CN100559168C - A Method for Measuring the Size Distribution of Semiconductor Quantum Dots Using Fluorescence Spectroscopy - Google Patents
A Method for Measuring the Size Distribution of Semiconductor Quantum Dots Using Fluorescence Spectroscopy Download PDFInfo
- Publication number
- CN100559168C CN100559168C CNB2008100355003A CN200810035500A CN100559168C CN 100559168 C CN100559168 C CN 100559168C CN B2008100355003 A CNB2008100355003 A CN B2008100355003A CN 200810035500 A CN200810035500 A CN 200810035500A CN 100559168 C CN100559168 C CN 100559168C
- Authority
- CN
- China
- Prior art keywords
- spectrum
- quantum dots
- quantum dot
- width
- calculated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
本发明公开了一种利用荧光光谱测量半导体量子点尺寸分布的方法。该方法通过实测半导体多量子点体系的PL谱;从有效质量近似下的含时微扰的薛定谔方程出发,计算半导体多量子点的PL谱;而后通过理论和实验PL谱对照获得量子点的尺寸分布,其中,PL谱的中心波长对应占比率最大的量子点的复合发光,而PL谱的形状对应尺寸的分布规律。本发明操作简便,耗时短;可以明确获得半导体多量子点体系的尺寸分布。
The invention discloses a method for measuring the size distribution of semiconductor quantum dots by using fluorescence spectrum. This method measures the PL spectrum of the semiconductor multi-quantum dot system; starting from the time-dependent perturbation Schrödinger equation under the effective mass approximation, calculates the PL spectrum of the semiconductor multi-quantum dot; and then obtains the size of the quantum dot by comparing the theoretical and experimental PL spectra Distribution, where the central wavelength of the PL spectrum corresponds to the composite luminescence of quantum dots with the largest proportion, and the shape of the PL spectrum corresponds to the distribution of the size. The invention has simple operation and short time consumption; the size distribution of the semiconductor multi-quantum dot system can be clearly obtained.
Description
技术领域 technical field
本发明涉及一种利用荧光光谱测量InAs/GaAs或InAs/InP半导体量子点尺寸分布的方法。The invention relates to a method for measuring the size distribution of InAs/GaAs or InAs/InP semiconductor quantum dots by using fluorescence spectrum.
背景技术 Background technique
自组织生长模式是目前较为常用的量子点生长方式。在实际器件应用中,为了优化诸如量子点激光器、量子点探测器等光电器件的性能,一般采用高密度多层的多量子点体系生长方式。由于这种方法很难生长出尺寸均匀的多量子点体系,使得量子点的PL谱并没有表现出δ函数的特征,而呈现出一定的展宽,在一定程度上妨碍了量子点光电器件的应用性能。为此,有人采用不同取向和图形化的衬底以及对生长工艺进行优化等,这在一定程度上改善了量子点的均匀性,但是结果还是不理想。而直接通过检测InAs/GaAs或InAs/InP半导体量子点尺寸分布的均匀性来指导生产工艺,则具有更明确的方向性和前瞻性。目前常用的检测方法有原子力显微镜、高分辨率透射电镜等,这些方法的缺点是检测过程复杂。由于量子点材料的应用重点在光电特性上,荧光(PL)光谱更直接与光电特性关联,若能提出一种通过PL谱的理论和实验相结合的分析方法来给出InAs/GaAs或InAs/InP量子点的尺寸分布将是一种较好的检测手段。The self-organized growth mode is currently the more commonly used quantum dot growth method. In practical device applications, in order to optimize the performance of optoelectronic devices such as quantum dot lasers and quantum dot detectors, a high-density multi-layer multi-quantum dot system growth method is generally used. Because this method is difficult to grow a multi-quantum dot system with uniform size, the PL spectrum of quantum dots does not show the characteristics of delta function, but shows a certain broadening, which hinders the application of quantum dot optoelectronic devices to a certain extent. performance. For this reason, some people use different orientations and patterned substrates and optimize the growth process, which improves the uniformity of quantum dots to a certain extent, but the results are still not ideal. It is more directional and forward-looking to directly guide the production process by detecting the uniformity of the size distribution of InAs/GaAs or InAs/InP semiconductor quantum dots. At present, the commonly used detection methods include atomic force microscope, high-resolution transmission electron microscope, etc. The disadvantage of these methods is that the detection process is complicated. Since the application of quantum dot materials focuses on the photoelectric properties, the fluorescence (PL) spectrum is more directly related to the photoelectric properties. The size distribution of InP quantum dots will be a better detection method.
发明内容 Contents of the invention
本发明的目的就是要提出一种通过实测和理论计算InAs/GaAs或InAs/InP多量子点体系的PL谱,结合分析方法得到InAs/GaAs或InAs/InP半导体量子点尺寸的分布。The purpose of the present invention is to propose a PL spectrum of InAs/GaAs or InAs/InP multi-quantum dot system through actual measurement and theoretical calculation, combined with analytical methods to obtain the distribution of InAs/GaAs or InAs/InP semiconductor quantum dot size.
本发明的利用荧光光谱测量InAs/GaAs或InAs/InP半导体量子点尺寸分布的方法如下:Utilize fluorescence spectrum of the present invention to measure InAs/GaAs or the method for InAs/InP semiconductor quantum dot size distribution as follows:
1).InAs/GaAs或InAs/InP半导体量子点PL谱的测量1). Measurement of PL spectrum of InAs/GaAs or InAs/InP semiconductor quantum dots
将量子点样品置于显微荧光光谱仪的物镜下,测量温度控制在270K以下,入射激光波长为632.8nm,激发功率为10-750mW,此时在量子点样品内产生的载流子浓度为1.0×1016-1.0×1017cm-3,由此测得量子点样品的PL谱。The quantum dot sample is placed under the objective lens of the microfluorescence spectrometer, the measurement temperature is controlled below 270K, the incident laser wavelength is 632.8nm, and the excitation power is 10-750mW. At this time, the carrier concentration generated in the quantum dot sample is 1.0 ×10 16 -1.0×10 17 cm -3 , thus measuring the PL spectrum of the quantum dot sample.
2).半导体量子点PL谱的理论计算2). Theoretical calculation of PL spectrum of semiconductor quantum dots
在有效质量和半球形量子点的近似下,设量子点具有高斯型的尺寸分布,利用Fortran软件解含时薛定谔方程:Under the approximation of the effective mass and hemispherical quantum dots, the quantum dots are assumed to have a Gaussian size distribution, and the time-dependent Schrödinger equation is solved using Fortran software:
式中Nc(V)是量子点体积为V时量子点中的载流子浓度,其中量子点中的载流子浓度Nc(V)正比于它的体积,即,Nc(V)∝V;对应量子点体积为V时的发光光谱;S(V)为量子点的高斯分布,
3).由公式(1)可知PL谱的峰值与展宽变化只与V0和σ有关,由此,先假设V0和σ为任一两个大于零的值(V01,σ1)计算PL谱,并与实验所测得的PL谱相比较。如果计算的PL谱的峰值能量(E1)小于实验测量的PL的峰值能量(E0),则将V01减小,直到再计算得到的PL谱的峰值能量(E2)大于实验测量的PL的峰值能量(E0),这时对应的体积为V02。反之,如果E1>E0,则增大V01,使其计算所对应的PL谱的峰值能量(E2)小于实验测量的PL的峰值能量(E0)。这样量子点的中心尺寸V0就在V01和V02之间。然后,利用二分法求得中心尺寸V0调,使得V0调对应的PL谱的峰值能量E满足|E0-E|<=0.001。这时认为V0=V0调。3). From the formula (1), it can be seen that the peak and broadening changes of the PL spectrum are only related to V 0 and σ. Therefore, first assume that V 0 and σ are any two values greater than zero (V 01 , σ 1 ) to calculate PL spectrum, and compared with the PL spectrum measured in the experiment. If the calculated peak energy (E 1 ) of the PL spectrum is less than the experimentally measured peak energy (E 0 ), then V 01 is reduced until the calculated peak energy (E 2 ) of the PL spectrum is greater than the experimentally measured The peak energy of PL (E 0 ), and the corresponding volume is V 02 . Conversely, if E 1 >E 0 , increase V 01 so that the calculated peak energy (E 2 ) of the corresponding PL spectrum is smaller than the experimentally measured PL peak energy (E 0 ). In this way, the central dimension V 0 of the quantum dot is between V 01 and V 02 . Then, the central size V 0 tone is obtained by using the dichotomy method, so that the peak energy E of the PL spectrum corresponding to the V 0 tone satisfies |E 0 −E|<=0.001. At this time, it is considered that V 0 =V 0 is tuned .
4).保持V0不变,计算(V0调,σ1)所对应的PL谱,并与实验测得的PL谱半峰宽相比较,如果计算的PL谱半峰宽大于实验的PL谱半峰宽,则使σ1变小,直到计算的PL谱半峰宽小于实验的PL谱半峰宽,这时对应的尺寸分离变量为σ2。反之如果计算的PL谱半峰宽<实验的PL谱半峰宽,则使σ1变大,直到计算的PL谱半峰宽>实验的PL谱半峰宽,这时对应的尺寸分离变量为σ2。这样量子点的中心尺寸σ就在σ1和σ2之间。最后利用二分法求得尺寸分离变量σ调,使得σ调对应的PL谱半峰宽能量满足|E0半-E|<=0.001,这时我们认为σ=σ调。4). Keeping V 0 unchanged, calculate the PL spectrum corresponding to (V 0 tone , σ 1 ), and compare it with the half-width of the PL spectrum measured in the experiment. If the calculated half-width of the PL spectrum is greater than the experimental PL The half-peak width of the spectrum makes σ 1 smaller until the calculated half-width of the PL spectrum is smaller than the half-width of the experimental PL spectrum. At this time, the corresponding size separation variable is σ 2 . Conversely, if the calculated half-peak width of the PL spectrum < the half-peak width of the experimental PL spectrum, then make σ1 larger until the calculated half-peak width of the PL spectrum > the half-peak width of the experimental PL spectrum, then the corresponding size separation variable is σ 2 . In this way, the central size σ of the quantum dot is between σ 1 and σ 2 . Finally, the size separation variable σ tone is obtained by using the dichotomy method, so that the half-width energy of the PL spectrum corresponding to the σ tone satisfies |E 0 half -E|<=0.001, then we consider σ=σ tone .
5).这时量子点的尺寸分布为:5). At this time, the size distribution of quantum dots is:
本发明是基于由于不同尺寸量子点俘获载流子的能力不同,从而对复合发光的贡献不同。在一定的激发功率下,虽然大尺寸的量子点有较多的载流子注入,但是由于大尺寸的量子点在整个量子点体系中占的比率很少,由此对量子点体系的PL谱的贡献很小。而尺寸分布上占绝大比例的量子点,由于在数量上的绝对优势,对量子点系统的PL谱的贡献最大,表现出PL谱的峰值对应该尺寸的量子点的复合发光。而量子点体系的PL谱的半峰宽,则是由于量子点尺寸分布引起的谱线展宽。因此,通过理论PL谱与实验所测得的PL谱的对比,可以得到量子点的尺寸分布。The present invention is based on the fact that quantum dots with different sizes have different abilities to capture carriers, thus making different contributions to recombination luminescence. Under a certain excitation power, although large-sized quantum dots have more carrier injections, since the large-sized quantum dots account for a small proportion in the entire quantum dot system, the PL spectrum of the quantum dot system contribution is small. Quantum dots, which account for the vast majority of size distribution, contribute the most to the PL spectrum of the quantum dot system due to their absolute advantage in number, showing that the peak of the PL spectrum corresponds to the composite luminescence of quantum dots of this size. The half-width of the PL spectrum of the quantum dot system is due to the broadening of the spectral line caused by the size distribution of the quantum dots. Therefore, the size distribution of quantum dots can be obtained by comparing the theoretical PL spectrum with the experimentally measured PL spectrum.
本发明的方法操作简单,耗时短,判断标准明显,并可对量子点系统发光性能进行预测,便于对半导体量子点材料产品进行分级处理,有利于产品质量的升级。The method of the invention is simple in operation, short in time consumption, clear in judging criteria, and can predict the luminous performance of the quantum dot system, facilitates grading treatment of semiconductor quantum dot material products, and facilitates upgrading of product quality.
附图说明 Description of drawings
图1为测量温度为80K时,测得到InAs/GaAs多量子点体系的PL谱(实线)和理论计算的在尺寸分离变量(σ)为0.09和0.07时对应的PL谱(点线和虚线)。Figure 1 shows the measured PL spectrum (solid line) of the InAs/GaAs multi-quantum dot system when the measurement temperature is 80K and the corresponding PL spectrum (dotted line and dashed line) when the size separation variable (σ) is 0.09 and 0.07 according to the theoretical calculation ).
图2为原子力显微镜测得的量子点尺寸分布图,(a)图为测得的量子点的分布图;(b)图中的柱形图为统计量子点的实际尺寸分布,点线为高斯近似下的量子点的尺寸分布。Figure 2 is the quantum dot size distribution figure measured by atomic force microscope, (a) figure is the distribution figure of the measured quantum dot; (b) the bar graph in the figure is the actual size distribution of statistical quantum dots, and the dotted line is Gaussian Size distribution of quantum dots under approximation.
图3保持尺寸分离变量σ=0.04不变,使V01=530nm3且V02=790nm3,利用二分法进行光谱比较寻找量子点的中心尺寸V0的光谱演示图。Fig. 3 keeps the size separation variable σ=0.04 unchanged, makes V 01 =530nm 3 and V 02 =790nm 3 , uses the dichotomy method for spectral comparison to find the spectral demonstration diagram of the central size V 0 of quantum dots.
图4为保持中心尺寸V0=730nm3不变,使σ1=0.04且σ2=0.1,利用二分法进行光谱比较寻找量子点的中心分离变量σ的光谱演示图。Fig. 4 is a spectrum demonstration diagram of finding the central separation variable σ of the quantum dots by using the dichotomy method for spectral comparison while keeping the central size V 0 =730nm 3 unchanged, making σ 1 =0.04 and σ 2 =0.1.
具体实施方式 Detailed ways
以下通过实施例及附图对本发明作进一步的详细说明:Below by embodiment and accompanying drawing, the present invention is described in further detail:
1.本实施例采用InAs/GaAs量子点样品,首先对其进行PL谱的测量,测量条件:1. In this embodiment, InAs/GaAs quantum dot samples are used, and the PL spectrum is first measured, and the measurement conditions are:
将量子点样品置于显微荧光光谱仪的物镜下,测量温度控制在80K的低温下,入射激光功率为200mW,入射激光波长632.8nm。这时在量子点样品内形成的载流子密度约为1.6×1016cm-3,测得InAs/GaAs量子点体系的PL谱,见图1中的实线,可见PL谱线峰值的中心位置(E0)为1.24eV,半峰宽为75meV。The quantum dot sample is placed under the objective lens of the microfluorescence spectrometer, the measurement temperature is controlled at a low temperature of 80K, the incident laser power is 200mW, and the incident laser wavelength is 632.8nm. At this time, the carrier density formed in the quantum dot sample is about 1.6×10 16 cm -3 , and the PL spectrum of the InAs/GaAs quantum dot system is measured, as shown in the solid line in Figure 1, where the center of the peak of the PL spectrum can be seen The position (E 0 ) is 1.24eV, and the half width is 75meV.
2.根据上述的InAs/GaAs半导体量子点PL谱的理论计算方法计算该体系的PL谱:2. Calculate the PL spectrum of the system according to the above-mentioned theoretical calculation method of InAs/GaAs semiconductor quantum dot PL spectrum:
先设V0和σ为任一两个大于零的值,利用Fortran软件计算PL谱,发现σ=0.04,V01=530nm3时,计算得到的PL谱的半峰宽小于75meV,且峰值的中心位置E1大于1.24eV,满足E1>E0。然后保持σ=0.04不变,再选一个V02>530nm3,使其对应的PL谱的峰值满足E2<E0,发现当V02=790nm3计算的PL谱满足该条件。然后通过二分法寻找到量子点的中心尺寸V0=730nm3。这时计算的PL谱的中心位置与实验所测得的谱线的中心位置1.24eV相对应。First set V 0 and σ as any two values greater than zero, and use Fortran software to calculate the PL spectrum. It is found that when σ=0.04, V 01 =530nm 3 , the half-peak width of the calculated PL spectrum is less than 75meV, and the peak The center position E 1 is greater than 1.24eV, satisfying E 1 >E 0 . Then keep σ=0.04 unchanged, and select another V 02 >530nm 3 , so that the corresponding peak of the PL spectrum satisfies E 2 <E 0 , and it is found that the PL spectrum calculated when V 02 =790nm 3 satisfies this condition. Then, the central dimension V 0 =730nm 3 of the quantum dot is found by the dichotomy method. At this time, the center position of the calculated PL spectrum corresponds to the center position 1.24eV of the experimentally measured spectral line.
3.保持量子点的中心尺寸V0=730nm3不变。已知σ1=0.04时计算得到的PL谱的半峰宽小于75meV,这时选取一个大一点的尺寸分离变量使其计算得到的PL谱的半峰宽大于75meV,发现当σ2=0.1时满足该要求。利用二分法进行光谱比较寻找到量子点的尺寸分离变量σ=0.07。3. Keep the central dimension V 0 =730nm 3 of the quantum dots unchanged. It is known that the half-peak width of the PL spectrum calculated when σ 1 =0.04 is less than 75meV. At this time, a larger size separation variable is selected to make the calculated half-peak width of the PL spectrum greater than 75meV. It is found that when σ 2 =0.1 meet that requirement. Spectral comparison using the dichotomy method finds the size separation variable σ=0.07 of the quantum dots.
这时量子点的尺寸分布S(V)可以用公式
量子点尺寸分布不同,测得的和计算所得的PL的峰值与形状均不同,且一种尺寸分布对应的PL谱是唯一的,所以我们的方法能够有效的找到量子点的尺寸分布。The size distribution of quantum dots is different, the measured and calculated PL peaks and shapes are different, and the PL spectrum corresponding to a size distribution is unique, so our method can effectively find the size distribution of quantum dots.
以上所述的实施例仅为了说明本发明的技术思想及特点,其目的在于使本领域的普通技术人员能够了解本发明的内容并据以实施,本专利的范围并不仅局限于上述具体实施例,即凡依本发明所揭示的精神所作的同等变化或修饰,仍涵盖在本发明的保护范围。The above-described embodiments are only to illustrate the technical ideas and characteristics of the present invention, and its purpose is to enable those of ordinary skill in the art to understand the content of the present invention and implement it accordingly. The scope of this patent is not limited to the above-mentioned specific embodiments. , that is, all equivalent changes or modifications made according to the spirit disclosed in the present invention are still covered by the protection scope of the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100355003A CN100559168C (en) | 2008-04-02 | 2008-04-02 | A Method for Measuring the Size Distribution of Semiconductor Quantum Dots Using Fluorescence Spectroscopy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100355003A CN100559168C (en) | 2008-04-02 | 2008-04-02 | A Method for Measuring the Size Distribution of Semiconductor Quantum Dots Using Fluorescence Spectroscopy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101251485A CN101251485A (en) | 2008-08-27 |
| CN100559168C true CN100559168C (en) | 2009-11-11 |
Family
ID=39954985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2008100355003A Expired - Fee Related CN100559168C (en) | 2008-04-02 | 2008-04-02 | A Method for Measuring the Size Distribution of Semiconductor Quantum Dots Using Fluorescence Spectroscopy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100559168C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103198167B (en) * | 2012-01-04 | 2015-10-14 | 北京邮电大学 | The computing method of semiconductor-quantum-point equilibrium composition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030127659A1 (en) * | 1998-04-01 | 2003-07-10 | Bawendi Moungi G. | Quantum dot white and colored light emitting diodes |
| CN1464542A (en) * | 2002-06-28 | 2003-12-31 | 中国科学院物理研究所 | Three-terminal electrical measurement method for quantum dot devices |
| CN1560633A (en) * | 2004-02-19 | 2005-01-05 | 上海交通大学 | Preparation method of quantum dot microspheres used as biomedical fluorescent probes |
| CN1601770A (en) * | 2004-10-26 | 2005-03-30 | 中国科学院长春应用化学研究所 | Synthesis of Cadmium Sulfide Quantum Dots by Two-Phase Thermal Method |
-
2008
- 2008-04-02 CN CNB2008100355003A patent/CN100559168C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030127659A1 (en) * | 1998-04-01 | 2003-07-10 | Bawendi Moungi G. | Quantum dot white and colored light emitting diodes |
| US20040259363A1 (en) * | 1998-04-01 | 2004-12-23 | Bawendi Moungi G. | Quantum dot white and colored light-emitting devices |
| CN1464542A (en) * | 2002-06-28 | 2003-12-31 | 中国科学院物理研究所 | Three-terminal electrical measurement method for quantum dot devices |
| CN1560633A (en) * | 2004-02-19 | 2005-01-05 | 上海交通大学 | Preparation method of quantum dot microspheres used as biomedical fluorescent probes |
| CN1601770A (en) * | 2004-10-26 | 2005-03-30 | 中国科学院长春应用化学研究所 | Synthesis of Cadmium Sulfide Quantum Dots by Two-Phase Thermal Method |
Non-Patent Citations (1)
| Title |
|---|
| 尺寸分布对量子点激发态发光性质的影响. 汤乃云,陈效双,陆卫.物理学报,第54卷第12期. 2005 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101251485A (en) | 2008-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ma et al. | Explosives detection in a lasing plasmon nanocavity | |
| Sychugov et al. | Narrow luminescence linewidth of a silicon quantum dot | |
| Zhang et al. | Optical phonons in isotopic Ge studied by Raman scattering | |
| Nayef et al. | Study of porous silicon humidity sensor vapors by photoluminescence quenching for organic solvents | |
| Ghosh et al. | Quantitative analysis of the phonon confinement effect in arbitrarily shaped Si nanocrystals decorated on Si nanowires and its correlation with the photoluminescence spectrum | |
| Prasad et al. | Ripple mediated surface enhanced Raman spectroscopy on graphene | |
| Roy et al. | Progress toward producing n-type CdSe quantum dots: tin and indium doped CdSe quantum dots | |
| Liu et al. | Performance-enhanced single-mode microlasers in an individual microwire covered by Ag nanowires | |
| Kuzik et al. | Raman scattering enhancement in porous silicon microcavity | |
| Valenta et al. | Photoluminescence from single silicon quantum dots at room temperature | |
| CN100559168C (en) | A Method for Measuring the Size Distribution of Semiconductor Quantum Dots Using Fluorescence Spectroscopy | |
| Ramirez-Gutierrez et al. | Photoluminescence study of porous p-type silicon: Identification of radiative transitions | |
| CN101299445B (en) | A semiconductor quantum well photon detection device | |
| Lin et al. | Boost lasing performances of 2D semiconductor in a hybrid tungsten diselenide monolayer/cadmium selenide quantum dots microcavity laser | |
| Włodarski et al. | Surface modification of ZnO nanotubes by Ag and Au coatings of variable thickness: systematic analysis of the factors leading to UV light emission enhancement | |
| Forcherio et al. | Localized plasmonic fields of nanoantennas enhance second harmonic generation from two-dimensional molybdenum disulfide | |
| Nien et al. | Far-field and near-field monitoring of hybridized optical modes from Au nanoprisms suspended on a graphene/Si nanopillar array | |
| Rasheed et al. | Surface reconstruction of silicon and polysilicon by Nd: YAG laser etching: SEM, Raman and PL studies | |
| Sychugov et al. | Light emission from silicon nanocrystals: Probing a single quantum dot | |
| Nomura et al. | Large vacuum Rabi splitting in single self-assembled quantum dot-nanocavity system | |
| Müller et al. | Synthesis and surface modification of light emitting silicon nanoparticles using non-thermal plasma techniques | |
| Park et al. | Wide-gap photoluminescence control of quantum dots through atomic interdiffusion and bandgap renormalization | |
| Jeantet et al. | Interplay of spectral diffusion and phonon-broadening in individual photo-emitters: the case of carbon nanotubes | |
| Millar et al. | Expanding the Ge emission wavelength to 2.25 μm with SixNy strain engineering | |
| Mavi et al. | Surface morphology and formation of GaAs nanocrystals by laser-induced etching: SEM, PL and Raman studies |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091111 Termination date: 20150402 |
|
| EXPY | Termination of patent right or utility model |