CN109962135B - electroluminescent device - Google Patents
electroluminescent device Download PDFInfo
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- CN109962135B CN109962135B CN201910249929.0A CN201910249929A CN109962135B CN 109962135 B CN109962135 B CN 109962135B CN 201910249929 A CN201910249929 A CN 201910249929A CN 109962135 B CN109962135 B CN 109962135B
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- light
- glass substrate
- electroluminescent device
- conductive layer
- transparent
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- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 230000005426 magnetic field effect Effects 0.000 claims abstract description 6
- 229910000531 Co alloy Inorganic materials 0.000 claims description 6
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 claims description 6
- 230000002708 enhancing effect Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 2
- 238000005401 electroluminescence Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
本发明提供一种应用于底发射型OLED的电致发光器件，包括从上至下依次设置的玻璃基板、缓冲层、透明阴极、发光层和金属阳极，其特征在于，在透明阴极背离发光层的一面形成有磁性导电层。本发明还提供一种应用于顶发射型OLED的电致发光器件，包括从上至下依次设置的金属阴极、发光层和透明阳极，其特征在于，在金属阴极背离发光层的一面形成有磁性导电层。本发明通过磁性导电层产生的磁场效应能够使三线态激子聚集在一起发生碰撞，从而提高EL器件的发光亮度。The invention provides an electroluminescent device applied to a bottom emission OLED, comprising a glass substrate, a buffer layer, a transparent cathode, a light-emitting layer and a metal anode arranged in sequence from top to bottom, characterized in that the transparent cathode is away from the light-emitting layer A magnetic conductive layer is formed on one side. The present invention also provides an electroluminescent device applied to a top-emission OLED, comprising a metal cathode, a light-emitting layer and a transparent anode sequentially arranged from top to bottom, characterized in that a magnetic electrode is formed on the side of the metal cathode away from the light-emitting layer. conductive layer. In the present invention, the magnetic field effect generated by the magnetic conductive layer can make the triplet excitons gather together and collide, thereby improving the luminous brightness of the EL device.
Description
Technical Field
The invention relates to the technical field of electroluminescent devices, in particular to an electroluminescent device.
Background
Electroluminescence (EL) is a physical phenomenon in which an electric field is generated by a voltage applied to two electrodes, electrons excited by the electric field collide with a luminescence center, and transition, change, and recombination of the electrons between energy levels are caused to cause luminescence.
According to the exciton recombination luminescence theory, when electrons (e) and holes (h) are respectively injected from the cathode and the anode of the device and reach the vicinity of the interface of a luminescent region, due to the action of coulomb force, the electrons and the holes are close to each other and bound together to form an electron (e) -hole pair (h), and the electron-hole pair can be converted into two types of excitons: firstly, singlet excitons S ═ ↓ - ↓, which can emit photons are formed, the reason of the process is that the sum of the spin vectors of electrons and holes is zero in charge transfer states CTs (charge transfer orientations: spin is 0) and the singlet excitons S × (↓ - ↓) is zero; the other is that CTT (spin is 1) forms triplet excitons (T +: ↓ ℃), (T0: ↓ + ↓ ℃) and (T-: ↓ ↓ ↓) ], which are three-dimensionally degenerate triplet excitons are split into 3 discrete energy states by an external magnetic field, but the singlet states are not influenced by the magnetic field, and the triplet excitons themselves cannot transition to emit fluorescence because the transition from the triplet state T to the singlet state S (T1 → S1+ hv) is "forbidden". Therefore, how to increase the light emission luminance of the EL device using the triplet excitons becomes a difficult problem.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide an electroluminescent device to solve the problem that triplet excitons cannot increase the emission luminance of the EL device.
The present invention provides an electroluminescent device applied to a bottom emission type OLED, comprising: the light-emitting diode comprises a first glass substrate, a buffer layer, a transparent cathode, a light-emitting layer, a metal anode and a second glass substrate which are sequentially arranged from top to bottom, and is characterized in that a magnetic conducting layer is formed between the transparent cathode and the buffer layer.
In addition, it is preferable that the magnetic conductive layer is a magnetic thin film made of an iron-cobalt alloy material.
The present invention also provides an electroluminescent device applied to a top emission type OLED, comprising: the light-emitting diode comprises a first glass substrate, a metal cathode, a light-emitting layer, a transparent anode and a second glass substrate which are sequentially arranged from top to bottom, and is characterized in that a magnetic conducting layer is formed between the metal cathode and the first glass substrate.
In addition, the magnetic conductive layer is preferably a nanoparticle film made of an iron-cobalt alloy and an aluminum fluoride material.
The electroluminescent device of the invention can achieve the following technical effects:
1. for top emission, the triplet excitons can be gathered together to collide by a magnetic field effect generated by a magnetic conductive layer formed on a metal cathode, so that the luminous brightness of the EL device is improved;
2. for bottom emission, triplet excitons can be gathered together to collide by a magnetic field effect generated by a magnetic conductive layer formed on a transparent cathode, thereby improving the light emission luminance of the EL device.
Drawings
Other objects and results of the present invention will become more apparent and more readily appreciated as the same becomes better understood by reference to the following description taken in conjunction with the accompanying drawings. In the drawings:
fig. 1 is a structural diagram of an electroluminescent device according to a first embodiment of the present invention;
fig. 2 is a structural diagram of an electroluminescent device according to a second embodiment of the present invention.
Wherein the reference numerals include: the metal cathode 1, the light emitting layer 2, the transparent anode 3, the first glass substrate 4, the second glass substrate 5, the magnetic conductive layer 6, the transparent cathode 1 ', the light emitting layer 2 ', the metal anode 3 ', the first glass substrate 4 ', the second glass substrate 5 ', the magnetic conductive layer 6 ' and the buffer layer 7 '.
Detailed Description
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that such embodiment(s) may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing one or more embodiments.
The electroluminescent device provided by the invention is applied to OLED products, the OLED products are divided into two light-emitting structures according to the light-emitting mode, namely top emission and bottom emission, and the invention respectively improves the two light-emitting structures of top emission and bottom emission.
The electroluminescent device provided by the present invention is described in detail below with two embodiments, the first embodiment is a top emission structure, and the second embodiment is a bottom emission structure.
Example one
Fig. 1 shows a structure of an electroluminescent device according to a first embodiment of the present invention.
As shown in fig. 1, an electroluminescent device according to a first embodiment of the present invention includes: the electroluminescent device comprises a first glass substrate 4, a metal cathode 1, a light emitting layer 2, a transparent anode 3 and a second glass substrate 5, wherein a magnetic conducting layer 6 is formed between the metal cathode 1 and the first glass substrate 4, the magnetic conducting layer 6 is a magnetic thin film made of an iron-cobalt alloy material, and is formed on the surface of the metal cathode 1 in a vapor deposition, spin coating or sputtering mode and the like, and is used for gathering triplet excitons together through a magnetic field enhancement effect, increasing mutual collision among the triplet excitons, generating additional excited singlet excitons, and performing relaxation light emission to achieve the purpose of enhancing light emission and improve the light emission brightness of the EL device.
The metal cathode 1, the light-emitting layer 2, the transparent anode 3, the first glass substrate 4, and the second glass substrate 5 are all conventional structures, and therefore, the details thereof are not repeated in the present invention.
Example two
Fig. 2 shows the structure of an electroluminescent device according to a second embodiment of the present invention.
As shown in fig. 2, an electroluminescent device provided in the second embodiment of the present invention includes: the electroluminescent device comprises a first glass substrate 4 ', a buffer layer 7 ', a transparent cathode 1 ', a light emitting layer 2 ', a metal anode 3 ' and a second glass substrate 5 ' which are sequentially arranged from top to bottom, wherein a magnetic conducting layer 6 ' is formed between the transparent cathode 1 ' and the buffer layer 7 ', the magnetic conducting layer 6 ' is a transparent nanoparticle film made of iron-cobalt alloy and aluminum fluoride materials, and the nanoparticle film is formed on the surface of the transparent cathode 1 ' in a vapor deposition, spin coating or sputtering mode and the like and is used for gathering triplet excitons together through enhancing a magnetic field effect, increasing mutual collision among the triplet excitons, generating additional excited singlet excitons and achieving the purpose of enhancing light emission through relaxation light emission, and improving the light emission brightness of the EL device.
The transparent cathode 1 ', the light emitting layer 2 ', the metal anode 3 ', the first glass substrate 4 ', the second glass substrate 5 ', and the buffer layer 7 are all conventional structures, and thus are not described in detail herein.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910249929.0A CN109962135B (en) | 2019-03-29 | 2019-03-29 | electroluminescent device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910249929.0A CN109962135B (en) | 2019-03-29 | 2019-03-29 | electroluminescent device |
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| Publication Number | Publication Date |
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| CN109962135A CN109962135A (en) | 2019-07-02 |
| CN109962135B true CN109962135B (en) | 2021-08-17 |
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| CN201910249929.0A Expired - Fee Related CN109962135B (en) | 2019-03-29 | 2019-03-29 | electroluminescent device |
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| CN (1) | CN109962135B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101023149A (en) * | 2004-09-20 | 2007-08-22 | 伊斯曼柯达公司 | Organic element for electroluminescent devices |
| CN102983280A (en) * | 2011-09-07 | 2013-03-20 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and preparation method thereof |
| KR101647309B1 (en) * | 2015-02-25 | 2016-08-10 | 광주과학기술원 | Organic light emitting diode and method of manufacturing the same |
| CN106057860A (en) * | 2016-08-08 | 2016-10-26 | 深圳市华星光电技术有限公司 | OLED display apparatus and manufacturing method thereof |
| CN109461847A (en) * | 2018-10-31 | 2019-03-12 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode and preparation method thereof, oled device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661995A (en) * | 2009-09-29 | 2010-03-03 | 吉林大学 | Organic electroluminescent device capable of forming spin-polarized injection |
| WO2017031265A1 (en) * | 2015-08-18 | 2017-02-23 | Wake Forest University | Frequency dependent light emitting devices |
| CN107403829A (en) * | 2017-08-07 | 2017-11-28 | 京东方科技集团股份有限公司 | Display unit and preparation method thereof, display panel |
| CN109411616A (en) * | 2018-11-02 | 2019-03-01 | 京东方科技集团股份有限公司 | Display panel and display device |
-
2019
- 2019-03-29 CN CN201910249929.0A patent/CN109962135B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101023149A (en) * | 2004-09-20 | 2007-08-22 | 伊斯曼柯达公司 | Organic element for electroluminescent devices |
| CN102983280A (en) * | 2011-09-07 | 2013-03-20 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and preparation method thereof |
| KR101647309B1 (en) * | 2015-02-25 | 2016-08-10 | 광주과학기술원 | Organic light emitting diode and method of manufacturing the same |
| CN106057860A (en) * | 2016-08-08 | 2016-10-26 | 深圳市华星光电技术有限公司 | OLED display apparatus and manufacturing method thereof |
| CN109461847A (en) * | 2018-10-31 | 2019-03-12 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode and preparation method thereof, oled device |
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| CN109962135A (en) | 2019-07-02 |
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