CN100347865C - Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light - Google Patents
Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light Download PDFInfo
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- CN100347865C CN100347865C CNB2003101115593A CN200310111559A CN100347865C CN 100347865 C CN100347865 C CN 100347865C CN B2003101115593 A CNB2003101115593 A CN B2003101115593A CN 200310111559 A CN200310111559 A CN 200310111559A CN 100347865 C CN100347865 C CN 100347865C
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Abstract
The present invention discloses a conjoined duplex tube core for a double-table-shaped high-speed photodetector with side face entered light, which relates to a photodetector, particularly to a tube core structure of the photodetector. The tube core is arranged on a semi-insulating semiconductor Inp substrate 1 doped with iron, and a cushioning layer 2, a lower optical waveguide layer 3, a photoabsorption layer 4, a lustering waveguide layer 5, an optical limiting layer 6 and a contact layer 7 orderly grow along the vertical direction through an organic metal chemical vapor deposition technique. An upper and a lower stage-shaped island-shaped parts are formed by an etching technique, wherein the upper stage-shaped part comprises three to seven layers, and a horizon plane is in a semiellipse-rectangle-semiellipse shape. The lower stage shape part is the second layer, and is in a rectangular shape. Finally, a connecting body type tube core is divided into two photodetector tube cores with side face entered light through a cleavage technique. The tube core has the characteristics of simple structure, small size, easy cleavage of a light entering surface, fine adjustment of a core zone area, convenience for assembling and coupling, connection compatibility of coplanar waveguide, etc.
Description
Technical field
The present invention relates to crucial opto-electronic device---the photo-detector in the Optical Receivers in a kind of digital synchronous system (SDH) 40Gb/s long wavelength light communication system; Specifically, the tube core structure that relates to photo-detector.
Background technology
The development trend of optical communication technique is that signal transmission rate is more and more higher, transmission capacity is increasing.In calendar year 2001 U.S. OFC international conference, begun to occur the report of 40Gb/s optical communication system and opto-electronic device, it has represented the highest level of current optical communication technique development.
Critical component is 40Gb/s optical transmission module and 40Gb/s Optical Receivers in the 40Gb/s optical communication equipment.And in the 40Gb/s Optical Receivers, 40Gb/s PIN type photo-detector is essential crucial opto-electronic device.
PIN type photo-detector has many multi-form structures.It comprises: traditional front advance light PIN detector, metal-semiconductor-metal photo-detector, have the front of strengthening in the couples back chamber and enter photo-detector, single file charge carrier detector and side and advance optical waveguide type (WG:Waveguide) PIN detector.Wherein, the side WD-PIN detector that advances light can be divided into several different versions again.
From photoelectric technology index, structural complexity and technology manufacture difficulty, the PIN detector photoresponse speed of light is advanced in traditional front generally can not be greater than 20Gb/s; Metal-semiconductor-metal photo-detector photo-quantum efficiency is on the low side, dark current is bigger than normal, and is not easy to optical fiber and stably is coupled; Have the photo-detector complex structure that the couples back chamber is strengthened, technology is difficult to make; Single file charge carrier detector is very unripe at present.By contrast, it is very fast that the WG-PIN detector development in recent years of light is advanced in the side, can satisfy or reach the requirement of 40Gb/s optical communication system to its photoelectric technology index substantially, and tube core technology made and optical fiber is coupled reaches the engineering requirement easily.
Below, briefly discuss and the PIN photo-detector of light and the WG-PIN detector that light is advanced in the side are advanced in more traditional front.
Concerning ultrahigh speed (40Gb/s) optical signal detector, the technical indicator of two most criticals is photoresponse speed and photo-quantum efficiency.Photoresponse speed depends primarily on the transit time and resistance-capacitance (RC) time of the photo-generated carrier that produces in the light action district.Here, total capacitance C comprises photo-detector PN junction capacitor C j, spuious distributed capacitance Ca and detector equivalence output total capacitance Co, and R is the output equivalent load.According to semiconductor device physics, the transit time of photo-generated carrier and light action district thickness are inversely proportional to; And PN junction capacitor C j is directly proportional with its junction area.Therefore, light action district thickness is narrow more, RC is more little, and then photoresponse speed is more high.Yet concerning the detector of light was advanced in the front, light action district thickness was narrow more, and photo-quantum efficiency is low more.Like this, its photoresponse speed and photo-quantum efficiency improve to be contradiction each other.
The WG-PIN detector that adopts the side to advance light can solve this a pair of contradiction.The photo-detector that advances light with the front is different, and it is almost vertical that the direction of motion of the incident light of photo-detector and photo-generated carrier is advanced in the side.Like this, it is very thin that the optical absorption district can design, and the transit time of photo-generated carrier will be very little; Yet the depth of penetration of incident light is restricted hardly, thereby can improve photo-quantum efficiency.
From existing data of consulting, also do not find with the present invention same or analogous patent at present.Certainly, in international literature data and international conference, the report of some ultra high-speed optical detectors is arranged, these reports all are to study character.As:
(1)JOHN.E.BOWERS，CHARLES A.BURRUS，Ultrawide BandLong-Wavelength p-i-n Photodetectors，Journal ofLightwave Technology，Vol.，LT-5，No.10，1987
(2)T.Ido，Y.Marsoka，K.Kogo，M.Shi shikura et al，Highly EfficientLens-Less Coupling of High-Speed Waveguide Photodiode to SMFand its Application to an Extremely Thin Surface-Mountable10Gbps Receiver Module，OFC 2003/Vol.1/，P66.
(3)M.Achouche，S.Demiguel，E.Derouin，D.Carpentier etal.Performance Evanescent Coupled Waveguide Photodiode withEtched Mirrors for 40Gb/s Optical Receivers，OFC2003/Vol.1/p341.
(4)Yi-Jen Chiu，Siegfried B.Fleischer，John E.Bowers.，High-SpeedLow-Temperature-Grown GaAs p-I-n Traveling-Wave Photodetector，IEEE PhotonicsTechnology Letter，Vol.10，No.7，1998.
The device architecture of introducing in these articles, perhaps complex structure, technology is difficult to realize; Perhaps advance the light face and make, be difficult to obtain the very smooth light face that advances without any introduction; Perhaps be connected incompatible with the microwave co-planar waveguide.And having a common problem to be, how the mesa shaped tube core is connected not introduction or research reliably with external circuit (as co-planar waveguide).
Summary of the invention
The purpose of this invention is to provide a kind of side and advance the Contiuum type dual-die of the double-table shape high speed photodetector of light.
Design philosophy of the present invention is:
1) at first determines the key technical indexes; By Theoretical Calculation, satisfy the key technical indexes requirement from the device architecture design;
2) die design will be considered to be convenient to be connected and assembling with co-planar waveguide, and will consider to be convenient to and optical fiber coupling encapsulation;
3) the device architecture design makes every effort to simple, and according to existing process conditions, technology is made feasible;
4) to take into full account the device reliability requirement.Concerning the bench-type photo-detector of light was advanced in the side, surface passivation protection and prevent electrostatic induction in the dielectric layer was not only the index that develops skill, and is closely related with device reliability.
Technical solution of the present invention comprises three parts:
1) technical indicator analysis and Theoretical Calculation determine to have the tube core structure of certain innovation;
2) epitaxial material structure level and parameter are determined;
3) the outer property bilge construction design drawing of Contiuum type tube core.
Following division is as follows:
1) technical indicator analysis and Theoretical Calculation determine to have the tube core structure of certain innovation
The photo-detector that the 40Gb/s optical communication system is used, its leading indicator are photoresponse speed (that is spectrum width) and optical responsivity.Photoresponse speed can be weighed with light response impulse rise time tr.Concerning the 40Gb/s photo-detector, its photoresponse pulse rise time (tr) should be less than 12.5ps.
According to opto-electronic device physics, influence the principal element of the photo-detector speed of response, be the transit time and the RC time of photo-generated carrier.Here C comprises PN junction electric capacity, stray capacitance and TIA input equivalent capacity, and R is an equivalent load resistance.Improve the speed of response, just need reduce carrier transit time and RC time as far as possible.
Carrier transit time is relevant with light absorption sector width (or thickness).Suppose that charge carrier crosses the light absorption district with the saturated velocity drift, require the transit time less than 6ps, the light absorption sector width just should be less than 0.4 μ m.According to the Distribution Statistics rule of carrier transit time, the light absorption sector width of Que Dinging should be less than 0.65 μ m at last.
The RC time depends mainly on PN junction electric capacity, TIA input equivalent capacity and equivalent load resistance R.Make the RC time less than 7ps, PN junction capacitor C j should be less than 100fP, and R should be less than 50 Ω.
PN junction electric capacity is relevant with the die region area with ' I ' layer thickness in relative dielectric constant, the PIN structure.' I ' layer thickness is big more, and relative dielectric constant and die region area are seized the opportunity more little, and then PN junction electric capacity is more little.
The optical responsivity of photo-detector depends on transmissivity, the optical coupling efficiency of incident light, the absorption coefficient of light, light absorption district thickness and the width of light absorption district material.When carrying out the tube core structure design, mainly consider light absorption district thickness and width.To take into account optical fiber coupling coefficient and photoresponse speed at definite thickness and width.
After taking all factors into consideration, determine the light absorption district, fiber waveguide district gross thickness and width are respectively 0.65 μ m and 1.20 μ m. up and down.
Make and form good incident light for the ease of technology and advance face, we adopt double-table shape dual-die Contiuum type structure when carrying out the tube core structure design.
So-called double-table shape, whole exactly shape tube core is divided into two parts up and down.Top is divided into the table top of (semiellipse-rectangle-semiellipse) shape; Its advantage is: can avoid electric field stress to concentrate, reduce PN junction electric capacity, be convenient to the surface passivation protection.The bottom is divided into the rectangle table top; Its advantage is that bottom electrode technology is made more or less freely, and is convenient to be connected with the microwave co-planar waveguide compatible.
So-called dual-die Contiuum type, the light face that advances of two tube cores connects together exactly, whole two-tube tube core such as same tube core.After Contiuum type tube core technology completes, by cleavage technology, from the centre they be divided into two independently the side advance the singulated dies of light.The advantage of this Contiuum type dual-die design is that advancing the light face is the cleavage minute surface, very smooth; Change the cleavage position, core district area can suitably be adjusted, thereby can suitably adjust photoresponse speed; Be convenient to side evaporation medium anti-reflection film; Structure is comparatively simple, technical maturity.
2) epitaxial material structure level and parameter are determined
The design of the used epitaxial material of the present invention, for mixing on the semi insulating semiconductor InP substrate of iron grown InP/InGaAsP/InGaAs/InGaAsP/InP/InGaAs multilayer epitaxial material successively, its layer of structure, thickness, doping content are as shown in the table.
| Sequence | Form | Respective wavelength (micron) | Thickness (micron) | Doping content (* 10 15/cm 3) | The heterogeneous interface mismatch ratio (* %) |
| 1 | InP (substrate) | 0.92 | 300-360 | Mix the semi-insulator of | |
| 2 | InP | 0.92 | 0.45-0.50 | N type: (8.8-10.0) * 10 3× | |
| 3 | InGaAsP | 1.31 | 0.58-0. 62 | N type: (8.5-9.0) * 10 3 × | ＜0.4 |
| 4 | In 0.53Ga 0.47As | 1.55 | 0.56-0.60 | The n type: (0.5-0.8) * 1 * | ＜0.3 |
| 5 | InGaAsP | 1.31 | 0.45-0.50 | P type: (8.5-9.0) * 10 3× | ＜0.3 |
| 6 | InP | 0.92 | 0.20-0.24 | P type: (8.5-9.0) * 10 3× | ＜0.4 |
| 7 | InGaAs | 1.55 | 0.12-0.15 | P type: (10.0-12.0) * 10 3× | ＜0.4 |
3) structural design
The present invention is a kind of dual-die Contiuum type structure, and design is divided into two parts:
(1) inner hierarchical Design is as above shown in the table;
(2) contour structures design, as shown in drawings.
1. substrate 1 is for mixing the semi insulating semiconductor material InP of iron, and resistivity is 10
7Ω/cm to 10
11Ω/cm;
2. on substrate 1, adopt the mocvd method, one by one grown buffer layer 2, time light waveguide-layer 3, light absorbing zone 4, last light waveguide-layer 5, light limiting layer 6 and contact layer 7;
3. by relevant multiple semiconductor technology, make grown buffer layer 2, down light waveguide-layer 3, light absorbing zone 4, go up light waveguide-layer 5, light limiting layer 6 and contact layer 7 and form upper and lower two the platform shape parts of isolated island shapes; The shape of appearing on the stage partly comprises ducting layer 3, light absorbing zone 4, goes up light waveguide-layer 5, light limiting layer 6 and contact layer 7, and its horizontal plane is the shape of (semiellipse-rectangle-semiellipse); Leave from office shape partly is a resilient coating 2, and its horizontal plane is a rectangular shape;
4. its electrode 8 and co-planar waveguide line compatibility.
5. at last by semiconductor cleavage technology, make it to be divided into 2 independently singulated dies, and can realize the die area fine setting, thereby change photoresponse speed within the specific limits; Promptly, the Contiuum type dual-die is divided into two at last by the way of cleavage;
6. from tube core doping situation, it has ' PIN ' structure, and the intermediate light absorbed layer is near the low doped layer of ' intrinsic ' (i.e. ' I ' layer), and adjacent with it light waveguide-layer up and down is respectively ' P ' type and ' N ' doped region;
7. forming by cleavage owing to advancing the light face, is a kind of desirable physical plane therefore.
The present invention has the following advantages and good effect:
A) advancing the light face is the cleavage minute surface, very smooth; And be convenient to side evaporation medium anti-reflection film;
B) change the cleavage position, core district area can be adjusted easily, thereby can change responsive bandwidth;
C) the half elliptic table top can avoid electric field stress to concentrate, and reduces PN junction electric capacity, is convenient to the surface passivation protection;
D) bottom electrode technology is made and is easier to, and is convenient to be connected with the microwave co-planar waveguide compatible;
E) structure is simpler, and the Contiuum type dual-die separates than being easier to.
Description of drawings
Fig. 1-structural representation of the present invention (stereogram);
Fig. 2-structural representation of the present invention (front view);
Fig. 3-structural representation of the present invention (vertical view).Wherein:
1-substrate, material are semi insulating semiconductor material (InP);
2-resilient coating, material are semi insulating semiconductor material (InP);
Light waveguide-layer under the 3-, material are InGaAsP;
4-light absorbing zone, material are InGaAs;
The last light waveguide-layer of 5-, material are InGaAsP;
6-light limiting layer, material are semi insulating semiconductor material InP;
7-contact layer, material are InGaAs;
The 8-electrode.
Embodiment
The present invention is a kind of die design.The fact shows, according to this design and particular process fabrication method (intending applying for a patent in addition), has made the high speed photodetector tube core that light is advanced in single side.Now embodiment is summarized as follows.
1) selects the InP substrate slice.
2) carry out epitaxial growth.
3) according to the structure chart of design, carry out die making.
Claims (8)
1, the Contiuum type dual-die of the double-table shape high speed photodetector of light is advanced in a kind of side, it is characterized in that:
On semi-insulating InP substrate (1), be followed successively by resilient coating (2), following light waveguide-layer (3), light absorbing zone (4), go up light waveguide-layer (5), light limiting layer (6) and contact layer (7);
This tube core partly is made up of upper and lower two platform shapes; The shape of appearing on the stage partly comprises following light waveguide-layer (3), light absorbing zone (4), goes up light waveguide-layer (5), light limiting layer (6) and contact layer (7), and its horizontal plane is semiellipse-rectangle-half-oval shaped; Leave from office shape partly is resilient coating (2), and its horizontal plane is a rectangular shape;
Its electrode (8) and co-planar waveguide line compatibility;
By the way of cleavage, the Contiuum type dual-die is divided into two at last.
2, advance the Contiuum type dual-die of the double-table shape high speed photodetector of light by the described a kind of side of claim 1, it is characterized in that substrate InP (1): material is the semi insulating semiconductor material InP that mixes iron, and resistivity is 10
7Ω/cm to 10
11Ω/cm, thickness is at the 300-360 micrometer range.
3, advance the Contiuum type dual-die of the double-table shape high speed photodetector of light by the described a kind of side of claim 1, it is characterized in that resilient coating (2): material is InP; Thickness is the 0.45-0.50 micron.
4, advance the Contiuum type dual-die of the double-table shape high speed photodetector of light by the described a kind of side of claim 1, it is characterized in that light waveguide-layer (3) down: material is InGaAsP; Thickness is the 0.58-0.62 micron.
5, advance the Contiuum type dual-die of the double-table shape high speed photodetector of light by the described a kind of side of claim 1, it is characterized in that light absorbing zone (4): material is InGaAs; Thickness is the 0.56-0.60 micron.
6, advance the Contiuum type dual-die of the double-table shape high speed photodetector of light by the described a kind of side of claim 1, it is characterized in that light waveguide-layer (5): material is InGaAsP; Thickness is the 0.45-0.50 micron.
7, advance the Contiuum type dual-die of the double-table shape high speed photodetector of light by the described a kind of side of claim 1, it is characterized in that light limiting layer (6): material is InP; Thickness is the 0.20-0.24 micron.
8, advance the Contiuum type dual-die of the double-table shape high speed photodetector of light by the described a kind of side of claim 1, it is characterized in that contact layer (7): material is InGaAs; Thickness is the 0.12-0.15 micron.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101115593A CN100347865C (en) | 2003-12-11 | 2003-12-11 | Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light |
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|---|---|---|---|
| CNB2003101115593A CN100347865C (en) | 2003-12-11 | 2003-12-11 | Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light |
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| CN100347865C true CN100347865C (en) | 2007-11-07 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1168540A (en) * | 1995-12-21 | 1997-12-24 | 古河电气工业株式会社 | Photodiode with high linearity signal current for light receiving signal |
| US5949120A (en) * | 1996-02-28 | 1999-09-07 | Nippon Telegraph And Telephone Corporation | Semiconductor photodetector |
| US6177710B1 (en) * | 1996-06-13 | 2001-01-23 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
| CN1414642A (en) * | 2002-11-25 | 2003-04-30 | 厦门大学 | InGaAs/InP PIN photo electric detector and its manufacturing technology |
-
2003
- 2003-12-11 CN CNB2003101115593A patent/CN100347865C/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1168540A (en) * | 1995-12-21 | 1997-12-24 | 古河电气工业株式会社 | Photodiode with high linearity signal current for light receiving signal |
| US5949120A (en) * | 1996-02-28 | 1999-09-07 | Nippon Telegraph And Telephone Corporation | Semiconductor photodetector |
| US6177710B1 (en) * | 1996-06-13 | 2001-01-23 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
| CN1414642A (en) * | 2002-11-25 | 2003-04-30 | 厦门大学 | InGaAs/InP PIN photo electric detector and its manufacturing technology |
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