CN100366785C - Polycrystalline indium tin oxide thin film and method for manufacturing polycrystalline indium tin oxide electrode - Google Patents
Polycrystalline indium tin oxide thin film and method for manufacturing polycrystalline indium tin oxide electrode Download PDFInfo
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- CN100366785C CN100366785C CNB2004100745400A CN200410074540A CN100366785C CN 100366785 C CN100366785 C CN 100366785C CN B2004100745400 A CNB2004100745400 A CN B2004100745400A CN 200410074540 A CN200410074540 A CN 200410074540A CN 100366785 C CN100366785 C CN 100366785C
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- tin oxide
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- amorphous
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000010409 thin film Substances 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 24
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 73
- 229910003437 indium oxide Inorganic materials 0.000 claims description 73
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 73
- 229910001887 tin oxide Inorganic materials 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 39
- 239000012528 membrane Substances 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 21
- 150000002500 ions Chemical class 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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Abstract
A method for manufacturing a polycrystalline indium tin oxide film comprises the steps of forming an amorphous indium tin oxide film on a substrate, and performing rapid thermal annealing treatment to convert the amorphous indium tin oxide film into the polycrystalline indium tin oxide film. In addition, the invention also provides a manufacturing method of the polycrystalline indium tin oxide electrode, firstly, an amorphous indium tin oxide film is formed on the thin film transistor array substrate. Then, a wiring pattern is made on the amorphous indium tin oxide film to form a plurality of amorphous indium tin oxide electrodes on the substrate. And then, carrying out rapid thermal annealing treatment to convert the amorphous indium tin oxide electrodes into polycrystalline indium tin oxide electrodes. The above-mentioned manufacturing method can form a polycrystalline indium tin oxide film with better flatness, and can shorten the processing time and increase the yield.
Description
Technical field
The present invention relates to the manufacture method of a kind of indium and tin oxide film and transparency electrode, and particularly relate to the manufacture method of a kind of polymorphic indium tin oxide thin-membrane and polymorphic indium tin oxide electrode.
Background technology
The communication interface of indicating meter behaviour and information is the trend of development at present with the flat-panel screens.Flat-panel screens mainly contains following several: display of organic electroluminescence, plasma display, liquid-crystal display and photodiode etc.The indium tin oxide transparent conductive film is played the part of important role in above-mentioned indicating meter, indium and tin oxide film is not only splendid transparent electrode material, also has the purposes of differences such as heating, heat reflection, electromagnetic wave shielding and anti-electrostatic simultaneously.So indium and tin oxide film can be widely used in the display device of different kenels such as thin film transistor (TFT) array, colored filter, photodiode, organic electroluminescent device or plasma display.
Yet the roughness on indium and tin oxide film surface will have influence on the stability of element significantly.With the display of organic electroluminescence is example, if the indium and tin oxide film surfaceness is bigger, its cathode layer (if indium tin oxide is an anode) easily contacts with the high spot of indium and tin oxide film electrode, this will make the internal field of electrode surface uprise, thereby cause big electric current by this regional area.When big electric current passed through this regional area, the temperature of this regional area will raise, and just can cause fusion of this regional area thereby the destruction of causing organic electroluminescent device at last.
Therefore, have preferable film characteristics (for example surface flatness, resistance value) in order to make indium tin oxide, known technology can be added annealing operation one usually after film completes.Known annealing technology is to use baking oven or hot-plate that the amorphous indium and tin oxide film is annealed to convert polymorphic indium tin oxide thin-membrane to, but heat up, be incubated (200 ℃) and the De Time Inter that lowers the temperature again oversize (treatment time reaches Shuo Xiao Time usually) herein in the reason, therefore will be unfavorable for the raising of yield rate.
Another kind of known annealing way is to utilize ultraviolet irradiation to convert the indium and tin oxide film of amorphous to polymorphic indium tin oxide thin-membrane, because the ultraviolet energy that is adopted is lower, therefore after uviolizing is intact, still need to use baking oven to make indium and tin oxide film carry out after annealing.Generally speaking, the annealed time can't shorten.
For the above-mentioned annealing time of effective shortening, U.S. Pat 6,448,158 have proposed a kind of patterning process of indium and tin oxide film.In U.S. Pat 6,448, in 158, it mainly is to utilize excite state molecular laser annealing method to convert the indium and tin oxide film of amorphous to polymorphic indium tin oxide thin-membrane.Yet because the narrow and small restriction of the irradiated area of laser beam own, if when being used in large-area annealing, the uniformity coefficient of the film that is formed still is not easy to control.In addition, expensive laser annealing apparatus also makes the cost of making improve, and will reduce manufacturer's competitive power.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of manufacture method of indium and tin oxide film, it is suitable for making the polymorphic indium tin oxide thin-membrane with preferable film characteristics, and can shorten the treatment time and reduce cost.
Another object of the present invention provides a kind of manufacture method of indium-tin oxide electrode, and it is suitable for making the high polymorphic indium tin oxide electrode of stability, and can shorten the treatment time and reduce cost.
The present invention proposes a kind of manufacture method of polymorphic indium tin oxide thin-membrane.At first, on base material, form the amorphous indium and tin oxide film, then carry out quick thermal annealing process, so that the amorphous indium and tin oxide film is converted to polymorphic indium tin oxide thin-membrane.
In one of the present invention preferred embodiment, the formation method of amorphous indium and tin oxide film for example is sputter or other thin film-forming method (physical vapor deposition, chemical vapour deposition etc.).The thickness of the amorphous indium and tin oxide film that in addition, present embodiment formed for example is between 400 dusts～1,500 dust.Above-mentioned quick thermal annealing process for example lies under 400 ℃～700 ℃ the condition carried out 0.5 minute～6 minutes.
The present invention proposes a kind of manufacture method of polymorphic indium tin oxide electrode, is suitable for making the transparency electrode in thin film transistor (TFT) array, colored filter, photodiode, organic electroluminescent device or the plasma display.The manufacture method of this polymorphic indium tin oxide electrode at first, forms the amorphous indium and tin oxide film on base material.Then, patterning case on this amorphous indium and tin oxide film is to form a plurality of amorphous indium-tin oxide electrodes on base material.Afterwards, carry out quick thermal annealing process, so that a plurality of amorphous indium-tin oxide electrodes are converted to a plurality of polymorphic indium tin oxide electrodes.
In one of the present invention preferred embodiment, the formation method of polymorphic indium tin oxide electrode for example is sputter or other thin film-forming method (physical vapor deposition, chemical vapour deposition etc.).The thickness of the amorphous indium and tin oxide film that in addition, present embodiment formed for example is between 400 dusts～1,500 dust.Above-mentioned quick thermal annealing process for example lies under 400 ℃～700 ℃ the condition carried out 0.5 minute～6 minutes.
In one of the present invention preferred embodiment, the patterning case for example comprises the following steps on the amorphous indium and tin oxide film.At first, be formed with the photoresist layer of wiring pattern on the amorphous indium and tin oxide film.Then, with this photoresist layer of wiring pattern being arranged is mask, remove part amorphous indium and tin oxide film, above-mentioned amorphous indium and tin oxide film for example is to remove with oxalic acid or other etching solution, to form a plurality of amorphous indium-tin oxide electrodes on base material.Afterwards, divest the photoresist layer of wiring pattern.
In the preferred embodiment one of of the present invention, above-mentioned base material comprises glass baseplate, silicon substrate or plastic rubber substrate.
In the preferred embodiment one of of the present invention, above-mentioned base material comprises hard substrate or soft base material.
The present invention is because of adopting the rapid thermal annealing method, therefore can convert the amorphous indium and tin oxide film to polymorphic indium tin oxide thin-membrane apace, except shortening the treatment time to promote the yield rate, produced polymorphic indium tin oxide thin-membrane also has preferable film characteristics (for example surface flatness, resistance value).
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and cooperate appended accompanying drawing, be described in detail below.
Description of drawings
Fig. 1 is the manufacture method schematic flow sheet of a kind of polymorphic indium tin oxide thin-membrane in the preferred embodiment of the present invention.
Fig. 2 A is to the flow process diagrammatic cross-section of Fig. 2 D for a kind of polymorphic indium tin oxide thin-membrane manufacture method in the preferred embodiment of the present invention.
Fig. 3 is the manufacture method of a kind of polymorphic indium tin oxide electrode in the preferred embodiment of the present invention.
Fig. 4 A is to the manufacturing process sectional view of Fig. 4 H for a kind of polymorphic indium tin oxide electrode in the preferred embodiment of the present invention.
Fig. 5 A is that indium-tin oxide electrode is applied to the synoptic diagram in the various indicating meters to Fig. 5 E.
The main element nomenclature
100,110,120,130,140: step
210: base material
220: the amorphous indium and tin oxide film
230: target ion
240: quick thermal annealing process
250: polymorphic indium tin oxide thin-membrane
300,310,320,330,340,350,360,370,380: step
410: base material
420: the amorphous indium and tin oxide film
430: target ion
450: photoresist layer
460: the photoresist layer that wiring pattern is arranged
470: the amorphous indium-tin oxide electrode
480: quick thermal annealing process
490: the polymorphic indium tin oxide electrode
500: substrate
510: anode
520: organic luminous layer
530: negative electrode
600: substrate
610: light shield layer
620: colored filter film
630: protective layer
640: shared electrode
700: thin film transistor
710: pixel electrode
720: data wiring
730: scan wiring
800: prebasal plate
810: metacoxa
812: the next door
814: address electrode
900: substrate
910: negative electrode
The 920:n type semiconductor layer
930: the luminous zone
The 940:p type semiconductor layer
950: anode
The X:X electrode
The Y:Y electrode
Embodiment
Fig. 1 is the manufacture method schematic flow sheet of a kind of polymorphic indium tin oxide thin-membrane in the preferred embodiment of the present invention, and Fig. 2 A is to the flow process diagrammatic cross-section of Fig. 2 D for a kind of polymorphic indium tin oxide thin-membrane manufacture method in the preferred embodiment of the present invention.
Shown in Fig. 1 and Fig. 2 A, at first provide base material 210 (step 100), and before making indium tin oxide film, the action (step 110) of cleaning base material 210 earlier is to remove pollutent or the particulate on the base material 210.In the present embodiment, base material 210 for example is glass baseplate, silicon substrate, plastic rubber substrate, or other hard substrate or soft base material.
Then, shown in Fig. 1 and Fig. 2 B, on base material 210, form amorphous indium and tin oxide film 220 (steps 120).The method of above-mentioned formation amorphous indium and tin oxide film for example is physical vaporous deposition or chemical Vapor deposition process.In one of the present invention embodiment, the formation method of amorphous indium and tin oxide film 220 for example is a sputter, it uses the target of indium tin oxide to form target ion 230, and handle via sputter target ion 230 is deposited on the base material 210 to form amorphous indium and tin oxide film 220, and the thickness of the amorphous indium and tin oxide film 220 of formation is for example between 400 dusts～1,500 dust.In a preferred embodiment, the thickness of the amorphous indium and tin oxide film 220 of formation for example is 500 dusts.
Shown in Fig. 1 and Fig. 2 C, carry out quick thermal annealing process 240, make it convert polymorphic indium tin oxide thin-membrane 250 (step 130) to heating amorphous indium and tin oxide film 220.Because resistance value, crystalline network, surfaceness or the lattice internal stress of amorphous indium and tin oxide film 220 are all optimized, therefore must annealed again step, make it convert polymorphic indium tin oxide thin-membrane 250 to.The quick thermal annealing process that present embodiment adopted can be at short notice with the temperature increase of reaction chamber to temperature of reaction, after reaction is finished again original temperature can be fallen back apace.In an embodiment of the present invention, be formed at the amorphous indium and tin oxide film 220 on the base material 210, it after carrying out 0.5 minute～6 minutes reaction under 400 ℃～700 ℃ the condition, promptly is convertible into polymorphic indium tin oxide thin-membrane 250 via quick thermal annealing process.In another preferred embodiment, quick thermal annealing process is for example carried out 1 minute reaction under 600 ℃ condition, can obtain the good polymorphic indium tin oxide thin-membrane of film characteristics 250.
Fig. 3 is the manufacture method schematic flow sheet of a kind of polymorphic indium tin oxide electrode in the preferred embodiment of the present invention.Fig. 4 A is to the manufacturing process sectional view of Fig. 4 H for a kind of polymorphic indium tin oxide electrode in the preferred embodiment of the present invention.
Shown in Fig. 3 and Fig. 4 A, at first, provide base material 410 (step 300), and carry out the making of indium and tin oxide film thereon, in the present embodiment, base material 210 for example is glass baseplate, silicon substrate, plastic rubber substrate, or other hard substrate or soft base material.Before making indium and tin oxide film, can carry out the action (step 310) of base material 410 cleanings earlier, to remove pollutent or the particulate on the base material 410.Then, shown in Fig. 3 and Fig. 4 B, on base material 410, form amorphous indium and tin oxide film 420 (steps 320).In the present embodiment, the method that forms amorphous indium and tin oxide film 420 for example is physical vapor deposition or chemical vapour deposition.In a preferred embodiment, forming amorphous indium and tin oxide film 420 for example is sputter, it uses the target of indium tin oxide to form target ion 430, and handle via sputter target ion 430 is deposited on the base material 410 to form amorphous indium and tin oxide film 420, and the thickness of the amorphous indium and tin oxide film 420 of formation system is between 400 dusts～1,500 dust.In a preferred embodiment, the thickness of the amorphous indium and tin oxide film 420 of formation for example is 500 dusts.
Next, patterning case on this amorphous indium and tin oxide film 420 is to form a plurality of amorphous indium-tin oxide electrodes 470 on base material 410.
Shown in Fig. 3 and Fig. 4 C, be coated with photoresist layer 450 on amorphous indium and tin oxide film 420, and with these photoresist layer 450 exposures (step 330).Then, shown in Fig. 3 and Fig. 4 D, photoresist layer 450 is developed, and the photoresist layer 460 (step 340) of patterning case to be formed with wiring pattern.Then, shown in Fig. 3 and Fig. 4 E, be mask with the photoresist layer 460 that wiring pattern is arranged, remove part amorphous indium and tin oxide film 420, on base material 410, to form a plurality of amorphous indium-tin oxide electrodes 470 (step 350).In a preferred embodiment, for example use oxalic acid to carry out Wet-type etching to remove the amorphous indium and tin oxide film 420 of part, also can use other to have the etching solution of etch effect for amorphous indium and tin oxide film 420 certainly.Afterwards, shown in Fig. 3 and Fig. 4 F, divest the photoresist layer 460 of wiring pattern, to stay amorphous indium-tin oxide electrode 470 on base material 410 (step 360).
Shown in Fig. 3 and Fig. 4 G, carry out a plurality of amorphous indium-tin oxide electrodes 470 of rapid thermal annealing place 480 heating, so that it is converted to a plurality of polymorphic indium tin oxide electrodes 490 (step 370).In one embodiment, quick thermal annealing process can convert amorphous indium-tin oxide electrode 470 to polymorphic indium tin oxide electrode 490 after lying in and carrying out 0.5 minute～6 minutes under 400 ℃～700 ℃ the condition.In a preferred embodiment, quick thermal annealing process is for example carried out 1 minute reaction under 600 ℃ condition, can obtain film characteristics good more than crystalline form indium-tin oxide electrode 490.This polymorphic indium tin oxide electrode 490 will have preferable resistance characteristic, surface flatness, crystalline network and electronic mobility, can make the operation of subsequent element more stable.
Shown in Fig. 3 and Fig. 4 H, polymorphic indium tin oxide electrode 490 can carry out follow-up processing (step 380) again, this transparency electrode is applied to various dissimilar flat-panel screens.
Fig. 5 A is that indium-tin oxide electrode is applied to the synoptic diagram in the various indicating meters to Fig. 5 E.At first please refer to Fig. 5 A, display of organic electroluminescence comprises substrate 500, anode 510, organic luminous layer 520 and negative electrode 530 at least.In this display of organic electroluminescence, anode 510 can adopt the manufacture method of the present invention's indium and tin oxide film to make.
The manufacture method of the present invention's indium and tin oxide film also can be applicable in the general liquid-crystal display, the thin film transistor (TFT) array among the colored filter shown in Fig. 5 B and Fig. 5 C.By Fig. 5 B as can be known, colored filter comprises substrate 600, a plurality of light shield layer 610, a plurality of colored filter film 620, protective layer 630 and common electrode 640 at least.In this colored filter, shared electrode 640 can adopt the manufacture method of the present invention's indium and tin oxide film to make.By Fig. 5 C as can be known, thin film transistor (TFT) array comprises a plurality of thin film transistors 700, pixel electrode 710 at least, data wiring 720 and scan wiring 730, and wherein pixel electrode 710 can adopt the manufacture method of the present invention's indium and tin oxide film to make.
In large-sized indicating meter, be example with the plasma display among Fig. 5 D, for example constituted in the plasma display by prebasal plate 800 and metacoxa 810.Prebasal plate 800 comprises X electrode and Y electrode at least.Metacoxa 810 comprises next door 812 and address electrode 814 at least.Wherein, X electrode and Y electrode can adopt the manufacture method of the present invention's indium and tin oxide film to make.
The application of indium and tin oxide film is also arranged in the light emitting diode indicator.Shown in Fig. 5 E, photodiode comprises substrate 900, negative electrode 910, n type semiconductor layer 920, luminescent layer 930, p type semiconductor layer 940 and anode 950 at least.Wherein, negative electrode 910 and anode 950 promptly can be transparent indium and tin oxide film.This negative electrode 910 and anode 950 can adopt the manufacture method of the present invention's indium and tin oxide film to make.
In sum, the manufacture method of the present invention's polymorphic indium tin oxide thin-membrane and polymorphic indium tin oxide electrode has the following advantages:
(1) the present invention is applied to quick thermal annealing process in the making of indium and tin oxide film, has advantages such as shortening time, the lifting yield rate of handling and reduces cost.
(2) the present invention can make the indium and tin oxide film with good film characteristics, except that the Flatness of film is preferable, utilizes the element of this film making, and its performance characteristic can be more stable.
(3) the present invention makes the method for indium and tin oxide film, can be applicable to the making of film in the various flat-panel screens or electrode.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; the ordinary skill of any technical field that the present invention belongs to; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection domain is as the criterion when looking claims person of defining.
Claims (12)
1. the manufacture method of a polymorphic indium tin oxide thin-membrane is characterized in that comprising the following steps:
On base material, form the amorphous indium and tin oxide film; And
Carry out quick thermal annealing process, so that this amorphous indium and tin oxide film is converted to polymorphic indium tin oxide thin-membrane, wherein this quick thermal annealing process step comprises the following step at least:
Place this base material in reaction chamber;
At short notice with the temperature increase in the reaction chamber to temperature of reaction, wherein this temperature of reaction is between 400 ℃～700 ℃;
Keep this temperature of reaction between 0.5 minute～6 minutes, make this amorphous indium and tin oxide film be converted to polymorphic indium tin oxide thin-membrane; And
After reaction is finished, reduce this temperature of reaction apace to original temperature.
2. according to the manufacture method of the described polymorphic indium tin oxide thin-membrane of claim 1, it is characterized in that the formation method of this amorphous indium and tin oxide film comprises sputter.
3. according to the manufacture method of the described polymorphic indium tin oxide thin-membrane of claim 1, the thickness system that it is characterized in that this amorphous indium and tin oxide film is between 400 dusts～1,500 dust.
4. according to the manufacture method of the described polymorphic indium tin oxide thin-membrane of claim 1, it is characterized in that this base material is selected from one of glass baseplate, silicon substrate and plastic rubber substrate.
5. according to the manufacture method of the described polymorphic indium tin oxide thin-membrane of claim 1, it is characterized in that this base material is selected from one of hard substrate and soft base material.
6. the manufacture method of a polymorphic indium tin oxide electrode, be suitable for making the transparency electrode in thin film transistor (TFT) array, colored filter, photodiode, organic electroluminescent device or the plasma display, it is characterized in that the manufacture method of this polymorphic indium tin oxide electrode comprises the following steps:
On base material, form an amorphous indium and tin oxide film;
In this amorphous indium and tin oxide film patterning case, on this base material, to form most amorphous indium-tin oxide electrodes; And
Carry out quick thermal annealing process, those amorphous indium-tin oxide electrodes are converted to most polymorphic indium tin oxide electrodes, wherein this quick thermal annealing process step comprises the following step at least:
Place this base material in a reaction chamber;
At short notice with the temperature increase in the reaction chamber to temperature of reaction, wherein this temperature of reaction is between 400 ℃～700 ℃;
Keep this temperature of reaction between 0.5 minute～6 minutes, make this amorphous indium and tin oxide film be converted to polymorphic indium tin oxide thin-membrane; And
After reaction is finished, reduce this temperature of reaction apace to original temperature.
According to claim 6 described more than the manufacture method of crystalline form indium-tin oxide electrode, it is characterized in that the formation method of this amorphous indium and tin oxide film comprises sputter.
According to claim 6 described more than the manufacture method of crystalline form indium-tin oxide electrode, the thickness system that it is characterized in that this amorphous indium and tin oxide film is between 400 dusts～1,500 dust.
According to claim 6 described more than the manufacture method of crystalline form indium-tin oxide electrode, it is characterized in that the patterning case comprises the following steps: on this amorphous indium and tin oxide film
The photoresist layer that is formed with wiring pattern is on this amorphous indium and tin oxide film;
With this photoresist layer of wiring pattern being arranged is mask, removes this amorphous indium and tin oxide film of part, to form most amorphous indium-tin oxide electrodes on this base material; And
Divest the photoresist layer that this has wiring pattern.
According to claim 9 described more than the manufacture method of crystalline form indium-tin oxide electrode, it is characterized in that this amorphous indium and tin oxide film system removes with oxalic acid.
11. according to claim 6 described more than the manufacture method of crystalline form indium-tin oxide electrode, it is characterized in that this base material is selected from one of glass baseplate, silicon substrate and plastic rubber substrate.
12. according to claim 7 described more than the manufacture method of crystalline form indium-tin oxide electrode, it is characterized in that this base material is selected from one of hard substrate and soft base material.
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| CN101552241B (en) * | 2008-04-03 | 2010-11-03 | 北京京东方光电科技有限公司 | Array substrate, manufacturing method thereof and liquid crystal display device |
| KR101351419B1 (en) | 2010-11-12 | 2014-01-15 | 엘지디스플레이 주식회사 | Apparatus manufacturing for flat panel display device and mathod for manufacturing the same |
| CN106873238A (en) | 2017-04-28 | 2017-06-20 | 京东方科技集团股份有限公司 | A kind of opposite substrate, display panel, display device and preparation method |
| CN111653687A (en) * | 2020-06-29 | 2020-09-11 | 云谷（固安）科技有限公司 | Array substrate and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6509204B2 (en) * | 2001-01-29 | 2003-01-21 | Xoptix, Inc. | Transparent solar cell and method of fabrication |
| TW557495B (en) * | 2002-05-17 | 2003-10-11 | Helix Technology Inc | Method and device for producing polycrystalline indium tin oxide (ITO) film in a low temperature process |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6509204B2 (en) * | 2001-01-29 | 2003-01-21 | Xoptix, Inc. | Transparent solar cell and method of fabrication |
| TW557495B (en) * | 2002-05-17 | 2003-10-11 | Helix Technology Inc | Method and device for producing polycrystalline indium tin oxide (ITO) film in a low temperature process |
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