第三对准标记分支的所有光栅标记结构内部的细小光栅的占空比根据对准信号调制与测量要求确定。Further, the duty cycle of all the grating mark structures corresponding to the first and third alignment mark branches in the mask alignment mark on the workpiece table reference plate is the same as that corresponding to all the grating mark structures in the mask alignment mark on the mask The duty cycle of the gratings is not equal, while the duty cycle of the small gratings inside all the grating mark structures of the first and third alignment mark branches in the mask alignment marks on the workpiece table reference plate and the mask is based on the alignment signal Modulation and measurement requirements are defined.
本发明的另一解决方案是提供一种采用上述掩模对准标记进行光刻装置对准的方法,所述光刻装置具有一对准系统,该对准系统包括:辐射发生器、掩模图形照射窗口及其控制板、掩模、掩模台、掩模台位置探测器、投影系统、工件台及其工件台基准板标记、工件台位置探测器和辐射探测传感器;其中,掩模上包括曝光掩模图形和若干个掩模对准标记;掩模图形照射窗口及其控制板形成透射窗口,将辐射发生器产生的辐射透射到曝光掩模图形和掩模对准标记上,形成透射像;投影系统将该透射像投射形成空间像,并用工件台基准板标记下方的辐射探测传感器探测该空间像;辐射探测传感器检测空间像经过工件台基准板标记透射后的辐射信息,所述辐射信息包括辐射振幅强度信息、辐射能量信息、辐射相位信息中任意一种或者相位信息与其它两种信息的组合;掩模台位置探测器和工件台位置探测器分别探测对准扫描过程中的掩模台和工件台的空间位置;且工件台基准板上的掩模对准标记的第一对准标记分支的光栅结构垂直于工件台径向,第三对准标记分支的光栅结构平行于工件台径向;所述的光刻装置对准方法包括如下步骤:(1)用工件台基准板上的第二对准标记分支对掩模上对准标记的第二对准标记分支的空间像进行粗捕获扫描,得到掩模对准标记的大致位置;(2)用工件台基准板上的第一对准标记分支沿工件台径向对掩模上对应的对准标记分支的空间像进行粗扫描,得到两者间的径向粗对准位置用工件台基准板上的第一对准标记分支沿工件台径向对掩模上对应的对准标记分支的空间像进行粗扫描,得到两者间的径向粗对准位置;(3)通过径向精确对准位置计算,得到工件台基准板上的第三对准标记分支切向扫描中心点对应的切向扫描中心角度,通过旋转工件台基准板上的第三对准标记分支,对掩模上对应的对准标记分支的空间像沿切向进行粗扫描,得到工件台上第三对准标记分支和掩模上对应的对准标记分支间的切向粗对准位置夹角;(4)经过切向粗对准位置夹角调整后,以所述径向粗对准位置为工件台径向对准精扫描的中心位置,用工件台基准板上的第一对准标记分支沿径向对掩模上对应的对准标记分支的空间像进行精扫描,得到工件台上第一对准标记分支和掩模上对应的对准标记分支间的径向精确对准位置;(5)用所述径向粗对准位置计算并沿工件台径向调整第一对准标记分支,以所述切向粗对准位置夹角为工件台对准旋转扫描的中心夹角,旋转工件台基准板上的第三对准标记分支对掩模上对应的对准标记分支的空间像沿切向进行精扫描,得到工件台上第三对准标记分支和掩模上对应的对准标记分支间的切向精确对准位置夹角;(6)用步骤(4)和(5)所得到的径向精确对准位置和切向精确对准位置夹角进行综合,校正得到对准位置,得到掩模上的掩模对准标记的空间成像中心在工件台坐标系下的坐标位置;(7)重复步骤(1)~(6),得到掩模上若干个掩模对准标记在工件台坐标系下的空间对准坐标位置,用这些空间对准坐标位置校准光刻装置中曝光掩模图形空间像的中心位置在工件台坐标系下的坐标位置。Another solution of the present invention is to provide a method for aligning a lithography apparatus using the above-mentioned mask alignment marks, the lithography apparatus has an alignment system, and the alignment system includes: a radiation generator, a mask Graphic irradiation window and its control panel, mask, mask stage, mask stage position detector, projection system, workpiece stage and its reference plate mark of workpiece stage, workpiece stage position detector and radiation detection sensor; wherein, on the mask It includes an exposure mask pattern and several mask alignment marks; the mask pattern irradiation window and its control plate form a transmission window, which transmits the radiation generated by the radiation generator to the exposure mask pattern and mask alignment marks to form a transmission window. image; the projection system projects the transmission image to form an aerial image, and detects the aerial image with the radiation detection sensor under the mark on the workpiece table reference plate; The information includes any one of radiation amplitude intensity information, radiation energy information, radiation phase information or a combination of phase information and the other two kinds of information; the mask stage position detector and the workpiece stage position detector respectively detect the mask position during the alignment scanning process. The spatial position of the mold stage and the workpiece stage; and the grating structure of the first alignment mark branch of the mask alignment mark on the workpiece stage reference plate is perpendicular to the radial direction of the workpiece stage, and the grating structure of the third alignment mark branch is parallel to the workpiece The radial direction of the table; the method for aligning the lithographic apparatus comprises the following steps: (1) using the second alignment mark branch on the workpiece table reference plate to the aerial image of the second alignment mark branch of the alignment mark on the mask Perform a rough capture scan to obtain the approximate position of the mask alignment mark; (2) Use the first alignment mark branch on the workpiece table reference plate to perform an aerial image of the corresponding alignment mark branch on the mask along the radial direction of the workpiece table Rough scanning, to obtain the radial coarse alignment position between the two, use the first alignment mark branch on the workpiece table reference plate to perform rough scanning on the aerial image of the corresponding alignment mark branch on the mask along the radial direction of the workpiece table, to obtain The radial coarse alignment position between the two; (3) through the calculation of the radial precise alignment position, the tangential scanning center angle corresponding to the tangential scanning center point of the third alignment mark branch on the workpiece table reference plate is obtained, through Rotate the third alignment mark branch on the reference plate of the workpiece table, and roughly scan the spatial image of the corresponding alignment mark branch on the mask along the tangential direction, and obtain the third alignment mark branch on the workpiece table and the corresponding alignment mark branch on the mask. The included angle of the tangential coarse alignment position between the branches of the alignment mark; (4) after the adjustment of the included angle of the tangential coarse alignment position, the radial coarse alignment position is used as the center of the radial alignment fine scanning of the workpiece table position, use the first alignment mark branch on the workpiece table reference plate to fine-scan the aerial image of the corresponding alignment mark branch on the mask in the radial direction, and obtain the first alignment mark branch on the workpiece table and the corresponding alignment mark branch on the mask. (5) use the radial coarse alignment position to calculate and adjust the first alignment mark branch along the radial direction of the workpiece table, and use the tangential coarse alignment position The included angle is the center included angle of the workpiece table alignment rotation scanning, the third alignment mark branch on the reference plate of the rotating work table is opposite to the corresponding alignment mark branch on the mask The spatial image is finely scanned along the tangential direction to obtain the tangential precise alignment position angle between the third alignment mark branch on the workpiece table and the corresponding alignment mark branch on the mask; (6) use steps (4) and (5) The obtained radial precise alignment position and the angle between the tangential precise alignment position are synthesized, the alignment position is obtained by correction, and the spatial imaging center of the mask alignment mark on the mask is obtained in the workpiece table coordinate system (7) Repeat steps (1) to (6) to obtain the spatial alignment coordinate positions of several mask alignment marks on the mask in the workpiece table coordinate system, and use these spatial alignment coordinate positions to calibrate the light The coordinate position of the central position of the spatial image of the exposure mask pattern in the engraving device under the coordinate system of the workpiece table.
本发明的又一方案是提供一种采用上述掩模对准标记进行光刻装置对准的方法,包括如下步骤:(a)用工件台基准板上掩模对准标记中的第二对准标记分支对掩模上对准标记中的第二对准标记分支的空间像进行粗捕获扫描,运用扫描探测到的所述辐射信息和掩模位置信息及工件台位置信息进行计算,得到透射对准标记组合的粗中心位置;(b)用工件台基准板上第一对准标记分支沿垂直于它的方向对掩模上对应的对准标记分支的空间像进行单层或多层粗扫描,运用扫描探测到的所述辐射信息和掩模位置信息及工件台位置信息进行计算,得到工件台基准板上第一对准标记分支和掩模上对应的对准标记分支间的沿扫描方向的粗对准空间位置信息;(c)通过掩模和工件台基准板上的第一对准标记分支的粗对准位置计算,更新第三对准标记分支垂直扫描方向的中心位置,用工件台基准板第三对准标记分支对掩模上第三对准标记分支进行单层或多层粗扫描,运用扫描探测到的所述辐射信息和掩模第三对准标记分支及对应工件台基准板对准标记分支沿扫描方向上的位置信息进行计算,得到工件台基准板上第三对准标记分支和掩模上对应的对准标记分支间的沿扫描方向的粗对准空间位置信息;(d)以所述工件台基准板和掩模上第一与第三对准标记分支间的粗对准位置计算掩模上第一对准标记分支对应空间像的扫描中心位置,用工件台基准板上第一对准标记分支沿近似垂直于对准标记分支中对准光栅的方向对掩模上对应的对准标记分支的空间像进行精扫描,运用扫描探测到的所述辐射信息和掩模位置信息及工件台位置信息进行计算,得到工件台上基准板和掩模上第一对准标记分支间沿近似扫描方向上的精确对准位置;(e)以所述工件台基准板和掩模上第一对准标记分支间的精确对准位置和第三对准标记分支间的粗对准位置计算掩模板上第三对准标记分支对应空间像的扫描中心位置,用工件台基准板上第三对准标记分支沿近似垂直对准标记分支中对准光栅的方向对掩模上对应的对准标记分支的空间像进行精扫描,运用扫描探测到的所述辐射信息和掩模位置信息及工件台位置信息进行计算,得到工件台上基准板和掩模上第三对准标记分支间沿近似扫描方向上的精确对准位置;(f)用步骤(d)和(e)所得到掩模上第一和第三对准标记分支的精确对准位置进行综合,校正得到对准位置,得到掩模上透射对准标记组合的空间成像中心在工件台坐标系下的坐标位置;(g)重复用步骤(a)~(f)得到掩模上若干个掩模对准标记在工件台坐标系下的空间对准坐标位置,用这些空间对准坐标位置计算并校准光刻装置中曝光掩模图形空间像的中心位置在工件台坐标系下的坐标位置。Yet another solution of the present invention is to provide a method for aligning a lithographic apparatus using the above-mentioned mask alignment mark, including the following steps: (a) using the second alignment mark in the mask alignment mark on the workpiece stage reference plate The marking branch performs a rough capture scan on the aerial image of the second alignment marking branch in the alignment mark on the mask, and uses the radiation information detected by the scanning, the mask position information and the workpiece table position information to calculate, and obtain the transmission pair The coarse center position of the alignment mark combination; (b) use the first alignment mark branch on the workpiece table reference plate to perform single-layer or multi-layer rough scanning of the aerial image of the corresponding alignment mark branch on the mask along the direction perpendicular to it , using the radiation information detected by scanning, the position information of the mask and the position information of the workpiece table to calculate, and obtain the distance along the scanning direction between the first alignment mark branch on the reference plate of the work table and the corresponding alignment mark branch on the mask. Coarse alignment space position information; (c) through the rough alignment position calculation of the first alignment mark branch on the mask and the workpiece table reference plate, update the center position of the third alignment mark branch in the vertical scanning direction, and use the workpiece The third alignment mark branch of the stage reference plate performs a single-layer or multi-layer rough scan on the third alignment mark branch on the mask, and uses the radiation information detected by scanning, the third alignment mark branch of the mask and the corresponding workpiece stage Calculate the position information of the alignment mark branch of the reference plate along the scanning direction, and obtain the rough alignment space position information along the scanning direction between the third alignment mark branch on the reference plate of the workpiece table and the corresponding alignment mark branch on the mask (d) calculate the scanning center position of the corresponding spatial image of the first alignment mark branch on the mask with the coarse alignment position between the first and third alignment mark branches on the workpiece table reference plate and the mask, and use the workpiece The first alignment mark branch on the stage reference plate performs fine scanning on the aerial image of the corresponding alignment mark branch on the mask along a direction approximately perpendicular to the alignment grating in the alignment mark branch, and uses the radiation information detected by scanning Calculate with the mask position information and the workpiece table position information to obtain the precise alignment position between the reference plate on the workpiece table and the first alignment mark branch on the mask along the approximate scanning direction; (e) use the workpiece table reference The fine alignment position between the first alignment mark branch on the plate and the mask and the rough alignment position between the third alignment mark branch calculate the scanning center position of the aerial image corresponding to the third alignment mark branch on the mask plate, and use the workpiece The third alignment mark branch on the stage reference plate finely scans the aerial image of the corresponding alignment mark branch on the mask along the direction approximately perpendicular to the alignment grating in the alignment mark branch, and uses the radiation information detected by scanning and The mask position information and the workpiece table position information are calculated to obtain the precise alignment position between the reference plate on the workpiece table and the third alignment mark branch on the mask along the approximate scanning direction; (f) use steps (d) and ( e) Synthesize the obtained precise alignment positions of the first and third alignment mark branches on the mask, correct the alignment positions, and obtain the spatial imaging center of the combination of transmission alignment marks on the mask under the workpiece table coordinate system Coordinate position; (g) Repeat steps (a) to (f) to obtain several mask alignment marks on the mask at the coordinates of the workpiece table space alignment coordinate positions under the coordinate system, and use these space alignment coordinate positions to calculate and calibrate the coordinate position of the center position of the spatial image of the exposure mask pattern in the lithography device under the workpiece table coordinate system.
与现有技术相比,由于采用本发明的对称型高捕获高对比度掩模对准标记及其对准方法,能够提高对准扫描的对准标记空间像的捕获能力和对准扫描生成对准信息的对比度及其信噪比,该方法能够提高对准扫描的效率,达到很高的对准位置重复精度,实现了对准扫描的标记成像高捕获概率,提高了对准扫描的效率。Compared with the prior art, due to the use of the symmetrical high-capture high-contrast mask alignment mark and its alignment method of the present invention, the ability to capture the aerial image of the alignment mark in the alignment scan and the alignment scan generated alignment can be improved. The contrast of information and its signal-to-noise ratio, the method can improve the efficiency of alignment scanning, achieve a high alignment position repeatability, realize the high capture probability of marker imaging of alignment scanning, and improve the efficiency of alignment scanning.
附图说明 Description of drawings
通过以下对本发明的具体实施例结合其附图的描述,可以进一步理解其发明的目的、具体结构特征和优点。其中,附图为:Through the following description of specific embodiments of the present invention in conjunction with the accompanying drawings, the purpose, specific structural features and advantages of the invention can be further understood. Among them, the attached figure is:
图1为光刻装置对准系统的结构示意图。FIG. 1 is a schematic structural diagram of an alignment system of a lithography apparatus.
图2为本发明的掩模对准标记的结构示意图。FIG. 2 is a schematic structural diagram of the mask alignment mark of the present invention.
图3为对准与校准方法示意图。Fig. 3 is a schematic diagram of the alignment and calibration method.
图4为本发明第2实施例的对准方法流程图。FIG. 4 is a flow chart of the alignment method according to the second embodiment of the present invention.
具体实施方式 Detailed ways
以下将对本发明的掩模对准标记及对准方法作进一步的详细描述。The mask alignment mark and alignment method of the present invention will be further described in detail below.
图1是光刻装置的对准系统的结构示意图,图中4为掩模,其上具有掩模图形(包括曝光掩模图形和掩模对准标记5),9为被光刻工件,掩模图形照射窗口2及其控制板3用于形成窗口将辐射1透射到掩模对准标记5上,以形成透射像;投影系统8用于将该透射像投射形成空间像,并用工件台基准板标记11下方的辐射传感器12探测该空间像;辐射传感器12用于检测空间像经过工件台基准板标记12透射后的辐射信息;掩模台位置探测器7和工件台位置探测器13分别探测对准扫描过程中的掩模台6和工件台10的空间位置。通过计算辐射信息与掩模4及工件台10间相对位置的关系模型参数,即可从该模型得到对准信息,所述对准信息包括与工件台上标记组合及其传感器的位置相关信息,所述辐射信息包括光振幅强度信息、光能量信息、相位信息中任意一种或者相位信息与其它两种信息的组合。Fig. 1 is the structure schematic diagram of the aligning system of lithography apparatus, among the figure 4 is a mask, has mask pattern (comprising exposure mask pattern and mask alignment mark 5) on it, 9 is the workpiece to be photoetched, mask The mold
实施例1Example 1
一种置于掩模台的掩模上和工件台的基准板上的掩模对准标记,是由多个对准标记分支构成的透射对准标记组合,所述标记组合,被用于提供所述的掩模光学对准。A mask alignment mark placed on the mask of the mask table and the reference plate of the workpiece table is a transmission alignment mark combination composed of a plurality of alignment mark branches, and the mark combination is used to provide The mask is optically aligned.
如图2a、图2b所示,所述掩模对准标记包括第一对准标记分支20a、第二对准标记分支30和第三标记分支20b,第一和第三对准标记分支20a、20b互为旋转90°替换;工件台基准板上透射对准标记中对应第二对准标记分支30图形呈方形透射孔状分布,在用另外两个对准标记分支20a、20b进行对准扫描之前,通过工件台基准板上透射对准标记中对应第二对准标记分支30扫描掩模上透射对准标记中对应第二对准标记分支30的空间像,用于对掩模上透射对准标记中对应第一和第三对准标记分支20a、20b的空间像进行粗定位,从而在用工件台基准板上的另外两个对准标记分支20a、20b对掩模上透射对准标记中的另外两个对准标记分支分别或同时进行对准扫描的过程中,能够完全包含并接收掩模上透射对准标记中对应第二对准标记分支30所成的空间像,用对准扫描过程中所获得的掩模上透射对准标记组合中对应第二对准标记分支30的投射空间像,经过工件台基准板上透射对准标记中对应第二对准标记分支形成的辐射信息,对工件台基准板透射对准标记中部分或全部对准标记分支进行对准扫描获得的辐射信息进行归一化。As shown in FIG. 2a and FIG. 2b, the mask alignment mark includes a first
如图2c所示,所述第一、第三对准标记分支20a/20b由第一、第二和第三光栅标记结构21~23沿与光栅垂直方向并排构成,其中第一和第三对准光栅标记结构21、23完全一样,被分布在第二对准光栅标记结构22两侧,第二对准光栅标记结构22与第一和第三对准光栅标记结构21、23相比其长度不一致,其长度是第一和第三对准光栅标记结构21、23的1.2倍至100倍,优选的比例还包括1.5倍、2倍、5倍、10倍、20倍或50倍。另一种可选方案是第一和第三对准光栅标记结构21、23的长度是第二对准光栅标记结构22的1.2倍至100倍,优选的比例还包括1.5倍、2倍、5倍、10倍、20倍或50倍。如此设计的目的是提高捕获能力和辐射透过能量的对比度。As shown in Figure 2c, the first and third
参见图2a~图2c,所述第一和第三对准标记分支20a、20b的光栅标记结构21~23进一步细分为三个细小光栅,工件台基准板上透射对准标记中对应第一、第三对准标记分支20a、20b的所有光栅标记结构的占空比同掩模上透射对准标记中对应所有光栅标记结构的占空比不相等,而工件台基准板上和掩模上透射对准标记中第一、第三对准标记分支20a、20b的所有光栅标记结构内部的细小光栅的占空比可以相同,也可以不相同,根据对准信号调制与测量要求确定。2a-2c, the grating mark structures 21-23 of the first and third
运用该透射对准标记能够提高10倍以上的捕获范围,提高2倍以上的信号对比度,同时提高2倍以上的信噪比,从而提高了光刻装置的对准精度,扩大了光刻装置对准的稳定性,提高掩模对准效率和其他测量的效率。Using the transmission alignment mark can increase the capture range by more than 10 times, increase the signal contrast by more than 2 times, and improve the signal-to-noise ratio by more than 2 times, thereby improving the alignment accuracy of the lithography device and expanding the accuracy of the lithography device. The stability of alignment improves the efficiency of mask alignment and other measurements.
实施例2Example 2
一种光刻装置的对准方法。它是在如图1所示的光刻装置的对准系统中,通过计算辐射与掩模及工件台间相对位置的关系模型参数,从该模型得到对准位置。A method for aligning a photolithography device. In the alignment system of the lithography apparatus shown in FIG. 1 , the alignment position is obtained from the model by calculating the parameters of the relationship model between the radiation and the relative position between the mask and the workpiece table.
下面结合图1至图4具体介绍运用上述掩模对准标记进行掩模对准的方法流程。图3中O点为工件台的几何中心,具体步骤如下:The flow of the mask alignment method using the above-mentioned mask alignment marks will be described in detail below with reference to FIG. 1 to FIG. 4 . Point O in Figure 3 is the geometric center of the workpiece table, and the specific steps are as follows:
1、用工件台基准板上透射对准标记12中的第二对准标记分支30对掩模上透射对准标记5中的第二对准标记分支30进行粗扫描捕获整个透射对准标记,得到透射对准标记的大致位置,其中工件台基准板和掩模上透射对准标记的三个对准标记分支以工件台几何中心O沿其径向排列;1. Use the second
2、用工件台基准板上光栅结构近似垂直于工件台径向的对准标记分支20a沿径向先对掩模上对应的对准标记分支的空间像进行粗扫描,若对应的掩模上对准标记分支的空间像与工件台基准板上标记之间存在的夹角Θ变化小于50微弧度,则可认为得到的是游标型莫尔条纹对准辐射信息;若该夹角Θ大于50微弧度,则扫描生成的信号中除了有游标型莫尔条纹对准辐射信息外,还存在横向莫尔条纹对准辐射信息,用上述对准辐射信息和工件台基准板上光栅结构垂直于工件台径向的对准标记分支20a和掩模上对应的对准标记分支的空间像间的相对位置信息进行对准计算,得到工件台上光栅结构垂直于工件台径向的对准标记分支20a和掩模上对应的对准标记分支间的径向粗对准位置B;2. Use the
3、用工件台基准板上光栅结构近似平行于工件台径向的对准标记分支20b对掩模上对应的对准标记分支的空间像沿切向进行粗扫描,以工件台几何中心O为圆心,以上述径向精确对准位置为方向延伸上述透射对准标记组合中第一与第三对准标记分支中心间的距离,得到切向扫描的中心点C,并以该点对应的切向角度为中心角度,先进行粗扫描,扫描生成的对准辐射信息中除了有游标型莫尔条纹对准辐射信息外,还存在横向莫尔条纹对准辐射信息,用上述对准辐射信息和工件台基准板上光栅结构近似平行于工件台径向的对准标记分支20b和掩模上对应的对准标记分支的空间像间的相对位置信息进行对准计算,得到切向粗对准位置夹角;3. Use the
4、经过切向粗对准位置夹角调整后,以上述径向粗对准位置为工件台径向对准精扫描的中心位置,用工件台基准板上光栅结构近似垂直于工件台径向的对准标记分支20a沿径向对掩模上对应的对准标记分支的空间像进行精扫描,该精扫描可以是对掩模上多个线条在工件台基准板面上的空间成像,也可以是对掩模上孤立线条在工件台基准板面上的空间成像;若对应的掩模上对准标记分支成像与传感器标记之间存在夹角,则扫描生成的信号中除了有游标型莫尔条纹对准辐射信息外,还存在横向莫尔条纹对准辐射信息,用上述对准辐射信息和工件台基准板上光栅结构垂直于工件台径向的对准标记分支20a和掩模上对应的对准标记分支的空间像间的相对位置信息进行对准计算,得到工件台上光栅结构垂直于工件台径向的对准标记分支20a和掩模上对应的对准标记分支间的径向精确对准位置A;4. After adjusting the included angle of the tangential coarse alignment position, take the above-mentioned radial coarse alignment position as the center position of the radial alignment fine scanning of the workpiece table, and use the grating structure on the reference plate of the workpiece table to be approximately perpendicular to the radial direction of the workpiece table. The
5、以步骤3中切向粗对准位置夹角为工件台对准旋转扫描的中心夹角,用工件台基准板上光栅结构近似平行于工件台径向的对准标记分支20b对掩模上对应的对准标记分支的空间像沿切向进行精扫描,扫描生成的信号中除了有游标型莫尔条纹对准辐射信息外,仍然存在横向莫尔条纹对准辐射信息,该精扫描可以是对多个线条在工件台基准板面上的空间成像,也可以是对孤立线条在工件台基准板面上的空间成像,用上述对准辐射信息和工件台基准板上光栅结构近似平行于工件台径向的对准标记分支20b和掩模上对应的对准标记分支的空间像间的相对位置信息进行对准计算,得到切向精确对准位置夹角偏移量θ,对应位置点为D;5. Take the included angle of the tangential coarse alignment position in
6、用步骤4所得到的径向精确对准位置A和步骤5所得到的切向精确对准位置夹角θ进行对准位置综合,即综合径向A点和切向D点,校正得到对准位置,得到掩模上透射对准标记组合的空间成像中心在工件台坐标系下的坐标位置。6. Use the radial precise alignment position A obtained in
7、重复用步骤1~6得到掩模上若干个透射对准标记组合在工件台坐标系下的空间对准坐标位置,用这些空间对准坐标位置计算并校准光刻装置中曝光掩模图形中心在工件台坐标系下的坐标位置。7. Repeat steps 1 to 6 to obtain the spatial alignment coordinate positions of several transmission alignment marks on the mask combined in the workpiece table coordinate system, and use these spatial alignment coordinate positions to calculate and calibrate the exposure mask pattern in the lithography device The coordinate position of the center in the workpiece table coordinate system.
实施例3Example 3
参见图1至图4,本发明的另一种光刻装置的对准方法,包括如下步骤:Referring to Fig. 1 to Fig. 4, another method for aligning a lithographic apparatus of the present invention includes the following steps:
(a)用工件台基准板上掩模对准标记中的第二对准标记分支对掩模上对准标记中的第二对准标记分支的空间像进行粗捕获扫描,运用扫描探测到的所述辐射信息和掩模位置信息及工件台位置信息进行计算,得到透射对准标记组合的粗中心位置;(a) Use the second alignment mark branch in the mask alignment mark on the workpiece table reference plate to perform rough capture scanning on the aerial image of the second alignment mark branch in the alignment mark on the mask, and use the detected calculating the radiation information, the position information of the mask and the position information of the workpiece table to obtain the coarse center position of the combination of transmission alignment marks;
(b)用工件台基准板上第一对准标记分支沿垂直于它的方向对掩模上对应的对准标记分支的空间像进行单层或多层粗扫描,运用扫描探测到的所述辐射信息和掩模位置信息及工件台位置信息进行计算,得到工件台基准板上第一对准标记分支和掩模上对应的对准标记分支间的沿扫描方向的粗对准空间位置信息;(b) Use the first alignment mark branch on the workpiece table reference plate to perform single-layer or multi-layer rough scanning of the aerial image of the corresponding alignment mark branch on the mask in a direction perpendicular to it, and use the detected Calculating the radiation information, mask position information, and workpiece table position information to obtain rough alignment space position information along the scanning direction between the first alignment mark branch on the work table reference plate and the corresponding alignment mark branch on the mask;
(c)通过掩模和工件台基准板上的第一对准标记分支的粗对准位置计算,更新第三对准标记分支垂直扫描方向的中心位置,用工件台基准板第三对准标记分支对掩模上第三对准标记分支进行单层或多层粗扫描,运用扫描探测到的所述辐射信息和掩模第三对准标记分支及对应工件台基准板对准标记分支沿扫描方向上的位置信息进行计算,得到工件台基准板上第三对准标记分支和掩模上对应的对准标记分支间的沿扫描方向的粗对准空间位置信息;(c) Through the rough alignment position calculation of the first alignment mark branch on the mask and the workpiece table reference plate, update the center position of the third alignment mark branch in the vertical scanning direction, and use the third alignment mark on the workpiece table reference plate The branch performs a single-layer or multi-layer rough scan on the third alignment mark branch on the mask, and uses the radiation information detected by scanning and the third alignment mark branch of the mask and the alignment mark branch of the corresponding workpiece table reference plate to scan along the The position information in the direction is calculated to obtain the rough alignment space position information along the scanning direction between the third alignment mark branch on the workpiece table reference plate and the corresponding alignment mark branch on the mask;
(d)以所述工件台基准板和掩模上第一与第三对准标记分支间的粗对准位置计算掩模上第一对准标记分支对应空间像的扫描中心位置,用工件台基准板上第一对准标记分支沿近似垂直于对准标记分支中对准光栅的方向对掩模上对应的对准标记分支的空间像进行精扫描,运用扫描探测到的所述辐射信息和掩模位置信息及工件台位置信息进行计算,得到工件台上基准板和掩模上第一对准标记分支间沿近似扫描方向上的精确对准位置;(d) Calculate the scanning center position of the aerial image corresponding to the first alignment mark branch on the mask based on the coarse alignment position between the first and third alignment mark branches on the workpiece table reference plate and the mask, and use the workpiece table The first alignment mark branch on the reference plate finely scans the aerial image of the corresponding alignment mark branch on the mask along a direction approximately perpendicular to the alignment grating in the alignment mark branch, and uses the radiation information detected by scanning and The mask position information and the workpiece table position information are calculated to obtain the precise alignment position between the reference plate on the workpiece table and the branch of the first alignment mark on the mask along the approximate scanning direction;
(e)以所述工件台基准板和掩模上第一对准标记分支间的精确对准位置和第三对准标记分支间的粗对准位置计算掩模板上第三对准标记分支对应空间像的扫描中心位置,用工件台基准板上第三对准标记分支沿近似垂直对准标记分支中对准光栅的方向对掩模上对应的对准标记分支的空间像进行精扫描,运用扫描探测到的所述辐射信息和掩模位置信息及工件台位置信息进行计算,得到工件台上基准板和掩模上第三对准标记分支间沿近似扫描方向上的精确对准位置;(e) Calculate the correspondence of the third alignment mark branch on the mask plate with the fine alignment position between the first alignment mark branch on the workpiece table reference plate and the mask and the rough alignment position between the third alignment mark branch At the scanning center position of the aerial image, use the third alignment mark branch on the workpiece table reference plate to fine-scan the aerial image of the corresponding alignment mark branch on the mask along the direction approximately vertical to the alignment grating in the alignment mark branch, using Scanning and calculating the detected radiation information, mask position information, and workpiece table position information to obtain an accurate alignment position between the reference plate on the workpiece table and the third alignment mark branch on the mask along the approximate scanning direction;
(f)用步骤(d)和(e)所得到掩模上第一和第三对准标记分支的精确对准位置进行综合,校正得到对准位置,得到掩模上透射对准标记组合的空间成像中心在工件台坐标系下的坐标位置;(f) Synthesize the precise alignment positions of the first and third alignment mark branches on the mask obtained in steps (d) and (e), correct the alignment positions, and obtain the combination of transmission alignment marks on the mask The coordinate position of the spatial imaging center in the workpiece table coordinate system;
(g)重复用步骤(a)~(f)得到掩模上若干个掩模对准标记在工件台坐标系下的空间对准坐标位置,用这些空间对准坐标位置计算并校准光刻装置中曝光掩模图形空间像的中心位置在工件台坐标系下的坐标位置。(g) Repeat steps (a) to (f) to obtain the spatial alignment coordinate positions of several mask alignment marks on the mask in the workpiece table coordinate system, and use these spatial alignment coordinate positions to calculate and calibrate the lithography device The coordinate position of the central position of the spatial image of the exposure mask pattern in the coordinate system of the workpiece table.
运用上述掩模对准方法,能够将全部掩模对准扫描时间较现有技术缩短8秒以上,从而具备较好的掩模对准效率。By using the above mask alignment method, the entire mask alignment scanning time can be shortened by more than 8 seconds compared with the prior art, thereby having better mask alignment efficiency.
以上介绍的仅仅是基于本发明的优选实施例,并不能以此来限定本发明的范围。任何对本发明实施步骤作本技术领域内熟知的等同改变或替换均不超出本发明的揭露以及保护范围。The above descriptions are only based on preferred embodiments of the present invention, and should not be used to limit the scope of the present invention. Any equivalent changes or substitutions known in the technical field to the implementation steps of the present invention will not exceed the disclosure and protection scope of the present invention.
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| CN101487985B (en) * | 2009-02-18 | 2011-06-29 | 上海微电子装备有限公司 | Alignment mark search system used for photo-etching equipment and its alignment mark search method |
| CN101520613B (en) * | 2009-03-20 | 2011-11-30 | 上海微电子装备有限公司 | Device and method for calibrating mark position |
| CN102103336A (en) * | 2011-03-14 | 2011-06-22 | 张雯 | High-accuracy alignment mark structure based on machine vision alignment |
| JP5766818B2 (en) * | 2011-12-20 | 2015-08-19 | シャープ株式会社 | EXPOSURE SYSTEM, EXPOSURE SYSTEM CONTROL DEVICE, AND EXPOSURE SYSTEM CONTROL METHOD |
| CN102520593B (en) * | 2012-01-06 | 2014-02-26 | 汕头超声印制板公司 | Alignment verification method for exposure machine |
| CN103713477B (en) * | 2012-09-28 | 2015-11-25 | 无锡华润上华半导体有限公司 | The aligning structure of double face photoetching machine and alignment method |
| CN104678720B (en) * | 2013-12-03 | 2017-01-04 | 上海微电子装备有限公司 | Utilize the method that mask alignment system carries out work stage datum plate rotated detection |
| CN105070201B (en) * | 2015-07-20 | 2017-12-05 | 中国科学院上海光学精密机械研究所 | Alignment device for the Moire fringe of lithographic equipment |
| CN105182681B (en) * | 2015-08-11 | 2019-07-02 | 清华大学深圳研究生院 | A kind of mask plate and the method that a variety of depth structures are processed on same silicon wafer |
| CN106644858B (en) * | 2016-12-28 | 2019-12-24 | 中国科学院长春光学精密机械与物理研究所 | A kind of laser particle size analyzer and particle size distribution testing method |
| CN112334834B (en) * | 2018-07-03 | 2023-10-17 | 应用材料公司 | Systems and methods for producing accurate raster patterns using multiple write columns each undergoing multiple scans |
| CN111623718B (en) * | 2019-02-28 | 2021-09-28 | 上海微电子装备(集团)股份有限公司 | Mask plate relief plate detection device, transmission system and photoetching equipment |
| CN111416661B (en) * | 2020-01-15 | 2021-06-29 | 华中科技大学 | An optical path alignment method for space optical communication |
| CN111381460B (en) * | 2020-04-29 | 2021-07-16 | 中国科学院光电技术研究所 | A measuring system and measuring method for both focusing and leveling and precise alignment |
| WO2022193151A1 (en) * | 2021-03-16 | 2022-09-22 | 中芯国际集成电路制造(上海)有限公司 | Mask plate, alignment mark and photolithography system |
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