CN100456142C - Alignment mark and its producing method - Google Patents
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Abstract
This invention provides an alignment mark and its manufacturing method, mainly uses in mask and aligent crystal plate of photoetching installing, this alignment mark includes part one and part two structure, and part two includes number one and number two grating. The periodic time of the NO.1 grating is different from NO.2 and on the each side of part one structure. The NO.1 grating is high-order diffraction light amplifier style grating, and its basic period also has some sifting structure, it can transfer zero level and even number level diffraction to the other odd number level, and at the same time it can enhance number of odd number light intensity of diffraction. Comparing to the existing technology, the alignment mark of this invention is more compaction, and it can increase alignment precision and adaptability.
Description
Technical Field
The present invention relates to a lithography alignment technique, and more particularly, to an alignment mark and a method for manufacturing the same.
Background
Lithographic apparatus is used primarily in the manufacture of integrated circuits, ICs, or other microdevices. With a lithographic apparatus, multiple layers of masks having different mask patterns are sequentially imaged in precise alignment onto a wafer coated with photoresist. There are two types of lithography apparatus, one type being a stepper lithography apparatus, where a mask pattern is imaged on one exposure area of a wafer at a time, then the wafer is moved relative to the reticle, the next exposure area is moved under the mask pattern and the projection objective, and the mask pattern is again exposed on another exposure area of the wafer, and this process is repeated until all exposure areas on the wafer have an image of the mask pattern. Another type is a step-and-scan lithographic apparatus in which the mask pattern is not imaged by a single exposure, but rather by a scanning movement of the projected light field. During mask pattern imaging, the mask and wafer are moved simultaneously relative to the projection system and the projection beam.
In semiconductor manufacturing, in order to transfer the mask pattern onto the wafer correctly, a critical step is to align the mask with the wafer, i.e., calculate the position of the mask relative to the wafer, so as to meet the requirement of overlay accuracy. As feature size "CD" requirements become smaller, the requirements for Overlay accuracy "Overlay" and, consequently, alignment accuracy, become more stringent. The prior art has two alignment schemes, one is through-the-lens TTL on-axis alignment technique, and the other is OA off-axis alignment technique. Mask-wafer alignment using alignment marks is required before each photoresist exposure. In the off-axis alignment technique, a full-field alignment mark or a scribe line (scribe line) alignment mark located at a non-exposure region of a wafer is imaged on a reference plate, and wafer exposure field and mask pattern positioning is performed by determining deviation of the alignment mark position with respect to the reference mark at an ideal position.
The lithography alignment mainly includes bright field, dark field and grating diffraction techniques. Currently, most alignment methods used in lithography apparatuses are grating alignment. The grating alignment means that the illumination beam irradiates on the grating type alignment mark to be diffracted, and the diffracted light carries all information about the structure of the alignment mark. The multi-order diffraction light is scattered from the phase alignment grating at different angles, the plus or minus 1-order diffraction light of the diffraction light is collected after the zero-order light is filtered by the spatial filter, or the multi-order diffraction light (including the high-order) is collected to be subjected to interference imaging on a reference surface along with the improvement of the CD requirement, and the alignment center position is determined through the detection and signal processing of the photoelectric detector.
According to the alignment strategy of the photoetching device, the alignment marks can be divided into full-field alignment marks and field-by-field alignment marks, wherein the full-field alignment marks are generally two-dimensional marks, are positioned in a non-exposure area or a scribing groove of a wafer and simultaneously provide two directions which are vertical to each other for alignment; the field-by-field alignment mark is positioned in the wafer scribing groove and provides alignment in one dimension (horizontal or vertical direction) for the one-dimensional mark, and the two directions which are vertical to each other can be aligned through the two field-by-field alignment marks positioned in the two mutually vertical scribing grooves.
Typically, the alignment marks are periodic gratings, consisting of scribe lines and grooves. The grating may be a phase grating using the phase difference between light scattered at the upper and lower surfaces of the grating. The grating may also be an amplitude grating, consisting of two surface periodic structures with different reflection coefficients. The grating should contain as much period as possible to avoid edge effects. The influence of the edge roughness of the alignment mark on the alignment precision is random, so that the influence of the edge effect can be reduced by irradiating more grating periods, and the contrast of an alignment signal is improved. However, excessive grating period consumes scribe line resources, resulting in waste of the wafer, and therefore, the design of the alignment mark tends to use a smaller grating period and shorter grating lines.
Functionally, the alignment marks are generally classified into a coarse alignment mark and a fine alignment mark. In the course of rough alignment, the alignment mark on the mask or reference plate is stored in the computer, then the scattered light of the light source on the rough alignment mark is detected and imaged on the CCD camera, and the rough alignment mark structure is searched by image analysis and pattern recognition method to carry out rough alignment positioning of the wafer. The coarse alignment mark is also used to search for the fine alignment mark. In the fine alignment process, light scattered on the mark by a light source is collected by a microscope objective, and the position of the fine alignment mark is determined by the obtained light intensity or phase signal to perform fine alignment positioning of the wafer. The coarse alignment is generally a cross-shaped structure, and the fine alignment marks are grating-type structures parallel to each other and spaced at intervals, and the period width of the structures is about several micrometers, such as the coarse alignment and fine alignment mark structures shown in fig. 11.
In IC processing, the components of the alignment mark structure preferably have dimensions similar to the dimensions of the features of the semiconductor device to avoid undesirable side effects during IC processing. The problem of size correlation is overcome, and two methods are generally adopted, one is to shorten the grating period to improve the detection capability of the alignment mark on a high-level detection channel, and the detected spatial frequency determines the alignment precision and stability of the phase grating; the other is to use an enhanced fine grating to increase the intensity of the higher order diffracted light alignment signal.
Fig. 11 is a prior art alignment mark used by ASML corporation in the netherlands, and referring to fig. 11(a), the alignment mark VSPM is composed of cross-hatching and 4 sets of grating structures AH32, AH53, AH74 and CAH32, in which the basic grating periods of the grating structures AH32, AH53 and AH74 are the same and 16 μm, and the basic grating period of the grating structure CAH32 is 17.6 μm. The grating structures AH32, AH53 and AH74 are intensity enhanced gratings of the 3 rd, 5 th and 7 th order diffraction orders, respectively, with enhanced subdivision. CAH32 is also a 3-level enhanced grating, but the basic grating periods are different, thereby improving the alignment capture range. The enhancement type subdivision structure is characterized in that the light intensity of n-order diffraction orders of a basic grating is enhanced by n-order periodic subdivision on the basic grating period (P is 16 mu m), so that the alignment precision and the process adaptability of the photoetching device are improved. The overall VSPM alignment mark size is 700 μm by 72 μm, which fits into 80 μm wide scribe line trenches. In order to be suitable for a 40 μm wide scribe line groove, the width of the grating structure was shortened to 38 μm, and an NVSM alignment mark was formed as shown in fig. 11 (b).
Although a multi-segmented high-order diffraction order enhanced alignment grating mark is adopted, the alignment precision is improved, and the process adaptability is enhanced. However, the diffraction of the periodic enhancement type fine-structure grating still has the existence of zero-order diffraction light, and in the grating diffraction alignment system, the zero-order diffraction light is usually shielded by a diaphragm as background light, and the energy of the zero-order diffraction light cannot be effectively utilized; and the periodically subdivided enhancement type alignment mark can only realize the enhancement of the light intensity of one higher diffraction order at the same time.
Disclosure of Invention
The invention aims to provide a novel alignment mark and a manufacturing method thereof, which can effectively improve the alignment precision and the process adaptability of an alignment system of a photoetching device.
In order to achieve the above object, the present invention provides an alignment mark, which is mainly used for aligning a mask and a wafer of a lithography apparatus; the alignment mark comprises a first partial structure and a second partial structure, wherein the second partial structure comprises a first grating and a second grating. The period of the first grating and the period of the second grating are different from each other and are respectively distributed on two sides of the first partial structure. The first grating is a higher-order diffraction-enhanced grating including an aperiodic higher-order diffraction-enhanced subdivision structure within a fundamental period of the higher-order diffraction-enhanced grating.
The modulation point positions of the high-order diffraction light enhancement type subdivision structure in two half periods of the basic period of the high-order diffraction light enhancement type grating are the same, but the phases are reversed. The first grating and the second grating are both used for alignment in the same direction (horizontal or vertical).
The high-order diffraction light enhancement type grating can inhibit the light intensity of zero-order diffraction light and even-order diffraction light and enhance the light intensity of a plurality of odd-order diffraction light.
The second grating is a capture mark for improving the alignment capture range of the alignment system. The second grating may also be a higher order diffraction light enhanced grating having a higher order diffraction light enhanced subdivision structure.
The first part structure can be in the form of: cross lines, double cross lines, cross line frames, virtual cross lines, cross hairs and the like.
The first partial structure of the alignment mark and the first grating and the second grating constituting the second partial structure may be segmented structures.
The invention also provides a manufacturing method of the alignment mark, which is characterized in that a plurality of subdivision structures are arranged in the basic period of the alignment mark, and the intensity of diffracted light of a plurality of diffraction orders of the alignment mark can be enhanced simultaneously by carrying out space coordinate modulation, phase modulation and simultaneous modulation of space coordinates and phases on the subdivision structures.
The manufacturing method of the alignment mark can restrain the light intensity of zero-order and even-order diffraction light and enhance the light intensity of a plurality of odd-order diffraction light by performing space coordinate modulation on the subdivision structure in the basic period of the alignment mark.
The positions of the modulation points in the two half periods of the basic period are the same, but the phases are reversed; said subdivision is aperiodic; the subdivision structure may be a two-dimensional structure.
Due to the adoption of the technical scheme, compared with the prior art, the invention has the following advantages and positive effects:
1. the alignment mark comprises an aperiodic high-order diffraction light enhancement type subdivision structure, can inhibit the light intensity of zero-order diffraction light and even-order diffraction light, simultaneously enhances the light intensity of a plurality of odd-order diffraction light, improves the alignment signal intensity of the high-order diffraction light, and further improves the alignment precision of an alignment system.
2. The higher-order diffraction light enhanced subdivision structure generates smaller grating line width, can reduce the mark deformation caused by chemical mechanical planarization and other processes, and improves the process adaptability of the alignment mark.
3. The alignment mark has more compact structure and large capture range and can be used for a narrower scribing groove.
Drawings
The objects, specific structural features and advantages of the present invention will be further understood from the following description of the preferred embodiments of the present invention taken in conjunction with the accompanying drawings. Wherein,
FIG. 1 is a high order diffraction light enhanced subdivision of an alignment mark according to the present invention;
FIG. 2 is a diagram of a higher order diffraction light enhanced subdivision of an alignment mark according to the present invention;
FIG. 3 is a schematic view of an alignment mark according to the present invention;
FIG. 4 is a schematic view of a first portion of a structure and a corresponding mask or reference alignment mark according to an embodiment of the present invention;
FIG. 5 is a schematic view of another first partial structure and a corresponding mask or reference alignment mark according to an embodiment of the present invention;
FIG. 6 is a schematic view of another first partial structure and a corresponding mask or reference alignment mark according to an embodiment of the present invention;
FIG. 7 is a schematic view of another first partial structure and a corresponding mask or reference alignment mark according to an embodiment of the alignment mark of the present invention;
FIG. 8 is a schematic view of another first partial structure and a corresponding mask or reference alignment mark according to an embodiment of the present invention;
FIG. 9 is a schematic view of another first partial structure and a corresponding mask or reference alignment mark according to an embodiment of the alignment mark of the present invention;
FIG. 10 is a schematic view of a segmented structure of an alignment mark according to the present invention;
fig. 11 is a prior art alignment mark.
Detailed Description
The present invention will be further described with reference to the following specific examples and drawings, but the scope of the present invention should not be limited thereto.
FIG. 1 shows a high-order diffraction light enhanced subdivision structure of an alignment mark according to the present invention. The basic principle of higher order diffraction light enhanced subdivision is based on the even array of reflective Dammann (Dammann) grating principle.
A dammann grating is a phase grating with a specific aperture function, which produces a fraunhofer diffraction pattern (fourier spectrum) of incident light waves as a certain number of equal intensity spots of a lattice. The Dammann grating can transfer the energy of zero-order diffraction spots to positive and negative orders at the edge, belongs to a Fourier transform beam splitter, has high diffraction efficiency, and the light intensity uniformity of the spot array is not influenced by the distribution of incident light waves. The Dammann grating array can eliminate zero-order and even-order diffraction spectrums, and obtain diffraction spots of odd-order diffraction spots.
As shown in FIG. 1, the phase of the higher-order diffraction-enhanced mark subdivision takes on two values, e.g., 0 and π/2, and contains a set of modulation points with coordinates (a) within the fundamental period Pi，bi) The spatial coordinates (the number of grooves and the position of the groove width) in the period are modulated arbitrarily, or phase modulation is performed, or the spatial coordinates and the phase are modulated simultaneously. When the illumination light beam of the alignment system of the photoetching device vertically irradiates on the alignment mark with the high-order diffraction light enhancement type subdivision structure, the energy of zero-order diffraction spots and even-order diffraction spots can be inhibited, and meanwhile, the light intensity of a plurality of odd-order diffraction spots is enhanced, so that a group of 1 × M (or M × 1) array equal-light-intensity diffraction spots are obtained.
The modulation point positions in the two half periods are the same, but the phases are opposite, namely, the groove positions in the half periods from 0 to P/2 correspond to the groove positions in the half periods from P/2 to P, and conversely, the groove positions in the half periods from 0 to P/2 correspond to the groove positions in the half periods from P/2 to P. The enhanced mark subdivision has a phase depth h of pi/2 and the subdivision is generally aperiodic.
The position of the modulation point is generally determined by adopting an optimization algorithm, and the total diffraction efficiency, the uniformity of the light intensity of the diffraction light spot and the minimum line width are generally used as boundary conditions. By setting a suitable boundary condition target value, higher diffraction efficiency and smaller line width can be obtained, and the line width can be equivalent to the Characteristic Dimension (CD) of a semiconductor device, thereby improving the process adaptability.
In contrast, the periodic enhanced subdivision structure of the prior art has a strong zero-order light spot, while in grating diffraction alignment, the zero-order light spot is generally shielded as background light, the energy of the zero-order light spot is not effectively utilized, and the periodic enhanced subdivision structure can only enhance the light intensity of one higher diffraction order at the same time. The high-order diffraction light enhancement type subdivision structure of the alignment mark has the advantages that: the energy of zero-order light spots and even orders can be transferred to other odd orders, the light intensity of a plurality of odd-order diffracted lights is enhanced, and the minimum line width can be designed to be close to the characteristic size of the semiconductor device.
FIG. 2 shows an embodiment of a higher order diffraction light enhanced subdivision structure of an alignment mark according to the present invention. Referring to fig. 2, when M is 8, the higher-order diffraction light enhanced subdivision structure has 10 modulation points in one period, the positions of the modulation points normalized by the period are respectively 0, 0.1812, 0.2956, 0.3282, 0.4392, 0.5, 0.6812, 0.7956, 0.8282 and 0.9392, the minimum line width is 0.016, the maximum diffraction efficiency can reach 83%, and the nonuniformity is 0.00004, so that diffraction spots in a 1 × 8 array are obtained, diffraction spots in the zeroth order and the even-order are suppressed, and meanwhile, the light intensities of diffraction spots in the ± 1 st order, the ± 3 rd order, the ± 5 th order and the ± 7 th order are enhanced.
Referring to fig. 3, an alignment mark according to an embodiment of the present invention includes two parts: a first partial structure 1 for coarse alignment and a second partial structure 2 for fine alignment. The first partial structure 1 is located in the center of the entire alignment mark and the second partial structure 2 comprises a first grating 21 and a second grating 22. The period of the first grating 21 and the fundamental period of the second grating 22 are different from each other and are distributed on both sides of the first partial structure 1, respectively. Both gratings 21 and 22 are used for alignment in the same direction (horizontal or vertical).
The first grating 21 has a basic grating period P1Of higher order diffraction light-enhanced grating of fundamental period P1(shown in enlarged scale) is an aperiodic, higher order diffraction light-amplifying subdivision. The high-order diffraction light enhancement type subdivision structure restrains the light intensity of zero-order diffraction light and even-order diffraction light, enhances the light intensity of odd-order diffraction light, and the minimum line width of the subdivision structure can be close to the characteristic size of a semiconductor device. For example, as shown in FIG. 3, and with reference to FIG. 2, first grating 21 may be a higher order diffraction light enhancement grating of 1, 3, 5, and 7 orders while achieving enhancement of the 1, 3, 5, and 7 orders of diffraction.
In the alignment process, interference fringes formed by each stage of diffracted light of the alignment illumination beam (e.g., multi-wavelength laser source or broadband light source) on the first grating 21 respectively penetrate through corresponding reference alignment marks or mask alignment marks (not shown) to form different periods (the periods are respectively P)1/2、P1/6、P110 and P114)/alignment signal.
The second grating 22 has a fundamental period P2As a capture marker, the capture range was made to be: p + C1P2/[2(P1-P2)]For example, when P1＝16μm，P2＝P1When (1+0.1) ═ 17.6 μm, the capture range was ± 44 μm. The second grating 22 may be a level 1 capture mark, period P2＝P1(1 ± s), typically, 0.1 or 0.05; the second grating 22 may in turn capture marks for 3 or 5 levels, corresponding to a period P2＝P1[ 1. + -. ε ] or P2＝P1(1. + -. ε) × (5); the second grating 22 may also be an n-level capture mark, corresponding to period P2＝P1N × (1 ± epsilon). Similarly, the second grating 22 may be a higher-order diffraction-type diffraction grating including an aperiodic higher-order diffraction-type fine structure.
If the alignment mark structure is combined with a certain alignment system and the maximum + -7 orders of diffraction light is detected, the repeated alignment precision can reach 1.14 nm. Meanwhile, the smaller line width of the grating can reduce the mark deformation caused by chemical mechanical planarization and improve the process adaptability. To accommodate narrower scribe lines, the grating line size of the alignment marks can be designed to be short, e.g., < 40 μm. The higher order diffraction light enhanced alignment marks having the aperiodic subdivision structure described in the present invention are more compact in structure than the periodic enhanced alignment marks VSPM and NVSM of the prior art 4-segment structure.
The alignment mark structure is a one-dimensional mark, is positioned in the wafer scribing groove and provides alignment in one-dimensional direction (horizontal or vertical direction), and two directions (horizontal and vertical directions) which are vertical to each other can be aligned through two alignment mark structures which are vertical to each other.
The first partial structure 1 in the alignment mark according to the invention is shown in fig. 4 in the form of a cross and the corresponding mask or reference alignment mark 9 is in the form of a double cross consisting of four sets of mutually perpendicular, opaque, parallel double lines, so that during the alignment process a double-line-to-single-line alignment is formed. In other embodiments of the invention, the first partial structure 1 has other structures than those shown in the embodiments. Furthermore, the structure of the mask or reference alignment mark 9 needs to be changed to achieve alignment according to the change of the structure of the first partial structure 1.
The first partial structure 1 shown in fig. 5 is in the form of a cross-hair, and the corresponding mask or reference alignment mark 9 is in the form of a cross-hair, consisting of two light-tight oblique lines crossing each other. And forming an alignment mode of clamping a cross line by a cross oblique line in the alignment process, wherein the cross line is positioned at the position of the angle bisector of the cross oblique line.
The first partial structure 1 shown in fig. 6 is in the form of a cross frame, consisting of a closed cross frame, and the corresponding mask or reference alignment mark 9 is in the form of a non-transparent cross wire, thus forming an alignment of the cross frame-clamped cross wire.
The first partial structure 1 shown in fig. 7 is in the form of a double cross, consisting of four sets of mutually perpendicular parallel double lines, and the corresponding mask or reference alignment mark 9 is in the form of a light-tight cross, thus forming a double-line-in-single-line alignment.
The first partial structure 1 shown in fig. 8 is in the form of a dashed cross, comprising a central cross 1a and a peripheral cross 1 b. The corresponding mask or reference alignment mark 9 is in the form of a "well" mark, consisting of four opaque straight lines intersecting each other to form a "well" shape, including a central frame and peripheral double crosses. During alignment, the central cross line 1a of the virtual cross line is positioned in the central frame of the shape of a Chinese character 'jing', and the peripheral cross line 1b and the double cross lines form a single line alignment mode of the double-wire clamp.
The first partial structure 1 shown in fig. 9 is in the form of a cross, which consists of four oblique lines, and the corresponding mask or reference alignment mark 9 is in the form of a light-tight cross, whereby an alignment of the cross is formed during the alignment, the cross being at the position of the bisector of each oblique line of the cross.
Referring to fig. 10, the second gratings 22 of the first and second partial structures 1 and 2 in the alignment mark structure embodiment of the present invention are illustrated as being segmented structures. The alignment marks in the invention can be segmented structures, and particularly in a Deep Trench (Deep Trench) process, the segmented structures are more beneficial to process manufacturing in order to be suitable for the process design principle; in addition, the deformation of the mark caused by chemical mechanical planarization and metal sputtering can be reduced, and the process adaptability is improved.
Claims (18)
1. An alignment mark is mainly used for aligning a mask and a wafer of a photoetching device, and comprises a first partial structure and a second partial structure, and is characterized in that the second partial structure comprises a first grating and a second grating, and the periods of the first grating and the second grating are different and are respectively distributed on two sides of the first partial structure; the first grating is a high-order diffraction light enhancement type grating; the fundamental period of the high-order diffraction enhanced grating comprises an aperiodic high-order diffraction enhanced subdivision structure.
2. An alignment mark as defined in claim 1, wherein: the modulation point positions of the high-order diffraction light enhancement type subdivision structure in two half periods of the basic period of the high-order diffraction light enhancement type grating are the same, but the phases are reversed.
3. An alignment mark as defined in claim 1, wherein: the first grating and the second grating are both used for alignment in the same direction.
4. An alignment mark as defined in claim 1, wherein: the high-order diffraction light enhancement type grating can inhibit the light intensity of zero-order diffraction light and even-order diffraction light and enhance the light intensity of a plurality of odd-order diffraction light.
5. An alignment mark as defined in claim 1, wherein: the second grating is a capture mark.
6. An alignment mark as defined in claim 5, wherein: the second grating may be a higher order diffraction light enhanced grating having a higher order diffraction light enhanced subdivision structure.
7. An alignment mark as defined in claim 1, wherein: the first grating and the second grating may be segmented structures.
8. An alignment mark as defined in claim 1, wherein: the first partial structure is in the form of a cross.
9. An alignment mark as defined in claim 1, wherein: the first part structure is in the form of a cross wire frame consisting of a closed cross frame.
10. An alignment mark as defined in claim 1, wherein: the first part structure is in a double cross-shaped form consisting of four groups of mutually vertical parallel double lines.
11. An alignment mark as defined in claim 1, wherein: the first partial structure is in the form of a dashed cross comprising a central cross and a peripheral cross.
12. An alignment mark as defined in claim 1, wherein: the first part structure is in a cross wire form consisting of four oblique lines.
13. An alignment mark according to any of claims 8 to 12, wherein: the first part-structure may be a segmented structure.
14. A method for manufacturing an alignment mark is characterized in that a plurality of subdivision structures are arranged in a basic period of the alignment mark, and the subdivision structures are subjected to space coordinate modulation, phase modulation and space coordinate and phase simultaneous modulation so as to simultaneously enhance the intensity of diffracted light of a plurality of diffraction orders of the alignment mark.
15. The method of manufacturing an alignment mark according to claim 14, wherein the intensity of the zero-order and even-order diffracted lights is suppressed and the intensity of the plurality of odd-order diffracted lights is enhanced by spatially coordinate-modulating the fine-divided structure in the fundamental period of the alignment mark.
16. The method of claim 15, wherein the modulation point positions in both half periods of the fundamental period are identical but inverted in phase.
17. The method of claim 14, wherein the subdivision is non-periodic.
18. The method of claim 14, wherein the sub-structure is a two-dimensional structure.
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| CN100527000C (en) * | 2007-08-31 | 2009-08-12 | 上海微电子装备有限公司 | Aligning mark and aligning system |
| CN101149564B (en) * | 2007-09-04 | 2010-05-19 | 上海微电子装备有限公司 | Alignment mark and its imaging optical system and imaging method |
| CN101419407B (en) * | 2007-10-24 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | Stacked photolithography alignment mark |
| US8130366B2 (en) * | 2008-03-21 | 2012-03-06 | Asml Netherlands B.V. | Method for coarse wafer alignment in a lithographic apparatus |
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| CN105549138B (en) * | 2016-03-11 | 2017-10-24 | 中国科学院微电子研究所 | Seven-order diffraction grating structure, preparation method thereof and wafer photoetching alignment method |
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