CN100474515C - Film formation apparatus and method for semiconductor process - Google Patents

Abstract

The present invention provides a film forming apparatus for semiconductor processing, comprising a raw material gas supply system for supplying a raw material gas for depositing a thin film on a substrate to be processed into a processing container, and supplying a raw material gas for introducing impurities into the thin film into the processing container. The mixed gas supply system of the doping gas and the mixed gas used to dilute the doping gas. The mixed gas supply system includes: a gas mixing box for mixing dopant gas and diluent gas to form a mixed gas and arranged outside the processing container, a supply line for supplying the mixed gas from the gas mixing box to the processing container, and a gas mixing box to the gas mixing box. A dopant gas supply system for supplying a dopant gas to the tank, and a dilution gas supply system for supplying a dilution gas to the gas mixing tank.

Description

Film forming device and method for semiconductor process

technical field

The present invention relates to a film forming apparatus and method for semiconductor processing for forming a thin film doped with impurities (dopants) such as phosphorus (P) or boron (B) on a substrate to be processed such as a semiconductor wafer. Here, the so-called semiconductor processing refers to the process of forming semiconductor layers, insulating layers, conductive layers, etc. Various processes are performed on the substrate to be processed to manufacture structures including semiconductor devices, wiring and electrodes connected to the semiconductor devices.

Background technique

In the manufacturing process of a semiconductor device constituting a semiconductor integrated circuit, various processes such as film formation, oxidation, diffusion, modification, annealing, and etching are performed on a substrate to be processed, such as a semiconductor wafer. In CVD (Chemical Vapor Deposition), which is one type of film forming process, there are cases where a film forming source gas and a dopant gas are simultaneously supplied to dope the deposited film with impurities. Such a CVD method in a vertical heat treatment apparatus is disclosed in Japanese Unexamined Patent Application Publication No. 2003-282566. In this method, a plurality of semiconductor wafers are accommodated in multiple stages in a vertical processing container. Next, a film-forming gas and a dopant gas containing impurities are supplied into the processing chamber while heating the wafer. Thus, a thin film is deposited on the wafer while being doped with impurities. In the phosphorus-doped polysilicon process, for example, PH ₃ gas is used as the doping gas.

When the dopant gas is a material with a relatively high vapor pressure, the dopant gas can be introduced into the processing vessel while controlling the flow rate from a storage vessel in which pure dopant gas is stored. However, in general, since the vapor pressure of such a dopant gas is very low, sufficient diffusion cannot be achieved even if a pure gas is introduced into the processing container as it is, and the dopant amount becomes unevenly distributed.

Therefore, when supplying such a dopant gas, the dopant gas is usually filled into a storage tank in a state where it is pre-diluted by, for example, about 1% with an inert gas such as N ₂ . In use, the pre-diluted 1% dopant gas flows out from the storage tank while controlling the flow rate, and is introduced into the processing container in a state of good diffusion. When the diluted dopant gas is introduced from the storage tank into the processing container, the gas flow rate per unit time only increases in the diluted portion. Therefore, the dopant gas can be quickly and uniformly diffused in a large-capacity processing container in a short time.

However, in this case, since the dopant gas is filled in the storage tank in the above-mentioned diluted state, the amount of gas used (outflow amount) per unit time increases. Therefore, the storage tank must be exchanged in a short time, and therefore, the productivity is lowered, and thus the production amount is lowered. In particular, as the wafer size increases from 8 inches to 12 inches (300mm), the capacity in the so-called batch processing container also becomes significantly larger. In view of these circumstances, it is necessary to perform more rapid and uniform diffusion of the dopant gas into the processing chamber while maintaining a high throughput.

Contents of the invention

The object of the present invention is to improve the productivity, that is, the production rate by suppressing the exchange frequency of the dopant gas source while maintaining the high diffusion rate of the dopant gas in the processing container in a film-forming apparatus and method for semiconductor processing. quantity.

A first aspect of the present invention is a film-forming device for semiconductor processing, including:

A processing container for accommodating a plurality of substrates to be processed accumulated at intervals;

A supporting member supporting the substrate to be processed in the processing container;

a heater for heating the above-mentioned substrate to be processed in the above-mentioned processing container;

An exhaust system for exhausting the inside of the above-mentioned processing container;

a source gas supply system for supplying a source gas for depositing a thin film on the substrate to be processed into the processing container;

a mixed gas supply system for supplying a mixed gas of a doping gas for introducing impurities into the thin film and a dilution gas for diluting the dopant gas into the processing container; and

A control unit for controlling the operation of the above-mentioned device including the above-mentioned mixed gas supply system, wherein,

The above mixed gas supply system includes:

a gas mixing box, used for mixing the above-mentioned dopant gas and the above-mentioned diluent gas to form the above-mentioned mixed gas, and is arranged outside the above-mentioned processing container;

a mixed gas supply line for supplying the mixed gas from the gas mixing box to the processing container;

a dopant gas supply system for supplying the above-mentioned dopant gas into the above-mentioned gas mixing box; and

A dilution gas supply system for supplying the dilution gas into the gas mixing tank.

A second aspect of the present invention is a film-forming method for semiconductor processing, comprising:

The process of heating a plurality of substrates to be processed accumulated in the processing container at intervals,

A process of supplying a raw material gas for depositing a thin film on the substrate to be processed into the processing container,

And while supplying a dopant gas for introducing impurities into the above-mentioned thin film and a dilution gas for diluting the above-mentioned dopant gas to a gas mixing box provided outside the above-mentioned processing container to form a mixed gas, from the above-mentioned gas mixing box A process of supplying the above-mentioned mixed gas into the above-mentioned processing container.

A third aspect of the present invention is a computer-readable medium, wherein said computer contains program instructions for implementation in a processor,

When the above-mentioned program instructions are executed by the processor, the following processes are performed in the film-forming apparatus for semiconductor processing:

The process of heating a plurality of substrates to be processed accumulated in the processing container at intervals,

A process of supplying a raw material gas for depositing a thin film on the substrate to be processed into the processing container,

And while supplying a dopant gas for introducing impurities into the above-mentioned thin film and a dilution gas for diluting the above-mentioned dopant gas to a gas mixing box provided outside the above-mentioned processing container to form a mixed gas, from the above-mentioned gas mixing box A process of supplying the above-mentioned mixed gas into the above-mentioned processing container.

More subjects and advantages of the present invention will be described below, and they obviously belong to a part of the present invention, or can be learned through the practice of the present invention. The problems and advantages of the invention can be realized through specific methods and combinations.

Description of drawings

These drawings together constitute a part of the specification and are used to describe the specific embodiments of the present invention. Together with the general description above, the following embodiments are specifically described to explain the principle of the present invention.

FIG. 1 is a configuration diagram showing a vertical film formation apparatus (CVD apparatus) according to an embodiment of the present invention.

2 is a schematic view showing the gas inflow state in the processing container, the inflow amount of gas into the gas mixing box, the opening and closing states of each on-off valve, and the pressure in the gas mixing box and the processing container.

Fig. 3 is a schematic block diagram showing the configuration of a main control unit.

Detailed ways

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, in the following description, the same reference numerals are attached to components having substantially the same function and structure, and the description will be repeated only when necessary.

FIG. 1 is a configuration diagram showing a vertical film formation apparatus (CVD apparatus) according to an embodiment of the present invention. As shown in FIG. 1 , the film forming apparatus 2 has a vertical processing container 4 whose lower end is opened into a cylindrical shape. The processing container 4 is made of, for example, quartz with high heat resistance. An open exhaust port 6 is formed in the ceiling portion of the processing container 4 . An exhaust nozzle 8 bent laterally at a right angle is connected to the exhaust port 6 . The exhaust nozzle 8 is connected to an exhaust system 14 provided with a pressure control valve 10 and a vacuum pump 12 on the way. The gas in the processing container can be vacuum-exhausted through the exhaust system 14 .

The lower end of the processing container 4 is supported by, for example, a cylindrical main frame 16 made of stainless steel. A sealing member 20 such as an O-ring is interposed between the lower end of the processing container 4 and the upper end of the main frame 16 to maintain the airtightness of this portion. An opening is formed at the lower end of the main frame 16 through which the wafer pod 18 is loaded and unloaded. The wafer pod 18 is made of quartz, and functions as a holding member for placing semiconductor wafers W in multiple stages at a predetermined pitch. In the case of the present embodiment, in the wafer chamber 18, approximately 50 to 100 wafers W having a diameter of 300 mm can be supported in multiple stages at approximately equal intervals. Part of the main frame 16 can be integrally formed with one side of the processing container 4 through quartz.

The wafer chamber 18 is placed on a table 24 by an insulated cylinder 22 made of quartz. The table 24 is supported by an upper end portion of a rotary shaft 28 of a lid portion 26 penetrating through the lower end opening of the main frame 16 . For example, a magnetic fluid seal 30 is provided at the penetrating portion of the rotary shaft 28 to support the rotary shaft 26 in an airtight manner and rotatably. A sealing member 32 made of, for example, an O-ring or the like is placed between the peripheral portion of the lid portion 26 and the lower end portion of the main frame 16 to maintain the airtightness of the processing container 4 .

The rotary shaft 28 is attached, for example, to the tip of an arm portion 36 supported by an elevating mechanism 34 such as a lifter. The wafer pod 18 , the cover 26 , and the like are integrally raised and lowered by the elevating mechanism 34 . Among them, the stage 24 is fixedly installed toward the cover portion 26 side so that the wafer W can be processed without rotating the wafer pod 18 .

A heater 38 made of carbon wire is disposed on a side portion of the processing container 4 so as to surround it (for example, it is described in JP-A-2003-209063). The gas in the processing container 4 is heated by the heater 38 , so that the semiconductor wafer W is heated. The carbon wire heater can realize a clean process, and is superior in temperature rise and fall characteristics, and is suitable for the case where a plurality of treatments are performed continuously as described later. A heat insulating material 40 is provided on the outer periphery of the heater 38 to ensure thermal stability. Various gas supply systems for introducing and supplying various gases into the processing chamber 4 are arranged on the main frame 16 .

Specifically, a raw material gas supply system 42 , a reducing gas supply system 44 , and a mixed gas supply system 45 are connected to the main frame 16 . Each gas supply system 42, 44, 45 has gas nozzle 42A, 44A, 45A, respectively. Each gas nozzle 42A, 44A, 45A penetrates the side wall of the main frame 16, and at the same time, is bent at a right angle so that its end is upward.

The source gas supply system 42 supplies a source gas for depositing a thin film on the wafer W into the processing container 4 . The reducing gas supply system 44 supplies a reducing gas for promoting decomposition of the source gas into the processing container 4 . The mixed gas supply system 45 supplies a mixed gas of a dopant gas for introducing impurities into the thin film and a dilution gas for diluting the dopant gas into the processing chamber 4 . Furthermore, the mixed gas 45 is connected to a purge gas supply system 50 . The purge gas supply system 50 supplies an inert gas as a purge gas into the processing container 4 .

In this embodiment, a silane-based gas such as SiCl ₄ is used as the source gas. Hydrogen (H ₂ ) is used as the reducing gas. PH ₃ is used as doping gas, for example for phosphorus doping. Nitrogen (N ₂ ) was used as diluent gas and purge gas. Instead of N ₂ , other inert gases such as Ar and He may be used as the diluent gas and the purge gas.

More specifically, the gas nozzles 42A and 44A of the raw material gas supply system 42 and the reducing gas supply system 44 are connected to the raw material gas source 42S and the reducing gas supply line 52 and the reducing gas supply line 54 (gas passage). Source 44S is connected. Flow controllers 52B and 54B such as on-off valves and mass flow controllers are provided in the gas passages 52 and 54 . Therefore, it is possible to supply the raw material gas and the reducing gas while controlling the flow rates.

The gas nozzle 45A of the mixed gas supply system 45 is connected to a gas mixing box 66 provided outside the processing chamber 4 via a mixed gas supply line (gas passage) 64 . An on-off valve 64A is provided on the gas passage 64 . The mixing tank 66 has a predetermined capacity for mixing the dopant gas and the diluent gas to form a mixed gas. The capacity of the gas mixing box 66 is, for example, in the range of 200 to 5000 cc depending on the capacity of the processing container 4 . In particular, when about 50 to 100 wafers with a thickness of 300 mm are accommodated in the processing chamber 4, it is desirable that the capacity of the gas mixing box 66 is in the range of 600 to 700 cc. When the capacity of the gas mixing tank 66 is less than 200 cc, a sufficient capacity of the mixed gas required for film formation cannot be formed. In addition, if the capacity exceeds 5000 cc, the device itself will be too large.

Pure dopant gas without diluent gas is filled in dopant gas source 56 . On-off valves 58A, 62A and flow controllers 58B, 62B such as mass flow controllers are disposed on the gas passages 58 and 62 . Therefore, it is possible to supply the dopant gas and the diluent gas while controlling the flow rates. The gas passages 58 and 62 are connected to the gas mixing box 66 after the merge gas passage (merge line) 63 is merged. However, each of the gas passages 58 and 62 may be connected to the mixing box 66 respectively.

In addition, the gas passage 64 of the mixed gas supply system 45 is also used as the gas passage of the purge gas supply system 50 . That is, the gas passage 64 is connected to the purge gas source 50S via the purge gas supply line (gas passage) 68 downstream of the on-off valve 64A. The gas passage 68 is provided with an on-off valve 68A and a flow controller 68B such as a mass flow controller. Therefore, the purge gas can be supplied while controlling the flow rate.

Opening and closing valves 52A, 54A, 64A, 68A, 58A, and 62A are controlled by a gas supply control unit 70 composed of a microcomputer or the like. A pressure gauge 72 for measuring the internal pressure is provided in the gas mixing box 66 , and the measured pressure value is output to the gas supply control unit 70 in real time. The gas supply control unit 70 can obtain the volume of the dopant gas by calculating in real time based on the flow rate ratio of the dopant gas and the diluent gas and the pressure measurement value.

Further, the film forming apparatus 2 has a main control unit 80 composed of a computer that controls the operation of the entire apparatus including the gas supply control unit 70 . The main control unit 80 preliminarily stores a film forming process method in a storage unit accompanying it, and performs film forming process described later in accordance with, for example, the film thickness and composition of the film to be formed. In addition, in this storage unit, the relationship between the process gas flow rate and the film thickness and composition of the film is stored as pre-control data. Therefore, the main control unit 80 can control the gas supply control unit 70, the exhaust system 14, the elevating mechanism 34, the heater 38, and the like based on these stored processing methods.

Next, a film-forming method performed using the film-forming apparatus 2 configured as described above will be described. In the method of this embodiment, the source gas, the reducing gas, the dopant gas, and the diluent gas are introduced into the processing container 4 at intervals (pulse). Therefore, phosphorus-doped polysilicon films are deposited by repeatedly forming thin films at the atomic level or molecular level. This film-forming method is called so-called ALD (Atomic Layer Deposition).

First, in the standby state in which the film formation apparatus 2 is not loaded with a wafer, the processing container 4 is maintained at a temperature lower than the processing temperature. On the other hand, the normal-temperature wafer chamber 18 carrying a plurality of, for example, 50 wafers W is loaded in the processing container 4 upward from the bottom of the normal-temperature wafer chamber 18 . Then, the opening of the lower end of the main frame 16 is closed by using the lid portion 26 to hermetically seal the inside of the processing container 4 .

Next, the inside of the processing container 4 is evacuated and maintained at a predetermined processing pressure. Simultaneously, the wafer temperature is raised by increasing the power supplied to the heater 38, and the temperature is raised and stabilized until it reaches the processing temperature for film formation. Next, while controlling the flow rate, a predetermined processing gas necessary for each processing process is supplied from the gas nozzles 42A, 44A, 45A of the gas supply systems 42 , 44 , 45 into the processing chamber 4 . As described above, various gases are supplied at intervals (in a pulse form), and the supply and stop of these various gases are performed by the gas supply control unit 70 controlling the on-off valves 52A, 54A, 64A, 68A, etc. of.

The on-off valves 58A and 62A are opened when the film formation process starts, and the dopant gas and the dilution gas N ₂ always flow out from the dopant gas source 56 and the dilution gas source 60 . In this way, the dopant gas and the diluent gas are continuously supplied into the gas mixing box 66 at a predetermined flow ratio, and a uniformly mixed mixed gas is formed in the gas mixing box 66 .

On the other hand, while the dopant gas and the diluent gas are continuously supplied into the gas mixing box 66, the gas supply control unit 70 opens and closes the on-off valve 64A in a pulsed manner, thereby supplying the dopant gas and the diluent gas into the processing chamber 4 in a pulsed manner. mixed composition. In addition, the gas supply control unit 70 can supply the raw material gas and the reducing gas into the processing container 4 in a pulse form by opening and closing the on-off valve 64A in a pulse form and simultaneously opening and closing the on-off valves 52A and 54A in a pulse form. gas. Furthermore, the gas supply control unit 70 opens and closes the on-off valves 52A, 54A, and 64A in a pulsed manner, and simultaneously closes and opens the on-off valve 58A in a pulsed manner, thereby supplying gas into the processing chamber 4 in a pulsed manner in reverse phase. Purified gas, mixed gas, raw gas and reducing gas.

2 shows the state of gas inflow into the processing container 4, the amount of gas inflow into the gas mixing box 66, the opening and closing states of the on-off valves 52A, 54A, 64A, and 68A, the inside of the gas mixing box 66, and the processing container 4. Schematic diagram of the internal pressure.

First, when the film forming process starts, the on-off valves 58A and 62A are simultaneously opened, and PH ₃ as a dopant gas and N ₂ as a diluent gas start to flow out, and these two gases are uniformly mixed in the gas mixing box 66 ( See Figure 2D and Figure 2E). In this state, since the on-off valve 64 is closed, the mixed gas does not flow downstream. Then, after the mixed gas is stored in the gas mixing tank 66, the mixed gas is intermittently supplied to the processing container 4 (see FIG. 2B). In synchronization with the supply of the mixed gas, the raw material gas (SiCl ₄ ) and the reducing gas (H ₂ ) are also intermittently supplied to the processing container 4 to perform the film formation process (see FIG. 2A ). In addition, when the raw material gas and the mixed gas are not introduced into the processing container 4 at the same time, N ₂ gas is supplied as a purge gas to the container 4 to discharge the residual gas (see FIG. 2C ).

The supply and stop of the above-mentioned various gases to the processing container 4 are performed by opening and closing control of the opening and closing valves 52A, 54A, 64A, and 68A as shown in FIGS. 2F to 2H . As shown in FIG. 2(I), the pressure inside the gas mixing box 66 is formed repeatedly between the micro pressure P1 and the pressure P2. In addition, the pressure inside the processing container 4 is formed so as to repeatedly be between the slight pressures P3 and P4.

At this time, the primary supply period of source gas etc. is, for example, T1 in the range of 1 to 180 sec, the purging period T2 of N ₂ gas is in the range of, for example, 1 to 180 sec, and the film forming temperature is in the range of, for example, 300 to 650°C. The film forming pressure is in the range of about 26.6 to 1333 Pa, the flow rate of SiCl ₄ is in the range of 200 to 5000 sccm, and the flow rate of N ₂ gas is in the range of 200 to 5000 sccm, for example. The flow rate of the doping gas PH ₃ is, for example, in the range of 0.1 to 1000 sccm, and the flow rate of the N ₂ gas as the diluent gas is, for example, in the range of 1 to 5000 sccm.

At this time, the gas supply control unit 70 operates the on-off valves 52A, 54A, 64A, and 68A (sets the pulse width of the gas supply) according to the processing method received from the main control unit 80 . In this case, the supply of each gas and the time at which the supply is stopped can be obtained by measuring the respective periods T1 and T2 with a timer.

Instead, the supply and stop timing of each gas can be obtained by monitoring the pressure in the gas mixing tank 66 with the pressure gauge 72 and based on the pressure change. For example, when the gas mixing tank 66 reaches a predetermined pressure P1, the on-off valve 64A is opened. At this time, based on the start pressure P1 and the predetermined supply amount of the air-fuel mixture in one pulse, the end pressure at which the supply should be stopped can be immediately calculated. Then, continue to supply the mixed gas, when reaching the end pressure (in this example, P2) in the gas mixing box 66, close the on-off valve 64A, stop the supply of the mixed gas, in this case, other on-off valves 52A, 54A, and 68A are operated in synchronization with the operation of the on-off valve 64A.

Furthermore, when the supply of each gas and the time to stop the supply are obtained according to the pressure change in the gas mixing box 66, when the gas mixing box 66 reaches the specified pressure P1, the on-off valve 64A is set only at the specified pressure. Time is open, and in this case, the other on-off valves 52A, 54A, 68A are operated in synchronization with the on-off valve 64A.

The method related to the above-mentioned embodiment is executed under the control of the main control unit 80 based on the processing program as described above. FIG. 3 is a schematic block diagram showing the configuration of the main control unit 80 . The main control unit 80 has a CPU 210 to which a storage unit 212 , an input unit 214 , an output unit 216 , and the like are connected. Processing programs and process methods are stored in the storage unit 212 . The input unit 214 includes an input device for communicating with the user, such as a keyboard or a portable device, and a drive for a storage medium, and the output unit 216 outputs control signals for controlling each device of the processing device. In addition, FIG. 3 also shows a storage medium 218 that can be attached to and detached from the computer.

The methods of the above-described embodiments are applicable to various semiconductor processing apparatuses by writing them into a computer-readable storage medium as process-executable program instructions. Alternatively, such program instructions can be applied to various semiconductor processing devices by being transmitted through a communication medium. The storage medium is, for example, a magnetic disk (a floppy disk, a hard disk (one example of which is included in the storage unit 212) and the like), an optical disk (CD, DVD, etc.), a magneto-optical disk (MO, etc.), semiconductor storage, and the like. The computer that controls the operation of the semiconductor processing device reads the program instructions stored in the storage medium, and executes the above-mentioned method on the process.

In the above-described embodiment, a gas tank filled with a pure dopant gas not mixed with a diluent gas is used as the dopant gas source 56 . The pure dopant gas flowing out of the gas storage tank is uniformly mixed with the diluent gas in the gas mixing container 66 to form a large amount of mixed gas. Then, the mixed gas is supplied into the processing container 4 . Therefore, the diffusion rate of the dopant gas is increased, and the dopant gas can be quickly and uniformly diffused into the processing container 4 in a short time. In addition, since pure dopant gas is filled in the gas storage tank of the dopant gas source, the exchange frequency is completely reduced, and high productivity, that is, throughput can be maintained. Here, even if the dopant gas source 56 is not a pure gas, a predetermined effect can be obtained as long as it is filled with a high-concentration dopant gas of a certain level or more, for example, a concentration of 10% or more.

In the above-mentioned embodiments, the film-forming method of the phosphorus-doped polysilicon film was exemplified, but the present invention is also applicable to cases where other impurities are doped or other types of films are formed.

The processing vessel 4 as a heat treatment device is not limited to the single-tube structure shown in FIG. 1 , and may have a double-tube structure, for example. The substrate to be processed is not limited to a semiconductor wafer, and may be other substrates such as LCD substrates and glass substrates.

Additional advantages and improvements will readily occur to those skilled in the art. Therefore, the present invention in its broad scope is not limited to the above description and specific embodiments. Accordingly, various modifications may be made without departing from the spirit and scope of the invention as defined in the claims and their equivalents.

Claims (7)

1. film formation device that semiconductor processes is used is characterized in that:

Comprise:

The container handling of a plurality of processed substrates of taking in devices spaced apart and accumulating;

In described container handling, support support sector's material of described processed substrate;

Heat the heater of the described processed substrate in the described container handling;

To carrying out the gas extraction system of exhaust in the described container handling;

The unstrpped gas feed system is supplied with the unstrpped gas that is used for build-up film on described processed substrate in described container handling;

The mist feed system, in described container handling, supply with and be used for importing the impurity gas of impurity and being used to dilute the mist of the diluent gas of described impurity gas to described film: and

Control the control part of the action of the described device that comprises described mist feed system, wherein,

Described mist feed system comprises:

Gas mixing casing is used to mix described impurity gas and described diluent gas to form described mist, is set at outside the described container handling;

In described container handling, supply with the mist supply line of described mist from described gas mixing casing;

In described gas mixing casing, supply with the impurity gas feed system of described impurity gas;

In described gas mixing casing, supply with the diluent gas feed system of described diluent gas;

Be arranged on first open and close valve on the described mist supply line; And

Measure the pressure gauge of the pressure in the described gas mixing casing,

Described unstrpped gas feed system has in described container handling the unstrpped gas supply line of supplying with described unstrpped gas and is arranged on second open and close valve on the described unstrpped gas supply line,

Described control part, under the state of closing first open and close valve, in described gas mixing casing, supply with described impurity gas and described diluent gas continuously from described impurity gas feed system and described diluent gas feed system, simultaneously, open described first open and close valve and in described container handling, supply with described mist, and, open and close described first open and close valve with pulse type based on described manometric measured value

Described control part opens and closes described second open and close valve with pulse type opening and closing described first open and close valve with pulse type when.

2. film formation device as claimed in claim 1 is characterized in that:

Described mist feed system has the interflow line, makes from the described impurity gas of described impurity gas feed system and described diluent gas feed system and described diluent gas interflow and to described gas mixings casing supply.

3. film formation device as claimed in claim 1 is characterized in that:

The capacity of described gas mixing casing is in the scope of 200～5000cc.

4. film formation device as claimed in claim 1 is characterized in that:

Described device also has the Purge gas feed system of supplying with Purge gas in described container handling, described Purge gas feed system has in described container handling the Purge gas supply line of supplying with described Purge gas and is arranged on the 3rd open and close valve on the described Purge gas supply line, described control part opens and closes described the 3rd open and close valve at phase reversal with pulse type opening and closing described first and second open and close valve with pulse type when.

5. film formation device as claimed in claim 4 is characterized in that:

Described Purge gas supply line is connected with described mist supply line in the downstream of described first open and close valve.

6. the film build method that semiconductor processes is used is characterized in that, comprising:

Heating devices spaced apart and be accumulated in the engineering of a plurality of processed substrates in the container handling,

In described container handling, supply with the engineering that is used for the unstrpped gas of build-up film on described processed substrate,

The gas mixing casing outside being arranged at described container handling supply with continuously be used for to described film import the impurity gas of impurity and be used to dilute described impurity gas diluent gas and when forming mist, in described container handling, supply with the engineering of described mist from described gas mixing casing, in this project, measured value based on the pressure in the described gas mixing casing of being measured by pressure gauge is supplied with described mist with pulse type, and

When supplying with described mist, supply with the engineering of described unstrpped gas with pulse type with pulse type.

7. film build method as claimed in claim 6 is characterized in that:

Have when supplying with described mist and described unstrpped gas, in described container handling, supply with the engineering of Purge gas at phase reversal with pulse type with pulse type.

Images