CN100501942C - Method for forming conductive layer with inclination angle - Google Patents
Method for forming conductive layer with inclination angle Download PDFInfo
- Publication number
- CN100501942C CN100501942C CNB2006100732664A CN200610073266A CN100501942C CN 100501942 C CN100501942 C CN 100501942C CN B2006100732664 A CNB2006100732664 A CN B2006100732664A CN 200610073266 A CN200610073266 A CN 200610073266A CN 100501942 C CN100501942 C CN 100501942C
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- Prior art keywords
- etching
- etching solution
- conductive layer
- inclination angle
- degree
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Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 32
- 229910052750 molybdenum Inorganic materials 0.000 claims description 32
- 239000011733 molybdenum Substances 0.000 claims description 32
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 150000001398 aluminium Chemical class 0.000 claims 2
- 238000001039 wet etching Methods 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 101100283604 Caenorhabditis elegans pigk-1 gene Proteins 0.000 description 1
- 229910015617 MoNx Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
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- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a method for forming a conductive layer with an inclination angle, which utilizes an etching solution with a lower etching temperature of about 25-40 ℃ or two etching solutions with different temperatures (for example, the temperatures are respectively 35-30 ℃ and 30-25 ℃), and carries out wet etching on a single conductive layer or a conductive layer with a multilayer structure on a substrate so as to obtain a proper inclination angle of the conductive layer.
Description
Technical field
The invention relates to that a kind of formation has the method for inclined conductive layer, and particularly relevant for the low etching solution temperature of a kind of application, and formation has the method for the conductive layer at suitable inclination angle.
Background technology
Being applied to the etching technique of display processes (as LCD) and semiconductor related industry at present, mainly is to be divided into wet etching and two kinds of technology of dry etching.The advantage of dry etch technique be for micro-structural control better, make the technique component electrical performance good, but the solid byproducts ability of particulate and reaction generation is relatively poor in its vacuum board opposing environment itself.The advantage of wet etch technique is to be that its technology is simple, with low cost, have outstanding etching selectivity, and output speed (Throughput) is fast.Because the chemical reaction that wet etching carries out there is no the certain party tropism, be to belong to a kind of isotropism (Isotropic) etching, so the control of wet etching process just seems quite important.The major parameter of control wet etching process has: etchant concentration, etching period, reaction temperature etc.Wherein, etchant concentration increases, but the accelerated reaction material arrives and leave the speed on etched thing surface, and reaction temperature has then been controlled the speed that chemical reaction carries out.In addition, reactant in the etching solution carries out the quality transmission toward film surface except relying on diffusion, if suitably stir etching solution, also can promote the ability that reactant is transported to film surface, so the alr mode of etching solution also can influence wet etching process so that flow of solution to be provided.
Applicable conductor material is a lot of in thin-film transistor, for example be metal molybdenum (Mo)/neodymium aluminium (AlNd), crome metal (Cr)/neodymium aluminium (AlNd) or titanium (Ti)/aluminium (Al)/titanium (Ti) etc., select suitable wet etching solution according to different conductor materials for use.With the metal molybdenum is example, in the past with hydrogen peroxide (H
2O
2) as molybdenum etching liquid, to obtain the section at the suitable inclination angle of tool (Taper), yet hydrogen peroxide is a strong oxidizer, for present most technology board, can cause improper oxidation, if use hydrogen peroxide and change all technology boards, then cost certainly will significantly improve, and does not meet economic benefit.Therefore, carry out the plain conductor wet etching of (comprising molybdenum) with the aluminium etching solution for about 45 ℃ in temperature at present.The aluminium etching solution is mainly by nitric acid (HNO
3), phosphoric acid (H
3PO
4), acetic acid (CH
3COOH) and water form because its etch-rate is the most stable, be widely used in the semiconductor technology at present.Main etching principle is to utilize nitric acid with the metal level oxidation, comes the decomposing oxidation thing by phosphoric acid and water again; Acetic acid to suppress dissociating of nitric acid, is kept the service time of the stable of etching solution and prolongation etching solution then as buffer (BufferAgent).The correlated response formula is as follows:
HNO
3+H
2O→H
3O
++NO
3-
2Mo+6H+→2Mo
3++3H
2
H
3PO
4+2H
2O→2H
3O
++HPO
42-
2Mo
3++3HPO
4 2-→Mo
2(HPO4)
3→2MoPO
4+H
3PO
4
Yet when about 45 ℃ of temperature were carried out wet etching, the speed that metal is removed was too fast, and too fast rate of etch can make metal level can't form predetermined inclination angle (Taper).
Summary of the invention
In view of this, purpose of the present invention is exactly to provide a kind of formation to have the method for inclined conductive layer.The etching solution of the low etch temperature of utilization, or the etching solution of high low temperature, so that etched conductive layer produces suitable inclination angle, and then the electrical and yield of raising application product.
According to purpose of the present invention, the method that a kind of formation has inclined conductive layer is proposed, comprising:
(a) provide conductive layer on substrate; And
(b) with the first etching solution etching conductive layer, to form first inclination angle; Wherein, the etch temperature of first etching solution is about 25 ℃～40 ℃.
According to purpose of the present invention, reintroduce a kind of method that makes conductive layer form the inclination angle, comprise step:
Use the first etching solution etching conductive layer, first etching solution has first etch temperature; And
Use the second etching solution etching conductive layer, second etching solution has second etch temperature,
Wherein, first etch temperature and second etch temperature are inequality.Preferably, first etch temperature is more than or equal to second etch temperature.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 illustrates the method flow diagram that has inclined conductive layer according to the formation of the preferred embodiment of the present invention.
Fig. 2 A, 2B illustrate the schematic diagram that has inclined conductive layer according to the formation of another preferred embodiment of the present invention.
Fig. 3 A, 3B show respectively at single metal molybdenum layer and single nitrogenize molybdenum layer and use method of the present invention to carry out the experimental result of wet etching.
[Reference numeral]
21: 23: the first nitrogenize molybdenum layers of substrate
25: the second nitrogenize molybdenum layers 23 ': the first nitrogenize molybdenum layer after the etching
25 ': the second nitrogenize molybdenum layer after the etching
Embodiment
About 25 ℃～40 ℃ of the lower etch temperature of utilization of the present invention, or the different etching solution of temperature are carried out wet etching at single conductive layer or multi-layered conductive structure, to obtain suitable conductive layer inclination angle.In addition, the present invention can be applied in the wet etching process of any conductive layer, the for example grid of amorphous silicon film transistor (TFT) or source/drain electrode, or low temperature polycrystalline silicon (Low Temperature Poly Silicon, LTPS) the grid wet etching process in the thin-film transistor.
Fig. 1 illustrates the method flow diagram that has inclined conductive layer according to the formation of the preferred embodiment of the present invention.In this preferred embodiment, the etching solution that serviceability temperature is different carries out etching to conductive layer.At first, provide conductive layer on substrate, shown in step 101; Then, be the first etching solution etching conductive layer of t1 with the etch temperature, to form first inclination angle, shown in step 102; Afterwards, with the second etching solution etching conductive layer of etch temperature t2, to form second inclination angle, wherein, the etch temperature t2 of second etching solution is lower than the etch temperature t1 of first etching solution, shown in step 103 again.First etching solution and this second etching solution can have identical component.If with aluminium etching solution (nitric acid, phosphoric acid, acetic acid and water) as first etching solution and second etching solution, and the conductive layer that comprises molybdenum carried out wet etching, when the etch temperature of first etching solution is about 30 ℃～35 ℃, the etch temperature of second etching solution is about 25 ℃～30 ℃, and conductive layer has inclination angle (taper angle) about 30 degree～70 degree after the etching.
Fig. 3 A demonstration uses method of the present invention to carry out wherein one group of experimental result of wet etching at single metal molybdenum layer, and the result shows: molybdenum layer has about 41.1 degree in inclination angle after the etching.
Except being applied in single conductive layer, the present invention also can be applicable to multilayer conductive layer structure.For the sandwich construction conductive layer that comprises molybdenum, if about 25～40 ℃ or about 25～35 ℃ this sandwich construction carried out etching with low etch temperature; Or use first about 30 ℃～35 ℃ etching solution of first etch temperature earlier, re-using second etch temperature is that second about 25 ℃～30 ℃ etching solution carries out etching, all can obtain the conductive layer of the good inclination angle of tool about 15 degree～40 degree.
Please refer to Fig. 2 A, 2B, it illustrates the schematic diagram that has inclined conductive layer according to the formation of another preferred embodiment of the present invention.Shown in Fig. 2 A, on substrate 21, form the conductive layer of a sandwich construction, comprise the first nitrogenize molybdenum layer 23 (brief note is MoNy) that is formed on the substrate and be formed at the second nitrogenize molybdenum layer 25 (brief note is MoNx) on the first nitrogenize molybdenum layer.Wherein, as the first nitrogen content y of the first nitrogenize molybdenum layer 23 during more than or equal to the second nitrogen content x of the second nitrogenize molybdenum layer, if carry out etching for about 25～35 ℃ with low etch temperature, or use first about 30 ℃～35 ℃ etching solution earlier, re-use second about 25 ℃～30 ℃ etching solution and carry out etching, then the inclination angle [theta] of the first nitrogenize molybdenum layer 23 ' about 15 degree～40 degree or about 15 degree～25 degree after the etching.
Certainly, the second nitrogen content x also can equal 0, the first nitrogen content y is not equal to 0, make the sandwich construction on the substrate 21 become nitrogenize molybdenum layer 23 and pure molybdenum layer 25, carry out etching if use (1) low etch temperature (about 25～40 ℃ or 25～35 ℃), or (2) use high temperature etching liquid, about 30 ℃～35 ℃ earlier; Re-use low temperature etching liquid afterwards, about 25 ℃～30 ℃ are carried out etching, also can obtain good inclination angle.
Fig. 3 B shows wherein one group of experimental result of carrying out wet etching at single nitrogenize molybdenum layer (x=y) use method of the present invention, and the result shows: the nitrogenize molybdenum layer has about 21.4 degree in inclination angle after the etching.
Therefore, have the method for inclined conductive layer,, or utilize the etching solution of high temperature low temperature, all can make etched conductive layer produce suitable inclination angle no matter be to use the etching solution of low etch temperature according to a kind of formation of the invention described above.If use method of the present invention in the grid or the source/drain electrode of amorphous silicon film transistor (TFT), or the grid wet etching process in low temperature polycrystalline silicon (LTPS) thin-film transistor, the electrical and yield of making product all can be improved.
In sum, though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The ordinary technical staff in the technical field of the invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when looking being as the criterion that claims define.
Claims (10)
1. a formation has the method for inclined conductive layer, comprising:
(a) provide conductive layer on substrate;
(b) with first this conductive layer of etching solution etching, to form first inclination angle; Wherein, the etch temperature of this first etching solution is 25 ℃～35 ℃; And
(c) with second this conductive layer of etching solution etching, to form second inclination angle; Wherein, the etch temperature of this second etching solution is lower than the etch temperature of this first etching solution.
2. method as claimed in claim 1, wherein this first etching solution is the aluminium etching solution, this aluminium etching solution mainly is made up of nitric acid, phosphoric acid, acetic acid and water.
3. method as claimed in claim 1, wherein this second etching solution is the aluminium etching solution, this aluminium etching solution mainly is made up of nitric acid, phosphoric acid, acetic acid and water.
4. method as claimed in claim 1, wherein the etch temperature of this second etching solution is 25 ℃～30 ℃.
5. method as claimed in claim 4, wherein the etch temperature of this first etching solution is 30 ℃～35 ℃.
6. method as claimed in claim 1, wherein this conductive layer comprises molybdenum, has second inclination angle, 30 degree～70 degree after the etching.
7. method as claimed in claim 1, wherein this first etching solution and this second etching solution have identical component.
8. method as claimed in claim 1, wherein this conductive layer is that sandwich construction comprises molybdenum, this conductive layer after this etching has this first inclination angle, 15 degree～40 degree.
9. method as claimed in claim 8, wherein this sandwich construction comprises at least:
The first nitrogenize molybdenum layer is formed on this substrate; And
The second nitrogenize molybdenum layer is formed on this first nitrogenize molybdenum layer;
Wherein, first nitrogen content of this first nitrogenize molybdenum layer is more than or equal to second nitrogen content of this second nitrogenize molybdenum layer.
10. method as claimed in claim 9, wherein this first nitrogenize molybdenum layer after this etching has inclination angle 15 degree～40 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100732664A CN100501942C (en) | 2006-04-06 | 2006-04-06 | Method for forming conductive layer with inclination angle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100732664A CN100501942C (en) | 2006-04-06 | 2006-04-06 | Method for forming conductive layer with inclination angle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1851883A CN1851883A (en) | 2006-10-25 |
| CN100501942C true CN100501942C (en) | 2009-06-17 |
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| CNB2006100732664A Expired - Fee Related CN100501942C (en) | 2006-04-06 | 2006-04-06 | Method for forming conductive layer with inclination angle |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8270178B2 (en) | 2010-03-22 | 2012-09-18 | Au Optronics Corporation | Active device array substrate |
| CN101814460A (en) * | 2010-04-15 | 2010-08-25 | 友达光电股份有限公司 | Active element array substrate and manufacturing method thereof |
| CN103205752B (en) * | 2013-04-09 | 2016-07-13 | 中国电子科技集团公司第十一研究所 | A kind of corrosion liquid and corrosion method |
| CN106024675A (en) * | 2016-05-13 | 2016-10-12 | 江苏佑风微电子有限公司 | Semiconductor silicon wafer corrosive liquid and corrosion method thereof |
| CN111334799B (en) * | 2020-03-12 | 2022-04-01 | Tcl华星光电技术有限公司 | Etching apparatus and etching method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040055997A1 (en) * | 2001-10-23 | 2004-03-25 | Hong-Scik Park | Etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method |
| CN1575509A (en) * | 2001-10-22 | 2005-02-02 | 三菱瓦斯化学株式会社 | Etching method for aluminum-molybdenum laminate film |
| CN1716009A (en) * | 2004-02-25 | 2006-01-04 | 三菱瓦斯化学株式会社 | Etching composition for laminated film including reflective electrode and method for forming laminated wiring structure |
-
2006
- 2006-04-06 CN CNB2006100732664A patent/CN100501942C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1575509A (en) * | 2001-10-22 | 2005-02-02 | 三菱瓦斯化学株式会社 | Etching method for aluminum-molybdenum laminate film |
| US20040055997A1 (en) * | 2001-10-23 | 2004-03-25 | Hong-Scik Park | Etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method |
| CN1716009A (en) * | 2004-02-25 | 2006-01-04 | 三菱瓦斯化学株式会社 | Etching composition for laminated film including reflective electrode and method for forming laminated wiring structure |
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|---|---|
| CN1851883A (en) | 2006-10-25 |
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