CN100406618C - Method and device for processing complex three-dimensional microstructure on metal surface - Google Patents
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Abstract
涉及采用约束刻蚀剂层技术在金属表面进行复杂三维微结构的加工。步骤为将带有微结构的加工工具固定于固定架上;刻蚀溶液注入容器;加工工具进入溶液;启动电化学系统,在加工工具表面产生刻蚀剂;利用清除剂将刻蚀剂层压缩到纳米级或微米级厚度;启动驱动装置,对工件刻蚀,使工件表面凹陷脱离刻蚀剂层,至刻蚀完毕。加工装置设加工工具、固定架、驱动装置、计算机、电化学系统。可进行各种复杂三维微结构的批量复制加工;一步完成批量微结构的刻蚀,省去光刻中的涂胶、曝光、显影和去胶,降低成本,提高了加工精度和表面平整度;加工过程具有距离敏感性,可通过精确控制模板的进给距离精确控制加工量。
It involves the processing of complex three-dimensional microstructures on metal surfaces using the technology of constrained etchant layers. The steps are to fix the processing tool with the microstructure on the fixed frame; inject the etching solution into the container; enter the processing tool into the solution; start the electrochemical system to generate etchant on the surface of the processing tool; use the scavenger to compress the etchant layer To nano-level or micron-level thickness; start the driving device, etch the workpiece, so that the surface of the workpiece is depressed and separated from the etchant layer, until the etching is completed. The processing device includes a processing tool, a fixed frame, a driving device, a computer, and an electrochemical system. It can carry out batch replication processing of various complex three-dimensional microstructures; complete the etching of batch microstructures in one step, eliminating the need for gluing, exposure, development and degumming in photolithography, reducing costs, and improving processing accuracy and surface smoothness; The machining process is distance-sensitive, and the machining volume can be precisely controlled by precisely controlling the feeding distance of the template.
Description
(1)技术领域 (1) Technical field
本发明涉及一种采用电化学方法的微加工方法,尤其是采用约束刻蚀剂层技术在金属表面进行复杂三维微结构的加工方法及其装置。The invention relates to a microprocessing method using an electrochemical method, in particular to a processing method and a device for performing complex three-dimensional microstructures on a metal surface by using a constrained etchant layer technology.
(2)背景技术 (2) Background technology
微加工技术是微机电系统和微光机电系统技术的关键。现有的微加工技术有两类,一类为逐点加工技术,如激光束、电子束和离子束等高能束加工、微细电火花加工和扫描探针显微镜(SPM)加工(含STM,SECM,AFM等)。在这一类型的加工方法中,每一次加工的范围只是一个点,因此,加工效率很低,不利于批量加工。另一类为微结构的批量加工技术,如IC工艺、LIGA技术、约束刻蚀剂层技术、微接触印刷技术、EFAB技术、等离子体刻蚀技术和反应性离子刻蚀技术等。在这一类技术方法中,每一次可加工一批(或一个阵列)微结构。如果按照加工环境和介质对微细加工技术进行分类,一类为湿法加工,另一类为干法加工,方法的种类同上。Micromachining technology is the key to MEMS and MEMS technology. There are two types of existing micro-processing technology, one is point-by-point processing technology, such as high-energy beam processing such as laser beam, electron beam and ion beam, micro-EDM and scanning probe microscope (SPM) processing (including STM, SECM) , AFM, etc.). In this type of processing method, the range of each processing is only one point, so the processing efficiency is very low, which is not conducive to batch processing. The other is the batch processing technology of microstructure, such as IC technology, LIGA technology, constrained etchant layer technology, microcontact printing technology, EFAB technology, plasma etching technology and reactive ion etching technology. In this type of technical method, a batch (or an array) of microstructures can be processed at a time. If the microfabrication technology is classified according to the processing environment and medium, one is wet processing and the other is dry processing, and the types of methods are the same as above.
用IC工艺对金属材料进行刻蚀只适用于制作侧面基本垂直的立体结构(这种简单三维立体结构应称为2.5维,以区别于真正的复杂三维结构),且又很难作到绝对垂直,这是由于多数金属材料在腐蚀液中的腐蚀是各向同性的,由此产生侧向钻蚀,从而引起微孔或微沟道的横向扩展。也正因此,常规光刻工艺不能在金属表面加工出深宽比很大的微结构。要加工复杂的三维立体结构,如球面和锥面,就需要采用多步刻蚀,即所谓套刻工艺,其分辨率非常有限。光刻工艺本来就相当复杂,这种多步刻蚀组成的套刻工艺就更复杂。而且对于超微结构而言,每一步精密对准更为困难。Etching metal materials with IC technology is only suitable for making three-dimensional structures with basically vertical sides (this simple three-dimensional three-dimensional structure should be called 2.5-dimensional to distinguish it from the real complex three-dimensional structure), and it is difficult to achieve absolute vertical , this is because the corrosion of most metal materials in the corrosive solution is isotropic, resulting in lateral undercutting, which causes the lateral expansion of micropores or microchannels. It is precisely because of this that conventional photolithography processes cannot process microstructures with large aspect ratios on metal surfaces. To process complex three-dimensional structures, such as spheres and cones, it is necessary to use multi-step etching, the so-called overlay process, and its resolution is very limited. The photolithography process is inherently quite complicated, and the overlay process composed of multi-step etching is even more complicated. And for ultrafine structures, fine alignment at each step is more difficult.
微接触印刷方法(microcontact printing,简称μCP)是美国哈佛大学Whitesides教授研究组(Kumar A,Whitesides G M,Appl.Phys.Lett.1993,63:2002;Kumar A,Biebuyck H A,Whitesides G M,Langmuir,1994,10:1498.)为主推出的一种微加工方法。这种方法利用硅橡胶塑铸加工的高分辨,以具有微结构的硅片为模板,在硅橡胶表面模塑出该微结构的表面图形,这便成为后面微接触印刷加工用的弹性“印章”。以金膜的微加工为例,把“印章”蘸上烷基硫醇“墨水”,然后在金膜表面“盖印”,微图形便由这种“墨水”印到了金表面。烷基硫醇“墨水”在金表面形成自组装分子单层,这种自组装分子单层在一些化学刻蚀液(如KCN+KOH+O2)中,起到光刻胶的作用,即对化学刻蚀液有阻隔效果。经过化学刻蚀以后,就在金表面得到与原微结构一样的精细结构。这一技术和常规光刻技术一样,只适用于制作侧面垂直的立体结构,无法加工复杂的三维立体结构,而且很难制造深宽比较大的微结构。Microcontact printing (microcontact printing, referred to as μCP) is a research group of Professor Whitesides of Harvard University (Kumar A, Whitesides G M, Appl. , 10:1498.) A micromachining method mainly introduced. This method takes advantage of the high resolution of silicone rubber plastic casting, uses the silicon chip with microstructure as a template, and molds the surface pattern of the microstructure on the surface of silicone rubber, which becomes an elastic "stamp" for subsequent microcontact printing processing. ". Taking the micromachining of gold film as an example, the "seal" is dipped in alkanethiol "ink", and then "stamped" on the surface of the gold film, and the micrographics are printed on the gold surface by this "ink". Alkylthiol "ink" forms a self-assembled molecular monolayer on the gold surface, and this self-assembled molecular monolayer acts as a photoresist in some chemical etching solutions (such as KCN+KOH+O 2 ), namely It has a barrier effect on chemical etchant. After chemical etching, the same fine structure as the original microstructure is obtained on the gold surface. This technology, like conventional photolithography, is only suitable for making three-dimensional structures with vertical sides, and cannot process complex three-dimensional structures, and it is difficult to manufacture microstructures with large aspect ratios.
将光刻与电化学阳极溶解相结合,也可以对金属材料进行加工。这种方法(Datta M,J.Elctrochem.Soc.1995,142:3801-805.)的优点是可以使用腐蚀性小的中性盐电解质,如Na2SO4,NaCl,NaNO3等,对环境污染小,适用材料面广,刻蚀速度较快。但存在如下缺点:1)不能加工出复杂的三维结构(如各种曲面),只能直上直下地对材料进行刻蚀加工(2.5维);2)金属的微观结构决定了其阳极溶解的不均匀性,一般来说,阳极溶解面是相当粗糙的,故较难获得微观光滑的刻蚀面;3)金属的阳极溶解一般是各向同性的,虽然刻蚀电流分布可通过改变某些外部条件而得到一定程度的控制,但不可避免地会发生在掩膜下的侧向钻蚀,这将影响加工精度;4)仅限于对导电材料进行加工。Metallic materials can also be processed by combining photolithography with electrochemical anodic dissolution. The advantage of this method (Datta M, J.Elctrochem.Soc.1995, 142:3801-805.) is that it can use less corrosive neutral salt electrolytes, such as Na 2 SO 4 , NaCl, NaNO 3 , etc., which are harmful to the environment Small pollution, wide range of applicable materials, fast etching speed. However, there are the following disadvantages: 1) complex three-dimensional structures (such as various curved surfaces) cannot be processed, and the material can only be etched directly up and down (2.5 dimensions); 2) the microstructure of the metal determines its anodic dissolution. Uniformity, generally speaking, the anodic dissolution surface is quite rough, so it is difficult to obtain a microscopically smooth etching surface; 3) The anodic dissolution of metals is generally isotropic, although the etching current distribution can be changed by changing some external Conditions can be controlled to a certain extent, but undercutting under the mask will inevitably occur, which will affect the processing accuracy; 4) It is limited to processing conductive materials.
LIGA---将同步辐射X射线光刻和电沉积相结合来制造微结构的办法(Romankiw L T,Electrochimica Acta,1997,42:2985.),称为LIGA技术(Lithografie Galvanoformung Abformung的简称,为光刻、电铸和铸塑的组合工艺)。它是德国卡尔斯鲁厄核研究所的研究者于20世纪80年代末发明的。这一方法可以获得很高深宽比的微结构,且光刻出的微结构的侧壁准直性很好。但LIGA工艺存在如下缺点:1)它需要昂贵的同步辐射X-射线源,这使它的推广应用受到较大限制;2)和常规光刻工艺一样,它也难于加工复杂三维立体结构,如球面、锥面等等。LIGA --- a method of combining synchrotron radiation X-ray lithography and electrodeposition to manufacture microstructures (Romankiw L T, Electrochimica Acta, 1997, 42: 2985.), known as LIGA technology (abbreviation of Lithografie Galvanoformung Abformung, for Combination process of photolithography, electroforming and casting). It was invented in the late 1980s by researchers at the Karlsruhe Institute for Nuclear Research in Germany. This method can obtain a microstructure with a very high aspect ratio, and the sidewall alignment of the photoetched microstructure is very good. However, the LIGA process has the following disadvantages: 1) it requires an expensive synchrotron radiation X-ray source, which limits its popularization and application; 2) like the conventional photolithography process, it is also difficult to process complex three-dimensional structures, such as Spheres, cones, etc.
EFAB(Electrochemical Fabrication的简称),是美国南加州大学信息科学研究所AdamCohen教授研究组(Cohen A,et al,12th IEEE International Microelectro-mechanical SystemsConference,1999,Technical Digest,IEEE.Cohen A et al,Solid Freeform Fabrication Symposium1998,Proceedings,The University of Texas at Austin.)在1999年研究出来的。它是一种采用电化学方法制作三维多层微结构的技术。EFAB的基本原理是:先用3D CAD软件将要加工的图形分解成一系列适用于制作成光刻模板的二维图形,然后可由此制作一系列掩膜,接下来在电解槽中将所需金属以及牺牲层金属按照掩膜的图形一层层分别电沉积出来,最后将牺牲层金属溶解以后就得到所要材料的图形。使用EFAB技术,如果要加工复杂三维立体结构,如半球体和锥体,就需要制作很多模板,这和用常规光刻工艺加工复杂三维立体结构的原理(套刻)类似,工艺复杂。EFAB (abbreviation for Electrochemical Fabrication) is the research group of Professor Adam Cohen, Institute of Information Science, University of Southern California (Cohen A, et al, 12th IEEE International Microelectro-mechanical Systems Conference, 1999, Technical Digest, IEEE. Cohen A et al, Solid Freeform Fabrication Symposium1998, Proceedings, The University of Texas at Austin.) Researched in 1999. It is a technology that uses electrochemical methods to fabricate three-dimensional multilayer microstructures. The basic principle of EFAB is: first use 3D CAD software to decompose the graphics to be processed into a series of two-dimensional graphics suitable for making lithography templates, and then a series of masks can be made from them, and then the required metals and The sacrificial layer metal is electrodeposited layer by layer according to the pattern of the mask, and finally the pattern of the desired material is obtained after the sacrificial layer metal is dissolved. Using EFAB technology, if you want to process complex three-dimensional structures, such as hemispheres and cones, you need to make a lot of templates, which is similar to the principle of processing complex three-dimensional structures with conventional photolithography (overlay), and the process is complicated.
德国Fritz-Haber研究所的Schuster等人在2000年《Science》杂志(Schuster R,Kircher V,Allongue P,Ert G,Science.2000,289:98.)上报道了应用超短电位脉冲进行金属微加工的方法。它的基本原理是:在电解质溶液中,被加工工件(作为阳极)上双电层的充电时间常数随着工具电极(作为阴极)与被加工工件之间溶液电阻的增大而增大,由于工件表面距离工具电极越近之处,二者之间的溶液电阻越小,双电层充电越快。当在工件电极和工具电极之间加一超短电位脉冲,在该脉冲范围内,只有工具电极正下方的被加工工件(阳极)的双电层冲电到足以发生阳极溶解的电位,而其它地方则由于距离远,电阻大,充电慢,而不发生阳极溶解或溶解量极微,这便产生了工具电极正下方工件表面的选择性溶解(刻蚀),通过工具电极的移动,可加工出简单的三维结构。这种方法的缺点是:1)要产生皮秒级超短强脉冲是相当困难的;2)在较大平面上批量加工复杂三维微结构时,由于电流分布很难控制,故分辨率很低。到目前为止,还没有一种成本较低、工艺简单、批量加工分辨率高的复杂三维超微金属结构加工方法。People such as Schuster of the Fritz-Haber Institute in Germany reported the application of ultra-short potential pulses for metal microparticles in the 2000 "Science" magazine (Schuster R, Kircher V, Allongue P, Ert G, Science.2000, 289:98.) Processing method. Its basic principle is: in the electrolyte solution, the charging time constant of the electric double layer on the processed workpiece (as the anode) increases with the increase of the solution resistance between the tool electrode (as the cathode) and the processed workpiece, due to The closer the workpiece surface is to the tool electrode, the smaller the solution resistance between the two, and the faster the electric double layer charges. When an ultra-short potential pulse is applied between the workpiece electrode and the tool electrode, within the pulse range, only the electric double layer of the workpiece (anode) directly below the tool electrode is charged to a potential sufficient for anodic dissolution, while the other In other places, due to the long distance, large resistance, and slow charging, no anode dissolution or a very small amount of dissolution occurs, which results in selective dissolution (etching) of the workpiece surface directly below the tool electrode. Through the movement of the tool electrode, it can be processed A simple three-dimensional structure. The disadvantages of this method are: 1) It is quite difficult to generate picosecond-level ultrashort strong pulses; 2) When batch processing complex three-dimensional microstructures on a large plane, the resolution is very low because the current distribution is difficult to control . So far, there is no complex three-dimensional ultrafine metal structure processing method with low cost, simple process, and high batch processing resolution.
(3)发明内容 (3) Contents of the invention
本发明旨在提供一种可克服上述缺点,主要用于在金属表面进行复杂三维微结构的加工方法及其装置。The present invention aims to provide a processing method and its device which can overcome the above-mentioned shortcomings and are mainly used for processing complex three-dimensional microstructures on metal surfaces.
本发明的加工工艺方法为:Processing method of the present invention is:
1).将带有微结构的加工工具固定于固定架上;1). Fix the processing tool with microstructure on the fixed frame;
2).将刻蚀溶液注入容器;2). Pour the etching solution into the container;
3)移动固定架,使加工工具进入刻蚀溶液;3) Move the fixed frame to make the processing tool enter the etching solution;
4).启动电化学系统,在加工工具表面产生刻蚀剂;4). Start the electrochemical system to generate etchant on the surface of the processing tool;
5)利用刻蚀溶液中的清除剂将刻蚀剂层压缩到纳米级或微米级厚度;5) compressing the etchant layer to a nanoscale or micron-scale thickness using a scavenger in the etching solution;
6).启动控制加工工具与被加工工件之间相对距离的驱动装置,将带有微米或纳米级厚度的刻蚀剂层的加工工具逐步向被加工工件移动,当加工工具上的刻蚀剂层包络面的最凸出点接触到被加工工件时,即开始对被加工工件进行刻蚀,刻蚀使被加工工件表面凹陷从而脱离刻蚀剂层,刻蚀便停止;6). Start the driving device that controls the relative distance between the processing tool and the processed workpiece, and gradually move the processing tool with a micron- or nanometer-thick etchant layer to the processed workpiece. When the etchant on the processing tool When the most protruding point of the enveloping surface of the layer touches the workpiece to be processed, it starts to etch the workpiece to be processed, and the etching makes the surface of the workpiece to be recessed to separate from the etchant layer, and the etching stops;
7)驱动装置不断地将加工工具向被加工工件移动以保持刻蚀剂层能始终与被加工工件接触,从而使刻蚀不断地进行,至刻蚀完毕,加工工具离开被加工工件表面。7) The driving device continuously moves the processing tool to the workpiece to keep the etchant layer in contact with the workpiece, so that the etching continues. When the etching is completed, the processing tool leaves the surface of the workpiece.
本发明所说的金属表面复杂三维微结构加工装置设有加工工具、固定架、驱动装置、信息处理计算机、电化学系统,加工工具固定于固定架的下部,固定架的上部接驱动装置的垂直轴微驱动控制器,垂直轴微驱动控制器接信息处理计算机。电化学系统设有恒电位仪、辅助电极、参比电极、容器,容器中装入刻蚀溶液,加工工具与固定架作为恒电位仪的工作电极接至恒电位仪,辅助电极与参比电极的一端接恒电位仪,另一端插入容器内的刻蚀溶液中,容器设于驱动装置的水平轴微驱动控制器上。The metal surface complex three-dimensional microstructure processing device of the present invention is provided with processing tool, fixed frame, driving device, information processing computer, electrochemical system, and processing tool is fixed on the bottom of fixed frame, and the top of fixed frame is connected to the vertical of driving device. An axis micro-drive controller, and a vertical-axis micro-drive controller connected to an information processing computer. The electrochemical system is equipped with a potentiostat, an auxiliary electrode, a reference electrode, and a container. The etching solution is placed in the container, and the processing tool and the fixing frame are connected to the potentiostat as the working electrode of the potentiostat. The connection between the auxiliary electrode and the reference electrode One end is connected to a potentiostat, the other end is inserted into the etching solution in the container, and the container is set on the horizontal axis micro-drive controller of the driving device.
其中,加工工具可采用带有高分辨率复杂三维立体图形的模板。Among them, the processing tool can adopt a template with high-resolution complex three-dimensional graphics.
被加工工件为金属材料,驱动装置用于控制上述模板和工件之间相对距离。装于容器(容器可采用电解池等)中的刻蚀溶液浸没上述模板和工件,并能在特定条件下产生刻蚀剂,相关的电化学系统用以导致模板表面的刻蚀溶液发生相关的电化学反应而生成能刻蚀工件的刻蚀剂,刻蚀溶液中含有清除剂(或称捕捉剂),它能够与模板表面的刻蚀剂在刻蚀溶液中发生快速化学反应而使刻蚀剂寿命缩短。由于刻蚀剂寿命缩短而只能扩散很短距离,所以在模板表面形成的刻蚀剂层极薄,称之为约束刻蚀剂层。此约束刻蚀剂层的包络面以极高的分辨率保持了模板的复杂三维立体图形。The workpiece to be processed is a metal material, and the driving device is used to control the relative distance between the template and the workpiece. The etching solution contained in the container (the container can use an electrolytic cell, etc.) immerses the above-mentioned template and workpiece, and can generate etchant under specific conditions, and the relevant electrochemical system is used to cause the etching solution on the surface of the template to generate related The electrochemical reaction generates an etchant that can etch the workpiece. The etching solution contains a scavenger (or capture agent), which can react rapidly with the etchant on the surface of the template in the etching solution to make the etching The life of the agent is shortened. Due to the shortened lifetime of the etchant, it can only diffuse for a short distance, so the etchant layer formed on the surface of the template is extremely thin, which is called a constrained etchant layer. The enveloping surface of this constrained etchant layer preserves the complex three-dimensional pattern of the template at extremely high resolution.
所说的模板,其表面带有与所需要加工的微结构互补的微结构;也可以是极光滑的平面(微结构的一个极限)(粗糙度Ra<5nm),其互补的微结构也是极光滑的平面。Said template has a microstructure that is complementary to the microstructure that needs to be processed on its surface; it can also be an extremely smooth plane (a limit of the microstructure) (roughness Ra<5nm), and its complementary microstructure is also extremely smooth. smooth surface.
模板可采用惰性导电材料或为非导电材料覆盖以导电膜,在刻蚀溶液中以及在产生刻蚀剂的电极电位下,该惰性导电材料不发生化学的或电化学腐蚀。所说的惰性导电材料为铂或金的一种。The template can be made of an inert conductive material or a non-conductive material covered with a conductive film, and the inert conductive material will not be chemically or electrochemically corroded in the etching solution and under the electrode potential of the etchant. Said inert conductive material is one of platinum or gold.
被加工工件的材料可以是铜、镍、铝、钛和镉等金属。The material of the workpiece to be processed can be metals such as copper, nickel, aluminum, titanium and cadmium.
所说的固定架可由不锈钢材料制成,浸入刻蚀溶液的部分被耐蚀的涂层绝缘保护起来。Said fixing frame can be made of stainless steel, and the part immersed in etching solution is insulated and protected by corrosion-resistant coating.
具有微结构的加工工具(例如模板)以机械方式或用导电胶固定在固定架上。固定架(连同加工工具,例如模板)被安装在一个由计算机控制的驱动装置上。The processing tool with the microstructure (eg template) is fixed on the holder mechanically or with conductive glue. The fixture (together with the processing tool, such as the template) is mounted on a computer-controlled drive.
驱动装置设有可在X、Y、Z三个方向进行纳米级步进的进给系统或驱动控制器,以控制加工工具和工件之间相对距离和位置。The drive device is equipped with a feed system or a drive controller that can perform nanoscale steps in the three directions of X, Y, and Z, so as to control the relative distance and position between the processing tool and the workpiece.
所说的电解池被安装在驱动装置的XY为驱动控制器的水平工作台上,其位置处于固定架的下方。Said electrolytic cell is installed on the horizontal workbench where the XY of the driving device is the driving controller, and its position is below the fixed frame.
所说的刻蚀溶液含有Fe+2,Cl-1,NO3 -1,NO2 -1,SO3 -2,SO4 -2,PO3 -3,OH-或F-1之中的一种或几种,其浓度范围为0.01-1M。刻蚀溶液被装在电解池中。The etching solution contains one of Fe +2 , Cl -1 , NO 3 -1 , NO 2 -1 , SO 3 -2 , SO 4 -2 , PO 3 -3 , OH - or F -1 One or more species, the concentration range is 0.01-1M. An etching solution is contained in an electrolytic cell.
被加工工件被水平地置于电解池的底部。The workpiece to be processed is placed horizontally on the bottom of the electrolytic cell.
电化学体系含恒电位仪、工作电极、辅助电极和参比电极,起到控制电位或控制电流的作用。当模板或加工工具被作为系统中的工作电极时,可以导致在模板表面的刻蚀溶液发生相关的电化学反应而生成能刻蚀工件的刻蚀剂.The electrochemical system includes a potentiostat, a working electrode, an auxiliary electrode and a reference electrode, which play the role of controlling the potential or controlling the current. When the template or processing tool is used as the working electrode in the system, it can cause the relevant electrochemical reaction of the etching solution on the surface of the template to generate an etchant that can etch the workpiece.
模板通过可导电的不锈钢固定架,被连接到电化学系统作为工作电极。The template is connected to the electrochemical system as a working electrode through a conductive stainless steel holder.
所说的刻蚀剂的产生方式可以表示为:The production mode of said etchant can be expressed as:
R→O+ne (1)R→O+ne (1)
在这里,模板或加工工具作为阳极。R为刻蚀溶液所列成分中的一种或几种,O为刻蚀剂,n为电子数,e为电子。Here, the template or machining tool acts as the anode. R is one or more of the components listed in the etching solution, O is an etchant, n is the number of electrons, and e is an electron.
所说的刻蚀剂的产生方式也可以通过光电化学产生:Said etchant can also be generated photoelectrochemically:
R(+hv)→O+ne (2)R(+hv)→O+ne (2)
所说的清除剂(或称捕捉剂)可以是SnCl2、对苯二酚、KHB和NaOH之中的一种或几种的组合。清除剂(或称捕捉剂)其对刻蚀剂O的清除反应可以表示为:The scavenger (or capture agent) may be one or a combination of SnCl 2 , hydroquinone, KHB and NaOH. The removal reaction of the scavenger (or capture agent) to the etchant O can be expressed as:
O+S→R+Y (3)O+S→R+Y (3)
这里,S为清除剂,也称为捕捉剂,Y为反应产物,S、R和Y均无刻蚀作用。Here, S is a scavenger, also known as a capture agent, Y is a reaction product, and S, R and Y have no etching effect.
对刻蚀剂O的清除反应也可以通过O自身的分解去活化反应来完成:The scavenging reaction of etchant O can also be completed by the decomposition and deactivation reaction of O itself:
O→Y (4)O→Y (4)
这里,Y为反应产物。Here, Y is the reaction product.
所说的约束刻蚀剂层由于存在清除剂(或称捕捉剂)对刻蚀剂的清除作用,刻蚀剂的寿命缩短而只能扩散很短距离,所以只能在模板表面形成极薄的刻蚀剂层,称之为约束刻蚀剂层,一般厚度为纳米级或微米级,具体厚度取决于清除反应的速度常数。此约束刻蚀剂层的包络面以极高的分辨率保持了模板的复杂三维立体图形。The so-called constrained etchant layer is due to the removal of the etchant by the scavenger (or capture agent), the life of the etchant is shortened and it can only diffuse for a short distance, so it can only form an extremely thin layer on the surface of the template. The etchant layer, called the constrained etchant layer, generally has a thickness of nanometer or micrometer, and the specific thickness depends on the rate constant of the removal reaction. The enveloping surface of this constrained etchant layer preserves the complex three-dimensional pattern of the template at extremely high resolution.
本发明的创新点和优点是:1)可进行各种复杂三维微结构(如半球面、锥面等)的批量复制加工;2)一步完成批量微结构的刻蚀加工,省去了光刻工艺中的涂胶、曝光、显影和最后去胶的复杂工艺,不需用多步套刻工艺来加工复杂三维微结构,大大降低了成本,提高了加工精度和表面平整度;3)加工过程具有距离敏感性,可以通过精确控制模板的进给距离来精确控制加工量,而不是依赖估计刻蚀时间和刻蚀速度来控制加工量。如果以控制刻蚀时间和刻蚀速度来控制加工量,必须控制影响刻蚀反应速度的一切因素。但是以控制距离来控制加工量,你只要控制模板进给距离就够了,属于单参数控制。现在的压电陶瓷能够将单步位移精确控制到纳米级,因此可以获得我们需要的加工尺寸和精度;4)对被加工材料的原始表面平整度要求不高,加工表面的最终取决于模板或加工工具的表面精度,但模板无须和被加工材料接触;5)可选用不同的“刻蚀-约束”体系来加工不同的材料,包括金属和非金属材料,导体和非导体材料;6)没有高能束加工那样对加工面邻近区域会造成破坏或改性的危险。The innovations and advantages of the present invention are: 1) batch replication processing of various complex three-dimensional microstructures (such as hemispherical surfaces, conical surfaces, etc.); The complex process of gluing, exposure, development and final degumming in the process does not require a multi-step overlay process to process complex three-dimensional microstructures, which greatly reduces costs and improves processing accuracy and surface smoothness; 3) Processing process With distance sensitivity, the processing amount can be precisely controlled by precisely controlling the feeding distance of the template, instead of relying on the estimated etching time and etching speed to control the processing amount. If the amount of processing is controlled by controlling the etching time and etching speed, all factors affecting the etching reaction speed must be controlled. But to control the processing amount by controlling the distance, you only need to control the feed distance of the template, which belongs to single-parameter control. The current piezoelectric ceramics can precisely control the single-step displacement to the nanometer level, so we can obtain the processing size and precision we need; 4) The original surface flatness of the processed material is not high, and the final processing surface depends on the template or The surface accuracy of the processing tool, but the template does not need to be in contact with the material to be processed; 5) Different "etching-constraint" systems can be selected to process different materials, including metal and non-metal materials, conductors and non-conductor materials; 6) No High energy beam machining can cause damage or modification to the adjacent area of the machined surface.
比较前述的约束刻蚀剂层技术的诸多特性,可以看出,约束刻蚀剂层技术在加工复杂三维结构时,具有独特的优点。Comparing the characteristics of the above-mentioned constrained etchant layer technology, it can be seen that the constrained etchant layer technology has unique advantages in processing complex three-dimensional structures.
(4)附图说明 (4) Description of drawings
图1为本发明的加工装置实施例组成示意图。Fig. 1 is a schematic diagram of the composition of an embodiment of the processing device of the present invention.
图2为本发明的加工装置的驱动装置结构示意图。Fig. 2 is a structural schematic diagram of the driving device of the processing device of the present invention.
图3为本发明的加工工艺过程示意图。Fig. 3 is a schematic diagram of the processing process of the present invention.
(5)具体实施方式 (5) specific implementation
以下实施例将结合图1,2对本发明作进一步的说明。The following embodiments will further illustrate the present invention in conjunction with FIGS. 1 and 2 .
图1给出本发明的加工装置实施例组成示意图。加工工具采用带有高分辨率复杂三维立体图形的模板5,模板5固定于金属固定架4的下部,金属架4可采用两段直径不同的圆柱体,其上部接驱动装置的Z轴(垂直轴)微驱动控制器2,Z轴微驱动控制器2连接信息处理计算机3。电化学系统设有恒电位仪1、辅助电极8、参比电极9、刻蚀溶液10、电解池11等,实际上,模板5也可视为电化学系统的组成部分,模板5通过金属固定架4接到恒电位仪1而成为工作电极。辅助电极8与参比电极9插入刻蚀溶液10中,刻蚀溶液10装入电解池11中。电解池11设于驱动装置的XY轴(水平轴)微驱动控制器7上。被加工材料6置于电解池11中。参见图2,驱动装置包括Z轴微驱动控制器和XY轴微驱动控制器,在图2中,Z轴微驱动控制器的Z轴大行程运动工作台21与用于模板Z轴进给的微定位工作台22连接,悬臂梁23的两端分别连接微定位工作台22和模板固定架4,模板5固定于固定架4的下端。XY轴微驱动控制器的XY平面运动工作台71设于底座72上。Fig. 1 shows the composition schematic diagram of the processing device embodiment of the present invention. The processing tool adopts a
本发明的基本原理是:在电解液中,通过电化学反应或光化学反应在带有复杂三维微结构的模板(或微加工工具)表面产生刻蚀剂O,例如:The basic principle of the present invention is: in the electrolyte, etchant O is produced on the surface of the template (or microprocessing tool) with complex three-dimensional microstructure by electrochemical reaction or photochemical reaction, for example:
1.电化学方式(模板或加工工具为阳极):见式(1)。1. Electrochemical method (template or processing tool is anode): see formula (1).
2.光电化学方式:见式(2),式中R为刻蚀剂O的还原态。2. Photoelectrochemical method: see formula (2), where R is the reduced state of the etchant O.
由于在电解液中加入了能还原刻蚀剂O而使其失去刻蚀活性的化学试剂(称为捕捉剂),通过这样的均相捕捉反应便使得刻蚀剂O的寿命大大缩短,从而无法由模板向外扩散得较远,因此刻蚀剂层的厚度被约束(或称压缩)在紧贴模板或加工工具处的很小的范围内(微米或纳米级)。也可以通过分解去活化反应来约束刻蚀剂O扩散层的厚度,如:Due to the addition of a chemical reagent (called a capture agent) that can reduce the etchant O to the electrolyte and make it lose its etching activity, the lifetime of the etchant O is greatly shortened through such a homogeneous capture reaction, so that it cannot The template diffuses farther away, so the thickness of the etchant layer is constrained (or compressed) within a small range (micron or nanometer) close to the template or processing tool. It is also possible to constrain the thickness of the etchant O diffusion layer by decomposing deactivation reactions, such as:
1.均相捕捉反应:见式(3)。1. Homogeneous capture reaction: see formula (3).
2.分解或去活化反应:见式(4)。式中S为约束剂,也称为捕捉剂。Y为反应产物。对于上述两类反应,约束刻蚀剂层的厚度μ约为:2. Decomposition or deactivation reaction: see formula (4). In the formula, S is a binding agent, also known as a capture agent. Y is the reaction product. For the above two types of reactions, the thickness μ of the constrained etchant layer is approximately:
μ=(D/Ks)1/2 (5)μ=(D/K s ) 1/2 (5)
其中D为刻蚀剂在液相中的扩散系数,KS为约束反应的准一级反应速率常数。where D is the diffusion coefficient of the etchant in the liquid phase, and KS is the pseudo-first-order reaction rate constant of the bound reaction.
我们可以用上述带有微米或纳米级厚度刻蚀剂层的模板或加工工具5对基体M的刻蚀加工(如图3所示)。让模板或加工工具逐步逼近基体材料表面,当模板或加工工具上的刻蚀剂层接触到基体材料,便开始对基体进行刻蚀,如图3b所示(刻蚀前如图3a所示):We can use the above-mentioned template or
O+M→R+P (6)O+M→R+P (6)
这里,M为基体材料,R为刻蚀剂O的还原态,P为其它反应产物。Here, M is the matrix material, R is the reduced state of the etchant O, and P is other reaction products.
随着基体不断地被刻蚀,为了保证约束刻蚀剂层能继续接触到基体并刻蚀基体,精密驱动装置需要不断将模板向基体移动。(如图3c所示)。As the substrate is continuously etched, in order to ensure that the constrained etchant layer can continue to contact the substrate and etch the substrate, the precision driving device needs to continuously move the template towards the substrate. (as shown in Figure 3c).
最后,当微结构完全刻蚀完毕,(如图3d所示),模板离开基体表面,(如图3e所示)。Finally, when the microstructure is completely etched (as shown in FIG. 3d ), the template leaves the substrate surface (as shown in FIG. 3e ).
用加工工具加工时,这种方法可加工出任意形状的复杂三维微结构,用模板加工时,这种方法可加工出与模板互补的复杂三维微结构,加工精度在纳米级。When processing with processing tools, this method can process complex three-dimensional microstructures of arbitrary shapes. When processing with templates, this method can process complex three-dimensional microstructures complementary to templates, and the processing accuracy is at the nanometer level.
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| CN100564241C (en) * | 2007-01-30 | 2009-12-02 | 厦门大学 | GaAs micro/nono optical element preparation method |
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| CN102766892B (en) * | 2012-08-10 | 2015-04-29 | 中国科学院重庆绿色智能技术研究院 | Micro-nano processing method and device |
| CN103145092B (en) * | 2013-02-28 | 2015-08-12 | 中国科学院半导体研究所 | Nanolithographic seal and utilize it to carry out the method for nanolithographic |
| CN103342334B (en) * | 2013-05-10 | 2016-01-20 | 厦门大学 | A kind of method of electrochemical etching processing of polymer materials surface |
| CN103325674B (en) * | 2013-05-23 | 2015-09-09 | 厦门大学 | A kind of constraint lithography method of complex three-dimensional multi-stage micro-nano structure |
| CN103322938B (en) * | 2013-06-15 | 2016-08-24 | 厦门大学 | A kind of optical element fixed point etching and observation device |
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| CN107385504B (en) * | 2017-06-30 | 2019-03-19 | 哈尔滨工业大学 | Electrochemical Confinement Etching System for Array Electrodes |
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